Figure 6. Surface morphology of epitaxial SiC layers grown with chlorinated and brominated chemistry. (a) AFM images (20 × 20 μm 2 ) for homoepitaxial layers grown by chlorinated and brominated chemistryatC/Si=0.9andSi/H2 =0.25%, havingRMSvaluesof0.26 and 0.23 nm, respectively. (b) AFM images (20 × 20 μm 2 ) for homoepitaxial layers grown by chlorinated and brominated chemistry Si/H2 = 0.25% and C/Si = 0.7, resulting in a step-bunched surface having RMS values of 3.33 and 3.22 nm, respectively. (c) Optical microscopy images of the SiC epitaxial layer surface grown with HCl and HBr addition with C/Si = 0.9. The thicknesses of the epitaxial layers are around 25 μm.