In view of the above, the present invention is characterized in that in {HEAD ~ a manufacturing process} of semiconductor devices integrated on a single substrate, {TAIL ~ laser light} is selectively applied to the substrate at different illumination energies that are determined in accordance with required semiconductor characteristics 
In view of the above , the present invention is characterized in that in { HEAD ~ a manufacturing process } of semiconductor devices integrated on a single substrate , { TAIL ~ laser light } is selectively applied to the substrate at different illumination energies that are determined in accordance with required semiconductor characteristics
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