The inventors discovered that in a nitride semiconductor substrate of, for example, AlxGayIn1−N , having a physically flat principal surface, by controlling local variation Δθ in off axis angle θ within that principal surface, {TAIL ~ predetermined choice properties} are obtained for {HEAD ~ a substrate}, as described below 
The inventors discovered that in a nitride semiconductor substrate of , for example , AlxGayIn1−N , having a physically flat principal surface , by controlling local variation Δθ in off axis angle θ within that principal surface , { TAIL ~ predetermined choice properties } are obtained for { HEAD ~ a substrate } , as described below
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