[@Stern2006].

Closely related to AHE is the spin Hall effect (SHE) [@Sinova2015]. While AHE is a phenomenon observed in systems with spin-imbalance, where spin-dependent scattering creates spatial charge separation, SHE occurs in systems with equally populated spin subbands, where spin-dependent scattering creates a spatial spin separation. Therefore, AHE and SHE are governed by the same mechanisms [@Sinova2015] and materials with a high SO constants are best suited for studying SHE. One of such systems is HgTe QW, in which a large value of the SO parameter was found [@Gui2004b]. In Ref. [@Bruene2010], a high mobility HgTe/HgCdTe QW was used in a device geometry proposed in [@Hankiewicz2004]. In the applied experimental scheme the inverse SHE was used for the detection of a spin accumulation induced by SHE. HgTe QW was etched to form an H-shaped device, with two legs connected by a short channel. The electrical current applied to one of the legs generated a spin current through the connecting channel. The generated spin current, in turn, generated transverse voltage due to inverse SHE. This non-local voltage induced in the other leg of the device can dominate over local contributions if the separation between the legs is large enough. The device 