a method in which in case different kinds of processing are consecutively conducted in a single chamber of a plasma device , a residual portion of a processing gas used in one process is prevented from affecting a next process , is disclosed . a chemical species resulting from the processing gas in one process is prevented from being generated in forming a plasma in the next processing , by introducing an inactive gas after the processing gas used in one processing is exhausted once , or by introducing the inactive gas while exhausting the processing gas , or by cyclically repeating exhaust of the processing gas and introduction of the inactive gas , prior to the next process . the degree of exhaust may be monitored on the basis of an emission spectrum of the plasma . if the exhaust is carried out between a dry etching process conducted while holding a substrate on a single electrode electrostatic chuck and a process of removing residual charge of the chuck in a state of non - bias application to the substrate , or between a just etching process and an over etching process , deterioration of an etching shape due to radicals in the plasma may be prevented .