{TAIL ~ the insulative diffusion barrier layer} is formed to have a dielectric being 5 or less, a leak current at a test temperature of {HEAD ~ 140° C.}, under an electric field strength of 2 MV/cm being 10 nA or less per 1 cm2, and a dielectric breakdown lifetime when copper is used as an anode at a temperature of 140° C. being at least 100 years, and 
{ TAIL ~ the insulative diffusion barrier layer } is formed to have a dielectric being 5 or less , a leak current at a test temperature of { HEAD ~ 140 ° C. } , under an electric field strength of 2 MV / cm being 10 nA or less per 1 cm2 , and a dielectric breakdown lifetime when copper is used as an anode at a temperature of 140 ° C. being at least 100 years , and
TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH