{HEAD ~ A nonvolatile semiconductor memory device} includes a memory cell array for storing user data provided by arranging memory cells each having a variable resistive element having a first electrode, a second electrode, and a variable resistor made of a metal oxide sandwiched between {TAIL ~ the first and second electrodes} 
{ HEAD ~ A nonvolatile semiconductor memory device } includes a memory cell array for storing user data provided by arranging memory cells each having a variable resistive element having a first electrode , a second electrode , and a variable resistor made of a metal oxide sandwiched between { TAIL ~ the first and second electrodes }
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