Light-emitting diode light-emitting diode (U.S. Patent US3293513), the first practical LED. Immediately after filing the patent, Texas Instruments (TI) began a project to manufacture infrared diodes. In October 1962, TI announced the first commercial LED product (the SNX-100), which employed a pure GaAs crystal to emit a 890 nm light output. In October 1963, TI announced the first commercial hemispherical LED, the SNX-110. The first visible-spectrum (red) LED was developed in 1962 by Nick Holonyak, Jr. while working at General Electric. Holonyak first reported his LED in the journal "Applied Physics Letters" on December 1, 1962. M. George Craford, a former graduate
Light-emitting diode is less severe at elevated temperatures. The mechanism causing efficiency droop was identified in 2007 as Auger recombination, which was taken with mixed reaction. In 2013, a study confirmed Auger recombination as the cause of efficiency droop. In addition to being less efficient, operating LEDs at higher electric currents creates higher heat levels, which can compromise LED lifetime. Because of this increased heat at higher currents, high-brightness LEDs have an industry standard of operating at only 350 mA, which is a compromise between light output, efficiency, and longevity. Instead of increasing current levels, luminance is usually increased by combining multiple