This invention relates to {HEAD ~ methods} of depositing {TAIL ~ aluminum nitride} comprising layers over semiconductor substrates, to methods of forming DRAM circuitry, to DRAM circuitry, to methods of forming field emission devices, and to field emission devices 
This invention relates to { HEAD ~ methods } of depositing { TAIL ~ aluminum nitride } comprising layers over semiconductor substrates , to methods of forming DRAM circuitry , to DRAM circuitry , to methods of forming field emission devices , and to field emission devices
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