It is made possible to conduct writing and erasing {HEAD ~ information} at {TAIL ~ high speed} and with a low gate voltage, attain high integration with reduced power dissipation, and retain information accurately 
It is made possible to conduct writing and erasing { HEAD ~ information } at { TAIL ~ high speed } and with a low gate voltage , attain high integration with reduced power dissipation , and retain information accurately
OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH