A second method is characterized by forming insulating side walls of the gate electrode by {TAIL ~ silicate glass} such as {HEAD ~ BSG}, etc 
A second method is characterized by forming insulating side walls of the gate electrode by { TAIL ~ silicate glass } such as { HEAD ~ BSG } , etc
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH