One may form {TAIL ~ the CTSL} as part of {HEAD ~ a field effect transistor} wherein the CTSL is part of the FET gate or form the CTSL as the cladding layers of a quantum wire laser having a GaAs active layer 
One may form { TAIL ~ the CTSL } as part of { HEAD ~ a field effect transistor } wherein the CTSL is part of the FET gate or form the CTSL as the cladding layers of a quantum wire laser having a GaAs active layer
OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH