a sputtered low copper concentration multilayered , device interconnect metallurgy structure is disclosed herein . the interconnect metallization structure comprises a sputtered aluminum - copper weight percent copper conductor . in the preferred embodiment , the alcu conductor has formed on one or both of its surfaces a layer of an intermetallic compound formed from a group iva metal and aluminum . the group iva metal is deposited by sputtering . optionally , onto said top intermetallic layer is further deposited a non - reflective , non - corrosive , etch - stop , capping layer .