The at least one metallization line having a Lop surface and transition edges leading to the semiconductor substrate, and the metallization line preferably has {HEAD ~ a first thickness} measured between the semiconductor substrate surface and {TAIL ~ the top surface} of the at least one metallization line 
measured between
The at least one metallization line having a Lop surface and transition edges leading to the semiconductor substrate , and the metallization line preferably has { HEAD ~ a first thickness } measured between the semiconductor substrate surface and { TAIL ~ the top surface } of the at least one metallization line
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH