In {HEAD ~ order} to achieve {TAIL ~ the object}, the present inventors have variously examined the causes of the agglomeration and a spike defect occurring in a cobalt silicide layer formed by the epitaxial growth, resulting in finding the following: Thermodynamically, the mechanism for forming cobalt silicide through a reaction between cobalt atoms and silicon atoms is brought by proceeding a reaction, CO2Si→CoSi→CoSi2 
In { HEAD ~ order } to achieve { TAIL ~ the object } , the present inventors have variously examined the causes of the agglomeration and a spike defect occurring in a cobalt silicide layer formed by the epitaxial growth , resulting in finding the following : Thermodynamically , the mechanism for forming cobalt silicide through a reaction between cobalt atoms and silicon atoms is brought by proceeding a reaction , CO2Si→CoSi→CoSi2
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