please refer to fig2 that relates to the process procedures to present invention . ( 1 ) first , preparing two p - si wafers as silicon wafer molds which are mounted on a sample and the same pattern is formed in each by wet - etching technology , as shown in diagram fig2 ( a ) and fig2 ( b ). ( 2 ). as shown in fig2 ( c ), align the mold 31 and 32 with microscope and attach to the top and bottom of device sample with silver glue , perform the step of thin metal film growth . ( 3 ). as shown in fig2 ( d ), after the metal ( pbtio3 , al , bi etc .) thin - film 33 growth , finally separate the silicon wafer mold 31 , 32 and device sample 30 . just as described above , the p - si wafer could be the silicon wafer mold in present invention ( resistance is 3 - 4 ohm , thickness is around 4 - 5 um ). that means paste the photo - resistance and copper to the same diagram of top and bottom of device sample 30 , followed by wet - etching skill to make two same diagram silicon wafer mold 31 , 32 as the top and bottom of device sample30 . then align these two silicon wafer mold 31 , 32 with microscope and attached to top and bottom of device sample 30 with silver glue , and proceed the metal thin - film growth . finally , the sense film and cathode - anode of mems has completed , could go on the other process . etching technology normally means wet - etching skill by edp solvent ( ethlenediamine : 120 ml , pyrocatechol : 20 g , diwater : 60 ml , t = 100 ° c ., etchrate = 72 um / hour ), and silver glue could pasted on the undesired areas . after the metal thin - film growth by sputtering deposition , it could separate the silicon wafer mold and device sample just by some force on the pasted area . if have destructive or contaminated problems , its glued section is located on undesired area however , therefore , there is no destructive and contaminated problems by silver glue just directly going on dicing when packing . as regards different thin - film growth , it could use the optimize deposition rate of this invention . take the growth condition of pbtio3 as an example , atomicity is ti : pb = 1 : 1 . 12 , pressure / temp of substrate growth is 10 mtorr / 580 ° c ., air flow is ar : 100 sccm and o2 : 10 sccm separately during sputtering deposition . the deposition rate of pbtio3 thin - film is 10 a / min under this condition . the sem section view of pbtio3 thin - film as shown in fig3 ( please refer to the photograph on fig4 ), its deposition thickness is 1000 a (= 0 . 1 um ) when 100 minutes deposition . following is the detailed description of the preferred embodiment . take the infrared sensor device with pbtio3 thin - film in mems as example . please refer to the procedure shown in fig5 its procedure content as follows : ( a ). please refer to fig5 ( a ), first , prepare the monolithic n - si / p - si wafer which has growth in advance as the substrate 40 and go on cleaning , then locate the mask on the top and bottom of this substrate , deposit copper 42 after pasting the photoresist 41 . ( b ). please refer to fig5 ( b ), carry on the wet - etching by edp chemical solvent ( i . e . ethlenediamine : 120 ml , pyrocatechol : 20 g , di water : 60 ml , t = 100 ° c ., etchrate = 72 um / hour ) and setup the active cantilever sense area size , the effective area of cantilever section is 300 × 100 um , thickness is 3 um . ( c ). please refer to fig5 ( c ), prepare two p - si wafer as molds 43 and 44 and etching into same diagram by mask according to the procedures ( b )-( c ), then align with top and bottom of substrate with microscope and attached with silver glue to isolate the deposition area . ( d ). please refer to fig5 ( d ), go on pbtio3 thin - film 45 growth by sputtering deposition machine controlled by rf magnetic method , deposition thickness is 1000 a . ( e ). please refer to fig5 ( e ), go on bi growth as anode 46 onto pbtio3 thin - film by way of e - gun evaporation method , meantime , go on the al growth as cathode 47 at back side of cantilever device . ( f ). please refer to fig5 ( f ), finally , separate the top and bottom molds 43 , 44 from device sample and finish the wiring test . as shown in fig3 the growth thickness of pbtio3 need an optimized value when infrared sensing . it will breakdown due to the large input voltage if the film is too thin , otherwise , current cannot penetrate if film is too thick . through many testing , the pbtio3 thickness of 1000 a is the proper value to get the best light intensity . as shown in fig6 this is an example of pbtio3 thin - film infrared sense device with cantilever structure of mems . please refer to fig6 ( a ), fig6 ( c ) and the photographs on fig6 ( b ), fig6 ( d ), it indicates the front elevation and side elevation to the sem of sensor in cantilever structure of the micro - electro - mechanical system ( mems ) based on present invention that overcome the contaminated problem on the undesired areas . as shown in fig7 this is the v - i characteristics curve based on different thickness of pbtio3 thin - film layer to the present invention , the v - i curve is better when thin - film is thicker . as shown in fig8 this is the v - i characteristics curve under different infrared strength of final device sample to the present invention wherein wave length of inject light by the laser diode is 910 nm - power strength is 5 mw . the sensitivity ( i / idark ratio ) reach 64 when 100 uw wherein idark means dark current when inject light power equal 0 w . many changes and modifications in the above described embodiment of the invention can , of course , be carried out without departing from the scope thereof . accordingly , to promote the progress in science and the useful arts , the invention is disclosed and is intended to be limited only by the scope of the appended claims .