in a preferred embodiment of the present invention there is provided a new way to protect silicon against unwanted galvanic etching . although the invention is applicable to different etching solutions , it will hereinafter be described with respect to an hf etch solution only . as mentioned previously , the formation of a galvanic cell in a hf solution is illustrated in fig1 using silicon and gold as the anode and cathode , respectively . fig1 shows the variation of current ( log i ) with voltage ( v ). the corrosion potential between silicon n + and gold is shown as the point of intersection of the two curves representing the si n + current ( curve 1 , anode side ) and the gold current ( curve 2 , cathode side ) the protection is achieved based on a cathodic protection of the silicon with a sacrificial layer forming an integrated anodic electrode . by the deposition of a sacrificial layer having a lower redox potential than silicon and being electrically connected to the noble metal used , the corrosion potential is shifted to a voltage where the silicon current corrosion is negligible . this effect is illustrated in fig2 , which shows the formation of a galvanic cell in a hf solution using aluminum and gold as the anode and cathode , respectively . in contrast to the galvanic cell of fig1 , an additional aluminum pad has been connected as an integrated anodic electrode . the corrosion is defined by the intersection of the two curves representing the aluminum corrosion current ( curve 3 , anode side ) and the gold current ( curve 4 , cathode side ). the corrosion potential is fixed by the al — au cell and at this potential the silicon corrosion current is low . as can be seen from fig2 , the silicon corrosion current is drastically reduced by shifting the corrosion potential to higher values of log i . it will be appreciated that “ si n + galvanic current ” in fig1 and “ si n + corrosion current ” in fig2 refer to the same . al is a preferred material for shifting the corrosion potential because it has a relatively low redox potential . however , other materials , such as cr , zn , and mg may also be employed . in general , to protect a material a which is electrically connected to a material b ( where the redox potential of a is less than b ) against corrosion while deep in a solution ( electrolyte ), a material c having a lower redox potential than a should be attached to b . the materials with the lower and higher redox potential define the corrosion potential and from this potential the corrosion current of all other materials connected to them . this is why the silicon corrosion current reduced when the respective corrosion potential is shifted to higher values of log i . this cathodic protection by applying a sacrificial layer of a metal acting as an integrated anodic electrode has the advantage that there is no need to embed or otherwise encapsulate the structure to protect it against hf solution attack and that no additional wiring is needed . the only thing that needs to be done is adding a pad layer or film of a sacrificial material to the structure . the sacrificial material can be either placed on a side of the structure to be protected and then connected to the noble metal , or it can be applied on top of the structure , thus saving space . the sacrificial pad should have an large enough area in contact with the etching solution , in order that its efficiency is not limited by the maximum current density at the etching solution / sacrifical pad interface . once the etch is done , there remains a part of the sacrificial material layer which can be etched away using an appropriate etch solution or can be left as it is . however , in the last case , the remaining sacrificial layer , should not shortcut functional electrical connection . for that purpose , the sacrificial film should be structured so as to avoid shortcut . for example , the sacrificial layer can be deposited just after the deposition of the noble metal layer and structured at the same time . fig3 and 4 show the application of the present invention to the manufacture of a cantilever / tip structure 6 for use in magnetic storage technology . here , gold wiring 8 is connected to the highly doped silicon cantilever 10 , and , at the end of the manufacturing process , a final hf - based etch is needed to remove all the silicon oxide protection present , in particular the highly doped part . in fig3 , no additional sacrificial aluminum pad has been added and it can be seen that after the hf etch , the silicon cantilever 10 is corroded , whereas fig4 shows that , when using an additional aluminum layer 12 connected to the gold wiring 8 , no visible corrosion occurs . in an example of the present invention herein before described , a sacrificial aluminum layer is applied to act as an integrated anodic electrode . however , it will be appreciated that the present invention can be used universally as a complementary tool in integrated system fabrication as a protection against undesired galvanic etching . different types of galvanic cells may be formed with different material and etch solutions . the present invention is especially although by no means exclusively attractive for use in mems applications because it overcomes the difficulties associated with the conventional protection techniques as explained above . the present invention is also applicable to cmos applications where industry trends towards copper wiring ( which has a high oxidoreduction potential ) and silicon on insulator wafer ( where basically the transistors are completely isolated ) incur galvanic wet etching problems . the present invention is also desirable where mems devices are integrated with microelectronic circuits , such as in emerging rf mechanical filter designs . the present invention is attractive for porous silicon applications because it adds more flexibility to the fabrication of porous and non porous zones independent of the silicon doping type and concentration .