FIG 2 illustrates, in a cross sectional view, {HEAD ~ a dry plasma} etched {TAIL ~ multilayer semiconductor structure} 20 of a semiconductor device 2000, according to the present invention 
etched
FIG 2 illustrates , in a cross sectional view , { HEAD ~ a dry plasma } etched { TAIL ~ multilayer semiconductor structure } 20 of a semiconductor device 2000 , according to the present invention
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH