The porous insulation layer may be formed by first forming a composite layer of an extractable material and a matrix forming insulation material over the integrated circuit structure on a semiconductor wafer, and then selectively removing the extractable material from the matrix forming material, without damaging the remaining matrix material, thereby leaving behind {HEAD ~ a porous matrix} of {TAIL ~ the insulation material} 
The porous insulation layer may be formed by first forming a composite layer of an extractable material and a matrix forming insulation material over the integrated circuit structure on a semiconductor wafer , and then selectively removing the extractable material from the matrix forming material , without damaging the remaining matrix material , thereby leaving behind { HEAD ~ a porous matrix } of { TAIL ~ the insulation material }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL