initially annealing said structure at a high temperature in the range of 900° C. to {TAIL ~ 1100° C.} to overcome any interfacial barrier to {HEAD ~ diffusion} of said impurity species into said structure and to form in a surface region of said structure a surface diffusion profile containing a high concentration of said impurity species, 
initially annealing said structure at a high temperature in the range of 900 ° C. to { TAIL ~ 1100 ° C. } to overcome any interfacial barrier to { HEAD ~ diffusion } of said impurity species into said structure and to form in a surface region of said structure a surface diffusion profile containing a high concentration of said impurity species ,
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH