The polishing pad of the present invention is useful for chemical mechanical polishing an insulating film such as an oxide film formed on a semiconductor substrate or a metallic film, and is excellent in flatness of a surface to be polished and evenness of a film thickness after polishing, and also excellent in a polishing rate, and thus excellent in polishing uniformity of {TAIL ~ a material} to be polished such as {HEAD ~ an insulating film}, a metallic film and the like 
The polishing pad of the present invention is useful for chemical mechanical polishing an insulating film such as an oxide film formed on a semiconductor substrate or a metallic film , and is excellent in flatness of a surface to be polished and evenness of a film thickness after polishing , and also excellent in a polishing rate , and thus excellent in polishing uniformity of { TAIL ~ a material } to be polished such as { HEAD ~ an insulating film } , a metallic film and the like
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