The invention generally relates to multi layered semiconductor structures and more particularly to a method for preventing or avoiding the presence of unetched polymer residues including photoresist remaining in anisotropically etched semiconductor features including {TAIL ~ trench line features} formed in {HEAD ~ a dual damascene process} 
The invention generally relates to multi layered semiconductor structures and more particularly to a method for preventing or avoiding the presence of unetched polymer residues including photoresist remaining in anisotropically etched semiconductor features including { TAIL ~ trench line features } formed in { HEAD ~ a dual damascene process }
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