a method of fabricating a semiconductor structure provided with a plurality of gated - diodes having a silicided anode and cathode and a high - k gate stack made of non - silicided gate material , the gated - diodes being adjacent to fets , each of which having a silicided source , a silicided drain and a silicided hik gate stack . the semiconductor structure eliminates a cap removal rie in a gate first high - k metal gate flow from the region of the gated - diode . the lack of silicide and the presence of a nitride barrier on the gate of the diode are preferably made during the gate first process flow . the absence of the cap removal rie is beneficial in that diffusions of the diode are not subjected to the cap removal rie , which avoids damage and allows retaining its highly ideal junction characteristics .