A thin film polysilicon storage plane is formed over the gate oxide layer with {TAIL ~ a second array} of alternating parallel bitlines and channel regions formed in {HEAD ~ the thin film polysilicon storage plane} 
A thin film polysilicon storage plane is formed over the gate oxide layer with { TAIL ~ a second array } of alternating parallel bitlines and channel regions formed in { HEAD ~ the thin film polysilicon storage plane }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD