A method of forming an integrated circuit device includes the steps of forming a first insulating layer on an integrated circuit substrate, forming a first capacitor electrode on the insulating layer opposite the substrate, and forming {HEAD ~ a second insulating layer} on {TAIL ~ the first capacitor electrode} and on the insulating layer opposite the substrate 
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A method of forming an integrated circuit device includes the steps of forming a first insulating layer on an integrated circuit substrate , forming a first capacitor electrode on the insulating layer opposite the substrate , and forming { HEAD ~ a second insulating layer } on { TAIL ~ the first capacitor electrode } and on the insulating layer opposite the substrate
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