{HEAD ~ The magnitude} of the current exceeding the threshold current density initiates electromigration of the source/drain silicide into the channel region, such that {TAIL ~ the source/drain} of the FET is shorted to the substrate after programming 
{ HEAD ~ The magnitude } of the current exceeding the threshold current density initiates electromigration of the source / drain silicide into the channel region , such that { TAIL ~ the source / drain } of the FET is shorted to the substrate after programming
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH