The inventors discovered that in a nitride semiconductor substrate of, for example, {HEAD ~ AlxGayIn1−N} , having {TAIL ~ a physically flat principal surface}, by controlling local variation Δθ in off axis angle θ within that principal surface, predetermined choice properties are obtained for a substrate, as described below 
The inventors discovered that in a nitride semiconductor substrate of , for example , { HEAD ~ AlxGayIn1−N } , having { TAIL ~ a physically flat principal surface } , by controlling local variation Δθ in off axis angle θ within that principal surface , predetermined choice properties are obtained for a substrate , as described below
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH