The semiconductor structure further includes a second silicon nitride barrier layer that is defined over the oxide material such that a moisture path barrier is established at the transition edges where {HEAD ~ the first silicon nitride barrier layer} meets {TAIL ~ the second silicon nitride barrier layer} 
meets
The semiconductor structure further includes a second silicon nitride barrier layer that is defined over the oxide material such that a moisture path barrier is established at the transition edges where { HEAD ~ the first silicon nitride barrier layer } meets { TAIL ~ the second silicon nitride barrier layer }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL