A semiconductor device 3, wherein each of the first resistor, the second resistor, and the third resistor has {HEAD ~ a wiring} comprising {TAIL ~ the same material} as the first and second gate electrodes 
comprising
A semiconductor device 3 , wherein each of the first resistor , the second resistor , and the third resistor has { HEAD ~ a wiring } comprising { TAIL ~ the same material } as the first and second gate electrodes
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH