In one aspect, a method of depositing {HEAD ~ an aluminum nitride} comprising {TAIL ~ layer} over a semiconductor substrate includes positioning a semiconductor substrate within a chemical vapor deposition reactor 
comprising
In one aspect , a method of depositing { HEAD ~ an aluminum nitride } comprising { TAIL ~ layer } over a semiconductor substrate includes positioning a semiconductor substrate within a chemical vapor deposition reactor
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH