A drain region is formed at {HEAD ~ the face} to be of the second conductivity type and to adjoin the drift region, and to be spaced from {TAIL ~ the IGFET body} 
A drain region is formed at { HEAD ~ the face } to be of the second conductivity type and to adjoin the drift region , and to be spaced from { TAIL ~ the IGFET body }
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL