The metallization line defining {HEAD ~ at least one interconnect feature} having {TAIL ~ a first thickness}, and depositing a first silicon nitride barrier layer having a second thickness over the substrate and the metallization line 
having
The metallization line defining { HEAD ~ at least one interconnect feature } having { TAIL ~ a first thickness } , and depositing a first silicon nitride barrier layer having a second thickness over the substrate and the metallization line
OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH