According to a fifth aspect of the present invention, there is provided a magnetoresistive random access memory comprising: a magnetoresistive element of any one of the first to third aspects; a write wiring which gives a current of the spin {HEAD ~ polarized electrons} to {TAIL ~ the magnetoresistive element}; and a soft magnetic film which covers at least part of the write wiring and absorbs a magnetic field leaked from the magnetoresistive element 
to
According to a fifth aspect of the present invention , there is provided a magnetoresistive random access memory comprising : a magnetoresistive element of any one of the first to third aspects ; a write wiring which gives a current of the spin { HEAD ~ polarized electrons } to { TAIL ~ the magnetoresistive element } ; and a soft magnetic film which covers at least part of the write wiring and absorbs a magnetic field leaked from the magnetoresistive element
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