{HEAD ~ The pattern} of the partially etched cavities is determined in accordance with the pattern of {TAIL ~ dies} on the device wafer  
{ HEAD ~ The pattern } of the partially etched cavities is determined in accordance with the pattern of { TAIL ~ dies } on the device wafer
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH