a gallium arsenide monolithic microwave integrated circuit amplifier comprising a first stage having a common gate field effect transistor to provide matching of the input impedance , a second stage having a common source field effect transistor to provide class a gain , and a third stage having a common source open drain field effect transistor to provide class b gain for the amplifier . this monolithic integrated circuit amplifier provides a gain of greater than 25 decibels over a frequency band of 400 hz - 1 . 5 ghz .