A substrate processing method is provided to process a substrate having a structure in which a lower photoresist layer, a hard mask layer containing {HEAD ~ silicon}, and an upper photoresist layer are sequentially formed on {TAIL ~ a target layer} to be processed 
A substrate processing method is provided to process a substrate having a structure in which a lower photoresist layer , a hard mask layer containing { HEAD ~ silicon } , and an upper photoresist layer are sequentially formed on { TAIL ~ a target layer } to be processed
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH