size was chosen to ensure operation in a quasiballistic regime. Gate voltage was used to control the strength of the Rashba SO coupling by variation of the electric field across the QW and the Fermi energy $E_F$ in the QW. Inverse SHE was found to be an order of magnitude higher in [*p*]{}-type regime with strong SO coupling than in weakly SO coupled [*n*]{}-type regime. Here it is worth noting that SHE was also detected using Kerr rotation measurements in 1.5 $\mu m$ thick epilayer of ZnSe [@Stern2006] despite the small value of the SO parameter in this material.

### Quantum Hall effect in 2D systems

Integer QHE (IQHE) was observed by von Klitzing in 1980 [@Klitzing1980] as an appearance of plateaus in a Hall resistance $R_{xy}$ while varying the gate voltage in a Si-MOSFET. It was found that these plateaus in Hall resistance correspond to quantized values of $R_{xy}=\frac{h}{\nu e^2}$, where $\nu$ is an integer number, $h$ is the Planck constant, and $e$ is the electron charge. The precision of the QHE plateau quantization is 1 part per billion, which makes it a perfect resistance standard. Owing to the rapid progress in growing clean structures, soon after the discovery 