In the flash memory device, a common source line is formed to cross only with an isolation layer adjacent {HEAD ~ an active region} of {TAIL ~ a normal pattern} forming memory cells 
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In the flash memory device , a common source line is formed to cross only with an isolation layer adjacent { HEAD ~ an active region } of { TAIL ~ a normal pattern } forming memory cells
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH