The method includes applying {HEAD ~ a first gate voltage} across a gate of the semiconductor transistor 22 to allow the first voltage to form a first write current first time duration from the sourceline SL to the bitline BL and writing {TAIL ~ a first data state} to the resistive sense memory cell 10 
The method includes applying { HEAD ~ a first gate voltage } across a gate of the semiconductor transistor 22 to allow the first voltage to form a first write current first time duration from the sourceline SL to the bitline BL and writing { TAIL ~ a first data state } to the resistive sense memory cell 10
OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH