a process for producing an improved non - volatile storage cell of the metal - ferroelectric - semiconductor type is provided . the non - volatile storage cell has at least one metal - ferroelectric - semiconductor transistor formed in a semiconductor substrate and having a source , a drain , and a gate . the gate is insulated from the source and the drain by a ferroelectric layer . the transistor has at least one lateral programming electrode in contact with the ferroelectric layer and insulated from the gate . in a preferred embodiment the cell also has a dielectric layer interposed between the ferroelectric layer and the substrate . particular utility for the present invention is found in the area of static memory devices , although other utilities are contemplated .