As described above, in the semiconductor memory device according to {TAIL ~ the present invention}, by forming the respective impurity areas in {HEAD ~ the semiconductor substrate}, the fabrication of the semiconductor memory device having an LDD construction can be achieved 
As described above , in the semiconductor memory device according to { TAIL ~ the present invention } , by forming the respective impurity areas in { HEAD ~ the semiconductor substrate } , the fabrication of the semiconductor memory device having an LDD construction can be achieved
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH