A double diffused metal oxide semiconductor device formed in {HEAD ~ a first conductive type substrate}, wherein the substrate has {TAIL ~ an upper surface}, the DMOS device comprising: 
A double diffused metal oxide semiconductor device formed in { HEAD ~ a first conductive type substrate } , wherein the substrate has { TAIL ~ an upper surface } , the DMOS device comprising :
OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH