Therefore, the method provides structures for i) an insulating film of an NDRO type ferroelectric memory device that has {HEAD ~ a structure} of Metal film/Ferroelectric film/Insulating film/Silicon, ii) a gate oxide film substituting for silicon oxide film, and {TAIL ~ iii) an insulating film} of Electro Luminescent Display device 
of
Therefore , the method provides structures for i ) an insulating film of an NDRO type ferroelectric memory device that has { HEAD ~ a structure } of Metal film / Ferroelectric film / Insulating film / Silicon , ii ) a gate oxide film substituting for silicon oxide film , and { TAIL ~ iii ) an insulating film } of Electro Luminescent Display device
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH