Sound amplification by stimulated emission of radiation vector in the second proposed scheme, is supposed to be determined by magnitude of in-plane magnetic field. Therefore, such kind of SASER is tunable (i.e. its wavelength of operation can be altered in a controlled manner). Common semiconductor lasers can be realised only in direct gap semiconductors. The reasoning behind that is that a pair of electron and hole near minima of their bands in an indirect gap semiconductor can recombine only with production of a phonon and a photon, due to energy and momentum conservation laws. This kind of process is weak in comparison with electron-hole recombination in a
Sound amplification by stimulated emission of radiation of direct semiconductors. The reasoning behind that comes from the fact that, due to the k-selection rule in semiconductors, interband transitions with the production of only one phonon can be only those that produce an optical phonon. However, optical phonons have a short life-time (they split into two due to anharmonicity) and therefore they add some important complications. Here we can note that even in the case of multi-stage process of acoustic phonon creation it is possible to create SASER. Examples of narrow-gap indirect semiconductors that can be used are chalcogenides PbTe, PbSe and PbS with energy gap 0.15 –