{HEAD ~ The method} of forming {TAIL ~ a dual oxide layer} 1, wherein said removing of one portion of the nitride layer comprises depositing a photoresist on the nitride layer, and exposing the photoresist to light and developing the photoresist 
of forming
{ HEAD ~ The method } of forming { TAIL ~ a dual oxide layer } 1 , wherein said removing of one portion of the nitride layer comprises depositing a photoresist on the nitride layer , and exposing the photoresist to light and developing the photoresist
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