Subsequently, a mask 70, for example a photoresist mask, which comprises {TAIL ~ an opening} 72 in the area of {HEAD ~ the coil trace} 10, is formed on the surface 62 of the dielectric layer 60 
Subsequently , a mask 70 , for example a photoresist mask , which comprises { TAIL ~ an opening } 72 in the area of { HEAD ~ the coil trace } 10 , is formed on the surface 62 of the dielectric layer 60
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH