{HEAD ~ The zener diode} is composed of {TAIL ~ a p type doped region} and an n type doped region, wherein one of the doped regions, formed by deep diffusing impurities from a doped polysilicon layer, is arranged between two adjacent well regions 
is composed of
{ HEAD ~ The zener diode } is composed of { TAIL ~ a p type doped region } and an n type doped region , wherein one of the doped regions , formed by deep diffusing impurities from a doped polysilicon layer , is arranged between two adjacent well regions
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