{HEAD ~ The semiconductor structure} 3, wherein the single crystalline layer comprises, disposed between {TAIL ~ the nucleation layer} and the bulk layer, a transitional layer having a morphology that is less pitted with increasing thickness 
disposed between
{ HEAD ~ The semiconductor structure } 3 , wherein the single crystalline layer comprises , disposed between { TAIL ~ the nucleation layer } and the bulk layer , a transitional layer having a morphology that is less pitted with increasing thickness
HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH