A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, wherein {HEAD ~ the buried layer} is produced at {TAIL ~ the junction} between the semiconductor layer and semiconductor substrate 
is produced at
A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer , wherein { HEAD ~ the buried layer } is produced at { TAIL ~ the junction } between the semiconductor layer and semiconductor substrate
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH