It is an object of the present invention to provide a process for forming a MOS semiconductor device having an LDD structure which is suitable for a VLSI , and in which {HEAD ~ the above described disadvantages} of {TAIL ~ the conventional techniques} are overcome 
It is an object of the present invention to provide a process for forming a MOS semiconductor device having an LDD structure which is suitable for a VLSI , and in which { HEAD ~ the above described disadvantages } of { TAIL ~ the conventional techniques } are overcome
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