a method for fabricating a capacitor having a fin - shaped electrode on a dynamic random access memory cell having increased capacitance was achieved . the capacitor is fabricated on a silicon substrate having an active device region . the device region contains a metal - oxide - semiconductor field effect transistor , having one capacitor aligned over and contacting the source / drain of the mosfet in the device region . the capacitor is increased in capacitance by forming a multi - layer insulator structure over the storage capacitor area and recessing alternate layers , then using the form as a mold for forming a fin - like bottom capacitor electrode . a high dielectric constant insulator is deposited on the bottom electrode as the inter - electrode dielectric . the top capacitor electrode is formed by depositing a doped polysilicon layer which also fills the recesses having the bottom electrode forming therein fin - shaped top capacitor electrode and completing a dynamic random access memory cell . this method also eliminates the need to plasma etch to the source / drain contact during the fabrication of the capacitor , thereby improving reliability and making a more manufacturable process .