initially annealing said structure at a high temperature in the range of {HEAD ~ 900° C.} to 1100° C. to overcome any interfacial barrier to diffusion of said impurity species into said structure and to form in a surface region of said structure a surface diffusion profile containing {TAIL ~ a high concentration} of said impurity species, 
initially annealing said structure at a high temperature in the range of { HEAD ~ 900 ° C. } to 1100 ° C. to overcome any interfacial barrier to diffusion of said impurity species into said structure and to form in a surface region of said structure a surface diffusion profile containing { TAIL ~ a high concentration } of said impurity species ,
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH