indium nitride and indium - rich indium gallium nitride quantum dots embedded in single and multiple in x ga 1 − x n / in y ga 1 − y n quantum wells are formed by using tmin and / or triethylindium , ethyldimethylindium as antisurfactant during mocvd growth , wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm . controlled amounts of tmin and / or other indium precursors are important in triggering the formation of dislocation - free qds , as are the subsequent flows of ammonia and tmin . this method can be readily used for the growth of the active layers of blue and green light emitting diodes .