The present invention relates to a method for epitaxially growing a semiconductor metal compound layer, {HEAD ~ in particular, a semiconductor metal compound layer} with {TAIL ~ high crystal orientation}, in a surface portion of a semiconductor layer 
with
The present invention relates to a method for epitaxially growing a semiconductor metal compound layer , { HEAD ~ in particular , a semiconductor metal compound layer } with { TAIL ~ high crystal orientation } , in a surface portion of a semiconductor layer
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH