In order to make the high frequency power amplifier module small in size, a substrate side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from {HEAD ~ a side} of {TAIL ~ the semiconductor chip} than a substrate side output electrode electrically connected to an output wire 
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In order to make the high frequency power amplifier module small in size , a substrate side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from { HEAD ~ a side } of { TAIL ~ the semiconductor chip } than a substrate side output electrode electrically connected to an output wire
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