Advantages of {HEAD ~ preferred embodiments} of {TAIL ~ the present invention} include providing methods of patterning MTJs of MRAM devices wherein a wet etch process may be used to pattern the top magnetic material layer 
of
Advantages of { HEAD ~ preferred embodiments } of { TAIL ~ the present invention } include providing methods of patterning MTJs of MRAM devices wherein a wet etch process may be used to pattern the top magnetic material layer
OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH