In a further aspect of the present invention, the first insulator layer is an oxide layer and {HEAD ~ the second insulator layer} is {TAIL ~ a nitride layer} and the semiconductor substrate is silicon 
is
In a further aspect of the present invention , the first insulator layer is an oxide layer and { HEAD ~ the second insulator layer } is { TAIL ~ a nitride layer } and the semiconductor substrate is silicon
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH