a method of manufacturing a thin film transistor array panel is provided , the method includes : forming a gate line on a substrate ; forming a gate insulating layer on the gate line ; depositing an ito layer at a temperature of about 20 - 35 ° c . ; etching the ito layer to form a data line and a drain electrode on the gate insulating layer ; and forming an organic semiconductor on the data line , the drain electrode , and the gate insulating layer .