Accordingly, an object of the present invention is to provide a process for forming a thin film of {HEAD ~ amorphous silicon} of {TAIL ~ a uniform thickness} over the entire surface of a relatively large insulating substrate 
of
Accordingly , an object of the present invention is to provide a process for forming a thin film of { HEAD ~ amorphous silicon } of { TAIL ~ a uniform thickness } over the entire surface of a relatively large insulating substrate
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH