In order to make the high frequency power amplifier module small in size, a substrate side bonding electrode electrically connected to {HEAD ~ a wire} set at {TAIL ~ a fixed reference electric potential} is place at a location farther from a side of the semiconductor chip than a substrate side output electrode electrically connected to an output wire 
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In order to make the high frequency power amplifier module small in size , a substrate side bonding electrode electrically connected to { HEAD ~ a wire } set at { TAIL ~ a fixed reference electric potential } is place at a location farther from a side of the semiconductor chip than a substrate side output electrode electrically connected to an output wire
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