Electronic devices are usually composed of sequential thin layers made up of oxides, nitrides, silicades, metals, polymers, or doped semiconductor–based media coated on a single crystalline substrate (Si, Ge or AsGa). These structures can be studied by HI-ERDA. This technique has one major advantage over other methods. The profile of impurities can be found in a one-shot measurement at a constant incident energy. Moreover, this technique offers an opportunity to study the density profiles of hydrogen, carbon and oxygen in various materials, as well as the absolute hydrogen, carbon and oxygen content.