Sound amplification by stimulated emission of radiation 0.3 eV. For the same scheme, the usage of a semiconductor heterostructure (layers of different semiconductors) with narrow gap indirect in momentum space between valence and conduction bands may be more effective. This could be more promising since the spatial separation of the layers provides a possibility of tuning the interband transition into resonance by an external electric field. An essential statement here is that this proposed phonon laser can operate only if the temperature is much lower than the energy gap in the semiconductor. During the analysis of this theoretical scheme several assumptions were introduced for simplicity reasons. The
Stimulated emission an atomic or molecular resonance, the spectral line shape function is described as a Lorentzian distribution where formula_12 is the full width at half maximum or FWHM bandwidth. The peak value of the Lorentzian line shape occurs at the line center, formula_13. A line shape function can be normalized so that its value at formula_9 is unity; in the case of a Lorentzian we obtain Thus stimulated emission at frequencies away from formula_9 is reduced by this factor. In practice there may also be broadening of the line shape due to inhomogeneous broadening, most notably due to the Doppler effect