Design Approaches for Terahertz electronics using Active Device Configurations

By Arsen Turhaner

0.1-1 THz frequency range is of growing interest which enables the applications within ultra-wideband short-range communication, imaging, spectroscopy, and material characterization. In order to obtain high power signal in 0.1-1 THz frequency range, submicronscale Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT) appears as a leading technology.

The purpose of the project is to address the challenges related to the signal generation in the 0.1-1 THz frequency range. The study should investigate circuit techniques based on the non-linear characteristics of the InP HBTs to exhaust the potential for operation near or above the frequency limit (fT - fmax) set by current InP HBT technologies; and exploit advanced concepts such as Gm-boosting, neutralization, stacking, etc.

Expected outcomes of the project are transistor‐based active circuits to obtain highly efficient frequency multiplier chains and sub‐harmonically pumped up‐conversion mixers.

To be completed: 2020


Arsen Turhaner
PhD student
DTU Electrical Engineering
+4545 25 38 71