The invention is {HEAD ~ a method} of depositing {TAIL ~ an aluminum nitride} comprising layer over a semiconductor substrate, a method of forming DRAM circuitry, DRAM circuitry, a method of forming a field emission device, and a field emission device 
The invention is { HEAD ~ a method } of depositing { TAIL ~ an aluminum nitride } comprising layer over a semiconductor substrate , a method of forming DRAM circuitry , DRAM circuitry , a method of forming a field emission device , and a field emission device
OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH