The method further includes maintaining {HEAD ~ a first un etched portion} of {TAIL ~ the substrate} between the first dry etching mask after the first dry etching process and removing the first dry etching mask in a mask removing process after the first dry etching process 
of
The method further includes maintaining { HEAD ~ a first un etched portion } of { TAIL ~ the substrate } between the first dry etching mask after the first dry etching process and removing the first dry etching mask in a mask removing process after the first dry etching process
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH