One of the most important uses of TCAD tools is to explore new device technology where many exploratory simulations are performed in order to give the device designer a better understanding of possible benefits as well as drawbacks of a given technology. This use case demands sequential simulations with some analysis in between. In order to be useful, many simulation cycles must be run within the time allotted for exploration, putting a high priority on minimization of simulation run time. Currently, full flow standard CMOS simulations are most often accomplished with a combination of 1D and 2D simulation and take less than a few hours on a 2.6 GHz Pentium 4. To perform these simulations in 3D (from gate formation on) would take a minimum of 24 hours for minimum accuracy simulation. Most of the information desired from TCAD simulations can be extracted from the simplification that the device can be treated uniformly in depth (i.e. a 2D simulation). To include the effects device shape along the depth or to investigate implant shadowing, 3D simulations must be performed.