a method for depositing an adhesion - promoting layer on a spatially bounded metallic layer of a silicon chip is provided . the adhesion - promoting layer is deposited , using at least one wet - chemical process . during the wet - chemical process , the concentration of an inhibitor of a multi - component process bath is checked in at least approximately continuous manner and adjusted to a constant value . the adjustment of the inhibitor concentration is independent of the adjustment of the concentrations of other process - bath components .