The method includes providing {HEAD ~ a substrate} prepared with {TAIL ~ a cell area} and forming first and second gates of first and second transistors in the cell area 
prepared with
The method includes providing { HEAD ~ a substrate } prepared with { TAIL ~ a cell area } and forming first and second gates of first and second transistors in the cell area
OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH