In the aforementioned embodiment, {TAIL ~ the DMOS device} may include {HEAD ~ a plurality} of the first buried layers, preferably each having a second conductive type impurity density higher than that of the high voltage well 
In the aforementioned embodiment , { TAIL ~ the DMOS device } may include { HEAD ~ a plurality } of the first buried layers , preferably each having a second conductive type impurity density higher than that of the high voltage well
OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH