The invention is a method of depositing {TAIL ~ an aluminum nitride} comprising layer over a semiconductor substrate, a method of forming DRAM circuitry, DRAM circuitry, {HEAD ~ a method} of forming a field emission device, and a field emission device 
The invention is a method of depositing { TAIL ~ an aluminum nitride } comprising layer over a semiconductor substrate , a method of forming DRAM circuitry , DRAM circuitry , { HEAD ~ a method } of forming a field emission device , and a field emission device
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