According to first or second method for fabricating a semiconductor device of this invention, {HEAD ~ rapid thermal annealing} is carried out with {TAIL ~ a nonmetal element} distributed in a region in the vicinity of the surface of a semiconductor layer, so as to cause a reaction between an element included in the semiconductor layer and a metal included in a metal film 
According to first or second method for fabricating a semiconductor device of this invention , { HEAD ~ rapid thermal annealing } is carried out with { TAIL ~ a nonmetal element } distributed in a region in the vicinity of the surface of a semiconductor layer , so as to cause a reaction between an element included in the semiconductor layer and a metal included in a metal film
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