a trenched field effect transistor is provided that includes a semiconductor substrate , a trench extending a predetermined depth into the semiconductor substrate , a pair of doped source junctions , positioned on opposite sides of the trench , a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench , the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench , and a doped well surrounding the heavy body beneath the heavy body .