The invention is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate, a method of forming DRAM circuitry, DRAM circuitry, {HEAD ~ a method} of forming {TAIL ~ a field emission device}, and a field emission device 
of forming
The invention is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate , a method of forming DRAM circuitry , DRAM circuitry , { HEAD ~ a method } of forming { TAIL ~ a field emission device } , and a field emission device
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