Advantages of {TAIL ~ preferred embodiments} of the present invention include providing {HEAD ~ methods} of patterning MTJs of MRAM devices wherein a wet etch process may be used to pattern the top magnetic material layer 
Advantages of { TAIL ~ preferred embodiments } of the present invention include providing { HEAD ~ methods } of patterning MTJs of MRAM devices wherein a wet etch process may be used to pattern the top magnetic material layer
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