At this time, a decreasing step is performed with a step for removing an impurity concentrating film on the surface of {HEAD ~ a silicon wafer}, such as an oxide film, depending on {TAIL ~ the surface state} of the silicon water 
depending on
At this time , a decreasing step is performed with a step for removing an impurity concentrating film on the surface of { HEAD ~ a silicon wafer } , such as an oxide film , depending on { TAIL ~ the surface state } of the silicon water
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH