Thereby, the present invention is suitably used for photonic devices, especially for the process of manufacturing light emitting devices, and is able to increase the stability of {TAIL ~ the manufacturing process} and then the yield, to increase the reliability of bonded semiconductor devices and {HEAD ~ the heat dissipation capability} of bonded semiconductor devices, and to decrease the void formation of the bonding layer 
Thereby , the present invention is suitably used for photonic devices , especially for the process of manufacturing light emitting devices , and is able to increase the stability of { TAIL ~ the manufacturing process } and then the yield , to increase the reliability of bonded semiconductor devices and { HEAD ~ the heat dissipation capability } of bonded semiconductor devices , and to decrease the void formation of the bonding layer
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