The second array of bitlines and channel regions is orthogonally disposed relative to {HEAD ~ the wordline array} and the second array of bitlines is formed in {TAIL ~ a storage plane} over an interpolysilicon oxide dielectric isolation layer 
is formed in
The second array of bitlines and channel regions is orthogonally disposed relative to { HEAD ~ the wordline array } and the second array of bitlines is formed in { TAIL ~ a storage plane } over an interpolysilicon oxide dielectric isolation layer
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH