{TAIL ~ The present invention} is generally related to integrated circuit structures, and more particularly, to {HEAD ~ a one time programmable Metal Oxide Semiconductor Field Effect Transistor} that is programmed by an electromigration mechanism 
{ TAIL ~ The present invention } is generally related to integrated circuit structures , and more particularly , to { HEAD ~ a one time programmable Metal Oxide Semiconductor Field Effect Transistor } that is programmed by an electromigration mechanism
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