{HEAD ~ The method} for processing a high k dielectric layer 13, wherein {TAIL ~ the first process gas} comprises oxygen radicals and the second process gas comprises nitrogen  
{ HEAD ~ The method } for processing a high k dielectric layer 13 , wherein { TAIL ~ the first process gas } comprises oxygen radicals and the second process gas comprises nitrogen
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH