Sound amplification by stimulated emission of radiation 0.3 eV. For the same scheme, the usage of a semiconductor heterostructure (layers of different semiconductors) with narrow gap indirect in momentum space between valence and conduction bands may be more effective. This could be more promising since the spatial separation of the layers provides a possibility of tuning the interband transition into resonance by an external electric field. An essential statement here is that this proposed phonon laser can operate only if the temperature is much lower than the energy gap in the semiconductor. During the analysis of this theoretical scheme several assumptions were introduced for simplicity reasons. The
Sound amplification by stimulated emission of radiation means that, since bosons with the same energy can occupy the same place in space, phonons and photons are force carrier particles and they have integer spins. There are more allowed states available for occupancy in a phonon field than in a photon field. Therefore, since the density of terminal states in the phonon field exceeds that in a photon field (by up to ~10), phonon emission is by far the more likely event. We could also imagine a concept where the excitation of an electron briefly leads to vibration of the lattice and thus to phonon generation. The vibration