Explanation: In Mutli-emitter transistor n+ emitter is diffused at three places in the p-type base. Thus, it is possible to save chip area and enhance component density of an IC. 12. Which transistor is best suitable to achieve very fast switching in digital circuits?
A. Lateral pnp transistor
B. Schottky transistor
C. Multi-emitter transistor
D. NPN transistor
Answer:A
Explanation: In Mutli-emitter transistor n+ emitter is diffused at three places in the p-type base. Thus, it is possible to save chip area and enhance component density of an IC. 12. Which transistor is best suitable to achieve very fast switching in digital circuits?
A. Lateral pnp transistor B. Schottky transistor C. Multi-emitter transistor D. NPN transistor
Explanation: Fast switching can be achieved, if the transistor is prevented from entering into saturation. In schottky transistor, schottky diode is used to clamp between base and collector. Whenever the base current increases to saturation, the diode conducts. Thus, the base to collector voltage drops to 0.4v (less than VBE(cut-in)=0.5) and the transistor does not enter into saturation . 13. Choose the appropriate value of diode to get a speedy diode from the given values of storage time (n) in sec and forward voltage (V γ).