Even more particularly, {HEAD ~ the present invention} relates to non overly destructive dry plasma etching processes, i.e., those which damage neither the sidewalls of the semiconductor structures nor the surface of {TAIL ~ the semiconductor wafer} 
Even more particularly , { HEAD ~ the present invention } relates to non overly destructive dry plasma etching processes , i.e. , those which damage neither the sidewalls of the semiconductor structures nor the surface of { TAIL ~ the semiconductor wafer }
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