In one embodiment, the first sub portions {HEAD ~ 131 a}, 132 a and 133 a of {TAIL ~ the first and second doped regions} of the first and second transistors are formed 
of
In one embodiment , the first sub portions { HEAD ~ 131 a } , 132 a and 133 a of { TAIL ~ the first and second doped regions } of the first and second transistors are formed
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH