A lithographic method of forming submicron polysilicon features on a semiconductor substrate, including the steps of coating said substrate with an anti reflective coating comprising two layers having matched indices of {TAIL ~ refraction} and extinction coefficient selected to reduce reflection to {HEAD ~ less than 1%} with 193 nm wavelength exposure 
A lithographic method of forming submicron polysilicon features on a semiconductor substrate , including the steps of coating said substrate with an anti reflective coating comprising two layers having matched indices of { TAIL ~ refraction } and extinction coefficient selected to reduce reflection to { HEAD ~ less than 1 % } with 193 nm wavelength exposure
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