The precursor solution formulation enables {HEAD ~ the formation} of {TAIL ~ a film} having a dielectric constant less than 2.5, mechanical properties sufficient for IMD or PMD layers, and minimal levels of metal impurities  
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The precursor solution formulation enables { HEAD ~ the formation } of { TAIL ~ a film } having a dielectric constant less than 2.5 , mechanical properties sufficient for IMD or PMD layers , and minimal levels of metal impurities
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH