the insulative diffusion barrier layer is formed to have a dielectric being 5 or less, a leak current at a test temperature of 140° C., under an electric field strength of 2 MV/cm being 10 nA or less per 1 cm2, and a dielectric breakdown lifetime when copper is used as an anode at {HEAD ~ a temperature} of {TAIL ~ 140° C.} being at least 100 years, and 
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the insulative diffusion barrier layer is formed to have a dielectric being 5 or less , a leak current at a test temperature of 140 ° C. , under an electric field strength of 2 MV / cm being 10 nA or less per 1 cm2 , and a dielectric breakdown lifetime when copper is used as an anode at { HEAD ~ a temperature } of { TAIL ~ 140 ° C. } being at least 100 years , and
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