The epitaxial SiC single crystal substrate 1, wherein a buffer region layer is formed between said SiC epitaxial film and said SiC single crystal wafer, and carrier concentration in the buffer region layer gradually increases toward said SiC single crystal wafer side, and a rate of {HEAD ~ change} of {TAIL ~ said carrier concentration} is 80% or less per 0.5 μm in the depthwise direction 
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The epitaxial SiC single crystal substrate 1 , wherein a buffer region layer is formed between said SiC epitaxial film and said SiC single crystal wafer , and carrier concentration in the buffer region layer gradually increases toward said SiC single crystal wafer side , and a rate of { HEAD ~ change } of { TAIL ~ said carrier concentration } is 80 % or less per 0.5 μm in the depthwise direction
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