At this time, a decreasing step is performed with a step for removing {TAIL ~ an impurity concentrating film} on the surface of a silicon wafer, such as an oxide film, depending on the surface state of {HEAD ~ the silicon water} 
At this time , a decreasing step is performed with a step for removing { TAIL ~ an impurity concentrating film } on the surface of a silicon wafer , such as an oxide film , depending on the surface state of { HEAD ~ the silicon water }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD