a method of programming and erasing an electrically erasable programmable read - only memory device includes performing a band - to - band tunneling induced hot - electrons program and performing a fowler - nordheim tunneling erase . the eepeom device includes a p - type transistor , an n - type transistor , and a double gate p - type transistor . a source of the p - type transistor and the n - type transistor are respectively electrically connected to a program bit - line and an erase bit - line . a drain of the double gate p - type transistor is electrically connected to a drain of the p - type transistor and a drain of the n - type transistor .