framework the PAM provides a more detailed description of the electronic configuration of correlated materials with respect to the Hubbard model, by taking into account the effects of the inclusion of non-correlated bands. We solved the PAM using dynamical mean-field theory (DMFT),[@rmp] one of the most powerful and reliable tools to study correlated materials.

Following previous studies[@sordi07; @amaricci08; @sordi09] we investigate the model around the Mott insulating state which takes place for large interactions and [*odd*]{} integer total occupation. The doping-driven transition has been thoroughly investigated in Ref. , and a NFL behavior in the hole-doped side has been demonstrated in Ref. . Here we extend this work by analyzing the coherence-incoherence crossover which leads to the NFL behavior and its dependence on doping. We will therefore focus on the scattering properties of the system and we will detail their relation with the magnetic degrees of freedom. Finally we establish a connection between the finite-temperature breakdown of the FL and the competition between anti-ferromagnetic and ferromagnetic short-ranged correlations.

The manuscript is structured as follows. In we introduce the PAM and the related DMFT equations. In section we briefly discuss the doping-driven Mott transition in the PAM. In we present the 