In the present invention, the oxide layer is used not due to the dielectric properties, but the easy formation and low cost for {HEAD ~ the oxide layer} to form {TAIL ~ a template pattern} using a semiconductor manufacturing process 
In the present invention , the oxide layer is used not due to the dielectric properties , but the easy formation and low cost for { HEAD ~ the oxide layer } to form { TAIL ~ a template pattern } using a semiconductor manufacturing process
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH