{HEAD ~ The present invention} relates to a semiconductor substrate and, more particularly to {TAIL ~ a semiconductor substrate} on which a semiconductor film, having crystalline grains, whose dimensions are increased by zone melting recrystallization, is formed on an insulating film 
{ HEAD ~ The present invention } relates to a semiconductor substrate and , more particularly to { TAIL ~ a semiconductor substrate } on which a semiconductor film , having crystalline grains , whose dimensions are increased by zone melting recrystallization , is formed on an insulating film
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