According to {TAIL ~ the method}, {HEAD ~ a gate stack} is formed on a semiconductor substrate, and impurity ions are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate 
According to
According to { TAIL ~ the method } , { HEAD ~ a gate stack } is formed on a semiconductor substrate , and impurity ions are implanted at a predetermined angle to form a source / drain junction in the semiconductor substrate
REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH