A method 3 wherein the irradiating step of said second portion with {HEAD ~ the laser light} is carried out after etching {TAIL ~ a silicon oxide film} formed on the second portion of the semiconductor film due to the oxidizing step 
A method 3 wherein the irradiating step of said second portion with { HEAD ~ the laser light } is carried out after etching { TAIL ~ a silicon oxide film } formed on the second portion of the semiconductor film due to the oxidizing step
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH