a memory cell container of a dram semiconductor memory device and method for manufacturing the cell container are disclosed . the cell includes a container formed in a structural layer such as borophosphosilicate glass . the container is then lined with a polysilicon such as hemispherical grained polysilicon . a dielectric layer is deposited over the polysilicon layer . a barrier layer is deposited over the dielectric layer such that the opening of the container is covered but not the sidewalls or the bottom of the container . the cell is then oxidized and the barrier layer provides protection as an oxygen barrier during the oxidation or any following re - oxidation process .