in order to facilitate a clear understanding of the present invention , reference will be made to fig1 - 4 , which are cross - sectional views to illustrate a diagrammatic representation of the steps of forming structures according to different embodiments of the present invention . fig1 illustrates a structure 100 in which a silicon substrate 102 supports a cmos transistor . in this structure , there is provided a gate dielectric layer 104 bounded by spacers 106 , 106 made of an insulating material . on substrate 102 , bounding and on top of the gate conduction structure is provide a silicide layer 108 . using the surface of gate dielectric 104 as a base , by controlling a deposition parameter , e . g ., temperature , a polysilicon layer is formed by decomposition of a gas such as silane , disilane , or dichlorosilane or the like , in known manner , to produce a first region 110 that has crystals of a relatively large first grain size . formed contiguously thereon , by further control exercised over one or more deposition parameters , is a second region 112 containing crystals of a relatively smaller grain size . the result is that the gate conductor is formed of the same crystalline polysilicon material but comprises multiple regions characterized by different grain sizes , with the regions formed contiguously and in the same manufacturing process . formation of the structure as described has two advantages , compared to the prior art , in forming doped dual - work function polysilicon gate structures . the multi - region crystalline polysilicon gate structure is found to : ( a ) maximize dopant activation near the gate dielectric 104 ; and ( b ) independently control the resistance of the polysilicon above that first region , i . e ., in the upper small crystal size region 112 located further away from the gate dielectric 104 . in the structure according to this invention , dopant is most effectively activated in the larger crystal region 110 so that polysilicon depletion is minimized . by altering the deposition sequence , the smaller crystal region could be placed adjacent to the gate dielectric and the large crystal region further from the gate dielectric . in another aspect of this invention , the crystalline structure of the multi - region polysilicon is controlled to allow for improved functioning thereof as a gate conductor with low polysilicon depletion , and is also further controlled to provide a selected resistance which meets designed targets . as best understood with reference with fig2 , in order to create such a structure the bottom region of the crystalline polysilicon is deposited as required for activation to minimize polysilicon depletion , exactly as discussed above with reference to fig1 . then , for example per the structure 200 illustrated in fig2 , the uppermost region 214 of the polysilicon is deposited contiguous with the immediately underlying region 212 by using a different parameter value , e . g ., an increased pressure , so that the electrical resistance of the polysilicon in this third region will be significantly different . note that some of the same elements are provided with the same identifying numerals in these different structures , e . g ., substrate 102 , silicide 108 , 108 , etc ., for ease of reference . in summary , in the structure per fig2 , the multi - n region polycrystalline silicon comprises a first region 210 having an interface with dielectric layer 104 . this is followed by a second region 212 characterized by having relatively smaller crystal grain size , followed by a third region 214 contiguous with region 212 and characterized by having a larger crystal grain size . the function of this third region 214 is to modify the electrical resistance of the gate conductor . it is produced by suitable control exercised over a selected parameter , e . g ., pressure of a silane gas flow providing the silicon , during formation of the multi - region . another parameter , or more than one parameter relating to the silane gas flow , e . g ., pressure , temperature , or flow rate , may be altered as deemed appropriate . it is evident that by altering the deposition sequence , the larger and smaller grained regions may be deposited in any order desired . the upper portion of the gate conductor polysilicon may be consumed by silicide . the silicide layers 108 , 108 may comprise , for example , cobalt or titanium silicide . fig3 shows yet another variation 300 , namely one in which the polysilicon is deposited under conditions in which a selected parameter , e . g ., pressure , is varied in controlled manner so that as the depth of the deposit 302 increases the crystal grain size continuously changes . thus , in fig3 the polysilicon crystal grain size immediately adjacent to dielectric 104 is the largest and crystal grain size diminishes continuously with distance away from the interface of the polysilicon with dielectric layer 104 . it is again evident that by altering the deposition sequence the grain size could be made to increase with distance from the gate dielectric . fig4 in cross - sectional form illustrates the use of a multi - region polysilicon element , as taught herein , to form a doped polysilicon resistor structure 400 . in this structure , above insulating substrate 100 is provided a multi - region polysilicon structure as taught herein . a nitride layer 406 is provided to block consumption of the upper portion of the polysilicon 404 during silicide formation , so that the upper portion of the polysilicon resistor is not consumed , and so contributes to the resistivity of the entire structure . this allows for tailoring of the resistance value for the resistor . the resistor is completed by depositing a barrier nitride layer 408 and bpsg layer 412 . conventional tungsten contacts 410 , 410 may be employed as indicated . it will be appreciated from the above by persons of ordinary skill in the art that a multi - region polysilicon element , formed as described herein by simple control exercised over a key parameter , or even more than one deposition parameter , during the silicon deposition process , can provide a high versatility in use of the process in various applications . also claimed in this invention is the control of a flow of dopant gas to allow for creation of a layer of the multi - region polysilicon gate element which may , thereby , be doped or counter - doped in - situ . thus , for example , if a p - type in situ doping is performed during the last portion of the multi - region polycrystalline deposition , a polysilicon resistor of p - type will have relatively low resistance . in both n and p type fet devices , formation of the silicide 108 will consume the upper polysilicon region which is either doped or counter - doped by in - situ doping . furthermore , to facilitate a higher level of dopant activation , or to provide a break in the dopant distribution , in order to allow for either improved gate performance or op resistor tuning , a layer rich in carbon atoms or a region of silicon germanium may be deposited at an intermediary selected stage during the deposition of the multi - region polysilicon . this , also , is contemplated as being within the scope of the present invention . in summary , a readily adapted multi - region polysilicon structure can be formed , and modified to facilitate the manipulation of dopant materials and the like , by careful control exercised over one or more parameters affecting the regional growth of crystal grain size and / or composition during deposition of the polysilicon material . when the present invention is employed to form a doped polysilicon resistor , for example , per fig4 , the lower region of the polycrystalline silicon is deposited under conditions selected to minimize polysilicon depletion for the fet devices : for example , 710 ° c ., 40 torr , pressure 500 sccm silane flow . the upper region of the polysilicon gate is generally formed to include a region having a pre - determined electrical resistance to tailor the overall resistance of the polysilicon resistor . provided below is a table summarizing data indicative of the polysilicon deposition conditions necessary to obtain a specific electrical resistance value in ohm / square for polysilicon resistors ; deposited thickness = 200 nm , doped with 3 . 5e15 boron for p - type and 2 . 5 e15 arsenic for n - type polysilicon resistors . p - type polysilicon resistor pressure / sih4 flow 350 sccm 500 sccm 850 sccm 20 torr 214 40 torr 204 80 torr 200 174 156 n - type polysilicon resistor 20 torr 431 40 torr 417 80 torr 399 376 348 persons of ordinary skill in the art , upon understanding the invention as disclosed herein , may be expected to consider obvious variations and modifications of both the method and the structures taught herein . all such variations are considered to be comprehended within this invention which is limited solely by the claims appended below :