A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of {TAIL ~ the peripheral surface} of which is made of a material comprising copper as a main ingredient, and {HEAD ~ a first insulative diffusion barrier layer} 203 covering at least a portion of the first conductor 301 
A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed , a first conductor 301 at least a portion of { TAIL ~ the peripheral surface } of which is made of a material comprising copper as a main ingredient , and { HEAD ~ a first insulative diffusion barrier layer } 203 covering at least a portion of the first conductor 301
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