A method of forming {HEAD ~ a semiconductor memory device} formed on {TAIL ~ a semiconductor substrate} with an N well and a P well comprises the following steps 
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A method of forming { HEAD ~ a semiconductor memory device } formed on { TAIL ~ a semiconductor substrate } with an N well and a P well comprises the following steps
OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH