Compared with other non-volatile random-access memory (NVRAM) technologies, NRAM has several advantages. In flash memory, the common form of NVRAM, each cell resembles a MOSFET transistor with a control gate (CG) modulated by a floating gate (FG) interposed between the CG and the FG. The FG is surrounded by an insulating dielectric, typically an oxide. Since the FG is electrically isolated by the surrounding dielectric, any electrons placed on the FG will be trapped on the FG which screens the CG from the channel of the transistor and modifies the threshold voltage (VT) of the transistor. By writing and controlling the amount of charge placed on the FG, the FG controls the conduction state of the MOSFET flash device depending on the VT of the cell selected. The current flowing through the MOSFET channel is sensed to determine the state of the cell forming a binary code where a 1 state (current flow) when an appropriate CG voltage is applied and a 0 state (no current flow) when the CG voltage is applied.