Most tandem-cell structures are based on higher performance semiconductors, notably indium gallium arsenide (InGaAs). Three-layer InGaAs/GaAs/InGaP cells (bandgaps 0.94/1.42/1.89 eV) hold the efficiency record of 42.3% for experimental examples.
Most tandem cell structures are built using high-performance semiconductors, particularly indium gallium arsenide (InGaAs). Three-layer InGaAs/GaAs/InGaP cells with bandgaps of 0.94 eV, 1.42 eV, and 1.89 eV have achieved the highest efficiency record for experimental devices.