{HEAD ~ The variable resistive elements} of {TAIL ~ all memory cells} in the memory cell array are set to the highest of the two or more different resistance states in an unused state before the memory cell array is used to store the user data 
{ HEAD ~ The variable resistive elements } of { TAIL ~ all memory cells } in the memory cell array are set to the highest of the two or more different resistance states in an unused state before the memory cell array is used to store the user data
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH