a semiconductor structure with a backside protective layer and backside probes and a method for constructing the structure . consistent with one embodiment of the invention , the semiconductor structure comprises a substrate having a first surface , on which a circuit interconnect layer is formed , and a second surface . a protective layer is formed on the second surface of the substrate , wherein the protective layer is non - reactive with gas used to etch the substrate . an electrically conductive probe extends from the protective layer through the substrate to an active region which is disposed in the substrate .