Source and drain regions of field effect transistors are fabricated with {HEAD ~ an electrically insulating layer} formed thereunder so as to reduce junction capacitance between each and {TAIL ~ a semiconductor body} in which the regions are formed 
Source and drain regions of field effect transistors are fabricated with { HEAD ~ an electrically insulating layer } formed thereunder so as to reduce junction capacitance between each and { TAIL ~ a semiconductor body } in which the regions are formed
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH