According to {TAIL ~ the method}, a gate stack is formed on a semiconductor substrate, and {HEAD ~ impurity ions} are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate 
According to
According to { TAIL ~ the method } , a gate stack is formed on a semiconductor substrate , and { HEAD ~ impurity ions } are implanted at a predetermined angle to form a source / drain junction in the semiconductor substrate
REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH