a method for accessing a phase change memory device , wherein a first sub - plurality of bitlines is grouped in a first group and a second sub - plurality of bitlines is grouped in a second group . at least a bitline in the first and second groups are selected ; currents are supplied to the selected bitlines ; and a selected wordline is biased . the bitlines are selected by selecting a first bitline in the first group and , while the first bitline is selected , selecting a second bitline in the second group which is arranged on the selected wordline symmetrically to the first bitline in the first group .