The invention is a method of depositing an aluminum nitride comprising layer over {HEAD ~ a semiconductor substrate}, {TAIL ~ a method} of forming DRAM circuitry, DRAM circuitry, a method of forming a field emission device, and a field emission device 
The invention is a method of depositing an aluminum nitride comprising layer over { HEAD ~ a semiconductor substrate } , { TAIL ~ a method } of forming DRAM circuitry , DRAM circuitry , a method of forming a field emission device , and a field emission device
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