fig3 shows a cross - section illustrating a multi - domain liquid crystal display according to an embodiment of the invention . referring to fig3 , the multi - domain liquid crystal display 10 includes a color filter substrate 12 and an array substrate 14 , with a liquid crystal layer 16 having negative dielectric anisotropy interposed between them where the liquid crystal molecules are vertically - aligned without being applied with voltage . further , an additive of chiral dopant may be added to the liquid crystal layer 16 to adjust the twist pitch to a desired value so as to reduce the areas of a disclination region . in the array substrate 14 , a switching device 20 such as a thin film transistor ( tft ), a pixel electrode 22 , and a first alignment layer 24 are formed on a transparent substrate 18 . further , in the color filter substrate 12 , a color filter 28 , a black matrix layer 30 , a common electrode 32 , and a second alignment layer 34 are formed on a transparent substrate 26 . note that , as used in this description and in the appended claims , the meaning of the phrase “ layer a is formed or provided on layer b ” is not limited to a direct contact between the layer a and the layer b . for instance , in an embodiment where laminates are interposed between the upper layer a and the lower layer b is encompassed within the scope of the phrase “ layer a is formed or provided on layer b ”. fig4 shows a plan view observed from the normal direction of an array substrate according to an embodiment of the invention . fig5 a shows a cross - sectional view taken along line a - a ′ in fig4 , and fig5 b shows a cross - sectional view taken along line b - b ′ in fig4 . referring to fig4 , a plurality of gate lines 44 are arranged extending in the lateral direction of a pixel 40 , and a plurality of data lines 46 are arranged extending in the lengthwise direction of the pixel 40 , with each two gate lines 44 intersected with each two data lines 46 to define a pixel region on the array substrate 14 . a pixel electrode 48 made of transparent conductive films is spread on each pixel region , and the transparent conductive films may be made from indium tin oxide ( ito ) or indium zinc oxide ( izo ). a switching device such as an amorphous silicon thin film transistor ( a - si tft ) 42 is formed in the vicinity of each intersection of the gate lines 44 and the data lines 46 . referring to fig5 a , a metal 1 layer m 1 made from cr , ta , or al / mo metallic films is deposited on the transparent substrate 18 and patterned to define the gate lines 44 and the gate 42 g of the a - si tft 42 . a dielectric gate insulation layer 52 is formed overlying the metal 1 layer m 1 . for example , the gate insulation layer 52 may be formed by depositing silicon nitride ( sinx ) on the metal 1 layer m 1 through chemical vapor deposition . a channel region 42 c ( pure amorphous silicon ( a - si : h )), an ohmic contact layer 42 e ( doped amorphous silicon ( n + a - si : h )) and a metal 2 layer m 2 are formed on the gate insulation layer 52 . specifically , the metal 2 layer m 2 made from al / cr , al / ti , ti , or mo / al / mo metallic films is sputtered on the gate insulation layer 52 and patterned to define the source 42 s and the drain 42 d of the a - si tft 42 and the data lines 46 . the source 42 s and the drain 42 d of the a - si tft 42 are provided at two sides of the channel region 42 c . a dielectric passivation layer 54 is formed overlying the gate insulation layer 52 and the metal 2 layer m 2 to cover the source 42 s and the drain 42 d of the a - si tft 42 and the data lines 46 . the passivation layer 54 may be made from silicon nitride ( sinx ), acrylic resin , or polyimide . then , transparent conductive films made from indium tin oxide ( ito ) or indium zinc oxide ( izo ) are deposited on the passivation layer 54 and patterned to form the pixel electrode 48 . the gate 42 g , the source 42 s and the drain 42 d of the a - si tft 42 are respectively connected to the gate lines 44 , the data lines 46 , and the pixel electrode 48 . when the above typical tft fabrication processes finish , according to the invention , another dielectric layer 56 and a metal 3 layer m 3 are sequentially formed on the pixel electrode 48 , as shown in fig5 b . the dielectric layer 56 may be made from silicon nitride ( sinx ), acrylic resin , or polyimide . the metal 3 layer m 3 is deposited on the dielectric layer 56 and wired up to the common electrode 32 on the color filer substrate ( shown in fig3 ), so that the metal 3 layer m 3 is provided with a voltage potential vcom and thus functions as another common electrode on the array substrate 14 . further , the metal 3 layer m 3 may be made of transparent conductive films such as ito and izo , or made of metallic conductive films such as al / nd or al / mo . the distribution of the metal 3 layer m 3 on the dielectric layer 56 and its accompanying effect are described below . first , as indicated by the hatched lines shown in fig4 , the metal 3 layer m 3 includes multiple strip - shaped sections that extend parallel to the gate lines 44 ( such as sections m 3 a and m 3 b ) or parallel to the data lines 46 ( such as sections m 3 c and m 3 d ), and all strip - shaped sections define multiple rectangular enclosed regions 62 , such as three rectangular enclosed regions 62 shown in fig4 . since each enclosed region 62 overlaps with the pixel electrode 48 , a voltage difference exists between each common electrode section m 3 a , m 3 b , m 3 c or m 3 d and the pixel electrode 48 produces fringe fields . the operation principle about how the metal 3 layer m 3 ( common electrode ) induces fringe fields to tilt liquid crystal molecules is described below with reference to fig6 a and 6b . referring to fig6 a , when no voltage is applied across a common electrode 32 and the pixel electrode 48 , the liquid crystal molecules 64 with negative dielectric anisotropy are naturally vertically - aligned . then , when a voltage is applied across the common electrode 32 and the pixel electrode 48 for a period , fringe fields are produced due to the voltage difference between the metal 3 layer ( having a voltage potential vcom ) and the pixel electrode 48 ( having a voltage potential vpixel ). thus , the liquid crystal molecules 64 are directed to a direction perpendicular to the oblique electric field as indicated in fig6 b . in that case , since each enclosed region are defined by four common electrode sections m 3 a , m 3 b , m 3 c , and m 3 d , the orientation of liquid crystal molecules 64 within one pixel is divided into four tilt directions in relation to the four common electrode sections to obtain a four - domain profile of a liquid crystal cell . fig7 shows a simulation diagram illustrating the distribution of tilted liquid crystal molecules . referring to fig7 , it can be clearly seen the liquid crystal molecules 64 spread in the two sides of the pixel electrode 48 are slanted toward the center of the pixel electrode 48 due to the voltage difference between the metal 3 layer m 3 and the pixel electrode 48 . according to this embodiment , a multi - domain profile of a liquid crystal cell is formed by means of common electrode sections of the metal 3 layer m 3 , which are formed accompanied by typical tft fabrication processes to produce fringe fields . thus , compared with the conventional design where a protrusion or a via structure is used to tilt liquid crystal molecules , the residue phase difference is eliminated to avoid light leakage . further , compared with another conventional design where slits are formed to produce fringe fields , the biased electrode allows for stronger field strength to tilt liquid crystal molecules so as to reduce the areas of a disclination region and further increase the light - transmittance of an lcd . referring again to fig4 , though each pixel region is divided into three enclosed regions 62 each surrounded by four common electrode sections m 3 a - m 3 d , this division is not limited . in an alternate embodiment , each pixel region may be divided by the metal 3 layer m 3 into two enclosed regions 62 , as shown in fig8 . alternatively , each pixel region may be divided into four or six enclosed regions 62 arranged in two columns , as shown in fig9 and fig1 . though the response time of liquid crystal molecules is reduced as the number of the enclosed regions 62 in each pixel region is increased , such division is not limited and is determined according to the actual demand . further , the relative positions of the metal 3 layer m 3 and the pixel electrode 48 are not limited as long as sufficient field strength is provided . in one embodiment , the periphery portions of the metal 3 layer m 3 are outside the projection of the pixel electrode 48 , as shown in fig4 . in an alternate embodiment , the periphery portions of the pixel electrode 48 are outside the projection of the metal 3 layer m 3 , as shown in fig1 . moreover , according to the design of the invention , the overlapped portions between the metal 3 layer m 3 and the pixel electrode 48 also form a storage capacitor cst , with the dielectric layer 56 interposed between them . fig1 shows a plan view illustrating a transflective pixel structure 60 according to another embodiment of the invention , and fig1 is a cross - sectional view taken along line c - c ′ in fig1 . according to this embodiment , the metal 3 layer m 3 that cooperates with the pixel electrode 48 to produce fringe fields is made of metallic materials having high reflectivity . as shown in fig1 and fig1 , the reflective metal 3 layer m 3 is patterned to form multiple common electrode sections used to produce fringe fields and a reflective layer 58 . the reflective layer 58 , which constitutes the reflective region of the transflective pixel structure 60 , is surrounded by the common electrode sections and maintains a gap apart from them . certainly , the area of the reflective layer 58 may be arbitrary selected depending on any factor such as environmental brightness . for example , as shown in fig1 , in case the metal 3 layer m 3 divides a pixel region into three rectangular enclosed regions 62 , the reflective layer 58 may spread within only one enclosed region 62 when the area of the transmissive region is required to be larger than that of the reflective region . in comparison , when the area of the reflective region is required to be larger than that of the transmissive region , the metal layer 3 may spread within two enclosed regions 62 . hence , according to the invention , since the metal 3 layer m 3 are patterned to form both the common electrode sections m 3 a - m 3 d and the reflective layer 58 under the same fabrication process , the fabrication of a transflective liquid crystal display is simplified . fig1 shows a cross - sectional view illustrating another embodiment of the invention . referring to fig1 , during the fabrication processes of a multi - domain lcd , a flattened dielectric layer 66 is additionally formed on the passivation layer 54 , and the pixel electrode 48 is formed on the flattened dielectric layer 66 . hence , the formation level of the pixel electrode 48 is raised to allow for more spread areas and thus to improve the aperture ratio of a multi - domain lcd . fig1 shows a cross - sectional view illustrating another embodiment of the invention . referring to fig1 , a metal 2 layer m 2 is deposited on the gate insulation layer 52 , and the metal 2 layer m 2 is patterned to define data lines 46 and a common electrode 68 . the common electrode 68 may include multiple sections having a distribution identical to the metal 3 layer m 3 shown in fig4 to produce fringe fields . also , the overlapped portions between the common electrode 68 and the pixel electrode 48 also form a storage capacitor cst . fig1 shows a plan view illustrating a transflective pixel structure according to another embodiment of the invention , and fig1 shows a cross - sectional view taken along line d - d ′ in fig1 . as shown in both fig1 and fig1 , in this embodiment , the metal 2 layer is made of metallic materials having high reflectivity and patterned to define both the common electrode 68 and a reflective layer 58 , with the reflective layer 58 maintaining a gap apart from the common electrode 68 and constituting the reflective region of a transflective liquid crystal display . fig1 shows a cross - sectional view illustrating another embodiment of the invention . referring to fig1 , a metal 1 layer m 1 is deposited on a transparent substrate 18 and patterned to define the gate lines 44 ( not shown ) and a common electrode 72 . the common electrode 72 may include multiple sections having a distribution identical to the metal 3 layer m 3 shown in fig4 to produce fringe fields . also , the overlapped portions between the common electrode 72 and the pixel electrode 48 form a storage capacitor cst . fig2 shows a cross sectional - view illustrating the interconnection between two adjacent pixels according to the embodiment shown in fig1 . referring to fig2 , a portion of the gate insulation layer 52 on the common electrode 72 in a first pixel is removed to form a fist contact hole 70 , and a portion of the gate insulation layer 52 on the common electrode 72 ′ in a second pixel adjacent to the first pixel is removed to form another contact hole 70 ′. the contact holes 70 and 70 ′ are connected with each other through a patterned metal 2 layer m 2 . fig2 shows a plan view illustrating a transflective pixel structure according to another embodiment of the invention , and fig2 shows a cross - sectional view taken along line e - e ′ in fig2 . in this embodiment , the metal 1 layer is made of metallic materials having high reflectivity and patterned to define both the common electrode 72 and a reflective layer 58 , with the reflective layer 58 maintaining a gap apart from the common electrode 72 and constituting the reflective region of a transflective liquid crystal display . fig2 shows a plan view illustrating another embodiment of the invention . referring to fig2 , except a metal 1 layer is patterned to define multiple common electrode sections to produce fringe fields , the pixel electrode 48 is also provided with slits 74 to enhance the field strength for tilting the liquid crystal molecules within selected regions so as to further reduce the areas of a disclination region . certainly , the common electrode sections may be formed from a metal 2 layer under the condition that the slits 74 are provided . further , the shape and location of the slits are not limited . preferably , the slits 74 may be strip - shaped and substantially parallel to the common electrode sections . for example , as shown in fig2 , the pixel electrode 48 may be provided with both slits 74 a overlapping the common electrode sections and slits 74 b not overlapping the common electrode sections . moreover , under the condition the common electrode sections together with the slits are both formed to produce fringe fields , the distribution of the common electrode sections is also not limited . for example , each pixel region may be divided into two or three enclosed regions 62 as shown in fig2 and 25 , or alternatively , each pixel region may be divided into six enclosed regions 62 arranged in two columns , as shown in fig2 . besides , referring to fig2 , a polarizer 76 a is positioned next to the transparent substrate 26 and opposite to the liquid crystal layer , and a polarizer 76 b is positioned next to the transparent substrate 18 and opposite to the liquid crystal layer . a pair of quarter wavelength plates 78 a and 78 b are respectively provided between the transparent substrate 26 and the polarizer 76 a and between the transparent substrate 18 and the polarizer 76 b , so that a linear polarized liquid crystal cell is transformed into a circular polarized liquid crystal cell to improve the light transmittance of a multi - domain lcd . while the invention has been described by way of examples and in terms of the preferred embodiments , it is to be understood that the invention is not limited to the disclosed embodiments . to the contrary , it is intended to cover various modifications and similar arrangements as would be apparent to those skilled in the art . for example , the gate lines 44 may be defined from the metal 2 layer , and the data lines 46 may be defined from the metal 1 layer . therefore , the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements .