{HEAD ~ The invention} generally relates to {TAIL ~ multi layered semiconductor structures} and more particularly to a method for preventing or avoiding the presence of unetched polymer residues including photoresist remaining in anisotropically etched semiconductor features including trench line features formed in a dual damascene process 
generally relates to
{ HEAD ~ The invention } generally relates to { TAIL ~ multi layered semiconductor structures } and more particularly to a method for preventing or avoiding the presence of unetched polymer residues including photoresist remaining in anisotropically etched semiconductor features including trench line features formed in a dual damascene process
HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH