Thus {HEAD ~ a semiconductor device} can be obtained capable of reducing a compressive stress caused in the semiconductor substrate near an element isolating trench region to minimize formation of {TAIL ~ crystal defect} 
Thus { HEAD ~ a semiconductor device } can be obtained capable of reducing a compressive stress caused in the semiconductor substrate near an element isolating trench region to minimize formation of { TAIL ~ crystal defect }
OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL