The illustrative embodiments provide {HEAD ~ a design structure} for {TAIL ~ actively biasing field effect transistors} in a loop filter in an integrated phase lock loop circuit to form precision integrated resistors having a reduced area and improved high frequency capability 
The illustrative embodiments provide { HEAD ~ a design structure } for { TAIL ~ actively biasing field effect transistors } in a loop filter in an integrated phase lock loop circuit to form precision integrated resistors having a reduced area and improved high frequency capability
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