a non - volatile semiconductor memory device includes an electrically data rewritable non - volatile semiconductor memory cell and a write circuit for writing data in the memory cell , the write circuit writing a data in the memory cells by supplying a write voltage vpgm and a write control voltage vbl to the memory cell , continuing the writing of the data in the memory cell by changing the value of the write control voltage vbl in response to an advent of a first write state of the memory cell and inhibiting any operation of writing a data to the memory cell by further changing the value of the write control voltage vbl to vdd in response to an advent of a second write state of the memory cell .