According to the tunneling magnetic detecting element of the present invention, the rate of change in resistance can be increased from the level of the existing technology without changing {HEAD ~ the configurations} of the pinned magnetic layer or the free magnetic layer from {TAIL ~ the existing technology} 
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According to the tunneling magnetic detecting element of the present invention , the rate of change in resistance can be increased from the level of the existing technology without changing { HEAD ~ the configurations } of the pinned magnetic layer or the free magnetic layer from { TAIL ~ the existing technology }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL