As evident from a comparison of the capacitance voltage data illustrated in FIGS 5A 5C, {HEAD ~ SRO Sample} 1, which was formed by depositing {TAIL ~ a unit stack structure} consisting of a single silicon layer and six silicon oxide layers over 10 cycles exhibits C V characteristics superior to that of Samples 2 and 3 
As evident from a comparison of the capacitance voltage data illustrated in FIGS 5A 5C , { HEAD ~ SRO Sample } 1 , which was formed by depositing { TAIL ~ a unit stack structure } consisting of a single silicon layer and six silicon oxide layers over 10 cycles exhibits C V characteristics superior to that of Samples 2 and 3
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