\begin{aligned}
    J_s \approx (\frac{g_{eff}^{\uparrow \downarrow}\hbar}{8\pi})(\frac{\mu_0 h_{rf}\gamma}{\alpha})^2\times\\
    [\frac{\mu_0 M_s\gamma+\sqrt{(\mu_0 M_s\gamma)^2+16(\pi f)^2}}{(\mu_0 M_s\gamma)^2+16(\pi f)^2}](\frac{2e}{\hbar})
    \end{aligned}$$

$$\label{q15}
    V_{ISHE}=(\frac{w_y}{\sigma_{FM} t_{FM}+\sigma_{Pt} t_{Pt}})\times \theta_{SH} l_{sd}^{Pt}tanh(\frac{t_{Pt}}{2 \lambda_{Pt}}) J_s$$

The resistivity of the samples were measured using the four probe technique. The *$\sigma_{Pt}$* and *$\sigma_{CFMS}$* are found to be 2.3 $\times 10^{-7} \Omega$.m and 1.7$\times 10^{-6} \Omega$.m respectively. $\sigma$ corresponds to the conductivity of the individual layers. The *rf* field ($\mu_0 h_{rf}$) and CPW transmission line width ($w_y$) value for our set up are 0.05 mT (at 11 mW rf power) and 200 $\mu$m, respectively. The obtained values of $\theta_{SH}$ are plotted in the Fig. \[fig6\](b). The values of $\theta_{SH}$ are comparable to the literature value \[48\]. In our case, we are observing higher SHA value for sample S1 in comparison to the sample S5. It may be due to the higher resistivity of the 3 nm Pt layers, which is consistent to the results obtained by J. Liu $\it{et al.}$ \[47\].

Further, we also performed power dependence of *$V_{ISHE}$* measurements (Fig. A5, supplementary information). We observed a linear dependence of *$V_{ISHE }$*, which confirmed the spin pumping at $CFMS/Pt$ interface.

Conclusion
==========

We presented the study of the spin pumping and inverse spin Hall effect measurements in 