the main conclusions of this work.

![(a) Sample layout: Indirect excitons (IXs) photoexcited in the GaAs/(Al,Ga)As DQW are transported by a surface acoustic wave (SAW) launched by applying an electric power P$_{RF}$ to an interdigital transducer (IDT) placed on a piezoelectric ZnO island. The SAW amplitude is stated in terms of the nominal RF power P$_{RF}$ applied to the IDT. The IX lifetime and energy are controlled by the bias voltage ${V_\mathrm{BIAS}}$ applied between the semitransparent top electrode (STE) and the doped substrate. The superimposed PL images compare the emission in the absence and presence of a SAW. Inset: Energy band diagram of a DQW along the growth (z) direction showing the direct (DX) and indirect (IX) exciton transitions. (b) IX transport by the moving strain modulation of the conduction (CB) and valence band (VB) in a DQW. E$_{g,min}$ (E$_{g,max}$) denotes minimum (maximum) bandgaps induced by SAW strain field along the x=\[100\] direction. (c) Spectral PL image of the transport channel at T=4.5 K. The superimposed spectrum was recorded at the STE edge. (d) Time-resolved PL trace recorded at T=3.8 K at the edge of the STE.[]{data-label="Fig1"}](Figure_1.png){width="\columnwidth"}

Experimental Details {#Experimental_Details}
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The experiments were carried out on an (Al,Ga)As field-effect 