{HEAD ~ The thin film transistor} 1, wherein {TAIL ~ the channel layer}, a gate insulating film and gate electrode are stacked on and above a substrate in this order 
{ HEAD ~ The thin film transistor } 1 , wherein { TAIL ~ the channel layer } , a gate insulating film and gate electrode are stacked on and above a substrate in this order
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH