The method is useful in characterizing parameters of field effect integrated circuit components subject to various charge instability mechanisms and may also be useful as a means for altering {TAIL ~ charge conditions} in {HEAD ~ various non volatile memory devices} 
The method is useful in characterizing parameters of field effect integrated circuit components subject to various charge instability mechanisms and may also be useful as a means for altering { TAIL ~ charge conditions } in { HEAD ~ various non volatile memory devices }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD