a method of doping a surface portion of a layer of an integrated circuit device includes the steps of forming a layer of a semiconductor material on an integrated circuit substrate and annealing the layer of the semiconductor material at a predetermined temperature while flowing a dopant gas over the layer of the semiconductor material . more particularly , the step of forming the layer of the semiconductor material can include forming a first sub - layer of the semiconductor material on the integrated circuit substrate and forming a second sublayer of the semiconductor material on the first sublayer where the second sublayer has an increased surface area . for example , the second sublayer can be a hemispherical grained silicon layer .