In view of the above, the present invention is characterized in that in a manufacturing process of semiconductor devices integrated on a single substrate, {HEAD ~ laser light} is selectively applied to the substrate at {TAIL ~ different illumination energies} that are determined in accordance with required semiconductor characteristics 
is selectively applied at
In view of the above , the present invention is characterized in that in a manufacturing process of semiconductor devices integrated on a single substrate , { HEAD ~ laser light } is selectively applied to the substrate at { TAIL ~ different illumination energies } that are determined in accordance with required semiconductor characteristics
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH