A photolithographic method wherein {TAIL ~ a mask} is made by pattern exposing and developing a o quinone diazide sensitized phenol formaldehyde resist layer, the formed resist mask then being used directly as an exposure mask for {HEAD ~ a layer} of deep ultraviolet sensitive resist such as an alkyl methacrylate resist 
A photolithographic method wherein { TAIL ~ a mask } is made by pattern exposing and developing a o quinone diazide sensitized phenol formaldehyde resist layer , the formed resist mask then being used directly as an exposure mask for { HEAD ~ a layer } of deep ultraviolet sensitive resist such as an alkyl methacrylate resist
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