{HEAD ~ A buried layer} with {TAIL ~ doping} of a second conductivity type is formed in a first region of the semiconductor layer, wherein the buried layer is produced at the junction between the semiconductor layer and semiconductor substrate 
with
{ HEAD ~ A buried layer } with { TAIL ~ doping } of a second conductivity type is formed in a first region of the semiconductor layer , wherein the buried layer is produced at the junction between the semiconductor layer and semiconductor substrate
HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH