The plasma processing apparatus 1, wherein the processing chamber is provided therein with {HEAD ~ an electrode} for supporting {TAIL ~ the semiconductor device}, and wherein the gas shower plate is provided between the electrode for supporting the semiconductor device and the antenna electrode 
for supporting
The plasma processing apparatus 1 , wherein the processing chamber is provided therein with { HEAD ~ an electrode } for supporting { TAIL ~ the semiconductor device } , and wherein the gas shower plate is provided between the electrode for supporting the semiconductor device and the antenna electrode
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH