To overcome low resolution of the terahertz systems near-field terahertz imaging systems are under development. In nearfield imaging the detector needs to be located very close to the surface of the plane and thus imaging of the thick packaged objects may not be feasible. In another attempt to increase the resolution, laser beams with frequencies higher than terahertz are used to excite the p-n junctions in semiconductor objects, the excited junctions generate terahertz radiation as a result as long as their contacts are unbroken and in this way damaged devices can be detected. In this approach, since the absorption increases exponentially with the frequency, again inspection of the thick packaged semiconductors may not be doable. Consequently, a tradeoff between the achievable resolution and the thickness of the penetration of the beam in the packaging material should be considered.