Sound amplification by stimulated emission of radiation 0.3 eV. For the same scheme, the usage of a semiconductor heterostructure (layers of different semiconductors) with narrow gap indirect in momentum space between valence and conduction bands may be more effective. This could be more promising since the spatial separation of the layers provides a possibility of tuning the interband transition into resonance by an external electric field. An essential statement here is that this proposed phonon laser can operate only if the temperature is much lower than the energy gap in the semiconductor. During the analysis of this theoretical scheme several assumptions were introduced for simplicity reasons. The
Sound amplification by stimulated emission of radiation energy associated with the vibrational modes of the lattice. Such levels can be formed by conduction and valence bands in narrow gap indirect semiconductors. The energy gap in a semiconductor under the influence of pressure or magnetic field slightly varies and thus does not deserve any consideration. On the other hand, in narrow-gap semiconductors this variation of energy is considerable and therefore external pressure or magnetic field may serve the purpose of tuning into the resonance of one-phonon interband transition. Note that interband transition is the transition between the conduction and valence band. This scheme considers of indirect semiconductors instead