according to one exemplary embodiment , a transistor includes a channel region situated adjacent to a field oxide region . the transistor further includes a gate have a first portion situated over the channel region and a second portion situated over the field oxide region . the transistor further includes at least one gate contact situated on the second portion of the gate , where the second portion of the gate does not reduce a channel width of the channel region , and where the second portion of the gate does not increase gate resistance . according to this exemplary embodiment , the transistor further includes a drain active region , where the drain active region is surrounded by the gate . the transistor further includes a source active region surrounding the gate . the transistor further includes a well , where the channel region is situated between the well and the source active region .