Walter Houser Brattain Walter Houser Brattain Walter Houser Brattain (; February 10, 1902 – October 13, 1987) was an American physicist at Bell Labs who, along with fellow scientists John Bardeen and William Shockley, invented the point-contact transistor in December 1947. They shared the 1956 Nobel Prize in Physics for their invention. Brattain devoted much of his life to research on surface states. Walter Brattain was born in Xiamen, Fujian, China, to American parents Ross R. Brattain and Ottilie Houser Brattain. Ross R. Brattain was a teacher at the Ting-Wen Institute, a private school for Chinese boys. Both parents were graduates of Whitman
History of the transistor Bell Laboratories were the first to develop a working silicon transistor on January 26, 1954. A few months later, Gordon Teal, working independently at Texas Instruments, developed a similar device. Both of these devices were made by controlling the doping of single silicon crystals while they were grown from molten silicon. A far superior method was developed by Morris Tanenbaum and Calvin S. Fuller at Bell Laboratories in early 1955 by the gaseous diffusion of donor and acceptor impurities into single crystal silicon chips. Many developments from 55 to 66. The first gallium-arsenide Schottky-gate field-effect transistor (MESFET) was made by