Light-emitting diode all the potential mechanisms that can induce failures in LEDs. The most common symptom of LED (and diode laser) failure is the gradual lowering of light output and loss of efficiency. Sudden failures, although rare, can also occur. Early red LEDs were notable for their short service life. With the development of high-power LEDs, the devices are subjected to higher junction temperatures and higher current densities than traditional devices. This causes stress on the material and may cause early light-output degradation. To quantify useful lifetime in a standardized manner, some suggest using L70 or L50, which are runtimes (typically in
Light-emitting diode signal coupling between a GaAs p-n junction light emitter and an electrically isolated semiconductor photodetector. On August 8, 1962, Biard and Pittman filed a patent titled "Semiconductor Radiant Diode" based on their findings, which described a zinc-diffused p–n junction LED with a spaced cathode contact to allow for efficient emission of infrared light under forward bias. After establishing the priority of their work based on engineering notebooks predating submissions from G.E. Labs, RCA Research Labs, IBM Research Labs, Bell Labs, and Lincoln Lab at MIT, the U.S. patent office issued the two inventors the patent for the GaAs infrared (IR)