etching the layer to be processed with any one of Xe, Kr, a mixed gas of Ar and at least one of Xe and Kr, and a mixed gas of Xe and Kr is used as {HEAD ~ a dilution gas} using {TAIL ~ the remaining film} of the resist pattern as mask, 
using
etching the layer to be processed with any one of Xe , Kr , a mixed gas of Ar and at least one of Xe and Kr , and a mixed gas of Xe and Kr is used as { HEAD ~ a dilution gas } using { TAIL ~ the remaining film } of the resist pattern as mask ,
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH