Thus a semiconductor device can be obtained capable of reducing {HEAD ~ a compressive stress} caused in the semiconductor substrate near an element isolating trench region to minimize {TAIL ~ formation} of crystal defect 
to minimize
Thus a semiconductor device can be obtained capable of reducing { HEAD ~ a compressive stress } caused in the semiconductor substrate near an element isolating trench region to minimize { TAIL ~ formation } of crystal defect
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH