The substrate processing method 1, wherein {HEAD ~ the first high frequency power} is equal to or greater than {TAIL ~ 100 W} and equal to or smaller than 500 W and the second high frequency power is equal to or greater than 1000 W and equal to or smaller than 2400 W 
is greater than
The substrate processing method 1 , wherein { HEAD ~ the first high frequency power } is equal to or greater than { TAIL ~ 100 W } and equal to or smaller than 500 W and the second high frequency power is equal to or greater than 1000 W and equal to or smaller than 2400 W
OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH