The semiconductor structure 3 wherein the electrical isolation of the source and {HEAD ~ drain regions} comprises a dielectric region partly surrounding the regions and a dielectric layer under each of {TAIL ~ the regions} 
The semiconductor structure 3 wherein the electrical isolation of the source and { HEAD ~ drain regions } comprises a dielectric region partly surrounding the regions and a dielectric layer under each of { TAIL ~ the regions }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL