disclosed is a method of fabricating a semiconductor device that includes field effect transistors each having a gate electrode formed only of a metal silicide which overcomes the problem of depletion of the gate and makes adjustment of a work function easier , and that has a high integration with the existing process and a high cost performance . the method fabricates a semiconductor substrate , a gate electrode formed on the semiconductor substrate via a gate insulating layer , and a source and a drain having an elevated structure with the gate electrode in between , and includes a step at which the gate electrode is silicidized to form a metal silicide .