More specifically, the present invention relates to an IGBT with reduced channel length or {TAIL ~ deeper enhanced concentration region} that improves Vce,on and that improves {HEAD ~ switching power loss} 
More specifically , the present invention relates to an IGBT with reduced channel length or { TAIL ~ deeper enhanced concentration region } that improves Vce , on and that improves { HEAD ~ switching power loss }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD