the invention relates to a dynamic sense amplifier , particularly for semiconductor memory devices of the eprom , eeprom and flash - eprom types , which includes a virtual ground sense circuit having a pair of output nodes , an equilibration device for equalizing the voltages at the output nodes , and respective reference and matrix circuit legs associated with the output nodes and being led to respective input terminals , the sense amplifier also includes a bias circuit portion for biasing the input terminals . the inventive amplifier distinguishes itself in that the sense circuit and equilibration device are driven by respective signals to generate a predetermined differential voltage between the output nodes before the sense circuit is activated .