In most of the works devoted to QWs based on wide band-gap II-VI semiconductors, the QW was grown along the \[001\] direction on a GaAs substrate. Though there have been studies of QWs grown along other crystallographic directions, they are rather scarce. The big progress in realizing 2D systems based on II-VI materials was achieved after the introduction of halogen dopants. The main advantage of halogen doping over previously more traditional indium doping is its smaller tendency to produce DX-like centers with deep in-gap states [@Wasik1999] and higher doping efficiency [@Scholl1993]. Implementation of halogen doping allowed to create 2DEGs in non-magnetic QWs CdTe/CdMgTe [@Scholl1995; @Karczewski1998], ZnTe/CdSe [@Smorchkova1998] as well as in their DMS analogues: CdTe/CdMnTe [@Scholl1993], ZnSe/(Zn,Cd,Mn)Se [@Smorchkova1996; @Smorchkova1997], CdMnTe/CdMgTe [@Wojtowicz1998], ZnTe/CdMnSe [@Knobel1999], etc. In the case of DMS QWs, the magnetic ions (Mn ions are usually used for this purpose) can be placed either into the barrier materials or into the QWs themselves. In both cases, the electron wavefunction in the QW overlaps with that of the magnetic ion giving rise to s-d exchange interaction, which modifies QW energy levels, especially in the presence of an external magnetic field. There are two approaches to place magnetic dopants into QW. 