{HEAD ~ The method} is useful in characterizing parameters of field effect integrated circuit components subject to various charge instability mechanisms and may also be useful as {TAIL ~ a means} for altering charge conditions in various non volatile memory devices 
useful as
{ HEAD ~ The method } is useful in characterizing parameters of field effect integrated circuit components subject to various charge instability mechanisms and may also be useful as { TAIL ~ a means } for altering charge conditions in various non volatile memory devices
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH