a method for fabricating an integrated circuit from a semiconductor substrate having formed thereon over a first portion of the semiconductor substrate a hard mask layer and having formed thereon over a second portion of the semiconductor substrate an oxide layer . the first portion and the second portion are electrically isolated by a shallow trench isolation feature . the method includes removing the oxide layer from over the second portion and recessing the surface region of the second portion by applying an ammonia - hydrogen peroxide - water solution to form a recessed surface region . the apm solution is provided in a concentration of ammonium to hydrogen peroxide ranging from about 1 : 1 to about 1 : 0 . 001 and in a concentration of ammonium to water ranging from about 1 : 1 to about 1 : 20 . the method further includes epitaxially growing a silicon - germanium layer on the recessed surface region .