FIG. 9. Generation and termination of a couple of triple stacking faults from an antiphase boundary during the 3C-SiC epitaxial growth along the [001] z direction. Under- coordinated atoms taken at different KMC times: (a) SFh3is growth along {111} planes during the epitaxial process: the red arrow highlights the APB that generated the SFh3is, while the blue arrow points to the coming APB, which suppresses the SFh3is; (b) contact between the SFh3is and the APB moving along h110i directions; (c)-(d) two subsequent snapshots showing the growth termination of the SFh3is induced by the APB evolution: orange arrows highlight the contact points between the APB and the SFh3is; and (e)final snapshot with the SFh3is closure. Multimediaview:https://doi.org/10.1063/1.5132300.1