Based on {HEAD ~ this set} of {TAIL ~ references}, the voltage of the erase/program gate and the control gate are varied to perform the appropriate erase and program functions such that the input signal is written into a memory cell 
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Based on { HEAD ~ this set } of { TAIL ~ references } , the voltage of the erase / program gate and the control gate are varied to perform the appropriate erase and program functions such that the input signal is written into a memory cell
OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH