Accordingly, an object of the present invention is to provide a process for forming {HEAD ~ a thin film} of amorphous silicon of a uniform thickness over {TAIL ~ the entire surface} of a relatively large insulating substrate 
over
Accordingly , an object of the present invention is to provide a process for forming { HEAD ~ a thin film } of amorphous silicon of a uniform thickness over { TAIL ~ the entire surface } of a relatively large insulating substrate
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH