In the flash memory device, a common source line is formed to cross only with {TAIL ~ an isolation layer} adjacent an active region of a normal pattern forming {HEAD ~ memory cells} 
In the flash memory device , a common source line is formed to cross only with { TAIL ~ an isolation layer } adjacent an active region of a normal pattern forming { HEAD ~ memory cells }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD