fig4 a to 4 e are cross - sectional views illustrating a fabricating process of a semiconductor device having a triple well structure in accordance with the present invention . referring to fig4 a , after a field oxide layer 32 for isolation between devices is formed on a semiconductor substrate 31 through a shallow trench isolation ( sti ) process , a photosensitive layer is coated on the semiconductor substrate 32 and then a first mask 33 is formed by a patterning process with exposing and developing processes . the first mask 33 is formed with a photosensitive layer suitable for a high energy ion implantation at a density of about 1 g / cm 3 to about 10 g / cm 3 and at a thickness of over 2 . 5 μm . subsequently , 31 p ions of an n - type dopant are implanted in a predetermined portion of the semiconductor substrate 31 , which is exposed by the first mask 33 , with an ion implanter , so that a deep n - well ion implantation region 34 is formed . at this time , considering a junction leakage current , the ion implantation process is carried out with an ion implantation energy of about 0 . 6 mev to about 1 . 6 mev and with 31 p ion dose of about 5 × 10 12 ions / cm 2 to about 1 . 5 × 10 13 ions / cm 2 less than that a target dose . the reason using the dose less than that of the target dose is to reduce a junction leakage current , and the dose less than the target dose , is the minimum dose necessary for forming the n - well ion implantation region 34 isolating adjacent p - wells . accordingly , dose reduction at the deep n - well ion implantation region 34 has an effect that dopant concentration of adjacent p - wells on which cell transistors will be formed , is increased . referring to fig4 b , after a photosensitive layer is coated on the semiconductor substrate 31 , a second mask 35 is formed by a patterning process with exposing and developing processes . n - type dopant is implanted by using the first and second masks 33 and 35 as an ion implantation mask with a high energy ion implanter , so that a middle ion implantation region 36 and a p channel field stop ion implantation region 37 are formed . 31 p ions are used at the middle n - well ion implantation process . it is preferable that dose of the 31 p ions is of about 5 × 10 12 ions / cm 2 to about 2 × 10 13 ions / cm 2 and an ion implantation energy is of about 500 kev to about 600 kev . also , 31 p ions are used at the p channel field stop ion implantation process . it is preferable that dose of the 31 p ions is of about 5 × 10 11 ions / cm 2 to about 2 × 10 13 ions / cm 2 and an ion implantation energy is of about 150 kev to about 300 kev . the n - well ion implantation region 34 , the middle n - well ion implantation region 36 and the p channel field stop ion implantation region 37 form a profiled n - well through the above implantation process . the numeral reference ‘ 38 ’ denoted in fig4 b represents a doping profile of the profiled n - well . referring to fig4 c , after the second mask 35 is stripped , a third mask 39 is formed by a patterning process with exposing and developing processes after coating a photosensitive layer . a p - type dopant is implanted by using the third mask 39 as an ion implantation mask with a high energy ion implanter , so that a p - well ion implantation region 40 and an n - channel field stop ion implantation region 41 are formed . at this time , it preferable that the p - well implantation is carried out with boron ( b ) of a concentration of about 5 × 10 12 ions / cm 2 to about 3 × 10 13 ions / cm 2 and in an ion implantation energy of about 180 kev to about 300 kev . the n - channel field stop ion implantation process is carried out with boron ( b ) ions of a concentration of about 5 × 10 11 ions / cm 2 to about 1 × 10 13 ions / cm 2 and in an ion implantation energy of about 50 kev to about 80 kev . the p - well ion implantation region 40 and the n - channel field stop ion implantation region 41 form a profiled p - well . the numeral reference ‘ 42 ’ denoted in fig4 c represents a doping profile of the profiled p - well . since the dose in the p - well ion implantation is reduced less than that in the n - well ion implantation , the dose of p - type dopant can be increased . subsequently , referring to fig4 c , after the third mask 39 is stripped , the profiled n - well and the dopant implanted in the p - well are activated through a furnace annealing process so that a triple well formation process is completed . the triple well includes a first p - well 43 , a deep n - well 44 adjacent to the first p - well 43 and a second p - well 45 surrounded by the deep n - well 44 and positioned at a predetermined distance with the first p - well 43 . a transistor to be formed on the second p - well 45 , is independent of a transistor to be formed on the first p - well 43 . the second p - well 45 has an advantage that can be protected from an external voltage or noise suddenly applied , because the second p - well 45 is surrounded by the deep n - well 24 . for this reason , a cell transistor is to be formed on the second p - well 45 . referring to fig4 d , a photosensitive layer is coated on the semiconductor substrate 31 and a fourth mask 46 is formed through a patterning process with exposing and developing processes . the fourth mask 46 exposes a portion of the semiconductor substrate 31 , i . e . the second p - well 45 , on which a cell transistor is to be formed . after forming the fourth mask 46 , p - type impurities are implanted into the overall second p - well 45 to adjust a threshold voltage of the cell transistor by using the fourth mask 46 as an ion implantation mask , so that a threshold voltage ion implantation region 47 is formed . boron ( b ) or boron diflouride ( bf 2 ) is implanted as the p - type impurities to adjust the threshold voltage of the cell transistor . at this time , boron ( b ) or boron diflouride ( bf 2 ) is implanted with dose of about 5 × 10 12 ions / cm 2 to about 1 . 5 × 10 13 ions / cm 2 . in case that the boron ( b ) is implanted , it is preferable that an ion implantation energy is about 15 kev to about 40 kev and , in case that the boron diflouride ( bf 2 ) is implanted , it is preferable that an ion implantation energy is about 30 kev to about 40 kev . when the boron difluoride is implanted with an ion implantation energy of 30 kev , it has an identical doping profile to which the boron is implanted with an ion implantation energy of 6 . 7 kev . referring to fig4 e , after removing the fourth mask 46 , a gate oxide layer 48 and a gate electrode 49 a are formed on a predetermined region of the semiconductor substrate 31 , and a spacer 49 b is formed on sidewalls of the gate electrode 49 a . thereafter , impurities of n and p types are implanted with a blanket ion implantation without a mask process , so that an n + source / drain region 50 a of an nmosfet and a p + pocket ion implantation region 50 b , on a region for a pmosfet , are formed in the cell transistor and a peripheral circuit , respectively . at this time , a dose of about 1 × 10 13 ions / cm 2 to about 5 × 10 13 ions / cm 2 is used to form the n + source / drain region 50 a . as mentioned the above , the threshold voltage of the cell transistor can be increased by controlling a concentration of the semiconductor substrate , that is , the dose of the p - well i in accordance with the present invention , in stead of controlling conditions of a threshold voltage ion implantation and a source / drain ion implantation for the cell transistor . the triple well has a shallow well profile , that is , the well profile is near to a channel region . fig5 is a graph showing leakage current characteristic at a p + junction / n - well according to a deepp - well ion implantation process conditions , such as the dose , an ion implantation energy and so on . referring to fig5 when the ion implantation energy is reduced from about 1 . 2 mev to about 1 . 0 mev , junction leakage characteristics are mostly similar each other . however , when the dose is reduced , a constant leakage current characteristic can be secured . as the dose of the deep n - well is reduced , an annealing process for removing defects caused from a deep n - well ion implantation can be omitted . fig6 is a graph showing a threshold voltage roll - off characteristic of the second p - well according to p - well ion implantation process conditions , such as dose , ion implantation energy and so on . as the ion implantation energy is reduced , a boron concentration of a surface channel is increased so that the threshold voltage is increased . as shown in fig6 even though the dose of the ion implantation for adjusting the threshold voltage is not increased , the desired threshold voltage can be obtained . also , the counter doping effect with the cell junction is reduced and a resistance and an electric field are reduced , so that the refresh time is increased . namely , a reliability of the device is improved . accordingly , increase of the threshold voltage of the cell transistor and of the refresh time is expected . the process can be simplified in accordance with the present invention , since the well annealing process for removing defects can be omitted . while the present invention has been described with respect to the particular embodiments , it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims .