The precursor solution formulation enables the formation of a film having {HEAD ~ a dielectric constant} less than 2.5, mechanical properties sufficient for IMD or PMD layers, and {TAIL ~ minimal levels} of metal impurities  
The precursor solution formulation enables the formation of a film having { HEAD ~ a dielectric constant } less than 2.5 , mechanical properties sufficient for IMD or PMD layers , and { TAIL ~ minimal levels } of metal impurities
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH