Explanation: Large reverse breakdown voltage is desirable whereas others will increases the losses. 2. To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, _____
A. a lightly doped n layer is grown between the two p & n layers
B. a heavily doped n layer is grown between the two p & n layers
C. a lightly doped p layer is grown between the two p & n layers
D. a heavily doped p layer is grown between the two p & n layers
Answer:A
Explanation: Large reverse breakdown voltage is desirable whereas others will increases the losses. 2. To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, _____
A. a lightly doped n layer is grown between the two p & n layers B. a heavily doped n layer is grown between the two p & n layers C. a lightly doped p layer is grown between the two p & n layers D. a heavily doped p layer is grown between the two p & n layers
Explanation: The above process simply the one used to manufacture power diodes. 3. Power diode is _____