Therefore, the method provides structures for i) an insulating film of an NDRO type ferroelectric memory device that has a structure of Metal film/Ferroelectric film/Insulating film/Silicon, {HEAD ~ ii) a gate oxide film} substituting for {TAIL ~ silicon oxide film}, and iii) an insulating film of Electro Luminescent Display device 
substituting for
Therefore , the method provides structures for i ) an insulating film of an NDRO type ferroelectric memory device that has a structure of Metal film / Ferroelectric film / Insulating film / Silicon , { HEAD ~ ii ) a gate oxide film } substituting for { TAIL ~ silicon oxide film } , and iii ) an insulating film of Electro Luminescent Display device
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH