a method for etching a polysilicon layer comprises the steps of providing a semiconductor wafer substrate assembly having at least first and second features therein in spaced relation to each other which define an opening therebetween . a blanket polysilicon is formed over the wafer assembly and within the opening . a patterned photoresist layer is formed over the polysilicon layer , then the polysilicon layer within the opening is etched with a first etch . subsequent to the first etch , the polysilicon with the opening is etched with a second etch comprising a halogen - containing gas flow rate of from about 35 sccm to about 65 sccm and an oxygen - containing gas flow rate of from about 12 sccm to about 15 . 6 sccm .