Light-emitting diode phosphors provide more diffuse light, which is desirable for many applications. Remote phosphor designs are also more tolerant of variations in the LED emissions spectrum. A common yellow phosphor material is cerium-doped yttrium aluminium garnet (Ce:YAG). White LEDs can also be made by coating near-ultraviolet (NUV) LEDs with a mixture of high-efficiency europium-based phosphors that emit red and blue, plus copper and aluminium-doped zinc sulfide (ZnS:Cu, Al) that emits green. This is a method analogous to the way fluorescent lamps work. This method is less efficient than blue LEDs with YAG:Ce phosphor, as the Stokes shift is larger, so more
Light-emitting diode signal coupling between a GaAs p-n junction light emitter and an electrically isolated semiconductor photodetector. On August 8, 1962, Biard and Pittman filed a patent titled "Semiconductor Radiant Diode" based on their findings, which described a zinc-diffused p–n junction LED with a spaced cathode contact to allow for efficient emission of infrared light under forward bias. After establishing the priority of their work based on engineering notebooks predating submissions from G.E. Labs, RCA Research Labs, IBM Research Labs, Bell Labs, and Lincoln Lab at MIT, the U.S. patent office issued the two inventors the patent for the GaAs infrared (IR)