According to the present invention, it is possible to reduce the occurrence of threading edge dislocation arrays in {HEAD ~ SiC epitaxial film} of {TAIL ~ epitaxial SiC} single crystal substrates 
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According to the present invention , it is possible to reduce the occurrence of threading edge dislocation arrays in { HEAD ~ SiC epitaxial film } of { TAIL ~ epitaxial SiC } single crystal substrates
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH