Diode diodes 0.25 to 0.3 V, and red or blue light-emitting diodes (LEDs) can have values of 1.4 V and 4.0 V respectively. At higher currents the forward voltage drop of the diode increases. A drop of 1 V to 1.5 V is typical at full rated current for power diodes. The "Shockley ideal diode equation" or the "diode law" (named after the bipolar junction transistor co-inventor William Bradford Shockley) gives the I–V characteristic of an ideal diode in either forward or reverse bias (or no bias). The following equation is called the "Shockley ideal diode equation" when "n", the ideality
Light-emitting diode holes existing in the p-region. Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. Thus the energy level of the holes is lower than the energy levels of the electrons. Some portion of the energy must be dissipated to recombine the electrons and the holes. This energy is emitted in the form of heat and light. The electrons dissipate energy in the form of heat for silicon and germanium diodes, but in gallium arsenide phosphide (GaAsP) and gallium phosphide (GaP) semiconductors, the electrons dissipate energy by emitting photons. If the semiconductor