a dielectric insulation film consists of a metal oxide and pieces of dissimilar metal element added to the metal oxide . a positive charge number under an ionized state of the dissimilar metal element is smaller by one than that of the metal oxide . an ionic charge number of the dissimilar metal element is of a predetermined one kind . the dielectric insulation film is formed as an insulation film of capacitor of each cell of a semiconductor device according to a chemical vapor deposition method in the process of forming cells of the semiconductor device .