The invention is directed to a process whereby {HEAD ~ layers} of borophosphosilicate glass are deposited at {TAIL ~ low pressure} on a plurality of silicon wafers located within a process tube 
are deposited at
The invention is directed to a process whereby { HEAD ~ layers } of borophosphosilicate glass are deposited at { TAIL ~ low pressure } on a plurality of silicon wafers located within a process tube
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH