According to a fourth aspect of {HEAD ~ the present invention}, in a semiconductor substrate and a production method thereof, after the sub grain boundaries in the first semiconductor film are inactivated, a further semiconductor film is epitaxially grown on {TAIL ~ the first semiconductor film} 
According to a fourth aspect of { HEAD ~ the present invention } , in a semiconductor substrate and a production method thereof , after the sub grain boundaries in the first semiconductor film are inactivated , a further semiconductor film is epitaxially grown on { TAIL ~ the first semiconductor film }
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL