according to the invention , the thin film having the thickness controlled desirably can be easily formed using common semiconductor processes . provided is a coating liquid for forming the porous film having an excellent dielectric property and mechanical property . specifically , the coating liquid for forming a porous film comprises the condensation product obtained by condensation of one or more silicate compounds represented by the formula i j k and one more organosilate compounds represented by the formula a b c . thus , the porous insulating film having sufficient mechanical strength and dielectric properties for use in the semiconductor manufacturing process can be manufactured .