Referring now to FIG 8, a lift off resist layer 30 is formed on the layered structure T1, and {HEAD ~ side portions} of the layered structure T1 not covered with the lift off resist layer 30 are removed by {TAIL ~ etching} or the like 
are removed by
Referring now to FIG 8 , a lift off resist layer 30 is formed on the layered structure T1 , and { HEAD ~ side portions } of the layered structure T1 not covered with the lift off resist layer 30 are removed by { TAIL ~ etching } or the like
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH