A parasitic NPN bipolar junction transistor (BJT) is thus formed with the drain (n-type) acting as the collector, the base/source combination (n-type) as the emitter, and the substrate (p-type) as the base. As is explained below, a key element to the operation of the ggNMOS is the parasitic resistance present between the emitter and base terminals of the parasitic npn BJT.
A parasitic NPN bipolar junction transistor (BJT) is formed with the drain acting as the collector, the base/source combination as the emitter, and the substrate as the base. The key element in the operation of the ggNMOS is the parasitic resistance between the emitter and base terminals of this parasitic BJT.