a process for fabricating mosfet devices , using a local interconnect structure , and silicon nitride capped , self - aligned contact openings , has been developed . the process features the creation of self - aligned contact openings , exposing specific source and drain regions . after deposition of a composite insulator layer , a second opening is formed in the composite insulator layer , again exposing various elements including the previously opened , specific source and drain regions . the formation of a local interconnect structure , filling the second opening , contacts , as well as interconnects , the specific source and drain regions .