These manufacturing methods facilitate control of the oxygen concentration in the SRO, {HEAD ~ the relative thicknesses} of the silicon oxide and {TAIL ~ silicon layers}, and provides improved step coverage, thus allowing the manufacturing of high quality semiconductor devices 
These manufacturing methods facilitate control of the oxygen concentration in the SRO , { HEAD ~ the relative thicknesses } of the silicon oxide and { TAIL ~ silicon layers } , and provides improved step coverage , thus allowing the manufacturing of high quality semiconductor devices
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH