{HEAD ~ A capacitor} according to {TAIL ~ the present invention} enables the HSG layer to grow on an internal wall of a storage electrode, thereby preventing a micro bridge between storage electrodes resulting from abnormal growth or over growth of the HSG layer 
according to
{ HEAD ~ A capacitor } according to { TAIL ~ the present invention } enables the HSG layer to grow on an internal wall of a storage electrode , thereby preventing a micro bridge between storage electrodes resulting from abnormal growth or over growth of the HSG layer
HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH