In view of the above, the present invention is characterized in that in a manufacturing process of semiconductor devices integrated on a single substrate, laser light is selectively applied to the substrate at {HEAD ~ different illumination energies} that are determined in {TAIL ~ accordance} with required semiconductor characteristics 
are determined in
In view of the above , the present invention is characterized in that in a manufacturing process of semiconductor devices integrated on a single substrate , laser light is selectively applied to the substrate at { HEAD ~ different illumination energies } that are determined in { TAIL ~ accordance } with required semiconductor characteristics
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