implanting dopant ions of the first conductivity type into {TAIL ~ the exposed portion} of the source/base region to form an anode region adjacent {HEAD ~ the second gate structure} in the exposed portion of the source/base region 
implanting dopant ions of the first conductivity type into { TAIL ~ the exposed portion } of the source / base region to form an anode region adjacent { HEAD ~ the second gate structure } in the exposed portion of the source / base region
OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH