For a rare gas to be used at {HEAD ~ the time} of processing the insulating film, any one of {TAIL ~ Xe}, Kr, a mixed gas of Ar and Xe, and a mixed gas of Ar and Kr is applied in place of Ar, giving rise to reduction in pitting and striations after etching 
For a rare gas to be used at { HEAD ~ the time } of processing the insulating film , any one of { TAIL ~ Xe } , Kr , a mixed gas of Ar and Xe , and a mixed gas of Ar and Kr is applied in place of Ar , giving rise to reduction in pitting and striations after etching
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH