These and {TAIL ~ other objects} are provided, according to the present invention, by a NAND type flash memory device having a dummy region forming a dummy pattern in which {HEAD ~ a common source line} is formed to cross only with an isolation layer adjacent an active region of a normal pattern forming memory cells 
These and { TAIL ~ other objects } are provided , according to the present invention , by a NAND type flash memory device having a dummy region forming a dummy pattern in which { HEAD ~ a common source line } is formed to cross only with an isolation layer adjacent an active region of a normal pattern forming memory cells
OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH