Sound amplification by stimulated emission of radiation 0.3 eV. For the same scheme, the usage of a semiconductor heterostructure (layers of different semiconductors) with narrow gap indirect in momentum space between valence and conduction bands may be more effective. This could be more promising since the spatial separation of the layers provides a possibility of tuning the interband transition into resonance by an external electric field. An essential statement here is that this proposed phonon laser can operate only if the temperature is much lower than the energy gap in the semiconductor. During the analysis of this theoretical scheme several assumptions were introduced for simplicity reasons. The
Stimulated emission given by where the proportionality constant "B" is known as the "Einstein B coefficient" for that particular transition, and "ρ"("ν") is the radiation density of the incident field at frequency "ν". The rate of emission is thus proportional to the number of atoms in the excited state "N", and to the density of incident photons. At the same time, there will be a process of atomic absorption which "removes" energy from the field while raising electrons from the lower state to the upper state. Its rate is given by an essentially identical equation, The rate of absorption is thus proportional