More specifically, the present invention relates to an IGBT with reduced channel length or {HEAD ~ deeper enhanced concentration region} that improves {TAIL ~ Vce,on} and that improves switching power loss 
improves
More specifically , the present invention relates to an IGBT with reduced channel length or { HEAD ~ deeper enhanced concentration region } that improves { TAIL ~ Vce , on } and that improves switching power loss
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH