{HEAD ~ A capacitor} according to the present invention enables the HSG layer to grow on an internal wall of a storage electrode, thereby preventing a micro bridge between storage electrodes resulting from abnormal growth or overgrowth of {TAIL ~ the HSG layer} 
{ HEAD ~ A capacitor } according to the present invention enables the HSG layer to grow on an internal wall of a storage electrode , thereby preventing a micro bridge between storage electrodes resulting from abnormal growth or overgrowth of { TAIL ~ the HSG layer }
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