an image sensor having a plurality of pixels comprising a semiconductor material of a first conductivity type with at least two adjacent pixels , each of the pixels has a photodetector formed within the substrate and an electrical function that is shared between the adjacent pixels integrated within the adjacent pixels . the electrical function can be : a transfer gate , a reset gate , a row select gate , an amplifier drain , an output node , a floating diffusion , a reset drain , a lateral overflow gate , an overflow drain or an amplifier , that is shared between multiple pixels resulting in a saving of space .