The transistors from {TAIL ~ the pair} in the first embodiment each also include an associated first gated diode structure comprising {HEAD ~ an n type semiconductor region} proximate to a p type semiconductor region proximate to a p type semiconductor region so as to serve as the first source/drain region of a transistor of the pair 
The transistors from { TAIL ~ the pair } in the first embodiment each also include an associated first gated diode structure comprising { HEAD ~ an n type semiconductor region } proximate to a p type semiconductor region proximate to a p type semiconductor region so as to serve as the first source / drain region of a transistor of the pair
OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH