source and drain extension regions of a p type diffusion region formed in said silicon substrate at respective lateral sides of {HEAD ~ said gate electrode} across {TAIL ~ said channel region} 
across
source and drain extension regions of a p type diffusion region formed in said silicon substrate at respective lateral sides of { HEAD ~ said gate electrode } across { TAIL ~ said channel region }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL