Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, {HEAD ~ appropriate mechanical properties}, and minimal levels of {TAIL ~ alkali metal impurities} 
Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5 , { HEAD ~ appropriate mechanical properties } , and minimal levels of { TAIL ~ alkali metal impurities }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL