In the present embodiment a wet etch process is used that preferentially etches remaining dielectric film 108 b over {HEAD ~ semiconductor} 1 and the other structures formed on {TAIL ~ semiconductor} 1 such as a dilute HF or BOE wet etch solution 
In the present embodiment a wet etch process is used that preferentially etches remaining dielectric film 108 b over { HEAD ~ semiconductor } 1 and the other structures formed on { TAIL ~ semiconductor } 1 such as a dilute HF or BOE wet etch solution
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH