A drain region is formed at {HEAD ~ the face} to be of {TAIL ~ the second conductivity type} and to adjoin the drift region, and to be spaced from the IGFET body 
to be of
A drain region is formed at { HEAD ~ the face } to be of { TAIL ~ the second conductivity type } and to adjoin the drift region , and to be spaced from the IGFET body
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH