metallic silicide films are formed on silicon substrates by contacting the substrates with a low - energy ion beam of metal ions while moderately heating the substrate . the heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon . the metallic silicide films provided by the present invention are contaminant free , of uniform stoichiometry , large grain size , and exhibit low resistivity values which are of particular usefulness for integrated circuit production .