{HEAD ~ The method} 1, wherein {TAIL ~ the buried layer} is formed with a higher dopant concentration than the semiconductor layer 
wherein
{ HEAD ~ The method } 1 , wherein { TAIL ~ the buried layer } is formed with a higher dopant concentration than the semiconductor layer
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH