{TAIL ~ The device source} is then formed by an arsenic source implanted at 3 E15 followed by {HEAD ~ an anneal temperature} greater than about 975° C 
{ TAIL ~ The device source } is then formed by an arsenic source implanted at 3 E15 followed by { HEAD ~ an anneal temperature } greater than about 975 ° C
TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH