Thus, a semiconductor substrate including {HEAD ~ a recrystallized semiconductor film} having {TAIL ~ removed sub grain boundaries} generated during the zone melting recrystallization, is obtained by fewer process steps than in the prior art 
having
Thus , a semiconductor substrate including { HEAD ~ a recrystallized semiconductor film } having { TAIL ~ removed sub grain boundaries } generated during the zone melting recrystallization , is obtained by fewer process steps than in the prior art
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH