The method is useful in characterizing parameters of {HEAD ~ field effect integrated circuit components} subject to {TAIL ~ various charge instability mechanisms} and may also be useful as a means for altering charge conditions in various non volatile memory devices 
The method is useful in characterizing parameters of { HEAD ~ field effect integrated circuit components } subject to { TAIL ~ various charge instability mechanisms } and may also be useful as a means for altering charge conditions in various non volatile memory devices
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH