The transistors from the pair in {HEAD ~ the first embodiment} each also include an associated first gated diode structure comprising an n type semiconductor region proximate to a p type semiconductor region proximate to a p type semiconductor region so as to serve as the first source/drain region of a transistor of {TAIL ~ the pair} 
The transistors from the pair in { HEAD ~ the first embodiment } each also include an associated first gated diode structure comprising an n type semiconductor region proximate to a p type semiconductor region proximate to a p type semiconductor region so as to serve as the first source / drain region of a transistor of { TAIL ~ the pair }
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL