{HEAD ~ A quick wet etching process} is performed to remove {TAIL ~ a portion} of the remaining first oxide located on the top of the gate structure and on the substrate 
is performed to remove
{ HEAD ~ A quick wet etching process } is performed to remove { TAIL ~ a portion } of the remaining first oxide located on the top of the gate structure and on the substrate
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH