Sound amplification by stimulated emission of radiation vector in the second proposed scheme, is supposed to be determined by magnitude of in-plane magnetic field. Therefore, such kind of SASER is tunable (i.e. its wavelength of operation can be altered in a controlled manner). Common semiconductor lasers can be realised only in direct gap semiconductors. The reasoning behind that is that a pair of electron and hole near minima of their bands in an indirect gap semiconductor can recombine only with production of a phonon and a photon, due to energy and momentum conservation laws. This kind of process is weak in comparison with electron-hole recombination in a
Sound amplification by stimulated emission of radiation short-wavelength (in the terahertz range) phonons are produced. Since the electrons are confined to the quantum wells existing within the lattice, the transmission of their energy depends upon the phonons they generate. As these phonons strike other layers in the lattice, they excite electrons, which produce further phonons, which go on to excite more electrons, and so on. Eventually, a very narrow beam of high-frequency ultrasound exits the device. Semiconductor superlattices are used as acoustic mirrors. These superlattice structures must be in the right size obeying the theory of multilayer distributed Bragg reflector, in similarity with multilayer dielectric mirrors in