In {TAIL ~ the flash memory device}, {HEAD ~ a common source line} is formed to cross only with an isolation layer adjacent an active region of a normal pattern forming memory cells 
In { TAIL ~ the flash memory device } , { HEAD ~ a common source line } is formed to cross only with an isolation layer adjacent an active region of a normal pattern forming memory cells
REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH