a method of forming field effect transistors and on integrated circuit chips with the fets . channel placeholders at fet locations are undercut at each end of fet channels . source / drain regions adjacent to each channel placeholder extend into and fill the undercut . the channel placeholder is opened to expose channel surface under each channel placeholder . source / drain extensions are formed under each channel placeholder , adjacent to each source / drain region . after removing the channel placeholders metal gates are formed over each said fet channel .