Light-emitting diode of Cambridge, opt towards a multi-layer structure, in order to reduce (crystal) lattice mismatch and different thermal expansion ratios, in order to avoid cracking of the LED chip at high temperatures (e.g. during manufacturing), reduce heat generation and increase luminous efficiency. Epitaxy (or patterned sapphire) can be carried out with nanoimprint lithography. Even though white light can be created using individual red, green and blue LEDs, perhaps using a single SMD (Surface Mount Device) or through-hole RGB LED, this setup results in poor color rendering or CRI, due to the fact that virtually only 3 wavelengths of light are being
Light-emitting diode holes existing in the p-region. Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. Thus the energy level of the holes is lower than the energy levels of the electrons. Some portion of the energy must be dissipated to recombine the electrons and the holes. This energy is emitted in the form of heat and light. The electrons dissipate energy in the form of heat for silicon and germanium diodes, but in gallium arsenide phosphide (GaAsP) and gallium phosphide (GaP) semiconductors, the electrons dissipate energy by emitting photons. If the semiconductor