The present invention relates to a method for epitaxially growing a semiconductor metal compound layer, in particular, a semiconductor metal compound layer with high crystal orientation, in {HEAD ~ a surface portion} of {TAIL ~ a semiconductor layer} 
The present invention relates to a method for epitaxially growing a semiconductor metal compound layer , in particular , a semiconductor metal compound layer with high crystal orientation , in { HEAD ~ a surface portion } of { TAIL ~ a semiconductor layer }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL