{HEAD ~ A pattern} of {TAIL ~ the damage layer} is defined by photolithography, and the damage layer having a depth of about 20 to 5,000 Å is formed using CF4, CHF3, or Ar gas at a pressure of 900 mTorr or less, or using Cl2 or HBr 
of
{ HEAD ~ A pattern } of { TAIL ~ the damage layer } is defined by photolithography , and the damage layer having a depth of about 20 to 5,000 Å is formed using CF4 , CHF3 , or Ar gas at a pressure of 900 mTorr or less , or using Cl2 or HBr
HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH