a method for eliminating interlayer dielectric dishing and controlling gate height uniformity is provided . embodiments include forming a plurality of polysilicon gates over a substrate , each gate having spacers formed on sides of the polysilicon gates and a nitride cap formed on an upper surface ; forming a gapfill material between adjacent polysilicon gates ; forming an oxide over the gapfill material between the adjacent polysilicon gates ; removing the nitride caps ; removing a portion of the oxide between the adjacent polysilicon gates , forming a recess ; and forming an ild cap layer in the recess between the adjacent polysilicon gates .