Then {HEAD ~ the antireflection film} 7 of {TAIL ~ silicon nitride} having a thickness of 1.8 μm is formed on the exposed surface of the P+ type region 6 by plasma CVD 
of
Then { HEAD ~ the antireflection film } 7 of { TAIL ~ silicon nitride } having a thickness of 1.8 μm is formed on the exposed surface of the P+ type region 6 by plasma CVD
OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH