source and drain extension regions of a p type diffusion region formed in said silicon substrate at {HEAD ~ respective lateral sides} of said gate electrode across {TAIL ~ said channel region} 
source and drain extension regions of a p type diffusion region formed in said silicon substrate at { HEAD ~ respective lateral sides } of said gate electrode across { TAIL ~ said channel region }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL