A cellular insulated gate bipolar transistor device has a reduced length of {HEAD ~ the channels} of {TAIL ~ the individual cells} that is formed by reducing the channel drive in time from the customary 120 minutes at 1175° C. to between 60 and 90 minutes at 1175° C 
A cellular insulated gate bipolar transistor device has a reduced length of { HEAD ~ the channels } of { TAIL ~ the individual cells } that is formed by reducing the channel drive in time from the customary 120 minutes at 1175 ° C. to between 60 and 90 minutes at 1175 ° C
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH