a method for generating alignment marks on the scribe lines in which alignment marks are generated only at oxide layers is described . an alignment mark is formed in an oxide layer on a scribe line of a wafer . the alignment mark is lined with a metal layer and filled with a dielectric layer which is planarized . the alignment mark is used in aligning a reticle to pattern the metal layer and is also used in aligning a reticle to pattern the dielectric layer wherein the step of lining the alignment mark with the metal layer protects the alignment mark .