A capacitor according to the present invention enables {HEAD ~ the HSG layer} to grow on {TAIL ~ an internal wall} of a storage electrode, thereby preventing a micro bridge between storage electrodes resulting from abnormal growth or over growth of the HSG layer 
to grow on
A capacitor according to the present invention enables { HEAD ~ the HSG layer } to grow on { TAIL ~ an internal wall } of a storage electrode , thereby preventing a micro bridge between storage electrodes resulting from abnormal growth or over growth of the HSG layer
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH