Protocol relating to the status of refugees (1967) Protocol relating to the status of refugees (1967) The protocol relating to the status of refugees of 1967 broadens the definition of the Convention Relating to the Status of Refugees of 1951. The main point of the protocol was to "grant all refugees the same status irrespective of the effective date of the 1st of January 1951." The protocol was completed on the 31st of January 1967 in New York City. Switzerland ratified the protocol on the 20th of May 1968. Germany ratified it on the 5th of November, 1969, and Austria ratified it on the 5th of September 1973.
Silicon on sapphire Silicon on sapphire Silicon on sapphire (SOS) is a hetero-epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 µm) of silicon grown on a sapphire (AlO) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. Typically, high-purity artificially grown sapphire crystals are used. The silicon is usually deposited by the decomposition of silane gas (SiH) on heated sapphire substrates. The advantage of sapphire is that it is an excellent electrical insulator, preventing stray currents caused by radiation from spreading to nearby circuit elements. SOS faced early challenges in