a metal oxide semiconductor field effect transistor with a lightly doped silicon substrate includes an oppositely doped well and oppositely doped source region and oppositely doped drain region with respect to the lightly doped substrate , the improvement comprising at least one counter doped region formed along the surface of the oppositely doped well between the source and drain regions . the substrate comprises a p - substrate , the well comprises an n - well and the counter doped region is doped p ; the counterdoped region comprises an island among a plurality of islands between the source region and the drain region . the counterdoped region comprises an island among a plurality of islands between the source region and the drain region .