a memory circuit includes at least one bit cell that receives a word line , complementary bit lines and an array supply voltage and a word line suppression circuit . the word line suppression circuit includes two pfets with their drains connected to the word line and their sources connected to the array supply voltage and an nfet with its source connected to ground and its drain connected to the word line . the nfet is inactivated before the pfets are activated . one of the pfets is activated before the other pfet is activated so as to control the slew rate of the word line and improve the static noise margin of the at least one bit cell .