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Publication numberUS3368125 A
Publication typeGrant
Publication dateFeb 6, 1968
Filing dateAug 25, 1965
Priority dateAug 25, 1965
Publication numberUS 3368125 A, US 3368125A, US-A-3368125, US3368125 A, US3368125A
InventorsEdward F Pasierb
Original AssigneeRca Corp
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Semiconductor gallium arsenide with germanium connecting layer
US 3368125 A
Abstract  available in
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Claims  available in
Description  (OCR text may contain errors)

United States Patent O 3,368,125 SEMICONDUCTOR GALLIUM ARSENIDE WITH GERMANIUM CONNECTING LAYER Edward F. Pasierb, Trenton, NJ., assigner to Radio Corporation of America, a corporation of Delaware Filed Aug. 25, 1965, Ser. No. 482,571

3 Claims. (Cl. 317-237) This invention relates to an improved semiconductor device of the type wherein a polycrystalline layer of semiconductor constitutes an active portion. The device has particular application as a solar cell but it is not limited to such use. This invention also relates to a method of fabricating the above mentioned type of device, in which a low resistance ohmic contact is established between the semiconductive material and a suitable substrate.

There are several presently known types of semiconductive devices for converting solar energy into electrical energy. One oaf these types comprises a conductive substrate, a layer of polycrystalline semiconductive material thereon, land a thin film of conductive material on the semiconductive material. The materials are so chosen that rthe interface between the conductive film and the semiconductor layer is a rectifying barrier. The conductive film is made thin enough to be semi-transparent to sunlight. This type of cell, which is also called a photovoltaic cell, generates electron-hole pairs when light passes through the thin conductive lm and strikes the barrier layer fbetween the conductive lm and the semiconductor. An electrical current ows when the cell is connected in a circuit.

In the above described type of device, it is necessary that there =be a good low resistance ohmic contact between the semiconductor material .and the substrate.

Although there are many different semiconductor materials from which photovoltaic type solar cells can be made, gallium arsenide is one of the preferred materials because of its high sensitivity to the energy in the solar spectrum. Theoretically, then, its maximum attainable efficiency is also high and the amount of output current per unit of cell |area is relatively high.

It is possible to prepare single crystal bodies of gallium arsenide but it has proved to be diicult and expensive to prepare large crystals of the material. It is therefore expensive and di'lcult to make large-area singlecrystal photocells of this semiconductor. On the other hand, it is much easier to deposit polycrystalline layers of gallium arsenide onto suitable substrates and, if polycrystalline material can be successfully used for the cells, large area cells can be made at relatively low cost.

In the past, one of the diicul-ties in the way of producing low cost, large area photocells made of polycrystalline gallium arsenide has (been the difficulty of making a good, low resistance ohmic contact to a suitable metallic substrate while maintaining the desiredl semiconductive properties of the gallium arsenide layer.

One object of the present invention is to provide an improved semiconductor device of the type wherein the semiconductor is a polycrystalline layer of :gallium Iarsenide.

Another object of the invention is to provide a method of fabricating an improved device of the above-described type.

A more specific object off the invention is to provide a device of the above-described type with an improved low resist-ance ohmic 4contact between N-type polycrystalline gallium arsenide and a molybdenum substrate.

Briey, the improved device of the present invention includes a substrate which is preferably a sheet of molybdenum, a layer of tin on the molybdenum substrate, a layer of germanium on the tin layer, a layer of polycrystalline N-type gallium arsenide on the germanium layer, Iand a semi-transparent conducting layer on the gallium arsenide. The tin provides a good, low resistance ohmic contact to the molybdenum substrate. But it can seriously affect the semiconductive properties of the gallium arsenide by diffusion and migration along the grain boundaries of the semiconductor. The layer of germanium inhibits migration of the tin into the gallium larsenide but, alone, itl would not provide a good low resistance ohmic contact between the molybdenum and gallium arsenide. Germanium .also provides a good surface for nucleating the GaAs film and it does not adversely ralfect le properties of the deposited N-type gallium arsenide FIGURE 1 is a cross-section View of a part of a device in accordance with the present invention;

FIGURE 2 is a flow-chart showing various steps in an embodiment of the improved method of making a device of the present invention; and

FIGURE 3 is a partially schematic view of apparatus that may be used in carrying out part of the method of the present invention.

Referring now to FIGURE l, a photovoltaic cell made in accordance with the invention may include a conductive substrate 4 comprising a thin sheet of molybdenum. Molybdenum is a desirable metal to use for this purpose because it has a coeflicient of expansion albout the same as that of gallium arsenide. On the molybdenum substrate is a thin layer yof tin 6. A layer of germanium 8 is superimposed on the tin layer 6. A polycrystalline layer of N-type gallium arsenide 10 is on top of the germanium layer 8 and, finally, a thin semi-transparent layer of platinum 12 is on top of the layer 10 of gallium arsenide. A completed device also includes lead wires (not shown) attached to fthe substrate 4 and the top layer 12.

An example of an embodiment of the method of the present invention will now be given. The principal steps of the method are illustrated in the ow chart of FIG- URE 2. A thin sheet of molybdenum is cleaned with ammonium hydroxide and then dried with alcohol. The next step is the deposition of a layer of tin onto the molybdenum substrate. This may be carried out in a conventional vacuum chamber apparatus. The tin layer may have a thickness of about 200 angstroms but the thickness is not very critical. Thicknesses between about 40 angstroms and about 1500 angstroms have been found to be acceptable.

The next step is to vacuum-evaporate a layer of germanium onto the surface of lthe tin layer. Although the germanium, as deposited in this manner, is usually amorphous, it could just as well be crystalline. The germanium layer may, for example, be between about 40 and 150 angstroms in thickness.

Next, a layer of polycrystalline N-type gallium arsenide is deposited over the germanium. Although, once more, the thickness of the layer is not very critical, it may conveniently have a thickness of about 3 mils. It could be considerably thinner or thicker than this. Greater thicknesses are not necessary.

One form of apparatus that may be used for carrying out the deposition of the layer of gallium arsenide is illustrated in FIGURE 3. 'Ilhis apparatus may include a furnace tube 14 made of quartz, within which is a graphite heater boat 16. The graphite boat is heated by directing the rays from heat lamps (not shown) onto it through the bottom wall of the furnace tube. One end of the furnace tube 14 is connected to a gas inlet line 18. The gas inlet line includes a lbubbler chamber Ztl.

A layer of gallium arsenide is deposited as follows. A source crystal of gallium arsenide 22 is placed in the heater boat 16. Then a piece of molybdenum sheet a 24 on which a layer of tin and a layer of germanium have already been deposited is placed over the top of the boat 16 with the germanium side down. Close spacing, for example 0.02 inch, is maintained between the germanium surface and the gallium arsenide source crystal.

Gallium arsenide is carried from the source crystal to the germanium layer by a vapor transport method. In this case the method is carried out by passing hydrogen gas into the furnace tube 14 from the inlet tube i8 after Ithe hydrogen has first picked up water vapor at C. in the Water bubbler 20. The graphite boat is maintained at a temperature of about 700 C. to about 900 C. and the coated substrate 24 is 1at a somewhat lower temperature. Gallium is transported from the source crystal to the coated substrate as the oxide while the arsenic is transported las the arsenic vapor. The gallium oxide and the arsenic react to produce gallium arsenide which deposits as a polycrystalline layer. Under these conditions the gallium arsenide is deposited as N-type although no doping impurities are intentionally added to the system.

After a suitable thickness of gallium arsenide has been deposited, a semitransparent layer of platinum is deposited on the galliurn arsenide surface. The thickness of this layer may be about 40 angstroms, for example. It too thin a layer is deposited, the resistance of the layer will be too high for eicient operation of the device. The platinum may be deposited by any conventional method such as vacuum evaporation or electroplating.

Although platinum has been given as an example of a suitable metal for the thin, semi-transparent conducting lilm, other metals, such as gold, may rbe used. t

Although the device has thus far been described as a solar cell, it could Aalso be used as a rectifier of alternating current. ln that case the conducting film 12 can be made much thicker since it need not be made thin enough to transmit light.

What is claimed is: 1. A device comprising: a molybdenum substrate; a layer of tin on said substrate forming a low resistance contact therewith; a layer of germanium on said tin layer; a layer of polycrystalline N-type gallium arsemide on said germanium layer; and a layer of conducting material on said gallium arsenide layer making a rectifying contact therewith. 2. A device according to claim 1 in which said layer of conducting material is semi-transparent to sunlight. 3. A device according to claim 2 in which said layer Ozf conducting material is composed of platinum.

References Cited UNTED STATES PATENTS 2,937,324 5/1960 Kroko 317-234 3,049,622 8/1962 Ahlstrom et al. 317-234 X 3,159,462 12/1964 Kadelburg 317-234 3,319,068 5/1967 Beale et al. 317-234 X JAMES D. KALLAM, Primary Examiner.

Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
US2937324 *Feb 5, 1959May 17, 1960Westinghouse Electric CorpSilicon carbide rectifier
US3049622 *Mar 24, 1961Aug 14, 1962Edwin R AhlstromSurface-barrier photocells
US3159462 *Sep 24, 1962Dec 1, 1964Int Rectifier CorpSemiconductor and secured metal base and method of making the same
US3319068 *Aug 14, 1964May 9, 1967Philips CorpOpto-electronic semiconductor junction device
Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US3636919 *Dec 2, 1969Jan 25, 1972Univ Ohio StateApparatus for growing films
US3902920 *Nov 3, 1972Sep 2, 1975Baldwin Co D HPhotovoltaic cell
US4128733 *Dec 27, 1977Dec 5, 1978Hughes Aircraft CompanyMultijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fabricating same
US4213801 *Mar 26, 1979Jul 22, 1980Bell Telephone Laboratories, IncorporatedOhmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers
US4226649 *Sep 11, 1979Oct 7, 1980The United States Of America As Represented By The Secretary Of The NavyGallium arsenide on germanium substrate
US4278830 *Nov 13, 1979Jul 14, 1981NasaArsenic oxide interface
US4321099 *Jan 16, 1981Mar 23, 1982NasaMethod of fabricating Schottky barrier solar cell
US4477688 *Sep 22, 1978Oct 16, 1984The University Of DelawarePhotovoltaic cells employing zinc phosphide
US4596626 *Feb 10, 1983Jun 24, 1986The United States Of America As Represented By The United States National Aeronautics And Space AdministrationDisposing on surface of base a low melting material which is capable of transformation to macrocrystalline or single crystal form, treating to form primary substrate having macrocrystalline or single crystal form
US5356509 *Oct 16, 1992Oct 18, 1994Astropower, Inc.Close-spaced vapor transport depostion of gallium arsenide or indium phosphide
USRE29812 *Apr 14, 1977Oct 24, 1978Photon Power, Inc.Photovoltaic cell
U.S. Classification257/73, 148/DIG.122, 148/DIG.560, 148/DIG.142, 148/DIG.520, 148/DIG.670, 148/DIG.120, 136/262, 148/DIG.250, 257/E31.41, 148/DIG.200, 257/453, 136/258, 257/486
International ClassificationH01L31/07, H01L31/00, C23C16/48, H01L31/0392, H01L21/00, H01L29/00
Cooperative ClassificationY02E10/50, C23C16/481, H01L31/07, Y10S148/02, H01L29/00, Y10S148/025, Y10S148/142, H01L21/00, Y10S148/056, Y10S148/122, H01L31/0392, Y10S148/12, Y10S148/052, Y10S148/067, H01L31/00
European ClassificationH01L29/00, H01L21/00, H01L31/00, C23C16/48B, H01L31/0392, H01L31/07