of the acceptor bound hole was detected through photoluminescence spectra. The thickness of the cap layer was varied up to 30 nm which should rule out any proximity effect due to the overlap of the carrier wavefunction with the magnetic layer. It was suggested that elliptically polarized phonons are responsible for angular momentum transfer between the Co layer and the semiconductor leading to polarization of hole spins due to strong SO interaction in the valence band. Polarized phonons couple to transitions between split heavy-hole and light-hole states. This effect is absent in the case of electron gas because the SO interaction is much weaker in the conduction band. The long-range p-d exchange constant was directly measured by spin-flip Raman scattering [@Akimov2017] and its value was found to be $50-100~\mu eV$. Application of electric field across such a ferromagnet-semiconductor hybrid structure changes the splitting of the heavy-hole and light-hole states thus affecting phonon coupling. It was shown [@Korenev2018] that electric field strengths of the order of $10^4~V/cm$ are sufficient to bring heavy-to-light hole transition out of resonance with the magnon-phonon resonance of the ferromagnet. Therefore, low voltage electric control of the conceptually new long-range exchange coupling mediated by elliptically polarized phonons 