Explanation: The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action. 10. The major drawback of the first generation IGBTs was that, they had
A. latch-up problems
B. noise & secondary breakdown problems
C. sluggish operation
D. latch-up & secondary breakdown problems
Answer:A
Explanation: The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action. 10. The major drawback of the first generation IGBTs was that, they had
A. latch-up problems B. noise & secondary breakdown problems C. sluggish operation D. latch-up & secondary breakdown problems
Explanation: The earlier IGBT’s had latch-up problems (device cannot turn off even after the gate signal is removed), and secondary breakdown problems (in which a localized hotspot in the device goes into thermal runaway and burns the device out at high currents). Sanfoundry Global Education & Learning Series – Power Electronics.