Using {HEAD ~ the method} for forming {TAIL ~ the self aligned contact window}, a silicide layer can be easily formed at the peripheral circuit area where a logic circuit is formed and at the cell array region where a memory element is formed 
for forming
Using { HEAD ~ the method } for forming { TAIL ~ the self aligned contact window } , a silicide layer can be easily formed at the peripheral circuit area where a logic circuit is formed and at the cell array region where a memory element is formed
OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH