{HEAD ~ The oscillator} 1, wherein the insulating layer is {TAIL ~ an oxide}, a nitride or an oxynitride containing at least one element selected from the group consisting of Al, Hf, Zr, Ti, Ta, Mo, W, Nb and Si 
{ HEAD ~ The oscillator } 1 , wherein the insulating layer is { TAIL ~ an oxide } , a nitride or an oxynitride containing at least one element selected from the group consisting of Al , Hf , Zr , Ti , Ta , Mo , W , Nb and Si
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH