The oscillator 1, wherein the insulating layer is an oxide, a nitride or an oxynitride containing at least one element selected from {HEAD ~ the group} consisting of Al, Hf, Zr, Ti, Ta, Mo, W, Nb and {TAIL ~ Si} 
consisting of
The oscillator 1 , wherein the insulating layer is an oxide , a nitride or an oxynitride containing at least one element selected from { HEAD ~ the group } consisting of Al , Hf , Zr , Ti , Ta , Mo , W , Nb and { TAIL ~ Si }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL