When the degree of accumulation in the ideal orientation of is too high, etching develops along the crystal lattice during etching of a rolled plate into a shadow mask and {HEAD ~ the etched hole} is irregular in profile and poor in {TAIL ~ degree} of circularity as shown in FIG 1C 
is poor in
When the degree of accumulation in the ideal orientation of is too high , etching develops along the crystal lattice during etching of a rolled plate into a shadow mask and { HEAD ~ the etched hole } is irregular in profile and poor in { TAIL ~ degree } of circularity as shown in FIG 1C
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH REL REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH