Finally, the compound semiconductor substrate 10 is removed by {TAIL ~ means} of methods , so that the epitaxial layers 11 grown on the compound semiconductor substrate 10 can be transferred onto {HEAD ~ the substrate} 2 to form a high efficiency photonic device 5 
Finally , the compound semiconductor substrate 10 is removed by { TAIL ~ means } of methods , so that the epitaxial layers 11 grown on the compound semiconductor substrate 10 can be transferred onto { HEAD ~ the substrate } 2 to form a high efficiency photonic device 5
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