Explanation: Si3N4 offers higher value of capacitance. Whereas , Al2O3 and Ta2O5 are preferred for large value of capacitance. Hence all of them are used as dielectric layer. 9. Which is considered to be a serious disadvantages of thin film capacitor, when Al2O3is used as dielectric.
A. Additional fabrication step required
B. It require over voltage protection
C. Higher dielectric constant value is required
D. All of the mentioned
Answer:A
Explanation: Si3N4 offers higher value of capacitance. Whereas , Al2O3 and Ta2O5 are preferred for large value of capacitance. Hence all of them are used as dielectric layer. 9. Which is considered to be a serious disadvantages of thin film capacitor, when Al2O3is used as dielectric.
A. Additional fabrication step required B. It require over voltage protection C. Higher dielectric constant value is required D. All of the mentioned
Explanation: One of the serious disadvantages of thin film capacitor is that it fails, when the voltage rating exceeds due to breakdown of the dielectric, which is a destructive and irreversible failure mechanism and it require over voltage protection. 10. In MOS capacitor, the preference in dielectric layer is given to Silicon Nitride (Si3N4) because