Vapour-pressure deficit the plant may dry out and die. For this reason the ideal range for VPD in a greenhouse is from 0.45 kPa to 1.25 kPa, ideally sitting at around 0.85 kPa. As a general rule, most plants grow well at VPDs of between 0.8 and 0.95 kPa. In ecology, it is the difference between the actual water vapour pressure and the saturation water vapour pressure at a particular temperature. Unlike relative humidity, vapour-pressure deficit has a simple nearly straight-line relationship to the rate of evapotranspiration and other measures of evaporation. To compute the VPD, we need the ambient (greenhouse) air
Hydride vapour phase epitaxy Hydride vapour phase epitaxy Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides. Carrier gasses commonly used include ammonia, hydrogen and various chlorides. HVPE technology can significantly reduce the cost of production compared to the most common method of vapor deposition of organometallic compounds (MOCVD). Cost reduction is achieved by significantly reducing the consumption of NH3, cheaper