{HEAD ~ The method} comprises providing {TAIL ~ a gate structure} over the semiconductor substrate, wherein a dopant material is implanted at an angle around the gate structure to form a halo structure in a source/drain region of the substrate and underlying a portion of the gate structure 
{ HEAD ~ The method } comprises providing { TAIL ~ a gate structure } over the semiconductor substrate , wherein a dopant material is implanted at an angle around the gate structure to form a halo structure in a source / drain region of the substrate and underlying a portion of the gate structure
HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH