More particularly, the present invention relates to dry plasma etching processes for etching multiple layers of semiconductor material formed on {HEAD ~ a semiconductor wafer} in {TAIL ~ order} to produce vertical sidewall structures 
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More particularly , the present invention relates to dry plasma etching processes for etching multiple layers of semiconductor material formed on { HEAD ~ a semiconductor wafer } in { TAIL ~ order } to produce vertical sidewall structures
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH