The magnetoresistance depends on many parameters such as the geometry of the device (CIP or CPP), its temperature, and the thicknesses of ferromagnetic and non-magnetic layers. At a temperature of 4.2 K and a thickness of cobalt layers of 1.5 nm, increasing the thickness of copper layers dCu from 1 to 10 nm decreased δH from 80 to 10% in the CIP geometry. Meanwhile, in the CPP geometry the maximum of δH (125%) was observed for dCu = 2.5 nm, and increasing dCu to 10 nm reduced δH to 60% in an oscillating manner.