Single event upset hardening is provided in a static random access memory cell, including cross coupled inverters, by the restoration of voltages at {HEAD ~ selected nodes} within {TAIL ~ the cell} by a pair of transistors connected to the cross coupling between inverters 
within
Single event upset hardening is provided in a static random access memory cell , including cross coupled inverters , by the restoration of voltages at { HEAD ~ selected nodes } within { TAIL ~ the cell } by a pair of transistors connected to the cross coupling between inverters
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH