Transistor and is ubiquitous in modern electronic systems. Julius Edgar Lilienfeld patented a field-effect transistor in 1926 but it was not possible to actually construct a working device at that time. The first practically implemented device was a point-contact transistor invented in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley. The transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and Bardeen, Brattain, and Shockley shared the 1956 Nobel Prize in Physics for their achievement.
History of the transistor and Y. Watanabe in 1950, and was finally able to produce some experimental prototypes in 1975. It was the fastest transistor through to the 1980s. Further developments included the grown-junction transistor (1951), the surface-barrier transistor (1953), the diffusion transistor, the tetrode transistor, and the pentode transistor. The diffused silicon 'mesa transistor' was developed at Bell in 1955 and made commercially available by Fairchild Semiconductor in 1958. The spacistor was a type of transistor developed in the 1950s as an improvement over the point-contact transistor and the later alloy junction transistor. In 1953, Philco had developed the world's first high frequency