{HEAD ~ The metallization line} defining at least one interconnect feature having a first thickness, and depositing {TAIL ~ a first silicon nitride barrier layer} having a second thickness over the substrate and the metallization line 
depositing
{ HEAD ~ The metallization line } defining at least one interconnect feature having a first thickness , and depositing { TAIL ~ a first silicon nitride barrier layer } having a second thickness over the substrate and the metallization line
HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH