an etching process for the patterning of electrodes and a ferroelectric dielectric layer in a ferroelectric capacitor , which is formed in a semiconductor device , is disclosed . a series of overlying layers including a first electrode layer , a ferroelectric layer , and a second electrode layer are etched to form a ferroelectric capacitor on a semiconductor substrate . the second electrode layer is selectively etched in a first aqueous solution containing hydrochloric acid , nitric acid , and a metal etching compound comprised of phosphoric acid , nitric acid , and acetic acid . the ferroelectric layer is selectively etched in a second aqueous solution containing hydrogen peroxide , hydrofluoric acid , and nitric acid . the etch rate of the ferroelectric layer in the second aqueous solution is controlled by selection of the relative concentration of the chemicals used to form the solution . the wet chemical etching process of the invention can be combined with a dry etching process for the purpose of removing dry etch residue following formation of the ferroelectric capacitor .