In the aforementioned embodiment, the DMOS device may include a plurality of the first buried layers, preferably {HEAD ~ each} having {TAIL ~ a second conductive type impurity density} higher than that of the high voltage well 
In the aforementioned embodiment , the DMOS device may include a plurality of the first buried layers , preferably { HEAD ~ each } having { TAIL ~ a second conductive type impurity density } higher than that of the high voltage well
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH