The semiconductor structure 3, wherein the single crystalline layer comprises, disposed between the nucleation layer and {TAIL ~ the bulk layer}, a transitional layer having {HEAD ~ a morphology} that is less pitted with increasing thickness 
The semiconductor structure 3 , wherein the single crystalline layer comprises , disposed between the nucleation layer and { TAIL ~ the bulk layer } , a transitional layer having { HEAD ~ a morphology } that is less pitted with increasing thickness
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH