there will be described below embodiments of the present invention with reference to the drawings . [ 0045 ] fig1 is a cross section showing a structure of a semiconductor device in a first embodiment . as shown in fig1 a semiconductor device is composed of a semiconductor substrate having an n − layer 101 , a p b layer 102 , an n e layer 103 , an n + layer 104 , a p e layer 105 and a p layer 106 , a cathode electrode 107 , an anode electrode 108 and a control ( gate ) electrode 109 in the p b layer 102 . the n − layer 101 and the p b layer 102 form a pn joint . the p b layer 102 and the n e layer 103 form a pn joint . the n e layer 103 and the p layer 106 form a pn joint . the n + layer 104 and the p e layer 105 form a pn joint . in addition , the n e layer 103 and the p layer 106 are exposed from a surface where the semiconductor substrate contacts with the cathode electrode 107 , and the n e layer 103 surrounds the p layer 106 . here , the cathode electrode 107 short - circuits the n e layer 103 and the p layer 106 . the exposed surface of the p layer 106 is rectangular , oval or the like , and it is preferable its maximum length of a short - length direction is not more than 100 μm . in fig1 the maximum length in the short - length direction of the exposed surface of the p layer 106 corresponds to a width w of the p layer 106 or an interval w of the p e layer 105 . the n + layer 104 and the p e layer 105 are exposed from a surface where the semiconductor substrate contacts with the anode electrode 108 , and the p e layer 105 surrounds the n + layer 104 . the anode electrode 108 short - circuits the n + layer 104 and the p e layer 105 . in addition , the p b layer 102 and the p layer 106 are separated by the n e layer 103 . the p b layer 102 and the p e layer 105 are separated by the n − layer 101 and the n + layer 104 . with the above structure , this semiconductor device is composed so that the diode area 120 and the gto area 121 which serves as a switching element are provided in same structure . in the semiconductor device , the diode area 120 and the gto area 121 are connected in antiparallel so as to compose a circuit . in this structure , an area which separates the diode area 120 from the gto area 121 is not provided . next , there will be explained below as to that the width w of the p layer 106 or the interval w of the p e layer 105 is preferably not more than 100 μm . fig2 is a graph showing a relationship between the width w of the p layer 106 or the interval w of the p e layer 105 and a spike voltage . the width w of p layer 106 strongly relates to the interval of the p e layer 105 , and they influence rising or the like at the time of switching operation . as shown in fig2 as the width w of the p layer 106 or the interval w of the p e layer 105 becomes wider , a spike voltage v sp becomes larger . when the width w of the p layer 106 or the interval w of the p e layer 105 exceeds 100 μm , the spike voltage v sp exceeds a value of absolute withstand voltage × 0 . 8 . in order to prevent the semiconductor device from being broken due to the spike voltage v sp , the width w of the p layer 105 or the interval w of the p e layer 105 is set to no more than 100 μm . here , the absolute withstand voltage is a limit value which causes breakdown of the semiconductor device under any conditions . next , there will be explained below a semiconductor device manufacturing method with reference to fig3 a through 3c and fig4 a and 4b . [ 0052 ] fig3 a through 3c and fig4 a and 4b are cross sections showing the steps of manufacturing the semiconductor device . at first , boron which is a dopant as impurity is injected from a cathode side ( upper side of the drawing ) into the semiconductor substrate n − layer 101 made of silicon or the like by using an ion injecting method so that the dopant is introduced . thereafter , the substrate is heated for a long time at a temperature of not less than 1200 ° c . and the impurity is diffused so that the p b layer 102 is formed ( fig3 a ). next , phosphorus which is a dopant as impurity is injected from the cathode side by using the ion injecting method and is diffused similarly so that the n e layer 103 is formed ( fig3 b ). next , boron with high density is injected from the cathode side and partially diffused so that the p layer 106 with high density is formed ( fig3 c ). at this time , a conventional method of forming a mask and injecting boron into an unnecessary portion is not needed . next , phosphorus with high density is injected from an anode side ( lower side of the drawing ) and is diffused so that the n − layer 104 is formed . further , boron is injected from the anode side and is partially diffused so that the p e layer 105 is formed ( fig4 a ). at this time , a conventional method of forming a mask and injecting boron into an unnecessary portion is not needed . moreover , the p e layer 105 which is diffused from the anode side forms an anode short structure partially . next , the cathode electrode 107 is provided so as to short - circuit the n e layer 103 and the p layer 106 , and the anode electrode 108 is provided so as to short - circuit the n + layer 104 and the p e layer 105 . further , a control electrode 109 is taken out from the p e layer 102 ( fig4 b ). next , there will be explained below another structure of the semiconductor device . [ 0056 ] fig5 is a cross section of the semiconductor device in the first embodiment . as shown in fig5 the semiconductor device has a cold welding structure in which the cathode electrode 107 and the anode electrode 108 of the semiconductor device shown in fig1 are pressed by a metal plate made of , for example , molybdenum or the like . with this structure , the semiconductor device can be used easily . in the semiconductor device according to the first embodiment of the present invention , the gto area 121 having the switching ability and the diode area 120 having the diode ability coexist in the one structure , thereby increasing the area of the chip and reducing the thermal resistance . further , the semiconductor device in the first embodiment does not require a conventional separating area , and the gto area 121 and the diode area 120 commonly have the pn joint so that the actual operating area can be enlarged . [ 0060 ] fig6 is a cross section showing a structure of the semiconductor device in a second embodiment . as shown in fig6 the semiconductor device is composed of a semiconductor substrate having an n − layer 301 , a p + layer 302 , a p b layer 303 , n + layers 304 and an n layer 305 , an emitter electrode 306 , a collector electrode 307 , control electrodes 308 and oxide films 309 which serves as a dielectric . the n − layer 301 and the p + layer 302 form a pn joint . the p + layer 302 and the n layer 305 form a pn joint . the n − layer 301 and the p b layer 303 form a pn joint . the n + layers 304 and the p e layer 303 form pn joints . in addition , the p b layer 303 and the n + layers 304 are exposed from a surface where the semiconductor substrate contacts with the emitter electrode 306 , and the p b layer 303 surrounds the n + layers 304 . here , the emitter electrode 306 short - circuits the n + layers 304 and the p b layer 303 , and serves also as an anode electrode . the n layer 305 and the p + layer 302 are exposed from a surface where the semiconductor substrate contacts with the collector electrode 307 , and the p + layer 302 surrounds the n layer 305 . the collector electrode 307 short - circuits the p + layer 302 and the n layer 305 , and serves also as a cathode electrode . in addition , the n + layers 304 and the n − layer 301 are separated by the p b layer 303 . the n layer 305 and the n − layer 301 are separated by the p + layer 302 . further , the oxide films 309 as insulators are provided on the n − layer 301 and the p b layer 303 and the n + layers 304 so as to contact with the n − layer 301 and the p b layer 303 and the n + layers 304 . the control electrodes 308 are provided on the oxide films 309 . according to the above structure , in the semiconductor device , the diode area 120 and igbt area 122 which serves as a switching element are provided in the same structure . in the semiconductor device , the diode area 120 and the igbt area 122 are connected in antiparallel so as to form a circuit . in this structure , an area which separates the diode area 120 from the igbt area 122 is not provided . next , there will be explained below an off state of the semiconductor device . [ 0065 ] fig7 is an explanatory diagram for explaining the off state of the semiconductor device in the second embodiment . as shown in fig7 an electric potential of the collector ( cathode ) electrode 307 is higher than an electric potential of the emitter ( anode ) electrode 306 . when a difference in the electric potential between the collector electrode 307 and the emitter electrode 306 is small , an electric current does not flow . however , the difference in the electric potential is large , a breakdown phenomenon that an electric current abruptly flows occurs . when the difference in the electric potential becomes larger , there is a possibility that the pn joint is structurally broken . in order to prevent the structural breakdown of the pn joint , an electric potential of the control electrodes 308 is set to be lower than the electric potential of the emitter electrode 306 . this is because when the electric potential of the control electrodes 308 is set to be lower than the electric potential of the emitter electrode 306 , surface density of the n − layer 301 and the n + layers 304 just below the control electrodes 308 via the oxide films 309 is inverted so that the p b layer 303 can be thick . when the p b layer 303 is thick , a flow of the electric current from the n − layer 301 to the n + layer 303 can be prevented , and the structural breakdown of the pn joint between the p b layer 303 and the n − layer 301 can be prevented . therefore , in the case where a reverse voltage is applied to the semiconductor device , the electric potential of the control electrodes 308 is controlled so as to be not more than the electric potential of the emitter electrode 306 . next , there will be explained below the semiconductor device manufacturing method according to the second embodiment . similarly to the semiconductor device manufacturing method in the first embodiment , a dopant as impurity is injected by the ion injecting method and after the dopant is introduced , the substrate is heated for a long time at a temperature of not less than 1200 ° c . and impurity is diffused so that the respective semiconductor layers are formed . needless to say , in order not to inject the dopant into an unnecessary portion , a mask is formed by the conventional method . at first , boron is injected from a first surface side of the semiconductor substrate into the semiconductor substrate n − layer 301 made of silicon or the like and is diffused so that the p b layer 303 is formed . here , a first surface means upper side of fig7 . next , phosphorus with high density is injected from the first surface side and is diffused similarly so that the n + layers 304 are formed . at this time , a plurality of the diffused n + layers 304 is formed partially . next , boron with high density is injected from a second surface side and is diffused so that the p + layer 302 is formed . here , a second surface means lower side of fig7 . next , phosphorus is injected from the second surface side and is diffused so that the n layer 305 is formed . next , the oxide films 309 are formed on the n − layer 301 and the p b layer 303 and the n + layers 304 of the first surface . next , the control electrodes 308 are provided on the oxide films 309 , and the emitter electrode 306 is provided so as to short - circuit the p b layer 303 and the n + layers 304 . the collector electrode 307 is provided so as to short - circuit the p + layer 302 and the n layer 305 . in the semiconductor device in the second embodiment , the igbt area 122 having the switching ability and the diode area 120 having the diode ability coexist in the one structure , thereby increasing the area of the chip , and reducing the thermal resistance . further , the semiconductor device in the second embodiment does not require the conventional separating area , and the igbt area 122 and the diode area 120 commonly have the pn joint so that the actual operating area can be enlarged .