the use of a conductive bidimensional perovskite as an interface between a silicon , metal , or amorphous oxide substrate and an insulating perovskite deposited by epitaxy , as well as an integrated circuit and its manufacturing process comprising a layer of an insulating perovskite deposited by epitaxy to form the dielectric of capacitive elements having at least an electrode formed of a conductive bidimensional perovskite forming an interface between said dielectric and an underlying silicon , metal , or amorphous oxide substrate .