a first blocking layer formed on the conductive substrate, the first blocking layer being formed of {HEAD ~ amorphous silicon carbide} or amorphous silicon nitride, and containing 1×10 4 to 1.0 atomic % of an element of Group III or V of {TAIL ~ the Periodic Table} 
a first blocking layer formed on the conductive substrate , the first blocking layer being formed of { HEAD ~ amorphous silicon carbide } or amorphous silicon nitride , and containing 1×10 4 to 1.0 atomic % of an element of Group III or V of { TAIL ~ the Periodic Table }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL