A method and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing charge on the surface of the oxide and heating the wafer to allow {HEAD ~ mobile ions} in {TAIL ~ the oxide} to drift 
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A method and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing charge on the surface of the oxide and heating the wafer to allow { HEAD ~ mobile ions } in { TAIL ~ the oxide } to drift
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