The semiconductor device manufacturing method 1, wherein the under bump layer is formed from one of a single film and a laminate of {HEAD ~ a plurality} of {TAIL ~ films} made of one selected from a group consisting of nickel, nickel alloy, copper and copper alloy which are formed by sputtering 
of
The semiconductor device manufacturing method 1 , wherein the under bump layer is formed from one of a single film and a laminate of { HEAD ~ a plurality } of { TAIL ~ films } made of one selected from a group consisting of nickel , nickel alloy , copper and copper alloy which are formed by sputtering
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH