The invention is a method of depositing {HEAD ~ an aluminum nitride} comprising layer over a semiconductor substrate, {TAIL ~ a method} of forming DRAM circuitry, DRAM circuitry, a method of forming a field emission device, and a field emission device 
The invention is a method of depositing { HEAD ~ an aluminum nitride } comprising layer over a semiconductor substrate , { TAIL ~ a method } of forming DRAM circuitry , DRAM circuitry , a method of forming a field emission device , and a field emission device
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