Subsequently, a mask 70, for example a photoresist mask, which comprises an opening 72 in the area of {HEAD ~ the coil trace} 10, is formed on {TAIL ~ the surface} 62 of the dielectric layer 60 
Subsequently , a mask 70 , for example a photoresist mask , which comprises an opening 72 in the area of { HEAD ~ the coil trace } 10 , is formed on { TAIL ~ the surface } 62 of the dielectric layer 60
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH