{HEAD ~ A source/drain impurity area} may be formed over a second silicon layer on {TAIL ~ both sides} of a gate electrode 
{ HEAD ~ A source / drain impurity area } may be formed over a second silicon layer on { TAIL ~ both sides } of a gate electrode
HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH REL OTH OTH OTH OTH OTH REL TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH OTH