Silicon is removed in these regions to a depth such that the bottom of {TAIL ~ trenches} 238 is typically approximately 60 nm beneath the surface 212 between {HEAD ~ STI oxide} 210 and the semiconductor body 214 
Silicon is removed in these regions to a depth such that the bottom of { TAIL ~ trenches } 238 is typically approximately 60 nm beneath the surface 212 between { HEAD ~ STI oxide } 210 and the semiconductor body 214
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH