Sound amplification by stimulated emission of radiation was first experimentally demonstrated in the Gigahertz range in 2009. Announced in 2010, two independent groups came up with two different devices that produce coherent phonons at any frequency in the range megahertz to terahertz. One group from the University of Nottingham consisted of A.J. Kent and his colleagues R.P. Beardsley, A.V. Akimov, W. Maryam and M. Henini. The other group from the California Institute of Technology (Caltech) consisted of Ivan S. Grudinin, Hansuek Lee, O. Painter and Kerry J. Vahala from Caltech implemented a study on Phonon Laser Action in a tunable two-level system. The University of Nottingham device
Sound amplification by stimulated emission of radiation of direct semiconductors. The reasoning behind that comes from the fact that, due to the k-selection rule in semiconductors, interband transitions with the production of only one phonon can be only those that produce an optical phonon. However, optical phonons have a short life-time (they split into two due to anharmonicity) and therefore they add some important complications. Here we can note that even in the case of multi-stage process of acoustic phonon creation it is possible to create SASER. Examples of narrow-gap indirect semiconductors that can be used are chalcogenides PbTe, PbSe and PbS with energy gap 0.15 –