{HEAD ~ The DMOS device} is formed in a substrate, and includes a high voltage well, a first field oxide region, a first gate, a first source, {TAIL ~ a drain}, a body region, a body electrode, a second field oxide region, a second gate, and a second source 
includes
{ HEAD ~ The DMOS device } is formed in a substrate , and includes a high voltage well , a first field oxide region , a first gate , a first source , { TAIL ~ a drain } , a body region , a body electrode , a second field oxide region , a second gate , and a second source
HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH REL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH