In order to achieve the object, the present inventors have variously examined {HEAD ~ the causes} of the agglomeration and {TAIL ~ a spike defect} occurring in a cobalt silicide layer formed by the epitaxial growth, resulting in finding the following: Thermodynamically, the mechanism for forming cobalt silicide through a reaction between cobalt atoms and silicon atoms is brought by proceeding a reaction, CO2Si→CoSi→CoSi2 
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In order to achieve the object , the present inventors have variously examined { HEAD ~ the causes } of the agglomeration and { TAIL ~ a spike defect } occurring in a cobalt silicide layer formed by the epitaxial growth , resulting in finding the following : Thermodynamically , the mechanism for forming cobalt silicide through a reaction between cobalt atoms and silicon atoms is brought by proceeding a reaction , CO2Si→CoSi→CoSi2
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