Since it is formed on a flat top surface in such a case, it is possible to apply the conditions for diffusion or {HEAD ~ ion implantation} that are used in the fabrication of VSLIs, with {TAIL ~ substantially no change} of the process 
Since it is formed on a flat top surface in such a case , it is possible to apply the conditions for diffusion or { HEAD ~ ion implantation } that are used in the fabrication of VSLIs , with { TAIL ~ substantially no change } of the process
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH