the present invention includes methods and schematics to achieve multi - bit reading in a single semiconductor nvm cell . those of ordinary skill in the art will immediately realize that the embodiments of the present invention described herein in the context of methods and schematics are illustrative only and are not intended to be in any way limiting . other embodiments of the present invention will readily suggest themselves to such skilled persons having the benefits of this disclosure . fig4 shows an embodiment of four groups of threshold voltage distribution assigned to ( 11 ), ( 10 ), ( 01 ) and ( 00 ), and two applied gate voltage v a0 and v a1 for a 2 - bit per cell mlc nvm flash ( p = 4 , n = 2 , and m = 2 ). the schematic diagram is shown in fig5 , where two bit data buffers 510 and 512 are represented by q 0 and q 1 , i . e ., ( q 0 q 1 ) for the four threshold voltage groups . the data buffers 510 and 512 are written by bit datum from a status register 580 using a digital value to represent the two states of applied gate voltages and the result of level comparator 554 to identify the state of nvm cell 570 responding currents , respectively . gate switches 520 and 522 for passing the one bit of applied gate - voltage status register data and one bit of level comparator result to the data buffers 510 and 512 are turned on by the logic condition that the nvm cells &# 39 ; response currents to the applied gate voltage v aj is within the range of the low bound reference r lb and the high bound reference r hb . the values of the applied gate voltage status register 580 are given by “ 1 ” for applying gate voltage v a0 and “ 0 ” for applying gate voltage v a1 , respectively . the level comparator 554 compares the nvm cells &# 39 ; response currents to an applied gate voltage v aj with a level reference current r l . the level comparator 554 is designed to output “ high ” ( logic “ 1 ”) and “ low ” ( logic “ 0 ”) for the cells &# 39 ; response currents greater and lower than the level reference current r l , respectively . the low bound comparator 550 is designed to output “ high ” ( logic “ 1 ”) for cells &# 39 ; response currents greater than the low bound reference current r lb and the high bound comparator 552 is designed to output “ high ” ( logic “ 1 ”) for cells &# 39 ; response currents less than the high bound reference current r hb . the output signals of the low bound comparator 550 and the high bound comparator 552 are fed into a logic “ and ” gate 530 to control the gate switches 520 and 522 . when the nvm response cell currents to an applied gate voltage v aj is in the range of the low bound reference current r lb and the high bound reference current r hb , the and gate 530 switches “ on ” the gate switches 520 and 522 . the read sequence first applies gate voltage v a0 to the gates of nvm cells 570 and the value of the status register 580 is “ 1 ”. since the response currents for the group of nvm threshold voltages ( 11 ) to the applied voltage v a0 are between the low and high bound reference currents and larger than the level reference current r l , q 0 obtains the digital value “ 1 ” from the status register 580 and q 1 obtains the digital value “ 1 ” from the output “ 1 ” of the level comparator 554 . since the response currents for the group of nvm threshold voltages ( 10 ) to the applied voltage v a0 are between the low and high bound reference currents and less than the level reference current r l , q 0 obtains the digital value “ 1 ” from the status register 580 and q 1 obtains the digital value “ 0 ” from the output of the level comparator 554 . since the response currents to the applied voltage v a0 for the groups of nvm threshold voltages ( 01 ) and ( 00 ) are less than the low bound reference current r lb , the gate switches 520 and 522 are “ off ”, and the outputs of the level comparator 554 and the status register 580 are not written into q 0 and q 1 . upon applying the second gate voltage v a1 with the status register value “ 0 ”, the response currents to the applied voltage v a1 for the groups of nvm threshold voltages ( 11 ) and ( 01 ) are greater than the high bound reference current r hb . the gate switches 520 and 522 are “ off ”, and the status register 580 value (“ 0 ”) and the output “ 1 ” of the level comparator 554 cannot be over - written into q 0 and q 1 . q 0 and q 1 for groups ( 11 ) and ( 01 ) retain their previous values . for the group of nvm threshold voltages ( 01 ) the response currents to the applied voltage v a1 are between the low and high bound reference currents and larger than the level reference current r l . since the gate switches 520 and 522 for the group ( 01 ) are switched “ on ”, q 0 writes the digital value “ 0 ” from the status register 580 and q 1 writes the digital value “ 1 ” from the output “ 1 ” of the level comparator 554 . for the group of nvm threshold voltages ( 00 ), the response currents to the applied voltage v a1 are between the low and high bound reference currents and less than the level reference current r l . the gate switches 520 and 522 are switched “ on ” for the group ( 00 ). q 0 writes the digital value “ 0 ” from the status register 580 and q 1 writes the digital value “ 0 ” from the output “ 0 ” of the level comparator 554 . after applying two gate voltages v a0 and v a1 for the 2 - bit per cell mlc nvm flash , the read sequence is completed . the data buffers 510 and 512 correctly present the storing bits in the probed mlc nvm cells . fig6 shows an embodiment of eight groups of threshold voltage distribution assigned to ( 111 ), ( 110 ), ( 101 ), ( 100 ), ( 011 ), ( 010 ), ( 001 ), and ( 000 ) and two applied gate voltage v a0 and v a1 for a 3 - bit per cell mlc nvm flash ( p = 8 , n = 2 , and m = 4 ). the schematic diagram is shown in fig7 , where three bit data buffers 710 , 712 , and 714 are represented by q 0 , q 1 , q 2 , i . e ., ( q 0 q 1 q 2 ) for the eight threshold voltage groups . the data buffers 710 , 712 and 714 are written by bit datum from the output node 781 of a one - bit status register 780 representing the two states of two applied gate voltages v aj , and from the two - bit output nodes 731 and 732 of three level comparators 754 , 756 , and 758 . gate switches 720 , 722 , and 724 for passing the status register data and the two - bit outputs at the two - bit output nodes 731 and 732 of level comparators 754 , 756 , and 758 , to the data buffers 710 , 712 , and 714 are turned on by the logic condition that the nvm cells &# 39 ; response currents to an applied gate voltage are in the range of the low bound reference current r lb and the high bound reference current r hb . the value of the applied gate voltage status register 780 is given by “ 1 ” for applying gate voltage v a0 and “ 0 ” for applying gate voltage v a1 , respectively . three level comparators 754 , 756 , and 758 compares the nvm cells &# 39 ; response currents to an applied gate voltage v aj with three level reference currents , r l0 , r l1 , and r l2 , where r l0 & gt ; r l1 & gt ; r l2 . the level comparators 754 , 756 , and 758 are designed to output “ high ” ( logic “ 1 ”) when the cells &# 39 ; response currents are greater than the level reference currents and vice versa . according to the output signals of the level comparator 754 , one of the output signals at the output nodes 741 and 742 of two level comparators 756 and 758 is passed to the input node 732 of gate switch 724 . if the threshold voltages of the nvm cells belong to the smaller threshold voltages groups ( response currents larger than r l1 ), the output signal of level comparator 756 is passed to the input node 732 of switch 724 . the output signal of level comparator 758 is passed to the input node 732 of the switch 724 for the larger threshold voltage groups of the nvm cells ( response currents less than r l1 ). the low bound comparator 750 is designed to output “ high ” ( logic “ 1 ”) for cells &# 39 ; response currents greater than the low bound reference current r lb and the high bound comparator 752 is designed to output “ high ” ( logic “ 1 ”) for cells &# 39 ; response current less than the high bound reference current r hb . the output signals of the low bound comparator 750 and the high bound comparator 752 are fed into a logic “ and ” gate 730 to control the gate switches 720 , 722 and 724 . when the responding nvm cell currents to an applied gate voltage are in the range of the low bound reference current r lb and the high bound reference current r hb , the and gate 730 switches “ on ” the gate switches 720 , 722 , and 724 . the read sequence first applies gate voltage v a0 to the gates of nvm cells 770 and the value of the status register 780 is “ 1 ”. since the responding currents for the target groups ( 111 ), ( 110 ), ( 101 ), and ( 100 ) of nvm threshold voltages to the applied voltage v a0 are between the low and high bound reference currents , the switches 720 , 722 , and 724 for passing the bit datum to q 0 , q 1 and q 2 are turned “ on ” only for the target groups ( 111 ), ( 110 ), ( 101 ), and ( 100 ). q 0 obtains the digital value “ 1 ” from the one bit applied gate - voltage status register 780 . the data buffer q 1 obtains either “ 1 ” or “ 0 ” from the output signals of level comparators 756 with reference current r l0 for threshold voltage groups ( 11x ) and ( 10x ), respectively , where x indicates either “ 1 ” or “ 0 ”. meanwhile at this applied voltage v a0 , the output signals of the level comparators 756 with reference current r l0 are “ 1 ” for group ( 111 ) and “ 0 ” for all other groups . the output signals of the level comparators 758 with reference r l2 are “ 1 ” for groups ( 111 ), ( 110 ), and ( 101 ), and “ 0 ” for all the other groups . the data buffer q 2 obtains the digital value either from the output node 741 of the level comparators 756 , when the level comparator 754 generates an output value “ 1 ”, or from the output node 742 of the level comparator 758 , when the level comparator 754 generates an output value “ 0 ”, respectively . in the end , the data buffers q 1 and q 2 are written with “ 1 ” and “ 1 ” for group ( 111 ), “ 1 ” and “ 0 ” for group ( 110 ), “ 0 ” and “ 1 ” for group ( 101 ), and “ 0 ” and “ 0 ” for group ( 100 ). for nvm threshold voltage groups ( 0xx ) with the applied gate voltage v a0 , the outputs of three level comparators 754 , 756 , 758 are “ 0s ”. since the responding currents for nvm threshold voltage groups ( 0xx ) with the applied gate voltage v a0 are smaller than the lower bound reference currents r lb , the switches 720 , 722 , and 724 are “ off ” to prevent passing the applied gate - voltage status bit and the output signals of level comparators 754 , 756 , and 758 to the data buffers q 0 , q 1 and q 2 . upon applying the second gate voltage v a1 with the status register 780 having a value “ 0 ”, the response currents to the applied voltage v a1 for the groups ( 111 ), ( 110 ), ( 101 ), and ( 100 ) of nvm threshold voltages are greater than the high bound reference current r hb . the gate switches 720 , 722 , and 724 are “ off ” and no datum can be over - written into q 0 , q 1 , and q 2 . the buffers q 0 , q 1 , and q 2 for the groups ( 111 ), ( 110 ), ( 101 ), and ( 100 ) of nvm threshold voltages retain their previous values at this applied gate voltage stage . since for the target groups ( 011 ), ( 010 ), ( 001 ), and ( 000 ) of nvm threshold voltages the response currents to the applied voltage v a1 are between the low bound reference current r lb and high bound reference current r hb , the gate switches 720 , 722 , and 724 are “ on ” and ready to pass the status register bit “ 0 ” and the output signals of level comparators 754 , 756 , 758 into buffers q 0 , q 1 , and q 2 . q 0 is written to “ 0 ” by the bit in the status register 780 for applying gate voltage v a1 . q 1 is written by the data from the output of level comparator 754 . q 2 is written either from the output node 741 of level comparator 756 , when the level comparator 754 generates an output value “ 1 ” or from the output node 742 of level comparator 758 , when the level comparator 754 generates an output value “ 0 ”, respectively . in the end , the values of q 0 , q 1 , and q 2 are “ 0 ”, “ 1 ”, and “ 1 ” for the group of nvm cell threshold voltages ( 011 ); the values of q 0 , q 1 , and q 2 are “ 0 ”, “ 1 ”, and “ 0 ” for the group of nvm cell threshold voltages ( 010 ); the values of q 0 , q 1 , and q 2 are “ 0 ”, “ 0 ”, and “ 1 ” for the group of nvm cell threshold voltages ( 001 ); the values of q 0 , q 1 , and q 2 are “ 0 ”, “ 0 ”, and “ 0 ” for the group of nvm cell threshold voltages ( 000 ). after applying two gate voltages v a0 and v a1 for the 3 - bit per cell mlc nvm flash the read sequence is completed . the data buffers 710 , 712 and 714 correctly present the storing bits in the probed mlc nvm cells . in one embodiment of 3 - bit per mlc nvm design , the time required to sense and determine the response current levels of nvm cells 770 for an applied gate voltage is about 30 nanoseconds . thus , the total time to read out the 3 - bit per mlc nvm is around 60 nanoseconds . fig8 shows an embodiment of a 4 - bit per cell mlc nvm flash ( p = 16 , n = 4 , and m = 4 ) of sixteen groups of threshold voltage distribution assigned to ( 1111 ), ( 1100 ), ( 1101 ), and ( 1110 ) for applied gate voltage v a0 ; ( 1011 ), ( 1000 ), ( 1001 ), and ( 1010 ) for applied gate voltage v a1 ; ( 0111 ), ( 0100 ), ( 0101 ), and ( 0110 ) for applied gate voltage v a2 ; ( 0011 ), ( 0010 ), ( 0001 ), ( 0000 ) for applied gate voltage v a3 . the schematic diagram is shown in fig9 , where four bit data buffers 910 , 912 , 914 , and 916 are represented by q 0 , q 1 , q 2 , and q 3 , i . e ., ( q 0 q 1 q 2 q 3 ) for the sixteen threshold voltage groups . the data buffers 910 , 912 , 914 and 916 are written by bit datum from the two - bit output nodes 981 and 982 of a two - bit status register 980 representing the four states of the four applied gate voltages v aj , and from the two - bit output nodes 931 and 932 of three level comparators 954 , 956 , and 958 . gate switches 920 , 922 , 924 , and 926 for passing the two - bit status register datum and the two - bit data at the output nodes 931 and 932 of level comparators 954 , 956 , and 958 , to the data buffers 910 , 912 , 914 , and 916 are turned on by the logic condition that the cells &# 39 ; response currents to an applied gate voltage v aj are in the range of the low bound reference current r lb and the high bound reference current r hb . the value of the applied gate voltage status register 980 is given by “ 11 ” for applying gate voltage v a0 , “ 10 ” for applying gate voltage v a1 , “ 01 ” for applying gate voltage v a2 , and “ 00 ” for applying gate voltage v a2 . three level comparators 954 , 956 , and 958 compares the cells &# 39 ; response currents to an applied gate voltage with three level reference currents , r l0 , r l1 , and r l2 , where r l0 & gt ; r l1 & gt ; r l2 . the level comparators 954 , 956 , and 958 are designed to output “ high ” ( logic “ 1 ”) when the cells &# 39 ; response currents are greater than the level reference currents and vice versa . according to the output signals of the level comparator 954 , the output signal at either the node 941 or the node 942 is passed to the input node 932 of gate switch 926 . if the threshold voltages of the nvm cells 970 belong to the smaller threshold voltages groups ( response currents larger than r l1 ), the output signal at the node 941 of the level comparator 956 is passed to the input node 932 of switch 926 . while the output signal at the node 942 of level comparator 958 is passed to the input node 932 of the switch 926 for the larger threshold voltage groups of the nvm cells ( response currents less than r l1 ). the low bound comparator 950 is designed to output “ high ” ( logic “ 1 ”) for cells &# 39 ; response current greater than the low bound reference current r lb and the high bound comparator 952 is designed to output “ high ” ( logic “ 1 ”) for cells &# 39 ; response current less than the high bound reference current r hb . the output signals of the low bound comparator 950 and the high bound comparator 952 are fed into a logic “ and ” gate 930 to control the gate switches 920 , 922 , 924 and 926 . when the response nvm cell currents to an applied gate voltage is in the range of the low bound reference current r lb and the high bound reference current r hb , the and gate 930 switches “ on ” the gate switches 920 , 922 , 924 , and 926 . the read sequence first applies gate voltage v a0 to the gates of nvm cells 970 and the value of the status register 980 is “ 11 ”. since the response currents for the target groups ( 1111 ), ( 1110 ), ( 1101 ), and ( 1100 ) of nvm threshold voltages to the applied voltage v a0 are between the low and high bound reference currents , the switches 920 , 922 , 924 , and 926 for passing the bit datum to q 0 , q 1 , q 2 and q 3 are turned “ on ” only for the groups ( 1111 ), ( 1110 ), ( 1101 ), and ( 1100 ). q 0 and q 1 write the digital value “ 11 ” from the two - bit applied gate - voltage status register 980 . the data buffer q 2 obtains either “ 1 ” or “ 0 ” from the output signals of level comparators 954 with reference current r l1 for threshold voltage groups ( 111x ) and ( 110x ), respectively , where x indicates either “ 1 ” or “ 0 ”. meanwhile at this applied voltage v a0 the output signals of the level comparators 956 are “ 1 ” for group ( 1111 ) and “ 0 ” for all other groups . the output signals of the level comparators 958 are “ 1 ” for groups ( 1111 ), ( 1110 ), and ( 1101 ), and “ 0 ” for all other groups . the data buffer q 3 obtains the digital value either from the output signals of level comparators 956 , when level comparator 954 generates an output value “ 1 ”, or from the output signal of level comparator 958 , when level comparator 954 generates an output value “ 0 ”, respectively . finally the data buffers q 2 and q 3 are written with “ 1 ” and “ 1 ” for group ( 1111 ), “ 1 ” and “ 0 ” for group ( 1110 ), “ 0 ” and “ 1 ” for group ( 1101 ), and “ 0 ” and “ 0 ” for group ( 1100 ), respectively . the output signals of level comparators 954 , 956 , and 958 for all other higher groups of ( 10xx ), ( 01xx ), and ( 00xx ) are zero but not passed into the data buffers q 2 and q 3 . upon applying the second gate voltage v a1 with the status register value “ 10 ”, the response currents to the applied voltage v a1 for the groups ( 1111 ), ( 1110 ), ( 1101 ), and ( 1100 ) of nvm threshold voltages are greater than the high bound reference currents r hb . the gate switches 920 , 922 , 924 , and 926 are “ off ” and no datum can be over - written into the data buffers q 0 , q 1 , q 2 , and q 3 . the data buffers q 0 , q 1 , q 2 , and q 3 for groups ( 1111 ), ( 1110 ), ( 1101 ), and ( 1100 ) of nvm threshold voltages retain their previous digital values at this applied gate voltage stage . since for the target groups ( 1011 ), ( 1010 ), ( 1001 ), and ( 1000 ) of nvm threshold voltages the response currents to the applied voltage v a1 are between the low bound reference current r lb and high bound reference current r hb , the gate switches 920 , 922 , 924 and 926 are “ on ” and ready to pass the status register bits “ 10 ” and the output signals of level comparators 954 , 956 and 958 into buffers q 0 , q 1 , q 2 , and q 3 . q 0 and q 1 are written to “ 10 ” by the bits of the two - bit status register 980 for applying gate voltage v a1 . q 2 is written by the data from the output signal of level comparator 954 . q 3 is written by the data either from the output signal of level comparator 956 , when the level comparator 954 generates an output value “ 1 ”, or from the output signal of level comparator 958 , when the level comparator 954 generates an output value “ 0 ”, respectively . in the end , the values of q 0 , q 1 , q 2 , and q 3 are “ 1 ”, “ 0 ”, “ 1 ” and “ 1 ” for the group of nvm cell threshold voltages ( 1011 ); the values of q 0 , q 1 , q 2 , and q 3 are “ 1 ”, “ 0 ”, “ 1 ”, and “ 0 ” for the group of nvm cell threshold voltages ( 1010 ); the values of q 0 , q 1 , q 2 , and q 3 are “ 1 ”, “ 0 ”, “ 0 ”, and “ 1 ” for the group of nvm cell threshold voltages ( 1001 ); the values of q 0 , q 1 , q 2 , and q 3 are “ 1 ”, “ 0 ”, “ 0 ”, and “ 0 ” for the group of nvm cell threshold voltages ( 1000 ). since the nvm response currents to the applied gate voltage v a1 for other groups of ( 01xx ) and ( 00xx ) are smaller than the low bound reference current r lb , the gate switches 920 , 922 , 924 and 926 are “ off ” and do not pass the datum into buffers q 0 , q 1 , q 2 , and q 3 . upon applying the third gate voltage v a2 with the status register value “ 01 ”, the response currents to the applied voltage v a2 for the eight groups ( 11xx ) and ( 10xx ) of nvm threshold voltages are greater than the high bound reference currents r hb . the gate switches 920 , 922 , 924 and 926 are “ off ” and no datum can be over - written into the data buffers q 0 , q 1 , q 2 , and q 3 . q 0 , q 1 , q 2 , and q 3 for eight groups ( 11xx ) and ( 10xx ) of nvm threshold voltages retain their previous digital values at this applied gate voltage stage . since for the target groups ( 0111 ), ( 0110 ), ( 0101 ), and ( 0100 ) of nvm threshold voltages , the response currents to the applied voltage v a2 are between the low bound reference current r lb and the high bound reference current r hb , the gate switches 920 , 922 , 924 and 926 are “ on ” and ready to pass the status register bits “ 01 ” and the outputs of level comparators 954 , 956 and 958 into the data buffers q 0 , q 1 , q 2 , and q 3 . the data buffers q 0 and q 1 are written to “ 01 ” by the bit of the two - bit status register 980 for applying gate voltage v a2 . q 2 is written by the data from the output signal of level comparator 954 . q 3 is written by the data either from the output signal of level comparator 956 , when the level comparator 954 generates an output value “ 1 ”, or from the output signal of level comparator 958 when the level comparator 954 generates an output value “ 0 ”. in the end , the values of q 0 , q 1 , q 2 , and q 3 are “ 0 ”, “ 1 ”, “ 1 ” and “ 1 ” for the group of nvm cell threshold voltages ( 0111 ); the values of q 0 , q 1 , q 2 , and q 3 are “ 0 ”, “ 1 ”, “ 1 ”, and “ 0 ” for the group of nvm cell threshold voltages ( 0110 ); the values of q 0 , q 1 , q 2 , and q 3 are “ 0 ”, “ 1 ”, “ 0 ”, and “ 1 ” for the group of nvm cell threshold voltages ( 0101 ); the values of q 0 , q 1 , q 2 , and q 3 are “ 0 ”, “ 1 ”, “ 0 ”, and “ 0 ” for the group of nvm cell threshold voltages ( 0100 ). since the nvm response currents to the applied gate voltage v a2 for other four groups ( 00xx ) are smaller than the low bound reference current r lb , the gate switches 920 , 922 , 924 and 926 are “ off ” and do not pass the datum into buffers q 0 , q 1 , q 2 , and q 3 . upon applying the forth gate voltage v a3 with the status register value “ 00 ”, the response currents to the applied voltage v a3 for the twelve groups ( 11xx ), ( 10xx ), and ( 01xx ) of nvm threshold voltages are greater than the high bound reference currents r hb . the gate switches 920 , 922 , 924 and 926 are “ off ” and no datum can be over - written into the data buffers q 0 , q 1 , q 2 , and q 3 . the data buffers q 0 , q 1 , q 2 , and q 3 for twelve groups ( 11xx ), ( 10xx ), and ( 01xx ) of nvm threshold voltages retain the previous digital values at this applied gate voltage stage . since for the target groups ( 0011 ), ( 0010 ), ( 0001 ), and ( 0000 ) of nvm threshold voltages the response currents to the applied voltage v a3 are between the low bound reference current r lb and high bound reference current r hb , the gate switches 920 , 922 , 924 and 926 are “ on ” and ready to pass the status register bits “ 00 ” and the output signals of level comparators 954 , 956 and 958 into the data buffers q 0 , q 1 , q 2 , and q 3 . q 0 and q 1 are written to “ 00 ” by the bit of the two - bit status register 980 for applying gate voltage v a3 . q 2 is written by the data from the output signal of level comparator 954 . q 3 is written by the data either from the output signals of level comparator 956 , when the level comparator 954 generates an output value “ 1 ”, or from the output signal of level comparator 958 , when the level comparator 954 generates an output value “ 0 ”. in the end , the values of q 0 , q 1 , q 2 , and q 3 are “ 0 ”, “ 0 ”, “ 1 ” and “ 1 ” for the group of nvm cell threshold voltages ( 0011 ); the values of q 0 , q 1 , q 2 , and q 3 are “ 0 ”, “ 0 ”, “ 1 ”, and “ 0 ” for the group of nvm cell threshold voltages ( 0010 ); the values of q 0 , q 1 , q 2 , and q 3 are “ 0 ”, “ 0 ”, “ 0 ”, and “ 1 ” for the group of nvm cell threshold voltages ( 0001 ); the values of q 0 , q 1 , q 2 , and q 3 are “ 0 ”, “ 0 ”, “ 0 ”, and “ 0 ” for the group of nvm cell threshold voltages ( 0000 ). after applying four gate voltages v a0 , v a1 , v a2 and v a3 for the 4 - bit per cell mlc nvm flash the read sequence is completed . the data buffers 910 , 912 , 914 and 916 correctly present the storing bits in the probed mlc nvm cells . in one embodiment of 4 - bit per mlc nvm design , the time required to sense and determine the response current levels of nvm cells 970 for an applied gate voltages is about 30 nanoseconds . the total time to read out the 4 - bit per mlc nvm with 4 applied gate voltage is around 120 nanoseconds .