A pattern of the damage layer is defined by photolithography, and the damage layer having a depth of about 20 to 5,000 Å is formed using CF4, CHF3, or Ar gas at {HEAD ~ a pressure} of {TAIL ~ 900 mTorr} or less, or using Cl2 or HBr 
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A pattern of the damage layer is defined by photolithography , and the damage layer having a depth of about 20 to 5,000 Å is formed using CF4 , CHF3 , or Ar gas at { HEAD ~ a pressure } of { TAIL ~ 900 mTorr } or less , or using Cl2 or HBr
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH