a method for forming a dielectric - constant - enhanced capacitor is provided . a wafer in a reaction chamber is provided , wherein said wafer comprises a first conductive layer . then , a first dielectric layer is formed above said first conductive layer to prevent said first conductive layer from growing silicon oxide and to diminish leakage current . next a precursor is transmitted to a vaporizer . then said precursor is transformed to a gas and said gas is transmitted to said reaction chamber . next , a second dielectric layer is deposited above said first dielectric layer . then a heat treatment is proceeded and a second conductive layer is formed on said second dielectric layer .