a semiconductor device and a method for manufacturing the device . the method includes : depositing a first dielectric layer on a semiconductor device ; forming a plurality of first trenches through the first dielectric layer ; depositing an insulating fill in the plurality of first trenches ; planarizing the plurality of first trenches ; forming a first gate contact between the plurality of first trenches ; depositing a first contact fill in the first gate contact ; planarizing the first gate contact ; depositing a second dielectric layer on the device ; forming a plurality of second trenches through the first and second dielectric layers ; depositing a conductive fill in the plurality of second trenches ; planarizing the plurality of second trenches ; forming a second gate contact where the second gate contact is in contact with the first gate contact ; depositing a second contact fill in the second gate contact ; and planarizing the second gate contact .