for $H=10\pi T_{C},$ $\gamma _{B}=0,$ $\Gamma _{BI}\approx 200$ and $\Gamma \approx 5$ for two thickness of the s layer $d_{s}=5\xi _{S}(T)$ (solid line) and $d_{s}=0.5\xi _{S}(T)$ (dashed line). In Figs.\[CPR\]b-d we enlarge the parts of $J_{C}(d_{F})$ dependence enclosed in rectangles labeled by letters b, c and d in Fig.\[CPR\]a and mark by digits the points where the $J_{S}(\varphi )$ curves have been calculated. These curves are marked by the same digits as the points in the enlarge parts of $J_{C}(d_{F})$ dependencies. The dashed lines in the Figs.\[CPR\]b-d are the loci of critical points at which the $J_{S}(\varphi )$ dependence reaches its maximum value, $J_{C}(d_{F})$.

Figure \[CPR\]b presents the *mode (1b)* valley, which divides the *mode (1a)* domain into $0$- and $\pi $- states regions. In the *mode (1a)* domain the SIsFS structure behaves as SIs and sFS junctions connected in series. Its critical current equals to the minimal one among the critical currents of the SIs $(J_{CSIs})$ and sFS $(J_{CsFS})$ parts of the device. In the considered case the thickness of the s film is sufficiently large to prevent suppression of superconductivity. Therefore, $J_{CSIs}$ does not change when moving from the point $1$ to the point $2$ along $J_{C}d_{F}$ dependence. 