In {TAIL ~ the present embodiment} {HEAD ~ a wet etch process} is used that preferentially etches remaining dielectric film 108 b over semiconductor 1 and the other structures formed on semiconductor 1 such as a dilute HF or BOE wet etch solution 
In
In { TAIL ~ the present embodiment } { HEAD ~ a wet etch process } is used that preferentially etches remaining dielectric film 108 b over semiconductor 1 and the other structures formed on semiconductor 1 such as a dilute HF or BOE wet etch solution
REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH