{TAIL ~ A field effect device structure} comprising a semiconductor p n junction adjacent to an insulated gate electrode is utilized in which a depletion region is created under the gate electrode in {HEAD ~ the presence} of alternating forward and reverse biasing of the p n junction 
{ TAIL ~ A field effect device structure } comprising a semiconductor p n junction adjacent to an insulated gate electrode is utilized in which a depletion region is created under the gate electrode in { HEAD ~ the presence } of alternating forward and reverse biasing of the p n junction
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