Explanation: Silicon wafers are raised to a high temperature in the range 950-1115oc and are exposed to gas. The thickness of layer is governed by time, temperature and its moisture content. 8. Oxidation process in silicon planar technology is also called as
A. Photo oxidation
B. Silicon oxidation
C. Vapour oxidation
D. Thermal oxidation
Answer:A
Explanation: Silicon wafers are raised to a high temperature in the range 950-1115oc and are exposed to gas. The thickness of layer is governed by time, temperature and its moisture content. 8. Oxidation process in silicon planar technology is also called as
A. Photo oxidation B. Silicon oxidation C. Vapour oxidation D. Thermal oxidation
Explanation: The oxidation process is called thermal oxidation process because high temperature is used to grow the oxide layer. 9. In Crzochralski crystal growth process, the materials are heated up to