A method 10, wherein the sourceline voltage adjustment amount is predetermined based on {HEAD ~ specifications} of the resistive sense memory cell and {TAIL ~ the transistor} 
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A method 10 , wherein the sourceline voltage adjustment amount is predetermined based on { HEAD ~ specifications } of the resistive sense memory cell and { TAIL ~ the transistor }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL