The semiconductor structure 3, wherein the single crystalline layer comprises, disposed between the nucleation layer and the bulk layer, {HEAD ~ a transitional layer} having {TAIL ~ a morphology} that is less pitted with increasing thickness 
having
The semiconductor structure 3 , wherein the single crystalline layer comprises , disposed between the nucleation layer and the bulk layer , { HEAD ~ a transitional layer } having { TAIL ~ a morphology } that is less pitted with increasing thickness
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH