The apparatus 5, wherein {HEAD ~ each photodiode} comprises a P+ layer doped into {TAIL ~ the bulk semiconductor material} 
The apparatus 5 , wherein { HEAD ~ each photodiode } comprises a P+ layer doped into { TAIL ~ the bulk semiconductor material }
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL