methods and compositions are disclosed for modifying a semiconductor interconnect layer to reduce migration problems while minimizing resistance increases induced by the modifications . one method features creating trenches in the interconnect layer and filling these trenches with compositions that are less susceptible to migration problems . the trenches may be filled using traditional vapor deposition methods , or electroplating , or alternately by using electroless plating methods . ion implantation may also be used as another method in modifying the interconnect layer . the methods and compositions for modifying interconnect layers may also be limited to the via / interconnect interface for improved performance . a thin seed layer may also be placed on the semiconductor substrate prior to applying the interconnect layer . this seed layer may also incorporate similar dopant and alloying materials in the otherwise pure metal .