According to the present invention, in a nitride semiconductor single crystal wafer having a flat principal surface, {TAIL ~ crystallographic plane orientation} of that principal surface varies locally within {HEAD ~ a predetermined angular range} 
According to the present invention , in a nitride semiconductor single crystal wafer having a flat principal surface , { TAIL ~ crystallographic plane orientation } of that principal surface varies locally within { HEAD ~ a predetermined angular range }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD