in a magnetic random access memory has a memory device portion using magnetic material , a high - frequency current suppressor is arranged in the vicinity of the magnetic material to suppress a high - frequency current which flows in the memory device portion . the memory device and the high - frequency current suppressor may be collectively molded in a mold body of a plastic resin . it is preferable that the high - frequency current suppressor is made by a thin film of a granular magnetic material which has a composition represented by m - x - y where m is a magnetic metal element , y is one element selected from oxygen , nitrogen , and fluorine , and x is an element other than m and y .