A field effect device structure comprising a semiconductor p n junction adjacent to an insulated gate electrode is utilized in which a depletion region is created under the gate electrode in {HEAD ~ the presence} of {TAIL ~ alternating forward and reverse biasing} of the p n junction 
A field effect device structure comprising a semiconductor p n junction adjacent to an insulated gate electrode is utilized in which a depletion region is created under the gate electrode in { HEAD ~ the presence } of { TAIL ~ alternating forward and reverse biasing } of the p n junction
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