{HEAD ~ A thin film polysilicon storage plane} is formed over the gate oxide layer with {TAIL ~ a second array} of alternating parallel bitlines and channel regions formed in the thin film polysilicon storage plane 
{ HEAD ~ A thin film polysilicon storage plane } is formed over the gate oxide layer with { TAIL ~ a second array } of alternating parallel bitlines and channel regions formed in the thin film polysilicon storage plane
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH