{HEAD ~ The present invention} is generally related to {TAIL ~ integrated circuit structures}, and more particularly, to a one time programmable Metal Oxide Semiconductor Field Effect Transistor that is programmed by an electromigration mechanism 
{ HEAD ~ The present invention } is generally related to { TAIL ~ integrated circuit structures } , and more particularly , to a one time programmable Metal Oxide Semiconductor Field Effect Transistor that is programmed by an electromigration mechanism
HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH