The oscillator 1, wherein {HEAD ~ the insulating layer} is an oxide, a nitride or {TAIL ~ an oxynitride} containing at least one element selected from the group consisting of Al, Hf, Zr, Ti, Ta, Mo, W, Nb and Si 
is
The oscillator 1 , wherein { HEAD ~ the insulating layer } is an oxide , a nitride or { TAIL ~ an oxynitride } containing at least one element selected from the group consisting of Al , Hf , Zr , Ti , Ta , Mo , W , Nb and Si
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH