In the present invention, {TAIL ~ the oxide layer} is used not due to the dielectric properties, but the easy formation and low cost for {HEAD ~ the oxide layer} to form a template pattern using a semiconductor manufacturing process 
In the present invention , { TAIL ~ the oxide layer } is used not due to the dielectric properties , but the easy formation and low cost for { HEAD ~ the oxide layer } to form a template pattern using a semiconductor manufacturing process
OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH