Advantages of the present invention include selective etching of {HEAD ~ multiple semiconductor material layers} without {TAIL ~ a prematurely self} terminating etching step and eliminating any potential over etching of the multilayer semiconductor structure 
without
Advantages of the present invention include selective etching of { HEAD ~ multiple semiconductor material layers } without { TAIL ~ a prematurely self } terminating etching step and eliminating any potential over etching of the multilayer semiconductor structure
OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH