Even more particularly, the present invention applies industrially to {HEAD ~ non overly destructive dry plasma} etching {TAIL ~ processes}, i.e., those which damage neither the sidewalls of the semiconductor structure nor the surface of the semiconductor wafer 
etching
Even more particularly , the present invention applies industrially to { HEAD ~ non overly destructive dry plasma } etching { TAIL ~ processes } , i.e. , those which damage neither the sidewalls of the semiconductor structure nor the surface of the semiconductor wafer
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH