In fabrication of a semiconductor device, firstly an isolation trench is formed on a substrate to isolate a plurality of semiconductor elements, and then {HEAD ~ a thermal oxide film} is formed on {TAIL ~ a sidewall} of the trench, whereupon a silicon oxide film is formed on the substrate by chemical vapor deposition 
is formed on
In fabrication of a semiconductor device , firstly an isolation trench is formed on a substrate to isolate a plurality of semiconductor elements , and then { HEAD ~ a thermal oxide film } is formed on { TAIL ~ a sidewall } of the trench , whereupon a silicon oxide film is formed on the substrate by chemical vapor deposition
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