referring to fig3 and fig4 conjunctively which show a plan and sectional view of a first embodiment of composite lead frame according to the present invention used for flip chip packaging of a led , the composite lead frame structure 1 comprises a die bonding layer 10 and a solder layer 11 . the overall composite lead frame structure 1 consists of a plurality of lead frame cells 12 with lead frame cell gap 13 in between one another . each lead frame cell gap 13 is provided with a first lead frame cell gap 130 , a second lead frame cell gap 131 and a third lead frame cell gap 132 . the third lead frame cell gap 132 is filled with insulating material . lead frame cell 12 has die bonding unit 120 and a solder unit 121 . the die bonding unit 120 comprises insulating clearance 1201 and a plurality of first conductive leads 1200 and a plurality of conductive body holes 1202 . each of the first conductive leads 1200 sequentially contains upper metal layer 1203 , upper adhesive layer 1204 , tape layer 1205 and lower adhesive layer 1206 . the insulating clearance 1201 of die bonding unit 120 comprises conductive lead clearance 12010 and tape clearance 12011 . the insulating clearance 1201 is formed between various conductive lead tips . the solder unit 121 comprises insulating clearance 1211 and a plurality of second conductive leads 1210 . the insulating clearance 1211 of the solder unit 121 filled with insulating material . the insulating clearance 1211 is formed between various conductive lead tips . the first conductive lead 1200 and the second conductive lead 1210 are vertically aligned so that the lower adhesive layer 1206 of the die bonding unit 120 is tightly attached with solder unit 121 . the upper adhesive layer 1204 and lower adhesive layer 1206 are insulating paste . the upper metal layer 1203 of the die bonding layer 10 are made of copper foil . the plurality second conductive leads 1210 of solder layer 11 are made of copper , iron or aluminum . upon the plurality of first conductive lead 1200 , there is formed a plating layer 14 which is a material of one selected from silver , gold , nickel , palladium and tin or combination thereof . the width of the insulating clearance 1201 of the die bonding unit 120 can be greater , smaller or equal to the width of the insulating clearance 1211 of the solder unit 121 . the plurality of conductive body holes 1202 are filled with either of gold , silver , copper and aluminum . as particularly shown in fig4 , the tape layer 1205 is made of polyimide , pi . the second lead frame cell gap 131 and conductive lead clearance 12010 are also made of polyimide , pi . referring to fig5 which shows a plan and sectional view of a second embodiment of a composite lead frame according to the present invention used for flip chip packaging of a led , with reference to fig4 of the first embodiment , the die bonding layer is a double layered metal layer . it can be seen the composite lead frame structure 2 consists of die bonding layer 20 , cohesive layer 21 and solder layer 22 . the overall composite lead frame structure 2 consists of a plurality of lead frame cells 23 with lead frame cell gap 24 in between one another . each lead frame cell gap 24 is provided with a first lead frame cell gap 240 , a second lead frame cell gap 241 and a third lead frame cell gap 242 . the third lead frame cell gap 242 is filled with insulating material . lead frame cell 23 has die bonding unit 230 , a cohesive unit 231 and a solder unit 232 . the die bonding unit 230 comprises a plurality of first conductive leads 2300 and insulating clearance 2301 and the first conductive leads 2300 comprises a plurality of conductive body holes 2302 . each of the first conductive leads 2300 sequentially contains upper metal layer 2303 , upper adhesive layer 2304 , tape layer 2305 , lower adhesive layer 2306 and lower metal layer 2307 . the insulating clearance 2301 of the die bonding unit 230 comprises conductive lead clearance 23010 and tape clearance 23011 . the insulating clearance 2301 is formed between various conductive lead tips . the solder unit 232 comprises insulating clearance 2321 and a plurality of second conductive leads 2320 . the insulating clearance 2321 of the solder unit 232 filled with insulating material . the insulating clearance 2321 is formed between various conductive lead tips . the first conductive leads 2300 and the second conductive leads 2320 are vertically aligned so that the die bonding unit 230 is tightly attached with the solder unit 232 . the cohesive unit 231 can be a conductive paste which further comprises an upper cohesive unit 2310 under the first conductive leads 2300 and a lower cohesive unit 2311 above the second conductive leads 2320 . the cohesive unit 231 consists of the upper cohesive unit 2310 and lower cohesive unit 2311 made of eutectic material . therefore , the attachment of die bonding unit 230 and solder unit 232 is through the upper cohesive unit 2310 and lower cohesive unit 2311 of the cohesive unit 231 formed with eutectic materials of gold , silver or tin and being joined together by eutectic process . the upper adhesive layer 2304 and lower adhesive layer 2306 are insulating paste . the upper metal layer 2303 and upper adhesive layer 2304 of the die bonding layer 20 are made of copper foil . a plurality of second conductive leads 2320 of solder layer 22 are made of copper , iron or aluminum . upon a plurality of first conductive leads 2300 , and also below the plurality of second conductive leads 2300 , there is formed a plating layer 25 which is a material of one selected from silver , gold , nickel , palladium and tin or combination thereof . the width of the insulating clearance 2301 of the die bonding unit 230 can be greater , smaller or equal to the width of the insulating clearance 2321 of the solder unit 232 . there are plurality of conductive body holes 2302 filled with either of gold , silver , copper and aluminum . as the same particularly shown in fig5 , the tape layer 2305 is made of polyimide , pi . the second lead frame cell gap 241 and insulating clearance 23011 are also made of polyimide , pi . referring to fig6 and 7 conjunctively which shows a composite lead frame structure used for ic packaging , the composite lead frame structure 1 comprises a die bonding layer 30 and a solder layer 31 . the overall composite lead frame structure 1 consists of a plurality of lead frame cells 32 with lead frame cell gap 33 in between one another . each lead frame cell gap 33 is provided with a first lead frame cell gap 330 , a second lead frame cell gap 331 and a third lead frame cell gap 332 . the third lead frame cell gap 332 is filled with insulating material . lead frame cell 32 has die bonding unit 320 and a solder unit 321 . the die bonding unit 320 comprises insulating clearance 3201 and a plurality of first conductive leads 3200 and the first conductive leads 3200 comprises a plurality of conductive body holes 3202 . each of the first conductive leads 3200 sequentially contains upper metal layer 3203 , upper adhesive layer 3204 , tape layer 3205 and lower adhesive layer 3206 . the insulating clearance 3201 of the die bonding unit 320 comprises conductive lead clearance 32010 and tape clearance 32011 . the insulating clearance 3201 is formed between various conductive lead tips the solder unit 321 comprises insulating clearance 3211 and a plurality of second conductive leads 3210 . the insulating clearance 3211 of the solder unit 321 filled with insulating material . the insulating clearance 3211 of the solder unit 321 is formed between various conductive leads . the first conductive lead 3200 and the second conductive lead 3210 are vertically aligned so that the lower adhesive layer 3206 of the die bonding unit 320 is tightly attached with solder unit 321 . the upper adhesive layer 3204 and lower adhesive layer 3206 are insulating paste . the upper metal layer 3203 is made of copper foil . the plurality conductive leads 3210 of the solder layer 31 are made of copper , iron or aluminum . upon the plurality of first conductive leads 3200 , and also below the plurality of second conductive leads 3210 , there is formed a plating layer 34 which is a material of one selected from silver , gold , nickel , palladium , and tin or combination thereof . the width of the insulating clearance 3201 of the die bonding unit 320 can be greater , smaller or equal to the width of the insulating clearance 3211 of the solder unit 321 . the plurality of conductive body holes 3202 are filled with either of gold , silver , copper and aluminum . it is to be noted and according to the structure of this embodiment the number of plurality first conductive leads 3200 and second conductive leads 3210 is greater than two . there will be a conductive lead space 3207 and a tape space 3208 formed between the first conductive leads 3200 . there is another insulating space 3212 between the second conductive leads 3210 . this insulating space 3212 is filled with insulating material . as particularly shown in fig7 , the tape layer 3205 is made of polyimide , pi . the second lead frame cell gap 331 and insulating clearance 32011 are also made of polyimide , pi referring to fig8 which shows a plan and sectional view of a fourth embodiment of a composite lead frame according to the present invention used for ic packaging process , and also referring to fig7 conjunctively , it can be seen the composite lead frame structure 4 consists of die bonding layer 40 , cohesive layer 41 and solder layer 42 . the overall composite lead frame structure 4 consists of a plurality of lead frame cells 43 with lead frame cell gap 44 in between one another . each lead frame cell gap 44 is provided with a first lead frame cell gap 440 , a second lead frame cell gap 441 and a third lead frame cell gap 442 . the third lead frame cell gap 442 is filled with insulating material . lead frame cell 43 has die bonding unit 430 , a cohesive unit 431 and a solder unit 432 . the die bonding unit 430 comprises first insulating clearance 4301 and a plurality of first conductive leads 4300 and the first conductive leads 4300 comprises a plurality of conductive body hole 4302 . each of the first conductive leads 4300 of the die bonding unit 430 sequentially contains upper metal layer 4303 , upper adhesive layer 4304 , tape layer 4305 , lower adhesive layer 4306 and lower metal layer 4307 . the first insulating clearance 4301 of the die bonding unit 430 comprises conductive lead clearance 43010 and tape clearance 43011 . the first insulating clearance 4301 is formed between various conductive lead tips . the solder unit 432 comprises second insulating clearance 4321 and a plurality of second conductive leads 4320 . the second insulating clearance 4321 of the solder unit 432 filled with insulating material . the second insulating clearance 4321 is formed between various conductive lead tips . the first conductive lead 4300 of die bonding unit 430 and the second conductive lead 4320 of solder unit 432 are vertically aligned so that the die bonding unit 430 is tightly attached with solder unit 432 . the cohesive unit 431 is formed between the die bonding unit 430 and solder unit 432 . the cohesive unit 431 can be a conductive paste which further comprises an upper cohesive unit 4310 under the first conductive lead 4300 of the die bonding unit 430 and a lower cohesive unit 4311 above the second conductive lead 4320 of the solder unit 232 . the cohesive unit 431 consists of the upper cohesive unit 4310 and lower cohesive unit 4311 made of eutectic material . therefore , the attachment of die bonding unit 430 and solder unit 432 is through the upper cohesive unit 4310 and lower cohesive unit 4311 of the cohesive unit 431 formed with eutectic materials of gold , silver or tin and being joined together by eutectic process . the upper adhesive layer 4304 and lower adhesive layer 4306 are insulating adhesive . the upper metal layer 4303 and lower metal layer 4307 of the die bonding layer 40 are made of copper foil . a plurality second conductive leads 4320 of the solder layer 42 are made of copper , iron or aluminum . upon the plurality of first conductive leads 4300 of the die bonding unit 430 , and also below the plurality of second conductive leads 4320 of the solder unit 432 , there is formed a plating layer 45 which is a material of one selected from either of silver , gold , nickel , palladium and tin or combination thereof . the width of the first insulating clearance 4301 of the die bonding unit 430 can be greater , smaller or equal to the width of the second insulating clearance 4321 of the solder unit 432 . there are plurality of conductive body holes 2302 filled with either of gold , silver , copper and aluminum . it is to be noted and according to the structure of this embodiment that while the number of plurality first conductive leads 4300 and 4320 of die bonding unit 430 and solder unit 432 is greater than two , there will be an conductive lead space 4308 and a tape space 4309 between the first conductive leads 4300 . there is another insulating space 4322 between the second conductive leads 4320 of the solder unit 432 . this insulating space 4322 is filled with insulating material . the tape layer 4305 is made of polyimide , pi . the tape space 4309 , the second lead frame cell gap 441 and tape clearance 43011 are applied with polyimide pi . this is equivalent to the tape space 3208 , second lead frame cell gap 331 and tape clearance 32011 are applied with polyimide pi as shown particularly shown in fig6 . referring to fig9 to 11 which show illustrative and sectional views of a fifth embodiment of a composite lead frame according to the present invention , the composite lead frame structure 5 comprises a die bonding layer 50 and a solder layer 51 . this embodiment specifically includes a die pad in the die bonding unit and solder unit . there exists only one metal layer . the overall composite lead frame structure 5 consists of a plurality of lead frame cells 52 with lead frame cell gap 53 in between one another . each lead frame cell gap 53 is provided with a first lead frame cell gap 530 , a second lead frame cell gap 531 and a third lead frame cell gap 532 . the third lead frame cell gap 532 is filled with insulating material . lead frame cell 52 has die bonding unit 520 and a solder unit 521 . the die bonding unit 520 comprises a plurality of first conductive leads 5200 , first insulating clearance 5201 , a first die pad 5202 and also a plurality of conductive body holes 5203 . the first die pad 5202 of the die bonding unit 520 has a plurality of heat conductive holes 52020 . each of the first conductive leads 5200 and first die pad 5202 of the die bonding unit 520 sequentially contains upper metal layer 5204 , upper adhesive layer 5205 , tape layer 5206 and lower adhesive layer 5207 . the first insulating clearance 5201 of the die bonding unit 520 comprises conductive lead clearance 52010 and tape clearance 52011 . the first insulating clearance 5201 of the die bonding unit 520 is formed between first die pad 5202 and various first conductive lead 5200 . the solder unit 521 has second insulating clearance 5211 filled with insulating material . the second insulating clearance 5211 is formed between second die pad 5212 and various conductive lead tips . the first conductive lead 5200 of die bonding unit 520 , the second conductive lead 5210 of solder unit 521 , the first die pad 5202 of die bonding unit 520 and first die pad 5202 of solder unit 521 are vertically aligned so that the lower adhesive layer 5207 of the die bonding unit 520 is tightly attached with solder unit 521 . the upper adhesive layer 5204 and lower adhesive layer 5206 are insulation paste . the upper metal layer 5204 and also the first die pad 5202 are made of copper foil . the plurality second conductive leads 5210 of the solder layer 51 and second die pad 5212 are made of copper , iron or aluminum . above the plurality of first conductive lead 5200 of the die bonding unit 520 and the first die pad 5202 , there is formed a electro plating layer 54 . also below the plurality of first conductive leads 5200 and first die pad 5202 , there is formed an electro plating layer 54 which is a material of one selected from either of silver , gold , nickel , palladium and tin or combination thereof . the width of the first insulating clearance 5201 of the die bonding unit 520 can be less than , greater or equal to the width of the second insulating clearance 5211 of the solder unit 521 . a plurality of heat conductive holes 52020 are filled with either of gold , silver , copper and aluminum . it is to be noted and according to the structure of this embodiment , the number of plurality first conductive lead 5200 and 5210 of die bonding unit 520 and solder unit 521 may be greater than two . there will be an conductive lead space 5208 and a tape space 5209 between the first conductive leads 5200 . there is another insulating space 5213 between the second conductive lead 5201 of the solder unit 521 . this insulating space 5213 is filled with insulating material which is best shown in fig1 . as shown in fig1 , the tape layer 5205 is made of polyimide , pi . the second lead frame cell gap 531 , the tape space 5209 and tape clearance 52011 are also made of polyimide pi . referring to fig1 and 13 which show illustrative and sectional views of a sixth embodiment of a composite lead frame according to the present invention , the lead frame structure specifically includes a die pad in the die bonding unit and cohesive unit and there exists two metal layers contrast to the fifth embodiment which only has one metal layer . the overall composite lead frame structure 6 comprises a die bonding layer 60 , an adhesive layer 61 and a solder layer 51 . the overall composite lead frame structure 6 consists of a plurality of lead frame cells 63 with lead frame cell gap 64 in between one another . each lead frame cell gap 64 is provided with a first lead frame cell gap 640 , a second lead frame cell gap 641 and a third lead frame cell gap 642 . the third lead frame cell gap 642 is filled with insulating material . lead frame cell 63 has die bonding unit 630 , a cohesive unit 631 and a solder unit 632 . the die bonding unit 630 comprises a plurality of first conductive leads 6300 , first insulating clearance 6301 and a first die pad 6302 and also a plurality of conductive body holes 6303 . the first die pad 6302 of the die bonding unit 630 has a plurality of heat conductive holes 63020 . each of the first conductive leads 6300 and first die pad 6302 of the die bonding unit 630 sequentially contains upper metal layer 6304 , upper adhesive layer 6305 , tape layer 6306 , lower adhesive layer 6307 and lower metal layer 6308 . the first insulating clearance 6301 of the die bonding unit 630 comprises conductive lead clearance 63010 and tape clearance 63011 . the first insulating clearance 6301 of the die bonding unit 630 is formed between first die pad 6302 and various first conductive leads 6300 . the solder unit 632 has a plurality of second insulating clearance 6321 filled with insulating material , a plurality of second conductive lead 6320 and a second die pad 6322 . the second die pad 6322 is arranged in between second conductive lead 6320 . an second insulating clearance 6321 is formed between second die pad 6322 and various second conductive lead 6320 . the cohesive unit 631 is between die bonding unit 630 and solder unit 632 . the first conductive leads 6300 of die bonding unit 630 , the second conductive lead 6320 of solder unit 632 , the first die pad 6302 of die bonding unit 630 and second die pad 6322 of solder unit 632 are vertically aligned so that the die bonding unit 630 is combined with the solder unit 632 . the upper adhesive layer 6305 and lower adhesive layer 6307 are insulating paste . the upper metal layer 6304 and lower metal layer 6308 of the die bonding layer 60 and also the first die pad 6302 are made of copper foil . the plurality second conductive lead 6320 of the solder layer 62 and second die pad 6322 are made of copper , iron or aluminum . above the plurality of first conductive leads 6300 of the die bonding unit 630 and the first die pad 6302 , there is formed a plating layer 67 . also below the plurality of conductive leads 6320 and second die pad 6322 , there is formed a plating layer 67 which is a material of one selected from either of silver , gold , nickel , palladium and tin or combination thereof . the width of the first insulating clearance 6301 of the die bonding unit 630 can be greater , smaller or equal to the width of the second insulating clearance 6321 of the solder unit 632 . a plurality of conductive body holes 6303 are filled with either of gold , silver , copper and aluminum . a plurality of heat conductive holes 63020 are filled with either of gold , silver , copper and aluminum . it is to be noted and according to the structure of this embodiment that while the number of plurality first conductive leads 6300 and 6320 of die bonding unit 630 and solder unit 632 is greater than two , there will be formed an conductive lead space 65 and a tape space 66 between the first conductive leads 6300 . there is another insulating space 6323 between the second conductive lead 6320 of the solder unit 632 . this insulating space 6323 is filled with insulating material which is best shown in fig1 . as shown in fig1 , the tape layer 6306 is made of polyimide , pi . the second lead frame cell gap 641 , the tape space 66 and tape clearance 63011 are also made of polyimide , pi . referring to fig1 which shows an illustrative and sectional view of a seventh embodiment of a composite lead frame according to the present invention used for ic wire bonding , it can be seen that the die bonding layer 70 is a single face metal layer 74 . there is a die pad 77 provided in the die bonding unit 71 and solder unit 72 . for an ic chip 73 to be wire bonded , metal wires 75 shall be used to connect between electric circuitry . of course , this application of the composite lead frame can also adopt the structure with double faces metal layer . the present invention has been described herein above with preferred embodiments . it is noted still further changes and / or improvements can be made without departing from the spirit of the invention and the scope of defined in the claims .