The power semiconductor device 8, wherein said high impurity concentration {TAIL ~ well region} is not formed under said gate insulating film provided on {HEAD ~ said well region} 
The power semiconductor device 8 , wherein said high impurity concentration { TAIL ~ well region } is not formed under said gate insulating film provided on { HEAD ~ said well region }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD