measuring surface profiles of structures on integrated circuits is difficult when feature sizes are less than 100 nanometers . atomic force microscopy provides surface profile measurement capability on flat horizontal surfaces , but has difficulty with three - dimensional structures such as mos transistor gates , contact and via holes , interconnect trenches and photoresist patterns . an atomic force microscopy probe with two atomically sharp tips configured to facilitate measurements of three - dimensional structures is disclosed . a method of making such measurements using the disclosed probe and a method of fabricating an ic encompassing the method are also claimed .