A method of dry plasma etching a semiconductor structure , having at least one semiconductor material layer , on a semiconductor wafer , involving a dry plasma reaction gas mixture being chemically selected for, and having {HEAD ~ an etch rate} corresponding to, {TAIL ~ each semiconductor material layer} ; dividing the semiconductor structure into a masked portion and an unmasked portion ; and sequentially exposing the unmasked portion of the semiconductor structure to the dry plasma reaction gas mixture  
corresponding to
A method of dry plasma etching a semiconductor structure , having at least one semiconductor material layer , on a semiconductor wafer , involving a dry plasma reaction gas mixture being chemically selected for , and having { HEAD ~ an etch rate } corresponding to , { TAIL ~ each semiconductor material layer } ; dividing the semiconductor structure into a masked portion and an unmasked portion ; and sequentially exposing the unmasked portion of the semiconductor structure to the dry plasma reaction gas mixture
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH