Thus a semiconductor device can be obtained capable of reducing a compressive stress caused in {HEAD ~ the semiconductor substrate} near {TAIL ~ an element isolating trench region} to minimize formation of crystal defect 
Thus a semiconductor device can be obtained capable of reducing a compressive stress caused in { HEAD ~ the semiconductor substrate } near { TAIL ~ an element isolating trench region } to minimize formation of crystal defect
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH