According to the power semiconductor device in accordance with the present invention, also in the case in which the power semiconductor device is driven at a high speed, it is possible to suppress a dielectric breakdown of a gate insulating film without applying an electric field having a high intensity to the gate insulating {HEAD ~ film}, thereby obtaining {TAIL ~ a higher reliability} 
According to the power semiconductor device in accordance with the present invention , also in the case in which the power semiconductor device is driven at a high speed , it is possible to suppress a dielectric breakdown of a gate insulating film without applying an electric field having a high intensity to the gate insulating { HEAD ~ film } , thereby obtaining { TAIL ~ a higher reliability }
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