According to the tunneling magnetic detecting element of the present invention, the rate of change in resistance can be increased from {HEAD ~ the level} of {TAIL ~ the existing technology} without changing the configurations of the pinned magnetic layer or the free magnetic layer from the existing technology 
According to the tunneling magnetic detecting element of the present invention , the rate of change in resistance can be increased from { HEAD ~ the level } of { TAIL ~ the existing technology } without changing the configurations of the pinned magnetic layer or the free magnetic layer from the existing technology
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH