{TAIL ~ The method} of forming a dual oxide layer 1, wherein said removing of one portion of the nitride layer comprises depositing a photoresist on the nitride layer, and exposing the photoresist to light and developing {HEAD ~ the photoresist} 
{ TAIL ~ The method } of forming a dual oxide layer 1 , wherein said removing of one portion of the nitride layer comprises depositing a photoresist on the nitride layer , and exposing the photoresist to light and developing { HEAD ~ the photoresist }
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