the present invention teaches a method of forming a mosfet transistor having a silicide gate which is not subject to problems produced by etching a metal containing layer when forming the gate stack structure . a gate stack is formed over a semiconductor substrate comprising a gate oxide layer , a conducting layer , and a first insulating layer . sidewall spacers are formed adjacent to the sides of the gate stack structure and a third insulating layer is formed over the gate stack and substrate . the third insulating layer and first insulating layer are removed to expose the conducting layer and , at least one unetched metal - containing layer is formed over and in contact with the conducting layer . the gate stack structure then undergoes a siliciding process with different variations to finally form a silicide gate .