A method of making an IGFET with {HEAD ~ a selectively doped multilevel polysilicon gate} that includes {TAIL ~ upper and lower polysilicon gate levels} is disclosed 
includes
A method of making an IGFET with { HEAD ~ a selectively doped multilevel polysilicon gate } that includes { TAIL ~ upper and lower polysilicon gate levels } is disclosed
OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH