Advantages of {HEAD ~ the present invention} include selective etching of multiple semiconductor material layers without a prematurely self terminating etching step and eliminating any potential over etching of {TAIL ~ the multilayer semiconductor structure} 
Advantages of { HEAD ~ the present invention } include selective etching of multiple semiconductor material layers without a prematurely self terminating etching step and eliminating any potential over etching of { TAIL ~ the multilayer semiconductor structure }
OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL