The power semiconductor device 8, wherein said high impurity concentration well region is not formed under {HEAD ~ said gate} insulating {TAIL ~ film} provided on said well region 
insulating
The power semiconductor device 8 , wherein said high impurity concentration well region is not formed under { HEAD ~ said gate } insulating { TAIL ~ film } provided on said well region
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH