A semiconductor device is made by {HEAD ~ steps} of removing portions of a first capping layer, removing portions of a sacrificial layer, recessing {TAIL ~ sidewalls}, and forming fin structures 
A semiconductor device is made by { HEAD ~ steps } of removing portions of a first capping layer , removing portions of a sacrificial layer , recessing { TAIL ~ sidewalls } , and forming fin structures
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH