These and other objects are provided, according to the present invention, by {TAIL ~ a NAND type flash memory device} having a dummy region forming {HEAD ~ a dummy pattern} in which a common source line is formed to cross only with an isolation layer adjacent an active region of a normal pattern forming memory cells 
These and other objects are provided , according to the present invention , by { TAIL ~ a NAND type flash memory device } having a dummy region forming { HEAD ~ a dummy pattern } in which a common source line is formed to cross only with an isolation layer adjacent an active region of a normal pattern forming memory cells
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