a method for use in erasing data stored in a memory cell includes asserting a voltage differential across a tank region and a gate region of the memory cell , wherein the tank region has a first conductivity type and the tank region is located within a well region of a second conductivity type . the method also includes floating the voltage level of a source region and a drain region of the memory cell , wherein the source region and the drain region are located within the tank region and have the second conductivity type . the method additionally includes discharging a charge stored in the drain region by electrically connecting the source region to an electric potential lower than the potential of the drain region and electrically connecting the well region and the tank region to a potential lower than their existing potentials .