Sound amplification by stimulated emission of radiation (TA) phonons is better because TA phonons have lower energy and the greater life-time than LA phonons. Therefore, their interaction with the electronic subsystem is weak. In addition, simpler quantitative evaluations require a pumping of direct exciton level performed by a laser irradiation. A further analysis of the scheme can help us to establish differential equations for direct exciton, indirect exciton and phonon modes. The solution of these equations gives that separately phonon and indirect exciton modes have no definite phase and only the sum of their phases is defined. The aim here is to check if the operation of
Sound amplification by stimulated emission of radiation of direct semiconductors. The reasoning behind that comes from the fact that, due to the k-selection rule in semiconductors, interband transitions with the production of only one phonon can be only those that produce an optical phonon. However, optical phonons have a short life-time (they split into two due to anharmonicity) and therefore they add some important complications. Here we can note that even in the case of multi-stage process of acoustic phonon creation it is possible to create SASER. Examples of narrow-gap indirect semiconductors that can be used are chalcogenides PbTe, PbSe and PbS with energy gap 0.15 –