The present invention relates to {HEAD ~ processes} for making {TAIL ~ semiconductor devices}, and more particularly to processes for forming MOS field effect transistors having a lightly doped drain in a high density device 
for making
The present invention relates to { HEAD ~ processes } for making { TAIL ~ semiconductor devices } , and more particularly to processes for forming MOS field effect transistors having a lightly doped drain in a high density device
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH