flakes are similar to those of 6L and bulk flakes. Our devices are thus comparable with those in literature[@YeScience2012; @LuScience2015; @SaitoNatPhys2016; @CostanzoNatNano2016; @FuQuantMater2017]. We do not consider 1L flakes as they exhibit a lower $T_c$ and their mobility is suppressed due to disorder[@CostanzoNatNano2016; @FuQuantMater2017].

FL-MoS$_2$ flakes are prepared by micro-mechanical cleavage[@NovoPNAS2005] of 2H-MoS$_2$ crystals from SPI Supplies. The 2H phase is selected to match that in previous reports of gate-induced SC[@YeScience2012; @CostanzoNatNano2016]. Low resistivity ($<0.005\Omega\cdot$cm) Si coated with a thermal oxide SiO$_2$ is chosen as a substrate. We tested both 90 or 285nm SiO$_2$ obtaining identical SC results. Thus, 90nm SiO$_2$ is used to minimize the back gate voltage $V_{BG}$ , while 285nm is used to minimize leakage currents through the back gate $I_{BG}$. Both SiO$_2$ thicknesses provide optical contrast at visible wavelengths[@CasiraghiNanoLett2007]. A combination of optical contrast, Raman spectroscopy and atomic force microscopy (AFM) is used to select the flakes and determine N.

Electrodes are then defined by patterning the contacts area by e-beam lithography, followed by Ti:$10$nm/Au:$50$nm evaporation and lift-off. Ti is used as an adhesion layer[@Kutz2002], while the thicker Au layer provides the electrical contact. Flakes with irregular shapes are further patterned in the shape of Hall 