{HEAD ~ A substrate processing method} is provided to process a substrate having a structure in which {TAIL ~ a lower photoresist layer}, a hard mask layer containing silicon, and an upper photoresist layer are sequentially formed on a target layer to be processed 
{ HEAD ~ A substrate processing method } is provided to process a substrate having a structure in which { TAIL ~ a lower photoresist layer } , a hard mask layer containing silicon , and an upper photoresist layer are sequentially formed on a target layer to be processed
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