[ 0011 ] fig3 illustrates an embodiment of the present invention , where the source and drains of nmosfets 302 and 304 are connected to each other , and are connected to the drain of nmosfet 306 . nmosfet 306 has its gate connected to its drain , and has its source connected to ground ( substrate potential ). gates 308 and 310 of nmosfets 302 and 304 comprise the two terminals of the resulting capacitor . because in normal operation dc ( direct current ) is not conducted via gates 308 and 310 , the dc bias current through nmosfet 306 is zero . consequently , the gate - to - source potential difference of nmosfet 306 is zero , and nmosfet 306 is off . as a result , the circuit of fig3 does not consume dc power , and the impedance between gates 308 and 310 is capacitive . the potential difference between gates 308 and 310 need not necessarily be at the threshold voltage of the nmosfets in order for the channels of pmosfets 302 and 304 to be in inversion . this is observed by noting that when the gate - to - source potential difference for both nmosfets 302 and 304 equals the threshold voltage , the potential difference between gates 308 and 310 is zero . for the miller compensated output stage of opamp 202 in fig2 the gate potential of nmosfet 206 and the output potential of output port 212 may both be about 0 . 9 volts , and consequently the embodiment capacitor of fig3 may be used for capacitor 208 of fig2 because 0 . 9 volts is higher that the threshold voltage for may typical nmos devices . other embodiments may utilize pmosfets rather than nmosfets . for example , in fig4 pmosfets 402 and 404 have their sources and drains connected to each other and to the drain of pmosfet 406 , where the gate and drain of pmosfet 406 are connected to each other . gates 408 and 410 comprise the two terminals of the resulting capacitor . in other embodiments , bias transistor 306 or bias transistor 406 may be realized by a bipolar transistor . for example , in fig5 nmosfets 502 and 504 have their sources and drains connected to the collector of npn transistor 506 , where the base and collector of npn transistor 506 are connected to each other . gates 506 and 508 comprise the terminals of the resulting capacitor . as another example , in fig6 pmosfets 602 and 604 have their sources and drains connected to the collector of pnp transistor 606 , where the base and collector of pnp transistor 606 are connected to each other . gates 608 and 610 comprise the terminals of the resulting capacitor . accordingly , variations and modifications to the disclosed embodiments may be realized without departing from the scope of the invention as claimed below .