Subsequently, a mask 70, for example a photoresist mask, which comprises an opening 72 in the area of the coil trace 10, is formed on {HEAD ~ the surface} 62 of {TAIL ~ the dielectric layer} 60 
Subsequently , a mask 70 , for example a photoresist mask , which comprises an opening 72 in the area of the coil trace 10 , is formed on { HEAD ~ the surface } 62 of { TAIL ~ the dielectric layer } 60
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH