a semiconductor having enhanced acceptor activation is disclosed . the semiconductor comprises a ternary compound having a non - abruptly varying composition that is uniformly doped . the modulation of the chemical composition leads to a variation of the valence band energy . the modulation of the valence band results in a strong enhancement of the acceptor activation . a method for making a semiconductor having enhanced acceptor activation comprises two steps . they are forming a ternary compound semiconductor having a non - abruptly varying composition , and uniformly doping said semiconductor with a dopant . these two steps may be conducted simultaneously .