In further embodiments, {TAIL ~ a method} of writing to {HEAD ~ a resistive sense memory unit} includes applying a first voltage across a bitline BL and a sourceline SL, a resistive sense memory cell 10 and a semiconductor transistor 22 are in serial electrical connection electrically between the bitline BL and the sourceline SL 
In further embodiments , { TAIL ~ a method } of writing to { HEAD ~ a resistive sense memory unit } includes applying a first voltage across a bitline BL and a sourceline SL , a resistive sense memory cell 10 and a semiconductor transistor 22 are in serial electrical connection electrically between the bitline BL and the sourceline SL
OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH