A method and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing {TAIL ~ charge} on {HEAD ~ the surface} of the oxide and heating the wafer to allow mobile ions in the oxide to drift 
A method and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing { TAIL ~ charge } on { HEAD ~ the surface } of the oxide and heating the wafer to allow mobile ions in the oxide to drift
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