a gate electrode formed over {HEAD ~ said silicon substrate} in {TAIL ~ correspondence} to said channel region via a gate insulation film, said gate electrode carrying sidewall insulation films on respective, mutually opposite sidewall surfaces thereof 
in
a gate electrode formed over { HEAD ~ said silicon substrate } in { TAIL ~ correspondence } to said channel region via a gate insulation film , said gate electrode carrying sidewall insulation films on respective , mutually opposite sidewall surfaces thereof
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH