semiconductor devices include a first and a second set of parallel fins , each set of fins having a same number of fins and a pitch between adjacent fins below a minimum pitch of an associated lithography process , where a spacing between the first and second set of fins is greater than the pitch between adjacent fins ; a gate structure over the first and second sets of fins ; a merged source region that connects the first and second sets of fins on a first side of the gate structure ; and a merged drain region that connects the first and second sets of fins on a second side of the gate structure .