Further, during the step of forming {HEAD ~ the second oxide layer}, that is, the dual oxide layer, since no oxide layer remains on the surface of the silicon substrate, {TAIL ~ the thickness} of the oxide layer is controlled regardless of the position on the wafer 
Further , during the step of forming { HEAD ~ the second oxide layer } , that is , the dual oxide layer , since no oxide layer remains on the surface of the silicon substrate , { TAIL ~ the thickness } of the oxide layer is controlled regardless of the position on the wafer
OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH