The method 1 wherein said depositing a layer of strained silicon includes depositing a layer of strained silicon to {HEAD ~ a thickness} of {TAIL ~ between about 10 nm to 50 nm} 
of
The method 1 wherein said depositing a layer of strained silicon includes depositing a layer of strained silicon to { HEAD ~ a thickness } of { TAIL ~ between about 10 nm to 50 nm }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL