7 energy levels and Lanczos calculations with 8 levels. The ED calculations have been cross-checked against Density Matrix Renormalization Group, which allows to substantially increase the number of bath levels. [@dmrgRMP; @karenPRB; @daniel1]

The hole-doped Mott insulator {#sec2}
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![(Color online) Evolution of the $f$- (solid line) and $p$-orbital (dashed line) projections of the DOS. Data from QMC calculations at $T=0.0125$, $\tpd=0.9$, $n_{tot}=3$, analytically continued on the real axis using Maximum Entropy Method [@mem]. The figure qualitatively illustrates the Mott metal-insulator transition driven by correlation in the PAM.[]{data-label="fig2.1"}](fig2.eps){width="45.00000%"}

The PAM has been largely investigated in proximity of the Kondo insulator regime.[@schwolff; @Fazekas; @doniach] The Kondo insulator is a band insulator realized at [*even*]{} integer total filling ($n_\mathrm{tot}=2$). In this regime the system has two hybridized bands with a central Kondo peak, corresponding to the resonant scattering of the conduction electrons on the localized moments and split by an indirect gap $\Delta_\mathrm{ind}$ (see ). Upon doping the Kondo resonance remains pinned at the chemical potential, and the system behaves like a heavy-fermion liquid.

In this work we focus on a different model regime, namely the correlated metal obtained by a state with [*odd*]{} total occupation ($n_\mathrm{tot}=1$ or $3$) and large enough 