(\[1-exp(-$\delta$)\]$\times$100) is found to be 9.5 $\%$. It means the disorder at the interfaces is very small since spin depolarization is mainly caused by disorder at the interfaces. The interfacial spin resistance *$r_{sI}$* is given by *$r_b$* / $\delta$ , where *$r_b$* is the interface resistance. It indicates that most of spin current will flow through interface compared to bulk SOC of Pt if SML probability is large. However, in our case SML probability is very small (9.5$\%$), it means that most of the spin current is dissipating through bulk SOC of Pt, which produces charge current and hence to create *$V_{ISHE}$*. Further, we compared the *$g_{r}^{\uparrow \downarrow}$* and *$g_{eff}^{\uparrow \downarrow}$* values evaluated in this work to the literature of various FM/HM systems in table III.

[cccc]{}

  -----------
     Layer
   structure
  -----------

  : The values of the spin diffusion length ($\lambda_{Pt}$), spin mixing conductance ($g_{r}^{\uparrow \downarrow}$), effective mixing conductance ($g_{eff}^{\uparrow \downarrow}$) from the literature and in this work.

& $\lambda_{Pt}$(nm) & $g_{r}^{\uparrow \downarrow}$($m^{-2}$) & $g_{eff}^{\uparrow \downarrow}$($m^{-2}$)\

  --------------------------
   $NiFe/Pt$ [\[]{}47[\]]{}
  --------------------------

  : The values of the spin diffusion length ($\lambda_{Pt}$), spin mixing conductance ($g_{r}^{\uparrow \downarrow}$), effective mixing conductance ($g_{eff}^{\uparrow \downarrow}$) from the literature and in this work.

& 7.7 & 1.13$\times 10^{20}$ 