a dynamic random access memory includes a semiconductor substrate having an active region including first and second diffusion regions of a transfer transistor , an insulating layer formed on the semiconductor substrate and having first and second contact holes , and a stacked capacitor having a storage electrode which is electrically coupled to the first diffusion region through the first contact hole formed in the insulating layer and an opposed electrode . the dram also includes a word line electrically isolated from the semiconductor substrate , and a bit line electrically isolated from the semiconductor substrate and electrically coupled to the second diffusion region through the second contact hole formed in the insulating layer . the second contact hole is substantially positioned at a center of the bit line . the word line has a bent portion located between the first and second contact holes so that the word line is separated from the second contact hole at a predetermined distance .