The semiconductor read only memory according to this invention includes a plurality of MOS transistors formed on a substrate and {HEAD ~ silicon resistances} of polycrystal or amorphous connected to the source region and {TAIL ~ the drain region} of the MOS transistors 
connected to
The semiconductor read only memory according to this invention includes a plurality of MOS transistors formed on a substrate and { HEAD ~ silicon resistances } of polycrystal or amorphous connected to the source region and { TAIL ~ the drain region } of the MOS transistors
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH REL REL OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH