{HEAD ~ A field effect device structure} comprising {TAIL ~ a semiconductor p n junction} adjacent to an insulated gate electrode is utilized in which a depletion region is created under the gate electrode in the presence of alternating forward and reverse biasing of the p n junction 
comprising
{ HEAD ~ A field effect device structure } comprising { TAIL ~ a semiconductor p n junction } adjacent to an insulated gate electrode is utilized in which a depletion region is created under the gate electrode in the presence of alternating forward and reverse biasing of the p n junction
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