while the making and using of various embodiments of the present invention are discussed in detail below , it should be appreciated that the present invention provides many applicable inventive concepts , which can be embodied in a wide variety of specific contexts . the specific embodiments discussed herein are merely illustrative of specific ways to make and use the invention and do not limit the scope of the invention . the present invention provides a versatile system for producing high - precision mos device structures in which straight regions dominate the device &# 39 ; s behavior , providing minimum geometry devices that precisely match large devices , in an easy , efficient and cost - effective manner . more specifically , the present invention provides a system for producing mos device geometries in which straight regions dominate device behavior by use of only straight and concave geometries in the double - diffused region mask opening . this system renders extremely efficient matched pair design practical in a number of high - volume technologies . referring now to fig3 , the dopant diffusion for a concave dwell region 300 , illustrating certain aspects of the present invention , is depicted . geometry 300 has straight regions 302 and concave regions 304 . regions 302 dominate device behavior , providing for a minimum geometry device to be matched precisely to a large device utilizing only straight 302 and concave geometries 304 in the double - diffused region mask opening 306 . as dopants diffuse 308 from the dwell mask opening 306 into the region masked during dwell implant , their concentration is increased relative to that of a straight region 302 . in accordance with the present invention , producing a dmos transistor with only straight 302 and concave 310 regions renders a device having electrical properties dominated , substantially or completely , by the properties of straight regions 302 . the present invention is now described in greater detail , beginning in reference with fig4 . a device 400 comprises a dwell region 402 within an active area 404 . region 402 is substantially straight . a channel - stop implant may be utilized to prevent leakage or punch - through in end cap regions 406 outside the moat 404 ( i . e ., under field oxide 408 ). source 410 and drain 412 contacts are also shown . one geometry for a gate 414 is also shown . for a given moat size , active width of device 400 in this particular embodiment is greater than that of the conventional geometry previously illustrated in prior art fig1 . in particular , a minimum - sized dmos transistor , for a given electrical width , can be drawn smaller using this embodiment because the end caps 406 can be placed in the field oxide region 408 ( which serves as a moat - moat isolator ), rather than on the moat 404 . note that the geometry of source and drain contacts , the gate and the moat are drawn for illustrative purposes only — alternative layouts and geometries may be used in accordance with the present invention . this embodiment achieves the desired characteristics through provision of a dwell 402 that is straight where it intersects moat 404 , and providing end caps 406 in field oxide region 408 — effectively inactivating them . reference is now made to fig5 , in which another device geometry 500 in accordance with the present invention is depicted . geometry 500 implements a configuration having flared end caps 502 for dwell 504 ( as defined by a double - diffused region mask opening ). the provision of the flared end caps 502 effectively increases doping concentration there . this , in effect , turns off regions 506 near moat edges 508 — reducing the effects of certain process sensitivities ( e . g ., oxide thinning , doping variations , stress ) in those areas . with this approach , dwell doping at corners 510 , in the region under field oxide 512 , is reduced . this is tolerable , however , due to the increase in v t resulting from thick oxide . in this embodiment , flared regions 502 are provided utilizing some degree of concavity in regions 514 — the perimeter portions of dwell 504 lying within moat 516 . the concavity of regions 514 marginally increases the active width of the device , but this topology is still more compact other , more conventional approaches . with this embodiment , the length of end caps 502 may be optimized to the minimum required to inactivate bird &# 39 ; s beak effects and alignment tolerances — resulting in a much smaller footprint than those of the end caps in previous embodiments . in another embodiment of the present invention , illustrated in fig6 , a dmos device geometry 600 is depicted . in device 600 , straight regions dominate device behavior without allowing a double diffused region boundary 602 to cross a moat - to - field oxide boundary 604 . the presence of dwell boundary 602 within field oxide 608 may require p - type channel - stop 610 to prevent leakage or punch - through . in this embodiment , source contacts 612 and drain contacts 614 are switched , in comparison to previous embodiments . backgate contact can therefore , advantageously , be made on larger moat region 616 . furthermore , because the dwell 618 of the present embodiment has a smaller inner span and radius , it is more compact than conventional geometries . end caps 620 may also be closer to the moat edge 622 , since its v t is lower . thus , end caps 620 are less active . referring now to fig7 , another embodiment of the present invention provides for dmos device geometry 700 . in device 700 , straight regions 702 dominate device behavior by virtue of p - type implant 704 added to end cap regions 706 before poly deposition . implant 704 is preferably added after the most diffusive process steps , so that its profile is concentrated and localized . peak dwell doping ( e . g ., boron ) in end caps 706 is thus enhanced , raising v t for the end caps above that of straight sections 702 — effectively deactivating the end caps . dwell 708 ( e . g ., arsenic ) is not entirely compensated , due to the moderate doping concentration and depth of implant 704 , but this is a secondary consideration if the v t is increased . this embodiment is applicable to any field - effect device in which a laterally diffused channel sets v t . thus , a diffused transistor , self - aligned to poly , may be realized by using geometry 700 on , for example , a poly mask shape . in a further realization of the present invention , illustrated in fig8 , device geometry 800 has straight regions 802 that dominate device behavior by placement of psd back - gate contact 804 in the interior of end cap regions 806 . this arrangement counter - dopes dwell 808 , and interrupts the source for the end caps 806 . however , dwell material ( e . g ., arsenic ) generally diffuses laterally much farther than psd 804 . this is usually due to at least two factors . first , in most production processes , thermal budget for dwell material is generally greater , and in some cases much greater , than for psd material . second , most processes will require some offset 810 ( e . g ., ˜ 0 . 2μ ) between the dwell mask 808 and poly mask 812 , to provide alignment tolerance , and further masking provided by a sidewall spacer 818 ( e . g ., ˜ 0 . 2μ ) instantiated around the perimeter of dwell 808 . thus , the present invention provides a number of versatile devices and geometries for optimizing average electrical properties independent of device electrical width . hence , effective matching of large and small devices , useful in a number of applications ( e . g ., a high - ratio current mirror circuit ), is provided . furthermore , because large and small transistors may be laid out such that their active areas are similar , matched pairs according to the present invention are less susceptible to process variations . the present invention is useful in numerous analog technologies , and is of particular benefit to those that contain matched dmos transistors . the embodiments and examples set forth herein are presented to best explain the present invention and its practical application and to thereby enable those skilled in the art to make and utilize the invention . however , those skilled in the art will recognize that the foregoing description and examples have been presented for the purpose of illustration and example only . the description as set forth is not intended to be exhaustive or to limit the invention to the precise form disclosed . many modifications and variations are possible in light of the above teaching without departing from the spirit and scope of the following claims .