Since it is formed on a flat top surface in such a case, it is possible to apply the conditions for diffusion or ion implantation that are used in the fabrication of VSLIs, with {HEAD ~ substantially no change} of {TAIL ~ the process} 
of
Since it is formed on a flat top surface in such a case , it is possible to apply the conditions for diffusion or ion implantation that are used in the fabrication of VSLIs , with { HEAD ~ substantially no change } of { TAIL ~ the process }
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