{HEAD ~ All} of the layers are successively grown by {TAIL ~ a vapor phase epitaxial process} wherein the lattice constant of the GaInAs layer is larger than that of the InP layer at room temperature 
are successively grown by
{ HEAD ~ All } of the layers are successively grown by { TAIL ~ a vapor phase epitaxial process } wherein the lattice constant of the GaInAs layer is larger than that of the InP layer at room temperature
HEAD HEAD HEAD HEAD HEAD OTH OTH OTH REL REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH