Finally, the compound semiconductor substrate 10 is removed by means of methods , so that the epitaxial layers 11 grown on the compound semiconductor substrate 10 can be transferred onto {HEAD ~ the substrate} 2 to form {TAIL ~ a high efficiency photonic device} 5 
to form
Finally , the compound semiconductor substrate 10 is removed by means of methods , so that the epitaxial layers 11 grown on the compound semiconductor substrate 10 can be transferred onto { HEAD ~ the substrate } 2 to form { TAIL ~ a high efficiency photonic device } 5
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH