{HEAD ~ The apparatus} 5, wherein each photodiode comprises {TAIL ~ a P+ layer} doped into the bulk semiconductor material 
{ HEAD ~ The apparatus } 5 , wherein each photodiode comprises { TAIL ~ a P+ layer } doped into the bulk semiconductor material
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH