A method of dry plasma etching a semiconductor structure , having at least one semiconductor material layer , on a semiconductor wafer , involving {HEAD ~ a dry plasma reaction gas mixture} being chemically selected for, and having {TAIL ~ an etch rate} corresponding to, each semiconductor material layer ; dividing the semiconductor structure into a masked portion and an unmasked portion ; and sequentially exposing the unmasked portion of the semiconductor structure to the dry plasma reaction gas mixture  
A method of dry plasma etching a semiconductor structure , having at least one semiconductor material layer , on a semiconductor wafer , involving { HEAD ~ a dry plasma reaction gas mixture } being chemically selected for , and having { TAIL ~ an etch rate } corresponding to , each semiconductor material layer ; dividing the semiconductor structure into a masked portion and an unmasked portion ; and sequentially exposing the unmasked portion of the semiconductor structure to the dry plasma reaction gas mixture
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