a process for removing photoresist from semiconductor wafers is disclosed wherein at least one semiconductor wafer having at least one layer of photoresist is positioned in a process tank ; ozone gas is provided to said process tank ; and said semiconductor wafer is spayed with a mixture of ozone and deionized water via at least one nozzle . the temperature during the process is maintained at or above ambient temperature . the ozone gas supplied to the tank is preferably under pressure within said process tank and the nozzles preferably spray the mixture of deionized water and ozone at a nozzle pressure between 5 and 10 atmospheres . in another embodiment , the invention is an apparatus for carrying out the process .