a resist film consisting of 5 , 11 , 17 , 23 , 29 , 35 - hexachloromethyl - 37 , 38 , 39 , 40 , 41 , 42 - hexamethoxycalix 6 ! arene sensitive to a high - energy beam and soluble to a solvent is formed on a substrate etchable by a dry etching , has a selective region thereof exposed to the high - energy beam , with a remaining region unexposed thereto , and developed to define a pattern on the substrate , as the remaining region is removed by the solvent , before the substrate with the pattern is subjected to the dry etching . a nanometric patterning and etching is permitted , with a reduced process time .