Sound amplification by stimulated emission of radiation vector in the second proposed scheme, is supposed to be determined by magnitude of in-plane magnetic field. Therefore, such kind of SASER is tunable (i.e. its wavelength of operation can be altered in a controlled manner). Common semiconductor lasers can be realised only in direct gap semiconductors. The reasoning behind that is that a pair of electron and hole near minima of their bands in an indirect gap semiconductor can recombine only with production of a phonon and a photon, due to energy and momentum conservation laws. This kind of process is weak in comparison with electron-hole recombination in a
Sound amplification by stimulated emission of radiation dispersion law away from the radiation zone. The importance of this, lies on the fact that electric and in-plane magnetic fields normal to coupled quantum wells, can control the dispersion of indirect exciton. Normal electric field is needed for tuning the transition: direct exciton --> indirect exciton + phonon into resonance and its magnitude can form a linear function with the magnitude of in-plane magnetic field. We note that the mathematical analysis of this scheme considers of longitudinal acoustic (LA) phonons instead of transverse acoustic (TA) phonons. This aims to more simple numerical estimations. Generally, the preference in transverse acoustic