wherein {HEAD ~ a mixed gas} of {TAIL ~ Ar} with a flow ratio of not more than 10% relative to a total plasma gas flow and CxHyFz that represents a fluorocarbon gas is used as the plasma gas for etching the organic anti reflection coating and a portion of the layer to be processed, and 
wherein { HEAD ~ a mixed gas } of { TAIL ~ Ar } with a flow ratio of not more than 10 % relative to a total plasma gas flow and CxHyFz that represents a fluorocarbon gas is used as the plasma gas for etching the organic anti reflection coating and a portion of the layer to be processed , and
OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH