[@Kontos]$^{-}$ [@Weides3] containing an additional tunnel barrier I, the $J_{C}R_{N}$ product in a $0$-state is increased [@Ryazanov3], however in a $\pi $-state $V_{C}$ is still too small [@Vasenko; @Vasenko1] due to strong suppression of the superconducting correlations in the ferromagnetic layer.

Recently, new SIsFS type of magnetic Josepshon junction was realized experimentally [@Ryazanov3; @Larkin; @Vernik; @APL]. This structure represents a connection of an SIs tunnel junction and an sFS contact in series. Properties of SIsFS structures are controlled by the thickness of s layer $d_{s}$ and by relation between critical currents $J_{CSIs}$ and $J_{CsFS}$ of their SIs and sFS parts, respectively. If the thickness of s-layer $d_{s}$ is much larger than its coherence length $\xi _{S}$ and $J_{CSIs}\ll
J_{CsFS} $, then characteristic voltage of an SIsFS device is determined by its SIs part and may reach its maximum corresponding to a standard SIS junction. At the same time, the phase difference $\varphi $ in a ground state of an SIsFS junction is controlled by its sFS part. As a result, both $0 $- and $\pi $-states can be achieved depending on a thickness of the F layer. This opens the possibility to realize controllable $\pi $ junctions having large $J_{C}R_{N}$ 