At this time, a decreasing step is performed with a step for removing an impurity concentrating film on {HEAD ~ the surface} of a silicon wafer, such as an oxide film, depending on {TAIL ~ the surface state} of the silicon water 
At this time , a decreasing step is performed with a step for removing an impurity concentrating film on { HEAD ~ the surface } of a silicon wafer , such as an oxide film , depending on { TAIL ~ the surface state } of the silicon water
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH