by way of an example , the process may start with an n type substrate 10 ( see fig1 ) of arsenic doped silicon of less than 0 . 005 ohm - cm resistivity with crystal orientation of & lt ; 1 - 0 - 0 & gt ;. the substrate is preferably capped as taught in application ser . no . 08 / 015 , 384 referred to above . a n - silicon epitaxial layer is grown ( in a vapor deposition reactor chamber ) over the substrate . in this epi layer three regions are grown with misfit dislocations . the placement of the regions is such that when processing is finished , these misfit dislocation regions end up in or close to the depletion region , which is a fully reverse biased p - n junction . each misfit dislocation region consists of two 2 micron thick layers of silicon with 3 % germanium , separated by a 2 micron layer of silicon with no germanium ( see fig2 ). two layers of two microns thick silicon sub layers are deposited on top of the second sige layer . more particularly , above capped surface 12 of substrate 10 the epitaxial layer is grown . after the device is finished the epitaxial layer will include an n ++ out diffusion buffer region 14 . a p + diffused region 18 is diffused into this epitaxial layer to create a p - n junction 20 . if this p - n junction is reverse biased , a depletion region 16 will sustain the bias voltage . depletion region 16 will contain n - type silicon with regions 22 , 24 and 26 separated by regions 28 , 30 and 32 containing misfit dislocations . each of the misfit dislocation regions 28 , 30 and 32 are preferably formed of five layers each approximately 2 microns thick . a typical region 28 , 30 and 32 including misfit dislocations is illustrated in fig2 . with the temperature of the cvd reactor chamber lowered 50 ° c . to 1050 ° c ., a first germanium containing layer 34 ( si / ge ) of approximately 3 % germanium is grown . it is approximately 2 microns thick . next a 4 min . hydrogen purge is performed to clean the gas in the chamber . a first substantially germanium free silicon layer 36 is then grown over layer 34 . layer 36 is also approximately 2 microns thick . on top of layer 36 a second germanium containing layer 318 is grown ( si / ge ) which is similar to layer 34 in composition and thickness . after this another purge . during this purge the temperature is raised to 1100 ° c . above layer 38 another substantially germanium free layer 40 is grown . then another purge and another substantially germanium free layer 42 . silicon sublayers 40 and 42 , each are approximately two microns thick . finally a gas etch etches away a part of layer 42 and another 4 min . hydrogen purge removes the etching gases . each multi - layer region of misfit dislocations has a thickness of approximately 10 microns . the regions are spaced apart by n - silicon regions 24 and 26 of approximately 13 microns thickness . adjacent the surface of region 32 of misfit dislocations is grown an approximately 45 micron thick silicon buffer . a portion of the buffer will be diffused with a p type impurity to form a p + type region 18 with a p / n junction 20 . the regions of misfit dislocations are preferably proximate to junction 20 . fig3 shows the case where the misfit dislocation regions 28 and 30 are situated just outside the depletion region 16 . the misfit dislocation regions are the same as earlier described and shown in fig2 however preferably with one two or more ge doped layers . the advantage of this system is found primarily the leakage current ir and to a lesser extent to the forward voltage drop vf . hole - electron generation in the depletion layer is by far the largest component of the ir . diffusing metallic impurities all through the wafer to lower the minority carrier lifetime ( as is currently the standard manner of achieving this ) is known to increase the ir because the generation component of ir is evenly proportional to the lifetime . if the τ in the depletion region is large , ir is small . if τ just outside the depletion region is small , the recombination there will diminish the charge in the space charge region when the rectifier is forward biased , which will result in a faster switching time . the misfit dislocations in this case must have more regions or more germanium in each 2μ region or more gold or / and pt to achieve the same switching time as in the case of fig1 . in some cases only one of the misfit dislocation regions might be the preferred embodiment . a similar reasoning is in special cases true for the spare charge region . as noted above , increasing the switching speed of silicon devices has been conventionally accomplished by the introduction of heavy metallic impurities , which tend to reduce minority carrier lifetime and therefore result in devices with a shorter recovery time but with a higher ir due to the metallic impurities such as gold and platinum which have been used . in a special case of the present invention , misfit dislocations as well as metal diffusion are employed to enhance the switching speed in devices such as power rectifiers . the misfit dislocations serve as getter cites of the metallic impurities . the metallic impurities are diffused all through the silicon and end up into the misfit dislocation regions as the regions are formed and remain in those regions in relatively large concentrations , as compared to the surface and remainder of the depletion region . the source of these metallic impurities can be a gold doped wafer in the vapor deposition reactor chamber . we have found that maximum results are obtained by simultaneously diffusing gold and platinum impurities into the misfit dislocation regions after the regions are formed . this can be achieved with a gold and platinum filmtronic spin - on used as a metallic dopant . it is believed that , because the metals have different activation energies , different and distant trap energies are present . diffusion of the gold and platinum at 810 ° c . for 60 minutes has resulted in power rectifiers with a switching time in the 25 - 30 nano second range . it should now be appreciated that the present invention is a practical application of misfit dislocation techniques . the misfit dislocations are associated with deep energy levels in the energy gap of silicon . misfit dislocations act as localized lifetime killers . the employment of such misfit dislocations is a controllable , clean technique for increasing switching speed of power rectifiers and reducing the minority carrier lifetime of multilayer devices . in addition , misfit dislocations are effective gettering sites for metallic impurities . small amounts of gold and platinum can easily be incorporated into the region of misfit dislocations , leaving the remaining silicon layers with minimal metallic impurity precipitates . while only a single embodiment of the present invention has been disclosed for purposes of illustration , it is obvious that many variations and modifications could be made thereto . it is intended to cover all of these variations and modifications which fall within the scope of the present invention , as defined by the following claims :