The DMOS device 500 further includes a P type well {HEAD ~ 57 b} formed in {TAIL ~ the high voltage} well 54 beneath the body region 57 
formed in
The DMOS device 500 further includes a P type well { HEAD ~ 57 b } formed in { TAIL ~ the high voltage } well 54 beneath the body region 57
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH