a semiconductor capacitor and method of fabrication is disclosed . a mim stack , having alternating first - type and second - type metal layers is formed in a deep cavity . the entire stack can be planarized , and then patterned to expose a first area , and selectively etched to recess all first metal layers within the first area . a second selective etch is performed to recess all second metal layers within a second area . the etched recesses can be backfilled with dielectric . separate electrodes can be formed ; a first electrode formed in said first area and contacting all of said second - type metal layers and none of said first - type metal layers , and a second electrode formed in said second area and contacting all of said first - type metal layers and none of said second - type metal layers .