The method comprises providing a gate structure over the semiconductor substrate, wherein a dopant material is implanted at an angle around the gate structure to form a halo structure in a source/drain region of the substrate and underlying {HEAD ~ a portion} of {TAIL ~ the gate structure} 
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The method comprises providing a gate structure over the semiconductor substrate , wherein a dopant material is implanted at an angle around the gate structure to form a halo structure in a source / drain region of the substrate and underlying { HEAD ~ a portion } of { TAIL ~ the gate structure }
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