Sound amplification by stimulated emission of radiation 0.3 eV. For the same scheme, the usage of a semiconductor heterostructure (layers of different semiconductors) with narrow gap indirect in momentum space between valence and conduction bands may be more effective. This could be more promising since the spatial separation of the layers provides a possibility of tuning the interband transition into resonance by an external electric field. An essential statement here is that this proposed phonon laser can operate only if the temperature is much lower than the energy gap in the semiconductor. During the analysis of this theoretical scheme several assumptions were introduced for simplicity reasons. The
Stimulated emission difference in energies between the two states as a photon. The photon will have frequency "ν" and energy "hν", given by: where "h" is Planck's constant. Alternatively, if the excited-state atom is perturbed by an electric field of frequency "ν", it may emit an additional photon of the same frequency and in phase, thus augmenting the external field, leaving the atom in the lower energy state. This process is known as stimulated emission. In a group of such atoms, if the number of atoms in the excited state is given by "N", the rate at which stimulated emission occurs is