The illustrative embodiments provide a design structure for actively biasing field effect transistors in a loop filter in an integrated phase lock loop circuit to form {HEAD ~ precision integrated resistors} having a reduced area and improved {TAIL ~ high frequency capability} 
The illustrative embodiments provide a design structure for actively biasing field effect transistors in a loop filter in an integrated phase lock loop circuit to form { HEAD ~ precision integrated resistors } having a reduced area and improved { TAIL ~ high frequency capability }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL