During the reverse bias condition previously injected free minority carriers are accelerated by the depletion field produced by the gate electrode such that {HEAD ~ significant quantities} of carriers exceed the semiconductor/insulator barrier potential and are injected into {TAIL ~ the insulator} 
are injected into
During the reverse bias condition previously injected free minority carriers are accelerated by the depletion field produced by the gate electrode such that { HEAD ~ significant quantities } of carriers exceed the semiconductor / insulator barrier potential and are injected into { TAIL ~ the insulator }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL