{HEAD ~ The plasma processing apparatus} 1, wherein the processing chamber is provided therein with an electrode for supporting the semiconductor device, and wherein the gas shower plate is provided between the electrode for supporting the semiconductor device and {TAIL ~ the antenna electrode} 
{ HEAD ~ The plasma processing apparatus } 1 , wherein the processing chamber is provided therein with an electrode for supporting the semiconductor device , and wherein the gas shower plate is provided between the electrode for supporting the semiconductor device and { TAIL ~ the antenna electrode }
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