a method for making a lateral pnp transistor simultaneously with an npn transistor and the resultant device wherein a first mask defines a base - width by the resistor implant for a p - type resistor and a second mask is overlaid asymmetrically on said first mask to partially cover the collector . at the same time that the npn extrinsic base contact is made , p - type dopants are introduced in the areas exposed by the first and second masks to provide an emitter and a collector contact for the pnp transistor .