The inorganic insulating layer 35 on the gate electrode 20 g functions as {TAIL ~ a gate} insulating {HEAD ~ film} 30, and the semiconductor layer 40 between the source/drain electrodes 20 s, 20 d on the inorganic insulating layer 35 functions as a channel 
The inorganic insulating layer 35 on the gate electrode 20 g functions as { TAIL ~ a gate } insulating { HEAD ~ film } 30 , and the semiconductor layer 40 between the source / drain electrodes 20 s , 20 d on the inorganic insulating layer 35 functions as a channel
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH