The invention relates to a spin transfer MRAM cell in which an upper CPP cell is separated from a lower MTJ cell by a conducting layer in order to form {TAIL ~ different read} and write paths, and each bit cell has two spin transfer MRAM cells that are written into {HEAD ~ opposite resistance states} 
The invention relates to a spin transfer MRAM cell in which an upper CPP cell is separated from a lower MTJ cell by a conducting layer in order to form { TAIL ~ different read } and write paths , and each bit cell has two spin transfer MRAM cells that are written into { HEAD ~ opposite resistance states }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD