Subsequently, a mask 70, for example a photoresist mask, which comprises an opening 72 in {HEAD ~ the area} of {TAIL ~ the coil trace} 10, is formed on the surface 62 of the dielectric layer 60 
of
Subsequently , a mask 70 , for example a photoresist mask , which comprises an opening 72 in { HEAD ~ the area } of { TAIL ~ the coil trace } 10 , is formed on the surface 62 of the dielectric layer 60
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH