In a further aspect of the present invention, the first insulator layer is an oxide layer and the second insulator layer is a nitride layer and {HEAD ~ the semiconductor substrate} is {TAIL ~ silicon} 
In a further aspect of the present invention , the first insulator layer is an oxide layer and the second insulator layer is a nitride layer and { HEAD ~ the semiconductor substrate } is { TAIL ~ silicon }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL