In fabrication of a semiconductor device, firstly an isolation trench is formed on a substrate to isolate {TAIL ~ a plurality} of semiconductor elements, and then a thermal oxide film is formed on a sidewall of the trench, whereupon a silicon oxide film is formed on the substrate by {HEAD ~ chemical vapor deposition} 
In fabrication of a semiconductor device , firstly an isolation trench is formed on a substrate to isolate { TAIL ~ a plurality } of semiconductor elements , and then a thermal oxide film is formed on a sidewall of the trench , whereupon a silicon oxide film is formed on the substrate by { HEAD ~ chemical vapor deposition }
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