according to the present invention , there is provided a semiconductor device having : first and second fins formed on a semiconductor substrate to oppose each other , and made of a semiconductor layer ; an active region which is formed on the semiconductor substrate so as to be connected to the first and second fins , and supplies a predetermined voltage to the first and second fins ; and a gate electrode formed on an insulating film formed on the semiconductor substrate , in a position separated from the active region by a predetermined spacing , so as to cross the first and second fins , wherein in the active region , a predetermined portion between a first portion connected to the first fin and a second portion connected to the second fin is removed .