provided is an information storage element comprising a first layer , an insulation layer coupled to the first layer , and a second layer coupled to the insulation layer opposite the first layer . the first layer is capable of storing information according to a magnetization state of a magnetic material . the insulation layer includes a non - magnetic material . the second layer includes a fixed magnetization . in an embodiment , the first layer has a transverse length that is approximately 45 nm or less and a volume that is approximately 2 , 390 nm 3 or less . in a further embodiment , the second layer includes mgo and is capable of allowing electrons passing through the second layer reach the first layer before the electrons enter a non - polarized state .