the present disclosure relates to the microelectronics field , and particularly , to a metal oxide resistive switching memory and a method for manufacturing the same . the method may comprise : forming a w - plug lower electrode above a mos device ; sequentially forming a cap layer , a first dielectric layer , and an etching block layer on the w - plug lower electrode ; etching the etching block layer , the first dielectric layer , and the cap layer to form a groove for a first level of metal wiring ; sequentially forming a metal oxide layer , an upper electrode layer , and a composite layer of a diffusion block layer / a seed copper layer / a plated copper layer in the groove for the first level of metal wiring ; patterning the upper electrode layer and the composite layer by cmp , to form a memory cell and the first level of metal wiring in the groove in the first dielectric layer ; and performing subsequent processes to complete the metal oxide resistive switching memory . according to the present disclosure , the manufacture process can be simplified , without incorporating additional exposure steps in the standard process , resulting in advantages such as reduced cost .