a method for dry - etching a polycide film composed of a double layer film of a polysilicon film provided on a semiconductor substrate and a metal silicide film provided on said polysilicon film according to the present invention comprises the steps of : a first etching step for etching said silicide film with a first etching gas containing no fluorine - based gasses using a photoresist film as a mask , and a second etching step for etching said polysilicon film with a second etching gas not containing chloride gas and fluorine gas using said patterned metal silicide film and said photoresist film remaining on said metal silicide film after said first etching step as a mask .