The flow of reactant gases is maintained and the temperature of 425° C. is maintained until a desired thickness of {HEAD ~ borophosphosilicate glass} is formed on {TAIL ~ the wafer} 
is formed on
The flow of reactant gases is maintained and the temperature of 425 ° C. is maintained until a desired thickness of { HEAD ~ borophosphosilicate glass } is formed on { TAIL ~ the wafer }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL