a process of manufacturing a semiconductor device . the initial process steps are forming a first insulating film above a semiconductor substrate and removing a selected portion of the first insulating film to form an opening . the next step is depositing a first electrode , a dielectric film and a second electrode successively on a bottom portion of the opening , the deposits being oriented such that they are in substantially parallel relationship with a surface of the semiconductor substrate . the final steps are removing selected portions of the first electrode , the dielectric film and the second electrode , forming a capacitor at a selected position in the opening , forming a second insulating film at least in the opening , and forming a third insulating film on the second insulating film .