the following description includes terms , such as upper , lower , first , second , etc . that are used for descriptive purposes only and that are not to be construed as limiting . the embodiments of a device or article of the present invention described herein can be manufactured , used , or shipped in a number of positions and orientations . the terms “ die ” and “ processor ” generally refer to the physical object that is the basic workpiece that is transformed by various process operations into the desired integrated circuit device . a component is typically a packaged die made of semiconductive material that has been singulated from a wafer after integrated processing . wafers may be made of semiconducting , non - semiconducting , or combinations of semiconducting and non - semiconducting materials . reference will now be made to the drawings , wherein like structures will be provided with like reference designations . in order to show the structures of embodiments of the present invention most clearly , the drawings included herein are diagrammatic representations of inventive articles . thus , the actual appearance of the fabricated structures , for example in a photomicrograph , may appear different while still incorporating the essential structures of embodiments of the present invention . moreover , the drawings show only the structures necessary to understand the embodiments of the present invention . additional structures known in the art have not been included to maintain the clarity of the drawings . [ 0021 ] fig1 is an elevational section of a system 110 according to an embodiment . the system 110 relates to a decoupling capacitor system . the system 110 includes a substrate 112 , and an electrical first bump 114 that is adhered to a substrate first pad 116 . in one embodiment , the substrate 112 is a motherboard for a digital computer , an electronic apparatus , or the like . in another embodiment , the substrate 112 is a main board for a specialized device such as a hand - held personal digital assistant ( pda ) or the like . in one embodiment , the substrate 112 is a board for a wireless device or the like . the electrical first bump 114 is typically a high melting - point solder that includes a top end 118 and a bottom end 120 . adhesion of the electrical first bump 114 to the substrate first pad 116 is by a low melting - point solder 122 . both the electrical first bump 114 and the low melting - point solder 122 may be a pb - containing solder or a substantially pb - free solder . by “ substantially pb - free solder ” it is meant that the solder is not designed with pb content according to industry trends . one example of a pb - containing solder includes a tin - lead solder . in selected embodiments , pb - containing solder is a tin - lead solder composition such as from sn97pb . one tin - lead solder composition that may be used with a top structure 124 that is to be mounted over the substrate is a sn37pb composition . in any event , the pb - containing solder may be a tin - lead solder comprising sn x pb y , wherein x + y total 1 , and wherein x is in a range from about 0 . 3 to about 0 . 99 . in one embodiment , the pb - containing solder for the electrical first bump 114 is a tin - lead solder composition of sn97pb , and the lower melting - point solder 122 is a tin - lead solder composition of sn37pb . a top structure 124 is disposed at the top end 118 of the electrical first bump 114 . in one embodiment , the top structure 124 includes an electronic component 126 such as a processor , an asic , or the like . in one embodiment , the top structure 124 includes a power socket 128 that carries an electronic component 126 . in one embodiment , the top structure 124 includes an interposer ( also represented generally as item 128 ) that may make connection with an electronic component and / or a power socket . in one embodiment , the top structure 124 includes a combination of at least two of an electronic component , a power socket , and an interposer . alternatively , the top structure 124 is a packaged electronic component without a power socket or the like , or without an interposer or the like , or without either . a decoupling capacitor 130 is disposed above the substrate 112 and is substantially contiguous to the electrical first bump 114 . the capacitor 130 includes a power or vcc terminal 132 and a ground or vss terminal 134 . by “ substantially contiguous ” it is meant that the capacitor 130 and the electrical first bump 114 are electrically touching at or near the power terminal 132 . in another embodiment , “ substantially contiguous ” means that there is no structure laterally closer to the electrical first bump 114 than the power terminal 132 of the capacitor 130 . in yet another embodiment , “ substantially contiguous ” means that the decoupling capacitor is placed proximate the electrical first bump 114 , within about one lateral diameter ( in the x - dimension ) of the electrical first bump 114 . in one embodiment , the capacitor 130 is placed beneath the electronic component 126 and is substantially centered along a symmetry line 136 that bisects the electronic component 126 in the x - dimension . more particularly , the capacitor 130 is disposed between the electrical first bump 114 and an electrical second bump 138 that is substantially contiguous to the ground terminal 134 . the electrical second bump 138 is adhered to a substrate second pad 140 . like the electrical first bump 114 , the electrical second bump 138 is typically a high melting - point solder that includes a top end 142 and a bottom end 144 . adhesion of the electrical second bump 138 to the substrate second pad 140 is by the low melting - point solder 122 . the electrical first bump 114 includes a first characteristic vertical dimension ( in the z - dimension ) that originates at or near the substrate first pad 116 and that terminates near the top structure 124 . the electrical second bump 138 includes a second characteristic vertical dimension that is substantially equal to the first characteristic vertical dimension of the electrical first bump 114 . the capacitor 130 includes a third characteristic vertical dimension that originates at or near the substrate first pad 116 and that terminates below the top structure 124 . in one embodiment , the capacitor 130 is provided in parallel with at least one other capacitor ( not pictured , but either above or below the plane of fig1 ) with relation to the electronic component 126 . other electrical bumps 146 and 148 are depicted in fig1 . in one embodiment , the other electrical bumps 146 and 148 are additional power and ground contacts for the electronic component 126 . in an embodiment as depicted in fig1 a power plane 150 and a ground plane 152 are depicted within the substrate 112 . the other electrical bumps 146 and 148 are not depicted as connected to the power plane 150 or the ground plane 152 and are consequently for data and control signaling to the electronic component 126 . a simplified electrical path is depicted in fig1 . current at a given potential ( vcc ) passes from the power plane 150 into the electrical first bump 114 . under proper transient conditions caused by a transient load in the electronic component 126 , the power also passes through the power terminal 132 of the capacitor 130 and continues through a loop - turnaround sub - path 154 ( generically depicted ) that supplies power to the electronic component 126 . thereafter , a ground current passes from the loop - turnaround sub - path 154 into the electrical second bump 138 and the ground terminal 134 of the capacitor 130 . this simplified path has various characteristics . one characteristic is that the current loop can be shorter than the conventional , on the order of up to about 15 times shorter . in another embodiment , the current loop is shorter than the conventional , on the order of up to about 40 times shorter . another characteristic is that no additional conductive material is needed in the substrate 112 compared to its need in conventional applications . another characteristic is that the dc path and the ac path are identical . [ 0031 ] fig1 depicts the electrical first bump 114 and the electrical second bump 138 as having an oblong shape that gives each bump an aspect ratio ( height : width ) of greater than one . in one embodiment , the standoff 156 , the measure of clearance between the substrate 112 and the top structure 124 , is increased by having electrical bumps with an aspect ratio of greater than one , although the aspect ratio may be substantially equal to one . where a high - performance capacitor is selected , it may have a third characteristic vertical dimension that is less than the first characteristic vertical dimension of the electrical first bump 114 . the standoff 156 is illustrated as being achieved due to the aspect ratio of the electrical first bump 114 and the electrical second bump 138 . although a high melting point solder is depicted at each electrical coupling in fig1 ( as well as fig2 - 3 , and 6 - 10 ), it is noted that in one embodiment , not all electrical couplings have the high melting - point solder . in one embodiment , at least one electrical coupling that includes a capacitor ( such as capacitor 130 in fig1 ) does not include a high melting - point solder . in another embodiment , only perimeter electrical couplings include a high melting - point solder . in another embodiment , interspersed electrical couplings , such as grouped or alternating electrical couplings include a high melting - point solder . by way of non - limiting example for this embodiment , an alternating distribution of the high melting - point solder is distributed around the perimeter of a substrate such as substrate 112 . in another embodiment , at least one electrical coupling that is adjacent a capacitor ( such as the electrical bumps 146 and 148 in fig1 ) has the high melting - point solder and the electrical couplings that touch the capacitor 130 do not . in another embodiment , the high melting - point solder is distributed to selected electrical couplings that amount to less than the total thereof , according to a specific application that allows the standoff 156 to be maintained . in another embodiment a fraction of the capacitor - sharing electrical couplings have the high melting - point solder . as depicted in the figures , one embodiment includes the high melting - point solder at each electrical coupling . in a general embodiment , the choice to mount the decoupling capacitor upon the substrate or on the top structure is influenced , among other reasons , by transient time response , di / dt , heat expansion disparities between the capacitor structure and the structure it is mounted upon , and combinations thereof . [ 0034 ] fig2 is an elevational section of another system 210 according to an embodiment . the decoupling capacitor system 210 illustrated in fig2 is similar to the decoupling capacitor system 110 depicted in fig1 . in some embodiments , a capacitor 230 is disposed upon the top structure 224 instead of on the substrate 212 . this places the capacitor 230 even closer to the electronic component 226 , where sufficient standoff 256 allows . [ 0035 ] fig2 a is a detail section of fig2 taken along the line 2 a . fig2 a depicts an alternative embodiment . in contrast to the capacitor 230 in fig2 the capacitor 230 in fig2 a has been mounted in the solder 222 with a capacitor standoff 231 such that the capacitor 230 is not in direct contact with the socket 228 against the underside . the capacitor standoff 231 allows for more thermal expansion differences because the capacitor 230 is substantially suspended in the softer solder 222 . similar to the structure depicted in fig1 the structure includes a substrate 112 , an electrical first bump 214 . adhesion of the electrical first bump 214 to a substrate first pad 216 is by a low melting - point solder 222 . a top structure 224 includes a power socket 228 that carries an electronic component ( not pictured ). the decoupling capacitor 230 is disposed above the substrate 212 and is substantially contiguous to the electrical first bump 214 . the capacitor 230 includes a power or vcc terminal 232 and a ground or vss terminal 234 . by “ substantially contiguous ” it is meant that the capacitor 230 and the electrical first bump 214 are electrically coupled at or near the power terminal 232 . an electrical second bump 238 is coupled to the vss terminal 234 through the solder 222 . by disclosure of this embodiment with the capacitor standoff 231 , it is noted that this embodiment is an alternative embodiment for each structure depicted in this disclosure . [ 0037 ] fig3 is an elevational cut - away of yet another system 310 according to an embodiment . the decoupling capacitor system 310 illustrated in fig3 is similar to the decoupling capacitor system 110 depicted in fig1 and to the decoupling capacitor system 210 depicted in fig2 . in the embodiment illustrated in fig3 a capacitor 330 is disposed both upon the substrate 312 and upon the top structure 324 . in comparison to the capacitors depicted in fig1 and 2 , the capacitor 230 has a larger discharge volume , but may have a slower response time to a transient , di / dt , of the component 326 . in one embodiment , the capacitor 330 is limited in its characteristic vertical dimension by the standoff 356 of the decoupling capacitor system 310 . [ 0038 ] fig4 is a top plan of the substrate 112 depicted in fig1 taken along the section line 4 - 4 . the view along the section line 4 - 4 in fig1 is seen at the section line a - a ′ in fig4 . the substrate 112 includes the substrate first pad 116 that makes contact with the electrical first bump 114 ( refer to fig1 ), and it includes the substrate second pad 140 that makes contact with the electrical second bump 138 ( refer to fig1 ). it is noted that the perimeters of the substrate first pad 116 that and the substrate second pad 140 have been configured to accommodate the substantially rounded shape of the bump at one end , and the substantially rectangular shape of the capacitor at the opposite end . still referring to fig4 a plurality of data / control pads 158 are additionally depicted . fig4 illustrates the footprint of the capacitor 130 by a dashed - line perimeter . fig4 illustrates another capacitor footprint 130 ′ by a dashed - line perimeter . the capacitor 130 ′ would appear in fig1 below the plane of the figure . as illustrated , the substrate first pad 116 accommodates both the electrical first bump 114 ( refer to fig1 ) and the power terminal 132 ( refer to fig1 ) of the capacitor 130 . accordingly there exists an article embodiment that includes the substrate first pad 116 ( coupled to vcc ) that includes a first region that has a shape or footprint characteristic of the electrical first bump 114 ( coupled to vcc ), and a second region that has a shape or footprint characteristic of the power terminal 132 . in one embodiment , it is preferable to tie together a plurality of vcc sources as pads , and to tie together a plurality of vss sources as pads , as will now be discussed with reference to fig5 . [ 0041 ] fig5 is an alternative top plan of the substrate 112 depicted in fig1 taken along the section line 4 - 4 . the view of the substrate 112 in fig5 is similar to the view of the substrate 112 in fig3 . the view along the section line 4 - 4 in fig1 is seen at the section line b - b ′ as seen in fig5 . the substrate 112 includes the substrate first pad 116 that makes contact with the electrical first bump 114 ( refer to fig1 ), and it includes the substrate second pad 140 that makes contact with the electrical second bump 138 ( refer to fig1 ). still referring to fig5 a plurality of data / control pads 158 are additionally depicted . fig5 illustrates the footprint of the capacitor 130 by a dashed - line perimeter . fig5 illustrates another capacitor footprint 130 ′ by a dashed - line perimeter . the capacitor 130 ′ would appear in fig1 below the plane of the figure . as illustrated , the substrate first pad 116 accommodates both the electrical first bump 114 ( refer to fig1 ) and the power terminal 132 ( refer to fig1 ) of the capacitor 130 . [ 0042 ] fig5 a is yet another alternative top plan of the substrate 112 depicted in fig1 taken along the section line 4 - 4 . the view of the substrate 112 in fig5 a is a close - up of the substrate first pad 116 that makes contact with the electrical first bump 114 ( refer to fig1 ), and it includes the substrate second pad 140 that makes contact with the electrical second bump 138 ( refer to fig1 ), although the shapes thereof can be different . fig5 a illustrates the footprint of the capacitor 130 by a dashed - line perimeter . fig5 a illustrates another capacitor footprint 130 ′ by a dashed - line perimeter . the capacitor 130 ′ would appear in fig1 below the plane of the figure . fig5 a illustrates another capacitor footprint 130 ″ by a dashed - line perimeter . the capacitor 130 ″ would appear in fig1 below the plane of the figure . as illustrated , the substrate first pad 116 accommodates both the electrical first bump 114 ( refer to fig1 ) and the power terminal 132 ( refer to fig1 ) of the capacitor 130 . in one embodiment , several capacitors are deployed along the x - dimension between the substrate and the top structure in order to service the electronic component , as will now be discussed with reference to fig6 . [ 0044 ] fig6 is an elevational section of another system 610 according to an embodiment . the system 610 relates to a decoupling capacitor system . the system 610 includes a substrate 612 , and an electrical first bump 614 that is adhered to a substrate first pad 616 . in one embodiment , the substrate 612 is a motherboard for a digital computer , an electronic apparatus , or the like . in another embodiment , the substrate 612 is a main board for a specialized device such as a hand - held personal digital assistant ( pda ) or the like . in one embodiment , the substrate 612 is a board for a wireless device or the like . the electrical first bump 614 is typically a high melting - point solder that includes a top end 618 and a bottom end 620 . adhesion of the electrical first bump 614 to the substrate first pad 616 is by a low melting - point solder 622 . both the electrical first bump 614 and the solder may be a pb - containing solder or a substantially pb - free solder . a top structure 624 is disposed at the top end 618 of the electrical first bump 614 . in one embodiment , the top structure 624 includes an electronic component 626 such as a processor , an asic , or the like . in one embodiment , the top structure 624 includes a power socket 628 that carries an electronic component 626 . in one embodiment , the top structure 624 includes an interposer ( also represented generally as item 628 ) that may make connection with an electronic component and / or a power socket . in one embodiment , the top structure 624 includes a combination of at least two of an electronic component , a power socket , and an interposer . alternatively , the top structure 624 is a packaged electronic component without a power socket or the like , or without an interposer or the like , or without either . a first capacitor 630 a is disposed above the substrate 612 and is substantially contiguous to the electrical first bump 614 . the capacitor 630 a includes a power or vcc terminal 632 a and a ground or vss terminal 634 a . by “ substantially contiguous ” it is meant that the capacitor 630 a and the electrical first bump 614 are electrically touching at the power terminal 632 a . in another embodiment “ substantially contiguous ” means that there is no structure closer to the electrical first bump 614 than the power terminal 632 a of the capacitor 630 a . in another embodiment “ substantially contiguous ” means that the capacitor is placed proximate to the electrical first bump , within about one lateral diameter ( in the x - dimension ) of the electrical first bump . in one embodiment , the capacitor 630 a is one of a plurality of capacitors 630 a , 630 b , and 630 c that are arrayed beneath the electronic component 626 , and the array is substantially centered along a symmetry line 636 that bisects the electronic component 626 in the x - dimension . in this embodiment , where three capacitors 630 a , 630 b , and 630 c are arrayed beneath the electronic component 626 , the capacitor 630 b is bisected by the symmetry line 636 , and the capacitors 630 a and 630 c are spaced apart opposite each other from the symmetry line 636 . the capacitor 630 a is disposed between the electrical first bump 614 and an electrical second bump 638 that is substantially contiguous to the ground terminal 634 a . the electrical second bump 638 is adhered to a substrate second pad 640 . like the electrical first bump 614 , the electrical second bump 638 is typically a high melting - point solder that includes a top end 642 and a bottom end 644 . adhesion of the electrical second bump 638 to the substrate second pad 640 is by the low melting - point solder 622 . the electrical first bump 614 includes a first characteristic vertical dimension ( in the z - dimension ) that originates at or near the substrate first pad 616 and that terminates near the top structure 624 . the electrical second bump 638 includes a second characteristic vertical dimension that is substantially equal to the first characteristic vertical dimension of the electrical first bump 614 . the capacitors 630 a , 630 b , and 630 c include a third characteristic vertical dimension that originates at or near the substrate first pad 616 and that terminates below the top structure 624 . in one embodiment , the capacitors 630 a , 630 b , and 630 c are provided in parallel with relation to the electronic component 626 . further , in one embodiment , other capacitors are deployed either above or below the plane of the figure , or both . other electrical bumps 646 , 648 , 660 , and 662 are depicted in fig6 . the electrical bumps 660 and 662 represent electrical third and fourth bumps , respectively , in relation to the electrical first bump 614 and the electrical second bump 638 . in this embodiment , the electrical bumps 646 and 648 are data / control signal bumps for the electronic component 626 . a power plane ( not pictured ) and a ground plane ( not pictured ) are also within the substrate 612 , along with signal planes ( not pictured ) for the additional electrical bumps 646 and 648 . the illustration of fig6 depicts electrical first bump 614 , electrical second bump 638 , electrical third bump 660 , and electrical fourth bump 662 as having an oblong shape that gives each bump an aspect ratio ( height : width ) of greater than one . in one embodiment , the standoff 656 is increased by having electrical bumps with an aspect ratio of greater than one , although the aspect ratio may be substantially equal to one . where a high - performance capacitor is selected , it may have a third characteristic vertical dimension that is less than the first characteristic vertical dimension of the electrical first bump 614 . in the embodiment of fig6 all the decoupling capacitors are disposed upon the substrate 612 . where it is applicable to dispose all decoupling capacitors upon the top structure 624 , a system similar to that depicted in fig7 is used , as will now be discussed . [ 0055 ] fig7 is an elevational cut - away of yet another system 710 according to an embodiment . in fig7 a system 710 includes a substrate 712 and a top structure 724 . disposed on substrate 712 are an electrical first bump 714 , an electrical second bump 738 , an electrical third bump 760 , and an electrical fourth bump 762 . a capacitor 730 a is disposed upon the top structure 724 between the electrical first bump 714 and the electrical second bump 738 . a capacitor 730 b is disposed upon the top structure between the electrical second bump 738 and the electrical third bump 760 . similarly , a capacitor 730 c is disposed upon the top structure between the electrical third bump 760 and the electrical fourth bump 762 . the placement of the capacitors 730 a , 730 b , and 730 c closer to the electronic component 726 has the effect of a faster transient load response by the capacitors . although the embodiments in fig6 and 7 depict three capacitors in the x - dimension , other embodiments include an embodiment having two capacitors arrayed linearly in the x - dimension , and an embodiment having more than three capacitors arrayed linearly in the x - dimension . further embodiments have more capacitors deployed above and / or below the plane of the figure . according to another embodiment , a combination of capacitors is disposed in part upon a substrate and in part upon a top structure , as will now be described regarding fig8 . [ 0058 ] fig8 is an elevational cut - away of a still another system 810 according to an embodiment . the system 810 relates to a decoupling capacitor system . the system 810 includes a substrate 812 and a top structure 824 including an electronic component 826 . the system 810 illustrates a combination of capacitors 830 a , 830 b , 830 c , 830 d , and 830 e . the capacitors 830 a , 830 b , 830 c are disposed upon the substrate 812 , and the capacitors 830 d and 830 e are disposed upon the top structure 824 . in one embodiment , the capacitors 830 a , 830 b , 830 c have a first capacity and a first response time , and the capacitors 830 d and 830 e have a second capacity that is greater than the first capacity . in another embodiment , the capacitors 830 d and 830 e have a second response time that is slower than the first response time . the embodiment depicted in fig8 is employed in a situation wherein the disparate coefficients of thermal expansion ( cte ) for the capacitors 830 a , 830 b , and 830 c and the top structure 824 lead to cracking and disconnection issues for the capacitors 830 a , 830 b , and 830 c during testing and / or field use . where the source of heat is the electronic component 826 , in one embodiment , the distance from the electronic component 826 and the capacitors 830 d and 830 e is sufficient that the cte disparity is of minor consequence during testing and / or field use . although it has been discussed as an alternative embodiment for each figure set forth in this disclosure , it is again noted that the capacitors 830 a , 830 b , 830 c , 830 d , and 830 e , or one of them , or a subcombination of them can have a capacitor standoff like the capacitor standoff 231 depicted in fig2 a . accordingly , whether a given capacitor is mounted upon the substrate 812 or the underside of the top structure 824 , the capacitor can have a capacitor standoff such that the capacitor is not in direct contact with the either the substrate and / or the underside of the top structure 824 . the capacitor standoff allows for more thermal expansion differences because the capacitor is substantially suspended in the softer solder . an alternative embodiment is depicted in fig9 which will now be described . [ 0061 ] fig9 is an elevational cut - away of a further system 910 according to an embodiment . the system 910 relates to a decoupling capacitor system . the system 910 includes a substrate 912 and a top structure 924 including an electronic component 926 . the system 910 illustrates a combination of capacitors 930 a , 930 b , 930 c , 930 d , and 930 e . the capacitors 930 a , 930 b , and 930 c are disposed upon the top structure 924 , and the capacitors 930 d and 930 e are disposed upon the substrate 912 . in one embodiment , the capacitor 930 b has a first capacity and a first response time . the capacitors 930 a and 930 c have a second capacity and a second response time . the capacitors 930 d and 930 e have a third capacity that is greater than the first capacity and the second capacity . in another embodiment , the capacitors 930 d and 930 e have a third response time that is slower than the first response time . in another embodiment , the capacitors 930 a and 930 c have a response time that is slower than the capacitor 930 b , but faster than the capacitors 930 d and 930 e . accordingly , in one embodiment the capacitor 930 b has the fastest response time and the lowest capacity . the embodiment depicted in fig9 is employed in a situation wherein the disparate coefficients of thermal expansion ( cte ) for the capacitors 930 a , 930 b , and 930 c and the top structure 924 are not great enough to cause cracking and disconnection issues during testing and / or field use . further , it is a characteristic of this embodiment to place the capacitors 930 a , 930 b , and 930 c as close to the electronic component 926 as possible within the area between the substrate 912 and the top structure 924 . the placement of the capacitors 930 d and 930 e is depicted as on the substrate 912 , but an alternative embodiment includes their placement ( not pictured ) upon the top structure 924 . another embodiment relates to a method of forming a current loop in a decoupling capacitor system . according to various embodiments , the current loop is not convoluted . this will now be explained with reference to fig1 . [ 0063 ] fig1 is an elevational cut - away of yet a further system 810 according to an embodiment . the system 1010 has a simple current loop 1064 . the system 1010 includes a substrate 1012 and a top structure 1024 including an electronic component 1026 . according to an embodiment , a simple current loop 1064 originates out of the power plane ( not pictured ) of the substrate 1012 . the simple current loop 1064 passes upwardly from a capacitor vcc terminal 1032 and an electrical bump 1014 . next , the simple current loop 1064 passes into the power plane ( not pictured ) and / or a power via ( not pictured ) of the top structure 1024 and into the electronic component 1026 . thereafter , the simple current loop 1064 passes out of the electronic component 1026 and into the ground plane ( not pictured ) and / or a ground via ( not pictured ) of the top structure 1024 . finally , the simple current loop 1064 concludes in the capacitor vss terminal 1034 and ground electrical bump 1038 , and it terminates in the ground plane ( not pictured ) of the substrate 1012 . this simple current loop 1064 embodiment is therefore not convoluted , as compared to the loop 64 depicted in fig1 . in one embodiment , the current loop forms a simple deflected loop , but it does not form any convolution . fig8 is an example of a simple deflected current loop 864 . the simple deflected current loop 864 passes upwardly from a capacitor vcc terminal 832 and electrical bump 814 . next , the simple deflected current loop 864 passes into the power plane ( not pictured ) and / or a power via ( not pictured ) of the top structure 824 and into the electronic component 826 . thereafter , the simple deflected current loop 864 passes out of the electronic component 826 and into the ground plane ( not pictured ) and / or a ground via ( not pictured ) of the top structure 824 . finally , the simple deflected current loop 864 concludes in the capacitor vss terminal 834 and ground electrical bump 838 , and it terminates in the ground plane ( not pictured ) of the substrate 812 . this simple deflected current loop 864 embodiment is also not convoluted , in comparison to the convoluted loop 64 depicted in fig1 . it is again noted that the simple loop and the simple deflected loop are each shorter current loops than what exists in the conventional technology . [ 0066 ] fig9 illustrates another embodiment of a simple deflected current loop 964 . the simple deflected current loop 964 passes upwardly from a capacitor vcc terminal 932 and electrical bump 914 . next , the simple deflected current loop 964 passes into the power plane ( not pictured ) and / or a power via ( not pictured ) of the top structure 924 and into the electronic component 926 . thereafter , the simple deflected current loop 964 passes out of the electronic component 926 and into the ground plane ( not pictured ) and / or a ground via ( not pictured ) of the top structure 924 . finally , the simple deflected current loop 964 concludes in the shared capacitor vss terminal 934 and ground electrical bump 938 , and it terminates in the ground plane ( not pictured ) of the substrate 912 . this simple deflected current loop 964 embodiment is also , by definition , not convoluted . [ 0067 ] fig1 illustrates a method flow diagram 1200 according to an embodiment . in 1210 , a decoupling capacitor is provided between an electrical first bump and an electrical second bump . in 1220 , a component transient is responded to at the decoupling capacitor . in 1230 , a supply voltage vcc is directed upwardly from the capacitor toward the component . in 1240 , a ground voltage vss is retrieved downwardly from the component toward the capacitor . in one embodiment , the method causes a simple current loop to form as set forth herein . in another embodiment , the method causes a simple deflected current loop to form as set forth herein . it is emphasized that the abstract is provided to comply with 37 c . f . r . § 1 . 72 ( b ) requiring an abstract that will allow the reader to quickly ascertain the nature and gist of the technical disclosure . it is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims . in the foregoing detailed description of embodiments of the invention , various features are grouped together in a single embodiment for the purpose of streamlining the disclosure . this method of disclosure is not to be interpreted as reflecting an intention that the claimed embodiments of the invention require more features than are expressly recited in each claim . rather , as the following claims reflect , inventive subject matter lies in less than all features of a single disclosed embodiment . thus the following claims are hereby incorporated into the detailed description of embodiments of the invention , with each claim standing on its own as a separate preferred embodiment . it will be readily understood to those skilled in the art that various other changes in the details , material , and arrangements of the parts and method stages which have been described and illustrated in order to explain the nature of this invention may be made without departing from the principles and scope of the invention as expressed in the subjoined claims .