The semiconductor structure 3 wherein {HEAD ~ the electrical isolation} of the source and {TAIL ~ drain regions} comprises a dielectric region partly surrounding the regions and a dielectric layer under each of the regions 
of
The semiconductor structure 3 wherein { HEAD ~ the electrical isolation } of the source and { TAIL ~ drain regions } comprises a dielectric region partly surrounding the regions and a dielectric layer under each of the regions
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH