The resulting structure is then masked using {HEAD ~ a photoresist layer} 406, which is patterned to define {TAIL ~ contact areas} 408 within which electrodes 111, 113, and 150 will make contact to vias 403.  
is patterned to define
The resulting structure is then masked using { HEAD ~ a photoresist layer } 406 , which is patterned to define { TAIL ~ contact areas } 408 within which electrodes 111 , 113 , and 150 will make contact to vias 403 .
OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH REL REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH