The present invention relates generally to semiconductor memory devices, and in particular, the present invention relates to {HEAD ~ floating gate memory devices} having {TAIL ~ carbon nanotubes} 
having
The present invention relates generally to semiconductor memory devices , and in particular , the present invention relates to { HEAD ~ floating gate memory devices } having { TAIL ~ carbon nanotubes }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL