The transistors from the pair in the first embodiment each also include {HEAD ~ an associated first gated diode structure} comprising an n type semiconductor region proximate to a p type semiconductor region proximate to {TAIL ~ a p type semiconductor region} so as to serve as the first source/drain region of a transistor of the pair 
The transistors from the pair in the first embodiment each also include { HEAD ~ an associated first gated diode structure } comprising an n type semiconductor region proximate to a p type semiconductor region proximate to { TAIL ~ a p type semiconductor region } so as to serve as the first source / drain region of a transistor of the pair
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH