forming a via hole through the second silicon nitride layer, the applied oxide material and the first silicon nitride layer down to the underlying metallization line, the via {TAIL ~ hole} having walls that are substantially adjacent to {HEAD ~ the moisture repelling barrier} 
forming a via hole through the second silicon nitride layer , the applied oxide material and the first silicon nitride layer down to the underlying metallization line , the via { TAIL ~ hole } having walls that are substantially adjacent to { HEAD ~ the moisture repelling barrier }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD