{HEAD ~ The present invention} was made in light of the foregoing circumstances, and its object is to offer an epitaxial SiC single crystal substrate which reduces threading {TAIL ~ edge dislocation} arrays in SiC epitaxial film, and a method of manufacture of the epitaxial SiC single crystal substrate 
{ HEAD ~ The present invention } was made in light of the foregoing circumstances , and its object is to offer an epitaxial SiC single crystal substrate which reduces threading { TAIL ~ edge dislocation } arrays in SiC epitaxial film , and a method of manufacture of the epitaxial SiC single crystal substrate
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