a semiconductor based image sensor having a plurality of pixels formed on a surface of the image sensor , such that each of the pixels has a photodetector configured to collect majority carriers created from incident light ; a region within each of the photodetectors that is narrowed , the narrowed region of the photodetector being electrically coupled to a drain for the majority carriers ; a reset means ; a transistor for converting photo - charge to voltage or current . the narrowed region provides a path for excess photoelectrons in the photodetector to the drain . the narrow regions path to the drain , in the preferred embodiment , is that of the drain used for the adjacent transistor .