implanting {TAIL ~ dopant ions} of {HEAD ~ the first conductivity type} into the exposed portion of the source/base region to form an anode region adjacent the second gate structure in the exposed portion of the source/base region 
implanting { TAIL ~ dopant ions } of { HEAD ~ the first conductivity type } into the exposed portion of the source / base region to form an anode region adjacent the second gate structure in the exposed portion of the source / base region
OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH