Form over a substrate {TAIL ~ the combination} of a gate oxide layer and a gate layer patterned into gate stacks with sidewalls for {HEAD ~ an NMOS FET device} over a P well in the substrate and a PMOS FET device over an N well 
Form over a substrate { TAIL ~ the combination } of a gate oxide layer and a gate layer patterned into gate stacks with sidewalls for { HEAD ~ an NMOS FET device } over a P well in the substrate and a PMOS FET device over an N well
OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH