{HEAD ~ A semiconductor device} 3, wherein each of the first resistor, {TAIL ~ the second resistor}, and the third resistor has a wiring comprising the same material as the first and second gate electrodes 
{ HEAD ~ A semiconductor device } 3 , wherein each of the first resistor , { TAIL ~ the second resistor } , and the third resistor has a wiring comprising the same material as the first and second gate electrodes
HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH