The present invention was made in light of the foregoing circumstances, and its object is to offer {HEAD ~ an epitaxial SiC single crystal substrate} which reduces {TAIL ~ threading} edge dislocation arrays in SiC epitaxial film, and a method of manufacture of the epitaxial SiC single crystal substrate 
reduces
The present invention was made in light of the foregoing circumstances , and its object is to offer { HEAD ~ an epitaxial SiC single crystal substrate } which reduces { TAIL ~ threading } edge dislocation arrays in SiC epitaxial film , and a method of manufacture of the epitaxial SiC single crystal substrate
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH