a multilayer structure composed of a plurality of substrates stacked in layers is provided with a cavity formed by partially removing some of the substrates . a semiconductor chip internally provided with an active component such as an fet is mounted on the bottom face of the cavity . passive components including a high - frequency matching circuit and a bias circuit are distributed in the uppermost layer , lowermost layer , and middle layer lying between the substrates of the multilayer structure . for example , a chip component partially composing the high - frequency matching circuit is disposed in the uppermost layer , while the bias circuit is disposed in the middle layer . since only a reduced number of substrates underlie the semiconductor chip internally provided with the active component primarily serving as a heating element , an excellent heat dissipating ability is retained even when each of the substrates of the multilayer structure is composed of a versatile material such as alumina . by utilizing the characteristic , there can be implemented a high - frequency integrated circuit device exhibiting a high degree of integration and usable in mobile communication such as a portable telephone .