A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off axis angle of {HEAD ~ the principal surface} of {TAIL ~ the nitride semiconductor substrate} 
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A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available , by specifying or controlling the local variation in the off axis angle of { HEAD ~ the principal surface } of { TAIL ~ the nitride semiconductor substrate }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL