A lithographic method of forming submicron polysilicon features on a semiconductor substrate, including the steps of coating said substrate with an anti reflective coating comprising two layers having matched indices of refraction and {HEAD ~ extinction coefficient} selected to reduce {TAIL ~ reflection} to less than 1% with 193 nm wavelength exposure 
selected to reduce
A lithographic method of forming submicron polysilicon features on a semiconductor substrate , including the steps of coating said substrate with an anti reflective coating comprising two layers having matched indices of refraction and { HEAD ~ extinction coefficient } selected to reduce { TAIL ~ reflection } to less than 1 % with 193 nm wavelength exposure
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