The thin film transistor further includes a gate insulating layer on the entire surface of {HEAD ~ the substrate} including {TAIL ~ the gate electrode}, and an active layer on the gate insulating layer along the trench, the active layer having source and drain regions substantially outside the trench 
The thin film transistor further includes a gate insulating layer on the entire surface of { HEAD ~ the substrate } including { TAIL ~ the gate electrode } , and an active layer on the gate insulating layer along the trench , the active layer having source and drain regions substantially outside the trench
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH