{TAIL ~ The thin film transistor} 1, wherein the channel layer, {HEAD ~ a gate insulating film} and gate electrode are stacked on and above a substrate in this order 
{ TAIL ~ The thin film transistor } 1 , wherein the channel layer , { HEAD ~ a gate insulating film } and gate electrode are stacked on and above a substrate in this order
TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH