{HEAD ~ The production method} 7 comprising epitaxially growing {TAIL ~ a third semiconductor film} on the remaining portions of said first semiconductor film and on exposed portions of said first insulating film after completely removing said second insulating film 
comprising epitaxially growing
{ HEAD ~ The production method } 7 comprising epitaxially growing { TAIL ~ a third semiconductor film } on the remaining portions of said first semiconductor film and on exposed portions of said first insulating film after completely removing said second insulating film
HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH