A second ion implantation is carried out under the conditions of a concentration of about 5.0×1015 ions/cm2 and {TAIL ~ an acceleration energy} of about 40 KeV using {HEAD ~ As+ ions} serving as carriers 
A second ion implantation is carried out under the conditions of a concentration of about 5.0×1015 ions / cm2 and { TAIL ~ an acceleration energy } of about 40 KeV using { HEAD ~ As+ ions } serving as carriers
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH