Advantages of {HEAD ~ preferred embodiments} of the present invention include providing methods of patterning MTJs of MRAM devices wherein a wet etch process may be used to pattern {TAIL ~ the top magnetic material layer} 
Advantages of { HEAD ~ preferred embodiments } of the present invention include providing methods of patterning MTJs of MRAM devices wherein a wet etch process may be used to pattern { TAIL ~ the top magnetic material layer }
OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL