the four transistor sfd unit cell disclosed in u . s . pat . no . 4 , 445 , 117 is illustrated in the simplified schematic diagram of fig1 . the disclosure of u . s . pat . no . 4 , 445 , 117 is incorporated herein by reference in its entirety . in fig1 each detector 10 is connected to a transistorized output circuit 12 formed on a common substrate therewith . the output circuit 12 includes a source follower metal oxide semiconductor transistor ( mosfet ) 14 , an enable mosfet 16 and a dual gate reset mosfet 18 , comprised of transistors 18a and 18b . the drain of the enable transistor 16 is connected to a drain bias signal vdd and the source of the enable transistor 16 is connected to the drain of the source follower 14 . the source of the source follower transistor 14 is connected to a column output line and to a column multiplexer ( not shown in fig1 ). the gate of the source follower transistor 14 is connected to the output of the photodetector 10 and is also connected through the reset transistors 18a and 18b to a reset bias signal vrst . the gate of reset transistor 18b is connected to a reset clock signal ( φrst ) while the gate of reset transistor 18a is connected to a row n select or enable signal . in operation the gate of the source follower transistor 14 accumulates on a capacitance 20 the charge that is sourced by the detector 10 in response to an incident photon flux . the charge that accumulates determines the source voltage of the source follower transistor 14 . the capacitance 20 may be a specifically formed capacitor or may represent the associated node capacitance . the gate of the source follower transistor 14 comprises a floating output node that is periodically reset by the action of reset transistors 18a and 18b . that is , the floating node is periodically reset in synchronism with the application of both the φrst and row select n signals . each of the row select n signals of the array is connected to receive a different row enable clock signal so that the array is row addressable , each of the column output lines carrying an output voltage representing the output signal of the corresponding detectors in the selected row . considering now the improved sfd circuit depicted in fig2 wherein corresponding devices are numbered the same as in fig1 it can readily be seen that the output circuit 12 &# 39 ; employs a single transistor 22 to perform the reset function . the gate of transistor 22 , which controls the transistor on / off state , is connected to a row enable line of a next row to be addressed and not the currently addressed row . thus , when a particular row ( n ) is addressed to be read out , the previously addressed row ( n + 1 ) is reset . an entire row of unit cells is thus simultaneously reset . as such the use of the invention is applicable for those applications allowing row - by - row reset , as opposed to pixel - by - pixel reset . the simplification in circuitry is readily apparent when comparing the presently preferred circuit of fig2 to the conventional circuit of fig1 . to perform the reset operation with the conventional circuit requires an additional transistor and an additional control input ( φrst ) which must be routed into every unit cell of the array . fig3 is a simplified block diagram illustrating a first embodiment of a sfd readout array 30 that incorporates a two dimensional array having y - rows and x - columns of three transistor sfd unit cells 12 &# 39 ;. it should be realized that a typical array could comprise fewer than nine and will typically comprise a larger number of unit cells than the nine depicted in fig3 . by example , the array may comprise 1024 unit cells arranged as 32 rows by 32 columns . furthermore , there is no requirement that the number of rows equal the number of columns . each of the unit cells 12 &# 39 ; is coupled to an associated radiation detector ( not shown ) for receiving and buffering charge sourced by the associated detector . array 30 readout circuitry includes a y - address generator 32 , an x - address generator 34 and a column multiplexer 36 coupled to a plurality of column output bus lines 38 , individual ones of which are coupled in common to all of the sfd unit cells 12 &# 39 ; of a particular one of the x - columns . an output stage 40 buffers the output of multiplexer 36 to provide a focal plane array ( fpa ) output to signal processing circuitry ( not shown ). as can be seen , a row enable signal for a particular row ( n ) is also coupled to a reset input of a row that is read immediately before the row ( n ), in this case the row ( n + 2 ). similarly , a row enable signal for the row ( n + 1 ) is also coupled to a reset input of the row that is read immediately before the row ( n + 1 ), in this case the row ( n ). fig4 is a simplified timing diagram showing the sequential application of the row enable signals to the unit cell array 30 . by example , it can be seen that an application of the row enable signal for the sfd row ( n + 1 ) simultaneously reset the unit cells of the sfd row read out previously , specifically the sfd row ( n ). fig5 is a block diagram that illustrates a presently preferred unit cell array layout and signal routing . this embodiment provides a nonfunctional , dummy row 42 and corresponding row enable signal for resetting the topmost functional row of the array 30 &# 39 ;. this scheme eliminates a requirement that the enable signal for the bottom row be wrapped around to reset the top row as in fig3 . this embodiment also routes the enable signal from each unit cell to the adjacent unit cell in the preceding row , thereby eliminating the extra signal line bused to each row of the array as illustrated in fig3 . fig6 illustrates a further embodiment of the invention wherein an array 50 of three transistor unit cells 12 &# 39 ; is readout in an interlaced fashion by first sequentially reading out all even rows and then sequentially reading out all odd rows . for example , even rows ( n ), ( n + 2 ), ( n + 4 ), ( etc .) are first sequentially readout . next , the odd rows ( n + 1 ), ( n + 3 ), ( n + 5 ), ( etc .) are readout . this embodiment illustrates that the invention does not require that a given enable line be coupled only to a physically adjacent row of unit cells for resetting the physically adjacent row . instead , the invention provides that a given enable line be coupled to a row that is readout prior to the given row , and not necessarily to a physically adjacent row . if a three - way or a four - way interleave of rows were desired instead of the two - way interleave depicted in fig6 then corresponding changes are made to the connection of the respective enable lines . of course , it may be desirable for the embodiment of fig6 to couple the enable signals interiorly within the array 50 , as depicted in fig5 instead of providing the separate reset signal busses as shown in fig6 . there are several advantages associated with the teaching of the invention . as a first example , the reduction in the number of transistors per unit cell provides additional area within the unit cell . this additional area can be exploited in a number of ways , depending upon the specific application . for example , transistor size can be varied , circuitry can be added to modify detector input circuit performance , the node capacitance 20 can be made larger for those applications benefiting from a larger capacitance value and / or an optimally reproducible circuit layout can be provided . another advantage conferred by the practice of the invention is the elimination of the φrst signal required to operate the conventional sfd circuit . in addition to simplifying the timing signal generation requirements and operation of the readout circuitry the elimination of the discrete reset signal further improves the layout of the unit cell , it being remembered that in the conventional array this signal was required to be routed to every unit cell of the array . specifically , the teaching of the invention optimizes the layout of a high - density schottky readout array by eliminating a requirement for mirror - image pairs of unit cells , thereby also eliminating odd / even signal nonuniformity problems . with the exception of the aspects of circuit operation relating to the novel reset technique other aspects of the operation of the circuit of fig2 are identical to the conventional four transistor sfd circuit as disclosed in u . s . pat . no . 4 , 445 , 117 , previously incorporated herein by reference . it should be noted that it is within the scope of the invention to provide the sfd unit cells in a monolithic fashion with the radiation detectors , that is integrated upon a common substrate therewith , or to provide the sfd unit cells separately . if provided separately an array of sfd unit cells may be hybridized with an array of radiation detectors by well - known coupling techniques , such as by coupling the sfd unit cell array to the photodetector array through a plurality of indium bumps . as such , and while the invention has been particularly shown and described with respect to preferred embodiments thereof , it will be understood by those skilled in the art that changes in form and details may be made therein without departing from the scope and spirit of the invention .