The method comprises providing a gate structure over the semiconductor substrate, wherein a dopant material is implanted at an angle around {TAIL ~ the gate structure} to form a halo structure in a source/drain region of {HEAD ~ the substrate} and underlying a portion of the gate structure 
The method comprises providing a gate structure over the semiconductor substrate , wherein a dopant material is implanted at an angle around { TAIL ~ the gate structure } to form a halo structure in a source / drain region of { HEAD ~ the substrate } and underlying a portion of the gate structure
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