implanting dopant ions of the first conductivity type into the exposed portion of {HEAD ~ the source/base region} to form {TAIL ~ an anode region} adjacent the second gate structure in the exposed portion of the source/base region 
to form
implanting dopant ions of the first conductivity type into the exposed portion of { HEAD ~ the source / base region } to form { TAIL ~ an anode region } adjacent the second gate structure in the exposed portion of the source / base region
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH