Sound amplification by stimulated emission of radiation vector in the second proposed scheme, is supposed to be determined by magnitude of in-plane magnetic field. Therefore, such kind of SASER is tunable (i.e. its wavelength of operation can be altered in a controlled manner). Common semiconductor lasers can be realised only in direct gap semiconductors. The reasoning behind that is that a pair of electron and hole near minima of their bands in an indirect gap semiconductor can recombine only with production of a phonon and a photon, due to energy and momentum conservation laws. This kind of process is weak in comparison with electron-hole recombination in a
Sound amplification by stimulated emission of radiation emission takes place in the structure under electrical pumping. A bias voltage is applied to a weakly coupled n-doped GaAs/AlAs superlattice and increases the amplitude of the coherent hypersound oscillations generated by a femtosecond optical pulse. An evidence of hypersound amplification by stimulated emission of phonons emerges, in a system where the inversion of the electron populations for phonon-assisted transitions exists. This evidence is provided by the bias-induced amplitude increase and experimentally observer spectral narrowing of the superlattice phonon mode with a frequency of 441 GHz. The main target of this type of experiments is to highlight the realization probability