mechanisms, one is related to the superlinear growth of the integral (\[lin\]), and the second is related to the singularity of the correlation function $Z_4(x,y,z)$. For the correlation function $c(x)$ decaying more slowly than $\propto 1/x^{1/2}$ the first mechanism provides the development of the anomalous diffusion at arbitrary high temperature. Hence, in semiconductors having very slowly decaying spatial correlations the nondispersive regime is a very peculiar one because the anomalous diffusion occurs at any temperature. Related to the effect of the first mechanism is the invalidity of the modified Einstein relation for the particular case of the auxiliary correlation function $c(x)\propto 1/x^{1/2}$ for $x\rightarrow\infty$, though the normal diffusion still takes place in this case. The second mechanism could lead to the development of the the anomalous diffusion only for $T < 2\hskip2pt T_0$ but for more faster decaying correlation functions. Inequality $T_c < 2\hskip2pt T_0$ is the absolute global boundary for the second mechanism, while the transition temperature $T_c=U_0/\varkappa_c$ for the particular amorphous semiconductor is determined by the actual functional form of the correlation function $c(x)$. If the actual breakdown mechanism is the second one, then the dispersive regime develops in two stages: first, with the decrease of the temperature 