systems and methods for generating reference voltages are provided . some embodiments can potentially reduce power consumption and / or compensate for charge injection effect . as such , some embodiments may be well suited for use in display systems , such as panel displays . in this regard , reference is made to fig3 which depicts an embodiment of an integrated reference voltage generating circuit 30 . the integrated reference voltage generating circuit 30 includes a resistor circuit 32 , switches sw 1 - sw 4 , resistors r 1 - r 4 , voltage sources vcc and vss , and a control circuit 34 . the power sources vcc provide higher voltages then the power sources vss . the resistor circuit 32 includes a plurality of dividing resistors rd 1 - rd 63 coupled in series . the switch sw 1 is coupled between node c of the resistor circuit 32 and the power source vss , the switch sw 2 is coupled between node c of the resistor circuit 32 and the power source vcc , the switch sw 3 is coupled between node d of the resistor circuit 32 and the power source vss , and the switch sw 4 is coupled between node d of the resistor circuit 32 and the power source vcc . the resistor r 1 is coupled between node c of the resistor circuit 32 and the switch sw 1 , the resistor r 2 is coupled between node c of the resistor circuit 32 and the switch sw 2 , the resistor r 3 is coupled between node d of the resistor circuit 32 and the switch sw 3 , and the resistor r 4 is coupled between node d of the resistor circuit 32 and the switch sw 4 . the integrated reference voltage generating circuit 30 provides reference voltages by voltage division of the resistor circuit 32 . in the embodiment shown in fig3 , the integrated reference voltage generating circuit 30 provides reference voltages v 0 - v 63 between two adjacent dividing resistors of the resistor circuit 32 the switches sw 1 - sw 4 are turned on or off based on signals generated by the control circuit 34 . the switches sw 1 - sw 4 can be made of transistors of different doping types . for example , the switches sw 1 and sw 3 can be n - type transistors , and the switches sw 2 and sw 4 can be p - type transistors , or vice versa . if the switches sw 1 and sw 3 are n - type transistors and the switches sw 2 and sw 4 are p - type transistors , the switches sw 1 and sw 3 are turned on ( closed circuit ) and the switches sw 2 and sw 4 are turned off ( open circuit ) when receiving a control signal of “ 1 ” ( high voltage level ), and the switches sw 1 and sw 3 are turned off and the switches sw 2 and sw 4 are turned on when receiving a control signal of “ 0 ” ( low voltage level ). with reference to fig4 , the operation of the integrated reference voltage generating circuit 30 will be described . in fig4 , φ 1 - φ 4 represent control pulses , each with two states : high and low . for ease of explanation , only reference voltages v 0 , v 1 , v 62 and v 63 are shown for illustrating the operation of the integrated reference voltage generating circuit 30 during the normal mode and the power saving modes . to prevent electroplating of ion impurity and image retention of the liquid crystal ( lc ) material , the polarity of the lc cell voltage is reversed on alternative intervals . the reference voltage v 0 and v 63 are both produced by coupling node c of the resistor circuit 32 to the power supply vcc and node d of the resistor circuit 32 to the power supply vss in a first driving period , and by coupling node c of the resistor circuit 32 to the power supply vss and node d of the resistor circuit 32 to the power supply vcc in a second driving period . each such driving period alternates in a fixed interval based on control pulses φ 1 and φ 2 , as shown in a timing chart of fig4 . in the normal display mode , the control circuit 34 provides a control pulse φ 4 of alternating high and low levels at the fixed interval and a control pulse φ 3 of high level , and therefore generates control pulses φ 1 and φ 2 for the switches sw 1 - sw 4 , as shown in fig4 . in the first driving interval , the resistor circuit 32 is coupled to power sources vcc and vss through the switches sw 4 and sw 1 , respectively . in the second driving interval , the resistor circuit 32 is coupled to power sources vcc and vss through the switches sw 2 and sw 3 , respectively . intermediate reference voltages v 1 - v 62 are generated by voltage division by the dividing resistors rd 1 - rd 63 of the resistor circuit 32 . during the power - saving mode , the control pulse φ 3 switches to low level and the control pulse φ 4 remains unchanged as in the normal mode , thereby generating the control signals φ 1 and φ 2 each having a high level . consequently , the switches sw 2 and sw 4 are turned off , disconnecting the resistor circuit 32 from the power source vcc . at the same time , the switches sw 1 and sw 3 are turned on , coupling the resistor circuit 32 to the power source vss . therefore , during the power - saving mode , no current flows through the resistor circuit 32 and the power consumption from the diving resistors can be reduced . although no current flows through the resistor circuit 32 , both ends of the resistor circuit 32 are still coupled to vss during the power - saving mode . in contrast to floating voltages of the prior art reference voltage generating circuit 10 , the voltage of the entire resistor circuit 32 is fixed to vss during the power saving mode thereby shutting down dac operation in a stable way . therefore , the integrated reference voltage generating circuit 30 can reduce power consumption without occupying large circuit space and without influencing the stability of the dac during power - saving mode . fig5 is a diagram showing an equivalent circuit of a pixel 50 . the pixel 50 includes a tft for turning on and off the pixel 50 , a storage capacitor cst for data storage , and a liquid crystal capacitor clc representing the capacitance of the liquid crystal material . data sent to the pixel 50 is stored in the capacitors cst and clc . the parasitic capacitance of the pixel 50 is represented by a parasitic capacitor cgd . a signal from a gate line turns on the tft , allowing data sent from a data line to be stored in the capacitors cst and clc . usually reference voltages generated by an integrated reference voltage generating circuit are sent to a dac , which in turn selects a voltage from the reference voltages and sends the selected voltage to the data line . the charge - injection effect is a phenomenon of level change caused by stray capacitance represented by the parasitic capacitor cgd . in this regard , fig6 is a diagram illustrating the charge - injection effect . in fig6 , vgate represents the voltage sent to the gate line , vpixel ( dashed line ) represents the ideal voltage obtained across the capacitors cst and clc if a voltage of vp is sent to the data line and vpixel ′ represents the actual voltage obtained across the capacitors cst and clc if a voltage of vp is sent to the data line . due to charge - injection effect , vpixel ′ differs from vpixel in that it suffers a voltage drop δvp , potentially causing loss of data stored in the capacitors cst and clc . the voltage drop δvp is represented as follows : embodiments of an integrated reference voltage generating circuit , such as circuit 30 , can potentially compensate for the charge - injection effect using the resistors r 1 - r 4 . based on capacitance of the capacitors cst , clc and cgd , the voltage drop δvp can be calculated . through the resistors r 1 - r 4 , different voltages can therefore be provided at both ends of the resistor circuit 32 for compensating for the voltage drop δvp . the resistance of the resistors r 1 - r 4 depends on the value of δvp . in the integrated reference voltage generating circuit 30 of the present invention , the resistors r 1 and r 4 have the same resistance , and the resistors r 2 and r 3 have the same resistance . fig7 is another embodiment of an integrated reference voltage generating circuit 70 . the integrated reference voltage generating circuit 70 includes a resistor circuit 32 , switches sw 1 - sw 4 , resistors r 1 - r 4 , voltage sources vcc and vss , and a control circuit 34 . the power sources vcc provide higher voltages then the power sources vss . the resistor circuit 32 includes a plurality of dividing resistors rd 1 - rd 63 coupled in series . notably , the integrated reference voltage generating circuit 70 differs from the prior art voltage generating circuit 10 , at least in one respect , in that it includes resistors r 1 - r 4 for compensating for the charge - injection effect . fig8 is a schematic diagram of an embodiment of a display system 80 incorporating embodiments of integrated reference voltage generating circuit . the display system 80 of fig8 includes mux devices 81 and 82 , a buffer 83 , a control module 84 , a timing controller 85 , a dac 87 and a reference generating circuit 89 . the reference generating circuit 89 could be configured as the integrated reference generating circuits 30 and 70 shown in fig3 and 7 , for example , for providing reference voltages to the dac 87 . based on signals sent from the control module 84 , the mux device 81 selects from partial display mode input data , 8 - color mode input data or normal mode input data as output data . when operating in normal mode , the reference generating circuit 89 performs voltage division and provides the dac 87 a plurality of reference voltages . the mux device 81 then selects the normal mode input data having been processed by the dac 87 and the buffer 83 as the output data . when operating in power - saving modes , such as partial display mode and 8 - color mode , the resistor circuit adopted in the reference generating circuit 89 either has both ends coupled to a power source ( such as when using the integrated reference generating circuits 30 ) or disconnected from a power source ( such as when using the integrated reference generating circuits 70 ). the mux device 81 then selects the partial display mode input data or the 8 - color mode input data as the output data . integrated reference voltage generating circuits can potentially occupy less circuit space than prior art structures . those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention . accordingly , the above disclosure should be construed as limited only by the metes and bounds of the appended claims .