Light-emitting diode light-emitting diode (U.S. Patent US3293513), the first practical LED. Immediately after filing the patent, Texas Instruments (TI) began a project to manufacture infrared diodes. In October 1962, TI announced the first commercial LED product (the SNX-100), which employed a pure GaAs crystal to emit a 890 nm light output. In October 1963, TI announced the first commercial hemispherical LED, the SNX-110. The first visible-spectrum (red) LED was developed in 1962 by Nick Holonyak, Jr. while working at General Electric. Holonyak first reported his LED in the journal "Applied Physics Letters" on December 1, 1962. M. George Craford, a former graduate
Vertical-external-cavity surface-emitting-laser the short propagation distance is that it causes the effect of "antiguiding" nonlinearities (the same phenomenon is coincidentally quantified by the linewidth enhancement factor relating to Mooradian's above-mentioned earlier work) in the diode laser gain region to be minimized. The result is a large-cross-section single-mode optical beam which is not attainable from in-plane (a.k.a. "edge-emitting") diode lasers. In a VECSEL, the external mirror permits a significantly greater area of the diode to participate in generating light in a single mode, resulting in much higher power than otherwise attainable. Monolithic VCSELs emit powers in the low milliwatt range. By contrast, at