doping {HEAD ~ first impurity elements} at {TAIL ~ a first concentration} providing n type into the semiconductor layer using the gate electrode as a mask to form a first n type impurity region 
doping { HEAD ~ first impurity elements } at { TAIL ~ a first concentration } providing n type into the semiconductor layer using the gate electrode as a mask to form a first n type impurity region
OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH