{HEAD ~ A semiconductor device} is made by steps of removing portions of a first capping layer, removing portions of a sacrificial layer, recessing {TAIL ~ sidewalls}, and forming fin structures 
{ HEAD ~ A semiconductor device } is made by steps of removing portions of a first capping layer , removing portions of a sacrificial layer , recessing { TAIL ~ sidewalls } , and forming fin structures
HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH