One method of {HEAD ~ fabrication} of the source and {TAIL ~ drain regions} is to form an isolating isolation region around active areas in which a transistor is to be formed in a semiconductor body 
of
One method of { HEAD ~ fabrication } of the source and { TAIL ~ drain regions } is to form an isolating isolation region around active areas in which a transistor is to be formed in a semiconductor body
OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH