{HEAD ~ A substrate processing method} is provided to process {TAIL ~ a substrate} having a structure in which a lower photoresist layer, a hard mask layer containing silicon, and an upper photoresist layer are sequentially formed on a target layer to be processed 
is provided to process
{ HEAD ~ A substrate processing method } is provided to process { TAIL ~ a substrate } having a structure in which a lower photoresist layer , a hard mask layer containing silicon , and an upper photoresist layer are sequentially formed on a target layer to be processed
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