{TAIL ~ A capacitor} according to the present invention enables the HSG layer to grow on {HEAD ~ an internal wall} of a storage electrode, thereby preventing a micro bridge between storage electrodes resulting from abnormal growth or over growth of the HSG layer 
{ TAIL ~ A capacitor } according to the present invention enables the HSG layer to grow on { HEAD ~ an internal wall } of a storage electrode , thereby preventing a micro bridge between storage electrodes resulting from abnormal growth or over growth of the HSG layer
TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH