us patent publication no . 2010 / 0019869 offers to form , in the vibrating element , columns in a material having a young modulus temperature coefficient opposite to that of the material in which the vibrating element is formed . this solution does not allow process corners to be corrected on a same wafer . fig2 a shows a micro - machined vibrating element 11 in the shape of a beam , maintained along two opposite edges by anchor areas 12 , 13 formed on a support sb . the element 11 may vibrate in a direction perpendicular to the plane thereof . fig2 b shows a curve c 1 of the stress to which is subjected the element 11 when it is subjected to a vibration at its resonance frequency . the stress curve c 1 has maximum values m 1 , m 2 near fixed points ( anchor areas 12 , 13 ) of the element 11 , followed by minimum values m 1 , m 2 when going toward the center of the element 11 . the minimum values m 1 , m 2 are separated by a central area i 1 corresponding to an average stress value . it has been observed that by arranging a patch on one or more regions of a face of the vibrating element , chosen according to the stress to which these regions are subjected , it is possible to increase or decrease the resonance frequency of the vibrating element . thus , if a region subjected to a minimum stress is covered by a patch , the mass and stiffness of the vibrating element increase . as stiffness is modified in a low stress region , the modification has little effect on the resonance frequency . therefore the result of the equation ( 1 ) is that the resonance frequency of the vibrating element decreases . on the other hand , if a region of the vibrating element subjected to high stress is covered by a patch , the resulting increase of stiffness of the vibrating element in these regions is going to affect the resonance frequency more that the resulting mass increase . according to the equation ( 1 ), the resonance frequency of the vibrating element is therefore going to increase . the resonance frequency variations thus obtained also depend on the thickness of each patch added and on the material of which it is made . thus , the bigger the thickness of each patch is , the more significant the resonance frequency correction . fig3 a to 6b show the vibrating element 11 comprising one or two patchs arranged on the upper face thereof , according to various embodiments . in fig3 a , 3 b , the patchs p 1 , p 2 are arranged near the anchor areas 12 , 13 . thus , according to the curve c 1 , the patchs p 1 , p 2 cover regions subjected to maximum stress ( m 1 , m 2 ). the result is that the resonance frequency of the element 11 is increased in relation to a same vibrating element not comprising the patchs p 1 , p 2 . in fig4 a , 4 b , a patch p 3 is arranged near the center of the element 11 , i . e ., on a region subjected to an average stress value corresponding to the region i 1 of the curve c 1 . the result is that the resonance frequency of the element 11 is increased in relation to a same vibrating element not comprising the patch p 3 . in fig5 a , 5 b , the patchs p 4 , p 5 are arranged near regions subjected to minimum stress ( areas m 1 , m 2 of the curve c 1 ). the resonance frequency of the element 11 is then decreased in relation to a same vibrating element not comprising the patchs p 1 , p 2 . this phenomenon is due to an increase of the mass of the element 11 without modifying its stiffness coefficient k in the stressed regions . in fig6 a , 6 b , a layer p 6 covers all the upper face of the vibrating element 11 . according to the curve c 1 , the vibrating element 11 has a stressed surface larger than its not stressed surface . the result is that the layer p 6 will tend to increase the resonance frequency of the element 11 . it may therefore be chosen to increase or decrease the resonance frequency of the element 11 using , for example , a same material . the patchs p 1 , p 2 , p 3 , p 4 , p 5 , p 6 may extend across the width of the element 11 , as shown in fig3 a , 4 a , 5 a , 6 a , or only on a part of the width , for example centered on a longitudinal center line of the element 11 . the patchs may be made of various materials such as si , cr , sio 2 , si 3 n 4 , au , or any other suitable material , which may be chosen according to their densities and mechanical properties , in particular their young moduli . fig7 shows variation curves of the resonance frequency fr of a vibrating element in the shape of a beam , such as that shown in fig2 a , maintained along two opposite edges . the resonance frequency of the vibrating element is modified by forming a perforation in the vibrating element according to an axis perpendicular to the plane thereof . the curves of fig7 are obtained by varying the position hp of the perforation along the vibrating element from a fixed point , for different radius values hr of the perforation . the numerical values shown in fig7 correspond to a vibrating element made of silicon 50 μm long , 20 μm wide and 1 . 4 μm thick . in these conditions , the resonance frequency of the vibrating element is of 4 . 95122 mhz . when the position of the perforation varies along the vibrating element , the resonance frequency has minimum values m 3 , m 4 when the perforation is near the fixed edges of the vibrating element , maximum values m 3 , m 4 near the regions m 1 , m 2 ( fig2 a , 2 b ) and an intermediate local minimum value 12 between the values m 3 , m 4 and corresponding to the region i 1 . the maximum values m 3 , m 4 are slightly higher ( around 1 , 000 ppm or 0 . 1 %) than the resonance frequency of the vibrating element without perforation . the result is that the resonance frequency of the vibrating element may be increased or decreased according to the region of the vibrating element where the perforation is made . the curves of fig7 are inverted ( the values m 3 , m 4 become minimum values , and the values m 3 , m 4 and 12 become maximum values ) if , instead of forming a perforation , matter is added by forming a patch on the vibrating element . the differences in resonance frequency , in relation to a rated frequency , exhibited by vibrating elements formed on a same silicon wafer are usually within a range from approximately − 1 , 000 to approximately + 1 , 000 ppm , and depend on the shape and dimensions of the vibrating element . such differences appear to be totally compatible with the correction possibilities offered by arranging one or more patchs in determined regions of the vibrating element . thus , fig8 shows variation curves of the resonance frequency fr as a function of the width w , for various thicknesses t of a patch ( p 4 or p 5 ) arranged on one of the regions m 1 , m 2 of a vibrating element ( fig5 a , 5 b ) having features similar to those subject of the curves of fig7 . the curves of fig8 show that the resonance frequency of the vibrating element may be decreased using one or two patchs arranged on the regions m 1 , m 2 of the vibrating element and having a width lower than around 6 μm , and increased if these same patchs have a width higher than 6 μm . fig9 shows variation curves of the resonance frequency fr as a function of the width w of a patch , when this patch has a thickness of 20 nm and is formed on one of the regions m 1 , m 2 , in various materials such as silicon ( si ), silicon oxide ( sio 2 ), silicon nitride ( si 3 n 4 ) and chromium ( cr ). the curves of fig9 show that if a significant correction ( around 2 , 000 ppm ) for decreasing the resonance frequency is necessary , chromium may be used as the material constituting the patchs . fig1 a , 10 b show variation curves of the resonance frequency fr of vibrating elements , as a function of the width w of a patch 30 nm thick ( chosen for example according to fig8 ), arranged on the region m 1 and / or m 2 of the vibrating element . the curves of fig1 a and 10b may be those of two vibrating elements formed on a same semiconductor wafer . in fig1 a , the vibrating element has a resonance frequency of around 4 . 9492 mhz ( at w = 0 ) instead of a setpoint resonance frequency fc of 4 . 95122 mhz . the frequency correction to be made is therefore of around + 2 khz , i . e ., around + 400 ppm . according to the curve of fig1 a , the frequency fc may be reached with a patch of 6 . 902 μm . in fig1 b , the vibrating element has a resonance frequency of around 4 . 9522 mhz instead of the setpoint resonance frequency fc at 4 . 95122 mhz . the frequency correction to be made is therefore of around − 1 khz , i . e ., around − 200 ppm . according to the curve of fig1 b , the setpoint frequency may be reached with a patch of 0 . 883 μm . the resolution of the resonance frequency correction of a vibrating element may thus reach 5 ppm with the current photolithography techniques . fig1 a , 11 b show a vibrating element 21 in the shape of a disc linked to a support fixed by four arms 24 which may for example be uniformly distributed at the periphery of the disc . fig1 b is a section view along an axis x or y . the arms are linked to anchor areas 22 . electrodes 23 are formed facing the periphery of the disc between the arms 24 and the anchor areas 22 . fig1 c shows curves c 2 , c 3 of the stress of the vibrating element 21 subjected to a vibration according to a volume mode called “ elliptic ” or “ wine glass ”, at the resonance frequency of the element 21 . the curve c 2 corresponds to the stress to which is subjected the element 21 along the axis x , and the curve c 3 , to the stress to which is subjected the element 21 along the axis y , during an oscillation . during a following oscillation , the stress to which is subjected the element 21 along the axes x and y is inverted between the curves c 2 , c 3 . the curves c 2 , c 3 have minimum values m 1 ′, m 1 ″, m 2 ′, m 2 ″ along the edges of the element 21 and a maximum value m 1 ′ near the center of the element 21 . the resonance frequency of such a vibrating element in the shape of a disc may also be adjusted to match a setpoint frequency using patchs arranged on the regions m 1 ′, m 1 ″, m 2 ′, m 2 ″ or the region m 1 ′. thus fig1 a , 12 b show vibrating elements which resonance frequency is adjusted using patchs p 11 , p 12 . in fig1 a , the vibrating element 21 comprises four patchs p 11 formed along the edge of the vibrating element , away from the arms 24 . in the example of fig1 a , each patch p 11 has the shape of a spindle , which has a width w 1 along the radius of the disc 21 . the width w 1 of each patch p 11 may be adjusted according to the frequency correction to be obtained . admittedly , to adjust the frequency correction , it is also possible to adjust the length of the patch . the frequency correction obtained by the patchs p 11 may be negative if their width w 1 is small , or positive when w 1 is greater than a particular value . in fig1 b , the resonance frequency of the vibrating element 21 is increased using a patch p 12 formed at the center of the disc 21 . the frequency correction may be adjusted by modifying the radius w 2 of the patch p 12 ( or its thickness ). the possibilities of correction of the resonance frequency of vibrating elements , such as previously described , are taken advantage of in a method for collectively manufacturing components comprising a vibrating element , such as by implementing photolithography processes on a wafer of semiconductor material . it has been observed that on the semiconductor wafer the distribution of differences between a rated resonance frequency and the resonance frequency of the vibrating elements made on the wafer are substantially invariant from one batch to another . measuring these differences to determine their distribution on the wafer may therefore be performed once . this distribution is then used to determine the positions and dimensions ( lengths , widths , thicknesses , and the like ) of patchs to be formed on each of various vibrating elements of the wafer so as to reduce this frequency difference to an acceptable value , for example lower than 5 ppm . these patch positions and dimensions are then used to form a photo - etching mask allowing patchs to be formed at the dimensions and positions wanted on each of the vibrating elements in which resonance frequency is to be corrected . in one embodiment , the patchs may be formed by depositing a layer of the material chosen on the whole surface of the wafer after forming the vibrating elements , then etching the layer deposited by a photolithography process so as to leave only the patchs at wanted dimensions and locations of the wafer . the layer forming the patchs may be deposited using various known means . in some embodiments , the thickness of the layer deposited in which the patchs are formed is precisely controlled . thus , the layer forming the patchs may be made by atomic layer deposition ( ald ), physical vapor deposition ( pvd ), epitaxy if the layer forming the patchs is made of silicon , oxidation if the layer forming the patchs is made of silicon oxide , and the like . the positions and dimensions of the patchs to be formed according to the resonance frequency difference to be corrected may be determined using an abacus , such as that of fig8 , which are constituted from series of measurements taken on the vibrating element on which patchs of various dimensions are formed . the positions and dimensions of the patchs to be formed may also be determined with analytical or finite element models . it is to be noted that the patchs may be formed below the layer forming the vibrating elements , i . e ., by depositing a first layer onto the sacrificial layer , etching the first layer to form the patchs , then by depositing the second layer on the patch and etching the second layer to form the vibrating elements . in fig1 a , 13 b , patchs p 4 ′, p 5 ′ are arranged below the vibrating element 11 . if the patchs are made of the same material as that forming the vibrating elements , they may also be made by increasing the layer forming the vibrating elements by the thickness of the patchs , and removing a superficial layer having the thickness of the patchs at the locations without patchs . it will be clear to those skilled in the art that the present disclosure is susceptible to various other embodiments and applications . in particular , the disclosure is not limited to the vibrating elements previously described , but may apply to all the vibrating elements susceptible of being integrated on a wafer in a material such as semi - conductor , ceramics , glass or quartz . furthermore , the disclosure is not limited to electrostatically actuated and capacitive motion detection vibrating elements . the disclosure may apply to actuated micro - machined vibrating elements , or to vibrating elements whose movements are detected by other means , such as by piezoelectric , piezoresistive or magnetic effect . admittedly , the resonance frequency of the vibrating elements may be modified simply by forming in or on the vibrating element one or more areas of modified thicknesses , being understood that an area of modified thickness may also be a perforation going through the vibrating element . the various embodiments described above can be combined to provide further embodiments . these and other changes can be made to the embodiments in light of the above - detailed description . in general , in the following claims , the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and the claims , but should be construed to include all possible embodiments along with the full scope of equivalents to which such claims are entitled . accordingly , the claims are not limited by the disclosure .