Explanation: The controlling parameter is the gate to emitter voltage, as the device is a voltage controlled device. 6. In IGBT, the n– layer above the p+ layer is called as the
A. drift layer
B. injection layer
C. body layer
D. collector Layer
Answer:A
Explanation: The controlling parameter is the gate to emitter voltage, as the device is a voltage controlled device. 6. In IGBT, the n– layer above the p+ layer is called as the
A. drift layer B. injection layer C. body layer D. collector Layer
Explanation: It is called as the drift layer because its thickness determines the voltage blocking capabilities of the device. 7. The voltage blocking capability of the IGBT is determined by the