{HEAD ~ The thin film transistor} 1, wherein the channel layer, a gate insulating film and gate electrode are stacked on and above {TAIL ~ a substrate} in this order 
{ HEAD ~ The thin film transistor } 1 , wherein the channel layer , a gate insulating film and gate electrode are stacked on and above { TAIL ~ a substrate } in this order
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH