a process and system for connecting a semiconductor chip to a substrate is provided . the process includes providing the substrate that is configured to receive the semiconductor chip that has a bonding pad . the substrate has a first side that is suited to be connected to the semiconductor chip and a second side that is opposite the first side . the process then includes designing a metallization bonding structure on the first side of the substrate . the metallization bonding structure has a first end , a second end , and a bend defined between the first end and the second end . then , an oxide passivation layer is defined over the first side that includes the metallization bonding structure . a bonding via is then defined through the passivation layer . the bonding via is configured to be aligned with the bend of the metallization bonding structure . the semiconductor chip is then joined to the oxide passivation layer , such that the bonding pad is aligned with the bonding via and the bend of the metallization bonding structure . the process further includes the application of a current between the first end and the second end of the metallization bonding structure . the applied current is configured to cause a flow of electrons in an opposite direction of the current and a flow of metallization atoms in the metallization bonding structure toward the bend and into the bonding via . a reliable conductive bond between the substrate and the bonding pad of the semiconductor chip is thus established without the need for wire bonds or solder bumps .