More particularly, the present invention relates to dry plasma etching {HEAD ~ processes} for etching {TAIL ~ multiple layers} of semiconductor material formed on a semiconductor wafer in order to produce vertical sidewall structures 
for etching
More particularly , the present invention relates to dry plasma etching { HEAD ~ processes } for etching { TAIL ~ multiple layers } of semiconductor material formed on a semiconductor wafer in order to produce vertical sidewall structures
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH