a drain loaded 1t1r resistive memory device and 1t1r resistive memory array are provided . the resistive memory array comprises an array of drain loaded 1t1r resistive memory device structures . word lines are connected across transistor gates , while a resistive elements are connected between transistor gates and bit lines . the resistive element comprises a material with a resistance that is changed electrically , for example using a sequence of electric pulses . the resistive element may comprise pcmo .