Hafnia is used in optical coatings, and as a high-κ dielectric in DRAM capacitors and in advanced metal–oxide–semiconductor devices. Hafnium-based oxides were introduced by Intel in 2007 as a replacement for silicon oxide as a gate insulator in field-effect transistors.
Hafnia is used in optical coatings and high-κ dielectrics for DRAM capacitors and advanced metal–oxide–semiconductor devices. Hafnium-based materials were introduced by Intel in 2007 to replace silicon oxide as a gate insulator in field-effect transistors.