a method of electrically linking the contacts of a semiconductor device to their corresponding digit lines . the method includes disposing a quantity of mask material into a trench through which the contact is exposed . the mask also abuts a connect region of a conductive element of a corresponding digit line and , therefore , protrudes somewhat over a surface of the semiconductor device . a layer of insulative material is disposed over the semiconductor device with the mask material being exposed therethrough . the mask material is then removed , leaving open cavities that include the trench and a strap region continuous with the trench and with a connect region of the corresponding digit line . conductive material is disposed within the cavity and electrically isolated from conductive material disposed in adjacent cavities , which define conductive plugs or studs and conductive straps from the conductive material . these plugs or studs and straps provide an electrically conductive link between each contact of the semiconductor device and its corresponding digit line . semiconductor devices that include features that have been fabricated in accordance with the method of the present invention are also within the scope of the present invention .