{HEAD ~ The precursor solution formulation} enables the formation of a film having a dielectric constant less than 2.5, mechanical properties sufficient for IMD or PMD layers, and minimal levels of {TAIL ~ metal impurities}  
{ HEAD ~ The precursor solution formulation } enables the formation of a film having a dielectric constant less than 2.5 , mechanical properties sufficient for IMD or PMD layers , and minimal levels of { TAIL ~ metal impurities }
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH