a fin field effect transistor device and a method of fabricating a finfet are described . the method includes forming a replacement gate stack on a substrate between inside walls of sidewall spacers , epitaxially growing a raised source drain on the substrate adjacent to outside walls of the sidewall spacers , and forming a silicide above the rsd and along the outside walls of the sidewall spacers . the method also includes depositing and polishing a contact metal above portions of the replacement gate stack and the rsd , the contact metal contacting the silicide along the outside walls of the sidewall spacers adjacent to the portions of the replacement gate stack .