As the precursors approach the semiconductor wafer, they undergo pyrolysis and the subspecies absorb onto the semiconductor wafer surface. Surface reaction of the precursor subspecies results in the incorporation of elements into a new epitaxial layer of the semiconductor crystal lattice. In the mass-transport-limited growth regime in which MOCVD reactors typically operate, growth is driven by supersaturation of chemical species in the vapor phase. MOCVD can grow films containing combinations of group III and group V, group II and group VI, group IV.