forming a via hole through the second silicon nitride layer, the applied oxide material and the first silicon nitride layer down to the underlying metallization line, the via hole having {HEAD ~ walls} that are substantially adjacent to {TAIL ~ the moisture repelling barrier} 
are substantially adjacent to
forming a via hole through the second silicon nitride layer , the applied oxide material and the first silicon nitride layer down to the underlying metallization line , the via hole having { HEAD ~ walls } that are substantially adjacent to { TAIL ~ the moisture repelling barrier }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH REL REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL