In the present invention, the oxide layer is used not due to the dielectric properties, but the easy formation and low cost for the oxide layer to form {HEAD ~ a template pattern} using {TAIL ~ a semiconductor manufacturing process} 
using
In the present invention , the oxide layer is used not due to the dielectric properties , but the easy formation and low cost for the oxide layer to form { HEAD ~ a template pattern } using { TAIL ~ a semiconductor manufacturing process }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL