A semiconductor device 3, wherein {HEAD ~ each} of the first resistor, the second resistor, and the third resistor has {TAIL ~ a wiring} comprising the same material as the first and second gate electrodes 
has
A semiconductor device 3 , wherein { HEAD ~ each } of the first resistor , the second resistor , and the third resistor has { TAIL ~ a wiring } comprising the same material as the first and second gate electrodes
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH