{TAIL ~ A photolithographic method} wherein a mask is made by pattern exposing and developing a o quinone diazide sensitized phenol formaldehyde resist layer, the formed resist mask then being used directly as {HEAD ~ an exposure mask} for a layer of deep ultraviolet sensitive resist such as an alkyl methacrylate resist 
{ TAIL ~ A photolithographic method } wherein a mask is made by pattern exposing and developing a o quinone diazide sensitized phenol formaldehyde resist layer , the formed resist mask then being used directly as { HEAD ~ an exposure mask } for a layer of deep ultraviolet sensitive resist such as an alkyl methacrylate resist
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