The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened, e.g., in {HEAD ~ form} of lines and {TAIL ~ spaces pattern}, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits 
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The present invention provides a resist pattern thickening material , which can utilize ArF excimer laser light ; which , when applied over a resist pattern to be thickened , e.g. , in { HEAD ~ form } of lines and { TAIL ~ spaces pattern } , can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened ; and which is suited for forming a fine space pattern or the like , exceeding exposure limits
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