Accordingly, stress voltage measurements at 10 V suggest that {HEAD ~ semiconductor devices} fabricated according to the example embodiment of Sample 1 can provide {TAIL ~ a memory window} of greater than 3.2 V 
provide
Accordingly , stress voltage measurements at 10 V suggest that { HEAD ~ semiconductor devices } fabricated according to the example embodiment of Sample 1 can provide { TAIL ~ a memory window } of greater than 3.2 V
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH