fig3 is a diagram illustrating a precharging method in accordance with an embodiment of the present invention . referring to fig3 , the present invention is composed of a weak precharge circuit 420 and a strong precharge circuit 440 . the weak precharge circuit 420 includes a plurality of circuit blocks 420 a , 420 b , 420 c , 420 d , 420 e , . . . , 420 m connected to each pair of bit lines and the strong precharge circuit 440 is composed of one circuit block connected to the weak precharge circuit 420 . when the mth pair of bit lines is selected and activated , the mth weak precharge block 420 m is connected to the strong precharge circuit 440 to sense and amplify data of the mth pair of bit lines through a sensing circuit connected to the strong precharge circuit 440 . the first through ith weak precharge blocks 420 a through 420 l connected to inactivated bit line pairs , i . e ., bit line pairs other than the activated mth bit line pair , are not connected to the strong precharge circuit 440 and respectively equalize the inactivated bit line pairs . when the inactivated bit line pairs are equalized to a voltage level lower than the power supply voltage level vdd , which is a precharge voltage level , precharge driving capability is reduced during the following precharge operation so as to reduce the peak current of the memory device . fig4 is a circuit diagram of a memory device including a precharge circuit according to an embodiment of the present invention . referring to fig4 , the memory device 400 includes a memory cell block 410 , a weak precharge block 420 , a column selector 430 , a strong precharge block 440 , a precharge driver 450 , a write driver 460 , a data input / output circuit 470 , and a weak equalizing signal generator 480 . the memory device 400 is distinguished from the conventional memory device 100 shown in fig1 at least by the construction and operation of the weak precharge block 420 and weak equalizing block 480 . the other components 410 , 430 , 450 , 460 and 470 are the same as those included in general memory devices and their operations are well - known to those of ordinary skill in the art . thus , detailed descriptions of the operations of these components are omitted . the weak precharge block 420 includes weak precharge transistors 421 , 422 , 423 and 424 and equalizing transistors 425 and 426 connected to bit lines and complementary bit lines bl 0 and / bl 0 , . . . , blm and / blm . while the bit line bl 0 and complementary bit line / bl 0 are precharged according to the weak precharge transistors 421 and 422 connected to the bit line bl 0 and complementary bit line / bl 0 in this embodiment , alternatively , as shown in fig6 , a transistor 601 , 602 whose gate is connected to a precharge signal precharge can be additionally included between the bit line bl 0 and complementary bit line / bl 0 in order to precharge the bit line bl 0 and complementary bit line / bl 0 . the weak precharge transistors 421 and 422 are connected between the power supply voltage vdd and the first bit line bl 0 and the first complementary bit line / bl 0 , respectively , and their gates are connected to a precharge signal precharge transmitted through the precharge driver 450 . the weak precharge transistors 423 and 424 are connected between the power supply voltage vdd and the mth bit line blm and the mth complementary bit line / blm , respectively , and their gates are connected to the precharge signal precharge delivered through the precharge driver 450 . the weak equalizing transistor 425 is connected between the first bit line bl 0 and the first complementary bit line / bl 0 and its gate is connected to a first weak equalizing signal generated by the weak equalizing signal generator 480 . the weak equalizing transistor 426 is connected between the mth bit line blm and the mth complementary bit line / blm and its gate is connected to the mth weak equalizing signal provided by the weak equalizing signal generator 480 . the weak precharge transistors 421 and 422 precharge the first bit line bl 0 and the first complementary bit line / bl 0 to the power supply voltage level vdd in response to the precharge signal precharge . the weak precharge transistors 423 and 424 precharge the mth bit line blm and the mth complementary bit line / blm to the power supply voltage level vdd in response to the precharge signal precharge . here , transistors 441 , 442 and 443 of the strong precharge circuit 440 precharge a read bit line bl_r and a complementary read bit line bl_r to the power supply voltage level vdd in response to the precharge signal precharge . the read bit line bl_r and the complementary read bit line / bl_r are respectively connected to the bit lines and complementary bit lines bl 0 , / bl 0 , blm and / blm of the memory cell block 410 through transistors 431 , 433 , 435 and 437 of the column selector 430 . memory cell data delivered to the read bit line and complementary read bit line is sensed and amplified through a sensing circuit ( not shown ) in the data input / output circuit 470 . the weak equalizing transistor 425 equalizes the first bit line bl 0 and the first complementary bit line / bl 0 to the same voltage level in response to the first weak equalizing signal w_eq 0 . the weak equalizing transistor 426 equalizes the mth bit line blm and the mth complementary bit line / blm to the same voltage level in response to the mth weak equalizing signal w_eqm . when the bit lines and complementary bit lines bl 0 , / bl 0 , blm , and / blm are equalized , their voltage levels before equalization become a specific voltage level through the weak equalizing transistors 425 and 426 . this specific voltage level is lower than the power supply voltage level vdd . accordingly , the bit lines and complementary bit lines bl 0 , / bl 0 , blm , and / blm are weakly precharged in comparison with the precharge of the power supply voltage level vdd in the strong precharge circuit 440 . the weak equalizing signal generator 480 selectively generates the weak equalizing signals w_eq 0 , . . . , w_eqm in response to the precharge signal precharge provided by the precharge driver 450 and column decoding signals mux 1 , mux 2 , . . . , muxm . the first weak equalizing signal w_eq 0 is generated as a logic low level signal when the first column decoding signal mux 1 is inactivated to the logic low level to turn on the weak equalizing transistor 425 . that is , the first column decoding signal mux 1 having the logic low level de - selects the first bit line pair bl 0 and / bl 0 , which means that the inactivated first bit line pair bl 0 and / bl 0 is weakly precharged while being equalized through the weak equalizing transistor 425 . the mth weak equalizing signal w_eqm is generated as a logic low level signal when the mth column decoding signal muxm is at the logic low level to turn on the weak equalizing transistor 426 . accordingly , an inactivated pair of bit lines blm and / blm is equalized through the weak equalizing transistor 426 and weakly precharged . also , the first through mth weak equalizing signals w_eq 0 , . . . , w_eqm are generated as logic low level signals when the precharge signal precharge is at logic a low level to turn on the weak equalizing transistors 425 and 426 . even the weak precharge transistors 421 , 422 , 423 and 424 are turned on in response to the logic low level precharge signal precharge . accordingly , the bit lines and complementary bit lines bl 0 , / bl 0 , blm , and / blm are precharged to the power supply voltage level vdd . in addition , the transistors 441 , 442 and 443 of the strong precharge circuit 440 are turned on by the logic low level precharge signal so that the read bit line pair is precharged to the power supply voltage level vdd . if the width to length ( w / l ) ratio of the weak precharge transistors 421 , 422 , 423 and 424 and weak equalizing transistors 425 and 426 is x and the width to length ( w / l ) ratio of the transistors 441 , 442 and 443 of the strong precharge circuit 440 is y , the relationship of x and y is set to be x & lt ; y . specifically , the ratio of width to length of the weak precharge transistors 421 , 422 , 423 and 424 and weak equalizing transistors 425 and 426 is smaller than the ratio of the width to length of the transistors 441 , 442 and 443 of the strong precharge circuit 440 . this is because , among components that cause power consumption during the bit line precharge operation , a load component corresponding to the gate capacitance of the precharge transistors causes more power consumption than a load component caused by the capacitance of the bit lines . the operation of the memory device 400 according to the weak precharging and equalizing method of the present invention is shown in fig5 . referring to fig5 , after the precharge signal precharge is activated from a logic low level to a logic high level , the first wordline wl 0 is activated from the logic low level to the logic high level . for convenience of description , it is assumed that the first column decoding signal mux 0 is activated to the logic high level so that data of the first memory cell 412 is transmitted to the first bit line bl 0 and the first complementary bit line / bl 0 . here , the other column decoding signals mux 1 , . . . , muxm are inactivated to the logic low level . reference numeral 400 denotes the operation waveform of the memory device of the present invention and 100 represents the operation waveform of the conventional memory device 100 shown in fig1 . the data of the memory cell 412 , which has been delivered to the selected , i . e ., activated , first bit line bl 0 and first complementary bit line . / bl 0 , is transmitted to the data input / output circuit 470 through transistors 431 and 433 of the column selector 430 , and then sensed and amplified in response to a logic high level cycle of a sensing signal sense , to evaluate the voltage difference between the first bit line bl 0 and the first complementary bit line / bl 0 . here , the inactivated mth bit line blm and mth complementary bit line / blm are provided with data of the mth memory cell 414 as the first wordline wl 0 is enabled but they maintain a nearly identical voltage level due to the weak equalizing transistor 426 . when the first bit line bl 0 and the first complementary bit line / bl 0 are deactivated in response to the logic low level of the precharge signal precharge , they are equalized to a voltage level lower than the power supply voltage vdd through the weak equalizing transistor 425 , and the first bit line and complementary bit line bl 0 and / bl 0 are precharged to the power supply voltage vdd through the weak precharge transistors 421 and 422 . in addition , the mth bit line blm and the mth complementary bit line / blm are precharged to the power supply voltage level vdd by the weak equalizing transistor 426 and weak precharge transistors 423 and 424 . referring to the operation waveform 100 of the conventional memory device , the voltage difference between the first bit line bl 0 and the first complementary bit line / bl 0 is evaluated based on data of the first memory cell 112 in response to activation of the first word line and the first column decoding signal . then , the precharge transistors 121 and 122 and equalizing transistor 125 ( referring to fig1 ) are turned on in response to activation of the precharge signal precharge to precharge the first bit line bl 0 and the first complementary bit line / bl 0 to the power supply voltage level vdd . the voltage difference between the mth bit line blm and the mth complementary bit line / blm is evaluated according to data of the mth memory cell 114 in response to the activation of the first wordline . subsequently , the precharge transistors 123 and 124 and equalizing transistor 126 are turned on according to the activation of the precharge signal precharge so as to precharge the mth bit line blm and the mth complementary bit line / blm to the power supply voltage level vdd . in the precharge operation according to the precharge signal precharge , precharge current i ( precharge ) depends on the voltage level of the mth bit line blm and the mth complementary bit line / blm that have been inactivated before the precharge operation . precharge current i ( precharge ) according to the present invention in which the inactivated mth bit line blm and mth complementary bit line / blm are equalized to a voltage level lower than the power supply voltage vdd and then precharged to the power supply voltage level vdd is smaller than the conventional precharge current i ( precharge ). this is because the conventional memory device requires higher driving capability for precharging the voltage difference between the inactivate mth bit line blm and mth complementary bit line / blm , which has been evaluated according to the data of the mth memory cell 114 , to the power supply voltage level vdd . since a reduction in the precharge current brings about a decrease in the entire operating current i ( vdd ) of the memory device 400 , the operating current waveform of the memory device 400 according to the present invention is less than the operating current waveform of the conventional memory device 100 shown in fig1 . while the present invention has been particularly shown and described with reference to exemplary embodiments thereof , it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims .