Moreover, the capacitor dielectric layer 122 can have a thickness in the range of 500 Angstroms to 1,000 Angstroms, and the dielectric layer can be a layer of silicon oxide formed by chemical vapor deposition, {HEAD ~ silicon nitride} formed by {TAIL ~ chemical vapor deposition}, or tantalum oxide formed by physical vapor deposition 
Moreover , the capacitor dielectric layer 122 can have a thickness in the range of 500 Angstroms to 1,000 Angstroms , and the dielectric layer can be a layer of silicon oxide formed by chemical vapor deposition , { HEAD ~ silicon nitride } formed by { TAIL ~ chemical vapor deposition } , or tantalum oxide formed by physical vapor deposition
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH