a field effect transistor includes a substrate having a doping of a first conductivity type , a drain area in the substrate having a doping of a second conductivity type oppposite the first conductivity type , a source area in the substrate being laterally spaced from the drain area and having a doping of the second conductivity type , and a channel area in the substrate that is arranged between the source area and the drain area . in a portion of the substrate bordering the drain area , an area having a doping of the second conductivity type , which is connected to the drain area , is arranged such that in the portion alternating regions having the first conductivity type and having the second conductivity type are arranged .