forming on the organic anti reflection coating {HEAD ~ a pattern} of a resist containing {TAIL ~ C═O bonds} and not more than 20% by weight ratio of benzene nucleus that represents a resist material used in ArE lithography 
containing
forming on the organic anti reflection coating { HEAD ~ a pattern } of a resist containing { TAIL ~ C ═ O bonds } and not more than 20 % by weight ratio of benzene nucleus that represents a resist material used in ArE lithography
OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH