One may form the CTSL as part of {HEAD ~ a field effect transistor} wherein {TAIL ~ the CTSL} is part of the FET gate or form the CTSL as the cladding layers of a quantum wire laser having a GaAs active layer 
wherein
One may form the CTSL as part of { HEAD ~ a field effect transistor } wherein { TAIL ~ the CTSL } is part of the FET gate or form the CTSL as the cladding layers of a quantum wire laser having a GaAs active layer
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH