Then, the second cap layer material , the first cap layer material , the gate layer material , {TAIL ~ the dielectric layer material} , the buffer layer material are patterned to form a stacked structure including a buffer layer , a dielectric layer 122, a gate layer 124, {HEAD ~ a first cap layer} 132 and a second cap layer 134 
Then , the second cap layer material , the first cap layer material , the gate layer material , { TAIL ~ the dielectric layer material } , the buffer layer material are patterned to form a stacked structure including a buffer layer , a dielectric layer 122 , a gate layer 124 , { HEAD ~ a first cap layer } 132 and a second cap layer 134
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH