Accordingly, it is an object of the present invention to provide an improved semiconductor memory device and a fabrication method thereof which is capable of lessening {HEAD ~ the parasitic capacitance} formed due to {TAIL ~ polysilicon and impurity areas} 
formed due to
Accordingly , it is an object of the present invention to provide an improved semiconductor memory device and a fabrication method thereof which is capable of lessening { HEAD ~ the parasitic capacitance } formed due to { TAIL ~ polysilicon and impurity areas }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL