a semiconductor device on a semiconductor wafer , wherein improvements are realized to agglomeration control , resistivity , and thermal stability of a titanium disilicide layer on a polysilicon layer . agglomeration control is achieved through the use of two carefully selected low dose barrier diffusion matrix implants into the polysilicon layer , one of which is situated at an interface between the layer of polysilicon and the resultant layer of titanium disilicide film after heat treatment , and the other of which is near the surface of the resultant layer of titanium disilicide film after heat treatment .