The NAND type flash memory device 1, wherein {TAIL ~ said isolation layer} is formed by using {HEAD ~ CVD process} through STI process 
The NAND type flash memory device 1 , wherein { TAIL ~ said isolation layer } is formed by using { HEAD ~ CVD process } through STI process
OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH