More particularly, embodiments of the present invention relate to methods of fabricating gated lateral thyristor based random access memory devices used in semiconductor memory devices, and to memory cell structures and {HEAD ~ memory devices} which implement {TAIL ~ such GLTRAM devices} 
implement
More particularly , embodiments of the present invention relate to methods of fabricating gated lateral thyristor based random access memory devices used in semiconductor memory devices , and to memory cell structures and { HEAD ~ memory devices } which implement { TAIL ~ such GLTRAM devices }
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