a method for detecting semiconductor process stress - induced defects . the method comprising : providing a polysilicon - bounded test diode , the diode comprising a diffused first region within an upper portion of a second region of a silicon substrate , the second region of an opposite dopant type from the first region , the first region surrounded by a peripheral dielectric isolation , a peripheral polysilicon gate comprising a polysilicon layer over a dielectric layer and the gate overlapping a peripheral portion of the first region ; stressing the diode ; and monitoring the stressed diode for spikes in gate current during the stress , determining the frequency distribution of the slope of the forward bias voltage versus the first region current at the pre - selected forward bias voltage and monitoring , after stress , the diode for soft breakdown . a dram cell may , be substituted for the diode . the use of the diode as an antifuse is also disclosed .