Light-emitting diode phosphors provide more diffuse light, which is desirable for many applications. Remote phosphor designs are also more tolerant of variations in the LED emissions spectrum. A common yellow phosphor material is cerium-doped yttrium aluminium garnet (Ce:YAG). White LEDs can also be made by coating near-ultraviolet (NUV) LEDs with a mixture of high-efficiency europium-based phosphors that emit red and blue, plus copper and aluminium-doped zinc sulfide (ZnS:Cu, Al) that emits green. This is a method analogous to the way fluorescent lamps work. This method is less efficient than blue LEDs with YAG:Ce phosphor, as the Stokes shift is larger, so more
Light-emitting diode new style of wafers composed of gallium-nitride-on-silicon (GaN-on-Si) is being used to produce white LEDs using 200-mm silicon wafers. This avoids the typical costly sapphire substrate in relatively small 100- or 150-mm wafer sizes. The sapphire apparatus must be coupled with a mirror-like collector to reflect light that would otherwise be wasted. It is predicted that by 2020, 40% of all GaN LEDs will be made with GaN-on-Si. Manufacturing large sapphire material is difficult, while large silicon material is cheaper and more abundant. LED companies shifting from using sapphire to silicon should be a minimal investment. In an organic light-emitting