A substrate processing method is provided to process a substrate having a structure in which a lower photoresist layer, a hard mask layer containing silicon, and {HEAD ~ an upper photoresist layer} are sequentially formed on {TAIL ~ a target layer} to be processed 
are sequentially formed on
A substrate processing method is provided to process a substrate having a structure in which a lower photoresist layer , a hard mask layer containing silicon , and { HEAD ~ an upper photoresist layer } are sequentially formed on { TAIL ~ a target layer } to be processed
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH