One method of introducing pores in silicon is through the use of an anodization cell. A possible anodization cell employs platinum cathode and silicon wafer anode immersed in hydrogen fluoride (HF) electrolyte. Recently, inert diamond cathodes are used to avoid metallic impurities in the electrolyte and inert diamond anodes form an improved electrical back plate contact to the silicon wafers. Corrosion of the anode is produced by running electric current through the cell. It is noted that the running of constant DC is usually implemented to ensure steady tip-concentration of HF resulting in a more homogeneous porosity layer although pulsed current is more appropriate for the formation of thick silicon wafers bigger than 50 µm.