An object of the present invention is to provide a memory device capable of writing and erasing {HEAD ~ information} at {TAIL ~ high speed} and with a low gate voltage, conducting high integration with reduced power dissipation, changing conductivity of the conduction layer depending upon whether there are accumulated charges or not, even if the memory device is made finer, and retaining the information accurately, and to provide a memory array formed by integrating such memory devices 
An object of the present invention is to provide a memory device capable of writing and erasing { HEAD ~ information } at { TAIL ~ high speed } and with a low gate voltage , conducting high integration with reduced power dissipation , changing conductivity of the conduction layer depending upon whether there are accumulated charges or not , even if the memory device is made finer , and retaining the information accurately , and to provide a memory array formed by integrating such memory devices
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