simulated with the proposed MTJ STO model.

According to the simulation results, this RC bias-T can more successfully be utilized by MTJ STOs since the performance of the bias-T is not influenced by the variable resistance (biasing voltage) of MTJ STO. Consequently, the RC bias-T is used in this work to build the system. The selection of the biasing circuits for the MTJ STO demonstrates that the proposed MTJ STO model is very useful for the device and circuit community to identify the suitable circuit topologies and to design dedicated circuits for MTJ STOs, owing to the complete implementation of the proposed model in Verilog-A.

To complete a system, which provides low-noise amplification to MTJ STO signals and can be used in either applications or measurements, a wideband Balun-low noise amplifier (LNA) [@Tingsu2014] is employed. An output buffer and an AC coupling capacitor are added to present a system (Fig. 5) that is able to drive 50 $\Omega$ load. The buffered wideband Balun-LNA is fully-ESD protected, and it is implemented in CMOS 65 nm process with a 1.2 V power supply.

Before performing the transient simulation of the system, the unloaded MTJ STO is simulated at and $\phi_\text{ext}=40^o$, where a 