In the flash memory device, a common source line is formed to cross only with an isolation layer adjacent {TAIL ~ an active region} of a normal pattern forming {HEAD ~ memory cells} 
In the flash memory device , a common source line is formed to cross only with an isolation layer adjacent { TAIL ~ an active region } of a normal pattern forming { HEAD ~ memory cells }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD