Light-emitting diode phosphors provide more diffuse light, which is desirable for many applications. Remote phosphor designs are also more tolerant of variations in the LED emissions spectrum. A common yellow phosphor material is cerium-doped yttrium aluminium garnet (Ce:YAG). White LEDs can also be made by coating near-ultraviolet (NUV) LEDs with a mixture of high-efficiency europium-based phosphors that emit red and blue, plus copper and aluminium-doped zinc sulfide (ZnS:Cu, Al) that emits green. This is a method analogous to the way fluorescent lamps work. This method is less efficient than blue LEDs with YAG:Ce phosphor, as the Stokes shift is larger, so more
Light-emitting transistor made of indium gallium phosphide, indium gallium arsenide, and gallium arsenide, and emitted infrared photons from the base layer. Light-emitting transistor A light-emitting transistor or LET is a form of transistor that emits light. Higher efficiency than light-emitting diode (LED) is possible. Reported in the January 5, 2004 issue of the journal Applied Physics Letters, Milton Feng and Nick Holonyak, the inventor of the first practical light-emitting diode (LED) and the first semiconductor laser to operate in the visible spectrum, made the world's first light-emitting transistor. This hybrid device, fabricated by Feng's graduate student Walid Hafez, had one electrical input