Meanwhile, using the nitride layer, after depositing {TAIL ~ the silicon nitride} to a thickness of about 10 to about 100 Å on the silicon substrate, a pattern of the silicon nitride layer is defined by {HEAD ~ photolithography} and the silicon nitride layer is partially removed depending on the pattern 
Meanwhile , using the nitride layer , after depositing { TAIL ~ the silicon nitride } to a thickness of about 10 to about 100 Å on the silicon substrate , a pattern of the silicon nitride layer is defined by { HEAD ~ photolithography } and the silicon nitride layer is partially removed depending on the pattern
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