In preferred embodiments, {HEAD ~ a semiconductor surface potential barrier} is measured after {TAIL ~ corona} charging both before and after annealing 
is measured after
In preferred embodiments , { HEAD ~ a semiconductor surface potential barrier } is measured after { TAIL ~ corona } charging both before and after annealing
OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH