Thus, a semiconductor substrate including a recrystallized semiconductor film having removed sub grain boundaries generated during the zone melting recrystallization, is obtained by {HEAD ~ fewer process steps} than in {TAIL ~ the prior art} 
than in
Thus , a semiconductor substrate including a recrystallized semiconductor film having removed sub grain boundaries generated during the zone melting recrystallization , is obtained by { HEAD ~ fewer process steps } than in { TAIL ~ the prior art }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL