More particularly, embodiments of {TAIL ~ the present invention} relate to methods of {HEAD ~ fabricating} gated lateral thyristor based random access memory devices used in semiconductor memory devices, and to memory cell structures and memory devices which implement such GLTRAM devices 
More particularly , embodiments of { TAIL ~ the present invention } relate to methods of { HEAD ~ fabricating } gated lateral thyristor based random access memory devices used in semiconductor memory devices , and to memory cell structures and memory devices which implement such GLTRAM devices
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