A silicon substrate covered with a polycrystalline silicon film is thermally oxidized at 900 to 1100° C. in {HEAD ~ an oxygen ambient} to provide {TAIL ~ an uneven interface} between a thermally oxidized silicon film and the silicon substrate 
to provide
A silicon substrate covered with a polycrystalline silicon film is thermally oxidized at 900 to 1100 ° C. in { HEAD ~ an oxygen ambient } to provide { TAIL ~ an uneven interface } between a thermally oxidized silicon film and the silicon substrate
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH