According to the method, a gate stack is formed on {HEAD ~ a semiconductor substrate}, and impurity ions are implanted at a predetermined angle to form {TAIL ~ a source/drain junction} in the semiconductor substrate 
According to the method , a gate stack is formed on { HEAD ~ a semiconductor substrate } , and impurity ions are implanted at a predetermined angle to form { TAIL ~ a source / drain junction } in the semiconductor substrate
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH