FIG 11 shows a sectional structure of a reflection mask, which is another example of {TAIL ~ an optical element} of the present invention, and the relationship between the position of a pattern 221 formed from a multilayer, which is a region having a high reflectivity, and the reflected radiation intensity of incident radiation when vacuum ultraviolet radiation or X radiation 411 is introduced at an incidence angle θ to {HEAD ~ the reflection mask} 
FIG 11 shows a sectional structure of a reflection mask , which is another example of { TAIL ~ an optical element } of the present invention , and the relationship between the position of a pattern 221 formed from a multilayer , which is a region having a high reflectivity , and the reflected radiation intensity of incident radiation when vacuum ultraviolet radiation or X radiation 411 is introduced at an incidence angle θ to { HEAD ~ the reflection mask }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD