an optical reduction system for use in the photolithographic manufacture of semiconductor devices having one or more quarter - wave plates operating near the long conjugate end . a quarter - wave plate after the reticle provides linearly polarized light at or near the beamsplitter . a quarter - wave plate before the reticle provides circularly polarized or generally unpolarized light at or near the reticle . additional quarter - wave plates are used to further reduce transmission loss and asymmetries from feature orientation . the optical reduction system provides a relatively high numerical aperture of 0 . 7 capable of patterning features smaller than 0 . 25 microns over a 26 mm × 5 mm field . the optical reduction system is thereby well adapted to a step and scan microlithographic exposure tool as used in semiconductor manufacturing . several other embodiments combine elements of different refracting power to widen the spectral bandwidth which can be achieved .