in a non - volatile semiconductor memory device including a source region separated from a drain region by a channel region and with an electrically floating gate electrode spaced from and overlying the channel region , a flexible member is spaced from the floating gate and capable of being flexed towards the floating gate for depositing or removing electrical charge on the floating gate in response to a voltage potential between the flexible member and the channel region . in one embodiment , the flexible member comprises a contact gate electrode . in another embodiment , only a single gate electrode is employed without a separate floating gate .