{HEAD ~ The invention} is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate, a method of forming DRAM circuitry, DRAM circuitry, a method of forming a field emission device, and {TAIL ~ a field emission device} 
is
{ HEAD ~ The invention } is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate , a method of forming DRAM circuitry , DRAM circuitry , a method of forming a field emission device , and { TAIL ~ a field emission device }
HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL