According to {TAIL ~ first or second method} for fabricating a semiconductor device of this invention, rapid thermal annealing is carried out with a nonmetal element distributed in a region in the vicinity of the surface of a semiconductor layer, so as to cause a reaction between an element included in the semiconductor layer and {HEAD ~ a metal} included in a metal film 
According to { TAIL ~ first or second method } for fabricating a semiconductor device of this invention , rapid thermal annealing is carried out with a nonmetal element distributed in a region in the vicinity of the surface of a semiconductor layer , so as to cause a reaction between an element included in the semiconductor layer and { HEAD ~ a metal } included in a metal film
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