A pattern of the damage layer is defined by photolithography, and the damage layer having {HEAD ~ a depth} of {TAIL ~ about 20 to 5,000 Å} is formed using CF4, CHF3, or Ar gas at a pressure of 900 mTorr or less, or using Cl2 or HBr 
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A pattern of the damage layer is defined by photolithography , and the damage layer having { HEAD ~ a depth } of { TAIL ~ about 20 to 5,000 Å } is formed using CF4 , CHF3 , or Ar gas at a pressure of 900 mTorr or less , or using Cl2 or HBr
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH