A semiconductor device wherein destruction of {HEAD ~ a sealing ring} caused by cracking of {TAIL ~ an interlayer} dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided 
caused by cracking of
A semiconductor device wherein destruction of { HEAD ~ a sealing ring } caused by cracking of { TAIL ~ an interlayer } dielectric film is difficult to occur , as well as a method for manufacturing the semiconductor device , are provided
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH