Meanwhile, using the nitride layer, after depositing the silicon nitride to {HEAD ~ a thickness} of {TAIL ~ about 10 to about 100 Å} on the silicon substrate, a pattern of the silicon nitride layer is defined by photolithography and the silicon nitride layer is partially removed depending on the pattern 
of
Meanwhile , using the nitride layer , after depositing the silicon nitride to { HEAD ~ a thickness } of { TAIL ~ about 10 to about 100 Å } on the silicon substrate , a pattern of the silicon nitride layer is defined by photolithography and the silicon nitride layer is partially removed depending on the pattern
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH