{HEAD ~ A semiconductor isolation structure} 1, wherein {TAIL ~ said semiconductor substrate} is silicon and said insulator material is an oxide 
wherein
{ HEAD ~ A semiconductor isolation structure } 1 , wherein { TAIL ~ said semiconductor substrate } is silicon and said insulator material is an oxide
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH