Then {HEAD ~ the antireflection film} 7 of silicon nitride having a thickness of 1.8 μm is formed on the exposed surface of the P+ type region 6 by {TAIL ~ plasma CVD} 
is formed by
Then { HEAD ~ the antireflection film } 7 of silicon nitride having a thickness of 1.8 μm is formed on the exposed surface of the P+ type region 6 by { TAIL ~ plasma CVD }
OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL REL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL