Explanation: The materials are heated above 1420oc which is greater than the silicon melting point. 10. How to obtain silicon ingots of 10-15cm diameter?
A. By crystal pulling process
B. By crystal melting process
C. By crystal growing process
D. All of the mentioned
Answer:A
Explanation: The materials are heated above 1420oc which is greater than the silicon melting point. 10. How to obtain silicon ingots of 10-15cm diameter?
A. By crystal pulling process B. By crystal melting process C. By crystal growing process D. All of the mentioned
Explanation: During crystal pulling process, the seed crystal and the crucible rotate in opposite direction, in order to produce ingots of circular cross section (diameter of 10/15cm normally obtained). 11. If the thickness of wafer after all polishing steps in silicon wafer preparation is 23-40 mils. Find its raw cut slice thickness?