image sensor devices and methods for fabricating the same are provided . an exemplary embodiment of an image sensor device comprises a support substrate . a passivation structure is formed over the support substrate . an interconnect structure is formed over the passivation structure . a first semiconductor layer is formed over the interconnect structure , having a first and second surfaces , wherein the first and second surfaces are opposing surfaces . at least one light - sensing device is formed over / in the first semiconductor layer from a first surface thereof . a color filter layer is formed over the first semiconductor layer from a second surface thereof . at least one micro lens is formed over the color filter layer .