Accordingly, it is {TAIL ~ an object} of the present invention to provide an improved semiconductor memory device and a fabrication method thereof which is capable of lessening the parasitic capacitance formed due to {HEAD ~ polysilicon and impurity areas} 
Accordingly , it is { TAIL ~ an object } of the present invention to provide an improved semiconductor memory device and a fabrication method thereof which is capable of lessening the parasitic capacitance formed due to { HEAD ~ polysilicon and impurity areas }
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