a phase - change memory device and a method of fabricating the same are provided . the phase - change memory device includes a semiconductor substrate in which a word line is arranged , a diode line disposed over the word line and extending parallel to the word line , a phase - change line pattern disposed over the diode line , and a projection disposed between the diode line and the phase - change line pattern and protruding from the diode line . the diode line and the projection are formed of a single layer to be in continuity with each other .