Light-emitting diode light-emitting diode (U.S. Patent US3293513), the first practical LED. Immediately after filing the patent, Texas Instruments (TI) began a project to manufacture infrared diodes. In October 1962, TI announced the first commercial LED product (the SNX-100), which employed a pure GaAs crystal to emit a 890 nm light output. In October 1963, TI announced the first commercial hemispherical LED, the SNX-110. The first visible-spectrum (red) LED was developed in 1962 by Nick Holonyak, Jr. while working at General Electric. Holonyak first reported his LED in the journal "Applied Physics Letters" on December 1, 1962. M. George Craford, a former graduate
Light-emitting diode is translucent, the junction becomes the source of light as it is emitted, thus becoming a light-emitting diode. However, when the junction is reversely biased, the LED produces no light, and if the potential is great enough, the device is damaged. The LED consists of a chip of semiconducting material doped with impurities to create a "p-n junction". As in other diodes, current flows easily from the p-side, or anode, to the n-side, or cathode, but not in the reverse direction. Charge-carriers—electrons and holes—flow into the junction from electrodes with different voltages. When an electron meets a hole, it falls