{HEAD ~ A silicon substrate} covered with {TAIL ~ a polycrystalline silicon film} is thermally oxidized at 900 to 1100° C. in an oxygen ambient to provide an uneven interface between a thermally oxidized silicon film and the silicon substrate 
covered with
{ HEAD ~ A silicon substrate } covered with { TAIL ~ a polycrystalline silicon film } is thermally oxidized at 900 to 1100 ° C. in an oxygen ambient to provide an uneven interface between a thermally oxidized silicon film and the silicon substrate
HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH