Explanation: In conventional metal gate, small overlap capacitance is present, which lowers the speed of operation. Due to self aligning property of poly silicon gate, it eliminates this capacitance. 8. Why MOSFET is preferred over BJT in IC components?
A. MOSFET has low packing density
B. MOSFET has medium packing density
C. MOSFET has high packing density
D. MOSFET has no packing density
Answer:A
Explanation: In conventional metal gate, small overlap capacitance is present, which lowers the speed of operation. Due to self aligning property of poly silicon gate, it eliminates this capacitance. 8. Why MOSFET is preferred over BJT in IC components?
A. MOSFET has low packing density B. MOSFET has medium packing density C. MOSFET has high packing density D. MOSFET has no packing density
Explanation: No isolation island is required in MOSFET structure because, the drain of an n-mos device is held positive with respect to source. This cutoff the drain to substrate diode and the source to substrate diode formed due to p+ region. In BJT, the isolation diffusion occupies extremely large percentage of chip area. 9. Which of the following statement is true?