next , with reference to the drawings , the present invention will be illustrated in detail through the embodiments , but this is not to limit the invention , those skilled in the art could make various amendments or improvements according to the basic thought of the invention , it belongs to the scope of the present invention overall , if not depart from the basic thought of the invention . embodiment 1 : a metal composite substrate comprising a wcu metal substrate and a gan mono - crystalline layer bonded with au — au bonds in the first step , a 4 μm thick gan mono crystal epitaxial layer 1 is grown on a 2 inch 430 μm thick sapphire substrate 6 using metal - organic chemical vapor deposition ( mocvd ) well - known in the art . in the second step , a 1 μm layer of sio 2 thin film is grown on the surface of the gan mono - crystalline that has been grown using plasma enhanced chemical vapor deposition ( pecvd ) technology , the sio 2 thin layer is then patterned with lithography and dry etched well - known in the art into periodic conical structures 5 ′ spaced by a period of about 3 μm , with a base diameter of about 2 . 5 μm and a height of about 1 μm , as shown in fig1 a . the gan surface is exposed in the space between the conical patterns . the periodic structures can be used as a reflective layer . in the third step , gan is continuously grown on the surface of the gan mono - crystalline with a reflective layer prepared using hvpe technology well - known in the art , until the thickness of gan mono - crystalline reaches to 10 μm , as shown in fig1 b . in the fourth step , the gan surface of the gan mono - crystalline that has been grown is bonded with a 2 inch 400 μm thick mono - crystalline si substrate 7 by 502 instant adhesive , using a si substrate 7 as a transfer and support substrate , and the sapphire substrate is then lifted off by laser lift - off technology well - known in the art , leaving gan mono - crystalline bonded on the si substrate , the process of transferring and lifting off is as shown in fig1 , the gan mono - crystalline layer with a reflective layer located on the si substrate obtained is as shown in fig1 c . in the fifth step , a 1 μm au layer is deposited simultaneously on the gan surface of gan mono - crystalline on the si substrate and the surface of wcu alloy substrate , and then they are bonded together at 300 ° c ., under a pressure of 5 tons , for 15 minutes . after bonding , the 502 instant adhesive is carbonized at high temperature , which allows si substrate to separate from gan / wcu composite substrate automatically , as shown in fig1 . in the sixth step , a 500 nm sio 2 thin film protective layer is grown on the face , inverse and side of the substrate , then the side walls of the substrate are protected by photoresist , the sio 2 thin films on the gan surface and bottom surface of the substrate are etched off using boe solutions , leaving the protective region of the side wall . at last , a composite substrate as shown in fig1 d is obtained after surface cleaning , which includes a 150 μm thick wcu alloy metal substrate 2 with a w : cu mass ratio of 15 : 85 . the wcu alloy metal substrate and a layer of 10 μm thick gan mono - crystalline are bonded with au — au bonds by a au bonding layer 4 2 μm in thickness . the substrate has a 500 nm thick sio 2 protective layer 3 on the side wall , which is designed as the first type of the design project described in the summary of the invention . a reflective layer of patterned structures 5 ′ of is embedded in the gan mono - crystalline layer 1 and is at 4 μm distance from the bonding layer 4 . the patterned structures are conical sio 2 patterned layer structures spaced at a 3 μm period , with a height of about 1 μm and a bottom diameter about 2 . 5 μm , as shown in fig1 . embodiment 2 : a metal composite substrate comprising a mocu metal substrate and a gan mono - crystalline layer bonded with au — au bonds in the first step , a 4 μm thick gan mono - crystalline epitaxial layer is grown on a 2 inch 430 μm thick sapphire substrate using mocvd technology well - known in the art . in the second step , a layer of 1 μm thick sio 2 thin film is grown on the surface of the gan mono - crystalline that has been grown using pecvd technology , and the sio 2 thin layer is then patterned with lithography and dry etched well - known in the art into periodic conical structures spaced by a period of 3 μm , with a base diameter of 2 . 5 μm , a height of 1 μm , as shown in fig1 a . the gan surface is exposed in the space between the conical patterns . the periodic structures can be used as a reflective layer . in the third step , gan is continuously grown on the surface of the gan mono - crystalline with a reflective layer prepared using hvpe technology well - known in the art , until the thickness of gan mono - crystalline reaches to 10 μm , as shown in fig1 b . in the fourth step , the gan surface of the gan mono - crystalline that has been grown and a 2 inch 400 μm thick si mono - crystalline substrate are bonded with 502 instant adhesive , using the si substrate as a transfer and support substrate . and the sapphire substrate is then lifted off by laser lift - off technology well - known in the art , leaving gan mono - crystalline bonded on the si substrate . the process is as shown in fig1 , and the product prepared is as shown in fig1 c . in the fifth step , a 1 μm au layer is deposited simultaneously on the gan surface of gan mono - crystalline on the si substrate and the surface of mocu alloy substrate , and then they are bonded together at 300 ° c ., under a pressure of 5 tons , for 15 minutes . after bonding , the 502 instant adhesive is carbonized at high temperature , which allows si substrate to separate from gan / wcu composite substrate automatically . in the sixth step , a 2 μm thick si 3 n 4 thin film protective layer is grown on the face , inverse and side of the substrate , then the side walls of the substrate and the 5 mm area of the gan surface edge are protected by photoresist , the si 3 n 4 thin films on the rest portion of the gan surface and the entire bottom surface of the substrate are etched off using boe solutions , leaving the side walls and the 5 mm region of the gan surface edge . at last , a composite substrate as shown in fig1 is obtained after surface cleaning , which includes a layer of 150 μm thick mocu alloy metal substrate 2 with a mo : cu mass ratio of 20 : 80 . the mocu alloy metal substrate and a layer of 10 μm thick gan mono - crystalline 1 are bonded with au — au bonds , wherein the bonding layer 4 of au is 2 μm in thickness . the substrate has a 2 μm thick si 3 n 4 protective layer 3 on the side walls and a portion of the top surface , which is designed as the second type of the design project described in the summary of the invention . a reflective layer of patterned structures 5 ′ is embedded in the gan mono - crystalline layer 1 and is at 4 μm distance from the bonding layer 4 . the patterned structures are conical sio 2 patterned layer structures spaced at a 3 μm period , with a height of about 1 μm and a base diameter about 2 . 5 μm . embodiment 3 : a metal composite substrate comprising a mocu metal substrate and a gan mono - crystalline layer bonded with ni — ni bonds in the first step , a 4 μm thick gan mono - crystalline epitaxial layer is grown on a 2 inch 430 μm thick sapphire substrate using mocvd technology well - known in the art . in the second step , the gan surface of the gan mono - crystalline that has been grown and a 2 inch 400 μm thick si mono - crystalline substrate are bonded with 502 instant adhesive , using the si substrate as a transfer and support substrate , and the sapphire substrate is then lifted off by laser lift - off technology well - known in the art , leaving gan mono - crystalline bonded on the si substrate , as shown in fig1 . in the third step , a reflective layer 5 is formed by depositing a 200 nm pd metal layer on the gan surface of the gan mono - crystalline layer on the si substrate , as shown in fig1 a . in the fourth step , a 2 μm ni is deposited simultaneously on the reflective layer of gan mono - crystalline on the si substrate that has deposited the reflective layer and the surface of mocu alloy substrate , and then they are bonded together at 800 ° c ., under a pressure of 15 tons , for 15 minutes , the bonding techniques is referred to fig1 . after bonding , the 502 instant adhesive is carbonized at high temperature , which allows si substrate to separate from gan / mocu composite substrate automatically . in the fifth step , a 50 μm thick si 3 n 4 thin film protective layer is grown on the face , inverse and side of the substrate , then the side walls of the substrate and the 5 mm area of the bottom surface edge of the mocu substrate are protected by photoresist , the si 3 n 4 thin films on the rest portion of the gan surface and the whole bottom surface of the substrate are etched off using boe solutions , leaving the side walls and the 5 mm region of the bottom surface edge of the mocu substrate . at last , a composite substrate as shown in fig1 b is obtained after surface cleaning , which includes a layer of 150 μm thick mocu alloy metal substrate 2 with a mo : cu mass ratio of 20 : 80 . the mocu alloy metal substrate and a layer of 4 μm thick gan mono - crystalline 1 are bonded with ni — ni bonds , wherein the bonding layer 4 of ni is 4 μm in thickness . the substrate has a 50 nm thick si 3 n 4 protective layer 3 on the side walls and a portion of the bottom surface , which is designed as the third type of the design project described in the summary of the invention . a layer of pd metal reflective layer 5 is embedded in the gan mono - crystalline layer 1 close to the bonding layer 4 . embodiment 4 : a composite substrate comprising a si substrate and a gan mono - crystalline layer bonded by van der waals force in the first step , a 4 μm thick gan mono - crystalline epitaxial layer is grown on a 2 inch 430 μm thick sapphire substrate using mocvd technology well - known in the art . in the second step , gan is continuously grown on the gan mono - crystalline using hvpe technology well - known in the art , until the thickness of gan mono - crystalline reaches to 46 μm . in the third step , a layer of 1 μm thick sio 2 thin film is grown on the surface of the gan mono - crystalline that has been grown by pecvd technology , and the sio 2 thin layer is then patterned with lithography and dry etched well - known in the art into periodic cylindrical patterned structures 5 ′ spaced by a period of about 3 μm , with a base diameter of about 2 μm and a height about 1 μm , as shown in fig1 a . the gan surface is exposed in the space between the cylindrical structures . the periodic structures can be used as a reflective layer . in the fourth step , gan is continuously grown on the gan mono - crystalline that has prepared a reflective layer using hvpe technology well - known in the art , until the thickness of gan mono - crystalline reaches to 50 μm , as shown in fig1 b . in the fifth step , the gan mono - crystalline prepared with a reflective layer and a 400 μm thick si layer are directly bonded by van der waals force , at 900 ° c ., under a pressure of 20 tons , for 30 minutes , forming a structure sample like sapphire / gan / si , as shown in 17 c . in the sixth step , the sapphire substrate is then lifted off by laser lift - off technology well - known in the art , leaving the composite substrate with gan / si bonded . in the seventh step , a 5 μm thick sio 2 thin film protective layer is grown on the face , inverse and side of the substrate , then the side walls and the 5 mm areas of the gan surface edge and the bottom surface edge of si substrate of the substrate are protected by photoresist , the sio 2 thin films on the rest portions of the gan surface and the bottom surface of si substrate and the whole bottom surface of the substrate are etched off using boe solutions , leaving the side walls and the 5 mm region of the gan surface edge and the bottom surface edge of si substrate . at last , a composite substrate as shown in 17 d is obtained after surface cleaning , which includes a layer of 400 μm thick mono - crystalline si substrate 7 , bonded with a layer of 50 μm thick gan mono - crystalline 1 through a van der waals force . the substrate has a 5 μm thick sio 2 protective layer 3 on the side walls and a portion of the gan surface and the bottom surface of si substrate , which is designed as the forth type of the design project described in the summary of the invention . a reflective layer of patterned structures 5 ′ is embedded in the gan mono - crystalline layer 1 and is at a 4 μm distance from the bonding layer . the patterned structures are cylindrical sio 2 structures spaced at a 3 μm period with a height of about 1 μm and a base diameter about 2 μm . embodiment 5 : a metal composite substrate comprising a sic substrate and a gan mono - crystalline layer bonded with pd — pd bonds in the first step , a 4 μm thick gan mono - crystalline epitaxial layer is grown on a 2 inch 430 μm thick sapphire substrate using mocvd technology well - known in the art . in the second step , a layer of 1 μm thick sio 2 thin film is grown on the surface of the gan mono - crystalline that has been grown using pecvd technology , and the sio 2 thin layer is then patterned with lithography and dry etched well - known in the art into periodic conical structures spaced by a period of about 3 μm , with a bottom diameter of 2 . 5 μm , a height of 1 μm , as shown in fig1 a . the gan surface is exposed in the space between the conical structures . the periodic structure can be used as a reflective layer . in the third step , gan is continuously grown on the above gan mono - crystalline that has prepared a reflective layer by hvpe technology well - known in the art , until the thickness of gan mono - crystalline reaches to 10 μm , as shown in fig1 b . in the fourth step , the gan surface of the above gan mono - crystalline grown and a 2 inch 400 μm thick si mono - crystalline substrate are bonded by 502 instant adhesive , using si substrate as a transfer and support substrate . and the sapphire substrate is then lifted off by laser lift - off technology well - known in the art , leaving gan mono - crystalline bonded on the si substrate , as shown in fig1 . in the fifth step , a 1 μm pd layer is deposited simultaneously on the gan surface of the gan mono - crystalline on the si substrate and the surface of 200 μm thick sic substrate . and then they are bonded together at 800 ° c ., under a pressure of 8 tons , for 15 minutes . after bonding , the 502 instant adhesive is carbonized at high temperature , which allows si substrate to separate from gan / sic composite substrate automatically . in the sixth step , a 500 nm thick sio 2 thin film protective layer is grown on the face , inverse and side of the substrate , then the side walls and the whole bottom surface of the sic substrate are protected by photoresist , the sio 2 thin film on the gan surface of the substrate is etched off using boe solutions , leaving the side walls and the whole bottom surface of the sic substrate . at last , a composite substrate as shown in fig1 is obtained after surface cleaning , which includes a layer of 200 μm thick sic mono - crystalline substrate 8 which is bonded with a layer of 10 μm thick gan mono - crystalline layer 1 by pd — pd bonds , wherein the bonding layer 4 of pd is 2 μm in thickness . the substrate has a 500 nm thick sio 2 protective layer 3 on the side walls and the whole bottom surface , which is designed as the fifth type of the design project described in the summary of the invention . a layer of patterned structures of reflective layer 5 ′ is embedded in the gan mono - crystalline layer 1 and is at a 4 μm distance from the bonding layer 4 . the patterned structures are cylindrical sio 2 patterned layer structures spaced at a 3 μm period with a height of about 1 μm and a base diameter about 2 . 5 μm . embodiment 6 : a composite substrate comprising a alsi substrate and a gan mono - crystalline layer bonded with au — au bonds in the first step , a 6 μm thick gan mono - crystalline epitaxial layer is grown on a 2 inch 430 μm thick sapphire substrate using mocvd technology well - known in the art . in the third step , a layer of 1 μm thick sio 2 thin film is grown on the surface of the above gan mono - crystalline layer that has been grown by pecvd technology , and the sio 2 thin layer is then patterned with lithography and dry etched well - known in the art into periodic conical structures spaced by a period of 3 μm , with a bottom diameter of 2 μm , a height of 1 μm , as shown in fig1 a . the gan surface is exposed in the space between the conical structures . the periodic structure can be used as a reflective layer . in the fourth step , gan is continuously grown on the above gan mono - crystalline layer that has prepared a reflective layer by hvpe technology well - known in the art , until the thickness of the gan mono - crystalline layer reaches to 10 μm , as shown in fig1 b . in the fifth step , a 1 μm au layer is deposited simultaneously on the gan surface of the sapphire substrate / gan mono - crystalline layer and the surface of 200 μm thick alsi substrate . and then they are bonded together at 300 ° c ., under a pressure of 5 tons , for 15 minutes . in the sixth step , the sapphire substrate is lifted off by laser lift - off technology well - known in the art , leaving a composite substrate structure with gan / alsi bonded . in the seventh step , a 500 nm thick sio 2 thin film protective layer is grown on the face , inverse and side of the substrate , then the side walls and the whole bottom surface of the alsi substrate and the 2 mm area of the gan surface edge are protected by photoresist , the sio 2 thin film on a portion of the gan surface of the substrate is etched off using boe solutions , leaving the side walls and the whole bottom surface of the alsi substrate and the 2 mm region of the gan surface edge . at last , a composite substrate as shown in fig1 is obtained after surface cleaning , which includes a layer of 200 μm thick alsi mono - crystalline substrate 9 with a al : si mass ratio of 30 : 70 . the alsi mono - crystalline substrate is bonded with a layer of 10 μm thick gan mono - crystalline layer 1 by au — au bonds , wherein the bonding layer 4 of au is 4 μm in thickness . the substrate has a 500 nm thick sio 2 protective layer 3 on the side walls and the whole bottom surface and the 2 mm region of the gan surface edge , which is designed as the sixth type of the design project described in the summary of the invention . a layer of patterned structures of reflective layer 5 ′ is embedded in the gan mono - crystalline layer and is at a 4 μm distance from the bonding layer 4 , the patterned structures are cylindrical sio 2 structures spaced at a 3 μm period , with a height of about 1 μm and a base diameter about 2 μm . embodiment 7 : a metal composite substrate without reflective layer comprising a wcu metal substrate and a gan mono - crystalline layer bonded with au — au bonds in the first step , a 4 μm thick gan mono - crystalline epitaxial layer is grown on a 2 inch 430 μm thick sapphire substrate using mocvd technology well - known in the art . in the second step , gan is grown continuously on the gan mono - crystalline using technology well - known in the art , until the thickness of the gan mono - crystalline reaches to 10 μm . in the third step , the gan surface of the gan mono - crystalline that has been grown and a 2 inch 400 μm thick si mono - crystalline substrate are bonded with 502 instant adhesive , using the si substrate as a transfer and support substrate , and the sapphire substrate is then lifted off by laser lift - off technology well - known in the art , leaving gan mono - crystalline bonded on the si substrate . in the fourth step , a 1 μm au layer is deposited simultaneously on the gan surface of gan mono - crystalline on the si substrate and the surface of wcu alloy substrate , and then they are bonded together at 300 ° c ., under a pressure of 5 tons , for 15 minutes . after bonding , the 502 instant adhesive is carbonized at high temperature , which allows si substrate to separate from gan / wcu composite substrate automatically . in the fifth step , a 500 nm thick sio 2 thin film protective layer is grown on the face , inverse and side of the substrate , then the side walls and the whole bottom surface of the wcu substrate and the 2 mm area of the gan surface edge are protected by photoresist , the sio 2 thin film on a portion of the gan surface of the substrate is etched off using boe solutions , leaving the side walls and the whole bottom surface of the wcu substrate and the 2 mm region of the gan surface edge . at last , a composite substrate as shown in fig2 is obtained after surface cleaning , which includes a 150 μm thick wcu alloy metal substrate 2 with a w : cu mass ratio of 15 : 85 . the wcu alloy metal substrate and a layer of 10 μm thick gan mono - crystalline 1 are bonded with au — au bonds , wherein the bonding layer 4 of au is 2 μm in thickness . the substrate has a 500 nm thick sio 2 protective layer 3 on the side walls and the whole bottom surface and the 2 mm region of the gan surface edge , which is designed as the sixth type of the design project described in the summary of the invention .