Ga2O3에피층의 두께가 150 nm이기 때문에, 소자 간의 격리를 위해 300 nm 깊이로 충분히 MESA 식각을 진행하였다.
Since the thickness of the Ga2O3 epilayer was 150 nm, MESA etching was performed sufficiently to a depth of 300 nm for isolation between devices.