importance since it provides validation of the proposed model at system- and circuit-level throughout its range of operation. Furthermore, it can fully cross-verify the model and the designed CMOS circuits. To perform the hybrid simulation, a system including the proposed MTJ STO model as well as CMOS circuits is considered. In this system, the MTJ STO model employs the parameters from [@ref3] since this MTJ STO has a resistance close to 50 $\Omega$, which eases analyses. Firstly, proper biasing circuits for driving the MTJ STO are investigated and analyzed. For instance, the current mirror, which has been employed in [@MTJSTO_model1], [@MTJSTO_model2] to provide the current biasing for the MTJ STO, is simulated with the proposed MTJ STO model and examined. The simulation results, however, suggest that using the current mirror to bias the MTJ STO is not suitable. The reason is that the resistance (biasing voltage) of the MTJ STO changes when $\phi_\text{ext}$ is varied, as illustrated in Fig. 3. Therefore, different resistances at different $\phi_\text{ext}$ make it impossible for the current mirror to accurately copy the current from a current source to the MTJ STO under all circumstances. Thereafter, a traditional RC bias-T, as shown in Fig. 5, is 