Photopolymerization of the low conductivity polymer films of the present invention is useful in the formation of polymer resist/masks for {HEAD ~ microcircuit photolithography} where high resolution patterned lines can be achieved by argon ion laser or {TAIL ~ electron beam exposure} of the microcircuit patterns 
Photopolymerization of the low conductivity polymer films of the present invention is useful in the formation of polymer resist / masks for { HEAD ~ microcircuit photolithography } where high resolution patterned lines can be achieved by argon ion laser or { TAIL ~ electron beam exposure } of the microcircuit patterns
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