Moreover, the capacitor dielectric layer 122 can have a thickness in {HEAD ~ the range} of {TAIL ~ 500 Angstroms} to 1,000 Angstroms, and the dielectric layer can be a layer of silicon oxide formed by chemical vapor deposition, silicon nitride formed by chemical vapor deposition, or tantalum oxide formed by physical vapor deposition 
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Moreover , the capacitor dielectric layer 122 can have a thickness in { HEAD ~ the range } of { TAIL ~ 500 Angstroms } to 1,000 Angstroms , and the dielectric layer can be a layer of silicon oxide formed by chemical vapor deposition , silicon nitride formed by chemical vapor deposition , or tantalum oxide formed by physical vapor deposition
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH