A pattern of the damage layer is defined by {HEAD ~ photolithography}, and the damage layer having a depth of about 20 to 5,000 Å is formed using CF4, CHF3, or {TAIL ~ Ar gas} at a pressure of 900 mTorr or less, or using Cl2 or HBr 
A pattern of the damage layer is defined by { HEAD ~ photolithography } , and the damage layer having a depth of about 20 to 5,000 Å is formed using CF4 , CHF3 , or { TAIL ~ Ar gas } at a pressure of 900 mTorr or less , or using Cl2 or HBr
OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH