a method for growing silicon single crystal uses as materials , silicon granules prepared by the silane process and having a residual hydrogen concentration of 7 . 5 wtppm or less , silicon granules prepared by the trichlorosilane process and having a residual chlorine concentration of 15 wtppm or less . in the case where such silicon granules are used , a bursting phenomenon does not occur when the silicon granules are melted . as a result , there is no scattered matter due to the bursting phenomenon , whereby the growth condition of the single crystal is not disturbed .