after he discovered the Hall effect [@Hall1880]. Nowadays this phenomenon is known as AHE and its contribution to total Hall resistance is proportional to the magnetization of the studied material. Thus total Hall resistivity $\rho_{xy}$ is described by the empirical formula: $\rho_{xy}=R^{\text{H}}*B+R^{\text{AHE}}*M$, where $R^{\text{H}}$ is ordinary Hall coefficient related to carrier density and $R^{\text{AHE}}$ is anomalous Hall coefficient. However, the mechanism of AHE is rather complex and consists of three contributions: intrinsic, side jump, and skew-scattering [@Nagaosa2010]; the latter two mechanisms strongly depend on the strength of SO coupling. Since AHE occurs in magnetic materials, DMS-based QWs are a natural place for studying this effect in 2D. AHE contribution to the Hall effect was extracted in the case of paramagnetic $\text{Zn}_{1-x-y}\text{Cd}_{y}\text{Mn}_{x}\text{Se}$ QW in the Ref. [@Cumings2006]. A temperature-independent carrier density (and thus the ordinary Hall contribution) was calculated from the period of SdH oscillations, and magnetization was measured by magneto-luminescence. The temperature dependence of the extracted AHE contribution was found to follow the paramagnetic Brillouin-like magnetization of Mn ions (eq. (\[eqMn\_mag\])). It was found that the AHE coefficient $R^{\text{AHE}}\sim\rho_{xx}$, which was interpreted as the dominant skew-scattering mechanism despite the fact that the SO parameter in the ZnSe system is small 