This invention relates to methods of depositing aluminum nitride comprising {TAIL ~ layers} over semiconductor substrates, to {HEAD ~ methods} of forming DRAM circuitry, to DRAM circuitry, to methods of forming field emission devices, and to field emission devices 
This invention relates to methods of depositing aluminum nitride comprising { TAIL ~ layers } over semiconductor substrates , to { HEAD ~ methods } of forming DRAM circuitry , to DRAM circuitry , to methods of forming field emission devices , and to field emission devices
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