an electrically erasable programmable read only memory cell includes cell selection circuitry and a storage cell for storing the informational state of the cell . the storage cell is an electro - mechanical data retention cell in which the physical positional state of a storage cell element represents the informational state of the cell . the storage cell element is a carbon nanotube switching element . the storage is writable with supply voltages used by said cell selection circuitry . the storage is writable and readable via said selection circuitry with write times and read times being within an order of magnitude . the write times and read times are substantially the same . the storage has no charge storage or no charge trapping .