forming on the organic anti reflection coating a pattern of a resist containing C═O bonds and not more than 20% by {HEAD ~ weight ratio} of {TAIL ~ benzene nucleus} that represents a resist material used in ArE lithography 
forming on the organic anti reflection coating a pattern of a resist containing C ═ O bonds and not more than 20 % by { HEAD ~ weight ratio } of { TAIL ~ benzene nucleus } that represents a resist material used in ArE lithography
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH