Interference from charge injection and ion neutralization is determined on the basis of both the contact potential and {HEAD ~ the semiconductor surface potential barrier} of {TAIL ~ the wafer}, permitting accurate determination of the mobile ion concentration 
of
Interference from charge injection and ion neutralization is determined on the basis of both the contact potential and { HEAD ~ the semiconductor surface potential barrier } of { TAIL ~ the wafer } , permitting accurate determination of the mobile ion concentration
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH