The method comprises providing a gate structure over the semiconductor substrate, wherein {HEAD ~ a dopant material} is implanted at {TAIL ~ an angle} around the gate structure to form a halo structure in a source/drain region of the substrate and underlying a portion of the gate structure 
is implanted at
The method comprises providing a gate structure over the semiconductor substrate , wherein { HEAD ~ a dopant material } is implanted at { TAIL ~ an angle } around the gate structure to form a halo structure in a source / drain region of the substrate and underlying a portion of the gate structure
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