with respect to the p channel MOS and by silicate glass, such as AsSG, PSG, etc., with respect to the n channel MOS to implement a high temperature and short time heat process by using the RTA process to thereby carry out {HEAD ~ solid phase diffusion} from {TAIL ~ the side walls} to form a diffused layer shallower than a diffused layer by ion implantation and RTA 
from
with respect to the p channel MOS and by silicate glass , such as AsSG , PSG , etc . , with respect to the n channel MOS to implement a high temperature and short time heat process by using the RTA process to thereby carry out { HEAD ~ solid phase diffusion } from { TAIL ~ the side walls } to form a diffused layer shallower than a diffused layer by ion implantation and RTA
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH