The method includes applying a first gate voltage across a gate of the semiconductor transistor 22 to allow the first voltage to form a first write current first time duration from the sourceline SL to the bitline BL and writing {HEAD ~ a first data state} to {TAIL ~ the resistive sense memory cell} 10 
to
The method includes applying a first gate voltage across a gate of the semiconductor transistor 22 to allow the first voltage to form a first write current first time duration from the sourceline SL to the bitline BL and writing { HEAD ~ a first data state } to { TAIL ~ the resistive sense memory cell } 10
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH