Diode diodes 0.25 to 0.3 V, and red or blue light-emitting diodes (LEDs) can have values of 1.4 V and 4.0 V respectively. At higher currents the forward voltage drop of the diode increases. A drop of 1 V to 1.5 V is typical at full rated current for power diodes. The "Shockley ideal diode equation" or the "diode law" (named after the bipolar junction transistor co-inventor William Bradford Shockley) gives the I–V characteristic of an ideal diode in either forward or reverse bias (or no bias). The following equation is called the "Shockley ideal diode equation" when "n", the ideality
Superluminescent diode Canada, which became a division of EG&G. Superluminescent light emitting diodes are also called sometimes superluminescent diodes, superluminescence diodes or superluminescent LEDs. A superluminescent light emitting diode is, similar to a laser diode, based on an electrically driven pn-junction that, when biased in forward direction, becomes optically active and generates amplified spontaneous emission over a wide range of wavelengths. The peak wavelength and the intensity of the SLED depend on the active material composition and on the injection current level. SLEDs are designed to have high single pass amplification for the spontaneous emission generated along the waveguide but, unlike laser