Next, {HEAD ~ a semiconductor metal compound layer} is epitaxially grown in {TAIL ~ the surface portion} of the semiconductor layer by causing a reaction between an element included in the semiconductor layer and a metal included in the metal film through annealing carried out on the metal film 
is epitaxially grown in
Next , { HEAD ~ a semiconductor metal compound layer } is epitaxially grown in { TAIL ~ the surface portion } of the semiconductor layer by causing a reaction between an element included in the semiconductor layer and a metal included in the metal film through annealing carried out on the metal film
OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH