A method of forming an integrated circuit device includes {HEAD ~ the steps} of forming a first insulating layer on an integrated circuit substrate, forming {TAIL ~ a first capacitor electrode} on the insulating layer opposite the substrate, and forming a second insulating layer on the first capacitor electrode and on the insulating layer opposite the substrate 
of forming
A method of forming an integrated circuit device includes { HEAD ~ the steps } of forming a first insulating layer on an integrated circuit substrate , forming { TAIL ~ a first capacitor electrode } on the insulating layer opposite the substrate , and forming a second insulating layer on the first capacitor electrode and on the insulating layer opposite the substrate
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