More particularly, the present invention relates to dry plasma etching processes for etching {HEAD ~ multiple layers} of semiconductor material formed on a semiconductor wafer in {TAIL ~ order} to produce vertical sidewall structures 
More particularly , the present invention relates to dry plasma etching processes for etching { HEAD ~ multiple layers } of semiconductor material formed on a semiconductor wafer in { TAIL ~ order } to produce vertical sidewall structures
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH