{TAIL ~ Advantages} of {HEAD ~ preferred embodiments} of the present invention include providing methods of patterning MTJs of MRAM devices wherein a wet etch process may be used to pattern the top magnetic material layer 
{ TAIL ~ Advantages } of { HEAD ~ preferred embodiments } of the present invention include providing methods of patterning MTJs of MRAM devices wherein a wet etch process may be used to pattern the top magnetic material layer
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