the present application discloses a method for manufacturing a semiconductor structure , comprising the steps of : a ) providing a p - type field effect transistor ; b ) forming a tensile - stressed layer on the p - type field effect transistor ; c ) removing a portion of the tensile - stressed layer , so that the remaining portion of the tensile - stressed layer generates compressive stress in the channel of the p - type field effect transistor ; and d ) performing annealing , so as to achieve the object of memorizing compressive stress in a channel of a transistor and improving the performance of the transistor . the method according to the present invention memorizes the compressive stress in the channel of the transistor by a stress memorization technique , increases mobility of holes , and improves overall performance of the semiconductor structure .