{HEAD ~ The method} includes applying a first gate voltage across a gate of the semiconductor transistor 22 to allow the first voltage to form a first write current first time duration from the sourceline SL to the bitline BL and writing {TAIL ~ a first data state} to the resistive sense memory cell 10 
includes writing
{ HEAD ~ The method } includes applying a first gate voltage across a gate of the semiconductor transistor 22 to allow the first voltage to form a first write current first time duration from the sourceline SL to the bitline BL and writing { TAIL ~ a first data state } to the resistive sense memory cell 10
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