Sound amplification by stimulated emission of radiation vector in the second proposed scheme, is supposed to be determined by magnitude of in-plane magnetic field. Therefore, such kind of SASER is tunable (i.e. its wavelength of operation can be altered in a controlled manner). Common semiconductor lasers can be realised only in direct gap semiconductors. The reasoning behind that is that a pair of electron and hole near minima of their bands in an indirect gap semiconductor can recombine only with production of a phonon and a photon, due to energy and momentum conservation laws. This kind of process is weak in comparison with electron-hole recombination in a
Sound amplification by stimulated emission of radiation semiconductor heterostructure where the tuning into resonance of one-phonon transition of electron - hole recombination can be carried out by external pressure, magnetic or electric fields. The second scheme uses one-phonon transition between direct and indirect exciton levels in coupled quantum wells. We note that an exciton is an electrically neutral quasiparticle that describes an elementary excitation of condensed matter. It can transport energy without transporting net electric charge. The tuning into the resonance of this transition can be accomplished by engineering of dispersion of indirect exciton by external in-plane magnetic and normal electric fields. The magnitude of phonon wave