The method includes providing a substrate prepared with {TAIL ~ a cell area} and forming first and second gates of {HEAD ~ first and second transistors} in the cell area 
The method includes providing a substrate prepared with { TAIL ~ a cell area } and forming first and second gates of { HEAD ~ first and second transistors } in the cell area
OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH