reference will now be made in detail to the present preferred embodiments of the invention , examples of which are illustrated in the accompanying drawings . wherever possible , the same reference numbers are used in the drawings and the description to refer to the same or like parts . according to the high - power led array of the present invention , the high - power led dies are directly packed in the cavities of the pcb . the size of the high - power led array can therefore be reduced dramatically . further , the heat sink in the pcb also improves the efficiency of heat dissipation . additionally , the placement of the lens on each cavity can be adjusted to optimize light output from the high - power led array . fig2 is a cross - sectional diagram illustrating the high - power led array according to the first preferred embodiment of the present invention . the high - power led array 200 according to the first preferred embodiment of the present invention includes a pcb 210 , anodes 220 , cathodes 230 , high - power led dies 240 , heat sinks 250 , and lenses 260 . the pcb 210 includes cavities 211 arranged in an array . one or more high - power led dies 240 are placed in the cavity 211 . more than one high - power led dies 240 with the same emission wavelength , such as blue color high - power led dies , can be placed in the cavity 211 . alternatively , a combination of high - power led dies 240 with different emission wavelength can be employed . for example , a combination of red , green , and blue color high - power led dies 240 in the cavity 211 results in a white , high - power led array . an anode 220 and a cathode 230 are inside the cavity 211 , and are electrically connected to the high - power led dies 240 for providing power to the high - power led dies 240 . the anode 220 and the cathode 230 of the cavity 211 are correspondingly connected in parallel to the anode 220 and the cathode 230 of the adjacent cavity 211 . the anode 220 and the cathode 230 are further connected to a common anode 221 and a common cathode 231 , respectively . the high - power led dies 240 inside the cavity 211 are connected in series . as shown in the fig2 , the high - power led dies 240 are placed on metal contacts 212 in the cavity 211 . all high - power led dies 240 are electrically connected via the wire 213 , and are further connected to the anode 220 and the cathode 230 in the cavity 211 . further , the pcb 210 includes heat sinks 250 . the heat sink 250 corresponds to each high - power led die 240 , and is located underneath the metal contact 212 . the heat sink 250 is connected to the metal contacts 212 for conducting the heat generated by the high - power led dies 240 . the heat sink 250 is further connected to a common heat sink 251 . the common heat sink 251 is located on the backside of the pcb 210 for providing larger dissipation area . the heat generated by the high - power led dies 240 can be dissipated efficiently by the common heat sink 251 . after the high - power led dies 240 are placed in the cavity 211 and electrically connected to the anode 220 and the cathode 230 via the wire 213 , he cavity 211 is filled with packing material for securing the high - power led dies 240 . the packing material can be silicone or epoxy . subsequently , the lens 260 is placed on the cavity 211 and bonded to the packing material . the placement of the lens 260 can be adjusted for respective cavity 211 to optimize light emitted from each cavity 211 . fig3 is a cross - sectional diagram illustrating the high - power led array according to the second preferred embodiment of the present invention . the high - power led array 300 according to the second preferred embodiment of the present invention includes a pcb 310 , anodes 320 , cathodes 330 , high - power led dies 340 , heat sinks 350 , and lenses 360 . the pcb 310 includes cavities 311 arranged in an array . one or more high - power led dies 340 are placed in the cavity 311 . a plurality of one high - power led dies 340 with the same emission wavelength , such as blue high - power led dies , can be placed in the cavity 311 . alternatively , a combination of high - power led dies 340 with different emission wavelengths can be employed . for example , a combination of red , green , and blue color high - power led dies 340 in the cavity 311 result in a white , high - power led array . an anode 320 and a cathode 330 are inside the cavity 311 , and are electrically connected to the high - power led dies 340 for providing power to the high - power led dies 340 . the anode 320 and the cathode 330 of each cavity 311 are correspondingly connected to the anode 320 and the cathode 330 of the adjacent cavity 311 in parallel . the anode 320 and the cathode 330 are further connected to a common anode 321 and a common cathode 331 , respectively . the high - power led dies 340 inside the cavity 311 are connected in parallel . as shown in the fig3 , the high - power led dies 340 are placed on metal contacts 312 in the cavity 311 . metal contacts 312 are electrically connected via the wire 313 , and the high - power led dies 340 on both ends are further connected to the anode 320 and the cathode 330 in the cavity 311 . further , the pcb 310 includes heat sinks 350 . the heat sink 350 corresponds to each high - power led die 340 , and is located underneath the metal contact 312 . the heat sink 350 is connected to the metal contact 312 for conducting the heat generated by the high - power led dies 340 . the heat sink 350 is further connected to a common heat sink 351 . the common heat sink 351 is located on the backside of the pcb 310 for providing a larger dissipation area . by the common heat sink 351 , the heat generated by the high - power led dies 340 can be dissipated efficiently . after the high - power led dies 340 are placed in the cavity 311 and electrically connected to the anode 320 and the cathode 330 via the wire 313 . the cavity 311 for securing the high - power led dies 340 is filled with packing material . the packing material can be silicone or epoxy . subsequently , the lens 360 is placed on the cavity 311 and bonded to the packing material . the placement of each lens 360 can be adjusted for respective cavity 311 to optimize light emitted from each cavity 311 . further , the anodes and the cathodes of the adjacent cavities can also be electrically connected in series except for the parallel connection shown in the fig2 and fig3 . fig4 is a cross - sectional diagram illustrating a high - power led array 400 according to the third preferred embodiment of the present invention . the pcb 410 includes a cavity 411 a and a cavity 411 b . high - power led dies 440 a and 440 b are placed on the metal contacts 412 a and 412 b in the cavities 411 a and 411 b , respectively . the cavity 411 a and 411 b are electrically connected in series . the anode 420 a is connected to a common anode 421 , while the cathode 430 b is connected to a common cathode 431 . the adjacent cathode 430 a and the anode 420 b are connected in series . the high - power led die 440 a and 440 b are connected in series via the wire 413 a and 413 b , respectively . the metal contact 412 a and 412 b are connected to the heat sink 450 a and 450 b , correspondingly . the heat sink 450 a and 450 b are further connected to a common heat sink 451 for conducting heat generated by the high - power led die 440 a and 440 b . the lens 460 a and 460 b are placed on the cavity 411 a and 411 b for focusing the light emitted by the high - power led die 440 a and 440 b , respectively . fig5 is a cross - sectional diagram illustrating the high - power led array 500 according to the fourth preferred embodiment of the present invention , where the cavities are electrically connected in series , and the high - power led dies are electrically connected in parallel . the pcb 510 includes a cavity 511 a and 511 b . high - power led dies 540 a and 540 b are placed on the metal contacts 512 a and 512 b in the cavities 511 a and 511 b , respectively . the cavities 511 a and 511 b are electrically connected in series . the anode 520 a is connected to a common anode 521 , while the cathode 530 b is connected to a common cathode 531 . the adjacent cathode 530 a and the anode 520 b are connected in series . the high - power led dies 540 a and 540 b are connected in parallel via the wire 513 a and 513 b . the metal contacts 512 a and 512 b are connected to the heat sinks 550 a and 550 b , correspondingly . the heat sinks 550 a and 550 b are further connected to a common heat sink 551 for conducting heat generated by the high - power led dies 540 a and 540 b . the lens 560 a and 560 b are placed on the cavity 511 a and 511 b for focusing the light emitted by the high - power led dies 540 a and 540 b , respectively . further , the high - power led array according to the present invention can be connected to a secondary heat sink for enhancing the heat dissipation efficiency . as shown in the fig6 , the high - power led array 200 illustrated in the fig2 is further connected to a secondary heat sink 270 . the common heat sink 251 of the high - power led array 200 is secured to the secondary heat sink 270 via a thermal conductive adhesive 271 . the dissipation efficiency of the high - power led array 200 can therefore be enhanced by the secondary heat sink 270 . fig7 is a flowchart illustrating the high - power led array packing method for packing a high - power led array on a pcb according to the present invention . the pcb includes cavities arranged in an array . an anode and a cathode are placed inside the cavity . the anodes of the cavities are electrically connected , while the cathodes of the cavities are also electrically connected . according to the high - power led array packing method of the present invention , one or more high - power led dies are placed in the cavity ( step 702 ). the high - power led dies can be iii - v high - power led dies , and can have the same or different emission wavelengths . next , the high - power led dies are electrically connected to the anode and the cathode in the cavity ( step 704 ). the high - power led dies can be connected in series or in parallel via wires . subsequently , the cavity is filled with packing material for securing the high - power led dies in the cavity ( step 706 ). the packing material can be silicone or epoxy . then , a lens is placed on the cavity for focusing light emitted by the high - power led dies . the placement of the lens can be adjusted to optimize the light output . the high - power led array according to the present invention has a significantly reduced size , and the efficiency of heat dissipation and the optical alignment are also improved . the placement of the lens on the cavity can be adjusted to optimize the light output . further , the configuration of more than one high - power led dies in the cavity enables the combination of high - power led dies with different emission wavelengths in a single high - power led array . the light intensity per unit area of the high - power led array is also dramatically increased . further , the high - power led array packing method according to the present invention simplifies the packing procedures , increases the power - to - volume ratio , and reduces the manufacturing cost . it will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention . in view of the foregoing , it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents .