Explanation: When the silicon ingots are sliced for the given industrial dimension. It gives a rough surface and thus undergo lapping, polishing and chemical processing steps to get a smooth surface. 10. During ion implantation process (before the ion strike the wafer) the accelerated ions are passed through
A. Strong Electric field
B. Strong Magnetic field
C. Strong Electric and Magnetic Field
D. None of the mentioned
Answer:A
Explanation: When the silicon ingots are sliced for the given industrial dimension. It gives a rough surface and thus undergo lapping, polishing and chemical processing steps to get a smooth surface. 10. During ion implantation process (before the ion strike the wafer) the accelerated ions are passed through
A. Strong Electric field B. Strong Magnetic field C. Strong Electric and Magnetic Field D. None of the mentioned
Explanation: During arc discharge in ion implantation, the unwanted impurities gets generated. The magnetic field acts to separate unwanted impurities from dopant ions. 11. In which method shallow penetration of dopants is possible?