{HEAD ~ A capacitor} according to the present invention enables {TAIL ~ the HSG layer} to grow on an internal wall of a storage electrode, thereby preventing a micro bridge between storage electrodes resulting from abnormal growth or overgrowth of the HSG layer 
enables
{ HEAD ~ A capacitor } according to the present invention enables { TAIL ~ the HSG layer } to grow on an internal wall of a storage electrode , thereby preventing a micro bridge between storage electrodes resulting from abnormal growth or overgrowth of the HSG layer
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH