In fabrication of a semiconductor device, firstly an isolation trench is formed on a substrate to isolate a plurality of semiconductor elements, and then a thermal oxide film is formed on a sidewall of the trench, whereupon {HEAD ~ a silicon oxide film} is formed on the substrate by {TAIL ~ chemical vapor deposition} 
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In fabrication of a semiconductor device , firstly an isolation trench is formed on a substrate to isolate a plurality of semiconductor elements , and then a thermal oxide film is formed on a sidewall of the trench , whereupon { HEAD ~ a silicon oxide film } is formed on the substrate by { TAIL ~ chemical vapor deposition }
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