material SM accompanying the manuscript. The numerical analysis of the IX transport across the EXAT described in the SM show that the effect of the source, gate and drain edges on the exciton flow are negligible when the EXAT is in the ON state. The good agreement between the experiment and modeling confirms that the device functions are well-predicted by our model of IX fluid dynamics in mobile potentials.

The electrically controlled separation between the input and output ports (i.e., S and D electrodes) in the EXAT allows us to prove that the acoustic field really transports both exciton constituents (i.e., both electrons and holes) along the DQW structure. This question is relevant since the remote PL in IX transport experiments under a single STE can also be induced by the recombination of one type of carrier transported along the semiconductor channel with carriers of opposite polarity injected from the contacts (as for the IX bright spots reported in [@Ref8]). In order to address this issue, we have determined the absolute sensitivity of the setup, which is defined as the photon flux required for a given count rate measured on the CCD camera detecting the PL. The sensitivity calibration was 