{HEAD ~ The semiconductor device} 1, wherein {TAIL ~ the first and the second source regions} are N type doped 
wherein
{ HEAD ~ The semiconductor device } 1 , wherein { TAIL ~ the first and the second source regions } are N type doped
HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH