the preferred embodiment of the present invention and its advantages are best understood by referring to fig1 through 6 of the drawings . according to one embodiment of the present invention , a semiconductor having enhanced acceptor activation is disclosed . the semiconductor comprises a ternary semiconductor structure ( i . e ., a three - material semiconductor ) whose composition varies spatially on a microscopic scale and that is doped with either an acceptor or donor impurity ( i . e , p - type or n - type ). fig1 ( a )-( c ) are graphs illustrating spatially varying compositions of semiconductors according to two embodiments of the present invention . the graphs illustrate the variations in the composition of a ternary semiconductor having a generic chemical formula a x b 1 - x c , where a and b may be selected from group iiia and c may be selected from group va . the subscript x is the chemical composition of the material . for example , if x = 0 %, the resulting material is bc , and if x = 100 %, then the resulting material is ac . examples of such semiconductor alloys are al 2 ga 1 - x n and ga x in 1 - x n . the bandgap varies with the composition x of the semiconductor ; thus , the bandgap which separates the valence band and the conduction band varies in space . in fig1 ( a ), a graph illustrating a varying concentration of element a in a material is given . the concentration of a varies in only one direction , the x - direction . more specifically , as shown in the graph , the concentration of a varies between 0 - 10 % as the position along the x - axis varies . a structure having the concentration illustrated in fig1 ( a ) may be fabricated by any of a number of known techniques . for example , epitaxy , i . e ., the growth of crystine semiconductor on a substrate , may be used . organo - metallic vapor phase epitaxy ( omvpe ) is one preferred method for fabricating gan and other iii - v semiconductor materials . in this embodiment , the composition of the structure is varied by , for example , periodically changing the precursor compounds flowing into the reactor . other fabrication methods may also be used . the composition of a structure may also vary along two spatial dimensions . fig1 ( b ) illustrates a ternary semiconductor having a structure in which the concentration of the a component varies along two spatial dimensions . the concentration of a varies in both the x - direction and in the y - direction . more specifically , as shown on the graphs in fig1 ( c ), the concentration of a varies between 0 - 10 % as the position along the x - or y - axis varies . the structure of fig1 ( b ) may be produced according to any known method . one method of fabrication is to start with the growth of a structure that has an composition that varies in one - dimension , e . g ., the structure shown in fig1 ( a ). after the one - dimensional growth , trenches may be etched into the epitaxial film . subsequent to the etching , the trenches are regrown ( or &# 34 ; filled &# 34 ;) with a superlattice , such as al x ga 1 - x n / gan or ga x in 1 - x n / gan , whose period is phase - shifted with respect to the first deposition . by doing so , a two - dimensional variation of the composition can be achieved . the composition may vary periodically , with a typical period between 40 and 400 å , or it may vary non - periodically . it should be pointed out that the etching and regrowth are accomplished in such a way to help ensure the composition does not vary abruptly . that is , the composition is smoothly graded . a structure having a composition that varies in three dimensions may also be used . such a structure can be fabricated by methods known in the art . for example , leon et al . disclose a method of self - assembly fabrication . see leon et al ., &# 34 ; spatially resolved visible luminescence of self assembled semiconductor quantum dots ,&# 34 ; science , 267 , 1966 ( 1995 ). leon et al . uses self - organizing mechanisms occurring during crystal growth to grow superlattices in which the composition varies along three spatial dimensions . in order to form a semiconductor with enhanced acceptor activation according to the present invention , once the initial structure is established , the structure is doped . any known technique for doping may be used . in a preferred embodiment , doping during crystal growth is used to achieve the desired dopant concentration within the semiconductor described above . other doping techniques , such as implantation and diffusion of impurities , may also be used . as an example of the technique of doping a semiconductor having a non - abruptly varying composition according to the present invention , thin layers of algan are doped with acceptors . the thin algan layers are then surrounded by gan . normally , gan has acceptor levels 200 - 300 mev above the valance band edge . however , when algan is combined with gan , forming a heterostructure , the acceptor ionization energy is reduced . the acceptor levels in semiconductors are usually attached to the valence band . therefore , since there is a lower activation energy for acceptors , there will be a higher ionization probability in the heterostructure , and thus an enhanced acceptor activation . the compositional modulation and doping results in a n - or p - type doped semiconductor alloy whose chemical composition varies . since the two semiconductors forming the alloy ( e . g ., gaas and aln form the alloy al x ga 1 - x n ) have a different bandgap energy , the bandgap energy of the alloy varies according to the composition . the variation of the chemical composition and the resulting variation of the bandgap energy results in a higher electrical activation of the n - or p - type doping impurities with which the semiconductor is doped . an example of a band diagram of a uniformly doped , composition - modulated semiconductor structure is shown in fig2 ( a ). it is assumed that the acceptor effective bohr radius is much smaller than the period of the structure , so that the acceptor levels in the barriers are not influenced by adjacent wells and vice - versa . for an effective mass of m h *= 0 . 8 m o ( where m o is the electron mass in free space ), the effective bohr radius calculated for hydrogenic impurities is 6 å , i . e ., much smaller than the period of the superlattice . fig2 ( b ) schematically shows the free carrier concentration in the valence band . the hole concentration is modulated and follows the potential modulation of the valence band . the free carrier concentration along with the doping concentration for a semiconductor having a non - abruptly varying composition according to the present invention are shown in fig3 . the free carrier concentration reaches 10 18 cm - 3 in the wells demonstrating very high activation of the deep acceptors . the effective carrier concentration , defined as the arithmetic average over the period of the structure , is given by 5 × 10 17 cm - 3 . thus , the effective activation of the acceptor impurities is 50 %, which is nearly a factor of ten higher than the concentration of a homogenous ( unmodulated ) semiconductor with the same materials parameters , where a free carrier concentration inferred from eq . ( 1 ) is 5 . 5 × 10 16 cm - 3 , corresponding to an activation of only 6 %. the higher doping activation in the modulated structure will result in higher conductivity , in particular , for transport in the planes of the modulated layers . due to the compositional grading , the conductivity normal to the superlattice plane will also be strongly enhanced . according to the present invention , very high electrical activation of deep acceptors can be achieved , if the acceptor energy levels in the barriers are energetically close to the valence band states in the wells . this condition may be written as where e 0h is the energy of the lowest quantized state relative to the top of the valence band , ( e f - f 0h ) is the band filling of the valence band states , and e dipole is the energy due to the polarization of the material ( band bending ). the latter energy is given by poisson &# 39 ; s equation : ## equ2 ## where z p is the period of the composition modulation in the structure . this period is chosen small enough to make band bending effects negligible and large enough ( well thickness & gt ; 30 å for m h *= 0 . 8 m c ) to make confinement effects negligible . the acceptor activation efficiency is defined as ## equ3 ## the efficiency approaches unity for large barriers and narrow wells if the condition of eq . ( 2 ) is fulfilled . efficiencies of at least 85 % may be achieved for asymmetric structures with a barrier - to - well width ratio of 8 : 1 . this activation efficiency corresponds to an increase by more than a factor of ten when compared to an unmodulated structure . in an embodiment where the structures uniformly doped , diffusion of impurities is irrelevant assuming that the diffusion coefficient in the barriers and wells is the same . use of graded structures according to embodiments of the present invention minimizes the ohmic resistance for transport across the barriers . the curvature of the graded region may be chosen in such a way so that the electrostatic depletion potential of ionized acceptors in the barriers is similar to the valence band modulation caused by the compositional modulation . this results in low resistances for transport across the barriers . in one embodiment , the grading may be parabolic . in another embodiment , the grading may be sinusoidal . other continuous , non - abrupt gradings may also be used . an example of the calculated free carrier concentration of free parabolically graded structures are shown in fig4 . the magnitude of the valence band modulation is δe v = 100 , 200 , and 300 mev . the structure has a period of z p = 440 å . fig4 shows free carrier peak concentrations as high as ≈ 10 18 cm - 3 for the largest band modulation . an example of the effective free carrier concentration of the parabolically graded structure is shown in fig5 for three different band modulations . the carrier concentration of the unmodulated structure is shown for comparison . for the highest band modulation ( δe v = 300 mev ), a carrier concentration 3 . 6 times higher than normal is obtained . an example of the band modulation of the parabolically graded structure with δe v = 200 mev is shown in fig6 . both the band modulation and the modulation with and without the reduction by the electrostatic dipole potential are shown . the modulation of the concentration of ionized acceptors and holes , accumulated in the valence band maxima , lead to a reduction of the valence band modulation . the residual modulation is approximately 115 mev . if the dipole energy becomes comparable to the magnitude of the band modulation , a decrease in the acceptor activation results . while the invention has been particularly shown and described by the foregoing detailed description , it will be understood by those skilled in the art that various other changes in form and detail may be made without departing from the spit and scope of the invention .