FIG 11 shows a sectional structure of a reflection mask, which is {HEAD ~ another example} of an optical element of the present invention, and the relationship between the position of a pattern 221 formed from a multilayer, which is a region having a high reflectivity, and {TAIL ~ the reflected radiation intensity} of incident radiation when vacuum ultraviolet radiation or X radiation 411 is introduced at an incidence angle θ to the reflection mask 
FIG 11 shows a sectional structure of a reflection mask , which is { HEAD ~ another example } of an optical element of the present invention , and the relationship between the position of a pattern 221 formed from a multilayer , which is a region having a high reflectivity , and { TAIL ~ the reflected radiation intensity } of incident radiation when vacuum ultraviolet radiation or X radiation 411 is introduced at an incidence angle θ to the reflection mask
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