Laser diffraction limit. All such devices are classified as "lasers" based on their method of producing light, i.e., stimulated emission. Lasers are employed where light of the required spatial or temporal coherence can not be produced using simpler technologies. The word "laser" started as an acronym for "light amplification by stimulated emission of radiation". In this usage, the term "light" includes electromagnetic radiation of any frequency, not only visible light, hence the terms "infrared laser", "ultraviolet laser", "X-ray laser" and "gamma-ray laser". Because the microwave predecessor of the laser, the maser, was developed first, devices of this sort operating at microwave
Sound amplification by stimulated emission of radiation of direct semiconductors. The reasoning behind that comes from the fact that, due to the k-selection rule in semiconductors, interband transitions with the production of only one phonon can be only those that produce an optical phonon. However, optical phonons have a short life-time (they split into two due to anharmonicity) and therefore they add some important complications. Here we can note that even in the case of multi-stage process of acoustic phonon creation it is possible to create SASER. Examples of narrow-gap indirect semiconductors that can be used are chalcogenides PbTe, PbSe and PbS with energy gap 0.15 –