{HEAD ~ a gate electrode} formed over {TAIL ~ said silicon substrate} in correspondence to said channel region via a gate insulation film, said gate electrode carrying sidewall insulation films on respective, mutually opposite sidewall surfaces thereof 
formed over
{ HEAD ~ a gate electrode } formed over { TAIL ~ said silicon substrate } in correspondence to said channel region via a gate insulation film , said gate electrode carrying sidewall insulation films on respective , mutually opposite sidewall surfaces thereof
HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH