FIG. 13.Generation and bulk growth of a single stacking fault from an antiphase boundary during the 3C-SiC epitaxial growth along the [001] z direction. Under-coordinated atoms taken at different KMC times: (a)formation of two triple SFs from the APB during the epitaxial process; (b)formation of a single SF from the APB aligned to the previous triple SFs; (c)-(e)three subsequent snapshots showing the growth of the SF tetrahedra starting from the single SF in the bulk 3C-SiCcrystal, while thetriple SFs mainly evolve only at the surface of the growing crystal.