Silicon is removed in these regions to a depth such that {HEAD ~ the bottom} of trenches 238 is typically {TAIL ~ approximately 60 nm} beneath the surface 212 between STI oxide 210 and the semiconductor body 214 
is typically
Silicon is removed in these regions to a depth such that { HEAD ~ the bottom } of trenches 238 is typically { TAIL ~ approximately 60 nm } beneath the surface 212 between STI oxide 210 and the semiconductor body 214
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH