This is achieved by employing bistertiarybutylaminesilane as {HEAD ~ a silicon source} to react with an oxidizing agent to form a dielectric film on a substrate that includes {TAIL ~ silicon} 
This is achieved by employing bistertiarybutylaminesilane as { HEAD ~ a silicon source } to react with an oxidizing agent to form a dielectric film on a substrate that includes { TAIL ~ silicon }
OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL