forming a via hole through the second silicon nitride layer, the applied oxide material and {HEAD ~ the first silicon nitride layer} down to {TAIL ~ the underlying metallization line}, the via hole having walls that are substantially adjacent to the moisture repelling barrier 
forming a via hole through the second silicon nitride layer , the applied oxide material and { HEAD ~ the first silicon nitride layer } down to { TAIL ~ the underlying metallization line } , the via hole having walls that are substantially adjacent to the moisture repelling barrier
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH