In the above metal compound powder, preferably, compound is not dissociated under the irradiation with a carbon dioxide gas laser, and therefore, {HEAD ~ no adverse influence} is caused on a semiconductor chip and {TAIL ~ the intimate contact capability} of a hole wall 
In the above metal compound powder , preferably , compound is not dissociated under the irradiation with a carbon dioxide gas laser , and therefore , { HEAD ~ no adverse influence } is caused on a semiconductor chip and { TAIL ~ the intimate contact capability } of a hole wall
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH