Sound amplification by stimulated emission of radiation 0.3 eV. For the same scheme, the usage of a semiconductor heterostructure (layers of different semiconductors) with narrow gap indirect in momentum space between valence and conduction bands may be more effective. This could be more promising since the spatial separation of the layers provides a possibility of tuning the interband transition into resonance by an external electric field. An essential statement here is that this proposed phonon laser can operate only if the temperature is much lower than the energy gap in the semiconductor. During the analysis of this theoretical scheme several assumptions were introduced for simplicity reasons. The
Stimulated emission of energy levels 1 and 2, respectively. The intensity (in watts per square meter) of the stimulated emission is governed by the following differential equation: as long as the intensity "I"("z") is small enough so that it does not have a significant effect on the magnitude of the population inversion. Grouping the first two factors together, this equation simplifies as where is the "small-signal gain coefficient" (in units of radians per meter). We can solve the differential equation using separation of variables: Integrating, we find: or where The saturation intensity "I" is defined as the input intensity at which the