Light-emitting diode practical electronic components in 1962, the earliest LEDs emitted low-intensity infrared light. Infrared LEDs are still frequently used as transmitting elements in remote-control circuits, such as those in remote controls for a wide variety of consumer electronics. The first visible-light LEDs were of low intensity and limited to red. Modern LEDs are available across the visible, ultraviolet, and infrared wavelengths, with very high brightness. Early LEDs were often used as indicator lamps for electronic devices, replacing small incandescent bulbs. They were soon packaged into numeric readouts in the form of seven-segment displays and were commonly seen in digital clocks. Recent
Light-emitting diode new style of wafers composed of gallium-nitride-on-silicon (GaN-on-Si) is being used to produce white LEDs using 200-mm silicon wafers. This avoids the typical costly sapphire substrate in relatively small 100- or 150-mm wafer sizes. The sapphire apparatus must be coupled with a mirror-like collector to reflect light that would otherwise be wasted. It is predicted that by 2020, 40% of all GaN LEDs will be made with GaN-on-Si. Manufacturing large sapphire material is difficult, while large silicon material is cheaper and more abundant. LED companies shifting from using sapphire to silicon should be a minimal investment. In an organic light-emitting