in order to simulate , using a computer , a profile of sputter deposition on a contact hole formed on a semiconductor wafer , a plurality of trajectories of particles emitted from a sputter target are calculated . one of the trajectories is directed to a first coordinate point which is included in the profile of sputter deposition and with which an amount of sputter deposition is calculated . thereafter , a plurality of shadow judgment planes are successively defined with respect to all coordinate points , after which a check is made to determine if the above mentioned one of the plurality of trajectories crosses each of said plurality of shadow judgment planes .