the object to provide a highly - integrated sgt - based sram is achieved by forming an sram using an inverter which comprises a first island - shaped semiconductor layer , a first gate dielectric film in contact with a periphery of the first island - shaped semiconductor layer , a first gate electrode having one surface in contact with the first gate dielectric film , a second gate dielectric film in contact with another surface of the first gate electrode , a first arc - shaped semiconductor layer in contact with the second gate dielectric film , a first first - conductive - type high - concentration semiconductor layer arranged on a top of the first island - shaped semiconductor layer , a second first - conductive - type high - concentration semiconductor layer arranged underneath the first island - shaped semiconductor layer , a first second - conductive - type high - concentration semiconductor layer arranged on a top of the first arc - shaped semiconductor layer , and a second second - conductive - type high - concentration semiconductor layer arranged underneath the first arc - shaped semiconductor layer .