the present invention discloses a semiconductor film having a reduced dislocation density . the film comprises at least one interlayer structure , including a group iii - nitride layer , a passivation interlayer disposed on the group iii - nitride layer , interrupting the group iii - nitride layer , and an island growth interlayer disposed on the passivation interlayer , and interrupting the group iii - nitride layer . a method of making a semiconductor film of the present invention comprises producing a semiconductor film including at least one interlayer structure , each interlayer structure produced by the substeps of growing a group iii - nitride layer , depositing a passivation interlayer on the group iii - nitride layer , depositing an island growth interlayer on the passivation interlayer and continuing growing the group iii - nitride layer .