a spin transfer torque magnetic random access memory device includes magnetic tunnel junctions with reduced switching current asymmetry . at least one switching asymmetry balance layer near the free layer of the mtj reduces a first switching current ic causing the value of the first switching current to be nearly equal to the value of a second switching current ic without increasing the average switching current of the device . the sabl may be a non - magnetic switching asymmetry balance layer and / or a magnetic switching asymmetry balance layer .