According to the method, a gate stack is formed on a semiconductor substrate, and impurity ions are implanted at {HEAD ~ a predetermined angle} to form {TAIL ~ a source/drain junction} in the semiconductor substrate 
to form
According to the method , a gate stack is formed on a semiconductor substrate , and impurity ions are implanted at { HEAD ~ a predetermined angle } to form { TAIL ~ a source / drain junction } in the semiconductor substrate
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH