an integrated circuit is disclosed having a semiconductor component comprising a first p - type region and a first n - type region adjoining the first p - type region , which together form a first pn junction having a breakdown voltage . a further n - type region adjoining the first p - type region or a further p - type region adjoining the first n - type region is provided , the first p - type or n - type region and the further n - type or p - type region adjoining the latter together forming a further pn junction having a further breakdown voltage , the first pn junction and the further pn junction being connected or connectable to one another in such a way that , in the case of an overloading of the semiconductor component , on account of a current loading of the first pn junction , first of all the further pn junction breaks down .