forming on the organic anti reflection coating {TAIL ~ a pattern} of a resist containing C═O bonds and not more than 20% by {HEAD ~ weight ratio} of benzene nucleus that represents a resist material used in ArE lithography 
forming on the organic anti reflection coating { TAIL ~ a pattern } of a resist containing C ═ O bonds and not more than 20 % by { HEAD ~ weight ratio } of benzene nucleus that represents a resist material used in ArE lithography
OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH