an apparatus for vapor deposition including a vapor deposition section to which at least one semiconductor material supply passage and at least one alkoxide material supply passage are connected , first heating means provided for the vapor deposition section and capable of maintaining the temperature thereof higher than that of the alkoxide supply passage , second heating means provided for the semiconductor material supply passage and capable of maintaining the temperature thereof higher than that of the vapor deposition section , and third heating means provided for the alkoxide material supply passage and capable of maintaining the temperature thereof constant , and a process for continuously forming a multilayered film on a substrate .