Thus {HEAD ~ a semiconductor device} can be obtained capable of reducing {TAIL ~ a compressive stress} caused in the semiconductor substrate near an element isolating trench region to minimize formation of crystal defect 
Thus { HEAD ~ a semiconductor device } can be obtained capable of reducing { TAIL ~ a compressive stress } caused in the semiconductor substrate near an element isolating trench region to minimize formation of crystal defect
OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH