The present invention was made in light of the foregoing circumstances, and {HEAD ~ its object} is to offer {TAIL ~ an epitaxial SiC single crystal substrate} which reduces threading edge dislocation arrays in SiC epitaxial film, and a method of manufacture of the epitaxial SiC single crystal substrate 
The present invention was made in light of the foregoing circumstances , and { HEAD ~ its object } is to offer { TAIL ~ an epitaxial SiC single crystal substrate } which reduces threading edge dislocation arrays in SiC epitaxial film , and a method of manufacture of the epitaxial SiC single crystal substrate
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