More specifically, {HEAD ~ the present invention} relates to {TAIL ~ an IGBT} with reduced channel length or deeper enhanced concentration region that improves Vce,on and that improves switching power loss 
relates to
More specifically , { HEAD ~ the present invention } relates to { TAIL ~ an IGBT } with reduced channel length or deeper enhanced concentration region that improves Vce , on and that improves switching power loss
OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH