The substrate processing method 1, wherein the first high frequency power is equal to or greater than 100 W and equal to or smaller than 500 W and {HEAD ~ the second high frequency power} is equal to or greater than {TAIL ~ 1000 W} and equal to or smaller than 2400 W 
is equal to
The substrate processing method 1 , wherein the first high frequency power is equal to or greater than 100 W and equal to or smaller than 500 W and { HEAD ~ the second high frequency power } is equal to or greater than { TAIL ~ 1000 W } and equal to or smaller than 2400 W
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH