the SL barrier at $V_{\text{SL}} = 0.05$ eV, but when this happens, the slope is *larger* compared to that of the pristine material. This indicates that carriers, after passing over the SL barriers, relax on the higher velocity states of the intermediate region, and propagate with larger group velocities. Figure 4(b) shows the transmission scaled over the derivative of the Fermi function $Tr \left( \partial f / \partial E \right)$, which captures the part of the transmission that actually contributes to transport. Clearly, the higher peak in the case of the SL structure (dashed-red line), indicates larger conductivity. Thus, the deeper the well between the SL barriers, the higher the mobility and conductivity of the material. **Inelastic scattering degrades the power factor:** What actually causes reduction in the $PF$, is the presence of energy relaxation, which is a result of inelastic scattering, in our case OP scattering. In the second column of Fig. 3, we show how the TE coefficients change in the presence of inelastic scattering alone. Because the phonon absorption process is weaker in the OP case as a consequence of the lower than unity phonon occupation number, the conductance of the pristine channel case (blue bars) is 