{TAIL ~ A method} and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing charge on the surface of the oxide and heating {HEAD ~ the wafer} to allow mobile ions in the oxide to drift 
{ TAIL ~ A method } and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing charge on the surface of the oxide and heating { HEAD ~ the wafer } to allow mobile ions in the oxide to drift
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