Sound amplification by stimulated emission of radiation 0.3 eV. For the same scheme, the usage of a semiconductor heterostructure (layers of different semiconductors) with narrow gap indirect in momentum space between valence and conduction bands may be more effective. This could be more promising since the spatial separation of the layers provides a possibility of tuning the interband transition into resonance by an external electric field. An essential statement here is that this proposed phonon laser can operate only if the temperature is much lower than the energy gap in the semiconductor. During the analysis of this theoretical scheme several assumptions were introduced for simplicity reasons. The
Sound amplification by stimulated emission of radiation semiconductor heterostructure where the tuning into resonance of one-phonon transition of electron - hole recombination can be carried out by external pressure, magnetic or electric fields. The second scheme uses one-phonon transition between direct and indirect exciton levels in coupled quantum wells. We note that an exciton is an electrically neutral quasiparticle that describes an elementary excitation of condensed matter. It can transport energy without transporting net electric charge. The tuning into the resonance of this transition can be accomplished by engineering of dispersion of indirect exciton by external in-plane magnetic and normal electric fields. The magnitude of phonon wave