The semiconductor read only memory according to this invention includes a plurality of MOS transistors formed on a substrate and silicon resistances of polycrystal or amorphous connected to the source region and {HEAD ~ the drain region} of {TAIL ~ the MOS transistors} 
of
The semiconductor read only memory according to this invention includes a plurality of MOS transistors formed on a substrate and silicon resistances of polycrystal or amorphous connected to the source region and { HEAD ~ the drain region } of { TAIL ~ the MOS transistors }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL