temperatures [@Nimtz1983]), hence the Coulomb potential from defects and impurities is efficiently screened. For this reason doping within QW hardly affects the mobility, thus making remote doping unnecessary. The high mobility makes PbTe QWs perfect to study quasiballistic transport phenomena [@Grabecki2002; @Grabecki2005; @Grabecki2007]. Already the first PbTe/PbEuTe QWs were of good enough quality to allow for the observation of SdH oscillations and signatures of QHE [@Olver1994]. Nevertheless, studies of QWs based on these materials remain rather scarce.

It is known that doping of QWs induces a certain disorder which affects the transport properties of 2DEG. This disorder is partially responsible for the persistent photoconductivity (PPC) effect which is observed after illumination of a semiconductor at low temperature. QWs based on II-VI semiconductors exhibit similar effects [@Ray1999; @Kazakov2017]. In the work of Ray [*et. al.*]{} [@Ray1999] PPC in magnetically doped ZnSe QW was interpreted as due to the formation of DX centers at Mn sites. However, it is known that [*n*]{}-type dopants also create DX centers in CdTe, CdMnTe, and CdMgTe [@Iseler1972; @Wojtowicz1993; @Wojtowicz1994; @Semaltianos1993; @Wasik1999; @Wasik1996]. Temperature dependent PPC was also observed in PbTe/PbEuTe QWs with contributions from both barriers and QW [@Pena2017]. At high temperatures transport via barriers was 