A gate structure and a cap layer are formed, wherein {HEAD ~ the gate structure} is disposed across parts of the fin shaped structure and {TAIL ~ parts} of the substrate, the cap layer is on the gate structure, and the cap layer includes a first cap layer on the gate structure and a second cap layer on the first cap layer 
A gate structure and a cap layer are formed , wherein { HEAD ~ the gate structure } is disposed across parts of the fin shaped structure and { TAIL ~ parts } of the substrate , the cap layer is on the gate structure , and the cap layer includes a first cap layer on the gate structure and a second cap layer on the first cap layer
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH