selectively etching a part of {TAIL ~ the second conductive layer} to form {HEAD ~ a portion} of the gate electrode consisting of the first conductive layer 
selectively etching a part of { TAIL ~ the second conductive layer } to form { HEAD ~ a portion } of the gate electrode consisting of the first conductive layer
OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH