As described above, the preferred thickness of silicon nitride layer 118 may vary depending on the particular integrated circuit application being designed, however, in a preferred 0.25 micron process technology application, {TAIL ~ the thickness} of silicon nitride layer 118 may be between {HEAD ~ about 3,000 angstroms} and about 15,000 angstroms, and most preferably about 6,000 angstroms 
As described above , the preferred thickness of silicon nitride layer 118 may vary depending on the particular integrated circuit application being designed , however , in a preferred 0.25 micron process technology application , { TAIL ~ the thickness } of silicon nitride layer 118 may be between { HEAD ~ about 3,000 angstroms } and about 15,000 angstroms , and most preferably about 6,000 angstroms
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