It is an object of {HEAD ~ the present invention} to provide {TAIL ~ a process} for forming a MOS semiconductor device having an LDD structure which is suitable for a VLSI , and in which the above described disadvantages of the conventional techniques are overcome 
to provide
It is an object of { HEAD ~ the present invention } to provide { TAIL ~ a process } for forming a MOS semiconductor device having an LDD structure which is suitable for a VLSI , and in which the above described disadvantages of the conventional techniques are overcome
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH