Explanation: During arc discharge in ion implantation, the unwanted impurities gets generated. The magnetic field acts to separate unwanted impurities from dopant ions. 11. In which method shallow penetration of dopants is possible?
A. Ion implantation
B. Vertical diffusion
C. Horizontal diffusion
D. Dopants diffusion
Answer:A
Explanation: During arc discharge in ion implantation, the unwanted impurities gets generated. The magnetic field acts to separate unwanted impurities from dopant ions. 11. In which method shallow penetration of dopants is possible?
A. Ion implantation B. Vertical diffusion C. Horizontal diffusion D. Dopants diffusion