The precursor solution formulation enables the formation of a film having a dielectric constant less than 2.5, mechanical properties sufficient for IMD or PMD layers, and {HEAD ~ minimal levels} of {TAIL ~ metal impurities}  
The precursor solution formulation enables the formation of a film having a dielectric constant less than 2.5 , mechanical properties sufficient for IMD or PMD layers , and { HEAD ~ minimal levels } of { TAIL ~ metal impurities }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH