In a process for producing an electro electricity generating device, there has been known that a reflection layer of, e.g., metal is formed on the back side of an semiconductor layer in order to improve {HEAD ~ a light collection efficiency} of {TAIL ~ the photo electricity generating device} on a long wavelength 
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In a process for producing an electro electricity generating device , there has been known that a reflection layer of , e.g. , metal is formed on the back side of an semiconductor layer in order to improve { HEAD ~ a light collection efficiency } of { TAIL ~ the photo electricity generating device } on a long wavelength
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