according to the present invention , there is provided a semiconductor device , comprising : a gate electrode formed on a substrate via a gate insulating film by using a first silicide film ; diffusion layers formed in a surface portion of said substrate so as to be positioned at two ends of a channel region below said gate electrode , and having a second silicide film on surfaces thereof ; a first insulating film formed on said second suicide film of said diffusion layers ; and a second insulating film continuously formed on said first insulating film and said gate electrode , wherein a total film thickness of said first and second insulating films on said second silicide film is larger than a film thickness of said second insulating film on said gate electrode .