Explanation: As the collector contact is present on the top of IC transistor, it makes structural difference. Hence, it increases collector series resistance and VCE(sat) of device. From this, circuit performance is highly improved as matched transistor can be obtained. 3. Name the process that is used to overcome the increase in collector series resistance, which occurs due to the presence of collector contact at the top of integrated transistor.
A. Buried n+ layer
B. Buried p+ layer
C. Triple diffused layer
D. Buried epitaxial layer
Answer:A
Explanation: As the collector contact is present on the top of IC transistor, it makes structural difference. Hence, it increases collector series resistance and VCE(sat) of device. From this, circuit performance is highly improved as matched transistor can be obtained. 3. Name the process that is used to overcome the increase in collector series resistance, which occurs due to the presence of collector contact at the top of integrated transistor.
A. Buried n+ layer B. Buried p+ layer C. Triple diffused layer D. Buried epitaxial layer
Explanation: The value of collector series resistance of an integrated transistor can be easily reduced by a process known as “buried layer” or “Buried n+ layer”. 4. What is the reason for using Lateral pnp transistor in Integrated Circuits?