Light-emitting diode into a lower energy level and releases energy in the form of a photon. The wavelength of the light emitted, and thus its color, depends on the band gap energy of the materials forming the "p-n junction". In silicon or germanium diodes, the electrons and holes usually recombine by a "non-radiative transition", which produces no optical emission, because these are indirect band gap materials. The materials used for the LED have a direct band gap with energies corresponding to near-infrared, visible, or near-ultraviolet light. LED development began with infrared and red devices made with gallium arsenide. Advances in materials science
Light-emitting diode signal coupling between a GaAs p-n junction light emitter and an electrically isolated semiconductor photodetector. On August 8, 1962, Biard and Pittman filed a patent titled "Semiconductor Radiant Diode" based on their findings, which described a zinc-diffused p–n junction LED with a spaced cathode contact to allow for efficient emission of infrared light under forward bias. After establishing the priority of their work based on engineering notebooks predating submissions from G.E. Labs, RCA Research Labs, IBM Research Labs, Bell Labs, and Lincoln Lab at MIT, the U.S. patent office issued the two inventors the patent for the GaAs infrared (IR)