{HEAD ~ The plasma processing apparatus} 1, wherein {TAIL ~ the processing chamber} is provided therein with an electrode for supporting the semiconductor device, and wherein the gas shower plate is provided between the electrode for supporting the semiconductor device and the antenna electrode 
wherein
{ HEAD ~ The plasma processing apparatus } 1 , wherein { TAIL ~ the processing chamber } is provided therein with an electrode for supporting the semiconductor device , and wherein the gas shower plate is provided between the electrode for supporting the semiconductor device and the antenna electrode
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH