History of the transistor about 15 volts". Brattain and H. R. Moore made a demonstration to several of their colleagues and managers at Bell Labs on the afternoon of 23 December 1947, often given as the birth date of the transistor. The "PNP point-contact germanium transistor" operated as a speech amplifier with a power gain of 18 in that trial. In 1956 John Bardeen, Walter Houser Brattain, and William Bradford Shockley were honored with the Nobel Prize in Physics "for their researches on semiconductors and their discovery of the transistor effect". Twelve people are mentioned as directly involved in the invention of the transistor
Invention of the integrated circuit of Hoerni, pointed Hoerni and Noyce to an error in the conclusions of Frosch. Frosch used a thin oxide layer, whereas the experiments of 1957–1958 showed that a thick layer of oxide can stop the phosphorus diffusion. Armed with this knowledge, by March 12, 1959 Hoerni made the first prototype of a planar transistor, and on May 1, 1959 filed a patent application for the invention of the planar process. In April 1960, Fairchild launched the planar transistor 2N1613, and by October 1960 completely abandoned the mesa transistor technology. By the mid-1960s, the planar process has become the main technology