The invention relates to a spin transfer MRAM cell in which an upper CPP cell is separated from a lower MTJ cell by a conducting layer in order to form {TAIL ~ different read} and write paths, and {HEAD ~ each bit cell} has two spin transfer MRAM cells that are written into opposite resistance states 
The invention relates to a spin transfer MRAM cell in which an upper CPP cell is separated from a lower MTJ cell by a conducting layer in order to form { TAIL ~ different read } and write paths , and { HEAD ~ each bit cell } has two spin transfer MRAM cells that are written into opposite resistance states
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