The semiconductor device manufacturing method 1, wherein the under bump layer is formed from one of a single film and a laminate of a plurality of films made of one selected from {HEAD ~ a group} consisting of nickel, nickel alloy, copper and {TAIL ~ copper} alloy which are formed by sputtering 
consisting of
The semiconductor device manufacturing method 1 , wherein the under bump layer is formed from one of a single film and a laminate of a plurality of films made of one selected from { HEAD ~ a group } consisting of nickel , nickel alloy , copper and { TAIL ~ copper } alloy which are formed by sputtering
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