a novel interlevel contact via structure having low contact resistance and improved reliability , and method of forming the contact via . the method comprises steps of : etching an opening through an interlevel dielectric layer to expose an underlying metal layer surface ; and , performing a low energy ion implant of an inert gas into the exposed metal underneath ; and , depositing a refractory liner into the walls and bottom via structure which will have a lower contact resistance due to the presence of the proceeding inert gas implantation . preferably , the inert nitrogen gas reacts with the underlying exposed copper metal to form a thin layer of cun .