Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and {HEAD ~ minimal levels} of {TAIL ~ alkali metal impurities} 
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Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5 , appropriate mechanical properties , and { HEAD ~ minimal levels } of { TAIL ~ alkali metal impurities }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL