A field effect device structure comprising a semiconductor p n junction adjacent to {HEAD ~ an insulated gate electrode} is utilized in which a depletion region is created under the gate electrode in the presence of {TAIL ~ alternating forward and reverse biasing} of the p n junction 
A field effect device structure comprising a semiconductor p n junction adjacent to { HEAD ~ an insulated gate electrode } is utilized in which a depletion region is created under the gate electrode in the presence of { TAIL ~ alternating forward and reverse biasing } of the p n junction
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH