The first is the so-called “disordered alloy”, in which the magnetic impurities are randomly distributed over the whole QW width. In the other approach [@Crooker1995; @Wojtowicz1995], called “digital alloy”, nonmagnetic layers (e.g., CdTe or ZnCdSe) are separated by atomically thin magnetic layers (e.g., CdMnTe or MnSe). Such a technique allows achieving higher local concentrations of magnetic ions without the transition to antiferromagnetic or spin glass phases [@Smorchkova1997]. It was also observed that in various versions of “digital alloy” and “disordered alloy” doping schemes, for the same number of incorporated paramagnetic spins (resulting in the same average concentration of Mn in the QW) the spin splitting of excitonic states is the same while the magnetization dynamics is different [@Kneip2006b]. The mobilities of the 2DEGs in digital alloy QWs were high enough to allow observation of Shubnikov-de Haas (SdH) oscillations in magnetoresistance (MR) and the quantum Hall effect (QHE).

Here it is worth to note some peculiarities of the band alignment in HgTe/HgCdTe QWs. Calculations performed with the eight-band ${\bf k}\cdot {\bf p}$ method [@Novik2005; @Becker2007] have shown that the positions of E1 and H1 bands — E and H label the electron and heavy hole subbands — strongly depend on the 