More specifically, the present invention relates to an IGBT with {TAIL ~ reduced channel length} or deeper enhanced concentration region that improves {HEAD ~ Vce,on} and that improves switching power loss 
More specifically , the present invention relates to an IGBT with { TAIL ~ reduced channel length } or deeper enhanced concentration region that improves { HEAD ~ Vce , on } and that improves switching power loss
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH