a process chamber is described wherein a plasma is generated by electron - cyclotron resonance and is isolated from chamber walls by a magnetic field from two diametrically - opposed solenoids . a substance to be deposited on a substrate is introduced into the chamber by laser ablation , evaporation , or other techniques . the ecr plasma has a relatively large volume to ensure a homogeneous influx of material , and a low potential that results in less aggressive ion bombardment of the substrate . the process chamber can be used in a variety of processes , including deposition and oxidation of superconducting metal oxides , and reduction of indium - tin - oxide with nitrogen at low temperatures .