a semiconductor fabrication technique is provided for producing a low resistivity polycide . polycide resistivity is lowered by minimizing areas where the polycide is unduly thin . by preparing the polysilicon upper surface prior to polycide formation thereon , the polysilicon surface can grow polycide at a uniform rate across the entire polysilicon surface . the polysilicon surface is prepared by either restricting doping atoms at grain boundary locations at the polysilicon surface , or by disrupting the grain boundaries by ion implanting that surface . in either instance , a properly prepared polysilicon surface greatly enhances the conductivity of polycide grown thereon .