The first insulative diffusion barrier layer 203 is formed by using {HEAD ~ a gas mixture} at least containing {TAIL ~ an alkoxy silane} represented by the general formula nSiH4−n , and an oxidative gas by a plasma CVD 
The first insulative diffusion barrier layer 203 is formed by using { HEAD ~ a gas mixture } at least containing { TAIL ~ an alkoxy silane } represented by the general formula nSiH4−n , and an oxidative gas by a plasma CVD
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH