Explanation: Bi-Borane is used for doping p-type materials and Phosphine is used for doping n-type materials whereas Boron chloride and Phosphorous pentoxide are used for doping during diffusion process. 3. Where are the silicon wafers placed in the reaction chamber for the epitaxial growth process?
A. Cup
B. Boats
C. Ingots
D. Crucible
Answer:A
Explanation: Bi-Borane is used for doping p-type materials and Phosphine is used for doping n-type materials whereas Boron chloride and Phosphorous pentoxide are used for doping during diffusion process. 3. Where are the silicon wafers placed in the reaction chamber for the epitaxial growth process?
A. Cup B. Boats C. Ingots D. Crucible
Explanation: The silicon rods are not directly placed in the reaction chamber instead they are placed on a rectangular graphite rod called boats and then it is heated to 1200oc. 4. Which of the following is used to obtain silicon crystal structure while fabricating Integrating Circuits?