{HEAD ~ The present invention} is based on the finding of the inventors that at the lattice mismatching degree Δa/a between the GaInAs light absorbing layer and {TAIL ~ the InP buffer layer} in the positive range the dark current is lower than the negative range at room temperature 
{ HEAD ~ The present invention } is based on the finding of the inventors that at the lattice mismatching degree Δa / a between the GaInAs light absorbing layer and { TAIL ~ the InP buffer layer } in the positive range the dark current is lower than the negative range at room temperature
HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH