The invention generally relates to multi layered semiconductor structures and more particularly to {HEAD ~ a method} for preventing or avoiding {TAIL ~ the presence} of unetched polymer residues including photoresist remaining in anisotropically etched semiconductor features including trench line features formed in a dual damascene process 
The invention generally relates to multi layered semiconductor structures and more particularly to { HEAD ~ a method } for preventing or avoiding { TAIL ~ the presence } of unetched polymer residues including photoresist remaining in anisotropically etched semiconductor features including trench line features formed in a dual damascene process
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