A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of {HEAD ~ a material} comprising {TAIL ~ copper} as a main ingredient, and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301 
A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed , a first conductor 301 at least a portion of the peripheral surface of which is made of { HEAD ~ a material } comprising { TAIL ~ copper } as a main ingredient , and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301
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