a manufacture method is provided for forming a semiconductor device . the method includes : forming a plurality of gate electrodes through etching a conductive film deposited on a semiconductor substrate ; forming a first nitride film to cover the gate electrodes ; partially exposing the semiconductor substrate in a region between adjacent two of the gate electrodes through performing an etch - back process on the first nitride film ; thermally oxidizing a residual of the gate electrode film remaining in the region between the adjacent two of the gate electrodes to change the residual into an thermal oxide film ; and forming a contact in the region between the adjacent two of the gate electrodes .