Sound amplification by stimulated emission of radiation 0.3 eV. For the same scheme, the usage of a semiconductor heterostructure (layers of different semiconductors) with narrow gap indirect in momentum space between valence and conduction bands may be more effective. This could be more promising since the spatial separation of the layers provides a possibility of tuning the interband transition into resonance by an external electric field. An essential statement here is that this proposed phonon laser can operate only if the temperature is much lower than the energy gap in the semiconductor. During the analysis of this theoretical scheme several assumptions were introduced for simplicity reasons. The
Sound amplification by stimulated emission of radiation of direct semiconductors. The reasoning behind that comes from the fact that, due to the k-selection rule in semiconductors, interband transitions with the production of only one phonon can be only those that produce an optical phonon. However, optical phonons have a short life-time (they split into two due to anharmonicity) and therefore they add some important complications. Here we can note that even in the case of multi-stage process of acoustic phonon creation it is possible to create SASER. Examples of narrow-gap indirect semiconductors that can be used are chalcogenides PbTe, PbSe and PbS with energy gap 0.15 –