A pattern of the damage layer is defined by photolithography, and the damage layer having a depth of about 20 to 5,000 Å is formed using CF4, CHF3, or {HEAD ~ Ar gas} at a pressure of 900 mTorr or less, or using {TAIL ~ Cl2} or HBr 
A pattern of the damage layer is defined by photolithography , and the damage layer having a depth of about 20 to 5,000 Å is formed using CF4 , CHF3 , or { HEAD ~ Ar gas } at a pressure of 900 mTorr or less , or using { TAIL ~ Cl2 } or HBr
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL OTH OTH