It has been suggested that minute incorporation of halogen atoms can alter the electronic properties of SiC; Cl in the SiC lattice was claimed to create three new traps in n-type 4H-SiC epitaxial layers at EC −0.37 eV, EC −1.06 eV, and EC −1.3 eV and one new level in p-type at EV +0.97. 36