a silicon on insulator ( soi ) substrate is prepared . the silicon film is thinned to provide a structure suitable for full depletion operation of the resulting device . the thinning may be accomplished using thermal oxidation and oxide removal . an ion implant may be performed to adjust the threshold voltage of the resulting device . using photoresist to selectively etch silicon from the field region of the control area , which will later include the non - memory transistors . once the soi substrate is prepared , silicon dioxide is thermally grown to form a gate oxide layer . alternatively , the silicon dioxide is deposited to form a gate oxide layer . a gate layer is then deposited overlying the gate oxide layer . the gate layer may comprise polysilicon , silicon germanium , or other suitable material as sacrificial gate for memory transistors and the final gate electrodes for the non - memory transistors . the gate layer may be doped as either n + or p +. the gate layer may be formed to a thickness of between approximately 50 nm and 300 nm . a silicon dioxide hard mask layer is then deposited overlying the gate layer , followed by the deposition of a nitride hard mask layer overlying the silicon dioxide hard mask layer . both the silicon dioxide hard mask layer and the nitride hard mask layer may be formed to a thickness of between approximately 20 nm and 50 nm . although , silicon dioxide and nitride have been discussed as possible hard mask materials , other hard mask materials , which are suitable for selective etching , such as ti , tin , al 2 o 3 , may also be used a layer of photoresist is then deposited and patterned to provide protection for the gate areas , which will correspond to the word lines in the memory array structure . the nitride hard mask is etched , leaving the nitride hard mask over the gate areas . the layer of photoresist is then removed . fig1 shows a top view of an mfis ferroelectric memory array structure 10 during initial fabrication . another layer of photoresist 12 is deposited and patterned to provide protection for an active area . the nitride hard mask 14 is shown over the gate areas . referring now to fig2 and 3 . fig2 is a cross - sectional view taken along 2 — 2 of fig1 , and fig3 is a cross - sectional view taken along 3 — 3 of fig1 . using the combination of the photoresist 12 and the nitride hard mask 14 , etch through the silicon dioxide hard mask 16 , the gate layer 18 , the gate oxide layer 20 , and the silicon film 22 of the soi substrate , leaving an insulator 24 and the backing substrate 26 , if any , from the soi substrate 28 . this etch step will produce isolated islands of active area soi regions separated by regions of insulator 24 without overlying silicon film . the photoresist 12 should not be stripped at this point . if the photoresist 12 remains intact , it will be used as the mask to etch through the nitride hard mask 14 , the silicon oxide hard mask 16 , and the gate layer 18 , as shown in fig4 and 5 . any state - of - the - art p + ion implantation is then used to dope the exposed portions of the silicon film 22 through the gate oxide layer 20 to form p + regions 30 . for example , a boron ion implantation at an energy of between approximately 1 kev and 10 kev and dose of 5 × 10 14 / cm 2 to 5 × 10 15 / cm 2 may be used for this ion implantation . the photoresist 12 should be stripped following the p + implant . if the photoresist 12 was not sufficiently intact , it could be stripped and re - patterned . this may be less desirable as it does not provide as much self - alignment between etching steps . a layer of silicon dioxide 32 is then deposited , for example using cvd deposition . a partial etch back is then performed to remove silicon dioxide until nitride hard mask 14 is exposed . this etch back may be any dry etch process or cmp process or the combination of cmp followed by wet or dry etch process . this partial etch back will also expose the gate layer 18 where it is not covered by the nitride hard mask 14 , as shown in fig6 and 7 . the initial cvd deposition should be sufficiently thick that following the partial etch back a layer of silicon oxide between approximately 100 nm and 250 nm remains overlying the p + regions 30 . the exposed gate layer 18 is then etched using an anisotropic etch to remove it from regions not covered by the nitride hard mask 14 , as shown in fig8 and 9 . two ion implants are then performed . one is an n + source / drain ion implantation for forming the source / drain regions 34 and the other is a p + implant for the substrate region 36 . the sequence of these two implants is not critical , but each will require a mask step . one mask step to protect the areas outside the source / drain regions 36 during the n + implant , and the other to protect the source / drain regions and other areas during the p + substrate implant of the substrate region 36 . the n + region may be implanted using 5 × 10 14 / cm 2 to 5 × 10 15 / cm 2 of phosphorus ions or arsenic ions with an energy of between approximately 5 kev and 30 kev for phosphorous ions , or between approximately 10 kev and 60 kev for arsenic ions . the p + ion implantation is 5 × 10 14 / cm 2 to 5 × 10 15 / cm 2 at between 1 kev and 10 kev for boron ions . in an alternative embodiment , a raised source / drain structure ( not shown ) may be used . this can be accomplished by forming sidewalls , for example using oxide or nitride , and removing all oxide on the silicon film not covered by silicon oxide or a gate stack formed by the gate layer , the nitride hard mask and the silicon oxide hard mask . a selective epitaxial growth of between approximately 20 nm and 50 nm of silicon is then grown over the exposed silicon film . the p + and n + ion implantation of steps discussed above may then be performed to form the source / drain regions and the substrate region . another layer of oxide 38 is deposited to a thickness of between approximately 1 . 5 and 2 . 0 times higher than the distance from the top of the silicon film 22 to the top of the nitride hard mask 14 . the layer of oxide 38 is then polished , for example using cmp , until the top of the gate layer 18 is exposed as shown in fig1 and 11 . the remaining portions of the gate layer 18 are etched away along with the underlying regions of the gate oxide layer 20 . a layer of high - k dielectric material 40 , for example hfo 2 , zro 2 , hfalo 2 , zralo 2 , is deposited to a thickness of between approximately 3 nm and 50 nm , as shown in fig1 and 13 . a ferroelectric material is then deposited and planarized , for example using cmp , stopping at , or just beyond , the high - k dielectric material 40 to form ferroelectric gates 42 . the ferroelectric material may be pgo , pzt , sbt , sbo , sbto , sbtn , sto , bto , blt , lno or ymno 3 . top electrodes 44 , which may be pt or ir for example , are then formed to serve as word lines . a layer of silicon dioxide is then deposited and the first metallization is completed to provide contacts 45 to the top electrodes 44 , the bit contacts 46 and the substrate contact 48 . fig1 is top view of a mfis ferroelectric memory array structure . the cross - sections 12 — 12 and 13 — 13 correspond to fig1 and 13 respectively . the embodiment of the mfis ferroelectric memory array structure shown is a 2 × 3 memory array . each memory transistor , shown at 49 , has a drain 50 that serves as the bit output . each drain 50 is isolated . the memory transistors along a given word line has a common source 52 . as shown in this embodiment the memory transistors along adjacent word lines share the same common source 52 . the channels of the memory transistors along a given word line are formed in a common silicon island that corresponds to the remaining portions of the silicon film 22 , and are separated from each other by p + regions 30 , as shown in fig1 . the common silicon island includes a substrate region 36 that is also p +. at least one source contact 60 is provided . word contacts 62 , and 64 , are connected to their respective top electrodes 44 . the substrate region 36 has a substrate contact 48 , while each drain has a bit contact 46 . the present mfis ferroelectric memory array structure is capable of being block erased to a high threshold voltage . in an embodiment of the present method , the programming voltage v p will be between approximately 3 v and 5 volts . to accomplish a block erase , a negative programming voltage is applied to a word line , for example by applying the negative programming voltage to word contact 62 , while holding all the bits in contact with the word line , the source and the substrate at the ground potential . the negative programming voltage − v p is in the range of between approximately − 3v and − 5v . the erased block may be one word up to the entire memory array . since the word line potential is negative with respect to the source , drain and substrate of each transistor channel , the channel is at the accumulation condition . holes are accumulated at the surface of the channel of each transistor along the word line . since the channel of each bit is connected together through the adjacent p + isolation layer in the given work line , the channels of the transistors are kept at the same potential as that of the substrate region 36 , which is at the ground potential in this example . the potential difference between the gate and the channel of the ferroelectric transistors connected to a given word line is at the same potential − v p . the ferroelectric capacitors of these transistors pull positive charge to the top of each ferroelectric gate 42 . all the transistors within the selected word are now programmed to a high threshold voltage . individual transistors can be selected and programmed to a low threshold voltage . the substrate lines are grounded . all unselected bit lines , unselected word lines and all the sources are biased at x times of the programming voltage , + v p . where x is from 0 . 2 to 0 . 7 . to selectively program a given bit , for example b 12 , which corresponds to the transistor at the intersection of word line ( w 1 ) and bit line ( b 2 ), to low threshold voltage the word line ( w 1 ) is pulsed to + v p , while the bit line ( b 2 ) voltage is set to ground . the memory transistor corresponding the b 12 is turned on . the voltage across the gate to channel of all un - selected memory transistor is no higher than ( 1 − x ) v p . therefore , their threshold voltage is not affected by this programming operation . multiple bits in the given word may be programmed to the low threshold voltage at the same time . therefore it is possible to perform programming on a word basis . although the gate voltage of all the other transistors along w 1 is at + v p , the substrate is at ground potential while their source voltages and drain voltages are maintained at × v p . the channel of these unselected transistors is depleted . the voltage difference between the gate and channel of these unselected transistors is much lower than the v p . therefore , the threshold voltage of these unselected transistors is not altered by the selective programming operation . as to the transistors that share the same bit line as the selected bit , their bit lines and word lines voltage is ( 1 − x ) v p , so they are off and their channels are depleted . therefore , the threshold of these unselected transistors is not affected by the selective programming operation . the terms of relative position , such as overlying , underlying , beneath are for ease of description only with reference to the orientation of the provided figures , as the actual orientation during , and subsequent to , processing is purely arbitrary . although embodiments , including certain preferred embodiments , have been discussed above , the coverage is not limited to any specific embodiment . rather , the claims shall determine the scope of the invention .