The method of the present invention is illustrated in FIGS 1A 1K, and begins with {TAIL ~ a semiconductor substrate} 10, which is preferably of {HEAD ~ P type} and is well known in the art 
The method of the present invention is illustrated in FIGS 1A 1 K , and begins with { TAIL ~ a semiconductor substrate } 10 , which is preferably of { HEAD ~ P type } and is well known in the art
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH