A method for forming CMOS devices on a semiconductor substrate is disclosed in which {HEAD ~ gate structures} are formed within both the core region and {TAIL ~ the non core region} of the semiconductor substrate 
are formed within
A method for forming CMOS devices on a semiconductor substrate is disclosed in which { HEAD ~ gate structures } are formed within both the core region and { TAIL ~ the non core region } of the semiconductor substrate
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH