Form over a substrate the combination of a gate oxide layer and {HEAD ~ a gate layer} patterned into gate stacks with sidewalls for an NMOS FET device over a P well in {TAIL ~ the substrate} and a PMOS FET device over an N well 
Form over a substrate the combination of a gate oxide layer and { HEAD ~ a gate layer } patterned into gate stacks with sidewalls for an NMOS FET device over a P well in { TAIL ~ the substrate } and a PMOS FET device over an N well
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH