described herein are embodiments of packages including one or more dice connected to a second die or dice and a third die or dice through , for example , a package or package ( pop ) arrangement . bumpless build - up layer ( bbul ) technology is one approach to a packaging architecture . among its advantages , bbul eliminates the need for assembly , eliminates prior solder ball interconnections ( e . g ., flip - chip interconnections ), reduces stress on low - k interlayer dielectric of dies due to die - to - substrate coefficient of thermal expansion ( cte ) mismatch , and reduces package inductions through elimination of core and flip - chip interconnect for improved input / output ( i / o ) and power delivery performance . typical of bbul technology is a die or dies embedded in a substrate , which then has one or more build - up layers formed thereon . processes such as laser drilling , lithography and plating may be used for via formation to contacts on the die or dice and to form patterned conductive material lines or traces . alternating layers of patterned conductive material are separated by insulating material typically applied as a film . fig1 shows a cross - sectional side view of a microelectronic package according to one embodiment . as illustrated in fig1 , microelectronic package 100 utilizes bumpless build - up layer ( bbul ) technology . microelectronic package 100 includes carrier 120 having surface 125 and opposing surface 127 . die 110 , such as a microprocessor die ( e . g ., a system on chip die ) is embedded in carrier 120 . in this manner , die 110 and carrier 120 are in direct physical contact with each other ( e . g ., there are no solder bumps connecting die 110 to carrier 120 ). die 110 is directly connected to carrier 120 at its device side ( device side down as viewed ). carrier 120 may include multiple build - up layers of conductive material ( e . g ., patterned conductive lines or traces ) separated by dielectric material . the layer ( s ) of conductive material provide connectivity to the die ( power , ground input / output , etc .). fig1 shows four layers of conductive material ( conductive material 140 a , conductive material 140 b , conductive material 140 c and conductive material 140 d ) disposed between five layers of dielectric material ( dielectric material 130 a , dielectric material 130 b , dielectric material 130 c , dielectric material 130 d and dielectric material 130 e ). the various conductive layers are connected to die 110 ( e . g ., to contact points on a device side of die 110 ) and to one another where desired by conductive vias ( conductive vias 145 a , conductive vias 145 b , conductive vias 145 c and conductive vias 145 d ). in the embodiment shown in fig1 , die 110 is a through - silicon via ( tsv ) die . fig1 shows die 110 having conductive vias 150 that extend from a device side of the die to the contacts on a backside of the die . in this manner , a second device such as a logic device or memory device may be connected to die 110 through the contacts on the backside of the die . in one embodiment , a portion of the contacts ( contacts 155 a ) are arranged and configured for connection to ( operable to connect to ) a memory die in a wide i / o configuration . fig1 shows second device 160 that is a dynamic random access memory ( dram ) die that , in one embodiment , is connected to contacts 155 a on a backside of die 110 in a wide i / o memory configuration . the connection is representatively by way of solder material . in addition to the ability to connect a second device such as a memory die to a backside of die 110 , in the embodiment shown in fig1 , additional contacts 155 b on a backside of die 110 may be used to connect a third device . as shown in fig1 , carrier 120 includes contacts 170 on surface 125 . in this embodiment , contacts 170 are connected to contacts 155 b on the backside of die 110 that are connected to a device side of die 110 through tsvs . in this embodiment , carrier 120 includes dielectric material 130 f that embeds die 110 and at least the opposing sides of second device 160 and defines surface 125 . as shown , die 110 has a thickness ( a z - height of sidewall portions ) denoted as “ a ” and second device has a thickness ( a z - height of sidewall portions ) denoted as “ b ”. thus , dielectric material 130 f has a thickness “ a ” plus “ b ”. in one embodiment , dielectric material 130 f is a material such as abf applied as a film or films . conductive through vias 165 are between respective ones of contacts 155 b on a backside of die 110 and contacts 170 on surface 125 . contacts 170 allow for the connection of a third device such as a memory die or package or several devices ( e . g ., stacked devices ). fig1 shows third device 180 that is , for example , a dynamic random access memory ( dram ) device . in an embodiment where device 180 is encompassed in a package , a package - on - package ( pop ) configuration is described . fig2 shows a top view of structure 100 through line 2 - 2 ′ of fig1 . fig2 shows contacts 155 a and contacts 155 b on a backside of die 110 . contacts 155 a and contacts 155 b are connected to through - substrate vias ( conductive vias 150 ) to a device side of die 110 . fig2 shows contacts 155 a aligned and suitable for connection to second device 160 ( see fig1 ). in one embodiment , contacts 155 a are operable or configured to connect a second device that is a memory device such as a wide i / o memory configuration . fig2 also shows contacts 155 b disposed around a periphery or perimeter of a backside of die 110 . contacts 155 b are suitable , in one embodiment , for connecting to a third device or package . fig3 shows the structure of fig1 through line 3 - 3 ′. in this embodiment , second device 160 , such as a dram memory die , is connected to die 110 through contacts 155 a on a backside of die 110 . fig4 shows the structure of fig1 through line 4 - 4 ′. fig4 shows third device 180 , such as a memory die or a package connected to die 110 through contacts 170 on a backside of die 110 . fig5 - 8 describe an embodiment for forming a microelectronic package , such as microelectronic package 100 ( fig1 ) including one or more devices connected thereto . referring to fig5 , fig5 shows a side view of die 210 with contact points 214 on device side 212 of die 210 and contact pads 218 on die backside 217 . fig5 illustrates through - substrate vias 215 extending from device side 212 to die backside 217 . die backside 217 , in this embodiment , includes metal routing layer 216 and contact pads 218 . in this embodiment , second device 220 , such as a wide i / o memory die is connected to a portion of the contact pads 218 on a backside representatively by solder material connection . fig6 shows the structure of fig5 following the formation of a portion of a package on device side 212 of die 210 . in one embodiment , the package portion includes four layers of conductive material ( e . g ., conductive traces ) each separated by dielectric material to provide conductivity to die 110 and link die 110 to an external device or structure ( e . g ., a printed circuit board ). a bbul process may be used to form the conductive material layers . fig6 shows four conductive layers , lines or traces ( conductive material 240 a , conductive material 240 b , conductive material 240 c and conductive material 240 d ) built up from a device side ( device side 212 ) of die 210 . in one embodiment of a bbul process , a film of dielectric material such as an abf is initially introduced on device side 212 of die 210 . laser vias are then drilled through the dielectric material to contact points or pads 214 of die 210 . the vias are then desmeared and electroless copper is introduced on a surface of the dielectric material . a sacrificial material such as a dry film resist is then introduced and patterned on the electroless copper to define a routing layer or traces ( routing layer or traces of conductive material 240 a ). the sacrificial material is then stripped followed by a flash etch to remove electroless copper between traces . the above - described sequence is carried out multiple times until all desired build - up layers are completed ( e . g ., layers of conductive material 240 b , conductive material 240 c and conductive material 240 d are introduced and patterned ). following the last layer of patterned conductive material ( conductive material 240 d ), a solder resist film may be laminated and then patterned using lithography techniques to define openings for solder material . fig6 shows the structure including solder material 260 connected to the structure . fig7 shows the structure of fig6 following the introduction of build - up layers on or to a die backside to create contact points for a device or package . in one embodiment , a dielectric material is introduced to embed die 210 ( e . g ., dielectric material introduced to a thickness of die 210 defined by a height of the sidewall ). as shown in fig7 , film or films 270 of dielectric material ( e . g ., abf material ) extends onto a backside of die 210 and embed each of the opposing sidewalls of second device 220 ( e . g ., film 270 has a thickness at least equal to a thickness of second device 220 ). following the introduction of film 270 , laser vias may be drilled into film 270 to form openings to contact points or pads 218 on backside 217 of die 210 . conductive vias 280 and contact pads 285 may be formed on a surface of film 270 in a manner such as described previously for defining routing traces . fig8 shows the structure of fig7 following the attachment of a third device to the structure . fig8 shows third device 295 of , for example , a memory die or package ( e . g ., a package including a dram device ) connected to contact pads 218 through solder material connection 297 . third device 295 is connected through conductive vias 280 to contact pads 218 that are connected to tsvs 215 of die 210 . in the above - described process , a size ( area ) of second device 220 is less than a size ( area ) of die 210 . in this manner , second device 220 is directly connected to contact points or pads on die 210 and third device 295 is connected with contact pads 285 and directly through a dielectric film to contact pads 218 on a backside surface of die 210 without any routing layer therebetween . fig9 shows a cross - sectional side view of another embodiment of a microelectronic package . as illustrated in fig9 , microelectronic package 300 utilizes bbul technology . microelectronic package 300 includes carrier 320 having surface 325 and opposing surface 327 . die 310 , such as a microprocessor die ( e . g ., a system on chip die ) is embedded in carrier 320 . in this manner , die 310 and carrier 320 are in direct physical contact with each other ( e . g ., there are no solder bumps connecting die 310 to carrier 320 ). die 310 is directly connected to carrier 320 at its device side ( device side down as viewed ). carrier 320 , in this embodiment , includes multiple build - up layers of conductive material ( e . g ., patterned conductive lines or traces ) separated by dielectric material . the layers of conductive material ( e . g ., conductive material 340 a , conductive material 340 b , conductive material 340 c and conductive material 340 d ) are disposed between layers of dielectric material ( dielectric material 330 a , dielectric material 330 b , dielectric material 330 c , dielectric material 330 d and dielectric material 330 e ). the various conductive layers are connected to die 310 ( e . g ., to contact points on a device side of die 310 ) and to one another where desired by conductive vias ( e . g ., conductive vias 345 a , conductive vias 345 b , conductive vias 345 c and conductive vias 345 d ). in the embodiment shown in fig9 , die 310 is a tsv die . fig9 shows die 310 having conductive vias 350 ( illustrated in dashed lines ) that extend from a device side of the die to contacts on a backside of the die . in this manner , a second device or devices such as a logic device or memory device may be connected to die 310 through the contacts on the backside of the die . in one embodiment , such contacts are arranged and configured for connection to ( operable to connect to ) a memory die in a wide i / o configuration . fig9 shows second device 360 that is , for example , a dram die connected to contacts on a backside of die 310 in a wide i / o memory configuration . the connection is representatively by way of solder material . in addition to having contacts on a backside of die 310 , die 310 also includes sidewall contacts 352 at or extending from one or more sidewalls of the die . sidewall contacts 352 allow for connection of an additional device ( a third device or devices ) through , for example , connections to routed traces from the sidewall contacts . in one embodiment , sidewall contacts 352 are connected to traces from a device side and / or a backside of die 310 . fig9 shows conductive material 365 of patterned traces connected to respective ones of sidewall contacts 352 and extending laterally ( as viewed ) from the respective contacts . the routing of traces from sidewall connections of die 310 allows an additional device or devices to form part of a microelectronic package , even where second device 360 has the greater size ( e . g ., occupied the greater area ) than die 310 . as illustrated in fig9 , traces of conductive material 365 may be routed from respective ones of sidewall contacts 352 to an area of the package outside of an area by second device 360 . fig1 shows a top view of the structure through line 10 - 10 ′ of fig9 . as illustrated in fig1 , second device 360 has an area greater than an area of die 310 ( die 310 shown in dashed lines beneath second device 360 ). conductive material 365 is routed laterally from sidewall contacts 352 a distance beyond a perimeter of second device 360 . referring again to fig9 , overlying the disposed conductive material 365 is dielectric material 367 of , for example , an abf film . fig9 also shows contacts 370 connected to conductive material 365 . contacts 370 are , for example , copper contacts formed as described above ( e . g ., forming an opening in dielectric material 367 , seeding the opening , plating copper material in the opening and on a superior surface of dielectric material 367 , and removing any mask and undesired seeding material ). overlying dielectric layer 367 is embedding material 375 of , for example , an epoxy ( e . g ., cel - 9740hf , commercially available from hitachi chemical co ., ltd . of tokyo , japan ). openings are formed through embedding material 375 to contacts 370 . fig9 shows third device 380 of , for example , a memory die or a package including a memory die connected to contacts 370 through solder material connections . fig1 shows a cross - sectional side view of a die having sidewall contacts . die 410 includes a device side including contacts 415 . die 410 is a tsv dice and includes through - substrate vias 455 extending from a device side to a backside of the die . die 410 includes contacts 457 on a backside of the die . the contacts on a backside of each die are connected to through through - silicon vias to a front side of the die . fig1 shows sidewall contacts 450 a and contacts 450 b on opposing sidewalls of die 410 . as illustrated , sidewall contact 450 a is connected to a device side of die 410 ( a conductive contact point on device side ) by trace 461 ( e . g ., a plated trace ). fig1 shows die 410 having on a right side ( as viewed ) two rows of sidewall contacts represented by reference numeral 450 b . sidewall contacts 450 b , in the illustrated embodiment , are respectively connected to conductive contact points on a backside and a device side of die 310 by trace 462 and trace 463 , respectively . the number of rows of sidewall contacts will depend , in one aspect , on the desired number of connections and a thickness of the die . in one embodiment , the forming of sidewall contacts and routing of traces from a device side or a backside of a die may be done at a die fabrication stage ( e . g ., after a die is singulated ) or the packaging stage . fig1 - 16 describe an embodiment of a process of forming a structure of microelectronic package similar to that of microelectronic package of fig9 . fig1 shows die 510 of , for example , a microprocessor ( e . g ., a system on chip die ). die includes device side 515 including a number of contacts 520 . die 510 is also a tsv die and includes conductive vias from a device side of the die to a backside . die 510 further includes sidewall contacts 525 disposed , in this embodiment , on each sidewall portion of the die . sidewall contacts 525 are formed at the die fabrication stage . fig1 also shows second device 530 such as a memory die connected to die 510 through contacts on a backside of die 510 . in one embodiment , second device 530 is a memory die and contacts are arranged and configured for a wide i / o configuration . one representative connection method of connecting second device 530 of a memory die to contacts on a backside of die 510 is through solder material connections . fig1 shows the structure of fig1 following the formation of a portion of a package . in one embodiment , the package portion includes four layers of conductive material ( e . g ., conductive traces on a device side of die 510 ) each separated by dielectric material to provide conductivity to die 510 and link die 510 to an external device or structure ( e . g ., a printed circuit board ). a bbul process may be used to form the conductive material layers . fig1 shows four conductive layers , lines or traces ( conductive material 540 a , conductive material 540 b , conductive material 540 c and conductive material 540 d ) built up from a device side ( device side 515 ) of die 510 . in one embodiment of a bbul process , a film of dielectric material such as an abf is initially introduced on device side 515 of die 510 . laser vias are then drilled through the dielectric material to contacts 520 of die 510 . the vias are then desmeared and electroless copper is introduced on a surface of the dielectric material . a sacrificial material such as a dry film resist is then introduced and patterned on the electroless copper to define a routing layer or traces ( routing layer or traces of conductive material 540 a ). the sacrificial material is then stripped followed by a flash etch to remove electroless copper between traces . the above - described sequence is carried out multiple times until all desired build - up layers are completed ( e . g ., layers of conductive material 540 b , conductive material 540 c and conductive material 540 d are introduced and patterned ). fig1 shows layers of conductive materials 540 a - 540 b set up respectively between dielectric material 530 a , dielectric material 530 b , dielectric material 530 c and dielectric material 530 d , each of , for example , an abf film . dielectric material of , for example , is a solder dielectric film 530 e may be laminated and patterned using lithography techniques to define openings for solder material to , for example , conductive material layer 540 d . in addition to the build - up layers on device side of die 510 , fig1 also shows conductive material 550 as routed traces from sidewall contacts 525 of die 510 . initially , a dielectric film of , for example , abf may be introduced on dielectric material 530 a , the dielectric film having a thickness equivalent to a distance between a sidewall contact and a device side of the die . fig1 shows dielectric material 535 of , for example , abf disposed on dielectric material 530 a . overlying dielectric material 535 is conductive material 550 . conductive material 550 may be introduced as described above , such as by seeding an area of dielectric material 535 with electroless copper , patterning a masking material to define routing traces from sidewall contacts 525 and electroplating copper to form the traces and finally removing the sacrificial material and any undesired electroless copper . in one embodiment , conductive material 550 is formed to a thickness equivalent to a diameter , d , of sidewall contacts 525 . overlying conductive material 550 in fig1 is a dielectric material such as an abf film . collectively , dielectric film 555 , conductive material 550 and optional dielectric material 535 encompass or have a thickness at least equivalent to the sidewall thickness of die 510 and , in the embodiment shown in fig1 , to a thickness greater than a sidewall thickness of die 510 . following the introduction of dielectric material 555 , openings are made through the dielectric material and contacts 558 are formed to conductive material 550 for connection of a third device . the contacts may be formed such as described above . fig1 shows the structure of fig1 following the introduction of an embedding material on the structure . in one embodiment , embedding material 560 is , for example , a dielectric material such as an epoxy or other mold compound that is introduced as a liquid and allowed to solidify ( e . g ., solidifying in presence of heat ). embedding material 560 has a thickness greater than a thickness of second device 530 and therefore embeds second device 530 ( e . g ., at least surrounds the sidewall portions and , in the embodiment shown , is disposed on a top surface of second device 530 ( as viewed )). fig1 shows the structure of fig1 following the exposure of contacts 558 through embedding material 560 . in one embodiment , contacts 558 may be exposed by a laser drilling process , wherein the process forms openings to contacts 558 using electromagnetic radiation . fig1 also shows the introduction of solder material 570 on contacts 558 . fig1 shows the structure of fig1 following the connection of third device 580 to the structure . in one embodiment , third device 580 is a package including a memory die ( e . g ., a dram memory die or dice ). third device 580 includes a number of contact points or pads . fig1 shows solder material 585 introduced on the contact points or pads . once solder material 585 is introduced , third device 580 is connected to the structure through the connection of solder material 585 to solder material 570 and , for example , a reflow process . fig1 illustrates a computing device 600 in accordance with one implementation . the computing device 600 houses board 602 . board 602 may include a number of components , including but not limited to processor 604 and at least one communication chip 606 . processor 604 is physically and electrically connected to board 602 . in some implementations at least one communication chip 606 is also physically and electrically connected to board 602 . in further implementations , communication chip 606 is part of processor 604 . depending on its applications , computing device 600 may include other components that may or may not be physically and electrically connected to board 602 . these other components include , but are not limited to , volatile memory ( e . g ., dram ), non - volatile memory ( e . g ., rom ), flash memory , a graphics processor , a digital signal processor , a crypto processor , a chipset , an antenna , a display , a touchscreen display , a touchscreen controller , a battery , an audio codec , a video codec , a power amplifier , a global positioning system ( gps ) device , a compass , an accelerometer , a gyroscope , a speaker , a camera , and a mass storage device ( such as hard disk drive , compact disk ( cd ), digital versatile disk ( dvd ), and so forth ). representatively , processor 604 is a system on chip and is packaged in a microprocessor package assembly such as described above with a dram die connected to a backside of processor 604 in a wide i / o configuration and another memory device ( e . g ., a dram device ) also connected to the package . communication chip 606 enables wireless communications for the transfer of data to and from computing device 600 . the term “ wireless ” and its derivatives may be used to describe circuits , devices , systems , methods , techniques , communications channels , etc ., that may communicate data through the use of modulated electromagnetic radiation through a non - solid medium . the term does not imply that the associated devices do not contain any wires , although in some embodiments they might not . communication chip 606 may implement any of a number of wireless standards or protocols , including but not limited to wi - fi ( ieee 802 . 11 family ), wimax ( ieee 802 . 16 family ), ieee 802 . 20 , long term evolution ( lte ), ev - do , hspa +, hsdpa +, hsupa +, edge , gsm , gprs , cdma , tdma , dect , bluetooth , derivatives thereof , as well as any other wireless protocols that are designated as 3g , 4g , 5g , and beyond . computing device 600 may include a plurality of communication chips 606 . for instance , a first communication chip 606 may be dedicated to shorter range wireless communications such as wi - fi and bluetooth and a second communication chip 606 may be dedicated to longer range wireless communications such as gps , edge , gprs , cdma , wimax , lte , ev - do , and others . communication chip 606 also includes an integrated circuit die packaged within communication chip 606 such as described above . in further implementations , another component housed within computing device 600 may contain a microelectronic package including an integrated circuit die such as described above . in various implementations , computing device 600 may be a laptop , a netbook , a notebook , an ultrabook , a smartphone , a tablet , a personal digital assistant ( pda ), an ultra mobile pc , a mobile phone , a desktop computer , a server , a printer , a scanner , a monitor , a set - top box , an entertainment control unit , a digital camera , a portable music player , or a digital video recorder . in further implementations , computing device 600 may be any other electronic device that processes data . in the description above , for the purposes of explanation , numerous specific details have been set forth in order to provide a thorough understanding of the embodiments . it will be apparent however , to one skilled in the art , that one or more other embodiments may be practiced without some of these specific details . the particular embodiments described are not provided to limit the invention but to illustrate it . the scope of the invention is not to be determined by the specific examples provided above but only by the claims below . in other instances , well - known structures , devices , and operations have been shown in block diagram form or without detail in order to avoid obscuring the understanding of the description . where considered appropriate , reference numerals or terminal portions of reference numerals have been repeated among the figures to indicate corresponding or analogous elements , which may optionally have similar characteristics . it should also be appreciated that reference throughout this specification to “ one embodiment ”, “ an embodiment ”, “ one or more embodiments ”, or “ different embodiments ”, for example , means that a particular feature may be included in the practice of the invention . similarly , it should be appreciated that in the description various features are sometimes grouped together in a single embodiment , figure , or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of various inventive aspects . this method of disclosure , however , is not to be interpreted as reflecting an intention that the invention requires more features than are expressly recited in each claim . rather , as the following claims reflect , inventive aspects may lie in less than all features of a single disclosed embodiment . thus , the claims following the detailed description are hereby expressly incorporated into this detailed description , with each claim standing on its own as a separate embodiment of the invention .