{HEAD ~ A method} 3 wherein {TAIL ~ the irradiating step} of said second portion with the laser light is carried out after etching a silicon oxide film formed on the second portion of the semiconductor film due to the oxidizing step 
wherein
{ HEAD ~ A method } 3 wherein { TAIL ~ the irradiating step } of said second portion with the laser light is carried out after etching a silicon oxide film formed on the second portion of the semiconductor film due to the oxidizing step
HEAD HEAD HEAD HEAD HEAD HEAD OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH