A cellular insulated gate bipolar transistor device has a reduced length of the channels of the individual cells that is formed by reducing the channel drive in time from the customary 120 minutes at 1175° C. to {TAIL ~ between 60 and 90 minutes} at {HEAD ~ 1175° C} 
A cellular insulated gate bipolar transistor device has a reduced length of the channels of the individual cells that is formed by reducing the channel drive in time from the customary 120 minutes at 1175 ° C. to { TAIL ~ between 60 and 90 minutes } at { HEAD ~ 1175 ° C }
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