After the second metal layer 25 is partially etched to form a gate electrode 20 g, the first metal layer 23 is partially etched to form source/drain electrodes 20 s, 20 d in {HEAD ~ a region} corresponding to {TAIL ~ the gate electrode} 20 g 
corresponding to
After the second metal layer 25 is partially etched to form a gate electrode 20 g , the first metal layer 23 is partially etched to form source / drain electrodes 20 s , 20 d in { HEAD ~ a region } corresponding to { TAIL ~ the gate electrode } 20 g
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH