FIG. 2.Evolution of an APD with four APBs along the {110} planes during the 3C- SiC substrate growth along the [001] z direction. Epitaxially grown 3C-SiC sub- strate: (a) atoms at the antiphase boundaries in the bulk; (b) under-coordinated atoms of the input KMC substrate, highlighting the initial xy surface exposed to the deposited gases; (c) under-coordinated atoms taken after the start of the KMC deposition, highlighting the formation of the surface depletion at the APB; and (d) under-coordinated atoms taken at the end of the KMC evolution, highlighting the final xy surface.The dashed and continuous segments highlight, respectively, the {111} Si-face and C-face; the red arrow depicts the APB drift during an epitaxial growth due to the different growth velocity of the exposed {111} Si-face and C-face.