{HEAD ~ The layer} of masking material is patterned to form an ion implant mask 586, 588 which exposes regions of the semiconductor layer 540 which correspond to the eventual locations of the drain region 542, the source/base region 550, and {TAIL ~ the cathode region} 558 
{ HEAD ~ The layer } of masking material is patterned to form an ion implant mask 586 , 588 which exposes regions of the semiconductor layer 540 which correspond to the eventual locations of the drain region 542 , the source / base region 550 , and { TAIL ~ the cathode region } 558
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH