When the degree of accumulation in the ideal orientation of is too high, etching develops along {HEAD ~ the crystal lattice} during etching of a rolled plate into a shadow mask and the etched hole is irregular in profile and poor in {TAIL ~ degree} of circularity as shown in FIG 1C 
When the degree of accumulation in the ideal orientation of is too high , etching develops along { HEAD ~ the crystal lattice } during etching of a rolled plate into a shadow mask and the etched hole is irregular in profile and poor in { TAIL ~ degree } of circularity as shown in FIG 1C
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH