Origin and use of the term metalloid antimony and tellurium, was recorded merely on a 'sometimes' basis. Use of the term metalloid subsequently underwent a period of great flux up to 1940. Consensus as to its application to intermediate or borderline elements did not occur until the ensuing years, between 1940 and 1960. In 1947, Pauling included a reference to metalloids in his classic and influential textbook, "General chemistry: An introduction to descriptive chemistry and modern chemical theory." He described them as 'elements with intermediate properties ... occupy[ing] a diagonal region [on the periodic table], which includes boron, silicon, germanium, arsenic, antimony, tellurium, and polonium.' In 1959
Silicon-germanium silicon-only technology. Silicon Germanium-on-insulator (SGOI) is a technology analogous to the Silicon-On-Insulator (SOI) technology currently employed in computer chips. SGOI increases the speed of the transistors inside microchips by straining the crystal lattice under the MOS transistor gate, resulting in improved electron mobility and higher drive currents. SiGe MOSFETs can also provide lower junction leakage due to the lower band gap value of SiGe. However, a major issue with SGOI MOSFETs is the inability to form stable oxides with silicon germanium using standard silicon oxidation processing. A silicon germanium thermoelectric device, MHW-RTG3, was used in the Voyager 1 and 2