Sound amplification by stimulated emission of radiation 0.3 eV. For the same scheme, the usage of a semiconductor heterostructure (layers of different semiconductors) with narrow gap indirect in momentum space between valence and conduction bands may be more effective. This could be more promising since the spatial separation of the layers provides a possibility of tuning the interband transition into resonance by an external electric field. An essential statement here is that this proposed phonon laser can operate only if the temperature is much lower than the energy gap in the semiconductor. During the analysis of this theoretical scheme several assumptions were introduced for simplicity reasons. The
Stimulated emission to the number of atoms in the lower state, "N". Einstein showed that the coefficient for this transition must be identical to that for stimulated emission: Thus absorption and stimulated emission are reverse processes proceeding at somewhat different rates. Another way of viewing this is to look at the "net" stimulated emission or absorption viewing it as a single process. The net rate of transitions from "E" to "E" due to this combined process can be found by adding their respective rates, given above: Thus a net power is released into the electric field equal to the photon energy "hν"