Accordingly, {HEAD ~ stress voltage measurements} at 10 V suggest that semiconductor devices fabricated according to {TAIL ~ the example embodiment} of Sample 1 can provide a memory window of greater than 3.2 V 
Accordingly , { HEAD ~ stress voltage measurements } at 10 V suggest that semiconductor devices fabricated according to { TAIL ~ the example embodiment } of Sample 1 can provide a memory window of greater than 3.2 V
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