The semiconductor device manufacturing method 1, wherein the under bump layer is formed from one of a single film and a laminate of a plurality of films made of one selected from a group consisting of {TAIL ~ nickel}, nickel alloy, {HEAD ~ copper} and copper alloy which are formed by sputtering 
The semiconductor device manufacturing method 1 , wherein the under bump layer is formed from one of a single film and a laminate of a plurality of films made of one selected from a group consisting of { TAIL ~ nickel } , nickel alloy , { HEAD ~ copper } and copper alloy which are formed by sputtering
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