as shown in fig1 a , a plurality of gate conductors ( gc ) 20 a , 20 b , 20 c 20 d are formed on a substrate 10 . a gap is re - retained between each pair of 20 a and 20 b , 20 b and 20 c , 20 c and 20 d . gap 21 denotes the gap between 20 a and 20 b . a photo - resist layer 22 is formed on gcs 20 a , 20 b , 20 c , 20 d and the gaps between gcs , including gap 21 , so that gcs 20 a , 20 b , 20 c , 20 d are entirely covered with photo - resist layer 22 , as shown in fig1 b . in the next step , as shown in fig1 c , a part of photo - resist layer 22 is removed to expose the gap , i . e ., substrate 10 , between 20 c and 20 a , the gap between 20 b and 20 d , gc 20 c , gc 20 d , the left half of gc 20 a , and the right half of gc 20 b . the remaining photo - resist layer 22 still fills gap 21 , and covers the right half of gc 20 a and the right half of gc 20 b . it is worth noticing that photo - resist layer 22 is easy for removal in the above step , so that gap 21 can use photo - resist layer 22 in fig1 c to pre - retain a bit line cb opening in order to avoid the drawbacks of etching techniques used in conventional bit line cb opening manufacturing process , which usually causes damage to the surfaces of the right half of gc 20 a and the left half of gc 20 b . therefore , the remaining photo - resist layer 22 is where the bit line cb opening of the dram will be located . the removal of photo - resist layer 22 can be accomplished by either a dry approach or a wet approach . the wet approach usually uses the spm to remove photo - resist layer 22 . the spm is a mixed solution of h 2 so 4 and h 2 o 2 . as shown in fig1 d , the next step is to form a liquid phase deposition ( lpd ) oxidation layer 24 at around room temperature ( 25 - 40 ° c .) at the exposed location of the removed photo - resist layer 22 . the exposed locations of the removed photo - resist layer 22 refer to the gap between 20 a and 20 c , the gap between 20 b and 20 d , the exposed gcs 20 c , 20 d , and the exposed part of gcs 20 a , 20 b , as shown in fig1 c . it is worth noticing that the height of lpd oxidation layer 24 could be slightly lower than that of photo - resist layer 22 . although photo - resist layer 22 is prone to damage in an environment with a slightly high temperature , the bit line opening pre - retained by photo - resist layer 22 is , however , still well preserved during the aforementioned step because the aforementioned step of forming lpd oxidation layer 24 is carried out at room temperature . the next step , as shown in fig1 e , is to remove the remained photo - resist layer 22 on gap 21 and partly covered gc 20 a , 20 b . this step forms a bit line cb opening 26 . then , as shown in fig1 f , a polysilicon layer 28 is formed on bit line cb opening 26 and lpd oxidation layer 24 . the next step is to remove a part of polysilicon layer 28 to expose the upper surface of lpd oxidation layer 24 at the edge adjacent to filled - with - polysilicon bit line cb opening 26 , as shown in fig1 g . the removal of polysilicon layer 28 is usually accomplished by chemical mechanical polishing ( cmp ) or etching . as shown in fig1 h , the next step is to remove lpd oxidation layer 24 to expose a part of substrate 10 and a part of gcs . the removal of lpd oxidation layer 24 can be accomplished by diluted hydrofluoric acid ( dhf ) or buffered hydrofluoric acid ( bhf ). the dhf is a mixed solution of hydrofluoric acid and water at the ratio of 1 : 30 to 1 : 500 , and the bhf is a mixed solution of ammonium fluoride , hydrofluoric acid , and water . the ratio between ammonium fluoride and hydrofluoric acid is 6 : 1 to 5 : 1 . the next step , as shown in fig1 , is to form a nitrogen compound layer 30 , which may have a thickness of 120 å ± 10 %, on polysilicon layer 28 and on the exposed surfaces of substrate 10 and gcs 20 c , 20 d , and part of gcs 20 a , 20 b . the next step , as shown in fig1 j , is to form a bpsg layer 32 on nitrogen compound layer 30 , followed by the step of removing bpsg layer 32 to expose nitrogen compound layer 30 on top of polysilicon layer 28 , as shown in fig1 k . then , a tetra - ethyl - oetho - silicate ( teos ) layer 34 is formed on the exposed nitrogen compound layer 30 on top of polysilicon layer 28 , and bpsg layer 32 , as shown in fig1 l . and finally , as shown in fig1 m , a tungsten plug 36 is formed inside teos layer 34 on top of polysilicon layer 28 . from the aforementioned disclosure , the present invention , using an lpd oxidation layer 24 and photo - resist layer 22 to pre - retain a bit line cb opening , does not require etching for manufacturing bit line cb opening , as conventional techniques . therefore , the present invention avoids the potential damage on the surface of the right half of gc 20 a and the surface of left half of gc 20 b caused by etching . this also avoids the short - circuit problem between bit lines and word lines , as well as the open - circuit problem of bit line cb openings . while the invention has been described in connection with what is presently considered to the most practical and preferred embodiment , it is to be understood that the invention is not to be limited to the disclosed embodiment , but on the contrary , is intended to cover various modifications and equivalent arrangement included within the spirit and scope of the appended claims .