The present invention relates to {HEAD ~ a semiconductor substrate} and, more particularly to a semiconductor substrate on which a semiconductor film, having crystalline grains, whose dimensions are increased by {TAIL ~ zone melting recrystallization}, is formed on an insulating film 
The present invention relates to { HEAD ~ a semiconductor substrate } and , more particularly to a semiconductor substrate on which a semiconductor film , having crystalline grains , whose dimensions are increased by { TAIL ~ zone melting recrystallization } , is formed on an insulating film
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