Moreover, the capacitor dielectric layer 122 can have a thickness in the range of 500 Angstroms to 1,000 Angstroms, and the dielectric layer can be a layer of silicon oxide formed by {HEAD ~ chemical vapor deposition}, silicon nitride formed by chemical vapor deposition, or tantalum oxide formed by {TAIL ~ physical vapor deposition} 
Moreover , the capacitor dielectric layer 122 can have a thickness in the range of 500 Angstroms to 1,000 Angstroms , and the dielectric layer can be a layer of silicon oxide formed by { HEAD ~ chemical vapor deposition } , silicon nitride formed by chemical vapor deposition , or tantalum oxide formed by { TAIL ~ physical vapor deposition }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL