{TAIL ~ The sensor arrangement} 1, wherein the first pinning structure further comprises an even number of first anti ferromagnetic coupling layers, wherein each of the odd number of first ferromagnetic layers is separated from another of {HEAD ~ the odd number} of first ferromagnetic layers by at least one of the even number of first anti ferromagnetic coupling layers 
{ TAIL ~ The sensor arrangement } 1 , wherein the first pinning structure further comprises an even number of first anti ferromagnetic coupling layers , wherein each of the odd number of first ferromagnetic layers is separated from another of { HEAD ~ the odd number } of first ferromagnetic layers by at least one of the even number of first anti ferromagnetic coupling layers
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