fig3 shows a first preferred embodiment of a nonvolatile memory cell structure according to one or more aspects of the present invention . in the preferred embodiment of fig3 a nonvolatile memory cell 300 comprises an n - well 302 and a p - well 304 formed in a top surface of a semiconductor substrate 305 and separated by a field oxide 308 . a first impurity region 325 and a second impurity region 335 , each doped with a p - type impurity , are formed in a top surface of the n - well 302 . a v cc supply line 330 is formed and connected to the first impurity region 325 . a gate electrode for a floating gate 310 is formed on an oxide film 317 above and between the impurity regions , producing a pmos transistor 320 . the p - well 304 also has formed in a top surface a first impurity region 355 and a second impurity region 365 , each doped with an n - type impurity . a gate electrode 345 is formed on an oxide layer 344 above and between the impurity regions 355 and 365 , producing a nmos transistor 350 . the gate electrode 345 is connected with a control line 360 of the nonvolatile memory cell 300 . a metalization layer 346 is formed above the field oxide region 308 . the metalization layer 346 connects the second impurity region 335 of the pmos transistor 320 with the second impurity region 365 of the nmos transistor 350 . in a preferred embodiment , a dielectric layer 347 is formed between the metalization layer 346 and the field oxide region 308 . also , the first impurity region 355 of the nmos transistor 350 is connected with a bit line 370 . fig4 is a circuit diagram for a first preferred embodiment of a nonvolatile memory cell 400 according to one or more aspects of the present invention . in the memory cell 400 , a first mos transistor 450 has a gate connected to a control gate 460 of the nonvolatile memory cell , a source connected to a bit - line 470 and a drain connected to a drain of a second mos transistor 420 . the second mos transistor 420 has a source connected with a supply v cc 420 and a gate which is the floating gate 410 of the non - volatile memory cell 400 . in a preferred embodiment , the first mos transistor 450 is an nmos transistor and the second mos transistor 420 is a pmos transistor . operation of the nonvolatile memory cell 300 will now be described . when it is desired to program the memory cell 300 , electrons are injected onto the floating gate 310 of the pmos transistor 320 . to accomplish this , for example , a negative voltage ( e . g ., − 3 to − 18 volts ) may be applied on the v cc supply line 330 while the n - well 302 is held at ground potential . electrons induced by the breakdown of the pn junction at the source of the pmos transistor 320 are injected thereby onto the floating gate 310 . to read the data stored in the memory cell 300 , it is determined whether or not a current will pass through the pmos transistor 320 with the gate floating . to accomplish this , for example , a positive voltage ( e . g ., + 1 to + 10 volts ) may be applied on the v cc supply line 330 which in turn applies the same potential to the n - well 302 . alternatively , the n - well 302 maye be held at a higher potential . the control gate 360 is supplied with a voltage to turn on the nmos transistor 350 and the current through the transistor is sensed via the bit line 370 . if a current is conducted , then the memory cell 300 is considered to store a first data value ( e . g . “ 1 ”) and if no current conducts , then the memory cell 300 is considered to store a second data value ( e . g ., “ 0 ”). to erase the memory cell 300 , electrons are emitted from the floating gate 310 of the pmos transistor 320 through the gate oxide 317 into the source or drain of the pmos transistor 320 or into the substrate 305 . to accomplish this , for example , a large positive voltage ( e . g ., + 15 to + 18 volts ) may be applied on the v cc supply line 330 and / or the n - well 302 . this will cause fowler - nordheim emission of electrons from the floating gate 310 . alternatively , the nonvolatile memory cell 300 may be erased by exposure to intense ultraviolet ( uv ) light in which case the memory cell 300 is a uvprom . thus , a nonvolatile memory cell is formed from a cmos structure comprising a pmos and nmos transistor appropriately fabricated and connected together . in a preferred embodiment , the nonvolatile memory cell may be formed in a gate array device comprising a plurality of pmos and nmos transistors formed in n - wells and p - wells in a top surface of a semiconductor substrate . fig5 shows a first preferred embodiment of a nonvolatile memory cell structure according to one or more aspects of the present invention . in the preferred embodiment of fig5 a nonvolatile memory cell 500 comprises an n - well 502 and a p - well 504 formed in a top surface of a semiconductor substrate 505 and separated by a field oxide 508 . a first impurity region 525 and a second impurity region 535 , each doped with a p - type impurity , are formed in a top surface of the n - well 502 . a gate electrode 515 is formed on an oxide film 517 above and between the impurity regions , producing a pmos transistor 520 . a bit line 570 is formed and connected to the first impurity region 525 . the gate electrode 515 is connected with a control line 560 of the nonvolatile memory cell 500 . the p - well 504 also has formed in a top surface a first impurity region 555 and a second impurity region 565 , each doped with an n - type impurity . a gate electrode forming a floating gate 510 of the memory cell 500 is formed on an oxide layer 544 above and between the impurity regions 555 and 565 , producing a nmos transistor 550 . a metalization layer 546 is formed above the field oxide region 508 . the metalization layer 546 connects the second impurity region 535 of the pmos transistor 520 with the second impurity region 565 of the nmos transistor 550 . in a preferred embodiment , a dielectric layer 547 is formed between the metalization layer 546 and the field oxide region 508 . also , the first impurity region 555 of the nmos transistor 550 is connected with a v cc supply line 530 . fig6 is a circuit diagram for a first preferred embodiment of a nonvolatile memory cell 600 according to one or more aspects of the present invention . in the memory cell 600 , a first mos transistor 650 has a gate connected to a floating gate 610 of the nonvolatile memory cell , a source connected to a supply v cc 620 and a drain connected to a drain of a second mos transistor 620 . the second mos transistor 620 has a source connected with a bit - line 670 and a gate which is the control gate 660 of the non - volatile memory cell 600 . in a preferred embodiment , the first mos transistor 650 is an nmos transistor and the second mos transistor 620 is a pmos transistor . operation of the nonvolatile memory cell 500 will now be described . when it is desired to program the memory cell 500 , electrons are injected onto the floating gate 510 of the nmos transistor 550 . to accomplish this , for example , a positive voltage ( e . g ., + 3 to + 18 volts ) may be applied on the v cc supply line 530 while the p - well 504 is held at ground potential . electrons induced by the breakdown of the pn junction at the source of the nmos transistor 550 are injected thereby onto the floating gate 510 . to read the data stored in the memory cell 500 , it is determined whether or not a current will pass through the pmos transistor 520 with the gate floating . to accomplish this , for example , a negative voltage ( e . g ., − 1 to − 10 volts ) may be applied on the v cc supply line 530 while the p - well 504 is held at ground potential . the control gate 560 is supplied with a voltage to turn on the pmos transistor 520 and the current through the transistor is sensed via the bit line 570 . if a current is conducted , then the memory cell 500 is considered to store a first data value ( e . g . “ 1 ”) and if no current conducts , then the memory cell 500 is considered to store a second data value ( e . g ., “ 0 ”). to erase the memory cell 500 , electrons are emitted from the floating gate 510 of the nmos transistor 550 through the gate oxide 544 into the source or drain of the nmos transistor 550 or into the substrate 505 . to accomplish this , for example , a large positive voltage ( e . g ., + 15 to + 18 volts ) may be applied on the v cc supply line 530 , and / or the p - well 504 . this will cause fowler - nordheim emission of electrons from the floating gate 510 . alternatively , the nonvolatile memory cell 500 may be erased by exposure to intense ultraviolet ( uv ) light in which case the memory cell 500 is a uvprom . while preferred embodiments are disclosed herein , many variations are possible which remain within the concept and scope of the invention . for example , although the embodiments shown in fig3 and 5 have a p - type substrate , the devices could be produced in an n - type semiconductor substrate . also , although the above - described embodiments use one nmos transistor and one pmos transistor , both of the transistors could be nmos transistors or pmos transistors . such variations would become clear to one of ordinary skill in the art after inspection of the specification , drawings and claims herein . the invention therefore is not to be restricted except within the spirit and scope of the appended claims .