an ic has cells placed in a cell row having a utbox - fdsoi pmosfet including a ground beneath the pmos , and an n - doped well beneath it and configured to apply a potential thereto , and a utbox - fdsoi nmosfet including a ground beneath the nmos , and a p - doped well beneath the ground and configured to apply a potential thereto , and cells , each including a utbox - fdsoi pmosfet including a ground beneath the pmos , and a p - doped well beneath the ground and configured to apply an electrical potential to the ground , and a utbox - fdsoi nmosfet including a ground beneath the nmos , and an n - doped well beneath the ground and configured to apply a potential thereto . the cells are placed so that pmos &# 39 ; s of standard cells belonging to a row align along it and a transition cell including a another well and contiguous with first row standard cells thus ensuring continuity with wells of those cells .