According to the tunneling magnetic detecting element of {HEAD ~ the present invention}, the rate of change in resistance can be increased from the level of the existing technology without changing the configurations of {TAIL ~ the pinned magnetic layer} or the free magnetic layer from the existing technology 
According to the tunneling magnetic detecting element of { HEAD ~ the present invention } , the rate of change in resistance can be increased from the level of the existing technology without changing the configurations of { TAIL ~ the pinned magnetic layer } or the free magnetic layer from the existing technology
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