A gate structure and a cap layer are formed, wherein the gate structure is disposed across parts of the fin shaped structure and parts of {HEAD ~ the substrate}, the cap layer is on the gate structure, and the cap layer includes a first cap layer on {TAIL ~ the gate structure} and a second cap layer on the first cap layer 
A gate structure and a cap layer are formed , wherein the gate structure is disposed across parts of the fin shaped structure and parts of { HEAD ~ the substrate } , the cap layer is on the gate structure , and the cap layer includes a first cap layer on { TAIL ~ the gate structure } and a second cap layer on the first cap layer
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH