{HEAD ~ The invention} is {TAIL ~ a method} of depositing an aluminum nitride comprising layer over a semiconductor substrate, a method of forming DRAM circuitry, DRAM circuitry, a method of forming a field emission device, and a field emission device 
is
{ HEAD ~ The invention } is { TAIL ~ a method } of depositing an aluminum nitride comprising layer over a semiconductor substrate , a method of forming DRAM circuitry , DRAM circuitry , a method of forming a field emission device , and a field emission device
HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH