doping first impurity elements at a first concentration providing n type into {HEAD ~ the semiconductor layer} using {TAIL ~ the gate electrode} as a mask to form a first n type impurity region 
using
doping first impurity elements at a first concentration providing n type into { HEAD ~ the semiconductor layer } using { TAIL ~ the gate electrode } as a mask to form a first n type impurity region
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH