Viewed from a second process aspect, the present invention is directed to a method of fabricating field effect transistors each having a drain region and a source region in {HEAD ~ a semiconductor body} having {TAIL ~ a major surface} and having a bulk of a first conductivity type 
Viewed from a second process aspect , the present invention is directed to a method of fabricating field effect transistors each having a drain region and a source region in { HEAD ~ a semiconductor body } having { TAIL ~ a major surface } and having a bulk of a first conductivity type
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH