The substrate processing method 1, wherein the first high frequency power is equal to or greater than 100 W and equal to or smaller than 500 W and {HEAD ~ the second high frequency power} is equal to or greater than 1000 W and equal to or smaller than {TAIL ~ 2400 W} 
is smaller than
The substrate processing method 1 , wherein the first high frequency power is equal to or greater than 100 W and equal to or smaller than 500 W and { HEAD ~ the second high frequency power } is equal to or greater than 1000 W and equal to or smaller than { TAIL ~ 2400 W }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL REL TAIL TAIL TAIL TAIL TAIL TAIL