A substrate processing method is provided to process a substrate having a structure in which {TAIL ~ a lower photoresist layer}, {HEAD ~ a hard mask layer} containing silicon, and an upper photoresist layer are sequentially formed on a target layer to be processed 
A substrate processing method is provided to process a substrate having a structure in which { TAIL ~ a lower photoresist layer } , { HEAD ~ a hard mask layer } containing silicon , and an upper photoresist layer are sequentially formed on a target layer to be processed
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH