fig1 is a block diagram of an embodiment of a direct thermal electric converter 100 . embodiments of the direct thermal electric converter 100 are configured to receive heat from a heat source 102 , and are configured to generate electrical power from the received heat . the electrical power ( current and voltage ) is deliverable to a load 104 . in some embodiments , the generated electrical power is output in a direct current ( dc ) form . in other embodiments which include power condition equipment , the generated electrical power may be output in an alternating current ( ac ) form . the various semiconductor embodiments are configured to capture the “ built - in ” potential ( v d ) of diodes by pitting the depletion regions of different materials against each other . the overall formula for carrier densities in semiconductors is demonstrated in equation 1 . in equation 1 , n and p are electron and hole concentrations respectively , c is a material - specific constant , t is temperature ( in kelvins ), eg is the bandgap , and kb is boltzmann &# 39 ; s constant . at ambient , kb * t is approximately 0 . 025 ev . fig2 is a block diagram of an exemplary semiconductor embodiment 200 of the direct thermal electric converter 100 . the exemplary semiconductor embodiment 200 comprises alternating layers of a low recombination material 202 ( interchangeably referred to as a low recombination semiconductor material ) and a high recombination material 204 ( interchangeably referred to as a high recombination semiconductor material ). the low recombination material 202 and the high recombination material 204 join at a heterojunction . the high recombination material 204 may be doped with a positive doping material to form a positive doped layer 206 a at one end and adjacent to the heterojunction . the high recombination material 204 may doped with a negative doping material to form a negative doped layer 208 a at the other end and adjacent to the other heterojunction . accordingly , a layer of high recombination material 204 remains that is not doped ( and is thus on opposing sides of the positive doped layer 206 a and the negative doped layer 208 a ). the low recombination material 202 may also be doped with a positive doping material to form a positive doped layer 206 b at one end and adjacent to the heterojunction . the low recombination material 202 may also be doped with a negative doping material to form a negative doped layer 208 b at the other end and adjacent to the another heterojunction . accordingly , a layer of low recombination material 202 remains that is not doped . as illustrated in fig2 , the high recombination material 204 and the low recombination material 202 are separated by either a positive doped layer 206 a / b or a negative doped layer 208 a / b . electrons may migrate across the heterojunction through the negative doped layer 208 a / b . holes may migrate across the heterojunction through the positive doped layer 206 a / b . electron and / or hole drift , diffusion , and thermionic emission ( indicating crossing the heterojunction ) may be interchangeably used for the term “ migrate ” herein . a positive terminal 210 and a negative terminal 212 provide attachment points ( a schottky contact or the like ) for delivery of the generated dc electric power . in alternative embodiments , an optional positive doped layer 214 and / or an optional negative doped layer 216 may be included at the ends of the low recombination material 202 and / or the high recombination material 204 , respectively , to provide an ohmic type contact with the terminals 210 , 212 . any suitable low recombination material 202 and high recombination material 204 may be used . any suitable doping material type , doping layer depth , and / or impurity concentration may be used in the various embodiments . in some embodiments , different doping materials may be used . the low recombination material 202 , the high recombination material 204 , the positive doped layer 206 a / b , and the negative doped layer 208 a / b are semiconductor type materials wherein the bandgap between the conduction band and the valence band is relatively small ( as compared to an insulator type material ). in the high recombination material 204 , electrons and holes may more easily recombine , or may be annihilated , as compared to the low recombination material 202 . since the rate at which electrons and holes recombine is inversely proportional to the electron and hole concentrations in the conduction and valence bands , respectively , the low recombination material 202 has relatively more free electrons and holes at any given temperature as compared to the high recombination material 204 . accordingly , there are a relatively greater number of free electrons and holes that are available to migrate from the low recombination material 202 ( as compared to the high recombination material 204 ). various embodiments may be created using selected materials with relatively high and low recombination rates of interest to achieve desired current and / or voltage in a semiconductor embodiment 200 . when heat energy is applied or transmitted into the semiconductor materials 202 , 204 , 206 a / b , and / or 208 a / b , mobile charge carriers ( electrons ) are able to migrate from their valence band up to their respective conduction band . once the electron migrates to its conduction band , the electron may readily move to conduction bands of adjacent atoms or molecules . the associated hole created by the electron is also a mobile charge carrier that may readily migrate to adjacent atoms or molecules . the mobile charge carriers ( electron ) of the low recombination material 202 tend to remain in the conduction bands due to the inherent nature of the low recombination material 202 which tends to resist recombination of the electron and hole pairs . thus , it is relatively easy for the mobile charge carriers of the low recombination material 202 to migrate to other conduction bands of adjacent atoms or molecules . in contrast , the electrons and / or holes that have migrated into the high recombination material 204 tend to recombine . electron mobile charge carriers drop out of the conduction bands into available holes of the valence bands due to the inherent nature of the high recombination material 204 which tends to facilitate recombination of the electrons and / or holes . that is , it is relatively easy for the electrons in the conduction band to recombine with the holes of the valence bands . the migration of mobile charge carriers ( electrons and / or holes ) may be directed , guided , limited and / or constrained in a manner that induces ( generates ) an aggregate electric current flow and an attendant voltage in the semiconductor embodiment 200 of the direct thermal electric converter 100 . the current and voltage available at the terminals 210 , 212 may then be provided to a load 104 ( fig1 ). fig3 shows a portion 214 of the semiconductor embodiment 200 that conceptually illustrates migration of mobile charge carriers ( electrons and holes ) from the low recombination material 202 into the positive doped layer 206 a / b , and then the attendant migration of holes from the positive doped layer 206 a / b into the high recombination material 204 . fig4 shows a portion 216 of the semiconductor embodiment 200 conceptually illustrates migration of mobile charge carriers ( electrons and holes ) from the low recombination material 202 into the negative doped layer 208 a / b , and then the attendant migration of electrons from the negative doped layer 208 a / b into the high recombination material 204 . holes are conceptually illustrated as a “ o ” and electrons are conceptually illustrated as an “ e ” in fig3 and 4 . the holes are opposite in polarity from the electrons . the positive doped layer 206 a / b is a semiconductor layer fabricated with impurities that result in a relatively large number of holes in the positive doped layer 206 a / b . as conceptually illustrated in fig3 , when the mobile charge carriers ( electrons and / or holes ) from an adjacent low recombination material 202 migrate into the positive doped layer 206 a / b , the migrating electrons tend to be repelled or recombine with the holes of the positive doped layer 206 a / b , respectively . however , the migrating holes from the low recombination material 202 tend to migrate through the positive doped layer 206 a / b into the high recombination material 204 . this net movement of holes from the low recombination material 202 , through the positive doped layer 206 a / b , and then the into the high recombination material 204 results in a generated current and voltage . the negative doped layer 208 a / b is fabricated with impurities that result in a relatively large number of electrons in the negative doped layer 208 a / b . as conceptually illustrated in fig4 , when the mobile charge carriers ( electrons and / or holes ) from an adjacent low recombination material 202 migrate into the negative doped layer 208 a / b , the migrating holes tend to be repelled or recombine with the electrons of the negative doped layer 208 a / b , respectively . however , the migrating electrons from the low recombination material 202 tend to migrate through the negative doped layer 208 a / b into the high recombination material 204 . this net movement of electrons from the low recombination material 202 , through the negative doped layer 208 a / b , and then the into the high recombination material 204 results in a generated current and voltage . the holes migrating through the positive doped layer 206 a / b into the high recombination material 204 tend to combine with the electrons migrating through the negative doped layer 208 a / b into the high recombination material 204 . as the electrons and holes recombine in the high recombination material 204 , additional mobile charge carriers ( electrons and / or holes ) tend to further migrate into the high recombination material 204 . the continual migration of the mobile charge carriers tends into the high recombination material 204 results in a sustainable generated current and voltage so long as sufficient heat energy is available in the low recombination material 202 to generate mobile charge carriers , and a load is present to absorb the current . if no load is present , a maximum open circuit voltage will be reached , reducing the net migration to zero . fig5 is a block diagram of an alternative semiconductor embodiment 500 of the direct thermal electric converter 100 . the semiconductor embodiment 500 comprises alternating layers of a high recombination material 204 and a low recombination material 202 which are separated by either a positive doped layer 206 a / b or a negative doped layer 208 a / b . a positive terminal 210 and a negative terminal 212 provide attachment points for delivery of the generated dc electrical power . in alternative embodiments , a positive doped layer and / or a negative doped layer ( not shown ) may be optionally included at the ends of the semiconductor embodiment 500 depending upon the material recombination type of the ending portions of the semiconductor materials . fig6 is a block diagram of an alternative semiconductor embodiment 600 of the direct thermal electric converter 100 . the semiconductor embodiment 600 comprises a plurality of alternating layers of a high recombination material 204 and plurality of a low recombination material 202 which are separated by either a positive doped layer 206 a / b or a negative doped layer 208 a / b . a positive terminal 210 and a negative terminal 212 provide attachment points for delivery of the generated dc electrical power . in alternative embodiments , a positive doped layer 214 and / or a negative doped layer 216 may be optionally included at the ends of the semiconductor embodiment 200 depending upon the material recombination type of the ending portions of the semiconductor materials . the plurality of layers of alternating high recombination material 204 and low recombination material 202 permit generation of a higher voltage and / or current at the terminals 210 , 212 . accordingly , the design and fabrication of the semiconductor embodiment 500 may be engineered to provide any suitable voltage and / or current of interest . either material may be used at a terminal , without regard to the material used at the opposite terminal . in some applications , groups of the semiconductor embodiments 200 , 500 , 600 may be arranged in parallel and / or series connection configurations to further provide a voltage and / or current of interest . thus , some semiconductor embodiments 200 , 500 , 600 may be configured to source low voltage and / or low current loads 400 . other semiconductor embodiments 200 , 500 , 600 may be configured to source high voltage and / or high current loads 104 . some embodiments may be configured to supplement , or even replace , power generation stations used in a public utility power grid or a private power system . where waste heat is available , semiconductor embodiments 200 , 500 , 600 may be used for energy conservation , green power , and / or co - generation . in a working semiconductor embodiment 600 , a three inch wafer was fabricated using molecular beam epitaxy with 21 total layers ( 10 . 5 pairs ), each 0 . 25 um thick , alternating 0 . 50 al gaas ( 50 % al ) and 0 . 33 al gaas ( 30 % al ) on an n - doped gaas wafer . the top and bottom 10 % ( 25 nm ) of each layer were doped at 1 . 0e + 18 , with alternating doping at each heterojunction . terminals 210 , 212 were deposited on top and bottom of the finished wafer and annealed . table 1 illustrates measured test performance results for the working semiconductor embodiment 600 . generally , the division between indirect and direct semiconductor materials is at about 41 - 43 %. higher than that is indirect , lower is direct . the exact percentage al number may vary based on temperature and fabrication . the exemplary embodiment was fabricated at substantially 50 % al and substantially 30 % al . in an alternative embodiment fabricated using algaas , a percentage greater than 50 % al and lower than 33 % al may be employed . the semiconductor embodiments 200 , 500 , 600 may be readily fabricated using any suitable semiconductor fabrication process . further , any suitable semiconductor material may be used in fabrication of a direct thermal electric converter 100 . other non - limiting examples of semiconductor materials include , but are not limited to , ge , hg 1 - x cd x te , sige superlattice , in x ga 1 - x , sb , gasb , pbs , pbse , or pbte . indirect narrow - gap superlattice materials , including in x ga 1 - x sb / bi y sb i - y may be used . even when two semiconductors are both direct ( or indirect ), they may still have different recombination rates . of particular interest are narrow gap direct semiconductors with different effective densities of states , indicating different recombination rates . the differing density of state values may be selectively used in the fabrication of the semiconductor layers to control output current and / or voltage . in particular , lead sulfide ( pbs ) and lead telluride ( pbte ) have a significant differences ( for example , a factor of 1 . 6 ) at ambient temperature . in general , any pair of materials with a narrow bandgap and unequal recombination rates which can be grown together in the structure may be used in a semiconductor embodiment 200 , 500 , 600 . additionally , or alternatively , the thickness of the semiconductor layers and / or doping layers may be varied to control output current and / or voltage . in some embodiments , additional layers may be inserted between the materials , such as metal layers within the doped regions , without adversely affecting performance . in an exemplary embodiment , the heterojunction is centered between , or is substantially centered between , the doping layers 208 a / b . in other embodiments , the heterojunction may not be centered . in some embodiments , the heterojunction may be located outside the doped layer 208 a / b . in such embodiments , the ratio of carriers may remain dominated by the effects of doping . also , in such embodiments , one of the doped layers 208 a / b would be inherently omitted . fig6 is a block diagram of an alternative semiconductor embodiment 600 of the direct thermal electric converter 100 . the semiconductor embodiment 600 comprises a plurality of alternating layers of a high recombination material 204 and a low recombination material 202 which are separated by either a positive doped layer 206 a / b or a negative doped layer 208 a / b . a positive terminal 210 and a negative terminal 212 provide attachment points for delivery of the generated dc electrical power . in alternative embodiments , a positive doped layer 214 and / or a negative doped layer 216 may be optionally included at the ends of the semiconductor embodiment 200 depending upon the material recombination type of the ending portions of the semiconductor materials . fig7 is a block diagram of an electrochemical embodiment 700 of the direct thermal electric converter 100 . the electrochemical embodiment 700 comprises an enclosure 702 enclosing a plurality of alternating layers of a high recombination material 704 and a low recombination material . the low recombination material is cooperatively formed by an anion membrane 706 and a cation membrane 708 in contact with each other . a positive terminal 210 and a negative terminal 212 provide attachment points for delivery of the generated dc electrical power . in an exemplary embodiment , the high recombination material 704 is water . preferably , the water of the high recombination material 704 is pure , or substantially pure . in some embodiments , chemical additives may be added to adjust the recombination . alternatively , or additionally , another type of high recombination fluid or material may be used for the high recombination material 704 . when heat energy is added to the electrochemical embodiment 700 , positive charge carriers and negative charge carriers are generated in the low recombination material cooperatively formed by the anion membrane 706 and the cation membrane 708 . the negative charge carriers migrating into the water from the cation membrane 708 recombine with the positively charged carriers migrating into the water from the anion membrane 706 located on the opposing side of the water . in an exemplary electrochemical embodiment 700 , the positive charge carriers are hydrogen ions ( h +). the hydrogen ions migrate towards their respective high recombination material 704 , the water . the negative charge carriers in the electrochemical embodiment 700 are hydroxyl ions ( oh —). the hydroxyl ions also migrate towards their respective high recombination material 704 , the water . movement of these positively charged hydrogen ions , and the opposite movement of the hydroxyl ions , results in a net migration of charge across the electrochemical embodiment 700 , thereby resulting in a current and a voltage . the hydrogen ions are opposite in polarity from the hydroxyl ions . any suitable anion exchange membrane material may be used for the anion membrane 706 . any suitable cation exchange membrane material may be used for the cation membrane 708 . an exemplary working embodiment employed an ami - 7001s anion exchange membrane sandwiched with a cmi - 7002 cation exchange membrane . nine membrane pairs were arranged in a tray 702 and distilled water was used as the high recombination material 704 in the exemplary embodiment , hydrogen was exhausted from the enclosure 702 in proximity to the positive terminal 210 . in some embodiments , the enclosure 702 may be configured to capture the exhausting hydrogen for use in other chemical or electrochemical processes . in the exemplary embodiment , oxygen was exhausted from the enclosure 702 in proximity to the negative terminal 212 . in some embodiments , the enclosure 702 may be configured to capture the exhausting oxygen for use in other chemical or electrochemical processes . in an electrochemical embodiment 700 utilizing water as the high recombination material 704 , the exhausting hydrogen and oxygen deplete the water . accordingly , water may have to be added from time to time to extend the useful life of the electrochemical embodiment 700 . it should be emphasized that the above - described embodiments of the direct thermal electric converter 100 are merely possible examples of implementations of the invention . many variations and modifications may be made to the above - described embodiments . all such modifications and variations are intended to be included herein within the scope of this disclosure and protected by the following claims .