More specifically, the present invention relates to {HEAD ~ an IGBT} with {TAIL ~ reduced channel length} or deeper enhanced concentration region that improves Vce,on and that improves switching power loss 
with
More specifically , the present invention relates to { HEAD ~ an IGBT } with { TAIL ~ reduced channel length } or deeper enhanced concentration region that improves Vce , on and that improves switching power loss
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH