The method comprises providing a gate structure over the semiconductor substrate, wherein a dopant material is implanted at an angle around {HEAD ~ the gate structure} to form {TAIL ~ a halo structure} in a source/drain region of the substrate and underlying a portion of the gate structure 
to form
The method comprises providing a gate structure over the semiconductor substrate , wherein a dopant material is implanted at an angle around { HEAD ~ the gate structure } to form { TAIL ~ a halo structure } in a source / drain region of the substrate and underlying a portion of the gate structure
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH