Even more particularly, the present invention relates to non overly destructive dry plasma etching {TAIL ~ processes}, i.e., those which damage {HEAD ~ neither the sidewalls} of the semiconductor structures nor the surface of the semiconductor wafer 
Even more particularly , the present invention relates to non overly destructive dry plasma etching { TAIL ~ processes } , i.e. , those which damage { HEAD ~ neither the sidewalls } of the semiconductor structures nor the surface of the semiconductor wafer
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