a semiconductor component includes a semiconductor body having a substrate of a first conduction type and a first layer of a second conduction type that is located above the substrate . a channel zone of the first conduction type is formed in the first layer . a first terminal zone of the second conduction type is configured adjacent the channel zone . a second terminal zone of the first conduction type is formed in the first layer . compensation zones of the first conduction type are formed in the first layer . a second layer of the second conduction type is configured between the substrate and the compensation zones .