According to a fourth aspect of the present invention, in a semiconductor substrate and a production method thereof, after the sub grain boundaries in the first semiconductor film are inactivated, {HEAD ~ a further semiconductor film} is epitaxially grown on {TAIL ~ the first semiconductor film} 
is epitaxially grown on
According to a fourth aspect of the present invention , in a semiconductor substrate and a production method thereof , after the sub grain boundaries in the first semiconductor film are inactivated , { HEAD ~ a further semiconductor film } is epitaxially grown on { TAIL ~ the first semiconductor film }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL