The semiconductor structure 3, wherein the single crystalline layer comprises, disposed between {TAIL ~ the nucleation layer} and {HEAD ~ the bulk layer}, a transitional layer having a morphology that is less pitted with increasing thickness 
The semiconductor structure 3 , wherein the single crystalline layer comprises , disposed between { TAIL ~ the nucleation layer } and { HEAD ~ the bulk layer } , a transitional layer having a morphology that is less pitted with increasing thickness
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH