In the second diffused region, {HEAD ~ a distribution} in a depth direction of carriers has {TAIL ~ a profile} in which the concentration is more than 5×1018 cm 3 at the peak and is in correspondence with a carrier concentration of the semiconductor substrate at a depth less than 0.04 μm 
has
In the second diffused region , { HEAD ~ a distribution } in a depth direction of carriers has { TAIL ~ a profile } in which the concentration is more than 5×1018 cm 3 at the peak and is in correspondence with a carrier concentration of the semiconductor substrate at a depth less than 0.04 μm
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH