The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula nSiH4−n , and {HEAD ~ an oxidative gas} by {TAIL ~ a plasma} CVD 
The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula nSiH4−n , and { HEAD ~ an oxidative gas } by { TAIL ~ a plasma } CVD
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH