In a semiconductor sensor having a membrane structure, {HEAD ~ the destruction} of the membrane caused by {TAIL ~ the expansion} or contraction of a fluid within a hollow part formed under the membrane while the sensor is in use is prevented 
caused by
In a semiconductor sensor having a membrane structure , { HEAD ~ the destruction } of the membrane caused by { TAIL ~ the expansion } or contraction of a fluid within a hollow part formed under the membrane while the sensor is in use is prevented
OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH