Even more particularly, the present invention relates to non overly destructive dry plasma etching processes, i.e., those which damage neither the sidewalls of {HEAD ~ the semiconductor structures} nor the surface of {TAIL ~ the semiconductor wafer} 
Even more particularly , the present invention relates to non overly destructive dry plasma etching processes , i.e. , those which damage neither the sidewalls of { HEAD ~ the semiconductor structures } nor the surface of { TAIL ~ the semiconductor wafer }
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