In the above metal compound powder, preferably, compound is not dissociated under {HEAD ~ the irradiation} with {TAIL ~ a carbon dioxide gas laser}, and therefore, no adverse influence is caused on a semiconductor chip and the intimate contact capability of a hole wall 
with
In the above metal compound powder , preferably , compound is not dissociated under { HEAD ~ the irradiation } with { TAIL ~ a carbon dioxide gas laser } , and therefore , no adverse influence is caused on a semiconductor chip and the intimate contact capability of a hole wall
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH