In {HEAD ~ accordance} with {TAIL ~ the invention}, a range of possible threshold voltages for a memory cell in a multibit per cell memory is divided into allowed states associated with data values and forbidden zones between the allowed states 
with
In { HEAD ~ accordance } with { TAIL ~ the invention } , a range of possible threshold voltages for a memory cell in a multibit per cell memory is divided into allowed states associated with data values and forbidden zones between the allowed states
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