A nitride semiconductor substrate having properties preferable for {HEAD ~ the manufacture} of {TAIL ~ various nitride semiconductor devices} is made available, by specifying or controlling the local variation in the off axis angle of the principal surface of the nitride semiconductor substrate 
A nitride semiconductor substrate having properties preferable for { HEAD ~ the manufacture } of { TAIL ~ various nitride semiconductor devices } is made available , by specifying or controlling the local variation in the off axis angle of the principal surface of the nitride semiconductor substrate
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