The semiconductor process 1, wherein {HEAD ~ the sidewalls} of {TAIL ~ the second cap layer} are entirely exposed as the spacer material is etched 
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The semiconductor process 1 , wherein { HEAD ~ the sidewalls } of { TAIL ~ the second cap layer } are entirely exposed as the spacer material is etched
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH