Dihydrogen monoxide parody oxygen atom. Literally, the term "dihydrogen monoxide" means "two hydrogen, one oxygen", consistent with its molecular formula: the prefix "" in "dihydrogen" means "two", the prefix "" in "monoxide" means "one", and an oxide is an oxygen atom attached to another atom in an ionic compound. Using chemical nomenclature, various names for water are in common use within the scientific community. Some such names include "hydrogen oxide", as well as an alkali name of "hydrogen hydroxide", and several acid names such as "hydric acid", "hydroxic acid", "hydroxyl acid", and "hydroxilic acid". The term "hydroxyl acid" used in the original text
Gate oxide model the transistor as fringing electric fields can exert an influence on conductors that are not immediately below the gate. The electrical properties of the gate oxide are critical to the formation of the conductive channel region below the gate. In NMOS-type devices, the zone beneath the gate oxide is a thin n-type inversion layer on the surface of the p-type semiconductor substrate. It is induced by the oxide electric field from the applied gate voltage V. This is known as the inversion channel. It is the conduction channel that allows the electrons to flow from the source to the