The process of electron penetration through a resist is essentially a stochastic process; there is a finite probability that resist exposure by released electrons can occur quite far from the point of photon absorption. Increasing the dose increases the number of far-reaching electrons, resulting in more extended resist loss. A leading EUV chemically amplified resist exposed to 80 eV electrons at a dose up to 80 uc/cm2 showed up to 7.5 nm resist thickness loss. For an open-source resist exposed near 200 uC/cm2 by 80 eV electrons, the resist thickness lost after post-exposure bake and development was around 13 nm, while doubling the dose resulted in increasing the loss to 15 nm. On the other hand, for doses >500 uC/cm2, the resist begins to thicken due to crosslinking.