The flow of {TAIL ~ reactant gases} is maintained and the temperature of 425° C. is maintained until a desired thickness of {HEAD ~ borophosphosilicate glass} is formed on the wafer 
The flow of { TAIL ~ reactant gases } is maintained and the temperature of 425 ° C. is maintained until a desired thickness of { HEAD ~ borophosphosilicate glass } is formed on the wafer
OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH