The method of forming a dual oxide layer 1, wherein {HEAD ~ said removing} of one portion of the nitride layer comprises depositing a photoresist on the nitride layer, and exposing {TAIL ~ the photoresist} to light and developing the photoresist 
comprises exposing
The method of forming a dual oxide layer 1 , wherein { HEAD ~ said removing } of one portion of the nitride layer comprises depositing a photoresist on the nitride layer , and exposing { TAIL ~ the photoresist } to light and developing the photoresist
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH REL OTH OTH OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH