integrated circuitry capacitors and methods of forming the same are described . in accordance with one implementation , a capacitor plate is formed and a conductive layer of material is formed thereover . preferably , the conductive layer of material is more conductive than the material from which the capacitor plate is formed . in a preferred implementation , the conductive layer of material comprises a titanium or titanium - containing layer . in another preferred implementation , the capacitor plate comprises an inner capacitor plate having an outer surface with a generally roughened surface area . in one aspect of this implementation , the roughened surface area comprises hemispherical grain polysilicon . capacitors formed in accordance with the invention are particularly well suited for use in dynamic random access memory circuitry .