A method is presented for accelerating the injection of {TAIL ~ minority carriers} into an insulating layer overlying a semiconductor substrate under {HEAD ~ conditions} less severe than required to produce impact ionization 
A method is presented for accelerating the injection of { TAIL ~ minority carriers } into an insulating layer overlying a semiconductor substrate under { HEAD ~ conditions } less severe than required to produce impact ionization
OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH