A second ion implantation is carried out under the conditions of {TAIL ~ a concentration} of about 5.0×1015 ions/cm2 and an acceleration energy of about 40 KeV using As+ ions serving as {HEAD ~ carriers} 
A second ion implantation is carried out under the conditions of { TAIL ~ a concentration } of about 5.0×1015 ions / cm2 and an acceleration energy of about 40 KeV using As+ ions serving as { HEAD ~ carriers }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD