{TAIL ~ A silicon substrate} covered with a polycrystalline silicon film is thermally oxidized at 900 to 1100° C. in an oxygen ambient to provide an uneven interface between a thermally oxidized silicon film and {HEAD ~ the silicon substrate} 
{ TAIL ~ A silicon substrate } covered with a polycrystalline silicon film is thermally oxidized at 900 to 1100 ° C. in an oxygen ambient to provide an uneven interface between a thermally oxidized silicon film and { HEAD ~ the silicon substrate }
TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD