Explanation: No isolation island is required in MOSFET structure because, the drain of an n-mos device is held positive with respect to source. This cutoff the drain to substrate diode and the source to substrate diode formed due to p+ region. In BJT, the isolation diffusion occupies extremely large percentage of chip area. 9. Which of the following statement is true?
A. Fabrication of p-mos transistor require few additional steps compared to n-mos transistor
B. Fabrication of n-mos transistor require few additional steps compared to p-mos transistor
C. Fabrication on n-mos is same as that of p-mos transistor
D. Fabrication on n-mos is different from that of p-mos transistor
Answer:A
Explanation: No isolation island is required in MOSFET structure because, the drain of an n-mos device is held positive with respect to source. This cutoff the drain to substrate diode and the source to substrate diode formed due to p+ region. In BJT, the isolation diffusion occupies extremely large percentage of chip area. 9. Which of the following statement is true?
A. Fabrication of p-mos transistor require few additional steps compared to n-mos transistor B. Fabrication of n-mos transistor require few additional steps compared to p-mos transistor C. Fabrication on n-mos is same as that of p-mos transistor D. Fabrication on n-mos is different from that of p-mos transistor
Explanation: There are two additional steps required in the formation of p-mos transistor compared to n-mos transistor. Such as, the formation of n-region and ion implantation of p-type source and drain regions. 10. Find complementary MOSFET from the given circuit diagram?