After {HEAD ~ a self aligned, silicide layer} has been formed over {TAIL ~ already fabricated polysilicon and diffusion regions}, a 750 Angstrom layer of silicon nitride is deposited by low pressure chemical vapor deposition 
formed over
After { HEAD ~ a self aligned , silicide layer } has been formed over { TAIL ~ already fabricated polysilicon and diffusion regions } , a 750 Angstrom layer of silicon nitride is deposited by low pressure chemical vapor deposition
OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH