{HEAD ~ The transistors} from {TAIL ~ the pair} in the first embodiment each also include an associated first gated diode structure comprising an n type semiconductor region proximate to a p type semiconductor region proximate to a p type semiconductor region so as to serve as the first source/drain region of a transistor of the pair 
from
{ HEAD ~ The transistors } from { TAIL ~ the pair } in the first embodiment each also include an associated first gated diode structure comprising an n type semiconductor region proximate to a p type semiconductor region proximate to a p type semiconductor region so as to serve as the first source / drain region of a transistor of the pair
HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH