fig1 shows an arrangement for performing the method . a semiconductor substrate 5 is provided , which contains a light - sensitive integrated circuit 1 . the semiconductor substrate 5 may be a silicon wafer , for example . the light - sensitive integrated circuit 1 may be isolated to form a semiconductor chip 8 in a later manufacturing step . a testing card 6 for integrated circuits is positioned over the semiconductor substrate 5 . light - emitting diodes 71 , 72 are mounted on the top of the testing card 6 . these light - emitting diodes 71 , 72 irradiate the light - sensitive integrated circuit 1 with light of different wavelengths . in this case , the wavelength of the light with which the light - emitting diode 71 illuminates the light - sensitive integrated circuit 1 is different from the wavelength of the light with which the light - emitting diode 72 illuminates the light - sensitive integrated circuit 1 . the light - emitting diodes 71 , 72 are connected using connection lines 403 , 404 to a test system 406 , which supplies the light - emitting diodes 71 , 72 with current . the testing card 6 is in turn independently connected to the test system 406 using one or more connection lines 405 . testing needles 401 , 402 are provided for contacting the testing card 6 with the semiconductor substrate 5 . these testing needles 401 , 402 are used for the purpose of being placed on provided contact areas of the sensitive integrated circuit 1 and either absorbing current generated in the light - sensitive integrated circuit 1 or storing data on the light - sensitive integrated circuit 1 . it is also to be noted that the testing card 6 is designed so that the light - emitting diodes 71 , 72 positioned on the top of the testing card 6 may illuminate the light - sensitive integrated circuit 1 positioned below the testing card 6 . such a suitable design of the testing card 6 may , for example , comprise the testing card 6 having an opening at the illumination point of the light - sensitive integrated circuit 1 . fig2 shows the output signals , measured using the arrangement from fig1 , of a photodiode located on the light - sensitive integrated circuit . in this case , the sensitivity e of the photodiode , measured in ma per watt of irradiated optical power , is plotted over the irradiated wavelength λ , plotted in the unit nm . fig2 shows a sensitivity curve 3 , which may be determined through interpolation from the wavelength - dependent sensitivities of the photodiode measured using the arrangement of fig1 . it is to be noted that the curve 3 may have a somewhat different shape for each chip , as a function of the manufacturing tolerances , which may shift the interference pattern by up to 20 μm . the intervals of the measured wavelengths λ 1 , λ 2 , λ 3 are to be selected in this case so that the intervals , represented by differences between two wavelengths , e . g ., λ 2 − λ 1 , are smaller than the intervals δλ , between a relative minimum and a relative maximum of the sensitivity curve 3 . however , measured wavelengths whose intervals are greater than δλ may also be used for interpolation and / or extrapolation , if additional information about the properties of the sensitivity curve is also stored on the chip and only small changes are corrected . the sensitivities of the photodiode thus measured may be used for the purpose of being compared in the test system 406 with a desired setpoint sensitivity . different setpoint curves 21 , 22 are indicated as examples in fig2 . for example , the setpoint curve 21 may be used if one only desires to eliminate the oscillations of the sensitivity curve 3 and generate a wavelength - independent output signal of the photodiode . in this case , a correction value 4 is calculated for each measured value 31 , 32 , 33 associated with a measured wavelength λ 1 , λ 2 , λ 3 , which represents the difference between the measured value 31 measured at the wavelength λ 1 and the value of the setpoint curve 21 specified at the wavelength λ 1 , for example . it is to be noted in this connection that the correction value 4 does not necessarily represent the simple difference of the value of the setpoint curve 21 at the wavelength λ 1 and the measured value 31 at the wavelength λ 1 . the correction value 4 may also represent a correction factor or a more complicated correction function . as a further example , the setpoint curve 22 is shown in fig2 , which is used if the light sensitivity of the photodiode is to grow linearly with the light wavelength . in this case , the correction may be performed analogously to the way described for the setpoint curve 21 . the correction values 4 are stored on the light - sensitive integrated circuit after performing the measurement and after performing the comparison , in the test system 406 , for example . however , only information about the correction values 4 , in the form of interpolated curve , for example , may also be stored . fig3 shows an example of a semiconductor chip 8 which may be used for the method according to fig1 and fig2 and / or which represents a final product of the method . the semiconductor chip 8 comprises a light - sensitive integrated circuit 1 , which in turn comprises photodiodes 91 , 92 and zener diodes 101 , 102 and further circuits 200 . after completion of the measurement , as described in fig2 , correction values 4 or an entire correction curve is stored on the semiconductor chip 8 . the storage is performed with the aid of the zener diodes 101 , 102 , for example , whose electrical properties may be changed permanently by applying a current once . furthermore , a temperature sensor 300 may be provided on the semiconductor chip 8 , which may be an on - chip temperature sensor , for example , that contains polycrystalline silicon . if information about an entire correction curve , i . e ., for all wavelengths in a specific wavelength range , is stored on the integrated circuit , a correction both in regard to the sensitivity of the photodiode on the chip and in regard to the temperature dependence of the radiation source may be performed at every arbitrary wavelength in the wavelength range , but only in the event of known temperature behavior of the radiation source .