Therefore, the metal included in the metal film and {HEAD ~ the element} included in {TAIL ~ the semiconductor layer} can be prevented from too rapidly reacting with each other 
included in
Therefore , the metal included in the metal film and { HEAD ~ the element } included in { TAIL ~ the semiconductor layer } can be prevented from too rapidly reacting with each other
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH