character, ultimately related to the different role played by the non interacting band in the two cases. Doping with electrons, the extra carriers populate essentially the correlated orbitals while the p-band remains almost filled and its role is to allow the delocalization of correlated electrons. In other words, in this regime there are no multi-band effects and the hybridization plays a minor role. Therefore the f-electrons behave essentially as in a single-band Hubbard model with an effective hopping of the order of $t_\mathrm{eff}$.

![(Color online) Evolution of the imaginary part of the conduction electrons self-energy $\Im\Sigma_p(\iome)$ for increasing temperature. Data are from finite temperature Lanczos ED with doping $\d=0.1$. []{data-label="fig2.3"}](fig4.eps){width="45.00000%"}

In the hole doped regime the electronic configuration is substantially different. The holes are essentially associated to the absence of $p$-electrons, and they tend to bind to the local moments of the almost half-filled correlated orbitals[@sordi09]. It is already apparent that this state can not be described by a single-band model. This effect is evident in the behavior of the inter-orbital moment-moment correlation $$\bra m_{zp}\cdot m_{zf}\ket
=\bra
(n_{p\up}-n_{p\dw})\cdot(n_{f\up}-n_{f\dw})
\ket$$ reported in , which shows how the moment of the doped p-holes aligns with the moment of the localized f-electron. The 