In {TAIL ~ the aforementioned embodiment}, {HEAD ~ the DMOS device} may include a plurality of the first buried layers, preferably each having a second conductive type impurity density higher than that of the high voltage well 
In
In { TAIL ~ the aforementioned embodiment } , { HEAD ~ the DMOS device } may include a plurality of the first buried layers , preferably each having a second conductive type impurity density higher than that of the high voltage well
REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH