The present invention relates to {HEAD ~ a method} for epitaxially growing a semiconductor metal compound layer, in particular, a semiconductor metal compound layer with high crystal orientation, in a surface portion of {TAIL ~ a semiconductor layer} 
The present invention relates to { HEAD ~ a method } for epitaxially growing a semiconductor metal compound layer , in particular , a semiconductor metal compound layer with high crystal orientation , in a surface portion of { TAIL ~ a semiconductor layer }
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL