Explanation: In diffusion process, the depth of diffusion of impurities depends upon the time taken for diffusion, which normally extends for more than 2 hours. 11. Which component is not used as an impurity in diffusion process?
A. Phosphorous
B. Boron chloride
C. Phosphorous pentaoxide
D. Boron oxide
Answer:A
Explanation: In diffusion process, the depth of diffusion of impurities depends upon the time taken for diffusion, which normally extends for more than 2 hours. 11. Which component is not used as an impurity in diffusion process?
A. Phosphorous B. Boron chloride C. Phosphorous pentaoxide D. Boron oxide
Explanation: Elemental form of Phosphorous is not added directly as an impurity in diffusion process. 12. In ion implantation method, penetrating the ions into the silicon wafer depends upon