Next, a semiconductor metal compound layer is epitaxially grown in the surface portion of the semiconductor layer by causing a reaction between {HEAD ~ an element} included in {TAIL ~ the semiconductor layer} and a metal included in the metal film through annealing carried out on the metal film 
Next , a semiconductor metal compound layer is epitaxially grown in the surface portion of the semiconductor layer by causing a reaction between { HEAD ~ an element } included in { TAIL ~ the semiconductor layer } and a metal included in the metal film through annealing carried out on the metal film
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH