According to the present invention, in {HEAD ~ a nitride semiconductor single crystal wafer} having {TAIL ~ a flat principal surface}, crystallographic plane orientation of that principal surface varies locally within a predetermined angular range 
According to the present invention , in { HEAD ~ a nitride semiconductor single crystal wafer } having { TAIL ~ a flat principal surface } , crystallographic plane orientation of that principal surface varies locally within a predetermined angular range
OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH