{HEAD ~ The enhanced doping concentration} of {TAIL ~ the JFET gate region} with respect to the semiconductor layer allows the dopant concentration of the drift region to likewise be increased, thereby allowing RESURF conditions to be met at the rated voltage and with a lower rds  
{ HEAD ~ The enhanced doping concentration } of { TAIL ~ the JFET gate region } with respect to the semiconductor layer allows the dopant concentration of the drift region to likewise be increased , thereby allowing RESURF conditions to be met at the rated voltage and with a lower rds
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