Therefore, the method provides structures for {HEAD ~ i) an insulating film} of an NDRO type ferroelectric memory device that has a structure of Metal film/Ferroelectric film/Insulating film/Silicon, ii) a gate oxide film substituting for silicon oxide film, and iii) an insulating film of {TAIL ~ Electro Luminescent Display device} 
Therefore , the method provides structures for { HEAD ~ i ) an insulating film } of an NDRO type ferroelectric memory device that has a structure of Metal film / Ferroelectric film / Insulating film / Silicon , ii ) a gate oxide film substituting for silicon oxide film , and iii ) an insulating film of { TAIL ~ Electro Luminescent Display device }
OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL