with respect to {HEAD ~ the p channel MOS} and by silicate glass, such as AsSG, PSG, etc., with respect to the n channel MOS to implement a high temperature and short time {TAIL ~ heat process} by using the RTA process to thereby carry out solid phase diffusion from the side walls to form a diffused layer shallower than a diffused layer by ion implantation and RTA 
with respect to { HEAD ~ the p channel MOS } and by silicate glass , such as AsSG , PSG , etc . , with respect to the n channel MOS to implement a high temperature and short time { TAIL ~ heat process } by using the RTA process to thereby carry out solid phase diffusion from the side walls to form a diffused layer shallower than a diffused layer by ion implantation and RTA
OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH