{TAIL ~ The method} includes applying a first gate voltage across a gate of the semiconductor transistor 22 to allow the first voltage to form a first write current first time duration from the sourceline SL to {HEAD ~ the bitline} BL and writing a first data state to the resistive sense memory cell 10 
{ TAIL ~ The method } includes applying a first gate voltage across a gate of the semiconductor transistor 22 to allow the first voltage to form a first write current first time duration from the sourceline SL to { HEAD ~ the bitline } BL and writing a first data state to the resistive sense memory cell 10
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