a semiconductor memory device is provided , which makes it possible to increase the capacitance of capacitors in the capacitor section without degrading the withstand voltage of the capacitor dielectric . this device comprises a memory cell section including floating - gate type transistors and a capacitor section including capacitors . the memory cell section and the capacitor section are formed on a semiconductor substrate . each of the transistors has a first gate dielectric , a floating gate , a second gage dielectric , and a control gate . each of the capacitors has a lower electrode , a capacitor dielectric , and an upper electrode . a first part of the capacitors is / are designed to be applied with a first voltage and a second part thereof is / are applied with a second voltage on operation , where the first voltage is lower than the second voltage . each of the first part of the capacitors has a recess formed on the lower electrode , thereby increasing its capacitance .