The power semiconductor device 8, wherein said {HEAD ~ high impurity concentration} well region is not formed under {TAIL ~ said gate} insulating film provided on said well region 
The power semiconductor device 8 , wherein said { HEAD ~ high impurity concentration } well region is not formed under { TAIL ~ said gate } insulating film provided on said well region
OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH