a method of forming a resistive memory cell , e . g ., cbram or reram , includes forming a bottom electrode layer , forming an oxide region of an exposed area of the bottom electrode , removing a region of the bottom electrode layer proximate the oxide region to form a bottom electrode having a pointed tip or edge region . an electrically insulating mini - spacer region is formed adjacent the bottom electrode , and an electrolyte region and top electrode are formed over the bottom electrode and mini - spacer element to define a memory element . the memory element defines a conductive filament / vacancy chain path from the bottom electrode pointed tip region to the top electrode via the electrolyte region . the mini - spacer elements decreases the effective area , or “ confinement zone ,” for the conductive filament / vacancy chain path , which may improve the device characteristics , and may provide an improvement over techniques that rely on enhanced electric field forces .