a semiconductor device for preventing process - induced charging damages is disclosed . the semiconductor device comprises a semiconductor layer , at least one transistor comprising a source region , a drain region , a channel region , a gate oxide layer and a gate electrode , at least one parasitic capacitor comprising a conductive layer , a dummy conductive layer constituting a dummy pattern , and a dielectric layer interposed between the conductive layer and the dummy conductive layer , a first conductor connecting the gate electrode and the conductive layer , and a second conductor connecting the semiconductor layer and the dummy conductive layer . furthermore , the dummy conductive layer can be a floating layer over the semiconductor layer . in such manner , the second conductor set forth is replaced by an interposed dielectric layer .