In a method for making {TAIL ~ a GaN article}, {HEAD ~ an epitaxial nitride layer} is deposited on a single crystal substrate 
In a method for making { TAIL ~ a GaN article } , { HEAD ~ an epitaxial nitride layer } is deposited on a single crystal substrate
OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH