According to the method, {HEAD ~ a gate stack} is formed on {TAIL ~ a semiconductor substrate}, and impurity ions are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate 
According to the method , { HEAD ~ a gate stack } is formed on { TAIL ~ a semiconductor substrate } , and impurity ions are implanted at a predetermined angle to form a source / drain junction in the semiconductor substrate
OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD REL REL REL TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH