Explanation: One of the serious disadvantages of thin film capacitor is that it fails, when the voltage rating exceeds due to breakdown of the dielectric, which is a destructive and irreversible failure mechanism and it require over voltage protection. 10. In MOS capacitor, the preference in dielectric layer is given to Silicon Nitride (Si3N4) because
A. It makes capacitor non-polar
B. It contain a small resistance
C. It offers less processing step
D. It reduces failure mechanism
Answer:A
Explanation: One of the serious disadvantages of thin film capacitor is that it fails, when the voltage rating exceeds due to breakdown of the dielectric, which is a destructive and irreversible failure mechanism and it require over voltage protection. 10. In MOS capacitor, the preference in dielectric layer is given to Silicon Nitride (Si3N4) because
A. It makes capacitor non-polar B. It contain a small resistance C. It offers less processing step D. It reduces failure mechanism
Explanation: Si3N4 gives more circuit flexibility by being non-polar, that is , it does not matter which plate is positive or negative and the voltage applied. 11. Why inductor is avoided in Integrated Circuit component?