Amine oxide Amine oxide An amine oxide, also known as amine-"N"-oxide and "N"-oxide, is a chemical compound that contains the functional group RN−O, an N−O coordinate covalent bond with three additional hydrogen and/or hydrocarbon side chains attached to N. Sometimes it is written as RN→O or, wrongly, as RN=O. In the strict sense, the term "amine oxide" applies only to oxides of tertiary amines. Sometimes it is also used for the analogous derivatives of primary and secondary amines. Examples of amine oxides include pyridine-"N"-oxide, a water-soluble crystalline solid with melting point 62–67 °C, and "N"-methylmorpholine "N"-oxide, which is an oxidant. Amine oxides
Gate oxide model the transistor as fringing electric fields can exert an influence on conductors that are not immediately below the gate. The electrical properties of the gate oxide are critical to the formation of the conductive channel region below the gate. In NMOS-type devices, the zone beneath the gate oxide is a thin n-type inversion layer on the surface of the p-type semiconductor substrate. It is induced by the oxide electric field from the applied gate voltage V. This is known as the inversion channel. It is the conduction channel that allows the electrons to flow from the source to the