The method for bonding a semiconductor structure with a substrate 9, wherein the composite bonding layer is made by material that contains gallium and is selected from the group including: indium gallium, zinc gallium, tin gallium, {HEAD ~ gold gallium}, silver gallium, platinum gallium, {TAIL ~ bismuth gallium}, indium gallium tin, indium gallium indium, zinc gallium zinc, indium gallium silver, and indium gallium gold 
The method for bonding a semiconductor structure with a substrate 9 , wherein the composite bonding layer is made by material that contains gallium and is selected from the group including : indium gallium , zinc gallium , tin gallium , { HEAD ~ gold gallium } , silver gallium , platinum gallium , { TAIL ~ bismuth gallium } , indium gallium tin , indium gallium indium , zinc gallium zinc , indium gallium silver , and indium gallium gold
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