charge coupled device solid - state image sensors comprise a substrate including a plurality of sensor groups . each sensor group consists of n photodiodes and 2n + 1 transfer electrodes , where n is at least two . by providing , for example , two photodiodes and five transfer electrodes in a group , improved area efficiency may be provided along with efficient manufacturing and driving . three insulated patterned conductive layers are formed on a gate insulating layer , to define the first through fifth transfer electrodes on the transfer region .