Explanation: When reverse biased depletion layer increases until the breakdown value is reached. 8. In case of a practical p-n junction diode, the rise in the junction temperature_____
A. decreases the width of the depletion region
B. increases the barrier potential
C. increases the width of the depletion region
D. width of the depletion region increases but the barrier potential remains constant
Answer:A
Explanation: When reverse biased depletion layer increases until the breakdown value is reached. 8. In case of a practical p-n junction diode, the rise in the junction temperature_____
A. decreases the width of the depletion region B. increases the barrier potential C. increases the width of the depletion region D. width of the depletion region increases but the barrier potential remains constant
Explanation: The rise in temperature excites the charges, which go & recombine with the charges in the depletion region decreasing its width. Higher the temperature, lesser is the E.M.F required to turn on the device. 9. In the equilibrium state, the barrier potential across a unbiased silicon diode is ___