The illustrative embodiments provide a design structure for actively biasing field effect transistors in a loop filter in {HEAD ~ an integrated phase lock loop circuit} to form {TAIL ~ precision integrated resistors} having a reduced area and improved high frequency capability 
The illustrative embodiments provide a design structure for actively biasing field effect transistors in a loop filter in { HEAD ~ an integrated phase lock loop circuit } to form { TAIL ~ precision integrated resistors } having a reduced area and improved high frequency capability
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