As illustrated in FIG 12, a layer of masking material 586, 588, which can be, for example, {HEAD ~ a layer} of {TAIL ~ photoresist}, is then applied over the gate electrodes 566, 574 
of
As illustrated in FIG 12 , a layer of masking material 586 , 588 , which can be , for example , { HEAD ~ a layer } of { TAIL ~ photoresist } , is then applied over the gate electrodes 566 , 574
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH