Walter Houser Brattain Walter Houser Brattain Walter Houser Brattain (; February 10, 1902 – October 13, 1987) was an American physicist at Bell Labs who, along with fellow scientists John Bardeen and William Shockley, invented the point-contact transistor in December 1947. They shared the 1956 Nobel Prize in Physics for their invention. Brattain devoted much of his life to research on surface states. Walter Brattain was born in Xiamen, Fujian, China, to American parents Ross R. Brattain and Ottilie Houser Brattain. Ross R. Brattain was a teacher at the Ting-Wen Institute, a private school for Chinese boys. Both parents were graduates of Whitman
Invention of the integrated circuit of Hoerni, pointed Hoerni and Noyce to an error in the conclusions of Frosch. Frosch used a thin oxide layer, whereas the experiments of 1957–1958 showed that a thick layer of oxide can stop the phosphorus diffusion. Armed with this knowledge, by March 12, 1959 Hoerni made the first prototype of a planar transistor, and on May 1, 1959 filed a patent application for the invention of the planar process. In April 1960, Fairchild launched the planar transistor 2N1613, and by October 1960 completely abandoned the mesa transistor technology. By the mid-1960s, the planar process has become the main technology