During the forward bias condition {HEAD ~ minority carriers} are injected into {TAIL ~ the semiconductor substrate} adjacent to the gate electrode structure 
are injected into
During the forward bias condition { HEAD ~ minority carriers } are injected into { TAIL ~ the semiconductor substrate } adjacent to the gate electrode structure
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH