A method 3 wherein {HEAD ~ the irradiating step} of said second portion with the laser light is carried out after etching a silicon oxide film formed on {TAIL ~ the second portion} of the semiconductor film due to the oxidizing step 
A method 3 wherein { HEAD ~ the irradiating step } of said second portion with the laser light is carried out after etching a silicon oxide film formed on { TAIL ~ the second portion } of the semiconductor film due to the oxidizing step
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