The methods include absorbing a first silicon source gas onto the substrate, oxidizing the first absorbed layer to form a silicon oxide layer, absorbing a second silicon source gas onto {HEAD ~ the substrate} and reducing the second absorbed layer to form {TAIL ~ a silicon layer} 
The methods include absorbing a first silicon source gas onto the substrate , oxidizing the first absorbed layer to form a silicon oxide layer , absorbing a second silicon source gas onto { HEAD ~ the substrate } and reducing the second absorbed layer to form { TAIL ~ a silicon layer }
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL