a method for producing a semiconductor device including the steps of forming an insulating layer on a semiconductor substrate ; forming a first layer of an electrode material on the insulating layer ; introducing impurities into the semiconductor substrate through the first layer of the electrode material and the insulating layer by using an ion implanting process ; forming a second layer of an electrode material on the first layer thereof ; and forming on the impurity region an electrode pattern consisting of the first and the second layer of the electrode material and having the insulating layer below it by selectively etching the second and the first layer of the electrode material .