A. Nakagawa et al. invented the device design concept of non-latch-up IGBTs in 1984. The invention is characterized by the device design setting the device saturation current below the latch-up current, which triggers the parasitic thyristor. This invention realized complete suppression of the parasitic thyristor action, for the first time, because the maximal collector current was limited by the saturation current and never exceeded the latch-up current. After the invention of the device design concept of non-latch-up IGBTs, IGBTs evolved rapidly, and the design of non-latch-up IGBTs became a de facto standard and the patent of non-latch-up IGBTs became the basic IGBT patent of actual devices.