according to fig5 and 6 , the present method of parallel accessing memory cells 3 in an array 2 is based on varying the relative position of the addressed cells for each datum so as to minimize the worst - case current flowing in the selected wordline . in particular , instead of simultaneously accessing cells in the same relative position within the respective datum , the order is reversed , so that , when the nearest cell 3 0 of d 0 ( connected to bitline bl & lt ; 0 & gt ;) is accessed , the farthest cell 3 3 of d 1 ( connected to bitline bl & lt ; 2 n + 1 & gt ;) is accessed , as shown in fig5 . furthermore , when the farthest cell 3 2 of d 0 ( connected to bitline bl & lt ; n − 1 & gt ;) is accessed , the nearest cell 3 1 of d 1 is accessed , as shown in fig6 . in such a case , the voltage on the control terminal of cell 3 0 connected to bitline bl & lt ; 0 & gt ; is again equal to driver voltage vdr . the voltage v 4 on the control terminal of cell 3 3 connected to bitline bl & lt ; 2 n − 1 & gt ; is here due only to the sum of driver voltage vdr and the voltage drop due to the single current iw / β flowing on wordline wl & lt ; 0 & gt ; from bitline bl & lt ; 2 n − 1 & gt ; to the local row decoder 21 , as injected through cell 3 3 . thus : the voltage v 5 on the control terminals of cell 3 2 and 3 3 connected to bitlines bl & lt ; n − 1 & gt ; and bl & lt ; n & gt ; is due to the sum of two currents iw / β which flow along only half of the wordline wl & lt ; 0 & gt ;. thus : v 5 = vdr + ½ r ( 2 iw / β )= vdr + r * iw / β = v 4 & lt ; v 3 , in general , writing the bit associated to bitline bl & lt ; i & gt ; may be performed simultaneously to writing the bit associated to bitline bl & lt ; 2 n − 1 − i & gt ;. in practice , cells arranged symmetrically with respect to a middle point of the wordline are accessed simultaneously . fig8 shows a flow - chart representing the steps usable to write all the bits of two data in a tile according to the above discussed method . during reading , the memory cells 3 are preferably accessed using the same method of selecting symmetrical cells 3 . with such a solution , the worst case voltage on the selected wordline is smaller than with the writing technique of fig3 and 4 . in detail , the voltage reduction dv is : dv = v 3 − v 4 = vdr +( 3 / 2 ) r * iw / β −( vdr + r * iw / β )= ½ r * iw / β for example , if vdr = 0 . 3 v , r = 1000ω , iw = 500 μa and β = 2 , the obtainable voltage reduction dv is 0 . 125 mv . the same solution can be applied to memory devices having two local row decoders , 21 a , 21 b , arranged on either side of the tile 20 , as shown in fig7 . in this situation , the voltages on the control terminals of cells 3 0 and 3 3 are both equal to vdr , and the voltages v 6 on the control terminals of cells 3 2 and 3 1 are : the same technique may be also applied to the writing of three or more data on a same wordline . e . g ., for writing three data d 0 , d 1 and d 2 , when the bit associated to bitline bl & lt ; i & gt ; of d 0 is written , the bits associated to bitlines bl & lt ; 2 n − 1 − i & gt ; of d 1 and bl & lt ; 3 n − 1 − i & gt ; of d 2 may be written simultaneously . in the alternative when the bit associated to bitline bl & lt ; i & gt ; of d 0 is written , the bits associated to bitlines bl & lt ; 2 n − 1 − i & gt ; of d 1 and bl & lt ; 2 n + i & gt ; of d 2 ( or the bits associated to bitlines bl & lt ; n + i & gt ; of d 1 and bl & lt ; 3 n − 1 − i & gt ; of d 2 ) may be written simultaneously , again reducing the maximum voltage drop on the selected wordline . as demonstrated above , the present access method allows a reduction in the current flowing along the selected wordlines , and thus the voltage drop across such wordlines . consequently , the present memory device has a low dissipation . fig9 and 10 show possible ways of addressing different tiles 20 of a phase - change memory device 1 , using the same approach above discussed for the bitlines . here , the local row decoders 21 have not been shown , and a periphery block 25 represents the other circuits necessary for the operation of the phase - change memory device 1 , including the row and column decoders couples of tiles 20 are arranged on a same horizontal line , and several couples of tiles 20 are overlaid to each other . here , each tile 20 may comprise any number of wordlines , with one wordline in each couple of tiles 21 being address at a time . in detail , in fig9 when the couple of tiles 20 which is nearest to the periphery block 25 is accessed , also the couple of tiles 20 which is furthest from periphery block 25 is accessed . when instead the second nearer couple of tiles 20 is accessed , fig1 , the other middle couple of tiles ( third line from the periphery block 25 ) is also accessed . in general if m couples of tiles 20 are provided , when the i - th couple ( in order from the periphery block 25 ) is accessed , also the ( m − i + 1 )- th couple is accessed . thereby , the voltage drop along the bitlines can be reduced when , due to the required power or other reasons , it is not possible to access all the tiles simultaneously . turning to fig1 , a portion of a system 500 in accordance with an embodiment of the present invention is described . system 500 may be used in wireless devices such as , for example , a personal digital assistant ( pda ), a laptop or portable computer with wireless capability , a web tablet , a wireless telephone , a pager , an instant messaging device , a digital music player , a digital camera , or other devices that may be adapted to transmit and / or receive information wirelessly . system 500 may be used in any of the following systems : a wireless local area network ( wlan ) system , a wireless personal area network ( wpan ) system , a cellular network , although the scope of the present invention is not limited in this respect . system 500 includes a controller 510 , an input / output ( i / o ) device 520 ( e . g . a keypad , display ), static random access memory ( sram ) 560 , a memory 530 , and a wireless interface 540 coupled to each other via a bus 550 . a battery 580 is used in some embodiments . it should be noted that the scope of the present invention is not limited to embodiments having any or all of these components . controller 510 comprises , for example , one or more microprocessors , digital signal processors , microcontrollers , or the like . memory 530 may be used to store messages transmitted to or by system 500 . memory 530 may also optionally be used to store instructions that are executed by controller 510 during the operation of system 500 , and may be used to store user data . memory 530 may be provided by one or more different types of memory . for example , memory 530 may comprise any type of random access memory , a volatile memory , a non - volatile memory such as a flash memory and / or a phase change memory including the memory array 1 discussed herein . i / o device 520 may be used by a user to generate a message . system 500 uses wireless interface 540 to transmit and receive messages to and from a wireless communication network with a radio frequency ( rf ) signal . examples of wireless interface 540 may include an antenna or a wireless transceiver , although the scope of the present invention is not limited in this respect . finally , it is clear that numerous variations and modifications may be made to the phase change memory cell and writing process described and illustrated herein , all falling within the scope of the invention as defined in the attached claims . in particular , it is stressed that herein the term “ simultaneously selecting ” is meant to include a situation when a second bitline or a second line of tiles is selected while a first bitline or a first line of tiles is still selected , not being necessary that the selection occurs exactly at the same time .