The device source is then formed by {HEAD ~ an arsenic source} implanted at 3 E15 followed by {TAIL ~ an anneal temperature} greater than about 975° C 
The device source is then formed by { HEAD ~ an arsenic source } implanted at 3 E15 followed by { TAIL ~ an anneal temperature } greater than about 975 ° C
OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH