A method is presented for accelerating the injection of {HEAD ~ minority carriers} into {TAIL ~ an insulating layer} overlying a semiconductor substrate under conditions less severe than required to produce impact ionization 
A method is presented for accelerating the injection of { HEAD ~ minority carriers } into { TAIL ~ an insulating layer } overlying a semiconductor substrate under conditions less severe than required to produce impact ionization
OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH