The method for bonding a semiconductor structure with a substrate 9, wherein {HEAD ~ the composite bonding layer} is made by material that contains gallium and is selected from the group including: {TAIL ~ indium gallium}, zinc gallium, tin gallium, gold gallium, silver gallium, platinum gallium, bismuth gallium, indium gallium tin, indium gallium indium, zinc gallium zinc, indium gallium silver, and indium gallium gold 
The method for bonding a semiconductor structure with a substrate 9 , wherein { HEAD ~ the composite bonding layer } is made by material that contains gallium and is selected from the group including : { TAIL ~ indium gallium } , zinc gallium , tin gallium , gold gallium , silver gallium , platinum gallium , bismuth gallium , indium gallium tin , indium gallium indium , zinc gallium zinc , indium gallium silver , and indium gallium gold
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH