This is achieved by employing bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form {HEAD ~ a dielectric film} on {TAIL ~ a substrate} that includes silicon 
on
This is achieved by employing bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form { HEAD ~ a dielectric film } on { TAIL ~ a substrate } that includes silicon
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH