Origin and use of the term metalloid antimony and tellurium, was recorded merely on a 'sometimes' basis. Use of the term metalloid subsequently underwent a period of great flux up to 1940. Consensus as to its application to intermediate or borderline elements did not occur until the ensuing years, between 1940 and 1960. In 1947, Pauling included a reference to metalloids in his classic and influential textbook, "General chemistry: An introduction to descriptive chemistry and modern chemical theory." He described them as 'elements with intermediate properties ... occupy[ing] a diagonal region [on the periodic table], which includes boron, silicon, germanium, arsenic, antimony, tellurium, and polonium.' In 1959
GeSbTe antimony and tellurium, such as tris-dimethylamino antimony (TDMASb) and di-isopropyl telluride (DIPTe) respectively, to grow GeSbTe and other chalcogenide films of very high purity by metalorganic chemical vapor deposition (MOCVD). Dimethylamino germanium trichloride (DMAGeC) is also reported as the chloride containing and a superior dimethylaminogermanium precursor for Ge deposition by MOCVD. GeSbTe is a ternary compound of germanium, antimony, and tellurium, with composition GeTe-SbTe. In the GeSbTe system, there is a pseudo-line as shown upon which most of the alloys lie. Moving down this pseudo-line, it can be seen that as we go from SbTe to GeTe, the melting point