physics.app-ph
Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C
P. Fiorenza F. Cordiano S. M. Alessandrino A. Russo E. Zanetti M. Saggio C. Bongiorno F. Giannazzo F. Roccaforte