Thereby, in practice, the composite bonding layers 3 made by above material with melting point between 30° C. to 500° C. are piled in sequence on the epitaxial layers 11 of the semiconductor structure 1 under low temperature environment by means of {HEAD ~ methods} such as sputtering or {TAIL ~ evaporation} 
Thereby , in practice , the composite bonding layers 3 made by above material with melting point between 30 ° C. to 500 ° C. are piled in sequence on the epitaxial layers 11 of the semiconductor structure 1 under low temperature environment by means of { HEAD ~ methods } such as sputtering or { TAIL ~ evaporation }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL REL OTH OTH TAIL TAIL TAIL TAIL TAIL