A second method is characterized by forming insulating side walls of {HEAD ~ the gate electrode} by {TAIL ~ silicate glass} such as BSG, etc 
by
A second method is characterized by forming insulating side walls of { HEAD ~ the gate electrode } by { TAIL ~ silicate glass } such as BSG , etc
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH