The two issues of shot noise and EUV-released electrons point out two constraining factors: 1) keeping dose high enough to reduce shot noise to tolerable levels, but also 2) avoiding too high a dose due to the increased contribution of EUV-released photoelectrons and secondary electrons to the resist exposure process, increasing the edge blur and thereby limiting the resolution. Aside from the resolution impact, higher dose also increases outgassing and limits throughput, and crosslinking occurs at very high dose levels. For chemically amplified resists, higher dose exposure also increases line edge roughness due to acid generator decomposition.