now , the present invention will be specifically described in conjunction with an embodiment thereof . as illustrated in fig1 - 3 , the resin - encapsulated semiconductor device of this embodiment in which the semiconductor chip of a 4mdram is mounted is such that an insulator film 2 is bonded with an adhesive 3 onto the inner lead portions 15 of a lead frame 1 , which does not have tabs , in a reversed state , that the semiconductor chip 4 of the 4mdram is pellet - fixed onto the insulator film 2 by a pellet fixing thermosetting adhesive 4a with its principal surface side set as a bonding surface , and that the resultant structure is reversed , whereupon the inner lead portions 15 and the semiconductor chip 4 are electrically connected by pieces of bonding wire 5 . thus , the inner lead portions 15 of the lead frame 1 , which does not have tabs , are arranged on the principal surface of the semiconductor chip 4 of the 4mdram through the insulator film 2 . after the structure in this state is encapsulated with a resin sealant 6 , the outer lead portions 14 of the lead frame 1 are worked into a predetermined shape . as to the size of the package of the device , the dimension of each shorter lateral side is 7 . 62 mm ( 300 mils ), and that of each longer lateral side is 16 . 9 mm ( 675 mils ). as shown in fig1 the lead frame 1 is formed of a thin flat plate ( having a thickness of , for example , 0 . 25 mm ) which is made of an iron - based ( iron or its alloy ) material such as 42 alloy or kovar or a copper - based ( copper or its alloy ) material such as phosphor bronze or tough - pitch copper . the semiconductor chip 4 forms the 4mdram . as shown in fig4 memory mats 20 are provided at the central part of this semiconductor chip , y decoders 21 are provided at the x - directional central part thereof and in parallel with a y - axis so as to extend along the memory mats 20 , and word drivers 22 and x decoders 23 are provided at the y - directional central part thereof and in parallel with an x - axis so as to extend along the memory mats 20 . in addition , at one end part of the semiconductor chip in the lengthwise direction thereof , a ras - group circuit 24 , a cas - group / we - group circuit 25 and an x / y address buffer 26 are respectively provided , main amplifiers 27 are provided inside them , and d out buffers 28 are provided at the corners of the end part . at the other end part , there are provided a ras - group circuit 24 , an x address buffer 29 , an x generator 30 , an x / y generator 31 , a y address buffer 32 and an shr / pc generator 33 . additionally , sense amplifiers / common inputs and outputs / common sources 34 are provided at the right side end part of the semiconductor chip in the widthwise direction thereof , and the upper terminals 20a of the memory mats 20 are provided at the upper end of the left side end part thereof , while the lower terminals 20b of the memory mats 20 are provided at the lower end . as shown in fig5 the electrodes ( pads ) a0 - a10 , electrodes ( pads ) d in , we , ras , nc , v ss , v cc , q ( d out ) and cas and electrodes ( pads ) p1 - p6 of various elements provided in the semiconductor chip 4 are arranged at both the end parts of the semiconductor chip 4 in the lengthwise direction thereof . the pads a0 - a10 are for bonding signal lines , the pad d in is for a data input signal , the pad we is for the we circuit of the cas group / we group circuit 25 , the pad ras is for the ras group circuit 24 , the pad v ss is for a power source voltage v ss , pads i / o1 - i / o4 ( refer to fig1 ) are for the d out buffer 28 , and the pad cas is for the cas group circuit of the cas group / we group circuit 25 . further , the pads p1 - p6 are probing pads which are used in the tests of electrical characteristics . as the size of the semiconductor chip 4 , the dimension ( s ) of each of the shorter sides is 5 . 91 mm , and the dimension ( l ) of each longer side is 15 . 22 mm . the corresponding inner leads are electrically connected to the respective pads by the bonding wire pieces 5 . in this regard , as shown in fig1 by way of example , a bonding wire piece 5a for electrically connecting the pad ras and the inner lead ras is laid so as to extend across a bonding wire piece 5b for electrically connecting the pad a9 and the inner lead a9 . here , as shown in fig6 the bonding wire piece 5b has the loop height thereof made lower than that of the bonding wire piece 5a so as to prevent a short - circuit therebetween . changing of the loop heights in this manner is utilized in the case of using one sort of semiconductor chip which is common for different packages . for example , in a case where a chip having heretofore been applied to a dip ( dual in - line package ) is to be mounted on an soj ( small out - line j - bend package ), the pad arrangements of the packages are partly different , and hence , the wire loop heights need to be changed for effecting the cross wire bonding in order to connect some pads and the inner lead portions 15 . now , a process for assembling the resin - encapsulated semiconductor device of this embodiment will be described . as seen from fig1 thru 3 , first of all , the insulator film 2 made of a polyimide type resin is bonded with the adhesive 3 onto the inner lead portions 15 of the lead frame 1 , which does not have tabs , in the reversed state . a polyimide type resin film having a thickness of 125 μm is used as the insulator film 2 . used as the adhesive 3 is , for example , a multilayer adhesive in which , as shown in fig7 a thermoplastic binder 3a of polyether amide imide or the like and a thermosetting polyimide type resin binder 3b of polyimide pyromellite , polyketone imide or the like are stacked in this order from the side of the inner lead portions 15 . the principal surface side of the semiconductor chip 4 is pellet - fixed onto the insulator film 2 by the pellet fixing thermosetting adhesive 4a . the pellet fixing thermosetting adhesive 4a consists of , for example , a multilayer adhesive in which a nonconductive paste material , e . g ., silicone rubber , epoxy rubber , epoxy type resin or polyimide type resin is stacked on a thermosetting polyimide type resin binder of polyimide pyromellite , polyketone imide or the like . subsequently , the bonding terminal portion 15a of each inner lead portion 15 and the corresponding pad on the principal surface of the semiconductor chip 4 subjected to the pellet fixing operation are electrically connected by the piece of bonding wire 5 . by way of example , gold ( au ) wire having a diameter of 30 μm is used as the bonding wire 5 . regarding the wire bonding , by way of example , the bonding wire piece 5 and each of the pads a0 - a10 on the semiconductor chip 4 are connected by wedge ball bonding . likewise , the bonding wire piece 5 and the bonding terminal portion 15a of the inner lead portion 15 are connected ( joined ) by thermocompression employing ultrasonic vibrations . that part of the bonding terminal portion 15a of the inner lead portion 15 which is to be bonded is plated with silver ( ag ). in electrically connecting the semiconductor chip 4 and the inner lead portions 15 by the use of the bonding wire pieces 5 , the bonding positions ( 2 points ) of the pads on the side of the semiconductor chip 4 are recognized for the purpose of determining coordinates , whereupon the wire bonding is automatically carried out . when the wire bonding has ended , the injection port of the cavity of a resin sealant injection apparatus and the gate position 16 of the lead frame 1 , which does not have a tab , are positioned , and thereafter , the resin sealant 6 such as epoxy type resin is poured into the cavity and then molded . the outer lead portions 14 are thereafter worked into the predetermined shape . thus , the resin - encapsulated semiconductor device is now completed . the lead frames 1 are juxtaposed in a unidirectional array to form a multiple lead frame though not shown . the multiple lead frame is unitarily formed in such a way that the single sheet of the lead frame material mentioned before is subjected to a proper expedient such as punching press work or etching process for providing individual lead frame portions . as shown in fig1 each of the lead frames 1 is so shaped that the leads thereof enter from the longer lateral sides of the oblong package and extend to the shorter sides thereof . in particular , the leads ( pins v ss , a4 , v cc and i / o1 ) entering from the four corners of the package enter from substantially the same relative positions and which positions are in line with the positions of the shorter lateral sides associated therewith of the semiconductor chip 4 , and the corresponding inner leads extend toward the center of the semiconductor chip 4 and further to positions near the corresponding bonding pads arranged on the shorter lateral sides of the semiconductor chip 4 . in addition , since the leads which are more centrally disposed on the chip 4 also have longer lengths which extend within the package , they are more liable to come off because poor adhesion thereof with the sealing resin . in order to prevent such a drawback , the leads are formed with lugs 40 at those positions of the inner leads which are comparatively close to the side surfaces of the chip 4 . as understood from the above description , according to this embodiment , the inner lead portions 15 of the lead frame 1 , which does not have tabs , are arranged on the principal surface of the semiconductor chip 4 through the insulator film 2 , whereby a space for arranging the inner lead portions 15 around the semiconductor chip 4 as in the prior art is dispensed with , and the semiconductor chip 4 which is larger to that extent can be mounted . in addition , owing to the arrangement of the inner lead portions 15 of the lead frame 1 on the principal surface of the semiconductor chip 4 , the inner lead portions 15 can be utilized as a wiring layer . that is , it is possible to execute the operation of wire bonding from the desired positions of the semiconductor chip 4 to the inner lead portions 15 . this signifies that , when the inner lead portions 15 are considered as the wiring layer and the insulator film 2 as an inter - layer insulator film which is provided with through holes ( contacts ), wiring can be laid from any places location . all the inner leads and the pads are , furthermore , subjected to the wire bonding on the principal surface of the semiconductor chip 4 , whereby short - circuiting ( area shorting ) between the end parts of the semiconductor chip 4 and the pieces of bonding wire 5 is basically avoided , and the wiring is facilitated . more specifically , since merely the insulator film 2 and the inner leads 15 , which pose no problem even when contact exists on the semiconductor chip 4 , attention may be paid only to the short - circuiting between the bonding wire pieces 5 . accordingly , the cross wire bonding is also permitted by adjusting only the loop heights of the bonding wire pieces 5 . thus , even a package of different sort such as an soj package , to which a different semiconductor chip 4 has been inevitably applied , can be manufactured using the common semiconductor chip 4 and by performing the cross wire bonding . the bonding wire pieces 5 , additionally can be made low and short and can also be readily bonded in parallel with the flowing direction of the sealing resin material 6 in the encapsulating operation thereof , so that the deformations of the bonding wire pieces 5 can be relieved . in addition , the arrangement of the pads of the semiconductor chip 4 can have its versatility sharply increased as compared with the same in the prior art . moreover , since the insulating film made of the polyimide resin is stuck on the principal surface of the semiconductor chip 4 , soft errors ascribable to alpha particles can be prevented without requiring a separate step of chip coating . that is , the number of steps required is reduced .