Using {HEAD ~ this precursor solution formulation} enables {TAIL ~ formation} of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities 
enables
Using { HEAD ~ this precursor solution formulation } enables { TAIL ~ formation } of a film having a dielectric constant less than 2.5 , appropriate mechanical properties , and minimal levels of alkali metal impurities
OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH