{HEAD ~ a first blocking layer} formed on {TAIL ~ the conductive substrate}, the first blocking layer being formed of amorphous silicon carbide or amorphous silicon nitride, and containing 1×10 4 to 1.0 atomic % of an element of Group III or V of the Periodic Table 
formed on
{ HEAD ~ a first blocking layer } formed on { TAIL ~ the conductive substrate } , the first blocking layer being formed of amorphous silicon carbide or amorphous silicon nitride , and containing 1×10 4 to 1.0 atomic % of an element of Group III or V of the Periodic Table
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH