The present invention is generally related to integrated circuit structures, and more particularly, to {HEAD ~ a one time programmable Metal Oxide Semiconductor Field Effect Transistor} that is programmed by {TAIL ~ an electromigration mechanism} 
is programmed by
The present invention is generally related to integrated circuit structures , and more particularly , to { HEAD ~ a one time programmable Metal Oxide Semiconductor Field Effect Transistor } that is programmed by { TAIL ~ an electromigration mechanism }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL