Sound amplification by stimulated emission of radiation 0.3 eV. For the same scheme, the usage of a semiconductor heterostructure (layers of different semiconductors) with narrow gap indirect in momentum space between valence and conduction bands may be more effective. This could be more promising since the spatial separation of the layers provides a possibility of tuning the interband transition into resonance by an external electric field. An essential statement here is that this proposed phonon laser can operate only if the temperature is much lower than the energy gap in the semiconductor. During the analysis of this theoretical scheme several assumptions were introduced for simplicity reasons. The
Sound amplification by stimulated emission of radiation operates at about 440 GHz, while the Caltech device operates in the megahertz range. According to a member of the Nottingham group, the two approaches are complementary and it should be possible to use one device or the other to create coherent phonons at any frequency in the megahertz to terahertz range. A significant result rises from the operating frequency of these devices. The differences between the two devices suggest that SASERs could be made to operate over a wide range of frequencies. Work on the SASER continues at the University of Nottingham, the "Lashkarev Institute of Semiconductor Physics" at