According to the present invention, in a nitride semiconductor single crystal wafer having a flat principal surface, {HEAD ~ crystallographic plane orientation} of that principal surface varies locally within {TAIL ~ a predetermined angular range} 
varies locally within
According to the present invention , in a nitride semiconductor single crystal wafer having a flat principal surface , { HEAD ~ crystallographic plane orientation } of that principal surface varies locally within { TAIL ~ a predetermined angular range }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL