embodiments of the present invention provide a method of fabricating a contact structure in a layer of dielectric material between a semiconductor device and a back - end - of - line interconnect . the method includes creating at least one contact opening in said layer of dielectric material ; forming a first tin film through a chemical - vapor deposition process , said first tin film lining said contact opening ; and forming a second tin film through a physical vapor deposition process , said second tin film lining said first tin film . a contact structure fabricated according to embodiments of the invention is also provided .