The present invention relates to a method for epitaxially growing {TAIL ~ a semiconductor metal compound layer}, in particular, a semiconductor metal compound layer with {HEAD ~ high crystal orientation}, in a surface portion of a semiconductor layer 
The present invention relates to a method for epitaxially growing { TAIL ~ a semiconductor metal compound layer } , in particular , a semiconductor metal compound layer with { HEAD ~ high crystal orientation } , in a surface portion of a semiconductor layer
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH