{HEAD ~ A thin film polysilicon storage plane} is formed over {TAIL ~ the gate oxide layer} with a second array of alternating parallel bitlines and channel regions formed in the thin film polysilicon storage plane 
is formed over
{ HEAD ~ A thin film polysilicon storage plane } is formed over { TAIL ~ the gate oxide layer } with a second array of alternating parallel bitlines and channel regions formed in the thin film polysilicon storage plane
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH