wherein {TAIL ~ the first interfacial structure} is formed with a metal layer and {HEAD ~ a capping layer} comprising SiN and the second interfacial structure is formed with a metal layer in a same process as the metal layer of the first interfacial structure and a capping layer comprising one of: Co, Ru, Ir, Rh and Pt 
wherein { TAIL ~ the first interfacial structure } is formed with a metal layer and { HEAD ~ a capping layer } comprising SiN and the second interfacial structure is formed with a metal layer in a same process as the metal layer of the first interfacial structure and a capping layer comprising one of : Co , Ru , Ir , Rh and Pt
OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH