and 4 also show the plot of *$V_{sym}$* (dashed line) and *$V_{asym}$* (dotted line) separately for the samples S1, and S5, respectively.

![Angle dependent ($\phi$) $V_{sym}$ and $V_{asym}$ measurements for samples S1 (a and b) and S5 (c and d), respectively.[]{data-label="fig5"}](fig5.png){width="50.00000%"}

In-plane angle dependent measurements of *$V_{meas}$* were performed at the interval of 2*$^{\circ}$* to quantify spin pumping and other spin rectification contributions (Fig. \[fig5\]). It is a well-established method to decouple the individual components from the measured voltage \[30,36,37\]. The model given by Harder *et.al.* \[38\] has considered the rectification effects i.e., parallel AMR (*$V_{asym/sym}^{AMR ||}$*) and perpendicular AMR (*$V_{asym/sym}^{AMR \perp}$*) to the applied *rf* field and the AHE contribution due to the FM layer. The relation between the measured voltage and those rectification effects are as follows \[36\]:

$$\label{q8}
\begin{aligned}
 V_{asym}= V_{AHE}cos(\phi + \phi_0) sin (\it{\Phi})+ 
    \\V_{asym}^{AMR \perp} cos 2(\phi + \phi_0)sin(\it{\Phi})+ 
   \\ V_{asym}^{AMR ||}sin2(\phi + \phi_0)cos(\phi+\phi_0)
   \end{aligned}$$

$$\label{q9}
\begin{aligned}
    V_{sym}= V_{sp}cos^3(\phi + \phi_0)+V_{AHE}cos(\phi + \phi_0)cos(\it{\Phi)}\\
    + V_{sym}^{AMR \perp} cos 2(\phi + \phi_0)cos(\phi+ \phi_0)\\
    + V_{sym}^{AMR ||}sin2(\phi + \phi_0)cos(\phi+\phi_0)
    \end{aligned}$$

*$V_{AHE}$* and *$V_{sp}$* correspond to the AHE voltage and the spin pumping contributions, respectively. $\phi$ is the angle between applied *H* and the *rf* magnetic field which is 