The illustrative embodiments provide a design structure for actively biasing field effect transistors in {HEAD ~ a loop filter} in {TAIL ~ an integrated phase lock loop circuit} to form precision integrated resistors having a reduced area and improved high frequency capability 
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The illustrative embodiments provide a design structure for actively biasing field effect transistors in { HEAD ~ a loop filter } in { TAIL ~ an integrated phase lock loop circuit } to form precision integrated resistors having a reduced area and improved high frequency capability
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