These and other objects are provided, according to the present invention, by a NAND type flash memory device having a dummy region forming a dummy pattern in which a common source line is formed to cross only with an isolation layer adjacent {HEAD ~ an active region} of {TAIL ~ a normal pattern} forming memory cells 
These and other objects are provided , according to the present invention , by a NAND type flash memory device having a dummy region forming a dummy pattern in which a common source line is formed to cross only with an isolation layer adjacent { HEAD ~ an active region } of { TAIL ~ a normal pattern } forming memory cells
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH