Subsequently, a mask 70, for example a photoresist mask, which comprises an opening 72 in the area of {TAIL ~ the coil trace} 10, is formed on the surface 62 of {HEAD ~ the dielectric layer} 60 
Subsequently , a mask 70 , for example a photoresist mask , which comprises an opening 72 in the area of { TAIL ~ the coil trace } 10 , is formed on the surface 62 of { HEAD ~ the dielectric layer } 60
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH