More particularly, the present invention applies industrially to dry {HEAD ~ plasma} etching {TAIL ~ processes} for etching multiple layers of semiconductor material formed on a semiconductor wafer in order to produce vertical sidewall structures 
etching
More particularly , the present invention applies industrially to dry { HEAD ~ plasma } etching { TAIL ~ processes } for etching multiple layers of semiconductor material formed on a semiconductor wafer in order to produce vertical sidewall structures
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH