Explanation: The value of collector series resistance of an integrated transistor can be easily reduced by a process known as “buried layer” or “Buried n+ layer”. 4. What is the reason for using Lateral pnp transistor in Integrated Circuits?
A. Requires simple process control
B. Simultaneous fabrication of pnp and npn transistors.
C. Provide good isolation
D. Miniaturization and cost reduction
Answer:A
Explanation: The value of collector series resistance of an integrated transistor can be easily reduced by a process known as “buried layer” or “Buried n+ layer”. 4. What is the reason for using Lateral pnp transistor in Integrated Circuits?
A. Requires simple process control B. Simultaneous fabrication of pnp and npn transistors. C. Provide good isolation D. Miniaturization and cost reduction
Explanation: During the p-type base diffusion for npn transistor, two adjacent p-regions are diffused to form the emitter and collector region of the lateral pnp transistor (n-type epitaxial layer is used as base of the pnp transistor).Thus, pnp and npn transistors are fabricated simultaneously. 5. Which of the following transistor has the limitation, due to the requirement of additional fabrication steps and design consideration?