Source and drain regions of field effect transistors are fabricated with an electrically insulating layer formed thereunder so as to reduce junction capacitance between each and {TAIL ~ a semiconductor body} in which {HEAD ~ the regions} are formed 
in are formed
Source and drain regions of field effect transistors are fabricated with an electrically insulating layer formed thereunder so as to reduce junction capacitance between each and { TAIL ~ a semiconductor body } in which { HEAD ~ the regions } are formed
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL REL OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL