A thin film polysilicon storage plane is formed over the gate oxide layer with a second array of alternating parallel bitlines and {HEAD ~ channel regions} formed in {TAIL ~ the thin film polysilicon storage plane} 
formed in
A thin film polysilicon storage plane is formed over the gate oxide layer with a second array of alternating parallel bitlines and { HEAD ~ channel regions } formed in { TAIL ~ the thin film polysilicon storage plane }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL