a method for manufacturing thin film transistor panels in order to obviate the lowstability of conventional laser annealing processes , and the resultant low quality of the produced polycrystal silicon thin film . according to the method of the invention , form a transparent insulator on the front surface of a silicon substrate . form a thin film transistor structure and transparent electrode on the upper surface of the transparent insulator . bond a transparent substrate onto the front surface of the silicon substrate . after that , remove a portion of the silicon substrate by polishing or etching the back of the silicon substrate to obtained a transparent thin film transistor panel . the transparent electrode can also be formed on the bottom surface of the transparent insulator . also , the transparent substrate can be bonded onto the back of the silicon substrate . then reduce the thickness of the silicon substrate to generate a crystal silicon thin film . form a thin film transistor structure layer and the transparent electrode required by the thin film transistor panel on the crystal silicon thin film .