wherein {HEAD ~ the first, second and third semiconductor layers} are formed of {TAIL ~ a non single crystal semiconductor} doped with a dangling bond neutralizer; the first and third semiconductor layers have the same conductivity type; and the second semiconductor layer has a higher resistivity than the first and third semiconductor layers; and 
are formed of
wherein { HEAD ~ the first , second and third semiconductor layers } are formed of { TAIL ~ a non single crystal semiconductor } doped with a dangling bond neutralizer ; the first and third semiconductor layers have the same conductivity type ; and the second semiconductor layer has a higher resistivity than the first and third semiconductor layers ; and
OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH