a method for fabricating a semiconductor device having a multilevel interconnection structure according to the present invention includes the steps of : covering a surface of a substrate with an insulating film ; depositing a conductive film on the insulating film ; forming a first interlevel dielectric film on the conductive film ; forming an interlevel contact hole in the first interlevel dielectric film so as to reach the conductive film ; filling in the interlevel contact hole with an interconnecting metal ; forming a masking layer , defining a pattern of a first interconnect layer , on the first interlevel dielectric film so as to cover at least part of the interconnecting metal ; forming the first interconnect layer out of the conductive film by etching the first interlevel dielectric film using the masking layer as a mask and by etching the conductive film using the masking layer and the interconnecting metal as a mask ; removing the masking layer ; depositing a second interlevel dielectric film over the substrate so as to cover the interconnecting metal and the first interconnect layer ; planarizing the second interlevel dielectric film , thereby exposing at least part of the interconnecting metal ; and forming a second interconnect layer to be electrically connected to an upper part of the interconnecting metal .