A second method is characterized by forming insulating side walls of {TAIL ~ the gate electrode} by {HEAD ~ silicate glass} such as BSG, etc 
A second method is characterized by forming insulating side walls of { TAIL ~ the gate electrode } by { HEAD ~ silicate glass } such as BSG , etc
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH