According to {HEAD ~ a fourth aspect} of {TAIL ~ the present invention}, in a semiconductor substrate and a production method thereof, after the sub grain boundaries in the first semiconductor film are inactivated, a further semiconductor film is epitaxially grown on the first semiconductor film 
According to { HEAD ~ a fourth aspect } of { TAIL ~ the present invention } , in a semiconductor substrate and a production method thereof , after the sub grain boundaries in the first semiconductor film are inactivated , a further semiconductor film is epitaxially grown on the first semiconductor film
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