Thereby, the present invention is suitably used for photonic devices, especially for the process of manufacturing light emitting devices, and is able to increase the stability of the manufacturing process and then the yield, to increase the reliability of bonded semiconductor devices and {HEAD ~ the heat dissipation capability} of {TAIL ~ bonded semiconductor devices}, and to decrease the void formation of the bonding layer 
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Thereby , the present invention is suitably used for photonic devices , especially for the process of manufacturing light emitting devices , and is able to increase the stability of the manufacturing process and then the yield , to increase the reliability of bonded semiconductor devices and { HEAD ~ the heat dissipation capability } of { TAIL ~ bonded semiconductor devices } , and to decrease the void formation of the bonding layer
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