Meanwhile, using the nitride layer, after depositing the silicon nitride to a thickness of about 10 to about 100 Å on the silicon substrate, {HEAD ~ a pattern} of the silicon nitride layer is defined by {TAIL ~ photolithography} and the silicon nitride layer is partially removed depending on the pattern 
is defined by
Meanwhile , using the nitride layer , after depositing the silicon nitride to a thickness of about 10 to about 100 Å on the silicon substrate , { HEAD ~ a pattern } of the silicon nitride layer is defined by { TAIL ~ photolithography } and the silicon nitride layer is partially removed depending on the pattern
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