Then the antireflection film 7 of silicon nitride having {TAIL ~ a thickness} of {HEAD ~ 1.8 μm} is formed on the exposed surface of the P+ type region 6 by plasma CVD 
Then the antireflection film 7 of silicon nitride having { TAIL ~ a thickness } of { HEAD ~ 1.8 μm } is formed on the exposed surface of the P+ type region 6 by plasma CVD
OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH