{HEAD ~ The damage layer} is formed on {TAIL ~ the silicon substrate} by dry etching a designated part of the silicon substrate, and the dual oxide layer is formed by using the properties of SiO2 by which the oxide layer growth speed on the damage layer is slower than that on the silicon substrate 
is formed on
{ HEAD ~ The damage layer } is formed on { TAIL ~ the silicon substrate } by dry etching a designated part of the silicon substrate , and the dual oxide layer is formed by using the properties of SiO2 by which the oxide layer growth speed on the damage layer is slower than that on the silicon substrate
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