The invention includes {HEAD ~ a non volatile memory cell} comprising a field effect transistor construction having {TAIL ~ a body region} within a crystalline material 
The invention includes { HEAD ~ a non volatile memory cell } comprising a field effect transistor construction having { TAIL ~ a body region } within a crystalline material
OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH