More specifically, the present invention relates to {HEAD ~ an IGBT} with reduced channel length or {TAIL ~ deeper enhanced concentration region} that improves Vce,on and that improves switching power loss 
with
More specifically , the present invention relates to { HEAD ~ an IGBT } with reduced channel length or { TAIL ~ deeper enhanced concentration region } that improves Vce , on and that improves switching power loss
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH