The semiconductor structure further includes a second silicon nitride barrier layer that is defined over {HEAD ~ the oxide material} such that a moisture path barrier is established at the transition edges where {TAIL ~ the first silicon nitride barrier layer} meets the second silicon nitride barrier layer 
The semiconductor structure further includes a second silicon nitride barrier layer that is defined over { HEAD ~ the oxide material } such that a moisture path barrier is established at the transition edges where { TAIL ~ the first silicon nitride barrier layer } meets the second silicon nitride barrier layer
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH