a polycrystalline film having an electrical resistivity independent of temperature is disclosed . the film has substantially only one crystalline phase . the crystals forming that phase are of a semiconductive material supersaturated with a deep level dopant and have average dimensions from about 200 to 10 , 000 angstroms . at least about 10 atomic percent of the deep level dopant is dispersed within the semiconductive material crystals forming the one crystalline phase . the film is useful in making an electrical resistor whose resistance value is independent of temperature from about 4 ° kelvin to approximately 373 ° kelvin . aging effects limit utility at significantly higher temperatures .