forming a tunnel dielectric layer overlying {HEAD ~ the carbon nanotubes} and adjoining {TAIL ~ the semiconductor substrate} in the at least one portion of the semiconductor substrate within the plurality of carbon nanotubes 
forming a tunnel dielectric layer overlying { HEAD ~ the carbon nanotubes } and adjoining { TAIL ~ the semiconductor substrate } in the at least one portion of the semiconductor substrate within the plurality of carbon nanotubes
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH