A pattern of the damage layer is defined by photolithography, and {HEAD ~ the damage layer} having a depth of about 20 to 5,000 Å is formed using CF4, CHF3, or Ar gas at a pressure of 900 mTorr or less, or using {TAIL ~ Cl2} or HBr 
is formed using
A pattern of the damage layer is defined by photolithography , and { HEAD ~ the damage layer } having a depth of about 20 to 5,000 Å is formed using CF4 , CHF3 , or Ar gas at a pressure of 900 mTorr or less , or using { TAIL ~ Cl2 } or HBr
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH REL REL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL OTH OTH