{HEAD ~ A first blocking layer} is formed of amorphous silicon carbide or amorphous silicon nitride on {TAIL ~ a conductive substrate} 
is formed on
{ HEAD ~ A first blocking layer } is formed of amorphous silicon carbide or amorphous silicon nitride on { TAIL ~ a conductive substrate }
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL OTH OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL