It is {TAIL ~ an object} of the present invention to provide a process for forming a MOS semiconductor device having an LDD structure which is suitable for a VLSI , and in which {HEAD ~ the above described disadvantages} of the conventional techniques are overcome 
It is { TAIL ~ an object } of the present invention to provide a process for forming a MOS semiconductor device having an LDD structure which is suitable for a VLSI , and in which { HEAD ~ the above described disadvantages } of the conventional techniques are overcome
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