According to a fourth aspect of the present invention, in a semiconductor substrate and a production method thereof, after {HEAD ~ the sub grain boundaries} in {TAIL ~ the first semiconductor film} are inactivated, a further semiconductor film is epitaxially grown on the first semiconductor film 
in
According to a fourth aspect of the present invention , in a semiconductor substrate and a production method thereof , after { HEAD ~ the sub grain boundaries } in { TAIL ~ the first semiconductor film } are inactivated , a further semiconductor film is epitaxially grown on the first semiconductor film
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH