an integrated circuit is provided . in one implementation , the integrated circuit includes a first standard cell , comprising at least one first pmos transistor disposed in a first row in a semiconductor substrate and at least one first nmos transistor disposed in a first area of a second row in the semiconductor substrate , and a second standard cell , comprising a plurality of second pmos transistors disposed in the first row and a third row in the semiconductor substrate and a plurality of second nmos transistors disposed in a second area of the second row in the semiconductor substrate , wherein the second row is adjacent to the first and third rows and arranged between the first and third rows .