with respect to the p channel MOS and by silicate glass, such as AsSG, PSG, etc., with {HEAD ~ respect} to {TAIL ~ the n channel MOS} to implement a high temperature and short time heat process by using the RTA process to thereby carry out solid phase diffusion from the side walls to form a diffused layer shallower than a diffused layer by ion implantation and RTA 
with respect to the p channel MOS and by silicate glass , such as AsSG , PSG , etc . , with { HEAD ~ respect } to { TAIL ~ the n channel MOS } to implement a high temperature and short time heat process by using the RTA process to thereby carry out solid phase diffusion from the side walls to form a diffused layer shallower than a diffused layer by ion implantation and RTA
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