Then the antireflection film 7 of {HEAD ~ silicon nitride} having a thickness of 1.8 μm is formed on the exposed surface of the P+ type region 6 by {TAIL ~ plasma CVD} 
Then the antireflection film 7 of { HEAD ~ silicon nitride } having a thickness of 1.8 μm is formed on the exposed surface of the P+ type region 6 by { TAIL ~ plasma CVD }
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL