Correlation between defects and luminescence property from electroluminescent (EL) device composed of nanocrystalline silicon (nc-Si) prepared by wet and dry processes such as hydrofluoric (HF) acid solution treatment and annealing have investigated using electron spin resonance and EL measurements. The EL device using HF-treated nc-Si emitted strong red light, because of existence of only P'ce-centers (radiative recombination centers) on the surface vicinity. On the other hand, the EL device using annealed nc-Si above 400 degrees C exhibited green luminescence by the reduction of particle size due to surface oxidation. When the annealing temperature was risen from 400 degrees C up to 600 degrees C, the green luminescence strengthened with increasing the P'ce-centers. These results indicate that the formation of many radiative recombination centers onto the nc-Si surface vicinity lead to the enhancement of green luminescence from the nc-Si based EL device.
Color Electrochemistry