Explanation: The oxidation process is called thermal oxidation process because high temperature is used to grow the oxide layer. 9. In Crzochralski crystal growth process, the materials are heated up to
A. 950oc
B. 1000 oc
C. 1420oc
D. 1200oc
Answer:C
Explanation: The oxidation process is called thermal oxidation process because high temperature is used to grow the oxide layer. 9. In Crzochralski crystal growth process, the materials are heated up to
A. 950oc B. 1000 oc C. 1420oc D. 1200oc
Explanation: The materials are heated above 1420oc which is greater than the silicon melting point. 10. How to obtain silicon ingots of 10-15cm diameter?