Single event upset hardening is provided in a static random access memory cell, including cross coupled inverters, by {HEAD ~ the restoration} of {TAIL ~ voltages} at selected nodes within the cell by a pair of transistors connected to the cross coupling between inverters 
Single event upset hardening is provided in a static random access memory cell , including cross coupled inverters , by { HEAD ~ the restoration } of { TAIL ~ voltages } at selected nodes within the cell by a pair of transistors connected to the cross coupling between inverters
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH