According to the present invention, it is possible to reduce {TAIL ~ the occurrence} of threading edge dislocation arrays in SiC epitaxial film of {HEAD ~ epitaxial SiC} single crystal substrates 
According to the present invention , it is possible to reduce { TAIL ~ the occurrence } of threading edge dislocation arrays in SiC epitaxial film of { HEAD ~ epitaxial SiC } single crystal substrates
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