The reflected radiation intensity of the reflection mask of FIG 11 is improved, when the incidence angle θ and {HEAD ~ the angle Θ} between a normal line to the outermost surface of the pattern 221 and {TAIL ~ a side face} of the pattern 221 are different from each other or when the angle Θ does not meet the requirement of 0≦a|tanθ tanΘ|/T<0.05 after formation of the pattern 221, by applying the absorber 2211 so that reflected radiation may not escape from the right hand side boundary 47 of the pattern 221 
between
The reflected radiation intensity of the reflection mask of FIG 11 is improved , when the incidence angle θ and { HEAD ~ the angle Θ } between a normal line to the outermost surface of the pattern 221 and { TAIL ~ a side face } of the pattern 221 are different from each other or when the angle Θ does not meet the requirement of 0≦a|tanθ tanΘ|/T<0.05 after formation of the pattern 221 , by applying the absorber 2211 so that reflected radiation may not escape from the right hand side boundary 47 of the pattern 221
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH