a new method is provided for the creation of copper interconnects . a pattern of copper interconnects is created , a protective layer of semiconductor material is deposited over the surface of the created copper interconnects . the protective layer is patterned and etched , exposing the surface of the pattern of copper interconnects . the exposed copper surface is ar sputtered after which a first barrier layer is deposited . the patterned and etched layer of protective material is removed , leaving in place overlying the pattern of copper interconnects a protective layer of first barrier material . a dielectric barrier layer , in the form of a layer of etch stop material , is deposited after which additional layers of dielectric interspersed with layers of etch stop material are deposited . via and trench patterns are etched aligned with a copper pattern to which an electrical contact is to be established , the copper pattern being protected by the first layer of barrier material . a second barrier layer is deposited , the via and trench pattern is filled with copper after which excess copper is removed by polishing the surface of the deposited layer of copper .