Next, a semiconductor metal compound layer is epitaxially grown in the surface portion of the semiconductor layer by causing {HEAD ~ a reaction} between an element included in the semiconductor layer and {TAIL ~ a metal} included in the metal film through annealing carried out on the metal film 
between
Next , a semiconductor metal compound layer is epitaxially grown in the surface portion of the semiconductor layer by causing { HEAD ~ a reaction } between an element included in the semiconductor layer and { TAIL ~ a metal } included in the metal film through annealing carried out on the metal film
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH