a general object of the present invention is to provide a semiconductor device having a stress transducer in which a temperature dependency of sensitivity of the stress transducer which utilizes a piezo resistance effect to transduce stress into an electric signal , and variations in sensitivity of several semiconductor devices can be corrected . the semiconductor device includes a reference voltage source which has a temperature dependency in accordance with a temperature characteristic of sensitivity of the stress transducer which has an electrical bridge circuit exhibiting a piezo resistance effect , and a voltage transducer having resistances and an operational amplifier . voltage transduced by the voltage transducer is adjusted so as to correct variations in sensitivity of several semiconductor devices .