The method includes applying a first gate voltage across a gate of the semiconductor transistor 22 to allow the first voltage to form {HEAD ~ a first write current first time duration} from the sourceline SL to {TAIL ~ the bitline} BL and writing a first data state to the resistive sense memory cell 10 
to
The method includes applying a first gate voltage across a gate of the semiconductor transistor 22 to allow the first voltage to form { HEAD ~ a first write current first time duration } from the sourceline SL to { TAIL ~ the bitline } BL and writing a first data state to the resistive sense memory cell 10
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH