Photopolymerization of the low conductivity polymer films of the present invention is useful in the formation of polymer resist/masks for microcircuit photolithography where high resolution patterned {HEAD ~ lines} can be achieved by argon ion laser or {TAIL ~ electron beam exposure} of the microcircuit patterns 
achieved by
Photopolymerization of the low conductivity polymer films of the present invention is useful in the formation of polymer resist / masks for microcircuit photolithography where high resolution patterned { HEAD ~ lines } can be achieved by argon ion laser or { TAIL ~ electron beam exposure } of the microcircuit patterns
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