of the electrodes induce a potential barrier for IXs between S and G and between G and D, even when all electrodes are at the same potential. This barrier, however, is low in the ON state and can be easily surmounted by the acoustic field. The transport, however, becomes completely blocked when the gate voltage is increased to V$_{G}$=2.5 V (OFF state in Fig. 2(c)). The switching efficiency is quantified in Fig. 2(d), which compares $\Delta$I$_{PL}$ profiles along the SAW transport channel in the OFF and ON states. Note that in contrast to purely electrostatic transistor [@Ref15; @Ref16; @Ref17; @Ref18], which require a potential gradient between source and drain, the EXAT can be operated with these two ports at the same bias levels. The lower panels in Fig. \[EXAT\] ((e) and (f)) compare the experimental results for the IX transport across an EXAT with a numerical modelling of the dynamics of the IX fluid. This model, which uses the experimental sample parameters, includes the mutual interactions between IXs and the external potential induced by the electrostatic gates and the SAW. Details of the model together with addition simulation results (including videos demonstrating the EXAT operation) are contained in the supplementary 