{HEAD ~ a buffer insulating layer} between the silicon nitride liner and {TAIL ~ the self aligned contact pad} at the top portions of the first and second gate electrodes, 
between
{ HEAD ~ a buffer insulating layer } between the silicon nitride liner and { TAIL ~ the self aligned contact pad } at the top portions of the first and second gate electrodes ,
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH