FIG 2 illustrates, in a cross sectional view, a dry plasma etched {TAIL ~ multilayer semiconductor structure} 20 of a semiconductor device 2000, according to {HEAD ~ the present invention} 
FIG 2 illustrates , in a cross sectional view , a dry plasma etched { TAIL ~ multilayer semiconductor structure } 20 of a semiconductor device 2000 , according to { HEAD ~ the present invention }
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