{HEAD ~ The method} 1, wherein the resistor material comprises tantalum nitride and {TAIL ~ the dielectric layer} comprises a polymer 
wherein
{ HEAD ~ The method } 1 , wherein the resistor material comprises tantalum nitride and { TAIL ~ the dielectric layer } comprises a polymer
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH REL OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH