For a rare gas to be used at {HEAD ~ the time} of processing {TAIL ~ the insulating film}, any one of Xe, Kr, a mixed gas of Ar and Xe, and a mixed gas of Ar and Kr is applied in place of Ar, giving rise to reduction in pitting and striations after etching 
of processing
For a rare gas to be used at { HEAD ~ the time } of processing { TAIL ~ the insulating film } , any one of Xe , Kr , a mixed gas of Ar and Xe , and a mixed gas of Ar and Kr is applied in place of Ar , giving rise to reduction in pitting and striations after etching
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH