The flow of reactant gases is maintained and {HEAD ~ the temperature} of 425° C. is maintained until {TAIL ~ a desired thickness} of borophosphosilicate glass is formed on the wafer 
is maintained until
The flow of reactant gases is maintained and { HEAD ~ the temperature } of 425 ° C. is maintained until { TAIL ~ a desired thickness } of borophosphosilicate glass is formed on the wafer
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH