At this time, a decreasing step is performed with a step for removing an impurity concentrating film on the surface of a silicon wafer, such as an oxide film, depending on {HEAD ~ the surface state} of {TAIL ~ the silicon water} 
of
At this time , a decreasing step is performed with a step for removing an impurity concentrating film on the surface of a silicon wafer , such as an oxide film , depending on { HEAD ~ the surface state } of { TAIL ~ the silicon water }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL