Noble metal are covered by carbon monoxide very quickly. Metallic elements, including metalloids (metals usually considered noble bolded, predictions for superheavy elements italicised): The columns "group" and "period" denote its position in the periodic table, hence electronic configuration. The simplified "reaction"s, listed in the next column, can also be read in detail from the Pourbaix diagrams of the considered element in water. Finally the column "potential" indicates the electric potential of the element measured against a Standard hydrogen electrode. All missing elements in this table are either not metals or have a negative standard potential. Arsenic, antimony and tellurium are considered to
Silicon-germanium silicon-only technology. Silicon Germanium-on-insulator (SGOI) is a technology analogous to the Silicon-On-Insulator (SOI) technology currently employed in computer chips. SGOI increases the speed of the transistors inside microchips by straining the crystal lattice under the MOS transistor gate, resulting in improved electron mobility and higher drive currents. SiGe MOSFETs can also provide lower junction leakage due to the lower band gap value of SiGe. However, a major issue with SGOI MOSFETs is the inability to form stable oxides with silicon germanium using standard silicon oxidation processing. A silicon germanium thermoelectric device, MHW-RTG3, was used in the Voyager 1 and 2