a substrate having buried address lines and a first dielectric layer is provided . a conductive electrode is formed in the first conductive layer . a top portion of the conductive electrode is exposed . a second dielectric layer is deposited on surface of the exposed top portion . the second dielectric layer defines a recess around the top portion . a third dielectric layer is deposited over the second dielectric layer . a portion of the third dielectric layer and a portion of the second dielectric layer are removed , thereby exposing a top surface of the top portion of the conductive electrode . the top portion of the conductive electrode is salicidized to form a heating stem . the remaining third dielectric layer is selectively removed from the recess . a phase - change material layer covers the heating stem and the second dielectric layer . the phase - change material layer is etched , thereby forming a phase - change storage cap .