In {HEAD ~ accordance} with the invention, a range of possible threshold voltages for a memory cell in a multibit per {TAIL ~ cell memory} is divided into allowed states associated with data values and forbidden zones between the allowed states 
In { HEAD ~ accordance } with the invention , a range of possible threshold voltages for a memory cell in a multibit per { TAIL ~ cell memory } is divided into allowed states associated with data values and forbidden zones between the allowed states
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