the invention provides a method for cutting out very small sized semiconductor devices , mounted on a gold base , including the formation of depth indicators etched through the active layer , on a manufacturing wafer , and penetrating into the substrate , said indicators being metallized then , after masking , the gold bases are deposited . a mechanical metal support makes it possible to thin down the substrate and to etch the mesa diodes on their gold bases , the metal of the mechanical support then being etched by an acid solution which cuts out the diodes .