[!lemma=in] [lemma=the] [word=Si] [word=substrates | □=□]
[!lemma=in] [lemma=the] [word=Si] [word=substrates | tag=□]
[!lemma=in] [lemma=the] [word=Si] [word=substrates | lemma=□]
One possibility is an SiOxNy film with two nitrogen-enhanced layers : first , nitrogen at or near the Si / SiO2 interface to improve hot-electron immunity , and second , an even higher nitrogen concentration at the SiO2 / polysilicon interface , as this is where it can best be used to minimize the penetration of boron from the heavily doped gate electrode [ 29 ] . Results revealed that 100-nm-thick Si0.7Ge0.3 layers with the diameter of 125mm and full strain relaxation are successfully prepared by pre-modifying the Si substrates using 50keV Ar + ions . An improved cycle performance was observed with the Si / NiSi2 / carbon composite electrodes . The studies revealed that SCA interaction with the Si surface was enhanced by the oxygen plasma pre-treatment of the Si substrates . However , the acid strength of the medium-strong acid sites increased with increasing values of this ratio.The isomer selectivity in the palladium catalysts increased with the Si / Al ratio ( from 54.3 to 67.8mol % in samples without binder ) . The role of the EMT number for field-induced localizations is discussed with the Si / SiO2-system as an example . This could explain why incorporated nitrogen ( especially in N2O or NO oxides ) is often associated with the Si / SiO2 interface , consistent with a special , stabilizing role of the nitrogen at the interface . In 2005 , Kennedy and his wife , Terry , were significant contributors to Augsburg ’ s Access to Excellence Campaign in support of the Si - Melby athletic expansion project .