referring now to the drawings , in particular to fig2 a - 2e , there are shown steps for forming an alignment mark comprising a step on a wafer . however , the preferred methods disclosed here pertain to forming alignment marks after the obliteration of the original alignment marks ( not shown ) following the chemical - mechanical polishing of the tungsten metal layer forming plugs in contact or via holes . as already described in related art previously , the original alignment marks that are formed in the silicon substrate , as shown in fig1 a - 1f , become unusable during the subsequent processes in which the alignment mark step is covered by an opaque material that does not replicate the shape of the step and hence that of the alignment mark . thus , for the reasons stated , the conventional alignment mark formed elsewhere in the substrate and used to perform the subsequent process steps up to and including the chemical - mechanical polishing of the metal layer is not shown here in order not to unnecessarily obscure the present invention , and also , as it is not necessary to the understanding of the disclosed method of this invention . it will be appreciated by those skilled in the art that the disclosed method of generating a new step as an alignment mark as a part of the normal process steps is an added advantage in the manufacture of semiconductor devices . in fig2 a , substrate ( 100 ), preferably silicon , is provided with gate oxide ( 110 ) and source / drain regions delineated by field oxide regions ( 150 ). gate electrode ( 120 ) is formed over gate oxide ( 110 ) and covered with another oxide layer ( 130 ) at the top region while its sidewalls are shaped further by oxide spacers ( 140 ). it is preferred that the top oxide ( 130 ) has a thickness between about 1000 to 2000 angstroms ( å ). oxide spacers ( 140 ) are formed during the fabrication of the lightly doped drain structures ( 113 ) near source ( 115 ). an interlevel dielectric layer ( ild ), ( 145 ), with thickness between about 3000 to 8000 å is next formed preferably by doping silane - formed sio 2 film with phosphorous and boron . the resulting bpsg layer is obtained by performing a low pressure plasma enhanced chemical vapor deposition ( lpcvd ). this is followed by forming a contact hole and first metal , preferably aluminum . contact hole and first metal are not shown in fig2 a - 2e so as to not obscure the key point of forming a photolithography alignment mark of this invention in a hole , whether a contact hole or a via hole , as described below . an interlevel - metal dielectric layer ( imd ), ( 160 ), is next deposited to a thickness between about 3000 to 10 , 000 å over the ild layer ( 145 ) in fig2 a by employing a low pressure plasma enhanced chemical vapor deposition ( lpcvd ). the substrate of fig2 a is then patterned to form via holes . for clarity , only via hole ( 200 ) is shown . it will be observed that the original alignment mark formed ( not shown ) in silicon would still be visible through the dielectric layers ( 160 ) and ( 145 ) in order to be able to register the patterning mask which is not shown here . next , as shown in fig2 b , cvd tungsten is formed covering the whole substrate . preferably , this is accomplished by silicon reduction of tungsten hexafluoride , wf 6 . next , to form tungsten stud ( 210 ) in via hole ( 200 ), chemical - mechanical polishing ( cmp ) of tungsten layer ( 170 ) is performed . cmp is accomplished by using a slurry preferably comprising the combination of three ingredients : hydrogen peroxide ( h 2 o 2 ) dissolved in water , silica as an abrasive , and ethylene glycol in which the abrasive is suspended . cmp is continued until tungsten is completely removed from the surface of ild layer ( 160 ) on the substrate and leaving only the metal plug ( 210 ) in hole ( 200 ) as shown in fig2 c . it will be appreciated that the blanket metal tungsten as well as the interlevel dielectric layer ( 160 ) below it now covers everywhere on the substrate where there is a cavity including the original alignment mark area mentioned above and not shown in fig2 a - 2e . in other words , after the cmp process , the original alignment mark step is no longer replicated and is covered with opaque metal layer and therefore is not usable . it is the main and key feature of this invention to perform the next process step where a new step is formed for purposes of alignment during the subsequent process steps . therefore , a key step in this embodiment is the removal of a portion of imd layer ( 160 ) to form step ( 220 ) as shown in fig2 d . it is preferred that the step height is between about 1100 to 1300 å . the step height is formed by a reactive ion etch recipe comprising mixture of fluorocarbon and oxygen with argon , cf 4 + chf 3 + o 2 + ar . alternatively , in a second embodiment , shown in fig2 e , alignment step ( 220 ) is formed by removing a portion of tungsten metal from plugs ( 210 ). it is preferred that the step height in this second embodiment is also between about 1100 to 1200 å . the step height is formed by a reactive ion etch recipe comprising mixture of fluorocarbon and brominechloride with oxygen , i . e ., cf 4 and bcl 3 + o 2 . it is disclosed , therefore , that with a simple additional process step , and without the need for conventional &# 34 ; open frame &# 34 ;- like processes , alignment mark can be reformed easily . furthermore , the process of forming the step can be selected between etching the dielectric layer or the metal plug depending upon the process flow on the manufacturing line . though these numerous details of the disclosed method are set forth here , such as process parameters , to provide an understanding of the present invention , it will be obvious , however , to those skilled in the art that these specific details need not be employed to practice the present invention . at the same time , it will be evident that the disclosed methods may be employed in other similar process steps that are too many to cite , such as after the formation of contact holes or via holes in the manufacture of semiconductor devices . that is to say , the disclosed method of re - forming alignment marks may be repeated as many times as needed to form additional metallized layers in forming semiconductor wafers . thus , while the invention has been particularly shown and described with reference to the preferred embodiments thereof , it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the invention .