{HEAD ~ A semiconductor layer} 40 is then formed in {TAIL ~ contact} with the source/drain electrodes 20 s, 20 d and on the gate electrode 20 g with the inorganic insulating layer 35 interposed therebetween 
is formed in
{ HEAD ~ A semiconductor layer } 40 is then formed in { TAIL ~ contact } with the source / drain electrodes 20 s , 20 d and on the gate electrode 20 g with the inorganic insulating layer 35 interposed therebetween
HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH REL OTH REL REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH