Explanation: Bi-Borane is used for doping p-type materials and Phosphine is used for doping n-type materials whereas Boron chloride and Phosphorous pentoxide are used for doping during diffusion process. 3. Where are the silicon wafers placed in the reaction chamber for the epitaxial growth process?
A. Cup
B. Boats
C. Ingots
D. Crucible
Answer:A
Explanation: Bi-Borane is used for doping p-type materials and Phosphine is used for doping n-type materials whereas Boron chloride and Phosphorous pentoxide are used for doping during diffusion process. 3. Where are the silicon wafers placed in the reaction chamber for the epitaxial growth process?
A. Cup B. Boats C. Ingots D. Crucible