Graphene smaller amplitude and higher frequency. This phenomenon, named "membrane effect", was predicted by Lifshitz in 1952. A prediction that was published in 2015 suggested a melting point of ≈4125 K. Recent and more sophisticated modelling has increased this temperature to at least 5000 K. At 6000 K (the sun's surface having an effective temperature of 5,777 K) graphene melts into an agglomeration of loosely coupled doubled bonded chains, before becoming a gas. The carbon–carbon bond length in graphene is about 0.142 nanometers. Graphene sheets stack to form graphite with an interplanar spacing of . Graphene is the strongest material ever
Equivalent oxide thickness Equivalent oxide thickness An Equivalent oxide thickness is a distance, usually given in nanometers (nm), which indicates how thick a silicon oxide film would need to be to produce the same effect as the high-κ material being used. The term is often used when describing field effect transistors which rely on an electrically insulating pad of material between a gate and a doped semiconducting region. Device performance has typically been improved by reducing the thickness of a silicon oxide insulating pad. As the thickness approached 5–10 nm, leakage became a problem and alternate materials were necessary to increase the thickness