The epitaxial SiC single crystal substrate 1, wherein a buffer region layer is formed between {HEAD ~ said SiC epitaxial film} and said {TAIL ~ SiC single crystal wafer}, and carrier concentration in the buffer region layer gradually increases toward said SiC single crystal wafer side, and a rate of change of said carrier concentration is 80% or less per 0.5 μm in the depthwise direction 
The epitaxial SiC single crystal substrate 1 , wherein a buffer region layer is formed between { HEAD ~ said SiC epitaxial film } and said { TAIL ~ SiC single crystal wafer } , and carrier concentration in the buffer region layer gradually increases toward said SiC single crystal wafer side , and a rate of change of said carrier concentration is 80 % or less per 0.5 μm in the depthwise direction
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