{HEAD ~ The device} 1 including {TAIL ~ refractory metal silicide layers} formed over said gate electrode layers 
{ HEAD ~ The device } 1 including { TAIL ~ refractory metal silicide layers } formed over said gate electrode layers
HEAD HEAD HEAD HEAD HEAD HEAD OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH