The second array of bitlines and {TAIL ~ channel regions} is orthogonally disposed relative to the wordline array and {HEAD ~ the second array} of bitlines is formed in a storage plane over an interpolysilicon oxide dielectric isolation layer 
The second array of bitlines and { TAIL ~ channel regions } is orthogonally disposed relative to the wordline array and { HEAD ~ the second array } of bitlines is formed in a storage plane over an interpolysilicon oxide dielectric isolation layer
OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH