embodiments of the present invention will be explained with reference to the accompanying drawings hereinafter . fig1 a to 1 l are sectional views showing a method of manufacturing a substrate with through electrodes according to a first embodiment of the present invention in sequence . in the method of manufacturing the substrate with through electrodes in the first embodiment , as shown in fig1 a , first a temporal substrate 10 is prepared , and a peelable layer 12 is formed on the temporal substrate 10 . as the temporal substrate 10 , a semiconductor substrate ( a silicon wafer , a silicon chip , or the like ) is used preferably . as the peelable layer 12 , a heat peeled tape having such a characteristic that can be pasted onto a seed metal layer formed on the temporal substrate 10 and the peelable layer 12 at an ordinary temperature but can be peeled from an interface of the seed metal layer by applying heat is used preferably . then , as shown in fig1 b , a seed metal layer 14 is formed on the peelable layer 12 . as the seed metal layer 14 , a metallic foil made of copper ( cu ), or the like is used preferably , and pasted onto the peelable layer 12 . then , as shown in fig1 c , a resist film 16 is formed on the seed metal layer 14 . as the method of forming the resist film 16 , a resist coating liquid may be formed by the spin coating , or the like , or a dry film resist may be pasted . then , as shown in fig1 d , opening portions 16 x are formed in the resist film 16 by exposing / developing the resist film 16 . then , as shown in fig1 e , metal posts 18 a made of cu , or the like are formed in the opening portions 16 x in the resist film 16 by the electroplating utilizing the seed metal layer 14 as the plating power - supply layer . then , the resist film 16 is removed by the remover or the dry ashing . thus , as shown in fig1 f , the metal posts 18 a provided to stand upright on the seed metal layer 14 formed on the temporal substrate 10 are exposed . the metal posts 18 a act later as the through electrodes that are provided to pass through the semiconductor substrate . in the case where a variation in heights of the metal posts 18 a become a problem , top portions of the metal posts 18 a may be polished by the cmp , or the like after the step in fig1 e ( before the resist film 16 is removed ). thus , a variation in heights can be reduced by leveling the metal posts 18 a . in this case , since no semiconductor element is formed on the temporal substrate 10 , there is no possibility that such polishing causes damage on the semiconductor elements . then , as shown in fig1 g , a semiconductor substrate 20 ( a silicon wafer , a silicon chip , or the like whose thickness is 200 μm or less , for example ) in which through holes 20 x are formed is prepared as a normal substrate in which the through electrodes are formed . then , an insulating layer 22 formed of a silicon oxide layer is formed on both surfaces of the semiconductor substrate 20 and inner surfaces of the through holes 20 x by thermally oxidizing the semiconductor substrate 20 . the through holes 20 x in the semiconductor substrate 20 are formed by the dry etching ( rie , or the like ) using the resist film as a mask , in which opening portions are provided on the semiconductor substrate 20 . also , the through holes 20 x in the semiconductor substrate 20 are formed in positions that correspond to the metal posts 18 a formed on the temporal substrate 10 . the semiconductor substrate 20 may be formed of an element substrate on which the semiconductor elements , etc . are formed or a simple substrate on which no semiconductor element is formed . then , as also shown in fig1 g , the semiconductor substrate 20 is positioned over the temporal substrate 10 in a condition that the through holes 20 x in the semiconductor substrate 20 are aligned to correspond to the metal posts 18 a formed on the temporal substrate 10 . thus , as shown in fig1 h , the metal posts 18 a are inserted into the through holes 20 x in the semiconductor substrate 20 . at this time , because a thickness of the semiconductor substrate 20 is set thinner than the height of the metal posts 18 a , the metal posts 18 a are inserted into the through holes 20 x in the semiconductor substrate 20 to have projection portions 18 b that are projected from the upper surface of the semiconductor substrate 20 . then , as shown in fig1 i , a resultant structure in fig1 h is placed on a lower die 24 b , and then the projection portions 18 b of the metal posts 18 a projected from the upper surface of the semiconductor substrate 20 are crashed by pressing the resultant structure by means of an upper die 24 a . thus , as shown in fig1 j , the projection portions 18 b of the metal posts 18 a are extended in the lateral direction , and thus upper connection portions 18 x are formed . in addition , since the metal posts 18 a in the through holes 20 x in the semiconductor substrate 20 are extended in the lateral direction , clearances between the through holes 20 x and the metal posts 18 a are filled , whereby the metal posts 18 a are fixed in the through holes 20 x in the semiconductor substrate 20 . then , as shown in fig1 k , the temporal substrate 10 is peeled along an interface between the peelable layer 12 and the seed metal layer 14 by annealing the resultant structure at a temperature of 100 to 200 ° c . then , the temporal substrate 10 onto which the peelable layer 12 is pasted is abandoned . then , as shown in fig1 l , the seed metal layer 14 is removed selectively from a resultant structure in fig1 k . this seed metal layer 14 is removed by the wet etching or the polishing . in this fashion , the metal posts 18 a formed on the temporal substrate 10 act as through electrodes 18 provided in the through holes 20 x in the semiconductor substrate 20 , and also lower connection portions 18 y are exposed on bottom portions of the through electrodes 18 . accordingly , a substrate 1 with through electrodes of the present embodiment can be obtained . in the above embodiment , the seed metal layer 14 is removed . but wiring patterns connected to the through electrodes 18 may be formed on the lower surface of the semiconductor substrate 20 as the lower connection portions , by patterning the seed metal layer 14 by means of the photolithography and the etching . as explained above , according to the method of manufacturing the substrate with through electrodes of the present embodiment , first the peelable layer 12 and the seed metal layer 14 are formed on the temporal substrate 10 , and then the resist film 16 in which the opening portions 16 x are provided in predetermined portions is formed on the seed metal layer 14 . then , the metal posts 18 a are formed in the opening portions 16 x in the resist film 16 by the electroplating using the seed metal layer 14 as the plating power - supply layer , and then the resist film 16 is removed . then , the semiconductor substrate 20 in which the through holes 20 x are provided in the portions corresponding to the metal posts 18 a and an overall surface of which is covered with the insulating layer 22 is prepared . then , the semiconductor substrate 20 is arranged over the temporal substrate 10 , and then the metal posts 18 a are inserted into the through holes 20 x in the semiconductor substrate 20 . then , the projection portions 18 b of the metal posts 18 a projected from the upper surface of the semiconductor substrate 20 are crashed by the press , so that the upper connection portions 18 x are formed and simultaneously the metal posts 18 a are fixed in the metal posts 18 a . then , the temporal substrate 10 is peeled along an interface between the peelable layer 12 and the seed metal layer 14 , then the temporal substrate 10 on which the peelable layer 12 is pasted is abandoned , and then the seed metal layer 14 is removed . accordingly , the bottom surfaces of the metal posts 18 a are exposed , and the metal posts 18 a constitute the through electrodes 18 that pass through the semiconductor substrate 20 . then , the upper and lower sides of the through electrodes 18 constitute the upper connection portions 18 x and the lower connection portions 18 y respectively . in this manner , the through electrodes 18 that can connect electrically the upper and lower sides of the semiconductor substrate 20 are formed in the through holes 20 x in the semiconductor substrate 20 . a plurality of through electrodes 18 are insulated electrically by the insulating layer 22 that is formed on both surfaces of the semiconductor substrate 20 and the inner surfaces of the through holes 20 x . in this way , in the present embodiment , the metal posts 18 a are formed by the electroplating using the seed metal layer 14 formed on the temporal substrate 10 as the plating power - supply layer . therefore , there is no need to form the seed metal layer on the semiconductor substrate 20 , into which the through electrodes 18 are inserted , by the cvd including the annealing , and thus the semiconductor substrate 20 can be maintained at a room temperature . as a result , there is no possibility that a warp of the thin semiconductor substrate 20 is generated . in addition , even when the semiconductor elements are formed on the semiconductor substrate 20 , the annealing is not applied to the semiconductor substrate 20 . as a result , there is no possibility that the semiconductor elements are damaged . further , even when a variation in heights of the metal posts 18 a is reduced by leveling the metal posts 18 a after the step in fig1 h , the semiconductor elements are not formed on the temporal substrate 10 . therefore , it is not possible that the semiconductor elements are damaged , and various leveling methods can be employed . besides , the step of forming the metal posts 18 a in the opening portions 16 x of the resist film 16 by the electroplating needs a relatively long time . in this case , if the metal posts 18 a are formed previously on the temporal substrate 10 , a time and labor required to form the through electrodes 18 in the semiconductor substrate 20 can be shortened , and also a reduction of an delivery date of a product can be achieved . in fig2 , an example in which the substrate 1 with through electrodes of the first embodiment of the present invention is applied to an interposer that aligns the semiconductor chip with the circuit substrate is shown . as shown in fig2 , in a circuit substrate 30 , via posts 38 are provided in a resin substrate 32 to pass through , and wiring patterns 34 formed on an upper surface of the resin substrate 32 are connected to external connection terminals 36 , which are formed on the lower surface side of the resin substrate 32 , via the via posts 38 . then , the lower connection portions 18 y of the through electrodes 18 of the substrate 1 with through electrodes of the present embodiment are connected to the wiring patterns 34 of the circuit substrate 30 via bumps 42 a . then , a semiconductor chip 40 is connected to the upper connection portions 18 x of the through electrodes 18 of the substrate 1 with through electrodes via bumps 42 b . in this manner , the substrate 1 with through electrodes of the present embodiment is arranged between the circuit substrate 30 and the semiconductor chip 40 ( cpu , or the like ), and the terminals of the semiconductor chip 40 are connected electrically to the terminals of the circuit substrate 30 with alignment or grid conversion . also , as shown in fig3 , as the substrate with through electrodes of the present invention , a semiconductor element substrate 1 a with through electrodes ( semiconductor chip , or the like ) on which the semiconductor elements , and the like are formed may be employed . more particularly , a plurality of semiconductor element substrates 1 a with through electrodes of the present embodiment are stacked three - dimensionally and packaged onto the similar circuit substrate 30 to that in fig2 , and the through electrodes 18 are connected to the wiring patterns 34 of the circuit substrate 30 respectively in a condition that such through electrodes 18 are connected mutually via bumps 42 . then , a plurality of semiconductor element substrates 1 a with through electrodes are sealed with a sealing resin 44 . if doing so , wiring lengths between a plurality of semiconductor element substrates can be shortened . therefore , the present embodiment can deal with an increase in an operating frequency and also the chip laminated type module responding to the high density packaging can be manufactured at a low cost with a high yield . fig4 a to 4 f are sectional views showing a method of manufacturing a substrate with through electrodes according to a second embodiment of the present invention . in the second embodiment , such a mode is shown that the substrate with through electrodes of the present invention is applied to the mems ( micro electro mechanical systems ) device packaging substrate ( silicon cap ). in the method of manufacturing the substrate with through electrodes of the second embodiment , as shown in fig4 a , first the peelable layer 12 and the seed metal layer 14 are formed on the temporal substrate 10 by the same method as the first embodiment , and the metal posts 18 a which stand upright are formed on the seed metal layer 14 . then , as shown in fig4 b , the semiconductor substrate 20 in which the through holes 20 x are provided is prepared , and then the insulating layer 22 is formed on both surfaces of the semiconductor substrate 20 and inner surfaces of the through holes 20 x . in the second embodiment , a substrate having such a structure that a projection portion 20 a is formed on a peripheral portion of the substrate by providing a recess portion 20 b in a major center portion is used as the semiconductor substrate 20 . then , as also shown in fig4 b , the semiconductor substrate 20 is positioned over the temporal substrate 10 to direct upwardly its surface on which the projection portion 20 a of the semiconductor substrate 20 is provided in a condition that the through holes 20 x in the semiconductor substrate 20 are aligned with the metal posts 18 a on the temporal substrate 10 . thus , as shown in fig4 c , the metal posts 18 a on the temporal substrate 10 are inserted into the through holes 20 x in the semiconductor substrate 20 to have the projection portions 18 b . then , as shown in fig4 d , like the first embodiment , the resultant structure in fig4 c is put between the upper die 24 a and the lower die 24 b and pressed ( pressurized ). thus , as shown in fig4 e , the projection portions 18 b of the metal posts 18 a projected from the upper surface of the semiconductor substrate 20 are crashed , so that the upper connection portions 18 x are formed and at the same time the metal posts 18 a are fixed in the through holes 20 x in the semiconductor substrate 20 . then , as shown in fig4 f , like the first embodiment , the temporal substrate 10 on which the peelable layer 12 is pasted is abandoned by peeling the temporal substrate 10 along an interface between the peelable layer 12 and the seed metal layer 14 . then , the seed metal layer 14 on the lower surface of the semiconductor substrate 20 is patterned by the photolithography and the etching . accordingly , the metal posts 18 a are shaped into the through electrodes 18 and also the lower connection portions 18 y connected to the through electrodes 18 are formed under the through electrodes 18 . with the above , a substrate 1 b with through electrodes according to the second embodiment can be obtained . in the substrate 1 b with through electrodes of the second embodiment , as shown in fig5 , external connection terminals 52 are provided to the lower connection portions 18 y of the through electrodes 18 . then , a mems device 50 ( acceleration sensor ) having a movable portion 56 is prepared , and connection portions ( not shown ) of the mems device 50 are connected to the upper connection portions 18 x of the through electrodes 18 via bumps 54 . the mems device 50 can be manufactured by the micromachining technology , and also a pressure sensor , a switch , or the like may be employed in addition to the acceleration sensor . in this way , the movable portion 56 of the mems device 50 is fit in the recess portion 20 b ( cavity ) of the substrate 1 a with through electrodes in packaging . according to the method of manufacturing the substrate with through electrodes of the second embodiment , the advantages similar to the first embodiment can be achieved and also the packaging substrate ( silicon cap ) for the mems device having the movable portion can be easily manufactured . fig6 is a sectional view showing a method of forming metal posts in the method of manufacturing a substrate with through electrodes according to other embodiment of the present invention . in the foregoing first and second embodiments , the metal posts 18 a are formed on the seed metal layer 14 on the temporal substrate 10 by the electroplating . in this case , as shown in fig6 , ball bumps 19 may be formed on the seed metal layer 14 on the temporal substrate 10 by the wire bonding method . in other words , a metal wire made of gold , or the like is pulled out from a capillary of a wire bonder by a predetermined length , then a top end portion of this metal wire is rounded into a spherical shape by the discharge , then the spherical top end portion of the metal wire is brought into contact with the seed metal layer 14 by bringing down the capillary , and then such top end portion is bonded to the seed metal layer 14 by applying the heat and the ultrasonic vibration . then , the metal wire is torn off by fixing the metal wire by a clamper , while pulling up the capillary . the ball bumps 19 shown in fig6 are formed by carrying out these steps plural times . since later steps are similar to those in the first and second embodiments , their explanation will be omitted herein .