Light-emitting diode light-emitting diode (U.S. Patent US3293513), the first practical LED. Immediately after filing the patent, Texas Instruments (TI) began a project to manufacture infrared diodes. In October 1962, TI announced the first commercial LED product (the SNX-100), which employed a pure GaAs crystal to emit a 890 nm light output. In October 1963, TI announced the first commercial hemispherical LED, the SNX-110. The first visible-spectrum (red) LED was developed in 1962 by Nick Holonyak, Jr. while working at General Electric. Holonyak first reported his LED in the journal "Applied Physics Letters" on December 1, 1962. M. George Craford, a former graduate
Laser diode frequency doubling of near-IR VECSEL emitters to produce blue and green light. External-cavity diode lasers are tunable lasers which use mainly double heterostructures diodes of the AlGaAs type. The first external-cavity diode lasers used intracavity etalons and simple tuning Littrow gratings. Other designs include gratings in grazing-incidence configuration and multiple-prism grating configurations. Laser diodes have the same reliability and failure issues as light emitting diodes. In addition they are subject to "catastrophic optical damage" (COD) when operated at higher power. Many of the advances in reliability of diode lasers in the last 20 years remain proprietary to their developers. The