The method for growing {HEAD ~ a superlattice structure} on a substrate 11 wherein Al, Ga, and As are to be deposited on a substrate to form stacked monolayers of AlAs and GaAs and said step of causing the control means to include and not include respective ones of the elements within {TAIL ~ the beam} in a pre established pattern of time periods includes the steps of: 
The method for growing { HEAD ~ a superlattice structure } on a substrate 11 wherein Al , Ga , and As are to be deposited on a substrate to form stacked monolayers of AlAs and GaAs and said step of causing the control means to include and not include respective ones of the elements within { TAIL ~ the beam } in a pre established pattern of time periods includes the steps of :
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