Therefore, the method provides structures for i) an insulating film of an NDRO type ferroelectric memory device that has a structure of Metal film/Ferroelectric film/Insulating film/Silicon, ii) a gate oxide film substituting for silicon oxide film, and {HEAD ~ iii) an insulating film} of {TAIL ~ Electro Luminescent Display device} 
of
Therefore , the method provides structures for i ) an insulating film of an NDRO type ferroelectric memory device that has a structure of Metal film / Ferroelectric film / Insulating film / Silicon , ii ) a gate oxide film substituting for silicon oxide film , and { HEAD ~ iii ) an insulating film } of { TAIL ~ Electro Luminescent Display device }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL