In the second diffused region, a distribution in a depth direction of carriers has a profile in which the concentration is more than 5×1018 cm 3 at the peak and is in correspondence with {HEAD ~ a carrier concentration} of {TAIL ~ the semiconductor substrate} at a depth less than 0.04 μm 
In the second diffused region , a distribution in a depth direction of carriers has a profile in which the concentration is more than 5×1018 cm 3 at the peak and is in correspondence with { HEAD ~ a carrier concentration } of { TAIL ~ the semiconductor substrate } at a depth less than 0.04 μm
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