Sound amplification by stimulated emission of radiation 0.3 eV. For the same scheme, the usage of a semiconductor heterostructure (layers of different semiconductors) with narrow gap indirect in momentum space between valence and conduction bands may be more effective. This could be more promising since the spatial separation of the layers provides a possibility of tuning the interband transition into resonance by an external electric field. An essential statement here is that this proposed phonon laser can operate only if the temperature is much lower than the energy gap in the semiconductor. During the analysis of this theoretical scheme several assumptions were introduced for simplicity reasons. The
Stimulated emission resulting from the distribution of velocities in a gas at a certain temperature. This has a Gaussian shape and reduces the peak strength of the line shape function. In a practical problem the full line shape function can be computed through a convolution of the individual line shape functions involved. Therefore, optical amplification will add power to an incident optical field at frequency formula_17 at a rate given by The stimulated emission cross section is where Stimulated emission can provide a physical mechanism for optical amplification. If an external source of energy stimulates more than 50% of the atoms in