An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c plane or a surface that inclines a c plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation {HEAD ~ arrays} that are formed in {TAIL ~ the SiC epitaxial film} is 10 arrays/cm2 or less 
are formed in
An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c plane or a surface that inclines a c plane with an angle of inclination that is more than 0 degree but less than 10 degrees , and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer , wherein the dislocation array density of threading edge dislocation { HEAD ~ arrays } that are formed in { TAIL ~ the SiC epitaxial film } is 10 arrays / cm2 or less
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