The nitride semiconductor wafer 1, wherein Δθ varies non continuously within {HEAD ~ an angular range} of greater than 0.05° and {TAIL ~ less than 1°} 
of
The nitride semiconductor wafer 1 , wherein Δθ varies non continuously within { HEAD ~ an angular range } of greater than 0.05 ° and { TAIL ~ less than 1 ° }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL