The present invention relates generally to semiconductor memory devices, and in particular, {HEAD ~ the present invention} relates to {TAIL ~ floating gate memory devices} having carbon nanotubes 
relates to
The present invention relates generally to semiconductor memory devices , and in particular , { HEAD ~ the present invention } relates to { TAIL ~ floating gate memory devices } having carbon nanotubes
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH