VO is a semiconductor owing to delocalisation of electrons in the t2g orbitals. VO is a non-stoichiometric compound, its composition varying from VO0.8 to VO1.3.
Due to the delocalization of electrons in the t2g orbitals, VO acts as a semiconductor. As an imperfect compound, VO's composition varies from VO0.8 to VO1.3.