a surface emitting semiconductor device comprises : a semiconductor region including an active layer ; a first dbr having first layers and second layers ; and a second dbr . the first and second layers are alternately arranged , and the first layers are made of dielectric material . the first dbr , semiconductor region and second dbr are sequentially arranged along a predetermined axis , and the semiconductor region is provided between the first dbr and the second dbr . the cross section of the first dbr is taken along a reference plane perpendicular to the predetermined axis . the distance between two points on an edge of the cross section takes a first value in a direction of an x - axis of a two - dimensional xy orthogonal coordinate system defined on the reference plane , and the distance between two points on the edge takes a second value in a direction of a y - axis of the above coordinate system . the first value is different from the second value . the cross section of the second dbr is taken along another reference plane perpendicular to the predetermined axis , and a shape of the cross section of the first dbr is different from a shape of the cross section of the second dbr .