Viewed from a second process aspect, the present invention is directed to {HEAD ~ a method} of fabricating {TAIL ~ field effect transistors} each having a drain region and a source region in a semiconductor body having a major surface and having a bulk of a first conductivity type 
of fabricating
Viewed from a second process aspect , the present invention is directed to { HEAD ~ a method } of fabricating { TAIL ~ field effect transistors } each having a drain region and a source region in a semiconductor body having a major surface and having a bulk of a first conductivity type
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