Photopolymerization of the low conductivity polymer films of {TAIL ~ the present invention} is useful in the formation of polymer resist/masks for microcircuit photolithography where high resolution patterned lines can be achieved by argon ion laser or electron beam exposure of {HEAD ~ the microcircuit patterns} 
Photopolymerization of the low conductivity polymer films of { TAIL ~ the present invention } is useful in the formation of polymer resist / masks for microcircuit photolithography where high resolution patterned lines can be achieved by argon ion laser or electron beam exposure of { HEAD ~ the microcircuit patterns }
OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD