the invention provides a method of producing structures from double layers composed of a metal silicide and polysilicon on a silicon substrate containing integrated semiconductor circuits in an operational plate reactor by reactive ion etching and with the use of a photosensitive resist mask on the double layer to define desired structures . the plate reactor is provided with a controlled reactive gas mixture which contains fluorine and chlorine . the double layer in preferred embodiments is composed of a tantalum silicide layer and a polysilicon layer . an insulating layer can be provided between the substrate and the double layer . the invention is useful for providing low - resistant interconnects in vlsi circuits .