{HEAD ~ A semiconductor substrate} is provided which includes a first well region having a first conductivity type, a second well region having the first conductivity type, {TAIL ~ a first gate structure} overlying the first well region and the second gate structure overlying the second well region 
includes
{ HEAD ~ A semiconductor substrate } is provided which includes a first well region having a first conductivity type , a second well region having the first conductivity type , { TAIL ~ a first gate structure } overlying the first well region and the second gate structure overlying the second well region
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