Then the antireflection film 7 of silicon nitride having {HEAD ~ a thickness} of {TAIL ~ 1.8 μm} is formed on the exposed surface of the P+ type region 6 by plasma CVD 
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Then the antireflection film 7 of silicon nitride having { HEAD ~ a thickness } of { TAIL ~ 1.8 μm } is formed on the exposed surface of the P+ type region 6 by plasma CVD
OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH