The invention relates to a spin transfer MRAM cell in which {HEAD ~ an upper CPP cell} is separated from {TAIL ~ a lower MTJ cell} by a conducting layer in order to form different read and write paths, and each bit cell has two spin transfer MRAM cells that are written into opposite resistance states 
The invention relates to a spin transfer MRAM cell in which { HEAD ~ an upper CPP cell } is separated from { TAIL ~ a lower MTJ cell } by a conducting layer in order to form different read and write paths , and each bit cell has two spin transfer MRAM cells that are written into opposite resistance states
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH