{TAIL ~ An oxide material} is defined over the first silicon nitride barrier layer that lies over the semiconductor substrate and the top surface of the at least one metallization line having the first silicon nitride barrier layer, and {HEAD ~ the transition edges} of the at least one metallization line do not have the oxide material defined over the silicon nitride barrier layer 
{ TAIL ~ An oxide material } is defined over the first silicon nitride barrier layer that lies over the semiconductor substrate and the top surface of the at least one metallization line having the first silicon nitride barrier layer , and { HEAD ~ the transition edges } of the at least one metallization line do not have the oxide material defined over the silicon nitride barrier layer
TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH