Referring to FIG 2G, a storage electrode 124 is formed on {HEAD ~ the overall surface} of {TAIL ~ the semiconductor substrate} 100 including the trench 122, the storage electrode composed of polysilicon doped with conductive impurities 
of
Referring to FIG 2 G , a storage electrode 124 is formed on { HEAD ~ the overall surface } of { TAIL ~ the semiconductor substrate } 100 including the trench 122 , the storage electrode composed of polysilicon doped with conductive impurities
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH