{TAIL ~ All} of the layers are successively grown by a vapor phase epitaxial process wherein the lattice constant of {HEAD ~ the GaInAs layer} is larger than that of the InP layer at room temperature 
{ TAIL ~ All } of the layers are successively grown by a vapor phase epitaxial process wherein the lattice constant of { HEAD ~ the GaInAs layer } is larger than that of the InP layer at room temperature
TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH