Explanation: The basic chemical reaction used for epitaxial growth of pure silicon is the hydrogen reduction of silicon tetrachloride. 2. Which component is added to the p-type material in order to get the impurity concentration in epitaxial films?
A. Bi-borane (B2H2)
B. Phosphine (PH3)
C. Boron chloride (BCl3)
D. Phosphorous pentoxide (P2O5)
Answer:A
Explanation: The basic chemical reaction used for epitaxial growth of pure silicon is the hydrogen reduction of silicon tetrachloride. 2. Which component is added to the p-type material in order to get the impurity concentration in epitaxial films?
A. Bi-borane (B2H2) B. Phosphine (PH3) C. Boron chloride (BCl3) D. Phosphorous pentoxide (P2O5)