More particularly, the present invention relates to dry plasma etching processes for etching multiple layers of semiconductor material formed on {HEAD ~ a semiconductor wafer} in order to produce {TAIL ~ vertical sidewall structures} 
More particularly , the present invention relates to dry plasma etching processes for etching multiple layers of semiconductor material formed on { HEAD ~ a semiconductor wafer } in order to produce { TAIL ~ vertical sidewall structures }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL