cond-mat.mtrl-sci physics.app-ph
Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy
Jingxuan Kang Mikel Gómez Ruiz Duc Van Dinh Aidan F Campbell Philipp John Thomas Auzelle Achim Trampert Jonas Lähnemann Oliver Brandt Lutz Geelhaar