preferred embodiments of the present invention will now be described in detail in accordance with the accompanying drawings . however , the dimensions , shapes and relative positions of the constituent parts shown in the embodiments should be changed as convenient depending on various conditions and on the structure of the apparatus adapted to the invention , and the invention is not limited to the embodiments described herein . a description will now be given of a first embodiment of the present invention . fig1 is a diagram showing a sectional view of a solid - state image sensing device of a first embodiment of the present invention . it should be noted that , in fig1 , elements that are the same as those shown in fig1 are assigned the same reference characters and a description thereof is omitted . in the configuration shown in fig1 , the flattening using the flattening film 112 shown in fig1 is not performed and the passivation film part 107 is formed directly on the interlayer dielectric and the third metal wiring layer 106 , with the height difference with the third metal wiring layer 106 not covered but left as is . with such a construction , the configuration shown in fig1 of the present embodiment can be made thinner by an amount equal to the flattening film 112 that covers the height difference of the topmost metal layer . therefore , compared to the configuration shown in fig1 , the height from the photoelectric converter element 103 of the light - receiving area pixel 102 to the bottom of the inner lens 108 can be lowered . as a result , the light collecting efficiency can be increased , and in particular a decrease in sensitivity when the f number is small can be remedied . fig2 shows the f number dependency characteristics of the configuration of the present embodiment and the configuration shown in fig1 . as shown in fig2 , with the configuration of the first embodiment the sensitivity when the f number is small is improved compared to the configuration employing the conventional technique shown in fig1 . next , a description will be given of steps in the production of the solid - state image sensing device according to the first embodiment of the present invention shown in fig1 , with reference to fig3 through 10 . first , as shown in fig3 , a semiconductor member 121 composed of a silicon wafer or the like is prepared and an element separation area 122 is formed on the semiconductor member 121 by locos ( local oxidation of silicon ), sti ( shallow trench isolation ) or the like . next , a photo - resist pattern is formed , ion - injection and heating processes are performed , and , for example , a diffusion layer that becomes the cathode or the anode of a photodiode ( photoelectric converter element 103 ) is formed on the semiconductor member 121 . then , by thermal oxidation , cvd ( chemical vapor deposition ), sputtering , coating or the like , a first dielectric 123 is formed on the semiconductor member 121 . the top surface of the first dielectric 123 is flattened by cmp ( chemical mechanical planarization ) or the like , enabling the accuracy of the patterning of the next process to be improved . next , a metal film consisting of al , mo , w , ta , ti or cu , or an alloy composed chiefly of these elements , is formed on the first dielectric 123 by sputtering , cvd , electro - plating or the like . further , by removing by etching a portion located above the light - receiving surface of the photoelectric converter element 103 , a first pattern ( first metal wiring layer ) 104 of a desired shape is formed . next , a second dielectric 124 consisting of sio or a material composed chiefly of sio is formed on the first dielectric 123 and the first metal wiring layer 104 by cvd . the top surface of the second dielectric 124 is flattened by cmp or the like to enable the accuracy of the patterning of the next process to be improved . next , a metal film consisting , like the first metal wiring layer 104 , of al , mo , w , ta , ti or cu , or an alloy composed chiefly of these elements , is formed on the second dielectric 124 by sputtering , cvd , electro - plating or the like . further , by removing by etching a portion located above the light - receiving surface of the photoelectric converter element 103 , a second pattern ( second metal wiring layer ) 105 of a desired shape is formed . it should be noted that the first and second metal wiring layers 104 , 105 , in addition to functioning as wiring used in the transmission of electrical signals from the photoelectric converter element 103 , also functions as light - shielding planes that prevents light that should enter one photoelectric converter element 103 from entering another photoelectric converter element 103 . next , a third dielectric 125 consisting of sio or a material composed chiefly of sio is formed on the second dielectric 124 and the second metal wiring layer 105 by cvd . the top surface of the third dielectric 125 is flattened by cmp or the like , enabling the accuracy of the patterning of the next process to be improved . next , a metal film consisting , like the first pattern 104 and the second pattern 105 , of al , mo , w , ta , ti or cu , or an alloy composed chiefly of these elements , is formed on the third dielectric 125 by sputtering , cvd , electro - plating or the like . further , by removing by etching a portion located above the light - receiving surface of the photoelectric converter element 103 , a third pattern ( third metal wiring layer ) 106 of a desired shape is formed . the third metal wiring layer 106 is formed in an area outside an effective pixel area and also includes a light - shielding member for forming a light - shielded area ( optical black ) for creating a reference signal . next , a passivation layer / inner lens formation film 107 ′ composed of sin , sion or sio and the like is formed on the third metal wiring layer 106 and the third dielectric 125 by cvd . then , as shown in fig3 , an etching mask 126 for forming the inner lens 108 is formed on the passivation layer / inner lens formation film 107 ′ by photolithography . thereafter , as shown in fig4 , the etching mask 126 is heated and reflowed to form a convex lens having substantially the same shape as the shape of the inner lens 108 . it should be noted that , in the present embodiment , the inner lens is also formed in the light - shielded area . next , etching is performed over the entire passivation layer / inner lens formation film 107 ′, and as shown in fig5 the convex lens shape of the etching mask 126 is transferred to the passivation layer / inner lens formation film 107 ′ to form the inner lenses 108 . for the etching gas , cf 4 , chf 3 , o 2 , ar , he and the like can be used . the portions of the passivation layer / inner lens formation film 107 ′ that remain after etching become the passivation layer 107 . then , as shown in fig6 , in order to open a pad part 128 ′ by photolithography , a resist pattern 127 having such an opening pattern is formed on the passivation layer 107 and the inner lenses 108 . then , as shown in fig7 , the passivation layer 107 located above the pad part 128 is removed by photolithography . thereafter , as shown in fig8 , the first flattening film 109 is formed on the pad part 128 , the passivation layer 107 and the inner lenses 108 , and a color filter layer 110 is formed on the first flattening film 109 . the color filter layer 110 has a color pattern that selects the color of the light stroking on the photoelectric converter elements 103 underneath the color filter layer 110 . then , as shown in fig9 , a second flattening film 109 is formed on the color filter layer 110 , and microlenses 111 are formed thereon using resist patterning and reflow . finally , as shown in fig1 , the first and second flattening films 109 that remain on the pad part 128 are removed by etching so as to open the pad part 128 upward . through the steps described above the solid - state image sensing device shown in fig1 can be manufactured . next , a description will be given of a second embodiment of the present invention . fig1 is a diagram showing a sectional view of a solid - state image sensing device according to a second embodiment of the present invention , showing an edge part of an solid - state image sensing device having a light - receiving area and a light - shielded area . in fig1 , elements identical to those shown in fig1 are assigned identical reference numerals and descriptions thereof are omitted . in the configuration shown in fig1 , an inner lens 108 is also formed on the third metal wiring layer 106 that is the light - shielded area , and therefore , in order to prevent the microlens 111 formed at the boundary between the light - receiving area and the light - shielded area from tilting when formed , the first flattening film 109 must be made thick . by contrast , with the configuration of the second embodiment shown in fig1 , no inner lens 108 is formed on the third metal wiring layer 106 that is the light - shielded area . as a result , the first flattening film 109 can be made thinner than that in the configuration shown in fig1 . consequently , light collecting efficiency can be increased , and in particular a decrease in sensitivity when the f number is small can be further remedied . the method of manufacturing the configuration shown in fig1 , though it differs from the method described above insofar as an etching mask 126 for forming the inner lens 108 is not formed in the light - shielded area as shown in fig1 , is otherwise the same as the method of manufacturing the first embodiment described above , and therefore a description thereof is omitted here . it should be noted that the step shown in fig1 corresponds to the step shown in fig3 . according to the second embodiment , the distance from the photoelectric converter 3 to the microlenses 111 can be reduced , enabling light collecting efficiency to be further increased . fig1 shows a sectional view of another solid - state image sensing device of the present invention , showing an edge part of a solid - state image sensing device having a light - receiving area and a light - shielded area . in fig1 , elements identical to those shown in fig1 are assigned identical reference numerals and descriptions thereof are omitted . unlike the first and second embodiments described above , the configuration shown in fig1 has only the first metal wiring layer 104 , without the second metal wiring layer 105 . in addition , fig1 shows a sectional view of another solid - state image sensing device of the present invention , showing an edge part of a solid - state image sensing device having a light - receiving area and a light - shielded area . in the configuration shown in fig1 , the thickness of the third metal wiring layer 206 is thinner than that of the third metal wiring layer 106 of the second embodiment and the thickness of the inner lens 108 is formed substantially the same as the height difference of the passivation layer 107 . thus , as described above , in the configurations shown in fig1 and fig1 , the height from the photoelectric converter element 103 of the light - receiving area pixel 102 to the bottom of the inner lens 108 can be lowered , enabling light collecting efficiency to be increased . as many apparently widely different embodiments of the present invention can be made without departing from the spirit and scope thereof , it is to be understood that the invention is not limited to the specific embodiments thereof except as defined in the appended claims . this application claims the benefit of japanese patent application no . 2005 - 195281 filed on jul . 4 , 2005 , which is hereby incorporated herein by reference herein in its entirety .