Sound amplification by stimulated emission of radiation (TA) phonons is better because TA phonons have lower energy and the greater life-time than LA phonons. Therefore, their interaction with the electronic subsystem is weak. In addition, simpler quantitative evaluations require a pumping of direct exciton level performed by a laser irradiation. A further analysis of the scheme can help us to establish differential equations for direct exciton, indirect exciton and phonon modes. The solution of these equations gives that separately phonon and indirect exciton modes have no definite phase and only the sum of their phases is defined. The aim here is to check if the operation of
Sound amplification by stimulated emission of radiation energy associated with the vibrational modes of the lattice. Such levels can be formed by conduction and valence bands in narrow gap indirect semiconductors. The energy gap in a semiconductor under the influence of pressure or magnetic field slightly varies and thus does not deserve any consideration. On the other hand, in narrow-gap semiconductors this variation of energy is considerable and therefore external pressure or magnetic field may serve the purpose of tuning into the resonance of one-phonon interband transition. Note that interband transition is the transition between the conduction and valence band. This scheme considers of indirect semiconductors instead