The present invention is generally related to {HEAD ~ integrated circuit structures}, and more particularly, to {TAIL ~ a one time programmable Metal Oxide Semiconductor Field Effect Transistor} that is programmed by an electromigration mechanism 
The present invention is generally related to { HEAD ~ integrated circuit structures } , and more particularly , to { TAIL ~ a one time programmable Metal Oxide Semiconductor Field Effect Transistor } that is programmed by an electromigration mechanism
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