Explanation: Generally, n-type impurities have smaller diffusion constant than p-type impurities, the n-type collector moves very little while p-type moves appreciably. Therefore, the diffusion coefficient of the collector impurities should be as small as possible to avoid the movement of the collector junction. 11. The advantage of Multi-emitter transistor is
A. To reduce fabrication steps
B. To save chip area
C. To lower design consideration
D. To provide linear output
Answer:A
Explanation: Generally, n-type impurities have smaller diffusion constant than p-type impurities, the n-type collector moves very little while p-type moves appreciably. Therefore, the diffusion coefficient of the collector impurities should be as small as possible to avoid the movement of the collector junction. 11. The advantage of Multi-emitter transistor is
A. To reduce fabrication steps B. To save chip area C. To lower design consideration D. To provide linear output