Referring to FIG 2G, a storage electrode 124 is formed on the overall surface of the semiconductor substrate 100 including the trench 122, the storage electrode composed of {HEAD ~ polysilicon} doped with {TAIL ~ conductive impurities} 
doped with
Referring to FIG 2 G , a storage electrode 124 is formed on the overall surface of the semiconductor substrate 100 including the trench 122 , the storage electrode composed of { HEAD ~ polysilicon } doped with { TAIL ~ conductive impurities }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL