A substrate processing method is provided to process {HEAD ~ a substrate} having {TAIL ~ a structure} in which a lower photoresist layer, a hard mask layer containing silicon, and an upper photoresist layer are sequentially formed on a target layer to be processed 
having
A substrate processing method is provided to process { HEAD ~ a substrate } having { TAIL ~ a structure } in which a lower photoresist layer , a hard mask layer containing silicon , and an upper photoresist layer are sequentially formed on a target layer to be processed
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH