The semiconductor process 1, wherein {HEAD ~ the sidewalls} of the second cap layer are entirely exposed as {TAIL ~ the spacer material} is etched 
are entirely exposed as
The semiconductor process 1 , wherein { HEAD ~ the sidewalls } of the second cap layer are entirely exposed as { TAIL ~ the spacer material } is etched
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH REL REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH