A second ion implantation is carried out under {HEAD ~ the conditions} of {TAIL ~ a concentration} of about 5.0×1015 ions/cm2 and an acceleration energy of about 40 KeV using As+ ions serving as carriers 
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A second ion implantation is carried out under { HEAD ~ the conditions } of { TAIL ~ a concentration } of about 5.0×1015 ions / cm2 and an acceleration energy of about 40 KeV using As+ ions serving as carriers
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH