disclosed is a memory device including a memory layer retaining information thereon based on a magnetization state of a magnetic body , a fixed - magnetization layer having a fixed - magnetization direction formed on the memory layer through a non - magnetic layer , and two metal wiring lines formed adjacent to both ends of the fixed - magnetization layer , in the memory , the magnetization direction of the memory layer is changed by passing an electric current therethrough in a stacked direction to record the information on the memory layer .