a method for forming a nanowire tunnel field effect transistor device includes forming a nanowire connected to a first pad region and a second pad region , the nanowire including a core portion and a dielectric layer , forming a gate structure on the dielectric layer of the nanowire , forming a first protective spacer on portions of the nanowire , implanting ions in a first portion of the exposed nanowire and the first pad region , implanting in the dielectric layer of a second portion of the exposed nanowire and the second pad region , removing the dielectric layer from the second pad region and the second portion , removing the core portion of the second portion of the exposed nanowire to form a cavity , and epitaxially growing a doped semiconductor material in the cavity to connect the exposed cross sections of the nanowire to the second pad region .