initially annealing said structure at {TAIL ~ a high temperature} in the range of 900° C. to 1100° C. to overcome any interfacial barrier to diffusion of said impurity species into said structure and to form in a surface region of said structure {HEAD ~ a surface diffusion profile} containing a high concentration of said impurity species, 
initially annealing said structure at { TAIL ~ a high temperature } in the range of 900 ° C. to 1100 ° C. to overcome any interfacial barrier to diffusion of said impurity species into said structure and to form in a surface region of said structure { HEAD ~ a surface diffusion profile } containing a high concentration of said impurity species ,
OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH