Embodiments of the invention provide {HEAD ~ methods} of forming {TAIL ~ a titanium nitride layer} that suppress the generation of hafnium chloride on a surface of a hafnium oxide layer, and methods of fabricating a storage capacitor having the titanium nitride layer 
Embodiments of the invention provide { HEAD ~ methods } of forming { TAIL ~ a titanium nitride layer } that suppress the generation of hafnium chloride on a surface of a hafnium oxide layer , and methods of fabricating a storage capacitor having the titanium nitride layer
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH