{HEAD ~ The DMOS device} is formed in a substrate, and includes a high voltage well, a first field oxide region, a first gate, a first source, a drain, a body region, a body electrode, a second field oxide region, {TAIL ~ a second gate}, and a second source 
{ HEAD ~ The DMOS device } is formed in a substrate , and includes a high voltage well , a first field oxide region , a first gate , a first source , a drain , a body region , a body electrode , a second field oxide region , { TAIL ~ a second gate } , and a second source
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