Light-emitting diode of Cambridge, opt towards a multi-layer structure, in order to reduce (crystal) lattice mismatch and different thermal expansion ratios, in order to avoid cracking of the LED chip at high temperatures (e.g. during manufacturing), reduce heat generation and increase luminous efficiency. Epitaxy (or patterned sapphire) can be carried out with nanoimprint lithography. Even though white light can be created using individual red, green and blue LEDs, perhaps using a single SMD (Surface Mount Device) or through-hole RGB LED, this setup results in poor color rendering or CRI, due to the fact that virtually only 3 wavelengths of light are being
Light-emitting diode developed a white LED with luminous efficacy of 150 lm/W at a forward current of 20 mA. Cree's XLamp XM-L LEDs, commercially available in 2011, produce 100 lm/W at their full power of 10 W, and up to 160 lm/W at around 2 W input power. In 2012, Cree announced a white LED giving 254 lm/W, and 303 lm/W in March 2014. Practical general lighting needs high-power LEDs, of one watt or more. Typical operating currents for such devices begin at 350 mA. These efficiencies are for the light-emitting diode only, held at low temperature in a lab. Since LEDs