Embodiments of the invention provide methods of forming {TAIL ~ a titanium nitride layer} that suppress the generation of hafnium chloride on a surface of a hafnium oxide layer, and methods of fabricating a storage capacitor having {HEAD ~ the titanium nitride layer} 
Embodiments of the invention provide methods of forming { TAIL ~ a titanium nitride layer } that suppress the generation of hafnium chloride on a surface of a hafnium oxide layer , and methods of fabricating a storage capacitor having { HEAD ~ the titanium nitride layer }
OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD