in the following description , only those aspects useful for an understanding of the disclosure will be described in detail . other features , such as the particular applications of the disclosure , will not be described in detail , the disclosure being applicable to a broad range of applications . fig3 illustrates a drive circuit 300 for driving a load 301 , which is for example predominately resistive . the load is for example a lamp such as a car headlight or brake light , which could be an incandescent or led ( light emitting diode ) lamp , or another type of load such as a heating coil . the load 301 is coupled to an output node 303 of the drive circuit , node 303 being in turn coupled to a supply voltage vs via a power transistor 302 , which in this example is an n - channel mos transistor . the supply voltage vs is for example provided by a battery ( not shown ), and for example has a value of between 8 and 16 volts depending on the charge state of the battery . alternatively , a different power source could be used . the gate voltage v gate of nmos 302 is charged by a current supplied via a complementary pair of transistors 304 , 306 , and via a line 308 . in particular , line 308 is coupled between the gate of transistor 302 and the drains of transistors 304 and 306 . the gates of transistors 304 , 306 are coupled to receive the inverse pwm of a pwm signal . transistor 304 is a pmos transistor , and has its source coupled to a supply node 309 via a pmos transistor 310 forming one branch of a current mirror 311 . transistor 306 is an nmos transistor having its source coupled to the output node 303 via an nmos transistor 312 that forms one branch of a current mirror 313 . the supply node 309 is coupled via a diode 314 to the gate node of nmos transistor 302 , and via a diode 315 to the output of a charge pump 316 . in particular , diodes 314 and 315 have their cathodes coupled to node 309 . the current mirror 311 comprises a further branch comprising a pmos transistor 318 having its source coupled to node 309 , and its drain coupled to a variable current source 320 , which is in turn coupled to ground . transistor 318 has its drain coupled to its gate , such that , when transistor 304 is activated , the current through the transistor 310 matches or is proportional to the current i_drive set by the variable current source 320 . the current mirror 311 further comprises a branch comprising a pmos transistor 322 , having its source coupled to node 309 , and its drain coupled to the drain of an nmos transistor 324 of current mirror 313 . similarly , transistor 324 of current mirror 313 has its drain coupled to its gate , such that , when transistor 306 is activated , the current through transistor 312 matches or is proportional to the current through transistor 322 , and thus the current i_drive . the variable current source 320 is controlled by a gate current control block 326 , which receives as a feedback voltage either the voltage v out from the output node 303 of the circuit , or the gate voltage v gate from a gate node of nmos 302 . the gate current control block 326 advantageously provides a single , continuous control signal v_drive for controlling the variable current source , rather than discrete control signals , as will be described in more detail below . for example , the current for charging the gate of nmos 302 is equal to i_start + l ( v ref ), where i_start is a constant starting current value , l is a constant and v ref is a voltage level equal to either the feedback voltage v out or v gate , or a voltage level proportional to one of the feedback voltages . operation of the circuitry of fig3 will now be described in more detail with reference to the timing diagrams of fig4 . fig4 illustrates , in a first timing diagram 402 , the timing of a pwm signal , the inverse of which is provided to the gate nodes of transistors 304 and 306 of fig3 . a positive square pulse 404 has a rising edge 406 and a falling edge 408 . a second timing diagram 410 illustrates the output voltage v out at the node 303 of fig3 as a function of time . it should be noted that the output current , or the output power provided to the load would have a similar form . as illustrated , the output voltage v out starts low , for example at 0 v , before the pwm signal has been asserted . in this state , the transistor 306 is active . then , at the rising edge 406 of the pwm signal , transistor 306 is deactivated , and transistor 304 is activated , thereby injecting the current i_drive via transistors 312 , 306 and line 308 to the gate node of transistor 302 . this causes the output voltage v out to rise initially exponentially and then linearly , as shown labelled 412 in diagram 410 . then , as the output voltage nears the supply voltage vs , the transistor enters its ohmic region , in which the on state resistance is modulated by the gate - source voltage , causing the rate of increase of the output voltage to tail off , as shown by the curve portion labelled 414 . the output voltage flattens out at a value for example just below the supply voltage vs , even if the gate drive capability remains at its maximum value . this ensures low switching losses whilst keeping a smooth voltage curve leading to very low electromagnetic emissions . next , at the falling edge 408 of the pwm signal , the transistor 304 is deactivated , and transistor 306 is activated . thus current i_drive now discharges the gate of nmos 302 . as illustrated in the portion of the curve labelled 416 , the fall of the output voltage v out is slow to begin with , as the transistor 302 leaves its on state resistance modulation region , but the voltage fall accelerates quickly in a symmetrical fashion with respect to the turn - on voltage rise . then , as shown by the portion of curve labelled 418 , due to the falling discharge current , the output voltage follows an exponential decay until a low value , such as 0 v , is again reached . the timing diagram 420 of fig4 illustrates the current i_drive that charges and discharges the gate of transistor 302 . as illustrated , the current starts at a minimum value i_start , for example equal to around 10 μa . it then for example follows a similar curve to the output voltage , peaking at a value corresponding to the platform of the output voltage v out . thus it should be noted that the current i_drive does not fall as the output voltage nears its peak , but stays at its maximum value . only the current delivered to the gate of transistor 302 starts to reduce as the gate voltage approaches the charge pump output voltage , causing the current source 310 to saturate . it can be seen that the current monotonically increases during the charging of the gate of nmos 302 , and monotonically decreases during the discharging of the gate of nmos 302 . examples of alternative implementations of the gate current control block 326 of fig3 will now be described with reference to fig5 a to 5d . fig5 a illustrates the variable current source 320 , in this example implemented by a single nmos transistor . the control block 326 comprises an operational amplifier 502 , which receives at a positive input the output voltage v out , and at a negative input a varying reference voltage at a node 504 . the output of the operation amplifier 502 is coupled to the gate of a pmos transistor 506 , which is coupled between a supply voltage v dd , for example equal to vs or another internally regulated supply , and node 504 . a resistor 508 is coupled between node 504 and ground . a further pmos transistor 510 is coupled between supply voltage v dd and a node 511 , and a fixed current source 514 is coupled in parallel between v dd and node 511 . current source 514 conducts the current i_start . node 511 is coupled to ground via an nmos transistor 512 , which has its drain and gate coupled together and to the gate of transistor 320 . thus transistors 320 and 512 form a current mirror , meaning that a current i_drive flowing through transistor 320 is equal to k ( i_start + v out / r ), where k is a constant that depends on the ratio between transistors 320 and 512 , and r is the resistance of resistor 508 . fig5 b illustrates an alternative embodiment in which the output voltage v out is coupled to the anode of a diode 520 , the cathode being coupled to a resistor 522 , which is in turn coupled to ground via a transistor 524 . the variable current source 320 in this example comprises an nmos transistor 526 coupled in parallel with a fixed current source 528 , which conducts the current i_start . transistor 524 has its gate and drain terminals coupled together , its gate terminal further being coupled to the gate of transistor 526 . thus transistors 524 and 526 together form a current mirror such that the current through transistor 526 matches or is proportional to the current through resistor 522 . the total current i_drive through the variable current source 320 is thus equal to i_start + k ( v out − vo )/ r , where r is resistance of resistor 522 , and vo is equal to vf + vg0 , where vf is the voltage drop across the diode , and vg0 is the gate voltage of transistor 524 . fig5 c illustrates a further embodiment of the circuitry 326 , which is the same as that of fig5 b , except that the diode 520 is replaced by a voltage offset 530 positioned between resistor 522 and the output of an operational amplifier 532 . the positive input of operational amplifier 532 receives the gate voltage v gate of the nmos transistor 302 of fig3 , and the negative input is coupled to the output of the operational amplifier 532 . the voltage offset 530 has a value of vth . in this embodiment , the current through resistor 522 is equal to ( v gate − v1 )/ r , where v1 is equal to vth + vg2 , where vg2 is the source - gate voltage of transistor 524 . thus , in this example , the output current i_drive is equal to i_start + k ( v gate − v1 )/ r . fig5 d illustrates yet a further example , similar to the embodiment of fig5 c , except that the operational amplifier 532 and voltage offset 530 are replaced by an nmos transistor 540 coupled between v dd and the resistor 522 . the gate of transistor 540 receives the gate voltage v gate of nmos 302 . the current through the resistor 522 is thus equal to ( v gate − v1 )/ r , where v1 is now equal to vg1 + vg2 , wherein vg1 is the source - gate voltage of transistor 540 , and vg2 is the source - gate voltage of transistor 524 , and again the output current i_drive is equal to i_start + k ( v gate − v1 )/ r . fig6 illustrates electronic circuitry 600 comprising a supply module 601 for supplying electrical loads 602 , 603 and 604 . the supply module 601 comprises a pwm signal generator 606 , which provides pwm signals to drive circuits 608 , 610 and 612 . the drive circuits 608 to 612 are for example each implemented by the circuit 300 of fig3 , with gate current control blocks according to one of the circuits of fig5 a to 5d . the drive blocks 608 to 612 provide corresponding output signals to load 602 , 603 and 604 respectively . the loads could for example be heating coils , lamps or other types of load . obviously , the number of drive blocks 608 to 612 will depend on the number of loads to be driven , and in some cases more than one load could be supplied by the same drive block . an advantage of the embodiments described herein is that very low electromagnetic emission can be achieved with low switching losses . in particular , due at least in part to the continuous control of the variable current source 320 , the output voltage during a pwm pulse varies in a smooth fashion , without the ridges present in the curve 204 of fig2 . such ridges lead to high frequency electromagnetic emissions . furthermore , by controlling both charge and discharge of the power transistor gate using the same variable current source , a close matching can be achieved between the rising and falling curves of the output voltage . this helps to further reduce electromagnetic emissions . yet a further advantage is that by making the charge current proportional to the output voltage v out , and making it monotonically increasing , a fast rise in output voltage can be achieved . indeed , the current pattern illustrated by timing diagram 206 of fig2 applies the maximum current at only certain points during charge of the transistor gate , and very low currents at other times , leading to high switching losses . a further advantage of the embodiments described herein is that the implementation is simple , and comparators are not needed . having thus described at least one illustrative embodiment of the disclosure , various alterations , modifications and improvements will readily occur to those skilled in the art . for example , while a number of examples of gate current control blocks have been provided in fig5 a to 5d , it will be apparent to those skilled in the art that different circuits could be used . furthermore , features of the circuits described could be combined in any combination . furthermore , various modifications to the circuit of fig3 will occur to those skilled in the art . for example , it will be apparent to those skilled in the art that implementations using other forms of continuous functions , including non - linear functions , for controlling the current i_drive based on the output voltage v out or gate voltage v gate would be possible . while embodiments based on cmos technology have been described , it will be apparent to those skilled in the art that implementations in other transistor technologies would be possible , such as bipolar transistors . the various embodiments described above can be combined to provide further embodiments . these and other changes can be made to the embodiments in light of the above - detailed description . in general , in the following claims , the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and the claims , but should be construed to include all possible embodiments along with the full scope of equivalents to which such claims are entitled . accordingly , the claims are not limited by the disclosure .