a hybrid memory device combines a ferromagnetic layer and a hall effect device . the ferromagnetic layer is magnetically coupled to a portion of a hall plate , and when such plate is appropriately biased , a hall effect signal can be generated whose value is directly related to the magnetization state of the ferromagnetic layer . the magnetization state of the ferromagnetic layer can be set to correspond to different values of a data item to be stored in the hybrid memory device . the magnetization state is non - volatile , and a write circuit can be coupled to the ferromagnetic layer to reset or change the magnetization state to a different value . the memory device can also be fabricated to include an associated transistor that functions as an isolation element to reduce cross - talk and as a selector for the output of the device when such is used in a memory array . this latter arrangement also permits a bias supply to be applied to each cell in the array , increasing the output signal level , and the signal to noise ratio . a high resistance element such as a resistor or diode can also be used as the isolation element depending on the particular application . in a preferred embodiment , the hybrid memory device and associated selector are combined and integrally fabricated using conventional semiconductor processing techniques to increase the integration density of memory arrays using such devices .