Light-emitting diode of Cambridge, opt towards a multi-layer structure, in order to reduce (crystal) lattice mismatch and different thermal expansion ratios, in order to avoid cracking of the LED chip at high temperatures (e.g. during manufacturing), reduce heat generation and increase luminous efficiency. Epitaxy (or patterned sapphire) can be carried out with nanoimprint lithography. Even though white light can be created using individual red, green and blue LEDs, perhaps using a single SMD (Surface Mount Device) or through-hole RGB LED, this setup results in poor color rendering or CRI, due to the fact that virtually only 3 wavelengths of light are being
Light-emitting diode 1936, Georges Destriau observed that electroluminescence could be produced when zinc sulphide (ZnS) powder is suspended in an insulator and an alternating electrical field is applied to it. In his publications, Destriau often referred to luminescence as Losev-Light. Destriau worked in the laboratories of Madame Marie Curie, also an early pioneer in the field of luminescence with research on radium. Kurt Lehovec, Carl Accardo, and Edward Jamgochian explained these first light-emitting diodes in 1951 using an apparatus employing SiC crystals with a current source of battery or pulse generator and with a comparison to a variant, pure, crystal in 1953.