a method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device . all or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms . aluminum deposited under these conditions tends to fill contact vias without the formation of voids . the low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber .