Referring to FIG 2A, a stack structure, which includes an alternating stack of a plurality of {HEAD ~ hole supply layers} 125 and a plurality of {TAIL ~ sacrificial layers} 130, and an interlayer insulating film 120 are selectively etched to form channel holes H1 which expose the substrate 100 
Referring to FIG 2A , a stack structure , which includes an alternating stack of a plurality of { HEAD ~ hole supply layers } 125 and a plurality of { TAIL ~ sacrificial layers } 130 , and an interlayer insulating film 120 are selectively etched to form channel holes H1 which expose the substrate 100
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH