Explanation: Elemental form of Phosphorous is not added directly as an impurity in diffusion process. 12. In ion implantation method, penetrating the ions into the silicon wafer depends upon
A. Accelerating voltage
B. Accelerating speed
C. Accelerating current
D. All of the mentioned
Answer:A
Explanation: Elemental form of Phosphorous is not added directly as an impurity in diffusion process. 12. In ion implantation method, penetrating the ions into the silicon wafer depends upon
A. Accelerating voltage B. Accelerating speed C. Accelerating current D. All of the mentioned
Explanation:The depth of penetration of any particular type of ion increases with increasing accelerating voltage. 13. What is the advantage of using Ion implantation process?