polyorganosilicon dielectric coatings are prepared by subjecting specified polycarbosilanes to thermal or high energy treatments to generate cross - linked polyorganosilicon coatings having low k dielectric properties . the thermal process includes multi - step sequentially increasing temperature heating steps . the instantly prepared polyorganosilicon polymers can be employed as dielectric interconnect materials and film coatings for conductor wiring in semiconductor devices . these polyorganosilicon film coatings have the additional characteristics of relative thermal stability and excellent adhesion to substrate surfaces .