Sound amplification by stimulated emission of radiation vector in the second proposed scheme, is supposed to be determined by magnitude of in-plane magnetic field. Therefore, such kind of SASER is tunable (i.e. its wavelength of operation can be altered in a controlled manner). Common semiconductor lasers can be realised only in direct gap semiconductors. The reasoning behind that is that a pair of electron and hole near minima of their bands in an indirect gap semiconductor can recombine only with production of a phonon and a photon, due to energy and momentum conservation laws. This kind of process is weak in comparison with electron-hole recombination in a
Sound amplification by stimulated emission of radiation energy associated with the vibrational modes of the lattice. Such levels can be formed by conduction and valence bands in narrow gap indirect semiconductors. The energy gap in a semiconductor under the influence of pressure or magnetic field slightly varies and thus does not deserve any consideration. On the other hand, in narrow-gap semiconductors this variation of energy is considerable and therefore external pressure or magnetic field may serve the purpose of tuning into the resonance of one-phonon interband transition. Note that interband transition is the transition between the conduction and valence band. This scheme considers of indirect semiconductors instead