Explanation: During crystal pulling process, the seed crystal and the crucible rotate in opposite direction, in order to produce ingots of circular cross section (diameter of 10/15cm normally obtained). 11. If the thickness of wafer after all polishing steps in silicon wafer preparation is 23-40 mils. Find its raw cut slice thickness?
A. 16-32 mils
B. 23-40 mils
C. 8-12 mils
D. None of the mentioned
Answer:A
Explanation: During crystal pulling process, the seed crystal and the crucible rotate in opposite direction, in order to produce ingots of circular cross section (diameter of 10/15cm normally obtained). 11. If the thickness of wafer after all polishing steps in silicon wafer preparation is 23-40 mils. Find its raw cut slice thickness?
A. 16-32 mils B. 23-40 mils C. 8-12 mils D. None of the mentioned
Explanation: Usually the silicon wafer obtained has a very rough surface due to slicing operation. So, these wafers undergo a number of polishing steps to produce flat and smooth polished surface. Therefore, the thickness of wafers will be reduced from its raw cut slice. 12. Which process is used to produce small circuits of micron range on silicon wafer?