A drain region and a source/base region are formed in {HEAD ~ the semiconductor substrate} adjacent the first gate structure and a cathode region is formed in the semiconductor substrate adjacent {TAIL ~ the second gate structure} 
A drain region and a source / base region are formed in { HEAD ~ the semiconductor substrate } adjacent the first gate structure and a cathode region is formed in the semiconductor substrate adjacent { TAIL ~ the second gate structure }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL