{HEAD ~ The mixture} of silicon oxide and germanium oxide may be deposited over {TAIL ~ the underlying surface} on the integrated circuit structure by a conventional chemical vapor deposition process, e.g., by flowing a mixture of silane and germane into a chamber maintained at atmospheric pressure or under vacuum, e.g., as low as a few Torr, while a wafer temperature of from about 20° C. to about 500° C., preferably from about 300° C. to about 450° C., is maintained 
{ HEAD ~ The mixture } of silicon oxide and germanium oxide may be deposited over { TAIL ~ the underlying surface } on the integrated circuit structure by a conventional chemical vapor deposition process , e.g. , by flowing a mixture of silane and germane into a chamber maintained at atmospheric pressure or under vacuum , e.g. , as low as a few Torr , while a wafer temperature of from about 20 ° C. to about 500 ° C. , preferably from about 300 ° C. to about 450 ° C. , is maintained
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