Form over a substrate the combination of a gate oxide layer and a gate layer patterned into gate stacks with {HEAD ~ sidewalls} for {TAIL ~ an NMOS FET device} over a P well in the substrate and a PMOS FET device over an N well 
for
Form over a substrate the combination of a gate oxide layer and a gate layer patterned into gate stacks with { HEAD ~ sidewalls } for { TAIL ~ an NMOS FET device } over a P well in the substrate and a PMOS FET device over an N well
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH