{HEAD ~ One specific embodiment} of the invention is {TAIL ~ a flash memory} that presumes charge loss in the memory cells and programs the threshold voltage of a memory cell up to the next allowed state when the memory detects that the threshold voltage of the memory cell is in a forbidden zone 
is
{ HEAD ~ One specific embodiment } of the invention is { TAIL ~ a flash memory } that presumes charge loss in the memory cells and programs the threshold voltage of a memory cell up to the next allowed state when the memory detects that the threshold voltage of the memory cell is in a forbidden zone
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