Using the method for forming the self aligned contact window, {HEAD ~ a silicide layer} can be easily formed at {TAIL ~ the peripheral circuit area} where a logic circuit is formed and at the cell array region where a memory element is formed 
easily formed at
Using the method for forming the self aligned contact window , { HEAD ~ a silicide layer } can be easily formed at { TAIL ~ the peripheral circuit area } where a logic circuit is formed and at the cell array region where a memory element is formed
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH