In one embodiment, the first sub portions {HEAD ~ 131 a}, 132 a and 133 {TAIL ~ a} of the first and second doped regions of the first and second transistors are formed 
In one embodiment , the first sub portions { HEAD ~ 131 a } , 132 a and 133 { TAIL ~ a } of the first and second doped regions of the first and second transistors are formed
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH