{HEAD ~ The methods} include absorbing a first silicon source gas onto the substrate, oxidizing the first absorbed layer to form a silicon oxide layer, absorbing {TAIL ~ a second silicon source gas} onto the substrate and reducing the second absorbed layer to form a silicon layer 
include absorbing
{ HEAD ~ The methods } include absorbing a first silicon source gas onto the substrate , oxidizing the first absorbed layer to form a silicon oxide layer , absorbing { TAIL ~ a second silicon source gas } onto the substrate and reducing the second absorbed layer to form a silicon layer
HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH