this invention deals with photoreceiver array based on semiconductor technology that is capable of true single photon counting at 2 . 5 giga samples / sec or higher bit rate . in our earlier patent , as disclosed in u . s . pat . no . 6 , 987 , 306 , we established the feasibility of using integrated apd / vcsoa to achieve high sensitivity photoreceivers and arrays . a notional sketch of the photon counting microdigitized photoreceiver is shown in fig1 . when all the components are integrated it will have sufficient photoelectric gain (& gt ; 10 , 000 ) in the linear mode to achieve true single photon counting . the parameters of the photoreceiver components that are required to be optimized are the optical amplifier gain and the apd gain and dark current . the overall concept of our proposed photoreceiver is to monolithically integrate vcsoas , apds , buffer amplifier and micro - digitization at pixel level to achieve sufficiently high gains for true single photon counting . fig1 illustrates this approach . an incident single photon is amplified by the vcsoa by up to 1000 - fold ( 30 db gain ). the vcsoa has built - in distributed bragg reflectors ( dbr ) as input and output bandpass filters to remove the noise photons due to amplified spontaneous emission ( ase ) and other noise sources . the noise figure of a typical vcsoa is typically 6 db for a gain of 30 db . therefore , in addition to the 1000 photons generated by the vcsoa in response to the incident single photon , 4 noise photons are also generated . these photons are then passed on to the apd where they are converted into photoelectrons by avalanche multiplication . the avalanche multiplication gain can be as high as 100 in the linear mode ( below the breakdown voltage ) and as high as several thousands above the breakdown voltage in the so - called geiger - mode . because of the limited avalanche gain of apds below the breakdown voltage , apds can only be used for photon counting above the breakdown voltage ( i . e . in the geiger - mode ). however , above the breakdown voltage , photogenerated avalanche electrons continue to flow and this requires complex external circuits to quench the current , which considerably reduces the bandwidth of the photoreceiver . with our proposed photoreceivers , the overall photoreceiver gain can be sufficiently high ( up to 100 , 000 as with photomultipliers ) that the apd can be operated in the linear mode and external quenching circuits are not needed . the block diagram of the photoreceiver is shown in fig2 . the first three blocks are integrated in the proposed array as a single chip . the shaper and the counter can be a part of the read out integrated circuit roic . the vcsoa has an integral optical bandpass filter which serves to minimize amplified spontaneous emission from the optical amplifier or any other noise outside its bandpass . the basic requirements for a single photon counting photoreceiver is that the photoelectric gain should be sufficiently high to overcome any signal due to noise electrons introduced by the photoreceiver and associated electronic components . the photon counting probability of a photoreceiver can be expressed by the probability of a single photon generated electron , which is given by : f = exp ⁡ ( 1 - 5 ⁢ σ g - 1 2 ) ( 1 ) where g is the overall gain and 5σ is the noise threshold above which there is detection . to fully evaluate equation 1 , one must develop a noise model . the principal noise sources used for the model are ase noise from the optical amplifier , noise from dark current in the apd , excess noise from the apd due to the avalanche multiplication processes and johnson noise from the buffer amplifier , adc and any other downstream electronics . the photon counting probability estimated using the noise model is plotted in fig3 as a function of optical amplifier and apd gain . for true photon counting , the probability must be close to 1 , i . e . & gt ; 0 . 95 . this condition is met at low gain for the apd and medium to high gain for the vcsoa . this approach allows the apd to be designed for low gain ( linear range below breakdown ) in order to be able to maximize other parameters such as the dark current and noise . therefore , the proposed photon counting photoreceivers will not require external quenching circuits . further analysis using the noise model shows that the apd dark current not only reduces the peak photon counting probability , but it also affects the minimum apd gain . fig4 shows the peak vcsoa / apd photon counting probability as a function of vcsoa gain and dark current . by improving the apd performance or by cooling the photoreceiver to 230k and reducing the dark current by two orders of magnitude , true single photon counting can be done with the proposed photoreceiver with apd and vcsoa gains as low as 100 . in the proposed invention the analog - to - digital converters with sampling rates exceeding of 2 . 5 gbps can be integrated with each pixel . for the design of the high - speed adc , our approach will be to exploit the unique i - v characteristic of the rtbt shown in fig5 , in which the negative resistance is due to the rtd in the emitter of the hbt . the rtbt also has folding i - v characteristics due to multiple tunneling in the collector - base operation of the device . when used to implement comparators , this folding characteristic reduces the number of transistors needed for the comparator by a factor of 2 n − 1 , where n is the number of peaks and valleys . for a device with at least 4 peaks and valleys , the number of transistors in the comparator is reduced by a factor of 15 . this part count reduction is critical for the success of the digitized pixel approach and for not having a drastically reduced fill - factor because of the integrated digitizer . therefore , the rtbt disclosed in u . s . pat . no . 6 , 987 , 306 enables maximum fill - factors for the microdigitized pixels . the key parameters for the rtbt with regard to its adc applications are the pvr , peak current to valley current ratio . a large pvr is needed for large voltage swings , while low peak voltage and currents are required to minimize the power dissipation per pixel . the rtbt can be used to produce photodiodes and hbt amplifiers as well as resonant tunneling diodes for adc , oscillators and switches . it is ideal for single - chip integration of these circuits . as such , it provides the best trade - off between current , gain and negative resistance . the microdigitizer can also be conceived using hbt or hemt based technologies . the high speed digitizers that can be integrated with the pixel is given here . this approach is made possible by two attributes of our proposed photon counting technology . one is the fact that the combined gain of the proposed vcsoa / apd enables a single photon ( 2 . 6 nw in 1 ns ) to generate a microampere current pulse at the input to the microdigitizer ( as compared to a nanoampere with a standard apd ). this current level is within the range of required base currents for the device technology , which will be used to implement the digitizer . therefore , the vcsoa / apd can be connected directly to the digitizer without the need for an intervening amplifier . the second is the fact that the folding characteristic of the rtd reduces the number of transistors needed for the comparator . for example , a 1 - bit digitizer using conventional technology requires at least 20 circuit elements ( including transistors . with our approach only 4 circuit elements are required . these elements are two resonant tunneling bipolar transistors ( rtbt ) and two resistive elements . fig6 shows a schematic of the 1 - bit digitizer circuit that can be integrated with each apd - vcsoa pixel . the circuit is essentially a comparator , which compares the input signal v in with the least significant bit , v lsb , which would be typically half of the maximum expected signal . it generates a digital “ 1 ” when v in is greater than v lsb and the sampling pulse , v sample is on , otherwise it generates a “ 0 ”. the result is a bit stream that represents when the received signal is larger than a preset threshold . the photoreceiver array will consist only of the vcsoa / apd and the microdigitizer in each pixel . since the output of the micro - digitizer is either a “ 1 ” ( 0 . 5 to 5 v ) or a “ 0 ” ( 0 v ), it can be connected directly to bond pads for direct interconnect with high pin - count packages . fig7 illustrates a notional array design for this type of array configuration which is possible because the combined gain of the vcsoa / apd enable a single photon ( 2 . 6 nw in 1 ns ) to generate a microampere current pulse at the input to the micro - digitizer ( as compared to a nanoampere with a standard apd ). microampere current levels are within the range of required base currents for the rtbt technology . if a buffer amplifier is required between the vcsoa / apd and adc , the hbt part of the rtbt can be used to design the amplifier . further , the arrays of optically preamplified photoreceivers with micro - digitized pixels can be bump bonded to other circuits enabling higher fill - factors . the proposed invention on photon counting optically preamplified photoreceivers with micro - digitized pixels uses inp based technology , the concept of can be extended to other wavelengths covering ultra violet to very long wavelength infrared using the inp , gaas , gasb , inas , insb , sige , sic , si , gan etc . based technologies . the design of this photoreceiver can be expanded to other wavelengths to produce small , monolithic pixilated photon counting photoreceivers with a wide range of commercial and military applications .