HgTe, offer 2DEG with a giant spin-orbit splitting [@Gui2004b] and the possibility to study a 2D system, where both electrons and holes coexist [@Kvon2008].

2DEGs in DMS-based QWs have been the subject of intensive research in terms of possible applications in spintronic devices [@Gruber2001; @Slobodskyy2003; @Betthausen2012]. Different devices implementing giant spin splitting have been proposed, e.g., spin aligners and injectors. Among the proposed spin injectors is a device based on a resonant tunneling diode (RTD) [@Gruber2001; @Slobodskyy2003], consisting of a (Zn,Mn)Se DMS QW sandwiched between thin, non-magnetic $\text{Zn}_{1-x}\text{Be}_x\text{Se}$ barriers, which were separating QW from ZnSe epilayers. In such a device one can selectively bring the spin-up or spin-down states into resonance thus increasing the transmission probability of electrons with selected spin alignment.

In recent years there is renewed interest in 2DEG in chalcogenides due to the prediction of various topological phases in such compounds. The quantum spin Hall effect (QSHE), which is a hallmark of topological insulator (TI) phase, was realized in HgTe QWs [@Koenig2007]. Ferromagnetism introduced into a suitable TI can break time-reversal symmetry and lead to the quantum anomalous Hall effect (QAHE). It also was experimentally realized in 2D systems based on chalcogenides, namely in $\text{Cr}_{0.15}(\text{Bi}_{0.1}\text{Sb}_{0.9})_{1.85}\text{Te}_3$ [@Chang2013] and 