Electrons which diffuse from the cathode into the P-doped layer, or anode, become what are termed "minority carriers" and tend to recombine there with the majority carriers, which are holes, on a timescale characteristic of the material which is the p-type minority carrier lifetime. Similarly, holes diffusing into the N-doped layer become minority carriers and tend to recombine with electrons. In equilibrium, with no applied bias, thermally assisted diffusion of electrons and holes in opposite directions across the depletion layer ensure a zero net current with electrons flowing from cathode to anode and recombining, and holes flowing from anode to cathode across the junction or depletion layer and recombining.