{HEAD ~ The precursor solution formulation} enables {TAIL ~ the formation} of a film having a dielectric constant less than 2.5, mechanical properties sufficient for IMD or PMD layers, and minimal levels of metal impurities  
enables
{ HEAD ~ The precursor solution formulation } enables { TAIL ~ the formation } of a film having a dielectric constant less than 2.5 , mechanical properties sufficient for IMD or PMD layers , and minimal levels of metal impurities
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH