Accordingly, stress voltage measurements at 10 V suggest that {HEAD ~ semiconductor devices} fabricated according to {TAIL ~ the example embodiment} of Sample 1 can provide a memory window of greater than 3.2 V 
fabricated according to
Accordingly , stress voltage measurements at 10 V suggest that { HEAD ~ semiconductor devices } fabricated according to { TAIL ~ the example embodiment } of Sample 1 can provide a memory window of greater than 3.2 V
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH