The device 1 including {TAIL ~ refractory metal silicide layers} formed over {HEAD ~ said gate electrode layers} 
The device 1 including { TAIL ~ refractory metal silicide layers } formed over { HEAD ~ said gate electrode layers }
OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD