{HEAD ~ The memory device} 14, wherein said first column selection circuitry is selectively controlled by {TAIL ~ a row address bit} and a column address bit; and 
{ HEAD ~ The memory device } 14 , wherein said first column selection circuitry is selectively controlled by { TAIL ~ a row address bit } and a column address bit ; and
HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH