It is {HEAD ~ an object} of {TAIL ~ the present invention} to provide a process for forming a MOS semiconductor device having an LDD structure which is suitable for a VLSI , and in which the above described disadvantages of the conventional techniques are overcome 
of
It is { HEAD ~ an object } of { TAIL ~ the present invention } to provide a process for forming a MOS semiconductor device having an LDD structure which is suitable for a VLSI , and in which the above described disadvantages of the conventional techniques are overcome
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