Embodiments of the invention provide methods of forming a titanium nitride layer that suppress the generation of {HEAD ~ hafnium chloride} on a surface of a hafnium oxide layer, and methods of fabricating {TAIL ~ a storage capacitor} having the titanium nitride layer 
Embodiments of the invention provide methods of forming a titanium nitride layer that suppress the generation of { HEAD ~ hafnium chloride } on a surface of a hafnium oxide layer , and methods of fabricating { TAIL ~ a storage capacitor } having the titanium nitride layer
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