A nonvolatile semiconductor memory device includes a memory cell array for storing {HEAD ~ user data} provided by arranging {TAIL ~ memory cells} each having a variable resistive element having a first electrode, a second electrode, and a variable resistor made of a metal oxide sandwiched between the first and second electrodes 
provided by arranging
A nonvolatile semiconductor memory device includes a memory cell array for storing { HEAD ~ user data } provided by arranging { TAIL ~ memory cells } each having a variable resistive element having a first electrode , a second electrode , and a variable resistor made of a metal oxide sandwiched between the first and second electrodes
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH