In fabrication of a semiconductor device, firstly an isolation trench is formed on a substrate to isolate a plurality of {HEAD ~ semiconductor elements}, and then a thermal oxide film is formed on a sidewall of the trench, whereupon a silicon oxide film is formed on {TAIL ~ the substrate} by chemical vapor deposition 
In fabrication of a semiconductor device , firstly an isolation trench is formed on a substrate to isolate a plurality of { HEAD ~ semiconductor elements } , and then a thermal oxide film is formed on a sidewall of the trench , whereupon a silicon oxide film is formed on { TAIL ~ the substrate } by chemical vapor deposition
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