The method 1 wherein said depositing {HEAD ~ a layer} of {TAIL ~ strained silicon} includes depositing a layer of strained silicon to a thickness of between about 10 nm to 50 nm 
The method 1 wherein said depositing { HEAD ~ a layer } of { TAIL ~ strained silicon } includes depositing a layer of strained silicon to a thickness of between about 10 nm to 50 nm
OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH