The DMOS device is formed in a substrate, and includes a high voltage well, a first field oxide region, a first gate, a first source, a drain, a body region, a body electrode, {HEAD ~ a second field oxide region}, {TAIL ~ a second gate}, and a second source 
The DMOS device is formed in a substrate , and includes a high voltage well , a first field oxide region , a first gate , a first source , a drain , a body region , a body electrode , { HEAD ~ a second field oxide region } , { TAIL ~ a second gate } , and a second source
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH