As a result, the lateral length of the spacer structure can be well controlled and {HEAD ~ the electrical performance} of {TAIL ~ the later formed semiconductor device} can be well controlled as well 
of
As a result , the lateral length of the spacer structure can be well controlled and { HEAD ~ the electrical performance } of { TAIL ~ the later formed semiconductor device } can be well controlled as well
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH