{HEAD ~ Use} of BTBAS allows depositing either a silicon oxide or {TAIL ~ silicon nitride} film at an accelerated rate while demonstrating superior uniformity and step coverage and reducing the presence of gaps 
allows depositing
{ HEAD ~ Use } of BTBAS allows depositing either a silicon oxide or { TAIL ~ silicon nitride } film at an accelerated rate while demonstrating superior uniformity and step coverage and reducing the presence of gaps
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