plots the T dependence of $R_s$ measured in a four-probe configuration, for different $V_{LG}$ and induced carrier density $n_{2d}$. Our devices behave similarly to Ref., undergoing first an insulator-to-metal transition near $R_s\sim h/e^2$ at low $n_{2d}<1\cdot 10^{13}$cm$^{-2}$, followed by a metal-to-superconductor transition at high $n_{2d}>6\cdot 10^{13}$cm$^{-2}$. The saturating behavior in the $R_s$ vs T curves in Fig.\[figure:transport\]a for $\mathrm{T}\lesssim50$K, close to the insulator-to-metal transition, is typically observed in systems at low $n_{2d}$ characterized by a fluctuating electrostatic potential, such as that due to charged impurities[@ZabrodskiiJETP1984]. This applies to ion-gated crystalline systems at low $V_{LG}$, since the doping is provided by a low density of ions in close proximity to the active channel. These ions induce a perturbation of the local electrostatic potential, locally inducing charge carriers, but are otherwise far apart. The resulting potential landscape is thus inhomogeneous. This low-doping ($\lesssim1\times10^{13}$cm$^{-2}$) density inhomogeneity is a known issue in ion-gated crystalline systems, but becomes less and less relevant at higher ionic densities[@RenNanoLett2015]. We employ Hall effect measurements to determine $n_{2d}$ as a function of $V_{LG}$ (see Fig.\[figure:transport\]b), and, consequently, the liquid gate capacitance $C_{LG}$. $C_{LG}$ for the BMPPD-TFSI/MoS$_2$ interface ($\sim3.4\pm0.6\mu$F/cm$^{2}$) is of the same order of magnitude as for DEME-TFSI/MoS$_2$ in 