structures and methods of converting multi - level cell non - volatile memory into multi - bit information are disclosed . in mlc nvm system , multi - bit information stored in nvm cell is represented by the states of nvm cell threshold voltage levels . in this disclosure , “ p ” states of nvm cell threshold voltage levels are divided into “ n ” groups of threshold voltage levels . each group contains “ m ” states of multiple threshold voltage levels of nvm cells , where p = n × m . the “ m ” states of nvm cell threshold voltage levels in each group are sensed and resolved by applying one correspondent gate voltage to the group . by applying “ n ” multiple gate voltages , the whole “ p ” states of nvm cell threshold voltage levels can be sensed and efficiently converted into storing bits in the mlc nvm cells .