Accordingly, it is {TAIL ~ an object} of the present invention to provide {HEAD ~ an improved semiconductor memory device} and a fabrication method thereof which is capable of lessening the parasitic capacitance formed due to polysilicon and impurity areas 
Accordingly , it is { TAIL ~ an object } of the present invention to provide { HEAD ~ an improved semiconductor memory device } and a fabrication method thereof which is capable of lessening the parasitic capacitance formed due to polysilicon and impurity areas
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