with respect to the p channel MOS and by silicate glass, such as AsSG, PSG, etc., with respect to the n channel MOS to implement a high temperature and short time {HEAD ~ heat process} by using {TAIL ~ the RTA process} to thereby carry out solid phase diffusion from the side walls to form a diffused layer shallower than a diffused layer by ion implantation and RTA 
by using
with respect to the p channel MOS and by silicate glass , such as AsSG , PSG , etc . , with respect to the n channel MOS to implement a high temperature and short time { HEAD ~ heat process } by using { TAIL ~ the RTA process } to thereby carry out solid phase diffusion from the side walls to form a diffused layer shallower than a diffused layer by ion implantation and RTA
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