Then {HEAD ~ the antireflection film} 7 of silicon nitride having a thickness of 1.8 μm is formed on {TAIL ~ the exposed surface} of the P+ type region 6 by plasma CVD 
is formed on
Then { HEAD ~ the antireflection film } 7 of silicon nitride having a thickness of 1.8 μm is formed on { TAIL ~ the exposed surface } of the P+ type region 6 by plasma CVD
OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH