The sensor arrangement 1, wherein the first pinning structure further comprises {HEAD ~ an even number} of {TAIL ~ first anti ferromagnetic coupling layers}, wherein each of the odd number of first ferromagnetic layers is separated from another of the odd number of first ferromagnetic layers by at least one of the even number of first anti ferromagnetic coupling layers 
of
The sensor arrangement 1 , wherein the first pinning structure further comprises { HEAD ~ an even number } of { TAIL ~ first anti ferromagnetic coupling layers } , wherein each of the odd number of first ferromagnetic layers is separated from another of the odd number of first ferromagnetic layers by at least one of the even number of first anti ferromagnetic coupling layers
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH