In {HEAD ~ this way}, the depth and concentration of the selectively doped silicon material layer may be controlled, while the underlying intrinsic silicon layer limits source/drain conduction to the substrate surface above {TAIL ~ the halo} 
In { HEAD ~ this way } , the depth and concentration of the selectively doped silicon material layer may be controlled , while the underlying intrinsic silicon layer limits source / drain conduction to the substrate surface above { TAIL ~ the halo }
OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL