{TAIL ~ The first insulative diffusion barrier layer} 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula nSiH4−n , and an oxidative gas by {HEAD ~ a plasma} CVD 
{ TAIL ~ The first insulative diffusion barrier layer } 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula nSiH4−n , and an oxidative gas by { HEAD ~ a plasma } CVD
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