The layer of masking material is patterned to form an ion implant mask 586, 588 which exposes regions of the semiconductor layer 540 which correspond to {HEAD ~ the eventual locations} of the drain region 542, {TAIL ~ the source/base region} 550, and the cathode region 558 
The layer of masking material is patterned to form an ion implant mask 586 , 588 which exposes regions of the semiconductor layer 540 which correspond to { HEAD ~ the eventual locations } of the drain region 542 , { TAIL ~ the source / base region } 550 , and the cathode region 558
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH