{HEAD ~ The second array} of bitlines and {TAIL ~ channel regions} is orthogonally disposed relative to the wordline array and the second array of bitlines is formed in a storage plane over an interpolysilicon oxide dielectric isolation layer 
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{ HEAD ~ The second array } of bitlines and { TAIL ~ channel regions } is orthogonally disposed relative to the wordline array and the second array of bitlines is formed in a storage plane over an interpolysilicon oxide dielectric isolation layer
HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH