In the second diffused region, a distribution in a depth direction of carriers has a profile in which {HEAD ~ the concentration} is {TAIL ~ more than 5×1018 cm} 3 at the peak and is in correspondence with a carrier concentration of the semiconductor substrate at a depth less than 0.04 μm 
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In the second diffused region , a distribution in a depth direction of carriers has a profile in which { HEAD ~ the concentration } is { TAIL ~ more than 5×1018 cm } 3 at the peak and is in correspondence with a carrier concentration of the semiconductor substrate at a depth less than 0.04 μm
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH