Thereby, in practice, the composite bonding layers 3 made by above material with melting point between 30° C. to 500° C. are piled in sequence on the epitaxial layers 11 of the semiconductor structure 1 under low temperature environment by {HEAD ~ means} of {TAIL ~ methods} such as sputtering or evaporation 
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Thereby , in practice , the composite bonding layers 3 made by above material with melting point between 30 ° C. to 500 ° C. are piled in sequence on the epitaxial layers 11 of the semiconductor structure 1 under low temperature environment by { HEAD ~ means } of { TAIL ~ methods } such as sputtering or evaporation
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH