{HEAD ~ A trench} is formed in {TAIL ~ the source/drain region} of the semiconductor substrate thereby removing at least a portion of the halo structure in the source/drain region 
is formed in
{ HEAD ~ A trench } is formed in { TAIL ~ the source / drain region } of the semiconductor substrate thereby removing at least a portion of the halo structure in the source / drain region
HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH