The NAND type flash memory device 1, wherein said isolation layer is formed by using {HEAD ~ CVD process} through {TAIL ~ STI process} 
through
The NAND type flash memory device 1 , wherein said isolation layer is formed by using { HEAD ~ CVD process } through { TAIL ~ STI process }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL