A method of making {TAIL ~ an IGFET} with a selectively doped multilevel polysilicon gate that includes {HEAD ~ upper and lower polysilicon gate levels} is disclosed 
A method of making { TAIL ~ an IGFET } with a selectively doped multilevel polysilicon gate that includes { HEAD ~ upper and lower polysilicon gate levels } is disclosed
OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH