According to the present invention, in {TAIL ~ a nitride semiconductor single crystal wafer} having a flat principal surface, {HEAD ~ crystallographic plane orientation} of that principal surface varies locally within a predetermined angular range 
in
According to the present invention , in { TAIL ~ a nitride semiconductor single crystal wafer } having a flat principal surface , { HEAD ~ crystallographic plane orientation } of that principal surface varies locally within a predetermined angular range
OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH