The first magnetoresistive effect was discovered in 1856 by William Thomson, better known as Lord Kelvin, but he was unable to lower the electrical resistance of anything by more than 5%. Today, systems including semimetals and concentric ring EMR structures are known. In these, a magnetic field can adjust the resistance by orders of magnitude. Since different mechanisms can alter the resistance, it is useful to separately consider situations where it depends on a magnetic field directly (e.g. geometric magnetoresistance and multiband magnetoresistance) and those where it does so indirectly through magnetization (e.g. AMR and TMR).