These and other objects are provided, according to the present invention, by a NAND type flash memory device having a dummy region forming a dummy pattern in which a common source line is formed to cross only with {HEAD ~ an isolation layer} adjacent {TAIL ~ an active region} of a normal pattern forming memory cells 
adjacent
These and other objects are provided , according to the present invention , by a NAND type flash memory device having a dummy region forming a dummy pattern in which a common source line is formed to cross only with { HEAD ~ an isolation layer } adjacent { TAIL ~ an active region } of a normal pattern forming memory cells
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