Viewed from a second process aspect, the present invention is directed to a method of fabricating field effect transistors each having a drain region and {TAIL ~ a source region} in a semiconductor body having a major surface and having {HEAD ~ a bulk} of a first conductivity type 
Viewed from a second process aspect , the present invention is directed to a method of fabricating field effect transistors each having a drain region and { TAIL ~ a source region } in a semiconductor body having a major surface and having { HEAD ~ a bulk } of a first conductivity type
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH