{HEAD ~ a gate electrode} formed over said silicon substrate in correspondence to said channel region via a gate insulation film, said gate electrode carrying {TAIL ~ sidewall insulation films} on respective, mutually opposite sidewall surfaces thereof 
{ HEAD ~ a gate electrode } formed over said silicon substrate in correspondence to said channel region via a gate insulation film , said gate electrode carrying { TAIL ~ sidewall insulation films } on respective , mutually opposite sidewall surfaces thereof
HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH