a description will be given of embodiments according to the present invention with reference to fig1 to 9 . [ 0040 ] 1 uses a yag solid laser etc ., serving as an excitation laser for exciting gasified , liquefied or atomized - gasified light - source material atoms into plasma for light emissions by irradiating a laser beam onto the light - source material . [ 0041 ] 2 is a light - source emitting part that maintains an internal vacuum . 2 a is a light source a of an actual emitting point of an exposure light source . [ 0042 ] 3 is a vacuum chamber that contains an exposure apparatus , and can maintain the vacuum state using a vacuum pump 4 . [ 0043 ] 5 is an exposure light introducing part for introducing exposure light from the light - source emitting part 2 , serving as an illumination optical system for illuminating the original form 6 a using illumination light from the light - source emitting part 2 . the exposure light introducing part includes mirrors a ( or 5 a ) to d ( or 5 d ), and shapes the exposure light for uniform illumination of the original form 6 a . the number of mirrors in the exposure light introducing part ( as an illumination optical system ) is not limited to four , and may be four to eight . mirrors more than eight would decrease the light intensity of the illumination light for illuminating the original form . [ 0044 ] 6 is a reticle stage , and its movable part of its reticle stage is mounted with a reflective original form 6 a that forms a pattern to be exposed . [ 0045 ] 7 is a reduction projection mirror optical system that reduces and projects an exposure pattern reflected from the original form 6 a . the reduction projection mirror optical system includes mirrors a ( or 7 a ) to e ( or e ), and reflects the light from the pattern through these mirrors a to e to reduce and project the pattern formed on the original form onto the wafer at a predefined reduction ratio . 7 f is a mirror barrel that holds the mirrors a to e . the number of mirrors in the exposure light introducing part is not limited to five , and may be four to eight or another number . [ 0046 ] 8 is a position - controlled wafer stage for positioning a wafer 8 a , as a si substrate , into a predetermined exposure position so that the wafer stage can be moved in six - axes directions , i . e ., moved in the xyz directions , tilted around the xy axes , and rotated around the z axis . the pattern on the original form 6 a is to be reflected , reduced and projected onto the wafer 8 a . [ 0047 ] 9 is a reticle stage support for supporting the reticle stage 5 on an apparatus installation floor . 10 is a projection optical system body for supporting the reduction projection mirror optical system 7 on the apparatus installation floor . 11 is a wafer stage support for supporting the wafer stage 8 on the apparatus installation floor . the reticle stage , the reduction projection mirror optical system , and the wafer stage , which are distinctly and independently supported by the reticle stage support , the projection optical system body and the wafer stage support , respectively . they include means ( not shown ) for measuring relative positions to continuously maintain their predetermined configuration . a mount ( not shown ) for violation isolation from the apparatus installation floor is provided on the reticle stage support , the projection system body , and the wafer stage . [ 0049 ] 12 is a reticle stocker that includes a storage container that temporarily stores , in an airtight condition , plural original forms as reticles supplied from the outside to the inside of the apparatus and suitable for different exposure conditions ( such as an illumination condition ) and patterns ( such as a pattern width and an aspect ratio ). [ 0050 ] 13 is a reticle changer for selecting and feeding a reticle from the reticle stocker 12 . [ 0051 ] 14 is a reticle alignment unit that includes a rotatable hand that can travel along the xyz directions and can rotate about the z axis . the reticle alignment unit 14 receives the original form 6 a from the reticle changer 13 , rotates it by 180 °, and feeds it to the reticle alignment scope 15 provided at the end of the reticle stage 6 for fine movements of the original form 6 a rotating about the xyz - axes and aligns the original form 6 a with the alignment mark 15 a provided on the reduction projection mirror optical system 7 . the aligned original form is chucked on the reticle stage 6 . [ 0052 ] 16 is a wafer stocker that includes a storage container for temporarily storing plural wafers 108 a from the outside to the inside of the apparatus . [ 0053 ] 17 is a wafer feed robot for selecting a wafer to be exposed , out of the wafer stocker 16 , and feeds it to a wafer mechanical pre - alignment temperature controller 18 . the wafer mechanical pre - alignment temperature controller 18 roughly adjusts feeding of the wafer in the rotational direction , and controls the wafer temperature within controlled temperature in the exposure apparatus . [ 0055 ] 19 is a wafer feed hand that feeds to the wafer stage 8 the wafer that has been aligned and temperature - controlled by the wafer mechanical pre - alignment temperature controller 18 . [ 0056 ] 20 and 21 are gate valves as a mechanism for opening and closing a gate for supplying the reticle and wafer from the outside of the apparatus . [ 0057 ] 22 is also a gate valve that uses a diaphragm to separates spaces among the wafer stocker 16 , the wafer mechanical pre - alignment temperature controller 18 , and the exposure in the apparatus . the gate valve 22 opens and closes only when feeding the wafer 8 a in and out of the apparatus . such a separation using the diaphragm can minimize a capacity to be temporarily released to the air when the wafer 8 a is fed in from the outside of and fed out of the apparatus , and form a vacuum equilibrium state . [ 0059 ] fig2 is a schematic view of a first embodiment , exemplifying mirrors c ( or 7 c ) and e ( or 7 e ) in the reduction projection mirror optical system 7 . the mirror 7 c includes a mirror holding element 25 d coupled to the mirror barrel , a mirror displacement measuring means 25 f provided on the mirror holding element 25 d , gravity compensation force generating means 25 g and z - thrust generating means 25 j for compensating gravity deformations in a mirror &# 39 ; s vertical direction and positions due to the gravity deformations , and horizontal position compensation thrust generating means 25 h for compensating horizontal positions ( in the xy directions ) of the mirror 7 c . members 25 g , 25 j and 25 h include a lorentz force generating means that includes a drive coil and a magnet . the force applied to the mirror by the gravity compensation force generating means is , but not limited to , one that reduces the amount of deformation due to gravity . depending upon the measurement result of the wave front aberration of the entire optical system that includes the mirror , the force can be one that increases the mirror &# 39 ; s gravity deformation . in other words , it is preferable that the gravity compensation force generating means forces the mirror to deform based on the measurement result of the wave front aberration so that the aberrational amount is smaller than a predetermined permissible value . the mirror 7 e includes the mirror holding element 26 d coupled to the mirror barrel , mirror displacement measuring means 26 f provided on the mirror holding element 26 d , gravity compensation force generating means 26 g and z - thrust generating means 26 j for compensating gravity deformations in the mirror &# 39 ; s vertical direction and positions due to the gravity deformation , and horizontal position compensation thrust generating means 26 h for compensating horizontal positions ( in the xy directions ) of the mirror 7 e . elements 26 g , 26 j and 26 h include a lorentz force generating means that includes a drive coil and a magnet . a description will now be given of the measurement method of an aberrational target value through total reflection mirrors in the projection optical system . while the reticle chuck slider 6 b of the reticle stage 6 ( i . e ., reticle stage slider ) retracts , as shown in fig3 the measurement light supplied from a wave front measurement light source supply optical fiber 23 a ( i . e ., wave front measurement light supply fiber ) is emitted from a wave front measurement light source emission opening 23 . the measurement light is reflected on all the reflective surfaces on the mirrors in the projection optical system , and a wave front measurement light - receiving sensor 24 installed on the wafer stage 8 &# 39 ; s movable part receives the light . the wave front aberration of the projection optical system ( for all the mirrors ) is measured based on the detection result by the wave front measurement light - receiving sensor . next , a wave front measurement value arithmetic circuit 28 calculates the wave front aberration amount based on the wave front measurement value measured by the wave front measurement light - receiving sensor 24 . a mirror gravity compensation and vertical / horizontal compensation correction drive table arithmetic circuit 29 calculates corrective drive directions and drive amounts ( or applied power directions and applied power amounts ) of the mirrors a ( or 7 a ) to e ( or 7 e ) based on the wave front aberration value , and transmits them as target values to the mirror gravity compensation and horizontal / vertical compensation drive means 30 that includes 25 g , 25 j , 25 h , 26 g , 26 j , 26 h , etc . although it is preferable that each of the mirrors a to e includes position measuring , position compensating and forcing means , only some of the mirrors may include them . simultaneously , the mirror system displacement measurement arithmetic circuit 27 collects signals that reflect position information of the mirrors a ( or 7 a ) to e ( or 7 e ) from the mirror displacement measurement means , such as 25 f and 26 f , and measures the mirror positions from the mirror barrel and the relative positions of the mirrors . after the mirror gravity compensation and horizontal / vertical compensation drive means 30 that includes 25 g , 25 j , 25 h , 26 g , 26 j , 26 h , etc . drives each mirror to the target position and relative positions between the mirrors and the mirror barrel are measured , the wave front is measured again . when the wave front aberration is equal to the specification or is below the predetermined amount , the corrections end . however , when the wave front aberration differs from the specification or is greater than the predetermined amount , the wave front measurement arithmetic circuit recalculates the residual wave front aberration amount to repeat the above correction and reduce the wave front aberration down to the target specification . the target wave front aberration amount is one generated in the apparatus when the projection optical system solely adjusts a mirror position initially , and reduces the aberration below the appropriate target amount . a position and shape of each mirror at this time are origins of the mirror position and mirror shape . of course , the target wave front aberration amount may use another value , and the origins for the mirror position and mirror shape may not be those which are obtained at the initial adjustment time . the target value is set only for the wave front aberration amount without introducing a concept of the origins for the mirror position and mirror shape . with respect to the origin of the mirror position , it is possible to reduce the aberration down to the target position by driving the mirror gravity compensation and horizontal / vertical compensation drive means 30 ( or mirror drive means ). a description will be given of the second embodiment with reference to fig4 . while the first embodiment uses the lorentz force for the gravity compensation force generating means , a method that uses a permanent magnet to apply a suction force is also applicable in addition to the lorentz force . the second embodiment is different from the first embodiment in using the permanent magnet . the gravity compensation force generating means 25 k and 26 k have a magnet and use this magnet to generate a force onto a mirror in a direction opposing the gravity force along an approximately central axis of the mirror . the cancellation between the magnet &# 39 ; s magnetic force and the mirror &# 39 ; s gravity can compensate ( and reduce ) the mirror &# 39 ; s deformation due to its own weight . in the gravity compensation that uses the permanent magnet as in the second embodiment , the magnet suction force is controlled by a gap adjustment unit ( not shown ) between the magnets ( i . e ., between the magnet attached to the mirror and the magnet attached to the mirror barrel or the magnet attached to the mirror holding element coupled to the mirror barrel ). a description will be given of the third embodiment with reference to fig5 . the gravity compensation force generating means can use a method that employs a permanent magnet to apply a suction force instead of the lorentz force . the third embodiment enables the gravity compensation force generating means 25 l and 26 l to use the electrostatic suction force to compensate ( and reduce ) the mirror &# 39 ; s deformation due to its own weight . this embodiment generates an electrostatic suction force in a direction opposing the gravity force along the approximately central axis of the mirror . the cancellation between the electrostatic suction force and the mirror &# 39 ; s gravity can reduce the mirror &# 39 ; s deformation amount due to its own weight . in compensating the mirror &# 39 ; s deformation due to its own weight using the electrostatic suction force as shown in the third embodiment , the applied potential should be controlled , for example , by an electrostatic chuck . a description will be given of the fourth embodiment with reference to fig6 . the first embodiment uses both the gravity compensation force generating means and the xyz position compensating means to hold and control positions of the mirrors in a non - contact manner . on the other hand , the fourth embodiment ( shown in fig6 ) compensates for only the gravity without the xyz positioning control . this embodiment configures the mirror displacement measurement means 25 f and the gravity compensation force generating means 25 m as in the first embodiment , and fixes the mirror c ( or 7 c ) onto the mirror holding element 25 d without the position displacement means etc . similarly , the mirror displacement measuring means 26 f and gravity compensation force generating means 26 m have structures similar to those in the first embodiment , and the mirror e ( or 7 e ) is fixed onto the mirror holding element 26 d without the position displacement means etc . thus , the mirror that includes only the gravity compensation means is used for one having a relatively low final correction precision or a relatively low position precision and surface shape precision . however , in precisely adjusting a distribution of the gravity compensation force on the mirror surface , fine adjustments of the mirror &# 39 ; s surface shapes and precise gravity compensations ( i . e ., precise compensations of the deformed mirror surface due to its own weight ) are available by properly dispersing plural gravity compensation force generating means 25 n on the mirror &# 39 ; s rear surface , as shown in fig7 . [ 0082 ] fig8 is a flowchart showing a workflow in the fourth embodiment . while the reticle chuck slider 6 b of the reticle stage 6 ( i . e ., reticle stage slider ) retracts , as illustrated , the measurement light supplied from a wave front measurement light source supply optical fiber 23 a is emitted from the wave front measurement light source emission opening 23 . the measurement light is reflected on the entire reflective surfaces on the mirror in the projection optical system , and the wave front aberration of the projection optical system ( for all the mirrors ) is measured based on the detection result by the wave front measurement light - receiving sensor 24 installed on the wafer stage 8 &# 39 ; s movable part receives the light . next , a wave front measurement value arithmetic circuit 28 calculates the wave front aberration amount based on the wave front measurement value measured by the wave front measurement light - receiving sensor 24 . a mirror gravity compensation correction drive table arithmetic circuit 31 calculates corrective drive directions , drive amounts and applied power amounts of mirrors a ( or 7 a ) to e ( or 7 e ) based on the wave front aberration amount ( or wave front measurement operation value ), and transmits them as target values to the mirror gravity compensation drive means 32 that includes 25 n , 26 n , etc . simultaneously , the mirror system displacement measurement arithmetic circuit 27 collects signals that reflect position information of the mirrors a ( or 7 a ) to e ( 7 e ) from the mirror displacement measurement means 25 f and 26 f , and measures the mirror positions from the mirror barrel and the relative positions among the mirrors . after the mirror gravity compensation drive means 30 that includes 25 n , 26 n , etc . drives each mirror to the target position , the wave front is measured again . when the wave front aberration meets the specification or is below the predetermined amount , the correction ends . however , when the wave front aberration diverts from the specification or is greater than the predetermined amount , the wave front measurement arithmetic circuit recalculates the residual wave front aberration amount to repeat the above correction and reduce the wave front aberration down to the target specification . the target wave front aberration amount is one generated in the apparatus when the projection optical system solely adjusts a mirror position initially , and reduces the aberration below the appropriate target amount . a position and shape of each mirror at this time are origins of the mirror position and mirror shape . of course , the target wave front aberration amount may use another value , and the origins for the mirror position and mirror shape may not be those which are obtained at the initial adjustment time . the target value is set only for the wave front aberration amount without introducing a concept of the origins for the mirror position and mirror shape . with respect to the origin of the mirror position , it is possible to reduce the aberration down to the target position by driving the mirror using the mirror gravity compensation drive means 30 having 25 n , 26 n , etc . a description will be given of the fifth embodiment with reference to fig9 . this embodiment has approximately the same structure as that of the fourth embodiment , but is different in using a permanent magnet , electrostatic force or the like for the gravity compensation force generating means 25 p and 26 p , as in the second and third embodiments . other than that , this embodiment is approximately similar to the fourth embodiment . while the first to fifth embodiments have been thus described , the present invention is not limited to these embodiments . for example , the mirror to be forced or displaced is not limited to the mirrors c and e , but may be any mirrors a to e . the number of mirrors is not limited to six . in addition , the mirror to be forced or displaced is not limited to one in the projection optical system , but can also be one in the illumination optical system . the instant embodiments address the wave front aberration , and force or displace the mirror based on the wave front aberration . however , the mirror may be forced or displaced based on another reference value , such as other aberration and specific mirror &# 39 ; s deformation amount , rather than a detection result of the wave front aberration . referring to fig1 and 13 , a description will now be given of an embodiment of a device fabricating method using the above exposure apparatus . fig1 is a flowchart for explaining a fabrication of devices ( i . e ., semiconductor chips such as ic and lsi , lcds , ccds , etc .). here , a description will be given of a fabrication of a semiconductor chip as an example . step 1 ( circuit design ) designs a semiconductor device circuit . step 2 ( mask fabrication ) forms a mask having a designed circuit pattern . step 3 ( wafer making ) manufactures a wafer using materials such as silicon . step 4 ( wafer process ), which is referred to as a pretreatment , forms actual circuitry on the wafer through photolithography using the mask and wafer . step 5 ( assembly ), which is also referred to as a post - treatment , transforms the wafer formed in step 4 into a semiconductor chip and includes an assembly step ( e . g ., dicing , bonding ), a packaging step ( chip sealing ), and the like . step 6 ( inspection ) performs various tests for the semiconductor device made in step 5 , such as a validity test and a durability test . through these steps , a semiconductor device is finished and shipped ( step 7 ). [ 0093 ] fig1 is a detailed flowchart of the wafer process in step 4 . step 11 ( oxidation ) oxidizes the wafer &# 39 ; s surface . step 12 ( cvd ) forms an insulating film on the wafer &# 39 ; s surface . step 13 ( electrode formation ) forms electrodes on the wafer by vapor disposition and the like . step 14 ( ion implantation ) implants ions into the wafer . step 15 ( resist process ) applies a photosensitive material onto the wafer . step 16 ( exposure ) uses the exposure apparatus to expose a circuit pattern on the mask onto the wafer . step 17 ( development ) develops the exposed wafer . step 18 ( etching ) etches parts other than a developed resist image . step 19 ( resist stripping ) removes disused resist after etching . these steps are repeated , and multilayer circuit patterns are formed on the wafer . the device fabrication method of this embodiment may manufacture higher quality devices than the conventional one . thus , the device fabrication method using the exposure apparatus , and the devices as finished goods also constitute one aspect of the present invention . according to the instant embodiment , the exposure apparatus can correct fine displacements and inclinations of the rotational axis in the in - plane translation shift direction and vertical direction , mirror &# 39 ; s deformations due to its own weight , and wave front aberration in the projection optical system mirrors , preventing the mirror surface precision , the optical aberration , and deteriorated imaging performance and lowered light intensity in the projection optical system .