{HEAD ~ A photolithographic method} wherein {TAIL ~ a mask} is made by pattern exposing and developing a o quinone diazide sensitized phenol formaldehyde resist layer, the formed resist mask then being used directly as an exposure mask for a layer of deep ultraviolet sensitive resist such as an alkyl methacrylate resist 
wherein
{ HEAD ~ A photolithographic method } wherein { TAIL ~ a mask } is made by pattern exposing and developing a o quinone diazide sensitized phenol formaldehyde resist layer , the formed resist mask then being used directly as an exposure mask for a layer of deep ultraviolet sensitive resist such as an alkyl methacrylate resist
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