FIG 3C shows the semiconductor device of FIG 3B after a silicon nitride layer 118 has been deposited over oxide layer 116 and {TAIL ~ the topographical edge} 113 of {HEAD ~ hard mask} 202 
FIG 3C shows the semiconductor device of FIG 3B after a silicon nitride layer 118 has been deposited over oxide layer 116 and { TAIL ~ the topographical edge } 113 of { HEAD ~ hard mask } 202
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH