a method for forming high density emission elements and field emission displays formed according to the method . oxygen and a silicon etchant are introduced into a plasma etching chamber containing a silicon substrate . the oxygen reacts with the silicon surface to form regions of silicon dioxide , while the silicon etchant etches the silicon to form the emission elements . the silicon dioxide regions mask the underlying silicon during the silicon etch process . high density and high aspect ratio emission elements are formed without using photolithographic processes . the emission elements formed according to the present invention provide a more uniform emission of electrons . further , a display incorporating emission elements formed according to the present invention provides increased brightness . the reliability of the display is increased due to the use of a plurality of emission elements to supply electrons for stimulating the phosphor substrate material to produce the image .