a method of manufacturing a semiconductor device includes forming a wiring layer in a first insulating layer , forming a second insulating layer over the first insulating layer , forming a first conductive layer over the second insulating layer , forming a dielectric layer on the first conductive layer , forming a second conductive layer on the dielectric layer , selectively removing the second conductive layer to form an upper electrode on the dielectric layer , forming a first layer over the upper electrode and the dielectric layer , selectively removing the first layer , the dielectric layer , and the first conductive layer to form a lower electrode over which the dielectric layer and the first layer is entirely left , the upper electrode remaining partially over the lower electrode .