{HEAD ~ A silicon substrate} covered with a polycrystalline silicon film is thermally oxidized at {TAIL ~ 900 to 1100° C.} in an oxygen ambient to provide an uneven interface between a thermally oxidized silicon film and the silicon substrate 
is thermally oxidized at
{ HEAD ~ A silicon substrate } covered with a polycrystalline silicon film is thermally oxidized at { TAIL ~ 900 to 1100 ° C. } in an oxygen ambient to provide an uneven interface between a thermally oxidized silicon film and the silicon substrate
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