a gate electrode formed over said silicon substrate in {HEAD ~ correspondence} to said channel region via a gate insulation film, said gate electrode carrying sidewall insulation films on {TAIL ~ respective, mutually opposite sidewall surfaces} thereof 
a gate electrode formed over said silicon substrate in { HEAD ~ correspondence } to said channel region via a gate insulation film , said gate electrode carrying sidewall insulation films on { TAIL ~ respective , mutually opposite sidewall surfaces } thereof
OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH