The resistive sense memory cell 10 is electrically between {HEAD ~ the semiconductor transistor} 22 and {TAIL ~ the bitline} BL 
The resistive sense memory cell 10 is electrically between { HEAD ~ the semiconductor transistor } 22 and { TAIL ~ the bitline } BL
OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH