The method of forming a dual oxide layer 1, wherein said removing of {TAIL ~ one portion} of the nitride layer comprises depositing a photoresist on the nitride layer, and exposing the photoresist to {HEAD ~ light} and developing the photoresist 
The method of forming a dual oxide layer 1 , wherein said removing of { TAIL ~ one portion } of the nitride layer comprises depositing a photoresist on the nitride layer , and exposing the photoresist to { HEAD ~ light } and developing the photoresist
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