wherein {HEAD ~ the first interfacial structure} is formed with {TAIL ~ a metal layer} and a capping layer comprising SiN and the second interfacial structure is formed with a metal layer in a same process as the metal layer of the first interfacial structure and a capping layer comprising one of: Co, Ru, Ir, Rh and Pt 
is formed with
wherein { HEAD ~ the first interfacial structure } is formed with { TAIL ~ a metal layer } and a capping layer comprising SiN and the second interfacial structure is formed with a metal layer in a same process as the metal layer of the first interfacial structure and a capping layer comprising one of : Co , Ru , Ir , Rh and Pt
OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH