A method of forming {HEAD ~ an integrated circuit device} includes the steps of forming a first insulating layer on an integrated circuit substrate, forming a first capacitor electrode on the insulating layer opposite {TAIL ~ the substrate}, and forming a second insulating layer on the first capacitor electrode and on the insulating layer opposite the substrate 
A method of forming { HEAD ~ an integrated circuit device } includes the steps of forming a first insulating layer on an integrated circuit substrate , forming a first capacitor electrode on the insulating layer opposite { TAIL ~ the substrate } , and forming a second insulating layer on the first capacitor electrode and on the insulating layer opposite the substrate
OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH