According to a fifth aspect of the present invention, there is provided a magnetoresistive random access memory comprising: a magnetoresistive element of any one of the first to third aspects; a write wiring which gives a current of the spin polarized electrons to the magnetoresistive element; and {HEAD ~ a soft magnetic film} which covers {TAIL ~ at least part} of the write wiring and absorbs a magnetic field leaked from the magnetoresistive element 
According to a fifth aspect of the present invention , there is provided a magnetoresistive random access memory comprising : a magnetoresistive element of any one of the first to third aspects ; a write wiring which gives a current of the spin polarized electrons to the magnetoresistive element ; and { HEAD ~ a soft magnetic film } which covers { TAIL ~ at least part } of the write wiring and absorbs a magnetic field leaked from the magnetoresistive element
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