{HEAD ~ A method} of dry plasma etching a semiconductor structure , having at least one semiconductor material layer , on a semiconductor wafer , involving a dry plasma reaction gas mixture being chemically selected for, and having an etch rate corresponding to, each semiconductor material layer ; dividing {TAIL ~ the semiconductor structure} into a masked portion and an unmasked portion ; and sequentially exposing the unmasked portion of the semiconductor structure to the dry plasma reaction gas mixture  
{ HEAD ~ A method } of dry plasma etching a semiconductor structure , having at least one semiconductor material layer , on a semiconductor wafer , involving a dry plasma reaction gas mixture being chemically selected for , and having an etch rate corresponding to , each semiconductor material layer ; dividing { TAIL ~ the semiconductor structure } into a masked portion and an unmasked portion ; and sequentially exposing the unmasked portion of the semiconductor structure to the dry plasma reaction gas mixture
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