determining whether to apply a third programming pulse to {HEAD ~ the drain} of the memory cell with the source of {TAIL ~ the memory cell} at a third voltage level after the applying the second programming pulse 
determining whether to apply a third programming pulse to { HEAD ~ the drain } of the memory cell with the source of { TAIL ~ the memory cell } at a third voltage level after the applying the second programming pulse
OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH