in accordance with the objectives of the invention a new method is provided for repairing photolithographic exposure masks . the invention uses an etch function of a conventional mask repair tool . the invention addresses defects that occur in a pattern of opaque material created over the surface of an exposure mask whereby an opening exists in the opaque material . the invention uses a focused e - beam exposure of the surface of the exposure mask to purposely “ damage ” this surface over the area where the opaque material is required to be present . repair accuracy is in this manner easy to control , the conventional problem of peeling of the opaque or light sensitive material is eliminated .