\[sec:form\], we derive analytical expressions for the localization length in the weak and strong disorder regimes. In Sec. \[sec:res\], we present detailed numerical results obtained using the IIM and discuss the dependencies of the localization length on incident angle, disorder strength and particle energy. We conclude the paper in Sec. \[sec:conc\] with some remarks on the implications of our results for experiments.

Model {#sec:model}
=====

We are interested in the localization of massless Dirac electrons in 2D systems such as monolayer graphene in the presence of 1D random scalar and vector potentials. Our theory can also be applied to the localization of electromagnetic waves in graphene-like photonic systems. The graphene layer is in the $xy$ plane and the scalar potential $U$ and the vector potential $\bf A$ ($=A_y{\hat {\bf y}}$) are assumed to be functions of $x$ only. The scalar potential can be generated by various methods including the electric field effect and chemical doping. The vector potential is related to an external magnetic field perpendicular to the graphene plane, ${\bf B}=B_0{\hat {\bf z}}$, by $B_0(x)=dA_y(x)/dx$. It can also be induced by physical strain.

The motion of electrons in our system is described by the 2D Dirac Hamiltonian of the 