{HEAD ~ The first insulative diffusion barrier layer} 203 is formed by using {TAIL ~ a gas mixture} at least containing an alkoxy silane represented by the general formula nSiH4−n , and an oxidative gas by a plasma CVD 
is formed by using
{ HEAD ~ The first insulative diffusion barrier layer } 203 is formed by using { TAIL ~ a gas mixture } at least containing an alkoxy silane represented by the general formula nSiH4−n , and an oxidative gas by a plasma CVD
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH REL REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH