a method for reworking integrated circuit wafers having copper - metallized bond pads exposed in protective overcoat openings and one or more bondable metal layers deposited onto the bond pads by a technology which may produce some parts with off - spec or missing depositions . after identifying the wafer with off - spec metal layers , a layer of glass buffer is deposited over those wafers , which also fill any missing depositions at least partially . the glass - covered surface is then chemically - mechanically polished until the off - spec metal layers and at least portion of the protective overcoat are removed , without damaging the copper metallization . finally , a fresh layer of protective overcoat is deposited , selectively opened to expose the bond pads , and provided anew with one or more bondable metal layers . the slurry for the chemical - mechanical polishing contains oxidizing or hydroxylating agents as well as mechanical polishing components for metals which are not readily oxidized . in order to minimize undesired scratches of the underlying copper or dielectric layers , a combination of buffers and soft poromeric pads is used . alternatively , organic buffer layers can be used instead of the glass buffer .