Embodiments of the invention provide {TAIL ~ methods} of forming a titanium nitride layer that suppress the generation of hafnium chloride on a surface of a hafnium oxide layer, and {HEAD ~ methods} of fabricating a storage capacitor having the titanium nitride layer 
Embodiments of the invention provide { TAIL ~ methods } of forming a titanium nitride layer that suppress the generation of hafnium chloride on a surface of a hafnium oxide layer , and { HEAD ~ methods } of fabricating a storage capacitor having the titanium nitride layer
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