Explanation: Higher the doping, more the number of charge carrier available to neutralize the opposite charges on the junction. 6. As compared to a p-n junction device of equal rating, the Schottky diode has
A. lower reverse voltage rating
B. lower reverse leakage current
C. higher Switching time
D. higher cut-in voltage
Answer:A
Explanation: Higher the doping, more the number of charge carrier available to neutralize the opposite charges on the junction. 6. As compared to a p-n junction device of equal rating, the Schottky diode has
A. lower reverse voltage rating B. lower reverse leakage current C. higher Switching time D. higher cut-in voltage
Explanation: Low reverse voltage rating is the only drawback against a p-n junction diode. 7. In a Schottky diode, the silicon layer acts as a ____