A method of forming an integrated circuit device includes the steps of forming a first insulating layer on an integrated circuit substrate, forming a first capacitor electrode on the insulating layer opposite the substrate, and forming a second insulating layer on the first capacitor electrode and on {HEAD ~ the insulating layer} opposite {TAIL ~ the substrate} 
opposite
A method of forming an integrated circuit device includes the steps of forming a first insulating layer on an integrated circuit substrate , forming a first capacitor electrode on the insulating layer opposite the substrate , and forming a second insulating layer on the first capacitor electrode and on { HEAD ~ the insulating layer } opposite { TAIL ~ the substrate }
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