Explanation: Generally, n-type impurities have smaller diffusion constant than p-type impurities, the n-type collector moves very little while p-type moves appreciably. Therefore, the diffusion coefficient of the collector impurities should be as small as possible to avoid the movement of the collector junction. 11. The advantage of Multi-emitter transistor is
A. To reduce fabrication steps
B. To save chip area
C. To lower design consideration
D. To provide linear output
Answer:A
Explanation: Generally, n-type impurities have smaller diffusion constant than p-type impurities, the n-type collector moves very little while p-type moves appreciably. Therefore, the diffusion coefficient of the collector impurities should be as small as possible to avoid the movement of the collector junction. 11. The advantage of Multi-emitter transistor is
A. To reduce fabrication steps B. To save chip area C. To lower design consideration D. To provide linear output
Explanation: In Mutli-emitter transistor n+ emitter is diffused at three places in the p-type base. Thus, it is possible to save chip area and enhance component density of an IC. 12. Which transistor is best suitable to achieve very fast switching in digital circuits?