{HEAD ~ Photopolymerization} of {TAIL ~ the low conductivity polymer films} of the present invention is useful in the formation of polymer resist/masks for microcircuit photolithography where high resolution patterned lines can be achieved by argon ion laser or electron beam exposure of the microcircuit patterns 
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{ HEAD ~ Photopolymerization } of { TAIL ~ the low conductivity polymer films } of the present invention is useful in the formation of polymer resist / masks for microcircuit photolithography where high resolution patterned lines can be achieved by argon ion laser or electron beam exposure of the microcircuit patterns
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