A capacitor according to {TAIL ~ the present invention} enables {HEAD ~ the HSG layer} to grow on an internal wall of a storage electrode, thereby preventing a micro bridge between storage electrodes resulting from abnormal growth or overgrowth of the HSG layer 
A capacitor according to { TAIL ~ the present invention } enables { HEAD ~ the HSG layer } to grow on an internal wall of a storage electrode , thereby preventing a micro bridge between storage electrodes resulting from abnormal growth or overgrowth of the HSG layer
OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH