The resulting structure is then masked using a photoresist layer 406, which is patterned to define {TAIL ~ contact areas} 408 within which {HEAD ~ electrodes} 111, 113, and 150 will make contact to vias 403.  
within
The resulting structure is then masked using a photoresist layer 406 , which is patterned to define { TAIL ~ contact areas } 408 within which { HEAD ~ electrodes } 111 , 113 , and 150 will make contact to vias 403 .
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH REL OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH