The variable resistive elements of {HEAD ~ all memory cells} in {TAIL ~ the memory cell array} are set to the highest of the two or more different resistance states in an unused state before the memory cell array is used to store the user data 
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The variable resistive elements of { HEAD ~ all memory cells } in { TAIL ~ the memory cell array } are set to the highest of the two or more different resistance states in an unused state before the memory cell array is used to store the user data
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH