{HEAD ~ The invention} generally relates to multi layered semiconductor structures and more particularly to {TAIL ~ a method} for preventing or avoiding the presence of unetched polymer residues including photoresist remaining in anisotropically etched semiconductor features including trench line features formed in a dual damascene process 
{ HEAD ~ The invention } generally relates to multi layered semiconductor structures and more particularly to { TAIL ~ a method } for preventing or avoiding the presence of unetched polymer residues including photoresist remaining in anisotropically etched semiconductor features including trench line features formed in a dual damascene process
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