semiconductor power devices with improved electrical characteristics are disclosed including rectifying contacts on a specially prepared semiconductor surface with little or no additional exposure to other chemical treatments , with oxide passivation and edge termination at a face of the semiconductor substrate adjacent to and surrounding the power device . the edge termination region is preferably formed by implanting electrically inactive ions , such as argon , into the substrate face at sufficient energy and dose to amorphize a portion of the substrate face and preferably self - aligned to the device . the passivated , edge - terminated devices exhibit improved characteristics relative to passivated devices with characteristics approaching those of the native semiconductor with the additional advantages of passivation protection . methods for making and using the devices are also disclosed .