According to the power semiconductor device in accordance with the present invention, also in the case in which the power semiconductor device is driven at a high speed, it is possible to suppress a dielectric breakdown of a gate insulating {HEAD ~ film} without applying an electric field having a high intensity to {TAIL ~ the gate} insulating film, thereby obtaining a higher reliability 
According to the power semiconductor device in accordance with the present invention , also in the case in which the power semiconductor device is driven at a high speed , it is possible to suppress a dielectric breakdown of a gate insulating { HEAD ~ film } without applying an electric field having a high intensity to { TAIL ~ the gate } insulating film , thereby obtaining a higher reliability
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH