the present invention provides novel methods of fabricating microelectronics structures , and the resulting structures formed thereby , using euv lithographic processes . the method involves utilizing an assist layer immediately below the photoresist layer . the assist layer can either be directly applied to the substrate , or it can be applied to any intermediate layer that may be applied to the substrate . the preferred assist layers are formed from spin - coatable , polymeric compositions . the inventive method allows reduced critical dimensions to be achieved with improved dose - to - size ratios , while improving adhesion and reducing or eliminating pattern collapse issues .