{HEAD ~ The method} is useful in characterizing {TAIL ~ parameters} of field effect integrated circuit components subject to various charge instability mechanisms and may also be useful as a means for altering charge conditions in various non volatile memory devices 
{ HEAD ~ The method } is useful in characterizing { TAIL ~ parameters } of field effect integrated circuit components subject to various charge instability mechanisms and may also be useful as a means for altering charge conditions in various non volatile memory devices
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