Even more particularly, the present invention relates to non overly destructive dry plasma etching processes, i.e., those which damage {HEAD ~ neither the sidewalls} of {TAIL ~ the semiconductor structures} nor the surface of the semiconductor wafer 
Even more particularly , the present invention relates to non overly destructive dry plasma etching processes , i.e. , those which damage { HEAD ~ neither the sidewalls } of { TAIL ~ the semiconductor structures } nor the surface of the semiconductor wafer
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH