A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can defect a signal of wavelength:
A. 4000 nm
B. 6000 nm
C. 4000 Å
D. 6000 Å
Answer:C
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can defect a signal of wavelength:
A. 4000 nm B. 6000 nm C. 4000 Å D. 6000 Å