The flow of reactant gases is maintained and the temperature of 425° C. is maintained until {HEAD ~ a desired thickness} of {TAIL ~ borophosphosilicate glass} is formed on the wafer 
of
The flow of reactant gases is maintained and the temperature of 425 ° C. is maintained until { HEAD ~ a desired thickness } of { TAIL ~ borophosphosilicate glass } is formed on the wafer
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH