The flow of {TAIL ~ reactant gases} is maintained and {HEAD ~ the temperature} of 425° C. is maintained until a desired thickness of borophosphosilicate glass is formed on the wafer 
The flow of { TAIL ~ reactant gases } is maintained and { HEAD ~ the temperature } of 425 ° C. is maintained until a desired thickness of borophosphosilicate glass is formed on the wafer
OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH