Because turn-ons are caused by internal capacitive currents flowing into the gate as a consequence of a high d"v"/d"t", (i.e., rapid voltage change) a gate resistor or capacitor (or both in parallel) may be connected between the gate and MT1 to provide a low-impedance path to MT1 and further prevent false triggering. This, however, increases the required trigger current or adds latency due to capacitor charging. On the other hand, a resistor between the gate and MT1 helps draw leakage currents out of the device, thus improving the performance of the TRIAC at high temperature, where the maximum allowed d"v"/d"t" is lower. Values of resistors less than 1kΩ and capacitors of 100nF are generally suitable for this purpose, although the fine-tuning should be done on the particular device model.