an invention for optical transmitter equipment is disclosed . numerous specific details are set forth in order to provide a thorough understanding of the present invention . it will be understood , however , to one skilled in the art , that the present invention may be practiced without some or all of these specific details . fig1 is a circuit diagram illustrating an embodiment of the present invention in which the invention is applied to a 1 . 3 μm optical transmitter equipment . in fig1 , the right - hand side shows a region of a semiconductor laser for optical excitation and the left - hand side shows a region of a semiconductor laser for optical transmission and an example of a drive circuit for the said semiconductor laser . an area 100 enclosed with a dotted line is usually constituted by an optical integrated circuit device which comprises a compound semiconductor for example . a concrete configuration thereof will be described later . other circuits such as , for example , a differential amplified circuit and each constant current circuit are constituted by conventional circuits of a silicon - based material . to a semiconductor laser 10 for optical excitation is connected through a resistor 12 a constant current circuit 11 for driving the semiconductor laser 10 . a device structure is designed so that laser beam emitted from the semiconductor laser 10 efficiently reaches an active layer of a semiconductor laser 1 for optical transmission . with this light , not a current , the semiconductor laser 1 for optical transmission is biased equivalently to the biased state up to point a in fig3 as referred to previously . if in this state the illustrated rectangular electric current is inputted to the semiconductor laser 1 from the drive circuit , there can be obtained an optical power of such a waveform as shown in fig3 . as to the drive circuit itself , a conventional one suffices , for example the one illustrated in fig2 . as to a constant current transistor 6 , it will be described later . transistors 2 and 3 constitute a differential amplified circuit . the semiconductor laser 1 is connected to the collector of the transistor 2 which is for the differential amplified circuit . on the other hand , a constant current transistor 4 is connected to the load of the transistor which is for the differential amplified circuit . the numeral 5 denotes a constant current transistor for the differential amplified circuit , numeral 6 denotes a constant current circuit for biasing the semiconductor laser 1 , and numeral 7 denotes a resistor . a description will now be given about the use of the constant current transistor 6 . also in the example shown in fig1 there is provided the constant current transistor 6 for biasing . this is for preventing the potential of a connection line between the semiconductor laser 1 and the output transistor 2 from becoming unstable even when an output current of the output transistor 2 in the differential amplified circuit 2 becomes 0 ma , i . e ., cut - off state . thus , the required current is in the range of 0 . 01 ma to 0 . 1 ma , which is a magnitude corresponding to 1 / 250 - 1 / 2500 of the conventional required current . consequently , a transistor of a small parasitic capacitance is employable as the transistor 6 . in this way it was possible to implement optical transmitter equipment with little deterioration in high - speed performance of the semiconductor laser caused by the bias circuit . in connection with the structure of the semiconductor laser it is important that light emitted from the semiconductor laser 10 for optical excitation be efficiently introduced into the semiconductor laser 1 for drive . for introducing the light throughout the entire active layer of the semiconductor laser for drive it is basically preferred that the light be introduced in a direction perpendicular to the light emitting direction of the semiconductor laser for drive , i . e ., from a side face or an upper surface . in this embodiment , two semiconductor lasers are integrated on the same substrate such as that shown in fig6 . as shown in the same figure , a semiconductor laser 13 for drive and a semiconductor laser 15 for optical excitation are arranged on a inp substrate 17 in such a manner that their emission region and active layer are opposed to each other . in this case , from the standpoint of optical coupling it is preferred that the spacing between both semiconductor lasers be narrow . usually the said spacing is designed in the range of 1 to 10 μm from the standpoint of coverage of a protective layer onto the semiconductor layer and the resolution in processing using a photoresist . the resonator length of the semiconductor laser 13 for drive which emits light at a wavelength of 1 . 30 μm is 100 μm and an active layer 14 of the semiconductor laser 13 is constituted by an ordinary multi - quantum well layer using ingaalas . the resonator length of the semiconductor laser 15 for optical excitation is 200 μm . for exciting the semiconductor laser 13 for drive it is preferred for an active layer 16 of the semiconductor laser for optical pumping to be formed such that the emission wavelength of the semiconductor laser for optical excitation is a little shorter than the emission wavelength of the semiconductor laser 13 for drive , that is , a little shorter than the wavelength composition of the active layer in the semiconductor laser 13 . here an active layer with an emission wavelength of 1 . 29 μm was allowed to grow by the same crystal growth in accordance with a selective growth method . an associated wavelength difference is preferably not greater than 300 mev in terms of an energy difference . this energy difference corresponds to not larger than 0 . 311 μm in a 1 . 3 μm laser and not larger than 0 . 423 μm in a 1 . 55 μm laser . emission end faces 19 and 18 of the semiconductor laser 15 for optical excitation and the semiconductor laser 13 for drive both provided on the inp substrate are each finished as a coated mirror of a high reflectance . the mirror faces 18 and 19 are fabricated by the conventional dry etching method . a threshold current in the semiconductor laser 13 for drive , which is integrated as in fig6 , was found to be 5 ma at 25 ° c ., 14 ma at 85 ° c ., while a threshold current in the semiconductor laser 15 for excitation was found to be 12 ma at 25 ° c ., 24 ma at 85 ° c . when 18 ma and 36 ma were introduced respectively at 25 ° c . and 85 ° c . into the semiconductor laser for excitation , the semiconductor laser 13 for drive oscillated . appropriate bias conditions were found to be 24 ma at 25 ° c . and 46 ma at 85 ° c . in the semiconductor laser for excitation . in a 1 . 3 μm optical transmitter equipment fabricated on the basis of the fig1 circuit using the thus - integrated lasers , a satisfactory eye opening could be obtained at electric currents of 38 ma at 25 ° c ., 48 ma at 85 ° c ., and at a speed of 20 gb / s . thus , in this example , a satisfactory operation could be attained at 0 °- 85 ° c . next , an example will now be described with reference to fig7 in which optical energy is introduced from an upper surface in the direction of light emission of the semiconductor laser for drive . the semiconductor laser 15 for optical pumping is disposed on the upper surface of the semiconductor laser 13 for drive . in the example of fig7 , the semiconductor lasers are fabricated discretely , i . e ., each individually . the underlying semiconductor laser 13 for drive is constructed as follows and can be fabricated in a conventional manner . a multi - quantum well layer 21 is formed on an n - type inp substrate 22 and this region is formed in a conventional mesa type stripe shape . on both sides of this stripe shape are formed so - called buried layers , which are a p - type current block layer 24 , an n - type current block layer 25 , and a p - type current block layer 26 . on the base thus prepared are formed a p - type inp layer 27 and an ingaas layer 28 as an ohmic contact layer . an upper portion of the active layer 21 is removed so that light can be incident on the ingaas layer 28 from above . on the back side of the n - type inp substrate 22 is formed an n - side ohmic electrode 23 , while on the ingaas layer 28 is formed a p - side ohmic electrode 29 . the inp substrate 17 and the active layer 16 in the semiconductor laser 15 for optical excitation are shown schematically and a detailed explanation thereof will here be omitted because a conventional current constriction structure suffices . a description will now be given of a second embodiment of the present invention in which the invention is applied to a 1 . 3 μm optical transmitter equipment . the circuit used in this second embodiment is the same as that used in the first embodiment . there were used integrated semiconductor lasers of such a structure as shown in fig8 . in the same figure , the numeral 13 denotes a semiconductor laser for drive , numeral 14 denotes an active layer of the semiconductor laser 13 , numeral 15 denotes a semiconductor laser for excitation , numeral 16 denotes an active layer of the semiconductor laser 15 , numeral 17 denotes an n - type lnp substrate , numeral 18 denotes a dry etched mirror , numerals 51 and 52 denote semiconductor current block layers formed by fe - doped inp , and numerals 53 and 54 denote end faces of the semiconductor laser for optical excitation which end faces are formed by cleavage . in the illustrate structure , the semiconductor laser for drive is held in a sandwiched fashion within the resonator of the semiconductor laser for excitation . fig8 is drawn with electrode and coating layer omitted for visualization . as the semiconductor laser for drive there was used a distributed feedback type semiconductor laser which oscillates at a single wavelength , not the fabry - perot type laser used in the first embodiment . a section taken on line a — a ′ in fig8 , i . e ., a section of the semiconductor laser for drive , is shown in fig9 . in fig9 , a diffraction grating formed of ingaasp and having λ / 4 shift is provided on the active layer 14 so that the semiconductor laser for excitation oscillates in a single mode . numeral 70 denotes a boundary of λ / 4 shift . a coating layer 61 formed on an end face 18 by dry etching has a low reflectance of 0 . 6 %. numerals 63 and 62 denote optical guide layers , numeral 65 denotes a clad layer , and numeral 66 denotes a contact layer formed of ingaas which contact layer is for ohmic contact with an upper electrode 67 . numeral 69 denotes a lower electrode and numeral 68 denotes a coating layer formed on a rear end face and having a reflectance of 90 %. emission wavelength was 1 . 305 μm . as to the device size , the resonator length was set short to 60 μm with a view to attaining high speed . the resonator length in the semiconductor laser for excitation was set at 400 μm . as the semiconductor laser for excitation there was fabricated a fabry - perot type semiconductor laser with 95 % coated mirror applied to both end faces because it was not necessary to make the oscillation mode to a single mode nor was it necessary to emit light to the exterior . a threshold current in the semiconductor laser 13 for drive used in this embodiment was 3 . 8 ma at 25 ° c ., 9 . 5 ma at 70 ° c ., while a threshold current in the semiconductor laser 15 for excitation was 4 ma at 25 ° c ., 8 ma at 70 ° c . when 8 . 9 ma and 21 ma were introduced respectively at 25 ° c . and 70 ° c . into the semiconductor laser for excitation , the semiconductor laser 13 for drive oscillated . appropriate bias conditions were found to be 14 ma at 25 ° c . and 30 ma at 70 ° c . in the semiconductor laser for excitation . current from a constant current transistor 11 for bias is 0 . 05 ma and is thus extremely small and a parasitic capacitance of the transistor 11 was found to be extremely small . in a 1 . 3 μm optical transmitter equipment fabricated on the basis of the fig1 circuit using the thus - integrated lasers , a satisfactory eye opening could be obtained at electric currents of 50 ma at 25 ° c ., 60 ma at 70 ° c ., and at a speed of 40 gb / s , reflecting the small parasitic capacitance . thus , in this example , a satisfactory operation of 40 gb / s could be attained at 0 °- 70 ° c . although in this embodiment there was used distributed feedback type semiconductor laser as the semiconductor laser for drive , it goes without saying that even if there is used a distributed bragg reflector or a vertical cavity surface emitting laser , there will be obtained the same effect as above . moreover , although fe - doped inp was used as the semiconductor block layer 52 , it goes without saying that even if there is used ru - doped inp , or pnp - stacked inp layer , or inalas / fe - inp - stacked semiconductor block layer , there will be obtained the same effect as above further , although in this embodiment there was used a semiconductor laser as a device for excitation , it is needless to say that even if there is used a light emitting diode , it is possible to effect excitation . the present invention is effective in decreasing a parasitic capacitance between a semiconductor laser drive circuit and a semiconductor laser in optical transmitter equipment wherein the semiconductor laser is driven by a direct modulation method .