Accordingly, it is {HEAD ~ an object} of {TAIL ~ the present invention} to provide an improved semiconductor memory device and a fabrication method thereof which is capable of lessening the parasitic capacitance formed due to polysilicon and impurity areas 
of
Accordingly , it is { HEAD ~ an object } of { TAIL ~ the present invention } to provide an improved semiconductor memory device and a fabrication method thereof which is capable of lessening the parasitic capacitance formed due to polysilicon and impurity areas
OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH