a semiconductor electronic device that includes a semiconductor substrate having a top surface ; a seed layer positioned on the substrate and having a notched wall extending transversely with respect to the substrate top surface , the wall defining a first recess extending into the seed layer with a height equal to a thickness of the seed layer ; a first conductive nanowire in contact with the notched wall , the first conductive nanowire having a contact portion extending into the first recess and covering opposite sidewalls and a bottom of the first recess ; a first insulating nanowire in contact with a sidewall of the first conductive nanowire ; an insulating layer on the contact portion of the first conductive nanowire and having a first window substantially in correspondence with the contact portion of the first conductive nanowire ; and a first conductive die on the insulating layer that includes a conductive contact extending into the first window and contacting the contact portion of the first conductive nanowire .