source and drain extension regions of a p type diffusion region formed in said silicon substrate at {HEAD ~ respective lateral sides} of {TAIL ~ said gate electrode} across said channel region 
of
source and drain extension regions of a p type diffusion region formed in said silicon substrate at { HEAD ~ respective lateral sides } of { TAIL ~ said gate electrode } across said channel region
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH