to the conductivity and thickness of the HM layer \[34\].

For the separation of spin pumping contribution from the $\it{V_{meas}}$ by excluding other spurious effects, the $\it{V_{meas}}$ versus $\it{H}$ plots for the samples S1 (Fig. 3) and S5 (Fig. \[fig4\]) were fitted with Lorentzian equation \[35\] which is given by:

$$\label{q7}
\begin{aligned}
    V_{meas} = V_{sym} \frac{(\Delta H)^2}{(H-H_r)^2+(\Delta H)^2}+ \\
    V_{asym} \frac{2 \Delta H (H - H_r)}{(H-H_r)^2+(\Delta H)^2}
    \end{aligned}$$

![$V_{meas}$ versus $\it{H}$ and FMR signal for sample S5 at the $\phi$ values of (a) 0$^{\circ}$, (b) 30$^{\circ}$, (c) 90$^{\circ}$ (d) 180$^{\circ}$. Open symbols are representing the measured voltage. Experimental data are fitted (solid lines) using equation (\[q7\]). Dashed and dotted lines are plots for components of symmetric ($V_{sym}$) and anti-symmetric ($V_{asym}$) voltage fitted to equation (\[q7\]). []{data-label="fig4"}](fig4.png){width="45.00000%"}

where *$V_{sym}$* and *$V_{asym}$* are the symmetric and anti-symmetric components. Solid lines are fits to the experimental data. The $V_{sym}$ consists of major contribution from spin pumping, while minor contributions from AHE, and AMR effects. The AHE contribution is zero here if the *rf* field and *H* are perpendicular to each other, which is the case in our measurement. Whereas the AHE and AMR are the major contributions in the *$V_{asym}$* component. Fig. 3 