Light-emitting diode of Cambridge, opt towards a multi-layer structure, in order to reduce (crystal) lattice mismatch and different thermal expansion ratios, in order to avoid cracking of the LED chip at high temperatures (e.g. during manufacturing), reduce heat generation and increase luminous efficiency. Epitaxy (or patterned sapphire) can be carried out with nanoimprint lithography. Even though white light can be created using individual red, green and blue LEDs, perhaps using a single SMD (Surface Mount Device) or through-hole RGB LED, this setup results in poor color rendering or CRI, due to the fact that virtually only 3 wavelengths of light are being
Light-emitting diode is less severe at elevated temperatures. The mechanism causing efficiency droop was identified in 2007 as Auger recombination, which was taken with mixed reaction. In 2013, a study confirmed Auger recombination as the cause of efficiency droop. In addition to being less efficient, operating LEDs at higher electric currents creates higher heat levels, which can compromise LED lifetime. Because of this increased heat at higher currents, high-brightness LEDs have an industry standard of operating at only 350 mA, which is a compromise between light output, efficiency, and longevity. Instead of increasing current levels, luminance is usually increased by combining multiple