Photopolymerization of the low conductivity polymer films of the present invention is useful in the formation of polymer resist/masks for microcircuit photolithography where {HEAD ~ high resolution} patterned {TAIL ~ lines} can be achieved by argon ion laser or electron beam exposure of the microcircuit patterns 
patterned
Photopolymerization of the low conductivity polymer films of the present invention is useful in the formation of polymer resist / masks for microcircuit photolithography where { HEAD ~ high resolution } patterned { TAIL ~ lines } can be achieved by argon ion laser or electron beam exposure of the microcircuit patterns
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