The enhanced doping concentration of the JFET gate region with respect to the semiconductor layer allows the dopant concentration of the drift region to likewise be increased, thereby allowing {HEAD ~ RESURF conditions} to be met at {TAIL ~ the rated voltage} and with a lower rds  
to be met at
The enhanced doping concentration of the JFET gate region with respect to the semiconductor layer allows the dopant concentration of the drift region to likewise be increased , thereby allowing { HEAD ~ RESURF conditions } to be met at { TAIL ~ the rated voltage } and with a lower rds
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH