a semiconductor device includes a semiconductor substrate ; a buried insulator layer disposed on the semiconductor substrate , the buried insulator layer configured to retain an amount of charge in a plurality of charge traps in response to a radiation exposure by the semiconductor device ; a semiconductor layer disposed on the buried insulating layer ; a second insulator layer disposed on the semiconductor layer ; a gate conducting layer disposed on the second insulator layer ; and one or more side contacts electrically connected to the semiconductor layer . a method for radiation monitoring , the method includes applying a backgate voltage to a radiation monitor , the radiation monitor comprising a field effect transistor ; exposing the radiation monitor to radiation ; determining a change in a threshold voltage of the radiation monitor ; and determining an amount of radiation exposure based on the change in threshold voltage .