{TAIL ~ The method} 1, wherein {HEAD ~ the buried layer} is formed with a higher dopant concentration than the semiconductor layer 
{ TAIL ~ The method } 1 , wherein { HEAD ~ the buried layer } is formed with a higher dopant concentration than the semiconductor layer
TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH