referring now to the figures of the drawing in detail and first , particularly to fig1 thereof , there are seen various layers of material , applied and structured in various method steps . beginning with a substrate 1 , a first , relatively thick oxide layer 2 is created . over it , a first polysilicon layer 3 is applied , which is structured with a phototechnique so as later to form a bearing point for the cantilever . after that , a second oxide layer 4 is applied , whose essential task is to cover the bearing point 18 formed out of the first polysilicon layer 3 . outside this region , the oxide layer is removed again , so that as shown in fig1 in the next step a second polysilicon layer 5 can be applied . however , it would also be possible not to etch this second oxide layer 4 away in some regions , so that the second polysilicon layer 5 would then be formed entirely on the level of the raised step shown in the right - hand region of the polysilicon layer 5 . the second silicon layer 5 is doped and is recrystallized with a high - temperature treatment , and in the process the dopants are also activated . next , an array of holes 6 is created in the polysilicon layer 5 by structuring , with the aid of a phototechnique and ensuing etching . the array of holes 6 serve to layer carry the etching liquid through to the regions located under the polysilicon layer 5 , so as to create the voids . at places where nitride props or pillars are later to be made , an adapted hole 26 , that is , a hole that is sufficiently large to avoid collision with the cantilever , is made in the polysilicon layer 5 . onto this second polysilicon layer 5 , a third oxide layer 7 is applied , planarized and densified . with a phototechnique , the oxide layer 7 is structured , so that it ends in the region of the arrow 14 , and in the next step a further , fourth oxide layer 8 is applied , which extends over the third oxide layer and the second polysilicon layer 5 . in the next step , a third polysilicon layer 9 is applied , which forms the covering of the sensor . it is doped and , in a high - temperature step , recrystallized . in the process , the dopants are activated . to define the outer dimensions of the sensor and to create an array of holes 10 in the third polysilicon layer 9 , the polysilicon layer 9 is structured with the aid of a phototechnique and then etched at the appropriate points . a dry , anisotropic oxide etching with an isotropic component is performed , distributed over the surface in some holes of the array of holes 10 , in order to create a void in the oxide layers , in which void a pillar can be formed . the void extends essentially at right angles from the third polysilicon layer 9 downward as far as the substrate 1 and leads through the adapted , large hole in the array of holes 10 of the second polysilicon layer 5 . next , a nitride layer 11 is applied , which also fills the previously made void , forming a nitride prop or pillar 12 . the nitride deposits predominantly on the walls , resulting in a void 13 in the interior of the nitride pillar 12 . since the previous etching of the void has an isotropic component , the void and thus the nitride pillar 12 as well extends underneath the third polysilicon layer 9 , engaging it , and therefore supports it . to carry out the rest of the method , the nitride layer 11 is dry etched , forming holes 15 , above all in the region of the array of holes 10 located beneath . in the next step , an isotropic etching of the oxide layers can then be done to form a void , through the holes in the polysilicon layer 9 and the nitride layer 11 . first , however , an anisotropic dry oxide etching is performed only at some points , with an isotropic component , thereby forming further voids 16 . the isotropic component must be so large that the void also encompasses regions of the second polysilicon layer 5 that forms the cantilever . these voids are filled with resin in an ensuing phototechnique , so that resin pillars are formed in the sensor ; during the ensuing oxide etching , they hold the cantilever in a predetermined position and thus prevent sinking of the cantilever 17 . in this way , the cantilever is prevented from sticking by suction during the oxide etching under the influence of the etching liquid . after the etching of the void , the resist pillars are removed again . the holes of the array of holes 10 , which are formed in the third polysilicon layer 9 , are geometrically smaller than the holes of the array of holes 6 in the second polysilicon layer 5 , since the first - mentioned holes have to be closed again at the end . the result is the structure shown in fig2 with the bearing point 18 , which is formed out of the first polysilicon layer 3 , which is also called an auxiliary layer ; the cantilever 17 having an edge 22 and being formed out of the second polysilicon layer ; and the covering , which essentially comprises the third polysilicon layer 9 . the support 18 and the motion limiters 12 are received in a receptacle 24 surrounding the cantilever edge . the holes still present in the region of the covering formed of the third polysilicon layer 9 are covered and closed with an oxide or boron phosphorus silicate glass ( bpsg ). at some suitable point , a contact hole 20 is etched , and through it a metal contact is passed to the cantilever 17 located beneath . in this process , care must be taken that the metal contact have no contact with the polysilicon layer 3 in the region of the array of holes 6 . this is done by means of an interruption 19 in the polysilicon layer 3 . the sensor can now function as intended , as a result of the varying capacitances between the cantilever 17 and the polysilicon layer 9 on the one hand and between the cantilever 17 and the substrate 1 on the other . fig3 shows a plan view on the sensor , in which the dashed line indicates the outer dimensions that are determined by the third polysilicon layer 9 . the third polysilicon layer covers not only the main region of the cantilever 17 but also the continuation of the cantilever 17 , shows at the lower right , in which the bearing point 18 formed out of the first polysilicon layer 3 is also located . the third polysilicon layer 9 is embodied separately in these two regions , in order to avoid electrical contact with the cantilever 17 . both the array of holes 6 of the second polysilicon layer and above it the array of holes 10 of the third polysilicon layer 9 are disposed in the central region of the cantilever 17 .