A cellular insulated gate bipolar transistor device has a reduced length of the channels of the individual cells that is formed by reducing the channel drive in {HEAD ~ time} from the customary 120 minutes at 1175° C. to {TAIL ~ between 60 and 90 minutes} at 1175° C 
A cellular insulated gate bipolar transistor device has a reduced length of the channels of the individual cells that is formed by reducing the channel drive in { HEAD ~ time } from the customary 120 minutes at 1175 ° C. to { TAIL ~ between 60 and 90 minutes } at 1175 ° C
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH