the embodiments of the invention and the various features and advantageous details thereof are explained more fully with reference to the non - limiting embodiments that are illustrated in the accompanying drawings and detailed in the following description . it should be noted that the features illustrated in the drawings are not necessarily drawn to scale . descriptions of well - known components and processing techniques are omitted so as to not unnecessarily obscure the embodiments of the invention . the examples used herein are intended merely to facilitate an understanding of ways in which the embodiments of the invention may be practiced and to further enable those of skill in the art to practice the embodiments of the invention . accordingly , the examples should not be construed as limiting the scope of the embodiments of the invention . as mentioned , there remains a need for a device that can eliminate the problem of 1 / f noise in small magnetic sensors . the embodiments of the invention achieve this by providing a modified mems flux concentrator to mitigate the effects of 1 / f noise in magnetic sensors . referring now to the drawings , and more particularly to fig1 ( a ) through 8 , where similar reference characters denote corresponding features consistently throughout the figures , there are shown preferred embodiments of the invention . as illustrated in fig1 ( a ) , the embodiments of the invention provide a mems device 1 comprising a pair of mems flux concentrators 3 positioned on opposite sides of a magnetic sensor 2 . the flux concentrators 3 are used to enhance the magnetic field at the position of the magnetic sensor 2 by a factor ranging from 1 . 5 to as much as a 100 . preferably , the flux concentrators 3 are comprised of soft magnetic materials such as permalloy . according to the embodiments of the invention , the flux concentrators 3 are deposited on mems flaps 7 , and a silicon on insulator ( soi ) wafer 6 is used as the substrate . preferably , the soi wafer 6 is used in lieu of a plain silicon wafer because fewer processing steps are required and the soi wafer 6 provides a flat surface 28 for fabricating the magnetic sensor 2 . the soi wafer 6 comprises a thin upper device layer 8 of silicon separated from a thick layer ( also referred to as the handle layer ) 10 of silicon by an approximately 1 to 5 micron silicon dioxide ( sio 2 ) layer 9 . the mems flaps 7 are driven to oscillate at frequencies on the order of 10 khz by electrostatic comb drives 4 . the electrostatic comb drives 4 have the advantage that they provide sufficient force to drive the flux concentrators 3 and springs 5 and that , unless the amplitude of the motion is too large , the force is independent of displacement . the flaps 7 on each side of the magnetic sensor 2 are connected by the springs 5 so that the flaps 7 have a common normal mode frequency . this is a preferred feature of the embodiments of the invention because if the motion of the two flaps 7 were not coupled , the relative phase between the motion of the flaps 7 would tend to drift . when the flux concentrators 3 oscillate , they modulate the field at the position of the magnetic sensor 2 . this shifts the operating frequency of the mems device 1 from the high 1 / f noise region at low frequencies to higher frequencies where the sensor noise is orders of magnitude lower . moreover , the thickness of the springs 5 and separation of the teeth 11 in each of the comb drives 4 is approximately 2 μm . during fabrication , the flux concentrators 3 , comb drives 4 , and springs 5 may be released from the soi wafer 6 by dipping the mems device 1 into hydrofluoric ( hf ) acid . the hf acid removes portions of the insulating sio 2 layer 9 . alternatively , one could use an alternate wafer 26 in which the sio 2 layer 9 of the soi wafer 6 ( of fig1 ( a ) ) is replaced by an approximate 20 μm thick epoxy layer 19 as shown in fig1 ( b ) . for example , the type of epoxy material that may be used is described in u . s . pat . no . 6 , 617 , 657 , the complete disclosure of which , in its entirety , is herein incorporated by reference . except for the fact that the sio 2 layer 9 is replaced by the epoxy layer 19 , the properties of this alternate wafer 26 are very similar to the soi wafer 6 of the first embodiment . this alternative approach has the advantage that the epoxy layer 19 can be removed during the release step by exposing the mems device 1 to an oxygen plasma environment . this eliminates the problem of possible damage to the magnetic sensor 2 caused by the hf during the release step . it is preferable that the magnetic sensor 2 is responsible for most of the 11f noise and not some other part of the sensor system . this feature of the embodiments of the invention greatly reduces the 1 / f noise of the magnetic sensor 2 . however , it does not contribute to the reduction of the 1 / f noise of the flux concentrators 3 . thus , it is preferable that the 1 / f noise of the flux concentrators 3 be much less than the 1 / f noise of the magnetic sensor 2 . this constraint was experimentally verified . experimentally , the noise power spectrum was measured on spin valves 2 , which is a type of gmr sensor , both with and without flux concentrators 3 . the measurements were repeated with different currents passing through the spin valves . the results of these measurements are shown in fig2 . the curves are labeled by the value of the resistor in series with the spin valve 2 that limited the current , i , through the spin valve 2 . the resistance of the spin valve 2 is approximately 400 ohms . the noise is much higher for lower values of resistance because the 1 / f noise is expected to increase as i 2 . of more significance , the noise power spectra is indistinguishable for different currents passing through the spin valves 2 with and without the flux concentrators 3 . this result implies that 1 / f noise of the flux concentrator 3 is much less than the 1 / f noise of the spin valve 2 . the likely explanation for the result that 1 / f noise of the flux concentrator 3 is much less than the 1 / f noise of the spin valve 2 is that the flux concentrator 3 is structurally much larger than the spin valve 2 . preferably , the flux concentrator 3 is approximately 1 , 500 times larger than the spin valve 2 . furthermore , it is expected that the 1 / f noise power is proportional to 1 / n where n is the number of atoms in the system . generally , it is not practical to put a useful experimental bound on the noise from the flux concentrator 3 using this data . rather , it is easier to estimate the noise in the flux concentrators 3 once the noise in the magnetic sensor 2 is minimized through the operation of the flux concentrators 3 , comb drives 4 , and springs 5 . nevertheless , this experiment provides strong support of the concept of using the mems flux concentrators 3 to minimize 1 / f noise of the magnetic sensor 2 . with respect to fig1 ( a ) and 1 ( b ) , during operation of the mems device 1 , a constant current is sent through the spin valve magnetic sensor 2 and the resulting voltage is sent to the signal processing electronics ( not shown ). this signal is modulated by the motion of the flux concentrators 3 , comb drives 4 , and springs 5 . a voltage at a frequency f 0 is applied to drive the motion of the flux concentrators 3 , comb drives 4 , and springs 5 . this voltage , independent of its sign , creates a force that tends to increase the overlap of the teeth 11 of the comb drives 4 . because the force is independent of the sign of the applied voltage , the mems motion occurs at a frequency 2f 0 . thus , the signal is insensitive to pickup at the drive frequency f 0 . the voltage across the spin valve 2 is amplified by a broadband amplifier ( not shown ) and demodulated . the first step in the fabrication process of the mems device 1 is the deposition of the spin valves 2 on the soi wafer 6 . for example , spin valves 2 , such as those available from nve corporation , minnesota , usa and having a magnetoresistance of approximately 5 %, may be used . spin valves 2 are chosen as the magnetic sensor 2 in the preferred embodiment of the invention because they represent a mature technology with a significant amount of 1 / f noise . as shown in fig3 , the spin valve 2 is generally configured as a multi - layered structure comprising a plurality of magnetic films 14 . the magnetic films 14 are preferably deposited on a si 3 n 4 - covered wafer 13 by radio frequency ( rf ) diode sputtering . a magnetic field of approximately 20 oe is applied during the deposition to induce the magnetic easy axes and pinning direction . the magnetic films 14 comprise an antiferromagnetic layer ( preferably comprising crptmn ) 15 and two thin ferromagnetic layers 16 , 18 separated by a thin conducting layer ( preferably comprising cu ) 17 . the rotation of the magnetization of one of the ferromagnetic layers ( preferably comprising cofe ) 18 , the pinned layer , is hindered by exchange interactions at the interface with the antiferromagnetic layer 15 . the magnetization of the other ferromagnetic layer ; i . e ., free layer ( preferably comprising nifeco / ta / nifeco ) 16 rotates in response to an applied field . the resistance of the magnetic films 14 has its minimum value when the magnetizations of the two ferromagnetic layers 16 , 18 are parallel . following the deposition of magnetic films 14 , the unpatterned sensor wafer 13 is annealed in forming gas at approximately 200 ° c . for approximately 2 hours . following the patterning of the device stripes , the sensor wafer 13 undergoes a final sequence of annealing steps ( temperature up to approximately 265 ° c .) to establish the magnetization of the pinned layer 18 across the stripe , and the magnetization of the free layer 16 down the stripe . the magnetic sensors 2 are patterned approximately 3 μm wide and approximately 88 μm long . preferably , the flux concentrators 3 are trapezoidal in shape and are made by dc magnetron sputtering of two repeats ( i . e ., double layer ) of approximately 40 å cr / 1 , 500 å permalloy films ( cr films 31 a , 31 b and permalloy films 32 a , 32 b ) deposited on photoresist 33 covered soi wafers 6 as shown in fig4 . the base pressure is approximately 2 × 10 − 7 torr . no bias voltage or substrate heating is applied during the deposition . preferably , the cr 31 a , 31 b is deposited at approximately 1 . 5 mtorr with approximately 60 w of dc power . preferably , the permalloy 32 a , 32 b is deposited at approximately 1 . 25 mtorr at approximately 300 w of dc power . the deposition conditions are chosen to maximize domain size and to minimize film stress . the intervening cr films 31 a , 31 b serves to break up the magnetic and structural continuity of the permalloy films 32 a , 32 b and thus suppress the formation of a stripe - like magnetic domain configuration and to achieve high magnetic permeability . the height of the flux concentrator 3 is approximately 104 μm . the short side of the trapezoid configuration of the flux concentrator 3 is approximately 83 μm long and the longer , back side of the trapezoid configuration of the flux concentrator is approximately 150 μm long . the size of the flux concentrators 3 is limited by the need to keep the resonant frequency of the flux concentrators 3 , comb drives 4 , and springs 5 in the range of several khz or higher . the values for the enhancement provided by the flux concentrators 3 are calculated when the separation between the mems flaps 7 is at their planned maximum and minimum displacements . these values are approximately 1 . 5 and 3 . 5 , respectively . the mechanical resonant frequencies of seven different mems devices 1 are calculated for making mechanical finite element calculations . table 1 shows the results of these calculations . the two low frequency normal modes for in plane motion are for the two mems flaps 7 and are to move in phase with one another or 180 degrees out of phase . the later mode is the desired mode . it is higher in frequency because the spring 5 connecting the two flaps 7 is compressed . in a first embodiment , the flux concentrators 3 , comb drives 4 , and springs 5 are formed by removing silicon from the device layer 8 using deep reactive ion etching ( drie ). as previously mentioned , the flux concentrators 3 , comb drives 4 , and springs 5 are released from the underlying soi wafer 6 by dipping the flux concentrators 3 , comb drives 4 , and springs 5 in hf acid to remove the underlying sio 2 layer 9 . laser dicing may be used to separate different devices during fabrication . however , the hf used in the release step may damage the spin valves 2 . accordingly , three solutions may be used to solve this problem . the preferred solutions are using : ( 1 ) si / epoxy / si wafers 26 — in this case , the release is performed in an oxygen plasma that will not affect the spin valves 2 ; ( 2 ) flip - chip bonding — the flux concentrators 3 , comb drives 4 , and springs 5 and the spin valves 2 are fabricated on separate wafers 6 , 13 , respectively and the spin valves 2 are not exposed to hf ; and ( 3 ) using protective layers such as bilayers of silicon nitride and gold ( not shown ) that will prevent the hf from damaging the spin valves 2 . fig5 ( a ) and 5 ( b ) illustrate the resistance of spin valves 2 with and without flux concentrators 3 . the amount that the flux concentrators 3 enhance the field is compared with calculated values in table 2 , which indicates that the agreement is good . fig6 shows the amplitude of the motion of flux concentrators 3 , comb drives 4 , and springs 5 versus the frequency . the in phase mode and out of phase mode are shown . the q of the out of phase mode that will be used to modulate the field is approximately 30 . based on this value for q , it can be estimated that it will only require microwatts of energy to drive the required motion of the flux concentrators 3 , comb drives 4 , and springs 5 . the zero field resistance of the mems device 1 is approximately 392 ohms . the largest magnetoresistance change is only approximately 5 %. to observe a field change of approximately 1 nt at low fields , one would have to detect a voltage change of approximately 5 × 10 9 v in a voltage of background of approximately 0 . 82 volts . this illustrates the problem of the large dc bias previously mentioned . accordingly , the mems flux concentrators 3 modulates the field to be sensed . thus , this eliminates the problem of the dc bias . moreover , magnetic sensor systems having a single sensor element per field direction may be utilized according to the embodiments of the invention . the solution to the problem of minimizing 1 / f noise in magnetic sensors 2 and the development of the mems flux concentrators 3 for minimizing the effect of 1 / f noise in magnetic sensors is provided according to the embodiments of the invention . a very difficult task of fabricating the mems device 1 is provided according to the embodiments of the invention by combining two very different technologies , mems fabrication technology and magnetic sensor technology . the resulting mems device 1 may increase the sensitivity of small , low cost , magnetic sensors 2 by one to three orders of magnitude . the mems device 1 can be fabricated on wafers 6 , 26 by low cost , mass production techniques . moreover , powering the motion of the mems flaps 7 only requires microwatts of energy . additionally , noise spectrum data , as presented above , provides strong evidence that the mems device 1 concept works correctly . fig7 ( with reference to fig1 ( a ) through 6 ) illustrates a flow diagram of fabricating a mems device 1 according to an embodiment of the invention . first , a sensor 2 is deposited ( 101 ) on a soi wafer 6 . then , electrical contacts ( not shown ), which may comprise gold , are deposited ( 103 ). the next step involves sputtering ( 105 ) the permalloy 32 a , 32 b of the flux concentrators 3 . next , a drie process is performed ( 107 ) on the device layer 8 of the wafer 6 to define the flux concentrators 3 , comb drives 4 , and springs 5 . thereafter , a backside drie process is performed ( 109 ) on the handle layer 10 to remove the silicon dioxide layer 9 beneath the mems flux concentrator flaps 7 . after this , the flux concentrators 3 , comb drives 4 , and springs 5 are released ( 111 ). finally , dicing ( 113 ) and packaging ( 115 ) processes are performed to complete the fabrication process . an alternative fabrication process is to use flip chip bonding . in this approach , the flux concentrators 3 , comb drives 4 , and springs 5 are fabricated on a soi wafer 6 by standard mems processing . the magnetic sensor 2 is deposited on a wafer 13 . as shown in fig8 , indium ( in ) bumps 35 can be deposited on the wafer 13 . preferably , the indium bumps 35 are each approximately 2 to 8 microns thick . the soi wafer 6 and the wafer 13 can be brought together and bonded by applying only pressure and no heating ( i . e ., non - thermal means only ). the bonding pressure is approximately 0 . 5 gm / in bump and the area of the indium bumps 35 are approximately on the order of 20 sq . microns . this avoids possible damage to the magnetic sensor 2 by heating . the bonding is performed by compressing the indium bumps 35 between gold electrodes ( not shown ). the lateral alignment may be off by approximately five microns . however , this amount of misalignment does not affect the operation of the mems device 1 . as mentioned , the advantage of some magnetic sensors having a large response is greatly decreased because of 1 / f noise . according to the embodiments of the invention , the mems flux concentrators 3 mitigate the effect of 1 / f noise . the flux concentrators 3 achieve this by being positioned on the mems flaps 7 that oscillate at khz frequencies . by shifting the operating frequency , the 1 / f noise is reduced by one to three orders of magnitude depending upon the magnetic sensor 2 and the desired operating frequency . in fact , only microwatts are required to drive the motion . the foregoing description of the specific embodiments will so fully reveal the general nature of the invention that others can , by applying current knowledge , readily modify and / or adapt for various applications such specific embodiments without departing from the generic concept , and , therefore , such adaptations and modifications should and are intended to be comprehended within the meaning and range of equivalents of the disclosed embodiments . it is to be understood that the phraseology or terminology employed herein is for the purpose of description and not of limitation . therefore , while the embodiments of the invention have been described in terms of preferred embodiments , those skilled in the art will recognize that the embodiments of the invention can be practiced with modification within the spirit and scope of the appended claims .