with reference to the accompanying drawings , fig1 a shows a cross - sectional view of a semiconductor device 90 including a number of interlayer connectors 100 a , 100 b ( hereinafter “ connectors ”) for preventing delamination of at least two layers of the semiconductor device according to the invention . fig1 b shows a plan view of the same structure . in the embodiment shown , semiconductor device 90 includes a first distal layer 106 , at least one cover layer 108 , and a second distal layer 122 . it should be recognized , however , that device 90 may include practically any number of layers . a hard mask layer atop second distal layer 122 has been omitted for clarity purposes . furthermore , the layers may include practically any material used in semiconductor fabrication , for example , dielectric material such as silicon dioxide ( sio 2 ), cap material such as silicon nitride ( sin ) or silicon carbide ( sic ), low - k dielectric material such as silk , coral or black diamond , or metal such as copper ( cu ) or aluminum ( al ). in any event , connector 110 prevents delamination of the layers . as used herein , “ distal layer ” designates an uppermost or lowermost layer to which the connector is to be applied , and “ cover layer ” designates a cap layer 124 of , for example , silicon nitride ( sin ), silicon carbide ( sic ) or silicon - carbon - nitrogen ( sicn ), or a hard mask layer 126 . hard mask layer 126 is substantially coplanar with an uppermost surface of damascene wires 132 a , 132 b . in the embodiments described herein , distal layer is described as a dielectric layer . it should be recognized , however , that a distal layer may also be a metal layer , if desired . each connector 100 a , 100 b includes : a first connector head 102 located in a dielectric area 104 of first distal layer 106 of the at least two layers of semiconductor device 90 , a connector body 110 coupled to first connector head 102 , and a second connector head 120 coupled to connector body 110 and located in second distal layer 122 of the at least two layers of semiconductor device 90 . as illustrated , each connector head 102 , 120 includes a portion 130 that extends laterally beyond connector body 110 , which prevents layers 106 , 108 and 120 from being pulled apart . in one embodiment , first connector head 102 undercuts cover layers 108 ( i . e ., extends laterally beyond connector body 110 ), and second connector head 120 includes a portion that overhangs ( i . e ., extends laterally beyond ) connector body 110 . in one embodiment , as shown on the left side of fig1 a - 1b , a connector 100 a can be formed such that it is electrically isolated from current - carrying wiring 132 a , 132 b . that is , connector 100 a provides no other function than as interlayer connectors . alternatively , as shown on the right side of fig1 a - 1b , a connector 100 b can be partially landed on a current - carrying wire 132 in first distal layer 106 , and may include a metal so as to provide a contact via . in this case , the partial landing on current - carrying wire 132 b allows formation of first connector head 102 b as an undercut to cover layers 108 , which prevents connector head 102 b from being pulled out of first distal layer 106 . a conventional fully - landed dual damascene via 112 to wire 132 a is shown in the center of fig1 a - 1b . connectors 100 a and 100 b can be formed independently or in a single step , as will be described further below . connector 100 a can be formed as part of an active wire or as a pure dummy connector ( isolated from active wires ). similarly , connector 100 b can be formed as part of an active wire with via 110 that also functions as a connector head , or connector 100 b can be formed as a pure dummy connector . as shown in fig2 , in an alternative embodiment , for , e . g ., a device edge seal , a plurality of first connector heads 202 can be provided that are substantially or completely contiguous . in addition , a plurality of second connector heads 220 can be provided that are substantially or completely contiguous . a plurality of connector bodies 210 may be provided to couple the plurality of first connector heads 202 to plurality of second connector heads 220 provides structural rigidity ( e . g ., that prevents delamination along a device edge seal ). the fig2 embodiment could also be extended to be a multiple vertically - stacked ladder structure ( not shown ) sharing the rails and staggering rungs across multiple layers . turning to fig3 - 8 , a first embodiment of a method of forming connector 100 a , 100 b for use in semiconductor device 90 will now be described . in general , the method includes a first step of forming an opening for generation of an interlayer connector , and then filling the opening . it should be recognized that the center part of fig3 - 8 illustrate formation of conventional dual damascene via 112 ( fig1 ) to wire 132 a and wires 140 ( fig1 b only ), which may be formed simultaneously with connectors 100 a , 100 b of the invention . that is , interlayer connector 100 a , 100 b may be formed simultaneously with via 112 and wires 140 , as shown in fig1 b . connector head areas 158 a , 158 b ( fig3 - 6 ) of an interlayer connectors 100 a , 100 b may connect to a via 112 or a wire 140 . in a first step , as shown in fig3 - 6 , at least one opening 150 a , 150 b is formed . as will become more apparent , openings 150 a , 150 b can either land on device areas with no wires below or partially on wires below . as shown in fig6 only , each opening 150 a , 150 b ultimately includes a main body 152 a , 152 b , a first connector head area 154 a , 154 b in dielectric area 104 of first distal layer 106 and a second connector head area 158 a , 158 b in second distal layer 122 . second connector head area 158 a , 158 b may also act as damascene wires 140 ( fig1 b ), and opening 152 b can act as an active via . each first connector head area 154 a , 154 b includes at least one portion 160 that extends laterally beyond main body 152 a , 152 b . similarly , each second connector head area 158 a , 158 b includes at least one portion 162 that extends laterally beyond main body 152 a , 152 b . main body 152 a , 152 b extends through any intermediate overlying layers . in one embodiment , overlying layers include cover layers 108 of first distal layer 106 such as a cap layer 124 or a hard mask layer 126 , which may include one or more of silicon carbide ( sic ), silicon - carbon - nitrogen ( sicn ), hydrogenated silicon oxycarbide ( sicoh ), silicon dioxide ( sio 2 ), silicon nitride ( sin ), etc . along with formation of openings 150 a , 150 b for formation of interlayer connectors 100 ( fig1 ), other opening ( s ) 150 c each including a main body 152 c may be formed for constructing conventional fully - landed dual damascene vias 112 ( fig1 ). returning to fig3 - 5 , details of one embodiment of forming openings 150 a , 150 b will now be discussed . in fig3 , formation of each opening 150 a - c may be initiated by conducting one or more depositions and dual damascene patterning of a photoresist mask ( not shown ) and etching to form main bodies 152 a - c in layers 122 , 124 , and second connector head areas 158 a , 158 b , as known in the art . in this step , cap layer 124 is opened . in fig4 , an optional thin ( 1 - 50 nm ) liner 170 composed of , for example , one or more layers of tantalum - nitride ( tan )( preferred ), titanium - nitride ( tin ), tungsten - nitride ( wn ), tantalum ( ta ), tungsten or other liner material is deposited . the deposition may use , for example , physical vapor deposition ( pvd ), ionized pvd , self - ionized plasma ( sip ), chemical vapor deposition ( cvd ), atomic layer deposition ( ald ), etc ., as known in the art . in fig5 , an etching to remove liner 170 from flat wafer surfaces and remove hard mask 124 at the bottom of openings 150 a - 150 c is conducted . the etching may include a sputter etchback or any anisotropic etch , and may be performed in situ during layer 170 deposition ( preferred ). next , layer 126 at the bottom of openings 152 a , 152 b is etched either as part of the etching of layer 170 or as a separate etching or sputtering step . in a next step , shown in fig6 , a first connector head area 154 a , 154 b is formed in first distal layer 106 such that each area 154 a , 154 b extends laterally beyond main body 152 a , 152 b . in the embodiment shown , each first connector head area 154 a , 154 b undercuts at least one cover layer 108 positioned over first distal layer 106 . this step may include conducting an isotropic etch , preferably in - situ in the sputter etchback chamber immediately after the sputter etchback is complete . that is , before any liner / seed / plating deposition used for metallization of the wires and vias occurs . if the dielectric to be etched is silicon - based , such as sicoh or porous sicoh , the etch may include , for example , a short diluted hydrofluoric acid ( dhf )( e . g ., 100 : 1h 2 o : hf ) wet etch . this isotropic etch would preferentially etch : first distal layer 106 ( i . e ., dielectric area 104 thereof ) forming an undercut of hard mask 126 or hard mask 126 forming an undercut , or a combination thereof . to achieve lateral etching of hard mask 126 , an etch selective to dielectric area 104 and other exposed hard masks 126 is employed . for example , if dielectric area 104 includes a low - k material such as silk , plasma etching containing one or more of hydrogen ( h 2 ), argon ( ar ), oxygen ( o 2 ) or nitrogen ( n 2 ), etc ., plasma , as known in the art , may be employed to laterally etch . if alternating hard mask materials are used , mutually exclusive etch processes between levels may be employed . in some circumstances , special processing may be necessary to adequately form first and second connector head areas 154 a , 154 b , 158 a , 158 b . for example , in the case that dielectric area 104 includes sicoh , etching to form areas 154 a , 154 b is difficult . in particular , sicoh has a low etch rate of approximately 7 angstroms / minute ( ang / min ), for example , using a diluted hydro - fluoric acid ( dhf ) solution . in order to address this problem , in an alternative embodiment shown in fig5 , an oxidization 180 may be applied to openings 150 a , 150 b to convert the sicoh to a more silicon - oxide - like material to increase an etch rate thereof , i . e ., the etch rate of sio in the same dhf solution is approximately 20 - 25 ang / min . in addition , where second distal layer 122 includes sicoh , this layer must be passivated or lined to protect it from the oxidative plasma , which could cause blowout in openings 150 a , 150 b in second distal layer 122 . in this case , a protective layer may be provided in openings 150 a , 150 b . the protective layer would be incident with the previously described liner 170 , shown in fig5 , and may be provided as any material capable of protecting layer 122 from the oxidation . in one embodiment , the protective layer may be provided as the previously described liner material . alternatively , a polymer deposition could be performed at the end of a reactive ion etch ( rie ) process shown in fig3 by using a plasma , e . g ., a cf 4 rich plasma , to line and protect openings 150 a , 150 b in second distal layer 122 during the oxidation step . in an alternative embodiment , an additional thin - film sub layer ( not shown ) may be employed , which might also double as an adhesion improvement layer for a subsequent layer , and also as an etch stop for chemical mechanical polishing ( cmp ) process that removes a hardmask . it should be recognized that certain dielectric materials ( e . g ., layers 106 , 122 in fig1 a )( e . g ., cvd sio or teos ) that may not require the above - described special processing may be used . however , these materials also present a higher dielectric constant , and thus are not the most desirable of materials . other more desirable dielectric materials , other than sicoh , include spin - on dielectrics such as methyl silsesquoixane ( msq ) available from jsr corp ., hydrogen silsesquoixane ( hsq )™ available from dow corning , or chemical vapor deposited ( cvd ) sicoh materials , silk ™ from dow chemical or porous silk ™. in the case that the fig2 embodiment is to be constructed , the opening forming step may include interconnecting at least two of the first connector head areas 154 a , 154 b , and / or interconnecting at least two of second connector head areas 158 a , 158 b . returning to fig1 a in conjunction with fig6 , as indicated above , one feature of the invention is that interlayer connectors 100 a , 100 b eliminate the need for white space fill above and below conventional via fill because connectors 100 a , 100 b are coplanar with the on device wiring 132 a , 132 b . that is , as shown in fig6 , openings 150 a , 150 b can either land on device areas with no wires below or partially on wires below , which provides a number of options in forming interlayer connectors 100 a , 100 b . for example , a main body 152 b ( fig6 ) may be partially landed on a wire 132 b in first distal layer 106 . in this case , first connector head area 154 b is formed from a non - landed part of main body 152 b . where wire 132 b is a current - carrying wire , an interlayer connector 100 b formed from opening 150 b may partly form a contact via when a metal is deposited in opening 150 b , and partly form an irremovable connector . that is , interlayer connector 100 b prevents delamination and may also acts as a contact via to a current - carrying wire 132 b . in this case , second connector head 120 is also an active current - carrying wire . alternatively , where wire 132 b is not a current - carrying wire ( i . e ., a dummy wire ), interlayer connector 100 b may simply provide an irremovable connector formed either by depositing a dielectric or a metal . in the later case , the metal is preferably of the same makeup as wire 132 b . in embodiments where wire 132 b is a dummy wire , second connector head 120 may be any shape ( e . g ., a bolt or a bar shape ) that is larger than the diameter of connector body 110 . where no wire is located below a main body 152 a , first connector head area 154 a may be formed anywhere about the bottom of main body 152 a . in this case , second connector head 120 is inactive , but may be sized to provide any necessary amount of fill . fill material for opening 150 a may be dielectric or metal . with continuing reference to fig1 a and 6 , it should be recognized that while particular embodiment for forming openings 150 a , 150 b have been described above , they may be formed using a dual damascene wiring using any known method , with the additional placement of interlayer connector openings in the via masks where they will fit . alternatively , openings 150 a , 150 b may be provided with any single damascene process for vias only , i . e ., without formation of opening 150 c . the opening forming step may be provided as part of forming contact via 112 ( fig1 )( from opening 150 c ) or fill structures ( not shown ), e . g ., wire fill or conventional via fill . the number of openings 150 a , 150 b that ultimately form connectors 100 a , 100 b can be user defined based , for example , on the amount of available space , the amount of delamination protection desired , etc . turning to fig7 , a second step of the method includes filling each opening 150 a , 150 b to form an interlayer connector 100 a , 100 b . this step may include depositing a metal or a dielectric 180 including any necessary liner materials ( not shown ). in terms of the former , the metal may be any desired metal where opening 150 a does not land on a wire 132 . if the opening 150 b partially lands on an opening , then the metal is preferably the same makeup as the wire 132 . where the wire is copper , conventional liner material ( e . g ., one or more of tan , wn , tin , run , tasin , etc . ), seed material ( preferably cu or al ) and copper ( cu ) plating depositions may be conducted . note that a conformal liner process , preferably chemical vapor deposition ( cvd ) or physical vapor deposition ( pvd ) with good step coverage in overhang structures is preferred , but not required . optional cvd cu deposition for seed , plating , or both could be employed to maximize metal fill of opening 150 b bottoms . a dielectric material may be used where interlayer connector 100 a does not to also function as a contact via . in terms of dielectric liner material , the material may include any dielectric having sufficient strength to withstand the expected delaminating stresses , such as silicon dioxide ( sio 2 ) deposited using a conformal plasma enhance cvd ( pecvd ), sub - atmospheric cvd ( scvd ), atmospheric cvd ( acvd ), thermal cvd ( thcvd ) or a spin - on process . subsequent processing , as shown in fig8 , may include customary finishing steps such as chemical mechanical polishing ( cmp ), reactive ion etching ( rie ) or wet etchback , or a combination of above , to remove the excess liner , metal , dielectric , etc ., from the wafer surface . fig9 illustrates application of the present invention across a plurality of wiring levels of a semiconductor device . in fig9 , current - carrying wires are indicated in black , and dummy wiring is indicated in gray . it should be recognized that main bodies 110 and connector heads 102 , although shown as separate parts , are actually integrally formed . while this invention has been described in conjunction with the specific embodiments outlined above , it is evident that many alternatives , modifications and variations will be apparent to those skilled in the art . accordingly , the embodiments of the invention as set forth above are intended to be illustrative , not limiting . various changes may be made without departing from the spirit and scope of the invention as defined in the following claims .