Single event upset hardening is provided in a static random access memory cell, including {TAIL ~ cross coupled inverters}, by the restoration of voltages at {HEAD ~ selected nodes} within the cell by a pair of transistors connected to the cross coupling between inverters 
Single event upset hardening is provided in a static random access memory cell , including { TAIL ~ cross coupled inverters } , by the restoration of voltages at { HEAD ~ selected nodes } within the cell by a pair of transistors connected to the cross coupling between inverters
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH