a first blocking layer formed on the conductive substrate, {HEAD ~ the first blocking layer} being formed of {TAIL ~ amorphous silicon carbide} or amorphous silicon nitride, and containing 1×10 4 to 1.0 atomic % of an element of Group III or V of the Periodic Table 
formed of
a first blocking layer formed on the conductive substrate , { HEAD ~ the first blocking layer } being formed of { TAIL ~ amorphous silicon carbide } or amorphous silicon nitride , and containing 1×10 4 to 1.0 atomic % of an element of Group III or V of the Periodic Table
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH