A method and {HEAD ~ apparatus} for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by {TAIL ~ ion drift} across the oxide that includes depositing charge on the surface of the oxide and heating the wafer to allow mobile ions in the oxide to drift 
A method and { HEAD ~ apparatus } for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by { TAIL ~ ion drift } across the oxide that includes depositing charge on the surface of the oxide and heating the wafer to allow mobile ions in the oxide to drift
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