The production method 7 comprising epitaxially growing a third semiconductor film on the remaining portions of said first semiconductor film and on {TAIL ~ exposed portions} of said first insulating film after completely removing said {HEAD ~ second insulating film} 
The production method 7 comprising epitaxially growing a third semiconductor film on the remaining portions of said first semiconductor film and on { TAIL ~ exposed portions } of said first insulating film after completely removing said { HEAD ~ second insulating film }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD