a solid - state image sensing device having an effective pixel area and an optical black area disposed on one principal surface of a substrate , includes photoelectric converter elements , a wiring part containing a plurality of wiring layers disposed on the one principal surface of the substrate , in which in the optical black area more wiring layers are disposed than in the effective pixel area , an interlayer dielectric disposed between , among the plurality of wiring layers , a topmost first wiring layer and a second wiring layer disposed beneath the first wiring layer , a passivation film disposed on the interlayer dielectric in the effective pixel area and disposed on the first wiring layer in the optical black area , and inner lenses disposed at least at positions on the passivation film that corresponds to the effective pixel area , a thickness of the passivation film being equal to or less than a thickness of the first wiring layer .