Thereby, in practice, the composite bonding layers 3 made by above material with melting point between 30° C. to {TAIL ~ 500° C.} are piled in {HEAD ~ sequence} on the epitaxial layers 11 of the semiconductor structure 1 under low temperature environment by means of methods such as sputtering or evaporation 
Thereby , in practice , the composite bonding layers 3 made by above material with melting point between 30 ° C. to { TAIL ~ 500 ° C. } are piled in { HEAD ~ sequence } on the epitaxial layers 11 of the semiconductor structure 1 under low temperature environment by means of methods such as sputtering or evaporation
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH