Even more particularly, the present invention applies industrially to {HEAD ~ non overly destructive dry plasma} etching processes, i.e., those which damage neither the sidewalls of the semiconductor structure nor {TAIL ~ the surface} of the semiconductor wafer 
Even more particularly , the present invention applies industrially to { HEAD ~ non overly destructive dry plasma } etching processes , i.e. , those which damage neither the sidewalls of the semiconductor structure nor { TAIL ~ the surface } of the semiconductor wafer
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH