Following the commercialization of power MOSFETs in the 1970s, B. Jayant Baliga submitted a patent disclosure at General Electric (GE) in 1977 describing a power semiconductor device with the IGBT mode of operation, including the MOS gating of thyristors, a four-layer VMOS (V-groove MOSFET) structure, and the use of MOS-gated structures to control a four-layer semiconductor device. He began fabricating the IGBT device with the assistance of Margaret Lazeri at GE in 1978 and successfully completed the project in 1979. The results of the experiments were reported in 1979. The device structure was referred to as a "V-groove MOSFET device with the drain region replaced by a p-type anode region" in this paper and subsequently as "the insulated-gate rectifier" (IGR), the insulated-gate transistor (IGT), the conductivity-modulated field-effect transistor (COMFET) and "bipolar-mode MOSFET".