source and drain extension regions of a p type diffusion region formed in {TAIL ~ said silicon substrate} at {HEAD ~ respective lateral sides} of said gate electrode across said channel region 
source and drain extension regions of a p type diffusion region formed in { TAIL ~ said silicon substrate } at { HEAD ~ respective lateral sides } of said gate electrode across said channel region
OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH OTH TAIL TAIL TAIL TAIL TAIL TAIL TAIL OTH HEAD HEAD HEAD HEAD HEAD HEAD HEAD OTH OTH OTH OTH OTH OTH OTH OTH