The thin film transistor 1, wherein {HEAD ~ the channel layer}, a gate insulating film and {TAIL ~ gate electrode} are stacked on and above a substrate in this order 
The thin film transistor 1 , wherein { HEAD ~ the channel layer } , a gate insulating film and { TAIL ~ gate electrode } are stacked on and above a substrate in this order
OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH