an image sensor includes a plurality of unit pixels for sensing a light beam to generate an image data . each of the unit pixels includes , a photoelectric element for sensing a light beam incident thereto and generating photoelectric charges , a transistor including a gate dielectric formed adjacent to the photoelectric element and a gate electrode formed on top of the gate dielectric and a capacitor structure including an insulating film formed on a portion of the photoelectric element and a bottom electrode , wherein the insulating film and the gate dielectric are made of a same material and the bottom electrode and the gate electrode are made of a same material .