a semiconductor memory device precharges io lines of the device rapidly at a write interrupt in normal and full page modes . the device includes a write interrupt detector , a precharge signal generator , and a precharge circuit . the write interrupt detector detects whether signals indicating a write interrupt in the normal mode are from the outside , and then generates a write interrupt detection signal . the precharge signal generator generates first and second precharge signals in response to the write interrupt detection signal , and the precharge circuit precharges io lines at both sides of a memory cell array of the device before a read or write operation in the normal mode in response to the first and second precharge signals . since the address access time of the semiconductor memory device is short , a high - speed semiconductor memory device can be implemented using the present invention .