The invention is directed to a process whereby layers of {TAIL ~ borophosphosilicate glass} are deposited at low pressure on a plurality of silicon wafers located within {HEAD ~ a process tube} 
The invention is directed to a process whereby layers of { TAIL ~ borophosphosilicate glass } are deposited at low pressure on a plurality of silicon wafers located within { HEAD ~ a process tube }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD