fig1 is a schematic layout diagram illustrating scribe - line structures formed along a semiconductor substrate having at least a semiconductor device thereon , the scribe - line structures being formed according to the present invention , and fig2 and 3 are schematic cross - sectional views of two different scribe - line structures as seen in fig1 taken along the section line i - i ′ of fig1 , respectively . referring to fig1 to 3 , a lower layer 20 and a pad layer 30 are sequentially disposed on a semiconductor substrate 10 . a molding layer 40 is disposed on the pad layer 30 . the molding layer 40 has a first protective contact hole 47 ( as seen in fig2 ) or alternatively has first and second protective contact holes 48 ( as seen in fig3 ), or , as shown in fig1 , both . the first protective contact hole 47 and / or the first and second protective contact holes 48 may be surrounded with the molding layer 40 along the sides and the pad layer 30 along the bottom ( s ) thereof . in some invention embodiments , however , the pad layer 30 may not be disposed between the molding layer 40 and the lower layer 20 . in this case , the first protective contact hole 47 and / or the first and second protective contact holes 48 may be surrounded with the molding layer 40 along the sides and the lower layer 20 along the bottom ( s ) thereof . it is desirable that the lower layer 20 consist essentially of a material having a greater mechanical intensity ( strength ) than that of either the pad layer 30 or the molding layer 40 . the lower layer 20 may , for example , be formed of silicon oxide ( sio 2 ). at the same time , the molding layer 40 should preferably consist essentially of a material having a lower mechanical intensity ( strength ) than that of the pad layer 30 . it is especially desirable that the pad layer 30 be formed of what will herein be called a “ low - k material ,” for example a material selected from the group consisting of the substances commonly known in the trade as black diamond , coral , aurora , and materials having dielectric constants similar thereto . for some invention embodiments , the pad layer 30 and the molding layer 40 may alternatively be formed of what will herein be called a “ lower - k material ,” for example a material selected from the group consisting of the substances commonly known in the trade as nanoporous silicate , bcb , flare , alcap , lkd , and materials having dielectric constants similar thereto . for some invention embodiments , the molding layer 40 may be composed of a compositie of two or more low - k materials . for some invention embodiments , the pad layer 30 may also be composed of a compositie of two or more of the previously mentioned low - k materials or of two or more of the previously mentioned lower - k materials . it is also desirable in accordance with this invention that a set of the protective hole ( s ), such as first protective contact hole 47 , be disposed along a scribe - line 90 of fig1 to form a trench as shown in fig2 . the trench has a predetermined contact hole width b . it is similarly desirable that a set of the first and second protective contact holes 48 be disposed along the scribe - line 90 of fig1 to form two trenches as shown in fig3 . each of the first and second protective contact holes 48 in fig3 defines a trench with a predetermined contact hole width c . a base layer 50 , a buried layer 60 , and an upper layer 70 may be sequentially disposed on the molding layer 40 so as to fill the first protective contact hole 47 ( fig2 ) and / or the first and second protective contact holes 48 ( fig3 ). it is particularly desirable that the upper layer 70 be formed of silicon nitride ( si 3 n 4 ). it is also desirable that the buried layer 60 and the base layer 50 be formed of a material or materials having a lower mechanical intensity ( strength ) than that of the lower layer 20 . it is particularly desirable , for example , that the base layer 50 and the buried layer 60 consist essentially of a low - k material selected from the group consisting of black diamond , coral , aurora , or materials having dielectric constants similar thereto . in another invention embodiment , the base layer 50 may be a low - k material selected from the group consisting of black diamond , coral , aurora , or materials having dielectric constants similar thereto , while the buried layer 60 may be a lower - k material selected from the group consisting of nanoporous silicate , bcb , flare , alcap , lkd , or materials having dielectric constants similar thereto . also , the base layer 50 may be lower - k material comprising nanoporous silicate , bcb , flare , alcap , lkd , or materials having dielectric constants similar thereto , while the buried layer 60 may be a low - k material selected from the group consisting of black diamond , coral , aurora , or materials having dielectric constants similar thereto . hereinafter , the combination of base layer 50 and buried layer 60 , or , if only one is present , the one layer , will be referred to as dielectric layer 65 . thus , the dielectric layer 65 may comprise either the buried layer 60 or the base layer 50 . the dielectric layer 65 may also be composed of two or more low - k materials . alternatively , the dielectric layer 65 may be composed of a combination of two or more low - k materials and also of two or more lower - k materials , said material layers being stacked in turn . protective layer patterns 80 are shown disposed on the upper layer 70 . it is desirable that the protective layer patterns 80 be disposed so as to be spaced a distance away from each other . as seen in fig2 and fig3 respectively , a spacing distance a between the protective layer patterns 80 is different from either the contact hole width b of the first protective contact hole 47 ( fig2 ) or the contact hole width c of each of the first and second protective contact holes 48 ( fig3 ). it is particularly desirable that the protective layer patterns 80 be formed of polyimide . fig4 to 11 are schematic cross - sectional views , taken along the section line i - i ′ of fig1 , illustrating sequential steps in two methods according to the present invention of forming scribe - line structures on a semiconductor substrate . referring to fig1 , and 5 , a lower layer 20 and a pad layer 30 are sequentially formed on a semiconductor substrate 10 . a molding layer 40 and a photoresist layer 42 are then formed so as to be sequentially stacked on the pad layer 30 . the photoresist layer 42 is formed to have at least one opening , for example the single opening 44 in fig4 and / or the two openings 44 seen in fig5 . an etching process 46 is then performed on the molding layer 40 through the one or more openings 44 using the photoresist layer 42 as an etching mask . the etching process ( represented by the arrows 46 ) forms a first protective contact hole 47 as shown in fig4 or , alternatively , first and second protective contact holes 48 as shown in fig5 , in the molding layer 40 . the first protective contact hole 47 or the first and second protective contact holes 48 are formed so as to expose the pad layer 30 . in accordance with this invention , it is desirable that the first protective contact hole 47 be formed so as to extend a trench having a predetermined width b along a scribe - line 90 as shown in fig1 . alternatively ( or , additionally ), the scribe - line 90 may be formed to have the first and second protective contact holes 48 . the first and second protective contact holes 48 are preferably formed so as to extend each of two trenches , each having a predetermined width c , along the scribe - line 90 as shown in fig1 . the first and second protective contact holes 48 ( fig5 ) or the first protective contact hole 47 ( fig4 ) may be repeatedly formed along a double ( fig5 ) or a single ( fig4 ) line 49 in a linear sequence to penetrate both the molding layer 40 and the underlying pad layer 30 . as noted above , the first protective contact hole 47 or the first and second protective contact holes 48 are formed to a suitable depth so as to expose the lower layer 20 . in some invention embodiments , the pad layer 30 may not be formed between the molding layer 40 and the lower layer 20 . in this case , the first protective contact hole 47 or the first and second protective contact holes 48 are formed to a suitable depth so as to expose the lower layer 20 through the molding layer 40 . it is desirable that the lower layer - 20 be formed by using a material having a greater mechanical intensity ( strength ) than that of either the pad layer 30 or the molding layer 40 . in one preferred embodiment , the lower layer 20 can be formed using silicon oxide ( sio 2 ). in another preferred embodiment , the molding layer 40 may be formed by using material having a lower mechanical intensity ( strength ) than that of the pad layer 30 . in one invention embodiment , the pad layer 30 can be formed by using a low - k material selected from the group consisting of black diamond , coral , aurora , and materials having dielectric constants similar thereto . in another invention embodiment , the pad layer 30 and the molding layer 40 may both be formed by using a lower - k material selected from the group consisting of nanoporous silicate , bcb , flare , alcap , lkd , and materials having dielectric constants similar thereto . the molding layer 40 may also be composed of two or more lower - k materials . in yet another embodiment , the pad layer 30 may be formed of two or more of the previously described low - k materials or of two or more of the previously described lower - k materials . after the formation of the first protective contact hole 47 and / or of the first and second protective contact holes 48 , the photoresist layer 42 is removed from the semiconductor substrate 10 by methods well known in the art . referring now to fig1 , and 7 , a portion or portions of the pad layer 30 is ( are ) exposed through the first protective contact hole 47 and / or the first and second protective contact holes 48 , a dielectric layer 65 may be formed on the exposed portions of pad layer 30 and on the molding layer 40 so as to fill the first protective contact hole 47 or the first and second protective contact holes 48 . it is often desirable that the dielectric layer 65 be formed by using a base layer 50 and a buried layer 60 which are stacked in sequence . the dielectric 65 may also be formed , however , by only using the base layer 50 or only using the buried layer 60 . the buried layer 60 and the base layer 50 are preferably formed by using a material or materials having a greater mechanical intensity ( strength ) than that of the molding layer 40 . it is also often desirable that the buried layer 60 and the base layer 50 be formed by using a low - k material selected from the group consisting of black diamond , coral , aurora , and materials having dielectric constants similar thereto . in an alternative embodiment , the base layer 50 may be formed by using a low - k material selected from the group consisting of black diamond , coral , aurora , and materials having dielectric constants similar thereto , while the buried layer 60 is formed by using a lower - k material selected from the group consisting of nanoporous silicate , bcb , flare , alcap , lkd , and materials having dielectric constants similar thereto . alternatively , the base layer 50 may be formed by using a lower - k material selected from the group consisting of nanoporous silicate , bcb , flare , alcap , lkd , and materials having dielectric constants similar thereto , while the buried layer 60 is formed by using a low - k material selected from the group consisting of black diamond , coral , aurora , and materials having dielectric constants similar thereto . the dielectric layer 65 may also be formed of two or more low - k materials . furthermore , the dielectric layer 65 may additionally be formed of two or more low - k materials and two or more lower - k materials , as described above , stacked in turn . in the case where a portion or portions of the lower layer 20 is ( are ) exposed through the first protective contact hole 47 or through the first and second protective contact holes 48 , the base layer 50 and the buried layer 60 may be formed on the exposed portions of lower layer 20 and on the molding layer 40 so as to fill the first protective contact hole 47 or the first and second protective contact holes 48 . at this time , the base layer 50 and the buried layer 60 may be formed to have top surfaces as generally indicated by dotted lines 55 and 65 , respectively , as shown in fig6 and 7 . the buried layer 60 and the base layer 50 should have a greater mechanical intensity ( strength ) than that of the molding layer 40 , so that , during performance of a cutting process on the semiconductor substrate 10 along a scribe - line 90 , physical shock to the molding layer 40 can be minimized . as a result , the base layer 50 and the buried layer 60 can reduce the number of crack occurrences during cutting along the scribe - line . furthermore , because the first and second protective contact holes 48 use the molding layer 40 as a shielding layer against physical shock in a central area of the first protective contact hole 47 , crack transference to a peripheral area of the scribe - line 90 can also be minimized . referring now to fig1 and 8 to 11 , in the case where the pad layer 30 is exposed through the first protective contact hole 47 or through the first and second protective contact holes 48 , an upper layer 70 may be formed on the dielectric layer 65 . the upper layer 70 may be conformally formed along the top surface of the dielectric layer 65 . the upper layer 70 may be formed , for example , using silicon nitride ( si 3 n 4 ). in the case where the lower layer 20 is exposed through the first protective contact hole 47 or through the first and second protective contact holes 48 , the upper layer 70 can be conformally formed to have a top surface generally indicated by dotted line 75 of fig8 or fig9 . protective layer patterns 80 may then be formed on the upper layer 70 . the protective layer patterns 80 are preferably formed so as to be spaced a distance away from each other . it is desirable that the spacing distance a between the protective layer patterns 80 ( as seen in fig1 and fig1 ) is selected so as to be different from either a contact hole width b of the first protective contact hole 47 or a contact hole width c of the first and second protective contact holes 48 . in a preferred invention embodiment , the protective layer patterns 80 are formed by using polyimide . according to the present invention described above , materials having mechanical intensity ( strength ) different from one another are formed in or along a scribe - line on a semiconductor substrate to create a scribe - line structure , so that , during performance of a cutting process on a semiconductor substrate , mechanical shock or cracking tendencies to a peripheral area of the scribe - line structure may be minimized . as a result , through the cutting process performed on the semiconductor substrate , the use of scribe - line structures according to this invention enables multiple semiconductor devices formed on the same substrate to be separated from one another and from unused semiconductor substrate while minimizing or eliminating damage to the semiconductor devices . while the present invention has been particularly shown and described with reference to exemplary embodiments thereof , it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims .