the invention disclosed herein concerns technology that ensures , in a projection exposure process using a transmission type reticle , exposure with an even finish size throughout the entire exposure region , without adverse influence of external disturbance light such as back - surface reflection , for example . specifically , the invention provides a reticle , a semiconductor exposure apparatus and method , and a semiconductor device manufacturing method , wherein a reticle used there includes a pattern region in which a circuit pattern is formed , a light blocking region of a width d formed at an outside periphery of the pattern region , and an anti - reflection film formed on a surface of the reticle remote from the pattern region , wherein the width d of the light blocking film satisfies a relation d ≤ 2 ⁢ t · tan ⁢ } where n 1 is a refractive index of a medium at a light entrance side of the reticle , n 2 is a refractive index of the reticle , t is a thickness of the reticle , and θ is an incidence angle of light upon the reticle .