Block (periodic table) elements that are commonly recognized as metalloids are in the p-block: boron, silicon, germanium, arsenic, antimony, and tellurium. Metalloids tend to have lower electrical conductivity than metals, yet often higher than nonmetals. They tend to form chemical bonds similarly to nonmetals, but may dissolve in metallic alloys without covalent or ionic bonding. Metalloid additives can improve properties of metallic alloys, sometimes paradoxically to their own apparent properties. Some may give a better electrical conductivity, higher corrosion resistance, ductility, or fluidity in molten state, etc. to the alloy. Boron has many carbon-like properties, but is very rare. It has many uses,
Silicon-germanium silicon-only technology. Silicon Germanium-on-insulator (SGOI) is a technology analogous to the Silicon-On-Insulator (SOI) technology currently employed in computer chips. SGOI increases the speed of the transistors inside microchips by straining the crystal lattice under the MOS transistor gate, resulting in improved electron mobility and higher drive currents. SiGe MOSFETs can also provide lower junction leakage due to the lower band gap value of SiGe. However, a major issue with SGOI MOSFETs is the inability to form stable oxides with silicon germanium using standard silicon oxidation processing. A silicon germanium thermoelectric device, MHW-RTG3, was used in the Voyager 1 and 2