according to embodiments of the present invention , a semiconductor substrate is formed on at least a portion of a surface of a semiconductor substrate . the emitting layer is excited for a first predetermined time period . a first luminescent intensity value of the emitting layer is determined . in response to exposing the semiconductor substrate and the emitting layer to a condition for a second predetermined time period , a second luminescent intensity value of the emitting layer is determined . a thermal profile of at least the portion of the surface of the semiconductor substrate is determined utilizing the first luminescent intensity value and the second luminescent intensity value of the emitting layer . the thermal profile at least reflects information about one or more of the condition and the semiconductor substrate subsequent to exposure to the condition .