resistive cross point memory devices are provided , along with methods of manufacture and use . the memory device comprises an active layer of perovskite material interposed between upper electrodes and lower electrodes . a bit region located within the active layer at the cross point of an upper electrode and a lower electrode has a resistivity that can change through a range of values in response to application of one , or more , voltage pulses . voltage pulses may be used to increase the resistivity of the bit region , decrease the resistivity of the bit region , or determine the resistivity of the bit region . memory circuits are provided to aid in the programming and read out of the bit region .