The semiconductor device manufacturing method 1, wherein {TAIL ~ the under bump layer} is formed from one of a single film and a laminate of a plurality of {HEAD ~ films} made of one selected from a group consisting of nickel, nickel alloy, copper and copper alloy which are formed by sputtering 
The semiconductor device manufacturing method 1 , wherein { TAIL ~ the under bump layer } is formed from one of a single film and a laminate of a plurality of { HEAD ~ films } made of one selected from a group consisting of nickel , nickel alloy , copper and copper alloy which are formed by sputtering
OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH