In view of the above, the present invention is characterized in that in a manufacturing process of {TAIL ~ semiconductor devices} integrated on a single substrate, laser light is selectively applied to {HEAD ~ the substrate} at different illumination energies that are determined in accordance with required semiconductor characteristics 
In view of the above , the present invention is characterized in that in a manufacturing process of { TAIL ~ semiconductor devices } integrated on a single substrate , laser light is selectively applied to { HEAD ~ the substrate } at different illumination energies that are determined in accordance with required semiconductor characteristics
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