The present invention relates to a dry etching apparatus of the type used for etching an inter layer dielectric among dry etching processes and to a dry etching method; and, {HEAD ~ the present invention} relates particularly to a method in which resist damage can be reduced in via etching, high aspect ratio contact etching, {TAIL ~ self align contact} etching, trench etching, damascene etching, gate mask etching, and the like using a resist pattern for ArF lithography or later lithography 
The present invention relates to a dry etching apparatus of the type used for etching an inter layer dielectric among dry etching processes and to a dry etching method ; and , { HEAD ~ the present invention } relates particularly to a method in which resist damage can be reduced in via etching , high aspect ratio contact etching , { TAIL ~ self align contact } etching , trench etching , damascene etching , gate mask etching , and the like using a resist pattern for ArF lithography or later lithography
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