Noble metal are covered by carbon monoxide very quickly. Metallic elements, including metalloids (metals usually considered noble bolded, predictions for superheavy elements italicised): The columns "group" and "period" denote its position in the periodic table, hence electronic configuration. The simplified "reaction"s, listed in the next column, can also be read in detail from the Pourbaix diagrams of the considered element in water. Finally the column "potential" indicates the electric potential of the element measured against a Standard hydrogen electrode. All missing elements in this table are either not metals or have a negative standard potential. Arsenic, antimony and tellurium are considered to
Silicon-germanium Silicon-germanium SiGe ( or ), or silicon-germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form SiGe. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture. SiGe is also used as a thermoelectric material for high temperature applications (>700 K). The use of silicon-germanium as a semiconductor was championed by