The present invention is based on {HEAD ~ the finding} of {TAIL ~ the inventors} that at the lattice mismatching degree Δa/a between the GaInAs light absorbing layer and the InP buffer layer in the positive range the dark current is lower than the negative range at room temperature 
of
The present invention is based on { HEAD ~ the finding } of { TAIL ~ the inventors } that at the lattice mismatching degree Δa / a between the GaInAs light absorbing layer and the InP buffer layer in the positive range the dark current is lower than the negative range at room temperature
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