Light-emitting diode into a lower energy level and releases energy in the form of a photon. The wavelength of the light emitted, and thus its color, depends on the band gap energy of the materials forming the "p-n junction". In silicon or germanium diodes, the electrons and holes usually recombine by a "non-radiative transition", which produces no optical emission, because these are indirect band gap materials. The materials used for the LED have a direct band gap with energies corresponding to near-infrared, visible, or near-ultraviolet light. LED development began with infrared and red devices made with gallium arsenide. Advances in materials science
Light-emitting diode quantum dot layer and recombine forming an exciton that excites a QD. This scheme is commonly studied for quantum dot display. The tunability of emission wavelengths and narrow bandwidth is also beneficial as excitation sources for fluorescence imaging. Fluorescence near-field scanning optical microscopy (NSOM) utilizing an integrated QD-LED has been demonstrated. In February 2008, a luminous efficacy of 300 lumens of visible light per watt of radiation (not per electrical watt) and warm-light emission was achieved by using nanocrystals. The main types of LEDs are miniature, high-power devices, and custom designs such as alphanumeric or multicolor. These are mostly single-die