disclosed herein are methods for better variable height control of finfet patterned fins . in one example , the method includes forming a layer on a substrate , patterning that layer to create trenches , and forming a common stack material in the trenches . next , a pfet masking material is formed over a portion of the structure , and an nfet channel material is formed in the unmasked trenches . the pfet masking material is removed and an nfet masking material is formed over the portion of the structure that includes the nfet channel material , and a pfet channel material is formed in the unmasked trenches . next , the unmasked patterned material is made flush with the pfet channel material , thereby creating a difference in height with the masked pattern material . finally , the nfet masking material is removed and the patterned layer is recessed to expose pfet and nfet channel material fin structures of differing heights .