{TAIL ~ The HDD material layer} 346 is implanted to a depth 346′ in {HEAD ~ the trench} 342 of the MOS transistor device 302, and is self aligned with respect to the offset spacer 312 
{ TAIL ~ The HDD material layer } 346 is implanted to a depth 346′ in { HEAD ~ the trench } 342 of the MOS transistor device 302 , and is self aligned with respect to the offset spacer 312
TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH