[@joulain2005surface], surface-phonon polariton [@RN14], and so on. The NFRHT between different materials, such as semiconductor or bilayer graphene, can be electronically controlled by the photon chemical potential or gate voltage bias [@PhysRevB.91.134301; @PhysRevB.85.155422; @yu2017ultrafast; @peng2015thermal]. Moreover, the novel electrically manipulated properties of 2D materials can give an additional knob to tune the RHT in nonequilibrium conditions.

Here we explore the RHT between two graphene layers (double-layer graphene) across a separation gap by drifting one of the layers with a constant drift velocity or voltage bias, through modeling by the fluctuational electrodynamics (FE) and nonequilibrium Green’s function (NEGF), respectively. We demonstrate the existence of drift-induced RHT in double-layer graphene, with intensity depending quadratically on the drift velocities or voltage bias. The RHT produced by the temperature imbalance can even be suppressed by drift-induced RHT, and the heat flux can be switched off by the voltage bias. We interpret that this drift effect is related to the negative Landau damping in graphene[@morgado2017negative]. The physics is generic and it appears in between bulk graphene sheets or nanosized flecks.

We consider a two-layer graphene system, where the bottom and top layer are labeled by 1 and 2 respectively, separated by a vacuum gap of 