a thin film resistor having a characteristic that an increase phenomenon of a resistance controlled at a high temperature is generated . the resistor is obtained by controlling its composition and manufacturing method so as to suppress an increase in the resistance of a cr - si resistor thin film due to deposition of chromium silicide at a high temperature . a sputtering target , which is used as a raw material for forming the thin film , is made from chromium silicide and silicon so that some chromium silicide is already formed immediately after deposition , and chromium oxide and silicon oxide are contained in the thin film so as to suppress the speed whereat chromium and silicon , which do not form silicide , form silicide by heating after deposition and to allow the above silicide formation to advance slowly .