a photolithography mask for optically transferring a pattern formed in said mask onto a substrate and for negating optical proximity effects . the mask includes a plurality of resolvable features to be printed on the substrate , where each of the plurality of resolvable features has a longitudinal axis extending in a first direction ; and a pair of non - resolvable optical proximity correction features disposed between two of the plurality of resolvable features , where the pair of non - resolvable optical proximity correction features has a longitudinal axis extending in a second direction , wherein the first direction of the longitudinal axis of the plurality of resolvable features is orthogonal to the second direction of the longitudinal axis of the pair of non - resolvable optical proximity correction features .