{HEAD ~ The pattern} of the partially etched cavities is determined in {TAIL ~ accordance} with the pattern of dies on the device wafer  
{ HEAD ~ The pattern } of the partially etched cavities is determined in { TAIL ~ accordance } with the pattern of dies on the device wafer
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH