In fabrication of a semiconductor device, firstly {HEAD ~ an isolation trench} is formed on a substrate to isolate a plurality of semiconductor elements, and then a thermal oxide film is formed on a sidewall of {TAIL ~ the trench}, whereupon a silicon oxide film is formed on the substrate by chemical vapor deposition 
In fabrication of a semiconductor device , firstly { HEAD ~ an isolation trench } is formed on a substrate to isolate a plurality of semiconductor elements , and then a thermal oxide film is formed on a sidewall of { TAIL ~ the trench } , whereupon a silicon oxide film is formed on the substrate by chemical vapor deposition
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