a semiconductor device includes : a transistor including source and drain diffusion - layers , a gate insulating film and a gate electrode ; first and second plugs formed in a first interlayer - insulating film and connected to the source and drain diffusion - layers , respectively ; a third plug extending through a second interlayer - insulating film and connected to the first plug ; a first interconnection - wire formed on the second interlayer - insulating film and connected to the third plug ; a second interconnection - wire formed on a third interlayer - insulating film and intersecting the first interconnection - wire ; a fourth interlayer - insulating film ; a hole extending through the fourth , third and second interlayer - insulating films , the hole being formed such that a side surface of the second interconnection - wire is exposed ; and a fourth plug filling the hole via an intervening dielectric film and connected to the second plug , wherein a capacitor is formed using the fourth plug , the second interconnection - wire and the dielectric film sandwiched therebetween .