In the present disclosure, {HEAD ~ a crystalline oxide semiconductor} having {TAIL ~ a bixbyte structure} may have a C type rare earth structure, i.e., a scandium oxide structure, and be doped with an impurity 
having
In the present disclosure , { HEAD ~ a crystalline oxide semiconductor } having { TAIL ~ a bixbyte structure } may have a C type rare earth structure , i.e. , a scandium oxide structure , and be doped with an impurity
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH