a structure including a tiw oxygen plasma mask , a photoresist mask above and in contact with the tiw oxygen plasma mask , a 2000 angstrom thick oxygen plasma vaporizable ruo 0 . 8 electrode layer partially under and in contact with the tiw oxygen plasma mask , the ruo 0 . 8 electrode layer not being completely covered by a pattern of the tiw oxygen plasma mask , a first side of a pzt ferroelectric layer in contact with the ruo 0 . 8 electrode layer and a second ruo 0 . 8 electrode layer in contact with a second side of the pzt ferroelectric layer .