A semiconductor device is made by steps of removing portions of a first capping layer, removing {HEAD ~ portions} of {TAIL ~ a sacrificial layer}, recessing sidewalls, and forming fin structures 
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A semiconductor device is made by steps of removing portions of a first capping layer , removing { HEAD ~ portions } of { TAIL ~ a sacrificial layer } , recessing sidewalls , and forming fin structures
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH