Then the antireflection film 7 of silicon nitride having a thickness of {TAIL ~ 1.8 μm} is formed on {HEAD ~ the exposed surface} of the P+ type region 6 by plasma CVD 
Then the antireflection film 7 of silicon nitride having a thickness of { TAIL ~ 1.8 μm } is formed on { HEAD ~ the exposed surface } of the P+ type region 6 by plasma CVD
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL OTH OTH OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH OTH