{HEAD ~ The exposed portions} of {TAIL ~ the insulating material layer} are anisotropically etched to provide a sidewall spacer adjacent a first sidewall of the second gate structure, and an insulating spacer block formed overlying a portion of the second gate structure and adjacent a second sidewall of the second gate structure 
{ HEAD ~ The exposed portions } of { TAIL ~ the insulating material layer } are anisotropically etched to provide a sidewall spacer adjacent a first sidewall of the second gate structure , and an insulating spacer block formed overlying a portion of the second gate structure and adjacent a second sidewall of the second gate structure
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