{HEAD ~ This invention} relates to methods of depositing aluminum nitride comprising layers over semiconductor substrates, to methods of forming DRAM circuitry, to DRAM circuitry, to {TAIL ~ methods} of forming field emission devices, and to field emission devices 
{ HEAD ~ This invention } relates to methods of depositing aluminum nitride comprising layers over semiconductor substrates , to methods of forming DRAM circuitry , to DRAM circuitry , to { TAIL ~ methods } of forming field emission devices , and to field emission devices
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