a device designated 1 overall for the detection of at least one ligand 2 contained in an essentially liquid sample to be tested has a semiconductor chip 3 which is integrated using methods from the semiconductor engineering industry with an optical waveguide 4 ( fig1 ). the waveguide can be made of a polymer material , for example . fig2 shows that on the surface of the waveguide 4 , receptors 5 are immobilized that , when they come into contact with the ligand 2 , bind to it . the receptors can be immobilized by silanization , for example , or by a polyimide layer located on the waveguide 4 , to which the receptors adhere . the receptors 5 can be imprinted on the waveguide 4 on the polyimide layer or on the polyimide layer located on the waveguide 4 . in the exemplary embodiment illustrated in fig2 , the receptors 5 are antibodies to a specified epitope of the ligand 2 . after the bonding of the epitope to the receptor 5 , the antibody complex thus formed , consisting of the epitope and the receptor 5 , is marked by means of a second antibody 6 that bonds to the first epitope . this antibody 6 is directly or indirectly marked with a luminescent substance 7 . fig1 shows that an optical semiconductor radiation source 8 , such as a laser diode or led , for example , is integrated into the semiconductor chip 3 . the spectrum of the radiation 9 emitted by the radiation source 8 has at least one excitation wavelength at which the luminescent substance 7 is excited to the emission of luminescence radiation 10 . for the injection of the excitation radiation 9 into the waveguide 4 , in the emission range of the radiation source 8 there is an optical injection system 11 , which has microprisms ( not illustrated in any further detail in the drawing ), which deflect the excitation radiation emitted by the radiation source 8 so that it is guided utilizing the total reflection in the waveguide 4 . as a result of the total reflection at the boundary surface of the waveguide 4 , an electromagnetic field is produced in the optically thinner medium , namely the sample , as a result of which the luminescent substances 7 bonded to the surface of the waveguide 4 are excited to emit luminescence radiation 10 . because the evanescence field penetrates into the sample by a depth of only a few hundred nanometers , the luminescent substances 7 that are excited to emit the luminescence radiation 10 are almost exclusively those on the surface of the waveguide , while the unbonded luminescent substances 7 in the sample contribute practically nothing to the luminescence radiation . for the detection of the luminescence radiation there are a plurality of optical radiation receivers 12 integrated into the semiconductor ship 3 , whereby all of the radiation receivers 12 are realized in the form of semiconductor components . the radiation receivers 12 are located on the back side of the waveguide 4 , which is permeable to the luminescence radiation 10 and faces away from the receptors 5 . the luminescence radiation 10 therefore strikes an optical imaging system on the radiation receivers 12 directly , i . e . without the interposition of an optical imaging system . the device thereby has a compact and economical construction . the luminescent substance 7 is an upward - converting luminescent substance . luminescent substances of this type are described in ep 0 723 146 a1 . examples of upward - converting luminescent substances include the bnd pigment by dyomics gmbh , jena , and ir - 140 . in contrast to downward - converting luminescent substances , upward - converting luminescent substances do not acquire the energy needed for the quantum emission from a single quantum effect , but from multiple quantum effects . downward - converting luminescent substances , in comparison to downward [ sic ] converting luminescent substances therefore have a significantly greater stokes shift , at which the wavelength of the exciting radiation can be approximately twice as great , for example , as the wavelength of the luminescence radiation . it is thereby possible to provide , as the radiation source , an infrared semiconductor radiation source 8 which makes possible a high level of radiation intensity with compact dimensions . the infrared light from such semiconductor radiation sources 8 also has the advantage that fewer scatter effects occur than with short - wave optical radiation . by means of the upward - converting luminescent substance 7 , the optical radiation emitted by the radiation source 8 can be converted into visible light or near - infrared light , to which the radiation receivers 12 have a high detection sensitivity . the radiation receivers 12 are insensitive to the excitation radiation 9 . fig2 and 3 show that the waveguide 4 extends to over the radiation receiver 12 and that the receptors 5 are located on the surface of the waveguide 4 directly opposite the radiation receiver 12 . thus the luminscence radiation 10 can travel directly from the luminescent substance 7 to the radiation receivers 12 . in the exemplary embodiment illustrated in fig4 and 5 , the waveguide 4 is directly adjacent to the semiconductor chip 3 . the waveguide 4 has interruptions in which structures 13 for an electronic circuit are located . this circuit has printed conductors that are connected with the radiation receivers 12 . the topography of the semiconductor chip in the area of the semiconductor chip adjacent to the waveguide 4 is realized so that the boundary surface 14 opposite the receptors 5 between the semiconductor chip 3 and the waveguide 4 runs between two imaginary planes 14 a , 14 b that are each oriented parallel to the plane of extension of the semiconductor chip 3 , whereby the distance x between said planes is less than one - eighth of the wavelength of the excitation radiation 9 . this arrangement almost completely prevents an undesirable light extraction out of the waveguide 4 at the boundary surface 14 . structures that require a surface topography of the semiconductor chip 3 that is different from a plane , such as printed conductors made of aluminum , for example , are essentially located laterally next to the waveguide 4 . in the exemplary embodiment illustrated in fig5 , the waveguide 4 is formed by a semi - metal oxide layer , which extends over an area near the surface on a semiconductor substrate 3 of the semiconductor chip 3 and runs approximately parallel to the plane of extension of the semiconductor substrate . the semiconductor substrate can be made of silicon , for example . in the exemplary embodiment illustrated in fig6 , between the semiconductor chip 3 and the waveguide 4 , there is an intermediate layer 15 that runs approximately parallel to the plane of extension of the semiconductor chip 3 and the optical index of refraction of which is less than that of the waveguide 4 . the intermediate layer 15 is directly adjacent to the semiconductor chip 3 and has the negative shape of the semiconductor chip 3 . this shape can be achieved , for example , if the material for the intermediate layer 15 is deposited during the manufacture of the device 1 in liquefied form on the semiconductor chip 3 using the centrifuge process and — after it has been distributed uniformly over the surface of the semiconductor chip 3 — has solidified . on its side facing away from the semiconductor chip 3 , the intermediate layer 15 is flat . the waveguide 4 is deposited on the intermediate layer 15 in the form of an additional layer . the result is a flat boundary surface between the intermediate surface 15 and the waveguide 4 , which makes possible a largely loss - free guidance of the excitation radiation 9 in the waveguide 4 . the waveguide 4 can thereby extend continuously over the semiconductor chip 3 . fig1 shows that the radiation receivers 12 are connected by means of printed conductors with an actuator and analysis device 16 that is integrated into the semiconductor chip . the analysis device 16 has an interface device that is schematically indicated in the drawing for connection with a higher - level display and / or analysis unit , such as a microcomputer , for example . fig7 shows that a plurality of radiation receivers 12 are integrated next to one another in the form of a matrix in the semiconductor substrate . in the detection range of the individual radiation receivers 12 , each detection field is located with a plurality of receivers 5 . the individual detection fields have different receivers 5 , each of which can enter into a bond with a specified ligand 2 . in fig2 to 4 , the receptors are shown on a larger scale than the radiation receivers 12 . the distances between detection fields that are next to one another on one hand and the distances between the luminescent substances 7 bonded to the receptors 5 and the radiation receivers 12 associated with them are selected so that the individual radiation receivers 12 can receive essentially no luminescence radiation from a detection field of a neighboring radiation receiver . fig1 shows that the semiconductor chip 3 forms a wall area of a flow - through measurement chamber , in the interior cavity 17 of which the receptors 5 are located . the flow - through measurement chamber has an inlet opening 19 and an outlet opening 18 . the inlet opening 19 is connected with a feed line for the sample , which is not shown in any detail in the drawing , and the outlet opening 18 is connected with a discharge line . it should also be mentioned that the radiation source 8 is connected , for the modulation of the excitation radiation 9 , with a modulation device 20 , which is integrated into the semiconductor chip 3 . by means of the modulation device 20 , the excitation radiation 9 can be turned on and off in cycles , for example , to take into consideration in the analysis any signal components that may be caused by spurious light or non - specific optical excitation . for this purpose , the modulation device 20 must be connected with the analysis device 16 by means of a connecting line . the device 1 for the detection of at least one ligand 2 contained in a sample to be analyzed therefore has an optical waveguide 4 , on the surface of which at least one receptor 5 that is specific for the ligand 2 is directly or indirectly immobilized . when the ligand 2 comes into contact with the receptor 5 , it bonds to the receptor . the device 1 has at least one optical radiation source 8 for the injection of excitation radiation 9 into the waveguide 4 . the radiation 9 is used to excite the emission of luminescence radiation 10 as a function of the bonding of the ligand 2 to the receptor 5 . for the detection of the luminescence radiation 10 , at least one radiation receiver 12 is integrated into the semiconductor substrate of a semiconductor chip 3 . the waveguide 4 is monolithically integrated with the semiconductor substrate or is applied to the semiconductor substrate in the form of a waveguide layer .