Explanation: The depth of diffusion in this method, can be easily regulated by control of the incident ion velocity and is capable of shallow penetration. 12. Which method is most suitable for silicon crystal growth in silicon wafer preparation?
A. Float zone process
B. Bridgeman-Stockbarger method
C. Czochralski crystal growth process
D. Laser heated pedestal growth
Answer:A
Explanation: The depth of diffusion in this method, can be easily regulated by control of the incident ion velocity and is capable of shallow penetration. 12. Which method is most suitable for silicon crystal growth in silicon wafer preparation?
A. Float zone process B. Bridgeman-Stockbarger method C. Czochralski crystal growth process D. Laser heated pedestal growth
Explanation: Czochralski crystal growth processes obtain single crystal of semiconductor. The most important application of this method may be growth of large cylindrical ingot of single crystal silicon. Sanfoundry Global Education & Learning Series – Linear Integrated Circuit.