In particular, {TAIL ~ photodetectors} sensitive in {HEAD ~ the 1.0 1.6 μm region} are often made with InP substrates and either InGaAs active regions or InGaAsP  
In particular , { TAIL ~ photodetectors } sensitive in { HEAD ~ the 1.0 1.6 μm region } are often made with InP substrates and either InGaAs active regions or InGaAsP
OTH OTH OTH TAIL TAIL TAIL TAIL TAIL OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH