{HEAD ~ The process} 9, wherein the gate electrode comprises {TAIL ~ in situ doped polysilicon} 
{ HEAD ~ The process } 9 , wherein the gate electrode comprises { TAIL ~ in situ doped polysilicon }
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL