the present invention relates to high aspect - ratio electrical connections , wiring trenches , and methods of forming the same in semiconductor devices . in particular , the present invention relates to formation of contacts with refractory metal and / or refractory metal nitride liners that assist in filling of the contacts . additionally disclosed is the combination of shallow junction fabrication and high aspect - ratio contact formation to form contacts between a shallow junction and microcircuitry wiring . more particularly , the present invention relates to aluminum filled contacts that fill contact corridors , trenches , or vias in semiconductor devices that are initially lined with a titanium layer and at least one other layer . preferred other layers include cvd , pvd , or reacted tin , co , ge , and si .