As described above, in {TAIL ~ the semiconductor memory device} according to {HEAD ~ the present invention}, by forming the respective impurity areas in the semiconductor substrate, the fabrication of the semiconductor memory device having an LDD construction can be achieved 
As described above , in { TAIL ~ the semiconductor memory device } according to { HEAD ~ the present invention } , by forming the respective impurity areas in the semiconductor substrate , the fabrication of the semiconductor memory device having an LDD construction can be achieved
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