The method comprises providing a gate structure over the semiconductor substrate, wherein {TAIL ~ a dopant material} is implanted at an angle around the gate structure to form a halo structure in a source/drain region of {HEAD ~ the substrate} and underlying a portion of the gate structure 
The method comprises providing a gate structure over the semiconductor substrate , wherein { TAIL ~ a dopant material } is implanted at an angle around the gate structure to form a halo structure in a source / drain region of { HEAD ~ the substrate } and underlying a portion of the gate structure
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH