Explanation: During the p-type base diffusion for npn transistor, two adjacent p-regions are diffused to form the emitter and collector region of the lateral pnp transistor (n-type epitaxial layer is used as base of the pnp transistor).Thus, pnp and npn transistors are fabricated simultaneously. 5. Which of the following transistor has the limitation, due to the requirement of additional fabrication steps and design consideration?
A. Vertical pnp transistor
B. Lateral pnp transistor
C. Triple diffused pnp transistor
D. Substrate pnp transistor
Answer:A
Explanation: During the p-type base diffusion for npn transistor, two adjacent p-regions are diffused to form the emitter and collector region of the lateral pnp transistor (n-type epitaxial layer is used as base of the pnp transistor).Thus, pnp and npn transistors are fabricated simultaneously. 5. Which of the following transistor has the limitation, due to the requirement of additional fabrication steps and design consideration?
A. Vertical pnp transistor B. Lateral pnp transistor C. Triple diffused pnp transistor D. Substrate pnp transistor
Explanation: In triple diffused pnp transistor fabrication process, an extra p-type diffusion is added to a standard npn-transistor after the n-diffusion to obtain a pnp transistor. However, the usefulness of such a structure is not used due to its limitation. 6. The ‘buried layer’ reduces collector series resistance by providing,