At this time, a decreasing step is performed with {HEAD ~ a step} for removing an impurity concentrating film on the surface of a silicon wafer, such as an oxide film, depending on the surface state of {TAIL ~ the silicon water} 
At this time , a decreasing step is performed with { HEAD ~ a step } for removing an impurity concentrating film on the surface of a silicon wafer , such as an oxide film , depending on the surface state of { TAIL ~ the silicon water }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL