Light-emitting diode light-emitting diode (U.S. Patent US3293513), the first practical LED. Immediately after filing the patent, Texas Instruments (TI) began a project to manufacture infrared diodes. In October 1962, TI announced the first commercial LED product (the SNX-100), which employed a pure GaAs crystal to emit a 890 nm light output. In October 1963, TI announced the first commercial hemispherical LED, the SNX-110. The first visible-spectrum (red) LED was developed in 1962 by Nick Holonyak, Jr. while working at General Electric. Holonyak first reported his LED in the journal "Applied Physics Letters" on December 1, 1962. M. George Craford, a former graduate
Light-emitting diode as the light-absorption efficiency of photovoltaic cells. The refractive index of silicon is set at 3.96 (at 590 nm), while air's refractive index is set at 1.0002926. In general, a flat-surface uncoated LED semiconductor chip emits light only perpendicular to the semiconductor's surface, and a few degrees to the side, in a cone shape referred to as the "light cone", "cone of light", or the "escape cone". The maximum angle of incidence is referred to as the critical angle. When the critical angle is exceeded, photons no longer escape the semiconductor but are, instead, reflected internally inside the semiconductor crystal