an improved multi - bit memory cell includes a storage capacitor and a switching element coupled to one of the terminals of the capacitor . the switching element includes a first switching component having a positive threshold , and a complementary switching component having a negative threshold . because the switching element is constructed in this manner , noise generation caused by activation of the switching components is significantly reduced , and cut - off effects are eliminated . both of these factors contribute to the memory cell &# 39 ; s ability to store more bits of information than prior art memory cells .