As a result, {TAIL ~ the lateral length} of the spacer structure can be well controlled and {HEAD ~ the electrical performance} of the later formed semiconductor device can be well controlled as well 
As a result , { TAIL ~ the lateral length } of the spacer structure can be well controlled and { HEAD ~ the electrical performance } of the later formed semiconductor device can be well controlled as well
OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH