Moreover, the capacitor dielectric layer 122 can have a thickness in the range of 500 Angstroms to 1,000 Angstroms, and the dielectric layer can be a layer of silicon oxide formed by {TAIL ~ chemical vapor deposition}, silicon nitride formed by chemical vapor deposition, or tantalum oxide formed by {HEAD ~ physical vapor deposition} 
Moreover , the capacitor dielectric layer 122 can have a thickness in the range of 500 Angstroms to 1,000 Angstroms , and the dielectric layer can be a layer of silicon oxide formed by { TAIL ~ chemical vapor deposition } , silicon nitride formed by chemical vapor deposition , or tantalum oxide formed by { HEAD ~ physical vapor deposition }
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