Thus, {TAIL ~ a semiconductor substrate} including a recrystallized semiconductor film having removed sub grain boundaries generated during the zone melting recrystallization, is obtained by fewer process steps than in {HEAD ~ the prior art} 
Thus , { TAIL ~ a semiconductor substrate } including a recrystallized semiconductor film having removed sub grain boundaries generated during the zone melting recrystallization , is obtained by fewer process steps than in { HEAD ~ the prior art }
OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD