Using this precursor solution formulation enables formation of {HEAD ~ a film} having a dielectric constant less than 2.5, appropriate mechanical properties, and {TAIL ~ minimal levels} of alkali metal impurities 
having
Using this precursor solution formulation enables formation of { HEAD ~ a film } having a dielectric constant less than 2.5 , appropriate mechanical properties , and { TAIL ~ minimal levels } of alkali metal impurities
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH