A field effect device structure comprising {HEAD ~ a semiconductor p n junction} adjacent to an insulated gate electrode is utilized in which a depletion region is created under {TAIL ~ the gate electrode} in the presence of alternating forward and reverse biasing of the p n junction 
A field effect device structure comprising { HEAD ~ a semiconductor p n junction } adjacent to an insulated gate electrode is utilized in which a depletion region is created under { TAIL ~ the gate electrode } in the presence of alternating forward and reverse biasing of the p n junction
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