Further, during {TAIL ~ the step} of forming the second oxide layer, that is, the dual oxide layer, since no oxide layer remains on {HEAD ~ the surface} of the silicon substrate, the thickness of the oxide layer is controlled regardless of the position on the wafer 
Further , during { TAIL ~ the step } of forming the second oxide layer , that is , the dual oxide layer , since no oxide layer remains on { HEAD ~ the surface } of the silicon substrate , the thickness of the oxide layer is controlled regardless of the position on the wafer
OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH