The thin film transistor 1, wherein the channel layer, a gate insulating film and {HEAD ~ gate electrode} are stacked on and above {TAIL ~ a substrate} in this order 
are stacked on
The thin film transistor 1 , wherein the channel layer , a gate insulating film and { HEAD ~ gate electrode } are stacked on and above { TAIL ~ a substrate } in this order
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH