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â¢ It has taken ~10 years to bring â3 â Dâ transistors into volume production. â¢ Multi â gate MOSFETs provide a pathway to achieving lower power and/or improved performance. â¢ Further evolution of the MOSFET to a stacked â channel structure may occur by the end of the roadmap.ooking to the Futureâ¦ 2010 International Technology Roadmap for Semiconductors (ITRS) 2012 2014 2016 2018 2020 2022 2024Gate Length 24 nm 18 nm 15 nm 13 nm 11 nm 10 nm 7 nmGate Oxide Thickness, T OX (nm)Drive Current, I DSAT End of Roadmap(always ~15 yrs away!) 46. FinFET vs. UTBB SOI MOSFET K. Cheng et al.
The MOSFET needs to have a maximum drain to source rating of 50V (I'd say at least 60V to be on the safe side) and be able to pass the current required by the load with a gate voltage of 3.3V. If the circuit is correctly designed, the maximum gate voltage of 20V is not a problem.