fig3 illustrates a layout structure 300 of the sram cell shown in fig1 in accordance with one embodiment of the present invention . a first n - type doped region 302 and a second n - type doped region 308 are formed on p - wells in a semiconductor substrate . a first p - type doped region 304 and a second p - type region 306 are formed on the semiconductor substrate . a gate conductive layer 310 is formed above the doped region 302 and across it along its transverse direction . a gate conductive layer 312 is formed above the doped regions 302 and 304 and across them along their transverse directions . similarly , a gate conductive layer 316 is formed above the doped region 308 and across it along its transverse direction . a gate conductive layer 314 is formed above the doped regions 308 and 306 and across them along their traverse directions . the gate conductive layer 310 and the doped region 302 thereunder function as a pass gate transistor pg 1 . the gate conductive layer 312 and the doped regions 302 and 304 thereunder function as a pull - down transistor pd 1 and a pull - up transistor pu 1 , respectively . similarly , the gate conductive layer 316 and the doped region 308 thereunder function as a pass gate transistor pg 2 . the gate conductive layer 314 and the doped regions 308 and 306 thereunder function as a pull - down transistor pd 2 and a pull - up transistor pu 2 , respectively . a contact 316 for the source of the pull - down transistor pd 1 , a contact 322 for the drain of the pass gate transistor pg 1 , and a contact 320 for the source of the pass gate transistor pg 1 are formed on the doped region 302 , and separated by the gate conductive layers 310 and 312 . a contact 324 for the source of the pull - down transistor pd 2 , a contact 326 for the drain of the pass gate transistor pg 2 , and a contact 328 for the source of the pass gate transistor pg 2 are formed on the doped region 308 , and separated by the gate conductive layers 316 and 314 . source contacts 330 and 332 are constructed on the doped regions 304 and 306 , respectively . a contact 334 connects the doped region 306 and the gate conductive layer 312 . a contact 336 connects the doped region 304 and the gate conductive layer 314 . the layout structure 300 has an asymmetric design that helps reduce leakage current between the gate , source and pass gate transistors . the distance between the gate conductive layer 310 and the source contact 320 for the pass gate transistor pg 1 is substantially longer than the distance between the gate conductive layer 310 and the drain contact 322 for the pass gate transistor pg 1 . the distance between the gate conductive layer 316 and the source contact 328 for the pass gate transistor pg 2 is substantially longer than the distance between the gate conductive layer 316 and the drain contact 326 for the pass gate transistor pg 2 . in this embodiment , the distance between the gate conductive layer 310 and the source contact 320 ranges approximately from 100 to 200 percent of the distance between the gate conductive layer 310 and the drain contact 322 . the distance between the gate conductive layer 310 or 316 and the source contact 320 or 328 is substantially the same as the distances between other gate conductive layers and contacts . for example , the distance between the gate conductive layer 314 and the contact 332 and the distance between the gate conductive layer 314 and the contact 324 , are substantially the same as the distance between the gate conductive layer 310 and the contact 322 . as a result , the contacts 322 , 332 and 324 are substantially in alignment , and the gate conductive layers 310 and 314 are substantially misaligned . the longer distance between the gate conductive layer 310 and the source contact 320 allows the layout structure 300 to better withstand process variations , without inducing leakage current . two exemplary layout structures of an sram cell produced by varied processes are described in the following paragraphs . fig4 illustrates a layout structure 400 of an sram cell where the conductive layers 402 , 404 , 406 and 408 shifts upwards due to process variation . due to the asymmetric design , the gate conductive layer 404 and the source contact 410 for the pass gate device pg 2 can still maintain a sufficient distance . thus , the leakage current between the gate conductive layer 404 and the source contact 410 can be reduced . fig5 illustrates a layout structure 500 of an sram cell where the conductive layers 502 , 504 , 506 and 508 shifts downwards due to process variation . due to the asymmetric design , the gate conductive layer 502 and the source contact 510 for the pass gate device pg 1 can still maintain a sufficient distance . thus , the leakage current between the gate conductive layer 502 and the source contact 510 can be reduced . fig6 a through 7b illustrate a number of diagrams comparing the proposed asymmetric layout structure with the conventional symmetric layout structure . referring to fig6 a , nodes 602 , 604 and 606 represent a drain contact , a source contact and a gate conductive layer for a pass gate transistor in an sram cell , respectively , in accordance with the proposed asymmetric layout structure of the present invention . the distance between the nodes 602 and 606 is assumed to be 30 nm and the distance between the nodes 606 and 604 is assumed to be 40 nm . referring to fig6 b , nodes 608 , 610 and 612 represent a drain contact , a source contact and a gate conductive layer for a pass gate transistor in a conventional sram cell , respectively . the distance between the nodes 608 and 612 is assumed to be 30 nm and the distance between the nodes 612 and 610 is also assumed to be 30 nm . referring to fig7 a , due to process variation , the gate conductive layer of the proposed layout structure is shifted to the right by , say , 18 nm . as a result , the distance between the nodes 602 and 606 becomes 48 nm , and the distance between the nodes 606 and 604 becomes 22 nm . referring to fig7 b , due to the same process variation , the gate conductive layer of the conventional layout structure is shifted to the right by 18 nm . as a result , the distance between the nodes 602 and 606 becomes 48 nm , and the distance between the nodes 606 and 604 becomes 12 nm . since distance between the nodes 606 and 604 is longer than the distance between the nodes 612 and 610 , the proposed layout structure can reduce the leakage current between the gate conductive layer and the source contact of the pass gate transistor . the proposed asymmetric layout structure for sram cells can reduce the leakage current between the gate conducive layer and the source contact of the pass gate transistor , thereby reducing the failure rates of the memory devices that fail to meet the minimal power requirement . the increased distance between the gate conducive layer and the source contact of the pass gate transistor does not increase the cell area substantially . for example , if the distance between the gate conducive layer and the source contact of the pass gate transistor is increased by 10 nm , the cell area increases only above 3 . 15 %. thus , the proposed layout structure does not cause a substantial penalty on the cell area . the above illustration provides many different embodiments or embodiments for implementing different features of the invention . specific embodiments of components and processes are described to help clarify the invention . these are , of course , merely embodiments and are not intended to limit the invention from that described in the claims . although the invention is illustrated and described herein as embodied in one or more specific examples , it is nevertheless not intended to be limited to the details shown , since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims . accordingly , it is appropriate that the appended claims be construed broadly and in a manner consistent with the scope of the invention , as set forth in the following claims .