{HEAD ~ The substrate processing system} 17 wherein {TAIL ~ the dielectric layer} is a silicon nitride or silicon oxynitride layer 
{ HEAD ~ The substrate processing system } 17 wherein { TAIL ~ the dielectric layer } is a silicon nitride or silicon oxynitride layer
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH