{HEAD ~ This invention} relates to methods of depositing aluminum nitride comprising layers over semiconductor substrates, to methods of forming DRAM circuitry, to {TAIL ~ DRAM circuitry}, to methods of forming field emission devices, and to field emission devices 
relates to
{ HEAD ~ This invention } relates to methods of depositing aluminum nitride comprising layers over semiconductor substrates , to methods of forming DRAM circuitry , to { TAIL ~ DRAM circuitry } , to methods of forming field emission devices , and to field emission devices
HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH