Sound amplification by stimulated emission of radiation 0.3 eV. For the same scheme, the usage of a semiconductor heterostructure (layers of different semiconductors) with narrow gap indirect in momentum space between valence and conduction bands may be more effective. This could be more promising since the spatial separation of the layers provides a possibility of tuning the interband transition into resonance by an external electric field. An essential statement here is that this proposed phonon laser can operate only if the temperature is much lower than the energy gap in the semiconductor. During the analysis of this theoretical scheme several assumptions were introduced for simplicity reasons. The
Sound amplification by stimulated emission of radiation emission takes place in the structure under electrical pumping. A bias voltage is applied to a weakly coupled n-doped GaAs/AlAs superlattice and increases the amplitude of the coherent hypersound oscillations generated by a femtosecond optical pulse. An evidence of hypersound amplification by stimulated emission of phonons emerges, in a system where the inversion of the electron populations for phonon-assisted transitions exists. This evidence is provided by the bias-induced amplitude increase and experimentally observer spectral narrowing of the superlattice phonon mode with a frequency of 441 GHz. The main target of this type of experiments is to highlight the realization probability