it is an object of the present invention to provide a photomask unit suitable for forming a microscopic pattern of 32 nm or smaller on a photoresist film using the euv exposure technique and being able to reliably prevent the flatness of a photomask from being lowered . the photomask unit 1 according to the present invention includes a pellicle membrane 6 , a pellicle frame 7 onto one surface of which a region of the pellicle membrane 6 in the vicinity of side portions of the pellicle membrane 6 is fixed , a photomask 2 and a stage 3 onto one surface of which the photomask 2 and the pellicle frame 7 are fixed , and the pellicle frame 7 is fixed onto the stage 3 at a region outside of a region of the stage 3 onto which the photomask 2 is fixed .