{HEAD ~ The resulting structure} is then masked using {TAIL ~ a photoresist layer} 406, which is patterned to define contact areas 408 within which electrodes 111, 113, and 150 will make contact to vias 403.  
is masked using
{ HEAD ~ The resulting structure } is then masked using { TAIL ~ a photoresist layer } 406 , which is patterned to define contact areas 408 within which electrodes 111 , 113 , and 150 will make contact to vias 403 .
HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL OTH REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH