In a process for producing {HEAD ~ an electro electricity generating device}, there has been known that a reflection layer of, e.g., {TAIL ~ metal} is formed on the back side of an semiconductor layer in order to improve a light collection efficiency of the photo electricity generating device on a long wavelength 
In a process for producing { HEAD ~ an electro electricity generating device } , there has been known that a reflection layer of , e.g. , { TAIL ~ metal } is formed on the back side of an semiconductor layer in order to improve a light collection efficiency of the photo electricity generating device on a long wavelength
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