Thus, {HEAD ~ a semiconductor substrate} including a recrystallized semiconductor film having {TAIL ~ removed sub grain boundaries} generated during the zone melting recrystallization, is obtained by fewer process steps than in the prior art 
Thus , { HEAD ~ a semiconductor substrate } including a recrystallized semiconductor film having { TAIL ~ removed sub grain boundaries } generated during the zone melting recrystallization , is obtained by fewer process steps than in the prior art
OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH