& -3.586+-0.01 & $\hkl[11-2]$ & +2.7 & -3.281+-0.01 & $\hkl[1-10]$\
& & Theory& -3.4 & $\hkl[111]$ & +6 & -3.0 & $\hkl[11-2]$ & +2 & -2.7 & $\hkl[1-10]$\
$Q$ ($^{14}\mathrm{N}$) & & Exp. & -2.078+-0.01 & $\hkl[111]$ & 0 & +1.039+-0.01 & $\hkl[11-2]$ & 0 & +1.039+-0.01 & $\hkl[1-10]$\
& & Exp. & 98.24+-0.5 & $\hkl[22-1]$ & 0 & 98.13+-0.5 & $\hkl[114]$ & 0 & 94.47+-0.5 & $\hkl[1-10]$\
& & Theory& +87 & $\hkl[22-1]$ & 8 & +89 & $\hkl[114]$ & 8 & +92 & $\hkl[1-10]$\

DFT calculations of the stability of different charge states of [$\mathrm{SiV}$]{}and [$\mathrm{SiVN}$]{}are consistent with the observed charge state behavior: the neutral charge states of both defects are stable at approximately the same chemical potential, while [$\mathrm{SiVN}^-$]{}is the stable charge state over almost all other chemical potentials \[Fig \[fig:orbitals\](b)\]. These calculations also predict that a double negatively charged [$\mathrm{SiVN}$]{} state can exist for high chemical potentials: this charge state would have one hole ($S=1/2$) and is able to form due to a disruption to the atomic configuration. Structurally, [$\mathrm{SiVN}$]{} can be compared to a [$\mathrm{SiV}$]{}system with a nitrogen donor and therefore [$\mathrm{SiVN}^-$]{} presents an electronically saturated system, as discussed above. DFT calculatons indicate that the 