{HEAD ~ The invention} is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate, {TAIL ~ a method} of forming DRAM circuitry, DRAM circuitry, a method of forming a field emission device, and a field emission device 
is
{ HEAD ~ The invention } is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate , { TAIL ~ a method } of forming DRAM circuitry , DRAM circuitry , a method of forming a field emission device , and a field emission device
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