The semiconductor structure 3 wherein the electrical isolation of {HEAD ~ the source} and drain regions comprises a dielectric region partly surrounding the regions and a dielectric layer under {TAIL ~ each} of the regions 
The semiconductor structure 3 wherein the electrical isolation of { HEAD ~ the source } and drain regions comprises a dielectric region partly surrounding the regions and a dielectric layer under { TAIL ~ each } of the regions
OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL OTH OTH OTH