A GaN transitional layer is grown on the 3D nucleation layer by HVPE under {HEAD ~ a condition} that changes {TAIL ~ the growth mode} from the substantially 3D growth mode to a substantially 2D growth mode 
changes
A GaN transitional layer is grown on the 3D nucleation layer by HVPE under { HEAD ~ a condition } that changes { TAIL ~ the growth mode } from the substantially 3D growth mode to a substantially 2D growth mode
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH