Although {TAIL ~ the invention} has been described with respect to {HEAD ~ an n channel MNOSFET}, it will be clear to those skilled in the art that the same phenomenon will occur in p channel devices as well as devices having single gate dielectric layers, although the observable effects may be of smaller magnitude 
Although { TAIL ~ the invention } has been described with respect to { HEAD ~ an n channel MNOSFET } , it will be clear to those skilled in the art that the same phenomenon will occur in p channel devices as well as devices having single gate dielectric layers , although the observable effects may be of smaller magnitude
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