{TAIL ~ The zener diode} is composed of a p type doped region and {HEAD ~ an n type doped region}, wherein one of the doped regions, formed by deep diffusing impurities from a doped polysilicon layer, is arranged between two adjacent well regions 
{ TAIL ~ The zener diode } is composed of a p type doped region and { HEAD ~ an n type doped region } , wherein one of the doped regions , formed by deep diffusing impurities from a doped polysilicon layer , is arranged between two adjacent well regions
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