Explanation: In MOSFET, the threshold voltage is typically 3 to 6v. This large voltage is not compatible with 5v supply used in digital IC. So, to improve device performance, magnitude of threshold voltage should be reduced. 5. A technique used to reduce the magnitude of threshold voltage of MOSFET?
A. Use of complementary MOSFET
B. Use of Silicon nitride
C. Using thin film technology
D. None of the mentioned
Answer:A
Explanation: In MOSFET, the threshold voltage is typically 3 to 6v. This large voltage is not compatible with 5v supply used in digital IC. So, to improve device performance, magnitude of threshold voltage should be reduced. 5. A technique used to reduce the magnitude of threshold voltage of MOSFET?
A. Use of complementary MOSFET B. Use of Silicon nitride C. Using thin film technology D. None of the mentioned
Explanation: Silicon nitride is sandwiched between two SiO2 layer and provide necessary barrier .The dielectric constant of Si3N4 is 7.5, whereas that of SiO2 is 4. This increase in overall dielectric constant reduces threshold voltage. 6. Find the sequence of steps involved in fabrication of poly silicon gate MOSFET?