for compensating scattering losses of electrons in photoresists which influence electron beam lithography by altering the pattern geometry it is suggested to expose selected partial areas of a pattern to an additional irradiation dosage in a second exposure step . for that purpose , a specific mask with corresponding correction openings can be used which is applied with the same , or with a different electron beam intensity . in a particularly advantageous manner the correction of the proximity effect can be achieved when complementary masks are used ; the correction openings for the partial areas of the one complementary mask are arranged in the other complementary mask . the proximity effect is then corrected without an additional exposure step . for measuring the proximity effect a photo - optical process is suggested where line patterns with decreasing ridge width in the photoresist are defined through electron beam projection , and where the developing process of the photoresist is discontinued prematurely . the ridge edges which in the presence of the proximity effect are asymmetrical can be easily detected under the microscope .