If the target memory cell conducts during a verify cycle 220, {TAIL ~ the threshold voltage} of the memory cell is less than {HEAD ~ voltage Vvfy}, and read/write control 170 starts another programming cycle 210 to further increase the threshold voltage 
If the target memory cell conducts during a verify cycle 220 , { TAIL ~ the threshold voltage } of the memory cell is less than { HEAD ~ voltage Vvfy } , and read / write control 170 starts another programming cycle 210 to further increase the threshold voltage
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH