The invention relates to {TAIL ~ a spin transfer MRAM cell} in which {HEAD ~ an upper CPP cell} is separated from a lower MTJ cell by a conducting layer in order to form different read and write paths, and each bit cell has two spin transfer MRAM cells that are written into opposite resistance states 
in
The invention relates to { TAIL ~ a spin transfer MRAM cell } in which { HEAD ~ an upper CPP cell } is separated from a lower MTJ cell by a conducting layer in order to form different read and write paths , and each bit cell has two spin transfer MRAM cells that are written into opposite resistance states
OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL REL OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH