In this way, the nickel elements are selectively introduced into a part of the amorphous silicon film, and a heat treatment is also conducted to allow {HEAD ~ crystal growth} to proceed from {TAIL ~ that portion} toward a direction parallel to a substrate 
to proceed from
In this way , the nickel elements are selectively introduced into a part of the amorphous silicon film , and a heat treatment is also conducted to allow { HEAD ~ crystal growth } to proceed from { TAIL ~ that portion } toward a direction parallel to a substrate
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH