Using eGaN FETs is very similar to using modern power MOSFETs. However, due to the significantly better performance, there are additional design and test considerations to make certain devices are used efficiently and reliably. In an effort to make the transition from power MOSFETs to the new generation of power management devices as easy as possible, this paper describes the general operation of enhancement mode GaN devices, gate drive techniques, circuit layout considerations, thermal management techniques, and testing considerations.