a bottom electrode structure and manufacturing method is described for producing crystallographically textured iridium electrodes for making textured pzt capacitors that enables enhanced ferroelectric memory performance . the use of seed layers originating from hexagonal crystal structures with texture provides a smooth surface for growth of textured iridium , which exhibits the face - centered cubic structure . this seeding technique results in textured iridium with a small surface roughness relative to the film thickness . the highly textured iridium supports textured pzt dielectric layer growth . textured pzt exhibits enhanced switched polarization , reduced operating voltage and also improves the reliability of pzt capacitors used in fram ® memory and other microelectronic devices .