please refer to fig3 . fig3 is a perspective , exploded diagram illustrating a flat panel dmfc 20 with five serially connected basic cell units in accordance with one preferred embodiment of the present invention . it is to be understood that the flat panel dmfc 20 with five serially connected basic cell units is merely an exemplary embodiment . depending on the requirements of the applied apparatuses , other numbers of basic cell units such as ten or twenty may be used . as shown in fig3 , the present invention flat panel dmfc 20 generally comprises an integrated thin cathode electrode sheet 200 , membrane electrode assembly ( mea ) unit 300 , intermediate bonding layer 400 , integrated thin anode electrode sheet 500 , and a fuel container 600 . the integrated thin cathode electrode sheet 200 comprises a substrate 210 , cathode electrode areas 201 , 202 , 203 , 204 , and 205 , and conductive via through holes 211 , 212 , 213 , 214 , and 215 . preferably , on the surface area of the substrate 210 outside the cathode electrode areas 201 , 202 , 203 , 204 , and 205 , and the conductive via through hole 211 , 212 , 213 , 214 , and 215 , a layer of solder resist is coated thereon . at the corners of the substrate 210 , mounting through holes 221 , 222 , 223 , and 224 are provided . it is noteworthy that the integrated thin cathode electrode sheet 200 is compatible with pcb processes . the substrate 210 may be made of ansi - grade glass fiber reinforced polymeric materials such as fr - 1 , fr - 2 , fr - 3 , fr - 4 , fr - 5 , cem - 1 or cem - 3 , but not limited thereto . each of the cathode electrode areas 201 , 202 , 203 , 204 , and 205 , on which a plurality of through holes are formed , is defined by a patterned copper foil . the opening ratio of each of the cathode electrode areas 201 , 202 , 203 , 204 , and 205 , which is the ratio of the surface area of the through holes to the area of each of the cathode electrode areas , is preferably no less than 50 %. the conductive via through hole 212 is electrically connected to the cathode electrode area 201 with the conductive wire 250 . the conductive via through hole 213 is electrically connected to the cathode electrode area 202 with the conductive wire 251 . the conductive via through hole 214 is electrically connected to the cathode electrode area 203 with the conductive wire 252 . the conductive via through hole 215 is electrically connected to the cathode electrode area 204 with the conductive wire 253 . the cathode electrode area 205 is electrically connected to a positive ( cathode ) electrode node 261 , which , in operation , is further electrically connected with an external circuit . the conductive via through hole 211 , which acts as a negative ( anode ) electrode node of the dmfc 20 , is electrically connected with the external circuit in operation . the mea unit 300 comprises a first proton exchange membrane 301 , a second proton exchange membrane 302 , a third proton exchange membrane 303 , a fourth proton exchange membrane 304 , and a fifth proton exchange membrane 305 , corresponding to the cathode electrode areas 201 , 202 , 203 , 204 , and 205 . each of the proton exchange membranes 301 , 302 , 303 , 304 , and 305 may use commercially available proton conducting polymer electrolyte membranes , for example , nafion ™, but not limited thereto . the intermediate bonding layer 400 comprises at least one bonding sheet , which may be made of prepreg b - stage resin , which is an ordinary material in pcb processes . the prepreg b - stage resin may be completely cured at about 140 ° c . for process time period of about 30 minutes . corresponding to the proton exchange membranes 301 , 302 , 303 , 304 , and 305 , five openings 401 , 402 , 403 , 404 , and 405 are provided on the intermediate bonding layer 400 for fitly accommodating respective proton exchange membranes . at a side of the opening 401 corresponding to the conductive via through hole 211 of the substrate 210 , as specifically indicated in fig3 , a conductive via through hole 411 is provided . at a side of respective openings 402 , 403 , 404 , and 405 corresponding to the conductive via through holes 212 , 213 , 214 , and 215 , conductive via through holes 412 , 413 , 414 , and 415 are provided . in another case , the intermediate bonding layer 400 may further a thin supporting layer that is made of glass fiber reinforced polymeric materials such as fr - 1 , fr - 2 , fr - 3 , fr - 4 , fr - 5 , cem - 1 or cem - 3 . at the corners , corresponding to the mounting through holes 221 , 222 , 223 , and 224 of the substrate 210 , there are mounting through holes 421 , 422 , 423 , and 424 provided . the integrated thin anode electrode sheet 500 comprises a substrate 510 , anode electrode areas 501 , 502 , 503 , 504 , and 505 , and conductive - pads 511 , 512 , 513 , 514 , and 515 . it is noteworthy that the anode electrode areas 501 , 502 , 503 , 504 , 505 are defined simultaneously with the conductive - pads 511 , 512 , 513 , 514 , 515 . at the corners of the substrate 510 , corresponding to the mounting through holes 221 , 222 , 223 , and 224 of the substrate 210 , there are mounting through holes 521 , 522 , 523 , and 524 provided . the integrated thin anode electrode sheet 500 is compatible with pcb processes . likewise , the substrate 510 may be made of ansi - grade glass fiber reinforced polymeric materials such as fr - 1 , fr - 2 , fr - 3 , fr - 4 , fr - 5 , cem - 1 , cem - 3 or the like . each of the anode electrode areas 501 , 502 , 503 , 504 , and 505 , on which a plurality of through holes are formed , is defined by a patterned copper foil . the opening ratio of each of the anode electrode areas is preferably no less than 50 %. the fuel container 600 has fuel channel 601 and mounting through holes 621 , 622 , 623 , and 624 corresponding to the mounting through holes 221 , 222 , 223 , and 224 of the substrate 210 . the fuel container 600 may be made of polymeric materials such as epoxy resin , polyimide , or acrylic . the fuel channel 601 may be fabricated by using conventional mechanical grinding methods or plastic extrusion methods . when assembling , the proton exchange membranes 301 , 302 , 303 , 304 , and 305 are fitly installed within the openings 401 , 402 , 403 , 404 , and 405 of the intermediate bonding layer 400 . the intermediate bonding layer 400 , together with the installed proton exchange membranes 301 , 302 , 303 , 304 , and 305 , is then sandwiched by the integrated thin cathode electrode sheet 200 and the integrated thin anode electrode sheet 500 . the resultant laminate stack consisting in the order of the integrated thin cathode electrode sheet 200 , intermediate bonding layer 400 ( and installed proton exchange membranes ), and the integrated thin anode electrode sheet 500 is then mounted on the fuel container 600 . the conductive via through holes 211 , 212 , 213 , 214 and 215 of the integrated thin cathode electrode sheet 200 are aligned , and in contact , with the respective conductive via through holes 411 , 412 , 413 , 414 and 415 of the intermediate bonding layer 400 , which are aligned with the conductive pads 511 , 512 , 513 , 514 and 515 of the integrated thin anode electrode sheet 500 . conventional soldering process may be used to electrically connected and fix the aligned conductive through holes such as conductive via through holes 211 , 411 , and conductive pad 511 , and so on . by doing this , the cathode electrode area 201 of the integrated thin cathode electrode sheet 200 is electrically connected to the anode electrode area 502 of the integrated thin anode electrode sheet 500 through the conductive path constituted by the conductive wire 250 , the soldered conductive via through holes 212 and 412 , and the conductive pad 512 of the integrated thin anode electrode sheet 500 . the cathode electrode area 202 of the integrated thin cathode electrode sheet 200 is electrically connected to the anode electrode area 503 of the integrated thin anode electrode sheet 500 through the conductive path constituted by the conductive wire 251 , the soldered conductive via through holes 213 and 413 , and the conductive pad 513 of the integrated thin anode electrode sheet 500 , and so on . the conductive via through hole 211 of the integrated thin cathode electrode sheet 200 , which acts as the negative electrode of the dmfc 20 , is electrically connected to the anode electrode area 501 of the integrated thin anode electrode sheet 500 through the conductive via through hole 411 of the intermediate bonding layer 400 . it is advantageous to use the present invention because the dmfc 20 has integrated thin cathode electrode sheet 200 and integrated thin anode electrode sheet 500 , which reduce the thickness as well as the production cost of the dmfc 20 . no bended bipolar wire lath is needed . the integrated thin cathode electrode sheet 200 and integrated thin anode electrode sheet 500 are compatible with pcb processes , thus can achieve the scale of mass production . another benefit is that the control circuit layout for controlling the dmfc and external circuit can be integrated on the substrate 210 or 510 . a method for fabricating integrated thin cathode electrode sheet 200 and integrated thin anode electrode sheet 500 of the dmfc 20 is now described in detail with reference to fig4 to fig1 . according to this invention , the method for fabricating integrated thin cathode electrode sheet 200 and integrated thin anode electrode sheet 500 of the dmfc 20 is compatible with standard pcb processes . first , as shown in fig4 , a ccl ( copper clad laminate ) substrate 30 is provided . the ccl substrate 30 is commercially available and has a thickness of few millimeters . the ccl substrate 30 comprises a base layer 32 , a copper layer 34 laminated on an upper surface of the base layer 32 , and a copper layer 36 laminated on a lower surface of the base layer 32 . as shown in fig5 , a conventional drilling process is carried out to drill a plurality of through holes 42 in the ccl substrate 30 within pre - selected electrode areas 49 . in accordance with the preferred embodiment , the surface area of the through holes 42 within a pre - selected electrode area is preferably more than 50 % of the surface area of the pre - selected electrode area . subsequently , as shown in fig6 , a thin copper layer 46 is chemically deposited on the ccl substrate 30 and on the exposed interior sidewalls of the through holes 42 . it is noted that the copper layer 46 is deposited in a non - selective manner . as shown in fig7 , a patterned resist ( dry film ) 48 is formed on the ccl substrate 30 to expose the pre - selected electrode areas 49 . taking the integrated cathode electrode sheet 200 of fig3 as an example , the pre - selected electrode areas 49 defined by the patterned resist 48 is one of the cathode electrode areas 201 ˜ 205 . not shown in fig7 , the patterned resist 48 also defines the conductive wires 250 ˜ 254 and the positive electrode node 261 . it is noted that the conductive via through holes 211 ˜ 215 of the integrated cathode electrode sheet 200 are formed simultaneously with the through holes 42 in the same drilling process . taking the integrated anode electrode sheet 500 of fig3 as an example , the pre - selected electrode areas 49 defined by the patterned resist 48 is one of the anode electrode areas 501 ˜ 505 , and the patterned resist 48 also defines the conductive pads 511 ˜ 515 ( not shown in fig7 ). as shown in fig8 , using the patterned resist 48 as a plating mask , an electroplating process is carried out to form a copper layer 62 on the ccl substrate 30 where is not covered by the patterned resist 48 including the pre - selected electrode areas 49 . a tin / lead ( sn / pb ) composite layer 64 is then electroplated on the copper layer 62 . as shown in fig9 , the patterned resist 48 is stripped to expose the rest of the copper layer 46 . as shown in fig1 , a copper etching process such as conventional wet etching is then carried out to etch away the copper layer 46 and the copper layers 34 and 36 that are not covered by the sn / pb layer 64 . after this , another etching process is carried out to etch away the sn / pb layer 64 , thereby exposing the remaining copper layer 62 . at this stage , the fabrication of the integrated anode electrode sheet 500 of fig3 is complete . to complete the fabrication of the integrated cathode electrode sheet 200 of fig3 , there are still few steps to go . as shown in fig1 , to prevent short - circuiting caused during the subsequent soldering process and potential damages to the substrate , a solder resist layer 72 is coated . the solder resist layer 72 may be made of materials that are commercially available and are commonly used in conventional pcb processes . preferably , the solder resist layer 72 is made of photosensitive materials that can be patterned by using conventional lithographic process to define the protected area on the electrode sheet 200 . as shown in fig1 , optionally , to further protect the integrated cathode electrode sheet 200 from oxidation due to long - term contact with air , a conductive protection layer 74 is coated on the electrode . the conductive protection layer 74 may be made of nickel / gold ( ni / au ), tin / lead ( sn / pb ), or chemical silver . to sum up , the present invention flat panel type dmfc encompasses at least the following advantages . the cost per cell is reduced since the starting material , ccl substrate , is cheaper . besides , the process of fabricating the germane parts , the integrated thin cathode electrode sheet 200 and integrated thin anode electrode sheet 500 of the dmfc 20 , is compatible with mature pcb processes . the process of fabricating the germane parts , the integrated thin cathode electrode sheet 200 and integrated thin anode electrode sheet 500 of the dmfc 20 , is compatible with mature pcb process . the production cost is therefore reduced . no bended bipolar wire lath is needed . the manufacture of the integrated thin cathode electrode sheet 200 and integrated thin anode electrode sheet 500 can therefore achieve the scale of mass production . direct stack assembly is more precise . the control circuit layout for controlling the lithium battery of portable apparatus , the dmfc and the external circuit can be simultaneously fabricated on the laminate substrate , thus reducing the size of the dmfc and increasing the integrity of the dmfc . those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention . accordingly , the above disclosure should be construed as limited only by the metes and bounds of the appended claims .