During the reverse bias condition previously injected free minority carriers are accelerated by the depletion field produced by the gate electrode such that {HEAD ~ significant quantities} of {TAIL ~ carriers} exceed the semiconductor/insulator barrier potential and are injected into the insulator 
During the reverse bias condition previously injected free minority carriers are accelerated by the depletion field produced by the gate electrode such that { HEAD ~ significant quantities } of { TAIL ~ carriers } exceed the semiconductor / insulator barrier potential and are injected into the insulator
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH