this invention proposes a stable magnetic memory device that is equipped with a storage cell having a mtj , wherein variation in the coercive force of a ferromagnetic free layer is suppressed , and a switching characteristic of a bit of a mram is improved , and there is no write error . namely in a magnetic memory device equipped with a first wiring , a second wiring intersecting with the first wiring , and a storage cell for writing / reading information of a magnetic spin at an intersecting area of the first wiring and the second wiring , a partial sidewall portion electrically connecting to the storage cell of the second wiring has a forward tapered form having a contact angle relative to a top surface of the storage cell being 45 degrees or more .