a non - single - crystalline semiconductor material and a device utilizing the material , the material being of an intrinsic or substantially intrinsic conductivity type and including silicon and containing a dangling bond neutralizer consisting of hydrogen and / or a halogven wherein the concentration of carbon contained in the semiconductor material is less than 4 × 10 18 and the concentration of boron contained in the semiconductor material is not higher than 2 × 10 17 atoms / cm 3 .