forming a plurality of {HEAD ~ first and second spaced apart regions} of {TAIL ~ a second conductivity type} in a semiconductor substrate of a first conductivity type, with a plurality of channel regions each defined in the substrate between one of the first regions and one of the second regions, wherein each channel region includes a first portion and a second portion, and wherein the substrate has a surface 
of
forming a plurality of { HEAD ~ first and second spaced apart regions } of { TAIL ~ a second conductivity type } in a semiconductor substrate of a first conductivity type , with a plurality of channel regions each defined in the substrate between one of the first regions and one of the second regions , wherein each channel region includes a first portion and a second portion , and wherein the substrate has a surface
OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH