A drain region and a source/base region are formed in {HEAD ~ the semiconductor substrate} adjacent {TAIL ~ the first gate structure} and a cathode region is formed in the semiconductor substrate adjacent the second gate structure 
adjacent
A drain region and a source / base region are formed in { HEAD ~ the semiconductor substrate } adjacent { TAIL ~ the first gate structure } and a cathode region is formed in the semiconductor substrate adjacent the second gate structure
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH