Next, {HEAD ~ a semiconductor metal compound layer} is epitaxially grown in the surface portion of the semiconductor layer by causing a reaction between an element included in the semiconductor layer and a metal included in the metal film through annealing carried out on {TAIL ~ the metal film} 
Next , { HEAD ~ a semiconductor metal compound layer } is epitaxially grown in the surface portion of the semiconductor layer by causing a reaction between an element included in the semiconductor layer and a metal included in the metal film through annealing carried out on { TAIL ~ the metal film }
OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL