The present invention relates to a dry etching apparatus of {HEAD ~ the type} used for etching {TAIL ~ an inter layer dielectric} among dry etching processes and to a dry etching method; and, the present invention relates particularly to a method in which resist damage can be reduced in via etching, high aspect ratio contact etching, self align contact etching, trench etching, damascene etching, gate mask etching, and the like using a resist pattern for ArF lithography or later lithography 
used for etching
The present invention relates to a dry etching apparatus of { HEAD ~ the type } used for etching { TAIL ~ an inter layer dielectric } among dry etching processes and to a dry etching method ; and , the present invention relates particularly to a method in which resist damage can be reduced in via etching , high aspect ratio contact etching , self align contact etching , trench etching , damascene etching , gate mask etching , and the like using a resist pattern for ArF lithography or later lithography
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