Vapour-pressure deficit the plant may dry out and die. For this reason the ideal range for VPD in a greenhouse is from 0.45 kPa to 1.25 kPa, ideally sitting at around 0.85 kPa. As a general rule, most plants grow well at VPDs of between 0.8 and 0.95 kPa. In ecology, it is the difference between the actual water vapour pressure and the saturation water vapour pressure at a particular temperature. Unlike relative humidity, vapour-pressure deficit has a simple nearly straight-line relationship to the rate of evapotranspiration and other measures of evaporation. To compute the VPD, we need the ambient (greenhouse) air
Metalorganic vapour-phase epitaxy Metalorganic vapour-phase epitaxy Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a highly complex process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable