The substrate processing method 1, wherein the first high frequency power is equal to or greater than 100 W and equal to or smaller than {TAIL ~ 500 W} and {HEAD ~ the second high frequency power} is equal to or greater than 1000 W and equal to or smaller than 2400 W 
The substrate processing method 1 , wherein the first high frequency power is equal to or greater than 100 W and equal to or smaller than { TAIL ~ 500 W } and { HEAD ~ the second high frequency power } is equal to or greater than 1000 W and equal to or smaller than 2400 W
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH