{TAIL ~ A semiconductor layer} 40 is then formed in {HEAD ~ contact} with the source/drain electrodes 20 s, 20 d and on the gate electrode 20 g with the inorganic insulating layer 35 interposed therebetween 
{ TAIL ~ A semiconductor layer } 40 is then formed in { HEAD ~ contact } with the source / drain electrodes 20 s , 20 d and on the gate electrode 20 g with the inorganic insulating layer 35 interposed therebetween
TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH