selectively etching {HEAD ~ a part} of the second conductive layer to form {TAIL ~ a portion} of the gate electrode consisting of the first conductive layer 
selectively etching { HEAD ~ a part } of the second conductive layer to form { TAIL ~ a portion } of the gate electrode consisting of the first conductive layer
OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH