To achieve the above and other objectives, the present invention provides a ferromagnetic/ antiferromagnetic coupling film structure inclding: a substrate; {HEAD ~ an antiferromagnetic layer} of {TAIL ~ cobalt oxide} having a thickness of 2 to 15 monolayers and formed on the substrate at a temperature ranging from 700K to 900K; and a ferromagnetic layer of cobalt having a thickness of at least one monolayer formed on the antiferromagnetic layer of cobalt oxide 
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To achieve the above and other objectives , the present invention provides a ferromagnetic/ antiferromagnetic coupling film structure inclding : a substrate ; { HEAD ~ an antiferromagnetic layer } of { TAIL ~ cobalt oxide } having a thickness of 2 to 15 monolayers and formed on the substrate at a temperature ranging from 700 K to 900 K ; and a ferromagnetic layer of cobalt having a thickness of at least one monolayer formed on the antiferromagnetic layer of cobalt oxide
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