Based on this set of references, the voltage of the erase/program gate and {TAIL ~ the control gate} are varied to perform the appropriate erase and program functions such that the input signal is written into {HEAD ~ a memory cell} 
Based on this set of references , the voltage of the erase / program gate and { TAIL ~ the control gate } are varied to perform the appropriate erase and program functions such that the input signal is written into { HEAD ~ a memory cell }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD