In the present invention, the oxide layer is used not due to the dielectric properties, but the easy formation and low cost for {TAIL ~ the oxide layer} to form a template pattern using {HEAD ~ a semiconductor manufacturing process} 
In the present invention , the oxide layer is used not due to the dielectric properties , but the easy formation and low cost for { TAIL ~ the oxide layer } to form a template pattern using { HEAD ~ a semiconductor manufacturing process }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD