a method for fabricating read - only memory devices utilizing junction field - effect transistors having a conductive channel orthogonally oriented with respect to the surface of the semiconductor material composing the jfet . a fixed - position ion beam is employed to create this narrow gate channel , which extends between the jfet &# 39 ; s source and drain contact . employing such jfets as basic memory sites within a semiconductor rom circuit allows for an architecture that conforms to a minimum lattice structure layout . in addition , the resulting rom offers high speed access of data . although jfets have not been utilized as the transistor of choice within roms because of their seemingly inferior performance when compared to mosfets , the invention provides a novel architecture which significantly enhances the practicality of the jfet as a memory device .