A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes {HEAD ~ the growth mode} from {TAIL ~ the substantially 3D growth mode} to a substantially 2D growth mode 
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A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes { HEAD ~ the growth mode } from { TAIL ~ the substantially 3D growth mode } to a substantially 2D growth mode
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH