The invention generally relates to multi layered semiconductor structures and more particularly to a method for preventing or avoiding the presence of {HEAD ~ unetched polymer residues} including {TAIL ~ photoresist} remaining in anisotropically etched semiconductor features including trench line features formed in a dual damascene process 
The invention generally relates to multi layered semiconductor structures and more particularly to a method for preventing or avoiding the presence of { HEAD ~ unetched polymer residues } including { TAIL ~ photoresist } remaining in anisotropically etched semiconductor features including trench line features formed in a dual damascene process
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