Referring to FIG 2D, interlayer dielectric layer 12 is etched using second photosensitive layer pattern PR2 and the reaction by {HEAD ~ product spacers R} as {TAIL ~ etching masks} to form a trench 
Referring to FIG 2D , interlayer dielectric layer 12 is etched using second photosensitive layer pattern PR2 and the reaction by { HEAD ~ product spacers R } as { TAIL ~ etching masks } to form a trench
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH