The present invention provides production repeatable process to form {HEAD ~ polysilicon storage node structures} using {TAIL ~ MVP technology} 
The present invention provides production repeatable process to form { HEAD ~ polysilicon storage node structures } using { TAIL ~ MVP technology }
OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL