Advantages of preferred embodiments of the present invention include providing methods of patterning MTJs of MRAM devices wherein {HEAD ~ a wet etch process} may be used to pattern {TAIL ~ the top magnetic material layer} 
used to pattern
Advantages of preferred embodiments of the present invention include providing methods of patterning MTJs of MRAM devices wherein { HEAD ~ a wet etch process } may be used to pattern { TAIL ~ the top magnetic material layer }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL