{HEAD ~ An epitaxial SiC single crystal substrate} including a SiC single crystal wafer whose main surface is a c plane or a surface that inclines a c plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC {TAIL ~ epitaxial film} that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less 
{ HEAD ~ An epitaxial SiC single crystal substrate } including a SiC single crystal wafer whose main surface is a c plane or a surface that inclines a c plane with an angle of inclination that is more than 0 degree but less than 10 degrees , and SiC { TAIL ~ epitaxial film } that is formed on the main surface of the SiC single crystal wafer , wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays / cm2 or less
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