Amine oxide Amine oxide An amine oxide, also known as amine-"N"-oxide and "N"-oxide, is a chemical compound that contains the functional group RN−O, an N−O coordinate covalent bond with three additional hydrogen and/or hydrocarbon side chains attached to N. Sometimes it is written as RN→O or, wrongly, as RN=O. In the strict sense, the term "amine oxide" applies only to oxides of tertiary amines. Sometimes it is also used for the analogous derivatives of primary and secondary amines. Examples of amine oxides include pyridine-"N"-oxide, a water-soluble crystalline solid with melting point 62–67 °C, and "N"-methylmorpholine "N"-oxide, which is an oxidant. Amine oxides
Equivalent oxide thickness oxide dielectric, as: Equivalent oxide thickness An Equivalent oxide thickness is a distance, usually given in nanometers (nm), which indicates how thick a silicon oxide film would need to be to produce the same effect as the high-κ material being used. The term is often used when describing field effect transistors which rely on an electrically insulating pad of material between a gate and a doped semiconducting region. Device performance has typically been improved by reducing the thickness of a silicon oxide insulating pad. As the thickness approached 5–10 nm, leakage became a problem and alternate materials were necessary to