A field effect device structure comprising a semiconductor p n junction adjacent to an insulated gate electrode is utilized in which a depletion region is created under the gate electrode in the presence of {HEAD ~ alternating forward and reverse biasing} of {TAIL ~ the p n junction} 
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A field effect device structure comprising a semiconductor p n junction adjacent to an insulated gate electrode is utilized in which a depletion region is created under the gate electrode in the presence of { HEAD ~ alternating forward and reverse biasing } of { TAIL ~ the p n junction }
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