In the above metal compound powder, preferably, compound is not dissociated under the irradiation with a carbon dioxide gas laser, and therefore, {TAIL ~ no adverse influence} is caused on a semiconductor chip and {HEAD ~ the intimate contact capability} of a hole wall 
In the above metal compound powder , preferably , compound is not dissociated under the irradiation with a carbon dioxide gas laser , and therefore , { TAIL ~ no adverse influence } is caused on a semiconductor chip and { HEAD ~ the intimate contact capability } of a hole wall
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