The method 1, before forming the photoresist layer and after forming the oxide layer, further comprising forming an etching resistive layer on {HEAD ~ the oxide layer} and forming a silicon containing layer on the etching resistive layer, such that the photoresist layer is formed on {TAIL ~ the silicon containing layer} 
The method 1 , before forming the photoresist layer and after forming the oxide layer , further comprising forming an etching resistive layer on { HEAD ~ the oxide layer } and forming a silicon containing layer on the etching resistive layer , such that the photoresist layer is formed on { TAIL ~ the silicon containing layer }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL