A cellular insulated gate bipolar transistor device has a reduced length of the channels of the individual cells that is formed by reducing {TAIL ~ the channel drive} in time from {HEAD ~ the customary 120 minutes} at 1175° C. to between 60 and 90 minutes at 1175° C 
A cellular insulated gate bipolar transistor device has a reduced length of the channels of the individual cells that is formed by reducing { TAIL ~ the channel drive } in time from { HEAD ~ the customary 120 minutes } at 1175 ° C. to between 60 and 90 minutes at 1175 ° C
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH