Finally, {TAIL ~ the compound semiconductor substrate} 10 is removed by means of methods , so that the epitaxial layers 11 grown on the compound semiconductor substrate 10 can be transferred onto the substrate 2 to form {HEAD ~ a high efficiency photonic device} 5 
Finally , { TAIL ~ the compound semiconductor substrate } 10 is removed by means of methods , so that the epitaxial layers 11 grown on the compound semiconductor substrate 10 can be transferred onto the substrate 2 to form { HEAD ~ a high efficiency photonic device } 5
OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH