The mixture of silicon oxide and germanium oxide may be deposited over {HEAD ~ the underlying surface} on {TAIL ~ the integrated circuit structure} by a conventional chemical vapor deposition process, e.g., by flowing a mixture of silane and germane into a chamber maintained at atmospheric pressure or under vacuum, e.g., as low as a few Torr, while a wafer temperature of from about 20° C. to about 500° C., preferably from about 300° C. to about 450° C., is maintained 
on
The mixture of silicon oxide and germanium oxide may be deposited over { HEAD ~ the underlying surface } on { TAIL ~ the integrated circuit structure } by a conventional chemical vapor deposition process , e.g. , by flowing a mixture of silane and germane into a chamber maintained at atmospheric pressure or under vacuum , e.g. , as low as a few Torr , while a wafer temperature of from about 20 ° C. to about 500 ° C. , preferably from about 300 ° C. to about 450 ° C. , is maintained
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH