The polishing pad of the present invention is useful for chemical mechanical polishing an insulating film such as an oxide film formed on a semiconductor substrate or a metallic film, and is excellent in {HEAD ~ flatness} of {TAIL ~ a surface} to be polished and evenness of a film thickness after polishing, and also excellent in a polishing rate, and thus excellent in polishing uniformity of a material to be polished such as an insulating film, a metallic film and the like 
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The polishing pad of the present invention is useful for chemical mechanical polishing an insulating film such as an oxide film formed on a semiconductor substrate or a metallic film , and is excellent in { HEAD ~ flatness } of { TAIL ~ a surface } to be polished and evenness of a film thickness after polishing , and also excellent in a polishing rate , and thus excellent in polishing uniformity of a material to be polished such as an insulating film , a metallic film and the like
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