A gate structure and a cap layer are formed, wherein the gate structure is disposed across parts of the fin shaped structure and parts of the substrate, the cap layer is on the gate structure, and {HEAD ~ the cap layer} includes {TAIL ~ a first cap layer} on the gate structure and a second cap layer on the first cap layer 
includes
A gate structure and a cap layer are formed , wherein the gate structure is disposed across parts of the fin shaped structure and parts of the substrate , the cap layer is on the gate structure , and { HEAD ~ the cap layer } includes { TAIL ~ a first cap layer } on the gate structure and a second cap layer on the first cap layer
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