A quick wet etching process is performed to remove a portion of {HEAD ~ the remaining first oxide} located on {TAIL ~ the top} of the gate structure and on the substrate 
located on
A quick wet etching process is performed to remove a portion of { HEAD ~ the remaining first oxide } located on { TAIL ~ the top } of the gate structure and on the substrate
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH