Light-emitting diode into a lower energy level and releases energy in the form of a photon. The wavelength of the light emitted, and thus its color, depends on the band gap energy of the materials forming the "p-n junction". In silicon or germanium diodes, the electrons and holes usually recombine by a "non-radiative transition", which produces no optical emission, because these are indirect band gap materials. The materials used for the LED have a direct band gap with energies corresponding to near-infrared, visible, or near-ultraviolet light. LED development began with infrared and red devices made with gallium arsenide. Advances in materials science
Light-emitting diode lm/W, released in 2010. LEDs developed by Seoul Semiconductor can operate on AC power without a DC converter. For each half-cycle, part of the LED emits light and part is dark, and this is reversed during the next half-cycle. The efficacy of this type of HP-LED is typically 40 lm/W. A large number of LED elements in series may be able to operate directly from line voltage. In 2009, Seoul Semiconductor released a high DC voltage LED, named as 'Acrich MJT', capable of being driven from AC power with a simple controlling circuit. The low-power dissipation of these LEDs affords