The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing {HEAD ~ an alkoxy silane} represented by {TAIL ~ the general formula nSiH4−n} , and an oxidative gas by a plasma CVD 
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The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing { HEAD ~ an alkoxy silane } represented by { TAIL ~ the general formula nSiH4−n } , and an oxidative gas by a plasma CVD
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH