The damage layer is formed on {TAIL ~ the silicon substrate} by dry etching a designated part of the silicon substrate, and {HEAD ~ the dual oxide layer} is formed by using the properties of SiO2 by which the oxide layer growth speed on the damage layer is slower than that on the silicon substrate 
The damage layer is formed on { TAIL ~ the silicon substrate } by dry etching a designated part of the silicon substrate , and { HEAD ~ the dual oxide layer } is formed by using the properties of SiO2 by which the oxide layer growth speed on the damage layer is slower than that on the silicon substrate
OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH