in the following detailed description of the invention , reference is made to the accompanying drawings that form a part hereof , and in which is shown , by way of illustration , specific embodiments in which the invention may be practiced . in the drawings , like numerals describe substantially similar components throughout the several views . these embodiments are described in sufficient detail to enable those skilled in the art to practice the invention . other embodiments may be utilized and structural , logical , and electrical changes may be made without departing from the scope of the present invention . in addition , as the structures formed by embodiments in accordance with the present invention are described herein , common semiconductor terminology such as n - type , p - type , n + and p + will be employed to describe the type of conductivity doping used for the various structures or regions being described . the specific levels of doping are not believed to be germane to embodiments of the present invention ; thus , it will be understood that while specific dopant species and concentrations are not mentioned , an appropriate dopant species with an appropriate concentration to its purpose , is employed . the following detailed description is , therefore , not to be taken in a limiting sense , and the scope of the present invention is defined only by the appended claims , along with the full scope of equivalents to which such claims are entitled . [ 0025 ] fig1 a shows an embodiment of a circuit 100 that is responsive to an enable signal 102 , supplied from an external source . the enable signal activates the output of the circuit 100 . circuit 100 comprises a first branch 104 and a second branch 106 . in one embodiment , the first branch supplies a supply voltage at an output node 108 , ramping the supply voltage up to a potential at or near the supply voltage for an appropriate circuit to be controlled by the output voltage , and the second branch supplies a pumped voltage above the supply voltage of the first branch . first branch 104 , when active , ramps the potential of output node 108 to at or near a supply voltage . when second branch 106 is active , it ramps the potential of the output node from the voltage at or near the supply voltage to a potential above the current output voltage using a pumped voltage supply . in one embodiment , the circuit switches from the first branch as a supply for the output node to the second branch as a supply for the output node once a predetermined threshold potential at the output node is reached . in another embodiment , the circuit switches from the first branch as a supply for the output node to the second branch as a supply for the output node once a predetermined time has elapsed with the first branch actively supplying a voltage to the output node . in one embodiment , the first branch ramps the output potential quickly to at or near the supply voltage . in one embodiment , a circuit 150 for providing an output voltage slightly above a supply voltage v cc from an elevated voltage , v px or v h , is shown in fig1 b . v px is typically generated using a pump circuit ( not shown ) and is greater than v cc . for purposes of the present invention , v px can be generated using any technique including an external supply . circuit 150 includes a nand gate 152 that has two inputs . when the inputs to the nand gate 152 are in a state to provide a high output from the nand gate , pull down transistor 154 , which is gate connected to the nand output , is turned on and the output voltage ( node 156 ) is pulled to ground . the output node 156 is connected to the gate of p - type transistor 158 , which when nand output is high , is turned on and passes a high voltage through transistor 158 to the gate of pass transistor 160 , which is therefore turned on . the same high voltage at the gate of p - type transistor 162 keeps it off . the output of nand gate 152 is passed through a series of first , second , and third inverters 164 , 166 , and 168 , respectively . inverter 164 output is low when nand gate output is high , keeping a low potential at node 170 connected to pass transistor 160 . the signal is inverted twice , in inverters 166 and 168 , from low to high to low high again at the output from inverter 168 . in a steady state , transistor 171 is off when nand gate 152 output is high , keeping node 172 high due to the pass through of high potential through transistor 158 . inverter 164 is in one embodiment a very strong pmos inverter . the strength of the inverter 164 assists in raising the voltage at node 156 to near v cc in as fast a time as possible . the node 170 has an inherent rise time from its ground voltage to near v cc that depends upon the capacitance value seen at the node 156 , that is the capacitance buildup due to the load at node 156 . node 170 rises with an rc time constant which is the time constant for node 156 to charge to v cc . the inputs to nand gate 152 are provided by a pass transistor control circuit such as circuit 174 shown in fig1 b . pass transistor control circuit determines when the output node voltage is to be supplied to the pass transistors , and is one embodiment dependent upon the control circuitry for a memory . when the pass transistors are to be turned on , the control circuit 174 issues inputs to the nand gate to force the nand gate output low . an enable circuit according to one embodiment comprises a control circuit such as circuit 174 coupled to a nand gate such as gate 152 . when the output of nand gate 152 switches to low , transistor 154 shuts off . inverter 164 generates a high signal at node 170 which is very quickly passed through pass transistor 160 as pass transistor 160 is already on as discussed above . in one embodiment , the inverter 164 is a large inverter . in this embodiment , the size of inverter 164 creates a strong and fast ramp up of the voltage at the output node 156 to near v cc . as the voltage ramps up to v cc at output node 156 , the increasing voltage begins to and eventually fully shuts off transistor 158 . the output from inverter 164 also passes through time delay inverters 166 and 168 , which in one embodiment are chosen in size to be trip point detectors . the first inverter 166 in one embodiment has a skewed trip point . inverter 166 does not trip until its input nears v cc , for example , and then it trips the inverter 168 for an additional delay before switching off the pass transistor 160 by operation of the pull down transistor 171 . the delays can therefore be chosen to allow the output node voltage to rise to near v cc without using current from the pumped voltage v px . the delay on inverters 166 and 168 is controlled by the rise time of node 170 . for example , a typical rise time for nodes 156 and 170 to charge to v cc is about two ( 2 ) nanoseconds . in one embodiment , the delays for the inverters are about 200 picoseconds each . the trip point of inverter 166 is set high in one embodiment , and the inverter will not trip until about one ( 1 ) nanosecond has elapsed . the inverters 166 and 168 are in other words a detector . the line voltage at node 170 has to reach a certain threshold before the inverter 166 trips . the trip points of inverters 166 and 168 are chosen in one embodiment to allow the output node to charge to a predetermined potential level at or near v cc before switching off pass transistor 160 and completing a ramp to a potential above v cc using smaller transistor 162 which draws current from the pumped voltage supply ( v px ) as opposed to the supply voltage ( v cc ). once the output signal from inverter 164 passes through the inverters 166 and 168 , a high signal is presented at the gate of transistor 171 , which turns transistor 171 on , pulling node 172 to ground and shutting off pass transistor 160 . the low potential at node 172 turns on transistor 162 , and transistor 162 passes pumped voltage v px to output node 156 . however , since the output node 156 is already at or near v cc , due to the ramp up from inverter 164 during the time delay for shutting off pass transistor 160 , the pumped voltage only has to provide enough current to pull up node 156 from v cc to a point slightly above v cc , for example a threshold voltage , v t , above v cc , instead of a full potential of on the order of 5 volts . the circuit ramps the output node 156 voltage quickly to at or near v cc without relying on the pumped voltage , drawing most of its required current from v cc . the large inverter assists in ramping the output node voltage quickly to at or near v cc . when the output voltage reaches or nears v cc , depending upon the selectable timing from inverters 166 and 168 , the remaining voltage necessary above v cc is supplied by drawing on v px , but the initial ramp in the output node voltage is supplied by v cc . a driver for the gates of pass transistors comprises in one embodiment a circuit driven by v px . when the circuit is disabled , that is the memory is not in a read cycle , the output of the driver is a ground voltage so that the gates of the pass transistors it drives are off . the circuit is ready during its disable phase to quickly pass a supply voltage v cc to the output when the circuit is enabled , and to use a pumped voltage to raise the output voltage above v cc once it gets close to v cc , but without requiring a large current draw from the pumped voltage which supplies the driver . the driver of the present embodiments obtains most of its current from the supply voltage , and only relies on the pumped voltage for the extra current to push the output above the supply voltage . it is sufficient to drive the output voltage slightly above v cc , such as to about a threshold voltage v t above v cc . current usage from the pumped voltage drops to about { fraction ( 1 / 7 )} to ⅛ of previous solutions . flash memories using a voltage sensing in order to perform read and write operations are amenable to use with the driver described above . in one embodiment , a driver such as that described above provides the gate voltage for the pass transistors 202 of memory device 200 as is shown in fig2 . the pass transistors connect global bitlines 204 to sense amplifiers 206 of memory device 200 . memory array 208 is read through the use of the sense amps as is well known in the art . a driver circuit , such as driver circuit 150 described above , provides the gate voltage for the pass transistors . the driver provides a supply voltage nearly immediately upon enabling of the driver circuit . the driver circuit then provides a voltage slightly above the supply voltage , delayed to allow the voltage to rise to at or near v cc , after the gate voltage ramps up to at or near v cc without requiring a drain on the current of the pumped voltage that supplies the driver circuit . [ 0038 ] fig3 is a functional block diagram of a memory device 300 , of one embodiment of the present invention , which is coupled to a processor 310 . the memory device 300 and the processor 310 may form part of an electronic system 320 . the memory device 300 has been simplified to focus on features of the memory that are helpful in understanding the present invention . the memory device includes an array of memory cells 330 . the memory array 330 is arranged in banks of rows and columns . an address buffer circuit 340 is provided to latch address signals provided on address input connections a 0 - ax 342 . address signals are received and decoded by row decoder 344 and a column decoder 346 to access the memory array 330 . it will be appreciated by those skilled in the art , with the benefit of the present description , that the number of address input connections depends upon the density and architecture of the memory array . that is , the number of addresses increases with both increased memory cell counts and increased bank and block counts . the memory device reads data in the array 330 by sensing voltage or current changes in the memory array columns using sense / latch circuitry 350 . the sense / latch circuitry , in one embodiment , is coupled to read and latch a row of data from the memory array . sense / latch circuitry 350 in one embodiment includes a driver circuit for the pass transistors of the sense / latch circuitry , such as that described above . data input and output buffer circuitry 360 is included for bi - directional data communication over a plurality of data ( dq ) connections 362 with the processor 310 . command control circuit 370 decodes signals provided on control connections 372 from the processor 310 . these signals are used to control the operations on the memory array 330 , including data read , data write , and erase operations . the flash memory device has been simplified to facilitate a basic understanding of the features of the memory . a more detailed understanding of internal circuitry and functions of flash memories are known to those skilled in the art . finally , it will be understood that the number , relative size and spacing of the structures depicted in the accompanying figures are exemplary only , and thus were selected for ease of explanation and understanding . therefore such representations are not indicative of the actual number or relative size and spacing of an operative embodiment in accordance with the present invention . a driver for a flash memory has been described that includes a combined voltage obtained mostly from a supply voltage , and only partially from a pumped voltage , so as to not tax the pumped voltage by drawing too much current therefrom . although specific embodiments have been illustrated and described herein , it will be appreciated by those of ordinary skill in the art that any arrangement , which is calculated to achieve the same purpose , may be substituted for the specific embodiment shown . this application is intended to cover any adaptations or variations of the present invention . therefore , it is manifestly intended that this invention be limited only by the claims and the equivalents thereof .