{TAIL ~ The method} in accordance with {HEAD ~ the present invention} is compatible with conventional CMOS fabrication processes to form a zener diode and a lateral silicon controlled rectifier constituting an on chip ESD protection circuit in a semiconductor substrate 
{ TAIL ~ The method } in accordance with { HEAD ~ the present invention } is compatible with conventional CMOS fabrication processes to form a zener diode and a lateral silicon controlled rectifier constituting an on chip ESD protection circuit in a semiconductor substrate
TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH