The emitted wavelength, dependent on the material's band gap, can be controlled by the GaN/InN ratio, from near ultraviolet for 0.02In/0.98Ga through 390 nm for 0.1In/0.9Ga, violet-blue 420 nm for 0.2In/0.8Ga, to blue 440 nm for 0.3In/0.7Ga, to red for higher ratios and also by the thickness of the InGaN layers which are typically in the range of 2–3 nm. However, atomistic simulations results have shown that emission energies have a minor dependence on small variations of device dimensions. Studies based on device simulation have shown that it could be possible to increase InGaN/GaN LED efficiency using band gap engineering, especially for green LEDs.