{HEAD ~ The apparatus} 5, wherein {TAIL ~ each photodiode} comprises a P+ layer doped into the bulk semiconductor material 
{ HEAD ~ The apparatus } 5 , wherein { TAIL ~ each photodiode } comprises a P+ layer doped into the bulk semiconductor material
HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH