Embodiments of the present invention are directed to non volatile memory devices capable of improving {HEAD ~ threshold voltage changes} by increasing {TAIL ~ effective channel length}, and a method for fabricating the same 
by increasing
Embodiments of the present invention are directed to non volatile memory devices capable of improving { HEAD ~ threshold voltage changes } by increasing { TAIL ~ effective channel length } , and a method for fabricating the same
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH