In the second diffused region, a distribution in a depth direction of carriers has a profile in which the concentration is more than 5×1018 cm 3 at the peak and is in {TAIL ~ correspondence} with a carrier concentration of {HEAD ~ the semiconductor substrate} at a depth less than 0.04 μm 
In the second diffused region , a distribution in a depth direction of carriers has a profile in which the concentration is more than 5×1018 cm 3 at the peak and is in { TAIL ~ correspondence } with a carrier concentration of { HEAD ~ the semiconductor substrate } at a depth less than 0.04 μm
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