wherein {HEAD ~ the capacitor voltage} generated by {TAIL ~ the filter capacitor} sets a bias point of the second field effect transistor such that the second field effect transistor comprises characteristics of an integrated precision resistor; and 
generated by
wherein { HEAD ~ the capacitor voltage } generated by { TAIL ~ the filter capacitor } sets a bias point of the second field effect transistor such that the second field effect transistor comprises characteristics of an integrated precision resistor ; and
OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH