In 1964, James R. Biard filed a patent for the Schottky transistor. In his patent the Schottky diode prevented the transistor from saturating by minimizing the forward bias on the collector-base transistor junction, thus reducing the minority carrier injection to a negligible amount. The diode could also be integrated on the same die, it had a compact layout, it had no minority carrier charge storage, and it was faster than a conventional junction diode. His patent also showed how the Schottky transistor could be used in DTL circuits and improve the switching speed of other saturated logic designs, such as Schottky-TTL, at a low cost.