The damage layer is formed on the silicon substrate by dry etching a designated part of the silicon substrate, and the dual oxide layer is formed by using {HEAD ~ the properties} of {TAIL ~ SiO2} by which the oxide layer growth speed on the damage layer is slower than that on the silicon substrate 
of
The damage layer is formed on the silicon substrate by dry etching a designated part of the silicon substrate , and the dual oxide layer is formed by using { HEAD ~ the properties } of { TAIL ~ SiO2 } by which the oxide layer growth speed on the damage layer is slower than that on the silicon substrate
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH