Use of BTBAS allows depositing either a silicon oxide or silicon nitride {HEAD ~ film} at {TAIL ~ an accelerated rate} while demonstrating superior uniformity and step coverage and reducing the presence of gaps 
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Use of BTBAS allows depositing either a silicon oxide or silicon nitride { HEAD ~ film } at { TAIL ~ an accelerated rate } while demonstrating superior uniformity and step coverage and reducing the presence of gaps
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