{HEAD ~ Source and drain regions} of field effect transistors are fabricated with {TAIL ~ an electrically insulating layer} formed thereunder so as to reduce junction capacitance between each and a semiconductor body in which the regions are formed 
are fabricated with
{ HEAD ~ Source and drain regions } of field effect transistors are fabricated with { TAIL ~ an electrically insulating layer } formed thereunder so as to reduce junction capacitance between each and a semiconductor body in which the regions are formed
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH