Accordingly, {TAIL ~ stress voltage measurements} at {HEAD ~ 10 V} suggest that semiconductor devices fabricated according to the example embodiment of Sample 1 can provide a memory window of greater than 3.2 V 
Accordingly , { TAIL ~ stress voltage measurements } at { HEAD ~ 10 V } suggest that semiconductor devices fabricated according to the example embodiment of Sample 1 can provide a memory window of greater than 3.2 V
OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH