FIG 2 illustrates, in a cross sectional view, a dry plasma etched {HEAD ~ multilayer semiconductor structure} 20 of {TAIL ~ a semiconductor device} 2000, according to the present invention 
FIG 2 illustrates , in a cross sectional view , a dry plasma etched { HEAD ~ multilayer semiconductor structure } 20 of { TAIL ~ a semiconductor device } 2000 , according to the present invention
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH