Explanation: IGBT has a p-n-p structure with fingers of n+ layers into the p layer. The p layer has the largest cross section and forms the body of the IGBT. 10. At present, the state-of-the-art semiconductor devices are begin manufactured using
A. Semiconducting Diamond
B. Gallium-Arsenide
C. Germanium
D. Silicon-Carbide
Answer:A
Explanation: IGBT has a p-n-p structure with fingers of n+ layers into the p layer. The p layer has the largest cross section and forms the body of the IGBT. 10. At present, the state-of-the-art semiconductor devices are begin manufactured using
A. Semiconducting Diamond B. Gallium-Arsenide C. Germanium D. Silicon-Carbide
Explanation: All of the above mentioned can be used but Si-Ca has certain advantages over the other materials. Sanfoundry Global Education & Learning Series – Power Electronics.