The method 1, wherein {HEAD ~ the resistor material} comprises {TAIL ~ tantalum nitride} and the dielectric layer comprises a polymer 
comprises
The method 1 , wherein { HEAD ~ the resistor material } comprises { TAIL ~ tantalum nitride } and the dielectric layer comprises a polymer
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH