the semiconductor device comprises an impurity diffusion layer formed on a semiconductor substrate , an insulating film for covering the impurity diffusion layer , a capacitor formed on the insulating film and consisting of a lower electrode , an oxide dielectric film , and an upper electrode , an interlayer insulating film for covering the capacitor , two opening portions formed in the interlayer insulating film to expose the impurity diffusion layer and the upper electrode , a local interconnection formed in two opening portions , and on the interlayer insulating film in a range containing at least a region where the upper electrode contacts the oxide dielectric film , and another interlayer insulating films for covering the local interconnection .