The oscillator 1, wherein the insulating layer is an oxide, a nitride or an oxynitride containing at least one element selected from the group consisting of {HEAD ~ Al}, Hf, Zr, Ti, Ta, Mo, {TAIL ~ W}, Nb and Si 
The oscillator 1 , wherein the insulating layer is an oxide , a nitride or an oxynitride containing at least one element selected from the group consisting of { HEAD ~ Al } , Hf , Zr , Ti , Ta , Mo , { TAIL ~ W } , Nb and Si
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH