the insulative diffusion barrier layer is formed to have a dielectric being 5 or less, a leak current at a test temperature of 140° C., under {HEAD ~ an electric field strength} of {TAIL ~ 2 MV/cm} being 10 nA or less per 1 cm2, and a dielectric breakdown lifetime when copper is used as an anode at a temperature of 140° C. being at least 100 years, and 
the insulative diffusion barrier layer is formed to have a dielectric being 5 or less , a leak current at a test temperature of 140 ° C. , under { HEAD ~ an electric field strength } of { TAIL ~ 2 MV / cm } being 10 nA or less per 1 cm2 , and a dielectric breakdown lifetime when copper is used as an anode at a temperature of 140 ° C. being at least 100 years , and
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