each of gate electrodes of said third and fourth P channel MOS transistors is connected to {HEAD ~ a connection node} between said {TAIL ~ third P channel MOS transistor} and said third N channel MOS transistor 
between
each of gate electrodes of said third and fourth P channel MOS transistors is connected to { HEAD ~ a connection node } between said { TAIL ~ third P channel MOS transistor } and said third N channel MOS transistor
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH