The device source is then formed by an arsenic source implanted at {TAIL ~ 3 E15} followed by {HEAD ~ an anneal temperature} greater than about 975° C 
The device source is then formed by an arsenic source implanted at { TAIL ~ 3 E15 } followed by { HEAD ~ an anneal temperature } greater than about 975 ° C
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH