the present invention provides a photomask including a field which attenuates exposure light and causes the exposure light passed therethrough to have the same phase as that of exposure light passed through a main pattern for transfer , and a rim pattern which causes exposure light to be transmitted through the rim region of the main pattern and causes the exposure light passed therethrough to have an opposite phase to that of the transmitted light from the main pattern . use of this photomask makes it possible to provide a photomask and a semiconductor device manufacturing method which have a practical resolution applicable to 65 - nm nodes , have no defect , and can be subjected to defect inspections .