Explanation: The basic chemical reaction used for epitaxial growth of pure silicon is the hydrogen reduction of silicon tetrachloride. 2. Which component is added to the p-type material in order to get the impurity concentration in epitaxial films?
A. Bi-borane (B2H2)
B. Phosphine (PH3)
C. Boron chloride (BCl3)
D. Phosphorous pentoxide (P2O5)
Answer:A
Explanation: The basic chemical reaction used for epitaxial growth of pure silicon is the hydrogen reduction of silicon tetrachloride. 2. Which component is added to the p-type material in order to get the impurity concentration in epitaxial films?
A. Bi-borane (B2H2) B. Phosphine (PH3) C. Boron chloride (BCl3) D. Phosphorous pentoxide (P2O5)
Explanation: Bi-Borane is used for doping p-type materials and Phosphine is used for doping n-type materials whereas Boron chloride and Phosphorous pentoxide are used for doping during diffusion process. 3. Where are the silicon wafers placed in the reaction chamber for the epitaxial growth process?