{HEAD ~ A pattern} of the damage layer is defined by {TAIL ~ photolithography}, and the damage layer having a depth of about 20 to 5,000 Å is formed using CF4, CHF3, or Ar gas at a pressure of 900 mTorr or less, or using Cl2 or HBr 
is defined by
{ HEAD ~ A pattern } of the damage layer is defined by { TAIL ~ photolithography } , and the damage layer having a depth of about 20 to 5,000 Å is formed using CF4 , CHF3 , or Ar gas at a pressure of 900 mTorr or less , or using Cl2 or HBr
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH