the conduction layer, the transition layers, and the charge accumulation layer are respectively made of {HEAD ~ a Group III V compound semiconductor} including {TAIL ~ at least one element} selected from the group consisting of In and Ga of the Group III element and As of the Group V element; and 
including
the conduction layer , the transition layers , and the charge accumulation layer are respectively made of { HEAD ~ a Group III V compound semiconductor } including { TAIL ~ at least one element } selected from the group consisting of In and Ga of the Group III element and As of the Group V element ; and
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH