A field effect device structure comprising a semiconductor p n junction adjacent to an insulated gate electrode is utilized in which {HEAD ~ a depletion region} is created under the gate electrode in {TAIL ~ the presence} of alternating forward and reverse biasing of the p n junction 
is created in
A field effect device structure comprising a semiconductor p n junction adjacent to an insulated gate electrode is utilized in which { HEAD ~ a depletion region } is created under the gate electrode in { TAIL ~ the presence } of alternating forward and reverse biasing of the p n junction
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