a method of forming a semiconductor device includes forming a transistor gate stack over a substrate having an active area and a shallow trench isolation region . first sidewall spacers are formed on the transistor gate stack , and an isotropic etch process is applied to isotropically remove an excess portion of a metal layer included within the transistor gate stack , the excess portion left unprotected by the first sidewall spacers . second sidewall spacers are formed on the transistor gate stack , the second sidewall spacers completely encapsulating the metal layer of the transistor gate stack .