According to {HEAD ~ another embodiment} of the present invention, {TAIL ~ a bipolar junction transistor} includes an intrinsic base layer with a raised region having a first portion and a second portion 
According to { HEAD ~ another embodiment } of the present invention , { TAIL ~ a bipolar junction transistor } includes an intrinsic base layer with a raised region having a first portion and a second portion
OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH