{HEAD ~ An oxide material} is defined over the first silicon nitride barrier layer that lies over the semiconductor substrate and {TAIL ~ the top surface} of the at least one metallization line having the first silicon nitride barrier layer, and the transition edges of the at least one metallization line do not have the oxide material defined over the silicon nitride barrier layer 
{ HEAD ~ An oxide material } is defined over the first silicon nitride barrier layer that lies over the semiconductor substrate and { TAIL ~ the top surface } of the at least one metallization line having the first silicon nitride barrier layer , and the transition edges of the at least one metallization line do not have the oxide material defined over the silicon nitride barrier layer
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