Single event upset hardening is provided in a static random access memory cell, including cross coupled inverters, by the restoration of voltages at selected nodes within the cell by a pair of {TAIL ~ transistors} connected to the cross coupling between {HEAD ~ inverters} 
Single event upset hardening is provided in a static random access memory cell , including cross coupled inverters , by the restoration of voltages at selected nodes within the cell by a pair of { TAIL ~ transistors } connected to the cross coupling between { HEAD ~ inverters }
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