Stable contacts at semiconductor interfaces, with low contact resistance and linear I-V behavior, are critical for the performance and reliability of semiconductor devices, and their preparation and characterization are major efforts in circuit fabrication. Poorly prepared junctions to semiconductors can easily show rectifying behaviour by causing depletion of the semiconductor near the junction, rendering the device useless by blocking the flow of charge between those devices and the external circuitry. Ohmic contacts to semiconductors are typically constructed by depositing thin metal films of a carefully chosen composition, possibly followed by annealing to alter the semiconductor–metal bond.