disclosed is a multilayer capacitor structure in an integrated circuit , including a first electrode constructed by forming at least one layer over a substrate and forming a plate layer over the previous layer . a dielectric layer is formed over this first electrode , and a second electrode is established over the dielectric layer by forming a plate layer over the dielectric layer , and forming at least one additional layer over the plate layer . each layer may serve one or more functions . also disclosed is a further embodiment including constructing a first electrode by forming at least one layer on a substrate , forming a plate layer over the previous layer , and forming a dielectric layer over the first electrode . the resulting structure is then heated , preferably in an oxygen ambient , to oxidize the lower layer . a second electrode can then be formed over the dielectric layer .