In order to make the high frequency power amplifier module small in size, a substrate side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than {HEAD ~ a substrate side output electrode} electrically connected to {TAIL ~ an output wire} 
electrically connected to
In order to make the high frequency power amplifier module small in size , a substrate side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than { HEAD ~ a substrate side output electrode } electrically connected to { TAIL ~ an output wire }
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