In the flash memory device, a common source line is formed to cross only with {HEAD ~ an isolation layer} adjacent {TAIL ~ an active region} of a normal pattern forming memory cells 
adjacent
In the flash memory device , a common source line is formed to cross only with { HEAD ~ an isolation layer } adjacent { TAIL ~ an active region } of a normal pattern forming memory cells
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH