According to {HEAD ~ a fourth aspect} of the present invention, in a semiconductor substrate and a production method thereof, after the sub grain boundaries in the first semiconductor film are inactivated, {TAIL ~ a further semiconductor film} is epitaxially grown on the first semiconductor film 
According to { HEAD ~ a fourth aspect } of the present invention , in a semiconductor substrate and a production method thereof , after the sub grain boundaries in the first semiconductor film are inactivated , { TAIL ~ a further semiconductor film } is epitaxially grown on the first semiconductor film
OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH