\[41\], while a

$B$-independent scaling behavior has been observed in dirtier samples \[42\]. This expectation \[18\] of an algebraic and $B$-dependent scaling of resistance in the vortex slush regime is different from the thermally-activated vanishing in the slush regime argued by Worthington et al. \[35\].

So far, our discussion has been limited to the field range in which the VG transition occurs (at or) below the first order line or its extraporation to higher fields than $B_{\rm ucp}$. Since, as mentioned above, the pinning disorder becomes effectively weaker in lower fields, it may be natural to expect the first order transiiton not to terminate at lower fields. However, the [*thermal*]{} first order transition should not occur any longer in fields where a glass transition line exists above $T_m(B)$, and a lower critical point $B_{\rm lcp}$ of the first order line should appear if the glass transition lies above $B_m(T)$ in lower fields \[19\].

Actually, this situation is realized even at weak disorder in the present LLL approach which may be qualitatively valid far above the $H_{c1}(T)$. To see this, let us first consider the case with only [*line*]{}-like disorder parallel to ${\bf B}$ \[19,43\], defined by ${\overline {u_j({\bf r}) u_l({\bf 