Lists of metalloids cluster. Cluster 1 (93%) = B, Si, Ge, As, Sb, Te; cluster 2 (44%) = Po, At; cluster 3 (24%) = Se; cluster 4 (9%) = C, Al; cluster 5 (5%) = Be, P, Bi; cluster 6 (3%) = Sn; and cluster 7 (1%) = H, Ga, S, I, Pb, Fl, Mc, Lv, Ts. The resulting geometric trend line has the formula y = 199.47e and an R value of 0.9962. The elements commonly classified as metalloids are boron, silicon, germanium, arsenic, antimony and tellurium. The status of polonium and astatine is not settled. Most authors recognise one or the
Silicon-germanium silicon-only technology. Silicon Germanium-on-insulator (SGOI) is a technology analogous to the Silicon-On-Insulator (SOI) technology currently employed in computer chips. SGOI increases the speed of the transistors inside microchips by straining the crystal lattice under the MOS transistor gate, resulting in improved electron mobility and higher drive currents. SiGe MOSFETs can also provide lower junction leakage due to the lower band gap value of SiGe. However, a major issue with SGOI MOSFETs is the inability to form stable oxides with silicon germanium using standard silicon oxidation processing. A silicon germanium thermoelectric device, MHW-RTG3, was used in the Voyager 1 and 2