a vertical gan - based led and a method of manufacturing the same are provided . the vertical gan - based led can prevent the damage of an n - type gan layer contacting an n - type electrode , thereby stably securing the contact resistance of the n - electrode . the vertical gan - based led includes : a support layer ; a p - electrode formed on the support layer ; a p - type gan layer formed on the p - electrode ; an active layer formed on the p - type gan layer ; an n - type gan layer for an n - type electrode contact , formed on the active layer ; an etch stop layer formed on the n - type gan layer to expose a portion of the n - type gan layer ; and an n - electrode formed on the n - type gan layer exposed by the etch stop layer .