disclosed is a semiconductor integrated circuit device comprising a protective circuit including a mosfet which is connected directly to a bonding pad and which is connected in the form of a diode , and a resistor which is connected to the bonding pad at a stage posterior to the mosfet . a drain region of the mosfet is connected to the bonding pad , and has a large area of at least a certain fixed value in order to raise a voltage at which a p - n junction is destroyed .