a method is disclosed of forming a bonding pad that is immune to imd cracking . a partially processed semiconductor wafer is provided having all metal levels completed . a blank dielectric layer is formed over the uppermost metal level . patterning and etching said dielectric layer horizontal and vertical arrays of trenches are formed passing through the dielectric layer and separating the dielectric layer into cells . the trenches are filled with a conducting material and , after performing cmp , bonding metal patterns are deposited . wires are bonded onto said bonding metal patterns , after which a passivation layer is formed .