films is about 50 nm. The electrical resistivity was measured down to 2 K. The inset plots the logarithmic electrical resistivity ln$\rho$ versus 1/$T$. The solid black lines are fits to $\rho$ = $\rho_0$ e$^{\varepsilon/\textup{k}_BT}$.[]{data-label="fig3"}](Fig3.eps){width="3.4in"}

Physical properties of LaCoO$_3$ films
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![(Color online) (a) Structure of prepared thin films. (b)-(c) Schematic plot of longitudinal resistance (R$_{xx}$) and transverse Hall resistance (R$_{xy}$) measurements and notations of different field scans in the patterned Hall bar Pt/LCO hybrids. The magnetic field can be applied in the $xy$, $xz$, and $yz$ planes with angles $\theta_{xy}$, $\theta_{xz}$, and $\theta_{yz}$ relative to the $y$-, $z$-, and $z$-axis.[]{data-label="fig4"}](Fig4.eps){width="3.4in"}

![(Color online) (a) The extraordinary Hall resistance R$_\textup{EHR}$ of 2 nm Pt thin film sputtered on LCO/LAO film at different temperatures down to 2 K. (b) The R$_\textup{EHR}$ of Pt/LCO/LAO hybrids with different Pt thickness, i.e., 2, 3, 5, and 10 nm, which were measured at 2 K. The R$_\textup{EHR}$ can be derived by subtracting the linear background of ordinary Hall resistance.[]{data-label="fig5"}](Fig5.eps){width="3.4in"}

According to the previous investigations, the magnetic properties and insulating nature of LaCoO$_3$ film can be tuned by epitaxial strain on different single crystalline substrates [@Fuchs2007; @Fuchs2008; @Herklotz2009; @Mehta2015]. We have carefully optimized the depositing conditions by 