Preferably, {HEAD ~ the nozzle}, channel and recess are etched from the silicon substrate by {TAIL ~ reactive ion etching} and other standard semiconductor processing techniques 
Preferably , { HEAD ~ the nozzle } , channel and recess are etched from the silicon substrate by { TAIL ~ reactive ion etching } and other standard semiconductor processing techniques
OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH REL REL OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH