a method for determining data stored by a memory cell . the memory cell has a select gate coupled to a wordline , a first electrode coupled to a bitline , and a second electrode coupled to a conductor . the method comprises : floating the bitline ; applying a first voltage to the wordline ; applying a second voltage to the conductor such that the bitline is set to a third voltage that is equal to the first voltage minus a threshold voltage of the memory cell ; and sensing the third voltage to determine the data stored by the memory cell .