a fusible link device and a method of making same . the fusible link device comprising a poly layer having a center undoped portion and two doped end portions . the center undoped portion having a first resistance and the two doped end portions each having a second resistance that is lower than the first resistance . a silicide layer is formed over the poly layer with the silicide layer having a third resistance lower than the second resistance . the silicide layer agglomerating to form an electrical discontinuity within a discontinuity area in response to a predetermined programming potential being applied across the silicide layer , such that the resistance of the fusible link device can be selectively increased . the agglomeration of the silicide layer occurring over the center undoped portion of the poly layer . contacts are electrically coupled to the two doped poly layer end portions for receiving the programming potential .