{HEAD ~ The damage layer} is formed on the silicon substrate by dry etching a designated part of the silicon substrate, and the dual oxide layer is formed by using the properties of {TAIL ~ SiO2} by which the oxide layer growth speed on the damage layer is slower than that on the silicon substrate 
{ HEAD ~ The damage layer } is formed on the silicon substrate by dry etching a designated part of the silicon substrate , and the dual oxide layer is formed by using the properties of { TAIL ~ SiO2 } by which the oxide layer growth speed on the damage layer is slower than that on the silicon substrate
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