The semiconductor read only memory according to this invention includes a plurality of MOS transistors formed on {TAIL ~ a substrate} and silicon resistances of polycrystal or amorphous connected to the source region and the drain region of {HEAD ~ the MOS transistors} 
The semiconductor read only memory according to this invention includes a plurality of MOS transistors formed on { TAIL ~ a substrate } and silicon resistances of polycrystal or amorphous connected to the source region and the drain region of { HEAD ~ the MOS transistors }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD