In {HEAD ~ further embodiments}, a method of writing to a resistive sense memory unit includes applying a first voltage across {TAIL ~ a bitline} BL and a sourceline SL, a resistive sense memory cell 10 and a semiconductor transistor 22 are in serial electrical connection electrically between the bitline BL and the sourceline SL 
In { HEAD ~ further embodiments } , a method of writing to a resistive sense memory unit includes applying a first voltage across { TAIL ~ a bitline } BL and a sourceline SL , a resistive sense memory cell 10 and a semiconductor transistor 22 are in serial electrical connection electrically between the bitline BL and the sourceline SL
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