In this way, the depth and concentration of the selectively doped silicon material layer may be controlled, while {HEAD ~ the underlying intrinsic silicon layer} limits {TAIL ~ source/drain conduction} to the substrate surface above the halo 
limits
In this way , the depth and concentration of the selectively doped silicon material layer may be controlled , while { HEAD ~ the underlying intrinsic silicon layer } limits { TAIL ~ source / drain conduction } to the substrate surface above the halo
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH