Explanation: For oxidation process, silicon wafers are heated to a high temperature and simultaneously they are exposed to a gas containing H2O or O2 or both. 7. At what temperature should the oxidation process be carried out to get an oxide film of thickness 0.02 to 2µm?
A. 0-105oc
B. 950-1115oc
C. 200-850oc
D. 350-900oc
Answer:A
Explanation: For oxidation process, silicon wafers are heated to a high temperature and simultaneously they are exposed to a gas containing H2O or O2 or both. 7. At what temperature should the oxidation process be carried out to get an oxide film of thickness 0.02 to 2µm?
A. 0-105oc B. 950-1115oc C. 200-850oc D. 350-900oc
Explanation: Silicon wafers are raised to a high temperature in the range 950-1115oc and are exposed to gas. The thickness of layer is governed by time, temperature and its moisture content. 8. Oxidation process in silicon planar technology is also called as