thereafter annealing said structure at {HEAD ~ a lower temperature} in the range of 700° C. to 900° C. to induce {TAIL ~ an extension} of the diffusion profile deeper into said structure, 
to induce
thereafter annealing said structure at { HEAD ~ a lower temperature } in the range of 700 ° C. to 900 ° C. to induce { TAIL ~ an extension } of the diffusion profile deeper into said structure ,
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH