doping first impurity elements at a first concentration providing n {HEAD ~ type} into {TAIL ~ the semiconductor layer} using the gate electrode as a mask to form a first n type impurity region 
doping first impurity elements at a first concentration providing n { HEAD ~ type } into { TAIL ~ the semiconductor layer } using the gate electrode as a mask to form a first n type impurity region
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH