the present invention relates to a new process of the cantilever structure in the micro - electro - mechanical system , and more particularly , to a process that could overcome the contamination problem on the undesired areas during the thin - film growth . their advantages include not only to substitute the complex technique with sacrificial layer , but also to increase the yield for its simple structure and to deal the sub - micron microelectromechanical system technology for the mature stage on the wet - etching skill .