the process produces a semiconductor body with a first region that has a self - aligning structure and with a further second region . the insulation layer lying on a semiconductor layer in the first region is fully removed in the second region using a photographic technique and a subsequent etching process . subsequently , or at the same time , the requisite structuring of the semiconductor layer and of the insulation layer is carried out in the first region . this leads to substantially lesser topography changes and steps and thus higher packing density in the further region of the semiconductor body .