More particularly, the present invention applies industrially to dry plasma etching processes for etching multiple layers of semiconductor material formed on a semiconductor wafer in {HEAD ~ order} to produce {TAIL ~ vertical sidewall structures} 
to produce
More particularly , the present invention applies industrially to dry plasma etching processes for etching multiple layers of semiconductor material formed on a semiconductor wafer in { HEAD ~ order } to produce { TAIL ~ vertical sidewall structures }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL