$of the sFS junction. The coefficient $\beta $ in (\[EqForKhi1\]) is a function of F layer thickness, which becomes close to unity in the limit of small $d_{F}$ and exhibits damped oscillations with $d_{F}$ increase (see analytical expression for $\beta $ (\[pq1\])). That means that there is a range of thicknesses, $d_{Fn,\text{ }}$determined by the equation $\beta =0$, at which $J_{S}\equiv 0$ and there is a transition from $0$ to $\pi $ state in sFS part of SIsFS junction. In other words, crossing the value $d_{Fn}$ with an increase of $d_{F}$ provides a $\pi $ shift of $\chi $ relative to the phase of the S electrode.

In Fig.\[Phase\] we clarify the classification of operation modes and demonstrate the phase diagram in the $(d_{s},d_{F})$ plane, which follows from our analytical results (\[pq1\])-(\[EqDsmall1\]). The calculations have been done at $T=0.9T_{C}$ for $h=H/\pi T_{C}=10$, $\Gamma _{BI}=200$ and $\Gamma =5.$ The structures with s-layer smaller than critical thickness  $d_{sc}=\pi \xi _{S}(T)/2$ correspond to the *mode (2)* with fully suppressed superconductivity in the s layer. Conversely, the top part of diagram corresponds to s-layer in the superconductive state (*mode (1)*). This area is divided into two parts depending on whether the weak place located 