} \propto \theta_{SH} \Vec{J}_s \times \Vec{\sigma}$$

where $\theta_{SH}$ is the spin Hall angle which defines the conversion efficiency between the charge current ($J_c$) and $J_s$, and $\Vec{\sigma}$ is the spin matrices governed by the spin polarization direction. Therefore, in order to get high $V_{ISHE }$ and hence $g_{r}^{\uparrow \downarrow}$ in a FM/HM heterostructure, $\theta_{SH}$ of the HM needs to be large. The value of $\theta_{SH}$ mostly depends on spin orbit interaction (SOI) and conductivity of the HM \[2,14\]. Efficient interfacial spin transport critically depends on the type of interfaces and its associated FM and HM materials, FM materials with low magnetic damping ($\alpha$) are important to generate large spin current and hence high $g_{r}^{\uparrow \downarrow}$ \[2\]. In this context various low damping materials such as NiFe, CoFeB, and $Y_3Fe_5O_{12}$ have been studied. Further there is another class of half metallic materials e.g Heusler alloys which have been established as low damping systems. It is also noted here that spin pumping and the resultant spin current can be described as an accumulation of the up and down spins \[15\]. Therefore, it is expected that in Heusler alloys spin pumping efficiency will be larger due to the presence of only one type 