As such, the previous process problems are addressed by using {TAIL ~ the present invention dry plasma} etching method M that selectively etches multiple layers of {HEAD ~ semiconductor material} 21 without a prematurely self terminating etching step nor an over etching of the multilayer semiconductor structure 20 
As such , the previous process problems are addressed by using { TAIL ~ the present invention dry plasma } etching method M that selectively etches multiple layers of { HEAD ~ semiconductor material } 21 without a prematurely self terminating etching step nor an over etching of the multilayer semiconductor structure 20
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH