and phase difference across the structure, $\chi ,$ have been calculated for the phase difference $\varphi = \pi /2$. These curves are shown in the panels b)-f) of the Fig.\[Del\_ArbT\] as the upper and bottom plots, respectively. There is direct correspondence between the letters, b, c, d, e, f, on $J_{C}(d_{F})$ curves and the labels, b), c), d), e), f), of the panels.

It is seen that qualitative behavior of the $J_{C}(d_{F})$ dependence at $T=0.5T_{C}$ remains similar to that obtained in the frame of the GL equations for $T=0.9T_{C}$ (see Fig.\[CPR\]a). Furthermore, the modes of operation discussed above remain relevant too. The panels b)-f) in Fig.\[Del\_ArbT\] make this statement more clear.

At the point marked by letter ’b’, the s-film is sufficiently thick, $d_{s}=5\xi
_{S},$ while F film is rather thin, $d_{F}=0.3\xi _{F},$ and therefore the structure is in $0$- state of the *mode (1a)*. In this regime the phase mainly drops across the tunnel barrier, while the phase shifts at the s-film and in the S electrodes are negligibly small(see the bottom plot in Fig.\[Del\_ArbT\]b).

At the point marked by the letter ’c’ $(d_{s}=5\xi _{S},$ $d_{F}=\xi _{F})$, the structure is in the $\pi $- state of the *mode (1a)*. 