wherein a mixed gas of Ar with a flow ratio of not more than 10% relative to a total plasma gas flow and CxHyFz that represents a fluorocarbon gas is used as the plasma gas for etching the organic anti reflection coating and {HEAD ~ a portion} of {TAIL ~ the layer} to be processed, and 
of
wherein a mixed gas of Ar with a flow ratio of not more than 10 % relative to a total plasma gas flow and CxHyFz that represents a fluorocarbon gas is used as the plasma gas for etching the organic anti reflection coating and { HEAD ~ a portion } of { TAIL ~ the layer } to be processed , and
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH