{HEAD ~ the insulative diffusion barrier layer} is formed to have a dielectric being 5 or less, a leak current at a test temperature of {TAIL ~ 140° C.}, under an electric field strength of 2 MV/cm being 10 nA or less per 1 cm2, and a dielectric breakdown lifetime when copper is used as an anode at a temperature of 140° C. being at least 100 years, and 
{ HEAD ~ the insulative diffusion barrier layer } is formed to have a dielectric being 5 or less , a leak current at a test temperature of { TAIL ~ 140 ° C. } , under an electric field strength of 2 MV / cm being 10 nA or less per 1 cm2 , and a dielectric breakdown lifetime when copper is used as an anode at a temperature of 140 ° C. being at least 100 years , and
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