{HEAD ~ The present invention} was made in {TAIL ~ light} of the foregoing circumstances, and its object is to offer an epitaxial SiC single crystal substrate which reduces threading edge dislocation arrays in SiC epitaxial film, and a method of manufacture of the epitaxial SiC single crystal substrate 
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{ HEAD ~ The present invention } was made in { TAIL ~ light } of the foregoing circumstances , and its object is to offer an epitaxial SiC single crystal substrate which reduces threading edge dislocation arrays in SiC epitaxial film , and a method of manufacture of the epitaxial SiC single crystal substrate
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