{HEAD ~ Embodiments} of {TAIL ~ the invention} provide methods of forming a titanium nitride layer that suppress the generation of hafnium chloride on a surface of a hafnium oxide layer, and methods of fabricating a storage capacitor having the titanium nitride layer 
of
{ HEAD ~ Embodiments } of { TAIL ~ the invention } provide methods of forming a titanium nitride layer that suppress the generation of hafnium chloride on a surface of a hafnium oxide layer , and methods of fabricating a storage capacitor having the titanium nitride layer
HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH