a detailed description of the present invention will now be made by referring to the accompanying drawings . as an example of one utilization of the deep trench of the present invention , fig1 shows the basic parts of a memory cell 10 , namely — a transistor and a capacitor , which is fabricated in and on a silicon substrate 11 and which , herein , is one cell of an array of cells of a dynamic random access memory ( dram ). herein , the memory cell is a cmos fet and comprises a pair of field effect transistors ( fet ) of which only one fet 12 is indicated by a bracket . associated with each fet is at least one trench capacitor , which is connected to and in combination with each fet . in fig1 only one capacitor 13 is shown . the capacitor 13 functions as a charge storage element and as a means for storing data in the memory cell 10 . disposed in the trench is an insulating material , such as silicon oxide , on the side walls and bottom and disposed between insulating material is a conductive material , such as doped polysilicon . at the upper segment of the deep trench capacitor , an oxide collar 14 is disposed around the periphery 15 of the trench and abuts a shallow trench isolation ( sti ) area 16 on side of the trench 13 opposite the fet 12 . herein , the fet 12 includes a p - well 17 , a n + source region 18 and a n + drain region 19 in the silicon substrate 11 on opposite sides of a gate oxide 20 on and in the substrate 11 underlying a gate electrode 21 comprising doped polysilicon and a refractive metal . insulating sidewalls 22 and 23 are disposed on the gate electrode 21 and were formed after the implantation of the n − impurities adjacent the gate electrode , which created lightly doped drain ( ldd ) regions 24 . the sidewalls 22 and 23 provide a mask for implanting the n + impurities of the source and drain regions , 18 and 19 , respectively . at the same time as the gate electrode 21 is formed , a conductive layer of doped polysilicon and refractive metal is disposed over and insulated from the trench by the sti 16 to provide a passover wordline 32 . means for physically and electrically connecting the trench capacitor 13 to the fet comprises a deeper n + region or strap 25 which is disposed in the drain region 19 as shown in fig1 . a conductive interposer 26 is positioned at the top of the trench 13 above the oxide collar 14 and abuts the n + region or strap 25 . to interface with other memory cells in the memory array , a bitline 27 extends above the gate electrode 21 . contact 28 is connected to the gate electrode 21 through a path not shown . contact 29 is connected to the source 18 through a path not shown . insulating layers 30 and 31 separate the contacts from the bitline and wordline contacts . the wordline , shown as the passover wordline 32 , is part of the memory array and , through the interaction of the bitline 27 and the wordline , the capacitor of the present invention is charged and discharged in the writing and reading data into and out of the memory cell shown in fig1 . another fet ( not shown ) and trench ( es ) ( not shown ) may be included in the memory cell adjacent the fet 12 . in addition , additional trenches may be included adjacent the trench 13 . referring now to fig2 to describe a plasma reactor for etching the high aspect deep trench ( es ), the plasma reactor or reactive ion etcher 40 includes a reactor chamber 41 formed by a insulated base 42 and a grounded conductive enclosure 43 . the reactor 40 includes a pair of parallel plates 44 and 45 with the plate 44 connected to a power source 46 with a control apparatus 47 and the plate 45 which is connected to ground 48 . the semiconductor wafer 11 is mounted on the plate 44 for both etching of the trench and removal the passivation film . to create the plasma , a gas source 49 and a gas inlet 50 , which is shown as single inlet but can be a plurality of inlets disposed around the chamber 41 , provide the gas or gases to the chamber . the gases can be mixed in desired proportions and / or changed in concentration by an control apparatus 51 connected to the gas source . to regulate the pressure of the chamber 41 , a pump 52 with an inlet 53 connected to the chamber and the pump is controlled by control apparatus 54 . during etching of a high aspect deep trench ( es ) in the wafer 11 , an etchant gas or gases flow through the inlet 53 to the chamber 41 with the rf power source 46 turned on . preferably , the power source 46 is set at about 1500 watts at a frequency of 13 . 56 megahertz by the control apparatus 47 . in accordance with the present invention , the power source 46 is regulated by the control apparatus 47 during etching of the trench ( es ). during etching , the initial pressure is preferably about 200 millitorr but can be as high as 500 millitorr . the pressure also is regulated during etching of the trench ( es ) by control apparatus 54 of the pump 52 . deep trench etching can result in the formation of black silicon which is caused by the presence of surface contaminates such as residual oxides that act as a localized etch mask . a etch method for eliminating / minimizing the formation of black silicon is disclosed and claimed in patent application ser . no . 09 / 675 , 433 , filed sep . 29 , 2000 and that application is incorporated by reference herein . turning now to fig3 - 8 , a silicon wafer 11 , herein p doped and with a p - well 17 for the fabrication of a cmos , is formed with a hard mask 64 which preferably comprises a layer of a pad silicon oxide 60 , a layer of silicon nitride 61 thereon , and , as the top layer , a layer of bsg / teos ( borosilicate glass / tetraethyloxysilicate ) 62 , with a top surface 63 , as shown in fig3 . the oxide layer 60 is thermally grown while the nitride layer 61 and the bsg / teos are chemically vapor deposited as is well know in the art . preferably , the bsg / teos is one micron thick because , being the top layer of the hard mask , it will be eroded during etching as will be shown in fig5 through 8 . a photoresist ( not shown ) is deposited on the bsg / teos as a hard mask and exposed and developed to create one or more openings in the photoresist for forming trenches in the wafer 11 . the hard mask 64 is plasma etched in an anisotropic manner using the reactive ion etcher ( rie ) 40 ( fig2 ) for reactive ion etching the hard mask in the opening ( s ) formed in the photoresist with the appropriate plasma gases as known in the art to form mask opening ( s ) 65 as shown in fig4 . following the mask opening , a deep trench ( es ) 66 as shown in fig5 is formed in the wafer 11 by a multi - step method preferably as described in patent application ser . no . 09 / 675 , 433 , filed sep . 29 , 2000 as modified by the method of the present invention . the inventive method comprises etching the semiconductor substrate 11 , herein silicon , at the mask opening ( s ) with a plasma gas comprising a fluorine gas and oxygen along with hydrogen bromide ( hbr ), herein in an anisotropic manner using rie apparatus described in conjunction with fig2 . during the deep trench etching , continuous deposition and etching reactions take place on surface of the mask 63 , side walls of the trench and bottom of the trench , which creates a passivation film 67 on the top surface 63 of the mask 64 , the side walls 69 of the trench and the bottom 70 of the trench as shown in fig5 . it will be noted that thickness of the bsg / teos layer 62 is shown to be slightly less than the thickness of the bsg / teos layer in fig4 before it was exposed to etching . in accordance with the present invention , the passivation film 67 at the bottom 70 of the trench 66 is removed periodically as shown in fig6 and 8 by introducing a fluorine - rich plasma and hydrogen bromide at low press and low power . although the bottom passivation film 67 is removed , the film on the side walls is not or , if it is , removal is minimal , thereby protecting the trench 66 from lateral etching which becomes more critical with decreasing groundrules . preferably , during etching , the plasma gas mixture is nf 3 / hbr / o 2 . for passivation film removal , the nf 3 is increased , with the hbr remaining at the same concentration , and the source of o 2 is shut off . the pressure is reduced to & lt ; 100 millitorr and the rf power is reduced to 500 . herein , the range of the specific plasma gas mixture is 10nf 3 0 - 50hbr . for the passivation film removal . although nf 3 is preferred , other fluorine containing compounds , such as sif 4 and sf 6 may be used for both dt etching and passivation film removal . a cycle of the invention of the present invention comprises etch in minutes , passivation film remove in seconds and etch in minutes . fig7 and 9 show this cycle . fig7 is the etch step with both etching of the trench 66 and a buildup of the passivation film 67 on the bottom 70 of the trench . fig8 shows the in situ passivation removal step at the bottom 70 of the trench 66 . after removal of the passivation film 67 , the trench 66 is etched deeper at a higher etch rate with again a buildup of the passivation film . a prior art etch method of etching for eight and one - half ( 8 ½ ) minutes without any passivation film removal resulted in a trench depth of 6 . 2 μm with 0 . 15 μm groundrules . by adding an extra minute of etching to this prior art method , a trench depth of 6 . 4 μm resulted . however , by adding the passivation film removal step of the present invention before etching an extra minute resulted in a trench depth of 6 . 5 μm . further , by adding an extra two minutes of etch time beyond the 8 ½ minutes of this prior art method , again without a film removal step , a trench depth of 6 . 6 μm resulted . in contrast , a trench depth of 6 . 9 μm resulted when the sequence was two extra minutes of etch time with the passivation film removal step of the present invention . fig7 and 9 show the additional trench depth achieved with the passivation film removal step . this figures also show the reduced thickness of the bsg / teos layer . it is desired not to reach the silicon nitride layer 61 in etching the trench ( es ) 66 and etching is normally stopped after 0 . 9 μm of the bsg / teos has been eroded of the beginning thickness of 1 μm . if difference thickness of bsg / teos are used , it is desired to stop when 0 . 1 μm of the bsg / teos remains . it was found that the above added etching time to the prior art method without the passivation film removal step of the present invention , only gave an etch rate of 0 . 2 μm / min whereas with passivation film removal step , the etch rate increased to 0 . 35 μm / min , thereby establishing that the etch rate is decreased by the passivation film at the bottom of the trench . accordingly , it is desirable to predetermine or set the etch rate to be at least 0 . 35 μm / min . it further was found that the time of in - situ passivation film removal step does not increase the trench depth because the depth did not increase when a 15 second removal step was used rather than a 7 second removal step . in addition , the passivation film removal step does not significantly widen the trench top opening , thus confirming that the passivation film removal step of the present invention removes predominately the passivation film at the bottom of the trench . these results and a comparison with the deep trench etch of the prior art and the inventive method is shown in the table below : trench depth − method etch time − min μm etch rate μm / min prior art 8 . 5 6 . 2 — dt etch prior art 9 . 5 6 . 4 0 . 2 dt etch plus 1 min additional etch inventive dt 9 . 5 6 . 5 0 . 35 etch plus 7 sec film removal plus 1 min addi - tional etch prior art 10 . 5 6 . 6 0 . 2 dt etch plus 2 min additional etch inventive dt 10 . 5 6 . 9 0 . 35 etch plus 7 sec film removal plus 2 min additional etch as seen in the above table the method of the present invention results in a deeper etch for the same etch time due a greater etch rate . yet only a short time , 7 seconds , is needed to remove the passivation film from the bottom of the trench thereby not substantially affecting the throughput of the etching of the deep trench . further , by keeping the removal of the passivation film at the bottom of the trench as short as possible , such as less than 15 seconds , the bsg / teos 62 of the hard mask 64 is not eroded . moreover , it was found that increasing the time to remove the passivation film , such as 15 seconds , does not increase the etch rate or result in a deeper trench . in addition , the non removal of the passivation film 69 on the side walls of the trench 66 in fig5 - 8 prevents etching of the side walls and precludes widening of the trench during etching . in fig5 the passivation film 67 is on the side walls 69 and the bottom 70 , but after the passivation film removal step , the film 67 remains on the side wall 69 and is removed from the bottom of the trench 66 as shown in fig6 . the trench is further etched in fig7 to deepen it and , in doing so , the passivation film 67 again forms on the bottom 70 of the trench 66 . after an additional passivation removal step as shown in fig8 the film 67 is removed from the bottom 70 in preparation for further etching to deepen the trench as shown in fig9 . it will noted that the bsg / teos layer 62 becomes thinner and thinner in fig5 - 8 until , in fig9 it is approaching a thickness , namely — 0 . 1 μm , at which further etching is not desirable . although this invention has been described relative to particular embodiments , it will be apparent to those skilled in the art that various changes and modification may be made without departing from the spirit and scope of the inventions defined in the following claims