{HEAD ~ A method} for manufacturing an electron source 1, wherein {TAIL ~ the electron source} comprises a plurality of electron emitting elements, and the relationship 1≧Sout≧4·n·Sact1−Cin is satisfied, where Sact1 is a consumption rate of the gas for each element, and n is a number of elements simultaneously subjected to the step of forming the carbon film 
wherein
{ HEAD ~ A method } for manufacturing an electron source 1 , wherein { TAIL ~ the electron source } comprises a plurality of electron emitting elements , and the relationship 1≧Sout≧4·n·Sact1−Cin is satisfied , where Sact1 is a consumption rate of the gas for each element , and n is a number of elements simultaneously subjected to the step of forming the carbon film
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH