The device source is then formed by {HEAD ~ an arsenic source} implanted at {TAIL ~ 3 E15} followed by an anneal temperature greater than about 975° C 
The device source is then formed by { HEAD ~ an arsenic source } implanted at { TAIL ~ 3 E15 } followed by an anneal temperature greater than about 975 ° C
OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH