the present invention is a structure for a fast - dump gate and a fast - dump drain for a charge coupled device . it is envisioned that the charge coupled device be a horizontal readout register of a solid - state image sensor . this structure uses a third layer of polysilicon to form the fast - dump gate which is in addition to the other two layers of gate material used to form the gates in the horizontal readout register . this allows the channel region under the fast - dump gate to form without the use of highly - doped channel stop regions thereby eliminating any potential wells or barriers that may result in transfer inefficiency often time found with other structures .