Furthermore, {HEAD ~ the above device} can be modified by varying {TAIL ~ the band gap} of the active layer 204 with the same layer structure being used 
modified by varying
Furthermore , { HEAD ~ the above device } can be modified by varying { TAIL ~ the band gap } of the active layer 204 with the same layer structure being used
OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH