History of the transistor about 15 volts". Brattain and H. R. Moore made a demonstration to several of their colleagues and managers at Bell Labs on the afternoon of 23 December 1947, often given as the birth date of the transistor. The "PNP point-contact germanium transistor" operated as a speech amplifier with a power gain of 18 in that trial. In 1956 John Bardeen, Walter Houser Brattain, and William Bradford Shockley were honored with the Nobel Prize in Physics "for their researches on semiconductors and their discovery of the transistor effect". Twelve people are mentioned as directly involved in the invention of the transistor
History of the transistor thought it best that his name be left off the patent application. Shockley was incensed, and decided to demonstrate who was the real brains of the operation. Only a few months later he invented an entirely new type of transistor with a layer or "sandwich" structure. This new form was considerably more robust than the fragile point-contact system, and would go on to be used for the vast majority of all transistors into the 1960s. It would evolve into the bipolar junction transistor. The static induction transistor, the first high frequency transistor concept, was invented by Japanese engineers Jun-ichi Nishizawa