The semiconductor structure 3, wherein the single crystalline layer comprises, disposed between the nucleation layer and the bulk layer, a transitional layer having {HEAD ~ a morphology} that is less pitted with {TAIL ~ increasing thickness} 
is less pitted with
The semiconductor structure 3 , wherein the single crystalline layer comprises , disposed between the nucleation layer and the bulk layer , a transitional layer having { HEAD ~ a morphology } that is less pitted with { TAIL ~ increasing thickness }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH REL REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL