what probed into the invention is the organic optoelectronic material and organic el device , opv device or otft device using the organic optoelectronic material . detailed descriptions of the production , structure and elements will be provided in the following to make the invention thoroughly understood . obviously , the application of the invention is not confined to specific details familiar to those who are skilled in the art . on the other hand , the common elements and procedures that are known to everyone are not described in details to avoid unnecessary limits of the invention . some preferred embodiments of the present invention will now be described in greater detail in the following . however , it should be recognized that the present invention can be practiced in a wide range of other embodiments besides those explicitly described , that is , this invention can also be applied extensively to other embodiments , and the scope of the present invention is expressly not limited except as specified in the accompanying claims . in a first embodiment of the present invention , the organic optoelectronic material which can be used for organic el device , opv device or otft device are disclosed . the mentioned organic optoelectronic material are represented by the following formula ( 1 ): wherein x independently represents a divalent bridge selected from the atom or group consisting from o , s , c ( r 4 )( r 5 ) and nr 6 , r 4 to r 6 are substituents ; m , n and p represent an integer of 0 to 10 , r 1 to r 3 are independently selected from the group consisting of a hydrogen atom , a halide , a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms , a substituted or unsubstituted aryl group having 6 to 50 carbon atoms , a substituted or unsubstituted aralkyl group having 6 to 50 carbon atoms and a substituted or unsubstituted heteroaryl group having 3 to 50 carbon atoms . the organic optoelectronic material according to above - mentioned formula ( 1 ), the material preferably use for organic el device is represented by the following formula ( 2 ): wherein r 1 to r 3 are independently selected from the group consisting of a hydrogen atom , a halide , a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms , a substituted or unsubstituted aryl group having 6 to 50 ring carbon atoms , a substituted or unsubstituted aralkyl group having 6 to 50 carbon atoms and a substituted or unsubstituted heteroaryl group having 3 to 50 carbon atoms . the organic optoelectronic material according to above - mentioned formula ( 1 ), the material preferably use for opv device is represented by the following formula ( 3 ): wherein r 1 to r 3 and r 6 are independently selected from the group consisting of a hydrogen atom , a halide , a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms , a substituted or unsubstituted aryl group having 6 to 50 ring carbon atoms , a substituted or unsubstituted aralkyl group having 6 to 50 carbon atoms and a substituted or unsubstituted heteroaryl group having 3 to 50 carbon atoms . the organic optoelectronic material according to above - mentioned formula ( 1 ), the material preferably use for otft device is represented by the following formula ( 4 ): wherein r 1 to r 3 are independently selected from the group consisting of a hydrogen atom , a halide , a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms , a substituted or unsubstituted aryl group having 6 to 50 ring carbon atoms , a substituted or unsubstituted aralkyl group having 6 to 50 carbon atoms and a substituted or unsubstituted heteroaryl group having 3 to 50 carbon atoms . specific example of the organic optoelectronic material are represented by the general formula ( 2 ) to ( 4 ) include the following compounds : detailed preparation the organic optoelectronic material for the in the present invention could be clarified by exemplary embodiments , but the present invention is not limited to exemplary embodiments . example 1 ˜ 3 show the preparation for organic optoelectronic material in the present invention . example 4 ˜ 6 show the fabrication of organic el device , opv device and otft device and the characteristics . 150 ml of acetic acid anhydrous was dropwised slowly to a mixture of 28 . 7 g ( 21 . 7 mmol ) of 1 - indanone and 78 ml conc . hcl at ice - bath , then reflux overnight . after finishing the reaction , the mixture was allowed to cool to room temperature . the reaction was filtered to get the crude , the washed by water , acetone , dichloromethane to get compound as white solid ( 22 . 2 g , 15 . 6 mmol , 72 %). 1 h nmr ( cdcl 3 , 400 mhz ): chemical shift ( ppm ) 7 . 96 ( d , 3h ), 7 . 70 ( d , 3h ), 7 . 51 ( t , 3h ), 7 . 41 ( t , 3h ), 4 . 28 ( s , 6h ). 3 . 92 g ( 24 . 5 mmol ) of bromine was dropwised slowly to a mixture of 3 g ( 7 . 0 mmol ) of 5 , 5 , 10 , 10 , 15 , 15 - hexamethyl - 10 , 15 - dihydro - 5h - diindeno [ 1 , 2 - a : 1 ′, 2 ′- c ] fluorene and 150 ml dichloromethane at ice - bath , then stir at room temperature for 12 h . after finishing the reaction , the mixture was extracted with dichloromethane and water , the organic layer was washed with sodium sulfite aqueous solution , dried with anhydrous magnesium sulfate , the solvent was removed and the residue was recrystallized with thf to get the crude ( 3 . 0 g , 4 . 6 mmol , 66 %). 1 h nmr ( cdcl 3 , 400 mhz ): chemical shift ( ppm ) 8 . 10 ( d , 3h ), 7 . 64 ( d , 3h ), 7 . 52 ( dd , 3h ), 1 . 81 ( s , 18h ). a mixture of 2 g ( 3 . 0 mmol ) of 3 , 8 , 13 - tribromo - 5 , 5 , 10 , 10 , 15 , 15 - hexamethyl - 10 , 15 - dihydro - 5h - diindeno [ 1 , 2 - a : 1 ′, 2 ′- c ] fluorene , 2 . 67 g ( 13 . 5 mmol ) of biphenyl - 2 - ylboronic acid , 0 . 03 g ( 0 . 03 mmol ) of pd ( pph 3 ) 4 , 7 . 5 ml of 2m na 2 co 3 ( aq ) , 13 ml of etoh and 40 ml toluene was degassed and placed under nitrogen , and then heated at 100 ° c . for 12 h . after finishing the reaction , the mixture was allowed to cool to room temperature . the organic layer was extracted with dichloromethane and water , dried with anhydrous magnesium sulfate , the solvent was removed and the residue was purified by column chromatography on silica to give product ( 2 . 21 g , 2 . 06 mmol , 55 %) as a white solid . 1 h nmr ( cdcl 3 , 400 mhz ): chemical shift ( ppm ) 8 . 15 ( d , 3h ), 7 . 85 ˜ 7 . 65 ( m , 15h ), 7 . 52 ˜ 7 . 24 ( m , 15h ), 1 . 81 ( s , 18h ). ms ( m / z , fd + ): 882 . 7 in a 100 ml three - necked flask that had been degassed and filled with nitrogen , 1 g ( 1 . 13 mmol ) of 3 , 8 , 13 - tri ( biphenyl - 2 - yl )- 5 , 5 , 10 , 10 , 15 , 15 - hexamethyl - 10 , 15 - dihydro - 5h - diindeno [ 1 , 2 - a : 1 ′, 2 ′- c ] fluorene was dissolved in anhydrous dichloromethane ( 22 . 5 ml ), 1 . 83 g ( 11 . 3 mmol ) of iron ( iii ) chloride and 2 . 23 ml of nitromethane were dropwised into the reactor at ice bath , and the mixture was stirred until the starting material disappeared . the reaction was quenched with 30 ml methanol and filtered to get the crude . the crude was purified by column chromatography on silica , then recrystallized twice with dichloromethane / hexane to afforded ex2 as a white solid ( 0 . 34 g , 0 . 39 mmol , 35 %). 1 h nmr ( cdcl 3 , 400 mhz ): chemical shift ( ppm ) 9 . 11 ( s , 3h ), 8 . 86 ˜ 8 . 91 ( m , 6h ), 8 . 83 ( s , 3h ), 8 . 80 ( d , 3h ), 8 . 66 ( d , 3h ), 7 . 85 ˜ 7 . 45 ( m , 12h ), 1 . 81 ( s , 18h ). ms ( m / z , fd + ): 877 . 1 2 . 86 g ( 16 . 09 mmol ) of n - bromosuccinimide was added to a mixture of 3 g ( 4 . 87 mmol ) of 5 , 10 , 15 - tribenzyl - 10 , 15 - dihydro - 5h - diindolo [ 3 , 2 - a : 3 ′, 2 ′- c ] carbazole ( j . mater . chem . a , 2013 , 1 , 4077 ) and 300 ml dmf at dark , and then slowly heated until 60 ° c ., then keep for 12 h . after finishing the reaction , the mixture was allowed to cool to room temperature and poured into ice - water , then filtered to get the crude ( 3 . 2 g , 3 . 79 mmol , 78 %) as a pale brown solid , used in next step without purification . 1 h nmr ( cdcl 3 , 400 mhz ): chemical shift ( ppm ) 8 . 02 ( m , 3h ), 7 . 76 ( s , 3h ), 7 . 47 ˜ 7 . 11 ( m , 15h ), 6 . 01 ( s , 6h ). a mixture of 3 . 2 g ( 3 . 75 mmol ) of 5 , 10 , 15 - tribenzyl - 3 , 8 , 13 - tribromo - 10 , 15 - dihydro - 5h - diindolo [ 3 , 2 - a : 3 ′, 2 ′- c ] carbazole , 3 . 34 g ( 16 . 90 mmol ) of biphenyl - 2 - ylboronic acid , 0 . 04 g ( 0 . 01 mmol ) of pd ( pph 3 ) 4 , 9 . 3 ml of 2m na 2 co 3 ( aq ) , 15 ml of etoh and 45 ml toluene was degassed and placed under nitrogen , and then heated at 100 ° c . for 12 h . after finishing the reaction , the mixture was allowed to cool to room temperature . the organic layer was extracted with dichloromethane and water , dried with anhydrous magnesium sulfate , the solvent was removed and the residue was purified by column chromatography on silica to get product ( 2 . 21 g , 2 . 06 mmol , 55 %) as a white solid . ms ( m / z , maldi - tof ): 1071 . 2 in a 100 ml three - necked flask that had been degassed and filled with nitrogen , 1 g ( 0 . 93 mmol ) of 5 , 10 , 15 - tribenzyl - 3 , 8 , 13 - tri ( biphenyl - 2 - yl )- 10 , 15 - dihydro - 5h - diindolo [ 3 , 2 - a : 3 ′, 2 ′- c ] carbazole was dissolved in anhydrous dichloromethane ( 18 . 6 ml ), 1 . 50 g ( 9 . 3 mmol ) of iron ( iii ) chloride and 1 . 84 ml of nitromethane were dropwised into the reactor at ice bath , and the mixture was stirred until the starting material disappeared . the reaction was quenched with 30 ml methanol and filtered to get the crude . the crude was purified by column chromatography on silica , then recrystallized twice with dichloromethane / hexane to afforded ex14 as a off - white solid ( 0 . 21 g , 0 . 20 mmol , 22 %). 1 h nmr ( cdcl 3 , 400 mhz ): chemical shift ( ppm ) 9 . 08 ( s , 3h ), 8 . 53 ˜ 8 . 46 ( m , 6h ), 8 . 34 ( s , 3h ), 8 . 34 ( dd , 3h ), 7 . 99 ( dd , 3h ), 7 . 83 ( m , 3h ), 7 . 61 ˜ 7 . 29 ( m , 24h ), 6 . 22 ( s , 6h ). ms ( m / z , fd + ): 1066 . 1 benzo [ 1 , 2 - b : 3 , 4 - b ′: 5 , 6 - b ″] tris [ 1 ] benzothiophene ( the prepared method from tetrahedron , 42 ( 2 ), 763 - 73 ; 1986 ) instead of 5 , 5 , 10 , 10 , 15 , 15 - hexamethyl - 10 , 15 - dihydro - 5h - diindeno [ 1 , 2 - a : 1 ′, 2 ′- c ] fluorene , except for using the same method as in synthesis example 1 , the desired compound of 2 , 7 , 12 - tribromo - benzo [ 1 , 2 - b : 3 , 4 - b ′: 5 , 6 - b ″] tris [ 1 ] benzothiophene ( yield = 52 %) was obtained . ms ( m / z , fd +): 629 . 9 2 , 7 , 12 - tribromo - benzo [ 1 , 2 - b : 3 , 4 - b ′: 5 , 6 - b ″] tris [ 1 ] benzothiophene instead of 3 , 8 , 13 - tribromo - 5 , 5 , 10 , 10 , 15 , 15 - hexamethyl - 10 , 15 - dihydro - 5h - diindeno [ 1 , 2 - a : 1 ′, 2 ′- c ] fluorene and 5 - octylbiphenyl - 2 - ylboronic acid instead of biphenyl - 2 - ylboronic acid , except for using the same method as in synthesis example 1 , the desired compound of 2 , 7 , 12 - tri ( 5 - octyl biphenyl - 2 - yl )- benzo [ 1 , 2 - b : 3 , 4 - b ′: 5 , 6 - b ″] tris [ 1 ] benzothiophene ( yield = 58 %) was obtained . ms ( m / z , fd +): 1190 . 2 2 , 7 , 12 - tri ( 5 - octyl biphenyl - 2 - yl )- benzo [ 1 , 2 - b : 3 , 4 - b ′: 5 , 6 - b ″] tris [ 1 ] benzothiophene instead of 3 , 8 , 13 - tri ( biphenyl - 2 - yl )- 5 , 5 , 10 , 10 , 15 , 15 - hexamethyl - 10 , 15 - dihydro - 5h - diindeno [ 1 , 2 - a : 1 ′, 2 ′- c ] fluorene , except for using the same method as in synthesis example 1 , the desired ex18 ( yield = 24 %) was obtained . ms ( m / z , fd +): 1182 . 9 ito - coated glasses with 9 ˜ 12 ohm / square in resistance and 120 ˜ 160 nm in thickness are provided ( hereinafter ito substrate ) and cleaned in a number of cleaning steps in an ultrasonic bath ( e . g . detergent , deionized water ). before vapor deposition of the organic layers , cleaned ito substrates are further treated by uv and ozone . all pre - treatment processes for ito substrate are under clean room ( class 1000 ). these organic layers are applied onto the ito substrate in order by vapor deposition in a high - vacuum unit ( 10 − 7 torr ), such as : resistively heated quartz boats . the thickness of the respective layer and the vapor deposition rate ( 0 . 1 ˜ 0 . 3 nm / sec ) are precisely monitored or set with the aid of a quartz - crystal monitor . it is also possible , as described above , for individual layers to consist of more than one compound , i . e . in general a host material doped with a dopant material . this is achieved by co - vaporization from two or more sources . dipyrazino [ 2 , 3 - f : 2 , 3 -] quinoxaline - 2 , 3 , 6 , 7 , 10 , 11 - hexacarbonitrile ( hat - cn ) is used as hole injection layer in this organic el device . n , n - bis ( naphthalene - 1 - yl )- n , n - bis ( phenyl )- benzidine ( npb ) is most widely used as the hole transporting layer , 4 -( 10 , 10 - dimethyl - 10h - indeno [ 2 , 1 - b ] triphenylen - 13 - yl ) dibenzo [ b , d ] thiophene ( h1 ) and 10 , 10 - dimethyl - 13 -( 3 -( triphenylen - 2 - yl ) phenyl )- 10h - indeno [ 2 , 1 - b ] triphenylene ( h2 ) are used as phosphorescent host for comparable material in this invention for organic el device . 2 -( 10 , 10 - dimethyl - 10h - indeno [ 2 , 1 - b ] triphenylen - 13 - yl )- 4 , 6 - bis - 5 - phenylbiphenyl - 3 - yl )- 1 , 3 , 5 - triazine ( et3 ) is used as electron transporting material to co - deposit with 8 - hydroxyquinolato - lithium ( liq ) in organic el device . tris ( 2 - phenylpyridinato ) iridium ( iii ) ( d2 ) is used as phosphorescent dopant . the prior art of oled materials for producing standard organic el device control and comparable material in this invention shown its chemical structure as following structure : a typical organic el device consists of low work function metals , such as al , mg , ca , li and k , as the cathode by thermal evaporation , and the low work function metals can help electrons injecting the electron transporting layer from cathode . in addition , for reducing the electron injection barrier and improving the organic el device performance , a thin - film electron injecting layer is introduced between the cathode and the electron transporting layer . conventional materials of electron injecting layer are metal halide or metal oxide with low work function , such as : lif , liq , mgo , or li 2 o . on the other hand , after the organic el device fabrication , el spectra and cie coordination are measured by using a pr650 spectra scan spectrometer . furthermore , the current / voltage , luminescence / voltage and yield / voltage characteristics are taken with a keithley 2400 programmable voltage - current source . the above - mentioned apparatuses are operated at room temperature ( about 25 ° c .) and under atmospheric pressure . using a procedure analogous to the above mentioned general method , phosphorescent emitting organic el device having the following device structures are produced ( see fig1 . ): device i : ito / hat - cn ( 20 nm )/ npb ( 110 nm )/ phosphorescent host ( phhost ) doped 12 % d2 ( 35 nm )/ hole blocking material ( hbm )( 10 nm )/ et3 co - deposit 50 % liq ( 40 nm )/ liq ( 1 nm )/ al ( 160 nm ). the i - v - b , efficiency ( at 1000 nits ) and half - life time of phosphorescent emitting organic el device testing report as table 1 . the half - life time is defined that the initial luminance of 3000 cd / m 2 has dropped to half . in the above preferred embodiments for organic el device test report ( see table 1 ), we show that the optoelectronic material with a general formula ( i ) in the present invention display good performance and shown lower driving voltage and longer half - life time for organic el device in the present invention . ito - coated glasses with 9 ˜ 12 ohm / square in resistance and 120 ˜ 160 nm in thickness are provided ( hereinafter ito substrate ) and cleaned in a number of cleaning steps in an ultrasonic bath ( e . g . detergent , deionized water ). before vapor deposition of the organic layers , cleaned ito substrates are further treated by uv and ozone . all pre - treatment processes for ito substrate are under clean room ( class 1000 ). these organic layers are applied onto the ito substrate in order by vapor deposition in a high - vacuum unit ( 10 − 7 torr ), such as : resistively heated quartz boats . the thickness of the respective layer and the vapor deposition rate ( 0 . 1 ˜ 0 . 3 nm / sec ) are precisely monitored or set with the aid of a quartz - crystal monitor . it is also possible , as described above , for individual layers to consist of more than one compound , i . e . in general a host material doped with a dopant material . this is achieved by co - vaporization from two or more sources . the current density / voltage ( j - v ) characteristics of this opv device are taken with a keithley 2400 programmable voltage - current source meter in the dark and under an illumination intensity of 100 mw / cm 2 with a calibrated am 1 . 5 g sun . subphthalocyanine chloride ( subpc ) or subnaphthalocyanine chloride ( subnc ) are used as donors in this opv device , c60 or c70 is most widely used as an acceptor , and 2 , 9 - dimethyl - 4 , 7 - diphenyl - 1 , 10 - phenanthroline ( bcp ) is used as an exciton blocking layer . the prior art of opv materials for producing standard opv device control and comparable material in this invention shown its chemical structure as following structure : using a procedure analogous to the above mentioned general method , opv device having the following device structures are produced ( see fig2 . ): device i : ito / buffer layer / htm ( 15 nm )/ subpc ( 20 nm )/ c60 ( 30 nm )/ bcp ( 10 nm )/ lif ( 1 nm )/ al ( 120 nm ). the j - v , efficiency and ff (%) of opv device testing report are shown as table 2 . in the above preferred embodiments for opv device test report ( see table 2 ), we show that the optoelectronic material with a general formula ( i ) in the present invention used as hole transport material ( htm ) for opv device display higher efficiency , ff % and shown higher v oc for opv device in the present invention . the substrate of otft device in the present invention is p + - doped si with thermally grown 250 nm sio 2 . the deposition parameters for the sol - gel coated polymethyl methacrylate thin films on the sio 2 gate oxide , its role as a surface modifying layer and the organic thin - film layer material deposition procedure are explained elsewhere . ultrathin lif layer was then deposited using thermal evaporation onto the organic thin - film material and the thickness of the lif layer was varied from 1 to 10 å . finally , 60 nm thick aluminum was thermally evaporated onto the organic thin - film material through a shadow mask to form the s / d electrodes . the thickness of the films was monitored by using a quartz crystal monitor . the output characteristics of a device with a channel width of 20 cm and a length of 10 um exhibited typical fet characteristics . the electrical measurements of the devices were performed in a nitrogen environment inside a glove box using hp 4156c and keithley 4200 semiconductor parameter analyzer . the capacitance - voltage ( c - v ) measurement was performed by agilent e4980a precision lcr meter . the prior art of otft materials for producing standard otft device control and comparable material in this invention shown its chemical structure as following structure : using a procedure analogous to the above mentioned general method , otft device having the following device structures as fig3 , organic thin - film material ( ex18 ), comparable material ( pentacene and 6 , 13 - bis ( tri isopropylsilylethynyl ) pentacene ( tips )) were spin - coated or deposited over the device structure to respectively form a thin film . the field - effect carrier mobility and on / off current ratio of otft device data are shown as table 3 . in the above preferred embodiments for otft device test report ( see table 3 ), we show that the optoelectronic material with a general formula ( i ) in the present invention used as organic thin - film material for otft device display good performance shown the otft exhibited an on / off current ratio of about 1 . 6 × 10 5 , and the apparent field - effect mobility was estimated to be 1 . 0 × 10 − 1 cm 2 v − 1 s − 1 . to sum up , the present invention discloses an organic optoelectronic material which can be used for organic el device , opv device or otft device is disclosed . the mentioned organic optoelectronic material are represented by the following formula ( 1 ): x independently represent a divalent bridge selected from the atom or group consisting from o , s , c ( r 4 )( r 5 ) and nr 6 , r 4 to r 6 are substituents . m , n and p independently represent an integer of 0 to 10 . r 1 to r 3 are independently selected from the group consisting of a hydrogen atom , a halide , a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms , a substituted or unsubstituted aryl group having 6 to 50 carbon atoms , a substituted or unsubstituted aralkyl group having 6 to 50 carbon atoms , and a substituted or unsubstituted heteroaryl group having 3 to 50 carbon atoms . obvious many modifications and variations are possible in light of the above teachings . it is therefore to be understood that within the scope of the appended claims the present invention can be practiced otherwise than as specifically described herein . although specific embodiments have been illustrated and described herein , it is obvious to those skilled in the art that many modifications of the present invention may be made without departing from what is intended to be limited solely by the appended claims .