Explanation: In triple diffused pnp transistor fabrication process, an extra p-type diffusion is added to a standard npn-transistor after the n-diffusion to obtain a pnp transistor. However, the usefulness of such a structure is not used due to its limitation. 6. The ‘buried layer’ reduces collector series resistance by providing,
A. A low resistivity current path from n-type layer to n+ contact layer
B. A low resistivity current path from p-type layer to n+ contact layer
C. A high resistivity current path from n-type layer to n+ contact layer
D. A high resistivity current path from p-type layer to n+ contact layer
Answer:A
Explanation: In triple diffused pnp transistor fabrication process, an extra p-type diffusion is added to a standard npn-transistor after the n-diffusion to obtain a pnp transistor. However, the usefulness of such a structure is not used due to its limitation. 6. The ‘buried layer’ reduces collector series resistance by providing,
A. A low resistivity current path from n-type layer to n+ contact layer B. A low resistivity current path from p-type layer to n+ contact layer C. A high resistivity current path from n-type layer to n+ contact layer D. A high resistivity current path from p-type layer to n+ contact layer