Significant photoresponse was obtained from experimental InGaN single-junction devices. In addition to controlling the optical properties, which results in band gap engineering, photovoltaic device performance can be improved by engineering the microstructure of the material to increase the optical path length and provide light trapping. Growing nanocolumns on the device can further result in resonant interaction with light, and InGaN nanocolumns have been successfully deposited on using plasma enhanced evaporation. Nanorod growth may also be advantageous in the reduction of treading dislocations which may act as charge traps reducing solar cell efficiency