The semiconductor device manufacturing method 1, wherein the under bump layer is formed from one of a single film and a laminate of {TAIL ~ a plurality} of films made of one selected from {HEAD ~ a group} consisting of nickel, nickel alloy, copper and copper alloy which are formed by sputtering 
The semiconductor device manufacturing method 1 , wherein the under bump layer is formed from one of a single film and a laminate of { TAIL ~ a plurality } of films made of one selected from { HEAD ~ a group } consisting of nickel , nickel alloy , copper and copper alloy which are formed by sputtering
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