Sound amplification by stimulated emission of radiation 0.3 eV. For the same scheme, the usage of a semiconductor heterostructure (layers of different semiconductors) with narrow gap indirect in momentum space between valence and conduction bands may be more effective. This could be more promising since the spatial separation of the layers provides a possibility of tuning the interband transition into resonance by an external electric field. An essential statement here is that this proposed phonon laser can operate only if the temperature is much lower than the energy gap in the semiconductor. During the analysis of this theoretical scheme several assumptions were introduced for simplicity reasons. The
Stimulated emission frequency, phase, polarization, and direction of propagation as the incident photons. The photons involved are thus mutually coherent. When a population inversion (formula_6) is present, therefore, optical amplification of incident radiation will take place. Although energy generated by stimulated emission is always at the exact frequency of the field which has stimulated it, the above rate equation refers only to excitation at the particular optical frequency formula_9 corresponding to the energy of the transition. At frequencies offset from formula_9 the strength of stimulated (or spontaneous) emission will be decreased according to the so-called line shape. Considering only homogeneous broadening affecting