a method for forming conductor structures on a semiconductor wafer is provided . the method begins with depositing a seed layer having a substantially consistent thickness over a barrier layer that covers the features and the field regions among them . the process continues with electrodepositing a planar copper layer on the seed layer and subsequently electroetching it until a thinned seed layer remains over the field regions . when another layer of planar copper is deposited on the remaining copper in the features and on the thinned seed layer on the field regions , this structure minimizes stress related defects in the features which occur during a following anneal process .