The substrate processing method 1, wherein the first high frequency power is equal to or greater than {TAIL ~ 100 W} and equal to or smaller than 500 W and the second high frequency power is equal to or greater than 1000 W and equal to or smaller than {HEAD ~ 2400 W} 
The substrate processing method 1 , wherein the first high frequency power is equal to or greater than { TAIL ~ 100 W } and equal to or smaller than 500 W and the second high frequency power is equal to or greater than 1000 W and equal to or smaller than { HEAD ~ 2400 W }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD