Materials from the II–VI compounds, such as HgCdTe, are used for high-performing infrared light-sensing cameras. In 2017, the US Army Research Labs in collaboration with Stony Brook University developed an alternative within the . InAsSb, a III–V compound, is commonly used commercially for opto-electronics in items such as DVDs and cell phones. To counteract this possibility in implementing InAsSb, scientists added a graded layer with increased atomic spacing and an intermediate layer of the substrate GaAs to trap any potential defects. This technology was designed with night-time military operations in mind.