etching the layer to be processed with any one of Xe, Kr, a mixed gas of Ar and at least one of Xe and Kr, and a mixed gas of Xe and Kr is used as a dilution gas using {HEAD ~ the remaining film} of {TAIL ~ the resist pattern} as mask, 
of
etching the layer to be processed with any one of Xe , Kr , a mixed gas of Ar and at least one of Xe and Kr , and a mixed gas of Xe and Kr is used as a dilution gas using { HEAD ~ the remaining film } of { TAIL ~ the resist pattern } as mask ,
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH