EUV light generates photoelectrons upon absorption by matter. These photoelectrons in turn generate secondary electrons, which slow down before engaging in chemical reactions. At sufficient doses 40 eV electrons are known to penetrate 180 nm thick resist leading to development. At a dose of 160 μC/cm2, corresponding to 15 mJ/cm2 EUV dose assuming one electron/photon, 30 eV electrons removed 7 nm of PMMA resist after standard development. For a higher 30 eV dose of 380 μC/cm2, equivalent to 36 mJ/cm2 at one electron/photon, 10.4 nm of PMMA resist are removed. These indicate the distances the electrons can travel in resist, regardless of direction.