{HEAD ~ A transistor} has a JFET gate region of a first conductivity type formed at {TAIL ~ the face} of a semiconductor layer to laterally and downwardly surround a drift region of a second conductivity type 
{ HEAD ~ A transistor } has a JFET gate region of a first conductivity type formed at { TAIL ~ the face } of a semiconductor layer to laterally and downwardly surround a drift region of a second conductivity type
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH