disclosed herein is a nonvolatile semiconductor memory device including : a first selection transistor configured to be connected to a bit line ; a second selection transistor configured to be connected to a common source line ; a memory cell configured to be connected in series between the first and second selection transistors ; and writing means for carrying out writing for a selected memory cell . in the nonvolatile semiconductor memory device , the writing means applies a potential yielding a writing - blocked state via a bit line to a memory cell for which writing is not to be carried out , of a memory cell selected for writing , and the writing means carries out writing for a writing - target memory cell in a state in which a bit line has a bit line potential state dependent upon a threshold value state of the writing - target memory cell .