More particularly, {TAIL ~ embodiments} of the present invention relate to {HEAD ~ methods} of fabricating gated lateral thyristor based random access memory devices used in semiconductor memory devices, and to memory cell structures and memory devices which implement such GLTRAM devices 
More particularly , { TAIL ~ embodiments } of the present invention relate to { HEAD ~ methods } of fabricating gated lateral thyristor based random access memory devices used in semiconductor memory devices , and to memory cell structures and memory devices which implement such GLTRAM devices
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