The damage layer is formed on the silicon substrate by dry etching {TAIL ~ a designated part} of {HEAD ~ the silicon substrate}, and the dual oxide layer is formed by using the properties of SiO2 by which the oxide layer growth speed on the damage layer is slower than that on the silicon substrate 
The damage layer is formed on the silicon substrate by dry etching { TAIL ~ a designated part } of { HEAD ~ the silicon substrate } , and the dual oxide layer is formed by using the properties of SiO2 by which the oxide layer growth speed on the damage layer is slower than that on the silicon substrate
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