According to the method, a gate stack is formed on a semiconductor substrate, and {HEAD ~ impurity ions} are implanted at {TAIL ~ a predetermined angle} to form a source/drain junction in the semiconductor substrate 
are implanted at
According to the method , a gate stack is formed on a semiconductor substrate , and { HEAD ~ impurity ions } are implanted at { TAIL ~ a predetermined angle } to form a source / drain junction in the semiconductor substrate
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH