The invention is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate, a method of forming DRAM circuitry, DRAM circuitry, a method of forming {HEAD ~ a field emission device}, and {TAIL ~ a field emission device} 
The invention is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate , a method of forming DRAM circuitry , DRAM circuitry , a method of forming { HEAD ~ a field emission device } , and { TAIL ~ a field emission device }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL