The epitaxial SiC single crystal substrate 1, wherein a buffer region layer is formed between said SiC epitaxial film and said SiC single crystal wafer, and carrier concentration in the buffer region layer gradually increases toward said SiC single crystal wafer side, and a rate of change of said carrier concentration is 80% or less per {HEAD ~ 0.5 μm} in {TAIL ~ the depthwise direction} 
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The epitaxial SiC single crystal substrate 1 , wherein a buffer region layer is formed between said SiC epitaxial film and said SiC single crystal wafer , and carrier concentration in the buffer region layer gradually increases toward said SiC single crystal wafer side , and a rate of change of said carrier concentration is 80 % or less per { HEAD ~ 0.5 μm } in { TAIL ~ the depthwise direction }
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