In {HEAD ~ fabrication} of {TAIL ~ a semiconductor device}, firstly an isolation trench is formed on a substrate to isolate a plurality of semiconductor elements, and then a thermal oxide film is formed on a sidewall of the trench, whereupon a silicon oxide film is formed on the substrate by chemical vapor deposition 
In { HEAD ~ fabrication } of { TAIL ~ a semiconductor device } , firstly an isolation trench is formed on a substrate to isolate a plurality of semiconductor elements , and then a thermal oxide film is formed on a sidewall of the trench , whereupon a silicon oxide film is formed on the substrate by chemical vapor deposition
OTH HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH