The method is useful in characterizing {HEAD ~ parameters} of {TAIL ~ field effect integrated circuit components} subject to various charge instability mechanisms and may also be useful as a means for altering charge conditions in various non volatile memory devices 
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The method is useful in characterizing { HEAD ~ parameters } of { TAIL ~ field effect integrated circuit components } subject to various charge instability mechanisms and may also be useful as a means for altering charge conditions in various non volatile memory devices
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH