wherein a mixed gas of Ar with a flow ratio of not more than 10% relative to a total plasma gas flow and CxHyFz that represents {HEAD ~ a fluorocarbon gas} is used as {TAIL ~ the plasma gas} for etching the organic anti reflection coating and a portion of the layer to be processed, and 
is used as
wherein a mixed gas of Ar with a flow ratio of not more than 10 % relative to a total plasma gas flow and CxHyFz that represents { HEAD ~ a fluorocarbon gas } is used as { TAIL ~ the plasma gas } for etching the organic anti reflection coating and a portion of the layer to be processed , and
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH