A field effect device structure comprising a semiconductor p n junction adjacent to an insulated gate electrode is utilized in which {HEAD ~ a depletion region} is created under {TAIL ~ the gate electrode} in the presence of alternating forward and reverse biasing of the p n junction 
is created under
A field effect device structure comprising a semiconductor p n junction adjacent to an insulated gate electrode is utilized in which { HEAD ~ a depletion region } is created under { TAIL ~ the gate electrode } in the presence of alternating forward and reverse biasing of the p n junction
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH