As described above, {TAIL ~ the preferred thickness} of {HEAD ~ silicon nitride layer} 118 may vary depending on the particular integrated circuit application being designed, however, in a preferred 0.25 micron process technology application, the thickness of silicon nitride layer 118 may be between about 3,000 angstroms and about 15,000 angstroms, and most preferably about 6,000 angstroms 
As described above , { TAIL ~ the preferred thickness } of { HEAD ~ silicon nitride layer } 118 may vary depending on the particular integrated circuit application being designed , however , in a preferred 0.25 micron process technology application , the thickness of silicon nitride layer 118 may be between about 3,000 angstroms and about 15,000 angstroms , and most preferably about 6,000 angstroms
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