Explanation: The controlling parameter is the gate to collector current. 9. The structure of the IGBT is a
A. P-N-P structure connected by a MOS gate
B. N-N-P-P structure connected by a MOS gate
C. P-N-P-N structure connected by a MOS gate
D. N-P-N-P structure connected by a MOS gate
Answer:A
Explanation: The controlling parameter is the gate to collector current. 9. The structure of the IGBT is a
A. P-N-P structure connected by a MOS gate B. N-N-P-P structure connected by a MOS gate C. P-N-P-N structure connected by a MOS gate D. N-P-N-P structure connected by a MOS gate
Explanation: The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action. 10. The major drawback of the first generation IGBTs was that, they had