a method for producing a semiconductor device provided with a fuse including the steps of forming a fuse layer on an insulating layer formed on a semiconductor substrate , forming an interrupting layer covering the fuse layer and the insulating layer , forming an insulating protective layer covering the interrupting layer , selectively etching the protective layer , so as to form a window , with a suitable etchant which does not etch the interrupting layer , and etching the exposed interrupting layer to complete the window by which a portion of the the fuse layer and a portion of the insulating layer are exposed . the insulating layer is not removed so that the reliability of the semiconductor device will not deteriorate .