Accordingly, it is an object of the present invention to provide an improved semiconductor memory device and {HEAD ~ a fabrication method} thereof which is capable of lessening {TAIL ~ the parasitic capacitance} formed due to polysilicon and impurity areas 
Accordingly , it is an object of the present invention to provide an improved semiconductor memory device and { HEAD ~ a fabrication method } thereof which is capable of lessening { TAIL ~ the parasitic capacitance } formed due to polysilicon and impurity areas
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