Explanation: During arc discharge in ion implantation, the unwanted impurities gets generated. The magnetic field acts to separate unwanted impurities from dopant ions. 11. In which method shallow penetration of dopants is possible?
A. Ion implantation
B. Vertical diffusion
C. Horizontal diffusion
D. Dopants diffusion
Answer:A
Explanation: During arc discharge in ion implantation, the unwanted impurities gets generated. The magnetic field acts to separate unwanted impurities from dopant ions. 11. In which method shallow penetration of dopants is possible?
A. Ion implantation B. Vertical diffusion C. Horizontal diffusion D. Dopants diffusion
Explanation: The depth of diffusion in this method, can be easily regulated by control of the incident ion velocity and is capable of shallow penetration. 12. Which method is most suitable for silicon crystal growth in silicon wafer preparation?