Using this precursor solution formulation enables {HEAD ~ formation} of {TAIL ~ a film} having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities 
of
Using this precursor solution formulation enables { HEAD ~ formation } of { TAIL ~ a film } having a dielectric constant less than 2.5 , appropriate mechanical properties , and minimal levels of alkali metal impurities
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH