cond-mat.mtrl-sci physics.app-ph
Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps
Patrick Fiorenza Marco Zignale Marco Camalleri Laura Scalia Edoardo Zanetti Mario Saggio Filippo Giannazzo Fabrizio Roccaforte