a semiconductor device according to an embodiment of the present invention includes a semiconductor substrate ; a wiring formed in predetermined pattern above the semiconductor substrate , a first insulating film lying right under the wiring , and a second insulating film lying in a peripheral portion other than a portion right under the wiring , in which a surface layer of the first insulating film lying in a boundary surface between the first insulating film and the second insulating film is chemically modified to reinforce the surface layer .