{TAIL ~ The illustrative embodiments} provide a design structure for actively biasing field effect transistors in {HEAD ~ a loop filter} in an integrated phase lock loop circuit to form precision integrated resistors having a reduced area and improved high frequency capability 
{ TAIL ~ The illustrative embodiments } provide a design structure for actively biasing field effect transistors in { HEAD ~ a loop filter } in an integrated phase lock loop circuit to form precision integrated resistors having a reduced area and improved high frequency capability
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