The precursor solution formulation enables {HEAD ~ the formation} of a film having {TAIL ~ a dielectric constant} less than 2.5, mechanical properties sufficient for IMD or PMD layers, and minimal levels of metal impurities  
The precursor solution formulation enables { HEAD ~ the formation } of a film having { TAIL ~ a dielectric constant } less than 2.5 , mechanical properties sufficient for IMD or PMD layers , and minimal levels of metal impurities
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH