Sound amplification by stimulated emission of radiation 0.3 eV. For the same scheme, the usage of a semiconductor heterostructure (layers of different semiconductors) with narrow gap indirect in momentum space between valence and conduction bands may be more effective. This could be more promising since the spatial separation of the layers provides a possibility of tuning the interband transition into resonance by an external electric field. An essential statement here is that this proposed phonon laser can operate only if the temperature is much lower than the energy gap in the semiconductor. During the analysis of this theoretical scheme several assumptions were introduced for simplicity reasons. The
Sound amplification by stimulated emission of radiation electrons become localized in the quantum wells and vertical electron transport takes place via hopping between neighboring quantum wells, which may be phonon assisted. As it had been shown previously, under these conditions stimulated phonon emission can become the dominant phonon-assisted hoping process for phonons of an energy value close to the Stark splitting. Thus, coherent phonon amplification is theoretically possible in this type of system. Together with the increase in amplitude, the spectrum of the bias-induced oscillations is narrower than the spectrum of the coherent phonons at zero bias. This shows that coherent amplification of phonons due to stimulated