An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c plane or a surface that inclines a c plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of {TAIL ~ threading edge dislocation} arrays that are formed in the SiC epitaxial film is {HEAD ~ 10 arrays}/cm2 or less 