Accordingly, {HEAD ~ an object} of {TAIL ~ the present invention} is to provide a process for forming a thin film of amorphous silicon of a uniform thickness over the entire surface of a relatively large insulating substrate 
Accordingly , { HEAD ~ an object } of { TAIL ~ the present invention } is to provide a process for forming a thin film of amorphous silicon of a uniform thickness over the entire surface of a relatively large insulating substrate
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