One method of fabrication of the source and drain regions is to form an isolating isolation region around {TAIL ~ active areas} in which {HEAD ~ a transistor} is to be formed in a semiconductor body 
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One method of fabrication of the source and drain regions is to form an isolating isolation region around { TAIL ~ active areas } in which { HEAD ~ a transistor } is to be formed in a semiconductor body
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL REL OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH