During the forward bias condition {TAIL ~ minority carriers} are injected into {HEAD ~ the semiconductor substrate} adjacent to the gate electrode structure 
During the forward bias condition { TAIL ~ minority carriers } are injected into { HEAD ~ the semiconductor substrate } adjacent to the gate electrode structure
OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH