preparing a SiC single crystal wafer whose main surface is a c plane or whose main surface is a surface which inclines {HEAD ~ a c plane} with {TAIL ~ an angle} of inclination of more than 0 degrees but less than 10 degrees 
with
preparing a SiC single crystal wafer whose main surface is a c plane or whose main surface is a surface which inclines { HEAD ~ a c plane } with { TAIL ~ an angle } of inclination of more than 0 degrees but less than 10 degrees
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH