<p><b>一硒化二鎵</b>是一種無機化合物，化學式為Ga<sub>2</sub>Se，它是鎵的硒化物之一。它可在鎵和硒的包晶反應生成。它是立方晶系晶體，a=8.918 Å，Z=10。它是一種半導體，具有層狀結構。</p>
<h2><span id=".E5.8F.82.E8.80.83.E6.96.87.E7.8C.AE"></span><span id="参考文献">參考文獻</span></h2>

<h2><span id=".E6.8B.93.E5.B1.95.E9.98.85.E8.AF.BB"></span><span id="拓展阅读">拓展閱讀</span></h2>
<ul><li><cite class="citation journal">G. A. Gamal, A. T. Nagat, M. M. Nassary, A. M. Abou-Alwafa. Some Physical Properties of Ga2Se Single Crystals. Crystal Research and Technology. 1996, <b>31</b> (3): 359–364 <span> [<span>2021-11-24</span>]</span>. <span title="數位物件識別號">doi:10.1002/crat.2170310315</span>. （原始內容存檔於2021-11-24） <span title="連接到英語網頁">（英語）</span>.</cite><span title="ctx_ver=Z39.88-2004&amp;rfr_id=info%3Asid%2Fzh.wikipedia.org%3A%E4%B8%80%E7%A1%92%E5%8C%96%E4%BA%8C%E9%95%93&amp;rft.atitle=Some+Physical+Properties+of+Ga2Se+Single+Crystals&amp;rft.au=G.+A.+Gamal%2C+A.+T.+Nagat%2C+M.+M.+Nassary%2C+A.+M.+Abou-Alwafa&amp;rft.date=1996&amp;rft.genre=article&amp;rft.issue=3&amp;rft.jtitle=Crystal+Research+and+Technology&amp;rft.pages=359-364&amp;rft.volume=31&amp;rft_id=https%3A%2F%2Fonlinelibrary.wiley.com%2Fdoi%2F10.1002%2Fcrat.2170310315&amp;rft_id=info%3Adoi%2F10.1002%2Fcrat.2170310315&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal"><span> </span></span></li></ul><!-- 
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**一硒化二鎵**是一種無機化合物，化學式為 Ga2Se，它是鎵的硒化物之一。它可在鎵和硒的包晶反應生成。它是立方晶系晶體，a=8.918 Å，Z=10。它是一種半導體，具有層狀結構。

## 參考文獻

## 拓展閱讀

* G. A. Gamal, A. T. Nagat, M. M. Nassary, A. M. Abou-Alwafa. Some Physical Properties of Ga2Se Single Crystals. Crystal Research and Technology. 1996, **31** (3): 359–364 [2021-11-24]. doi:10.1002/crat.2170310315. （原始內容存檔於 2021-11-24） （英語）.
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