Finally, the compound semiconductor substrate 10 is removed by means of methods , so that {HEAD ~ the epitaxial layers} 11 grown on the compound semiconductor substrate 10 can be transferred onto the substrate 2 to form {TAIL ~ a high efficiency photonic device} 5 
Finally , the compound semiconductor substrate 10 is removed by means of methods , so that { HEAD ~ the epitaxial layers } 11 grown on the compound semiconductor substrate 10 can be transferred onto the substrate 2 to form { TAIL ~ a high efficiency photonic device } 5
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH