In order to make the high frequency power amplifier module small in size, a substrate side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from {HEAD ~ a side} of the semiconductor chip than {TAIL ~ a substrate side output electrode} electrically connected to an output wire 
In order to make the high frequency power amplifier module small in size , a substrate side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from { HEAD ~ a side } of the semiconductor chip than { TAIL ~ a substrate side output electrode } electrically connected to an output wire
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