{HEAD ~ One method} of fabrication of the source and drain regions is to form {TAIL ~ an isolating isolation region} around active areas in which a transistor is to be formed in a semiconductor body 
is to form
{ HEAD ~ One method } of fabrication of the source and drain regions is to form { TAIL ~ an isolating isolation region } around active areas in which a transistor is to be formed in a semiconductor body
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH