The semiconductor structure 3 wherein the electrical isolation of the source and drain regions comprises a dielectric region partly surrounding the regions and {HEAD ~ a dielectric layer} under {TAIL ~ each} of the regions 
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The semiconductor structure 3 wherein the electrical isolation of the source and drain regions comprises a dielectric region partly surrounding the regions and { HEAD ~ a dielectric layer } under { TAIL ~ each } of the regions
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH