{HEAD ~ The exposed portions} of the insulating material layer are anisotropically etched to provide a sidewall spacer adjacent a first sidewall of the second gate structure, and an insulating spacer block formed overlying a portion of the second gate structure and adjacent a second sidewall of {TAIL ~ the second gate structure} 
{ HEAD ~ The exposed portions } of the insulating material layer are anisotropically etched to provide a sidewall spacer adjacent a first sidewall of the second gate structure , and an insulating spacer block formed overlying a portion of the second gate structure and adjacent a second sidewall of { TAIL ~ the second gate structure }
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