the invention is directed to qcm measurements in monitoring ald processes . previously , significant barriers remain in the ald processes and accurate execution . to turn this exclusively dedicated in situ technique into a routine characterization method , an integral qcm fixture was developed . this new design is easily implemented on a variety of ald tools , allows rapid sample exchange , prevents backside deposition , and minimizes both the footprint and flow disturbance . unlike previous qcm designs , the fast thermal equilibration enables tasks such as temperature - dependent studies and ex situ sample exchange , further highlighting the feasibility of this qcm design for day - to - day use . finally , the in situ mapping of thin film growth rates across the ald reactor was demonstrated in a popular commercial tool operating in both continuous and quasi - static ald modes .