the present invention provides a unique a resistor formed on a semiconductor substrate . the resistor preferably comprises a first resistor layer that includes a first metal silicide , such as tungsten silicide , and nitrogen and that is formed on the substrate . the first layer has a first thickness and a concentration of nitrogen incorporated therein . the nitrogen concentration may be varied to obtain a desired resistive value of the resistor . thus , depending on the concentration of nitrogen , a wide range of resistive values may be achieved . the resistor further comprises a second resistor layer with a second thickness that includes a second metal silicide and that is formed on the first resistor layer . thus , the present invention provides a metal silicide - based resistor having nitrogen incorporated therein which allows the resistance of the resistor to be tailored to specific electrical applications . yet at the same time , the resistor is far less susceptible to temperature and voltage variation than conventional diffused resistors and , thereby , provides a more precise resistor .