The method includes providing a substrate prepared with a cell area and forming first and second gates of {HEAD ~ first and second transistors} in {TAIL ~ the cell area} 
in
The method includes providing a substrate prepared with a cell area and forming first and second gates of { HEAD ~ first and second transistors } in { TAIL ~ the cell area }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL