In early 2001, RFMD bought RF Nitro Communications (RF Nitro) that was founded in Charlotte, NC by Dr. James Shealy in 2000 using technology licensed from Cornell to produce on 100mm(4inch) wafers, advanced wide-band gap semiconductor materials and RFIC products (InGaP HBT, GaAs PHEMT, and GaN HEMT on both silicon carbide and sapphire substrates) typically implemented in laser diodes that were further incorporated into broadband wireless and fibre-optic end products.
In early 2001, RFMD acquired RF Nitro Communications (RF Nitro), a company founded by Dr. James Shealy in Charlotte, NC in 2000 with technology licensed from Cornell to produce on 100mm(4inch) wafers, advanced wide-band gap semiconductor materials and RFIC products (InGaP HBT, GaAs PHEMT, and GaN HEMT on both silicon carbide and sapphire substrates). These components were commonly used in laser diodes that were incorporated into broadband wireless and fibre-optic end products.