According to the method, a gate stack is formed on a semiconductor substrate, and impurity ions are implanted at a predetermined angle to form {HEAD ~ a source/drain junction} in {TAIL ~ the semiconductor substrate} 
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According to the method , a gate stack is formed on a semiconductor substrate , and impurity ions are implanted at a predetermined angle to form { HEAD ~ a source / drain junction } in { TAIL ~ the semiconductor substrate }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL