difference between planck constant and reduced planck constant
Planck constant In applications where it is natural to use the angular frequency (i.e. where the frequency is expressed in terms of radians per second instead of cycles per second or hertz) it is often useful to absorb a factor of 2π into the Planck constant. The resulting constant is called the reduced Planck constant. It is equal to the Planck constant divided by 2π, and is denoted ħ (pronounced "h-bar"):
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CMOS CMOS circuits are constructed in such a way that all P-type metal-oxide-semiconductor (PMOS) transistors must have either an input from the voltage source or from another PMOS transistor. Similarly, all NMOS transistors must have either an input from ground or from another NMOS transistor. The composition of a PMOS transistor creates low resistance between its source and drain contacts when a low gate voltage is applied and high resistance when a high gate voltage is applied. On the other hand, the composition of an NMOS transistor creates high resistance between source and drain when a low gate voltage is applied and low resistance when a high gate voltage is applied. CMOS accomplishes current reduction by complementing every nMOSFET with a pMOSFET and connecting both gates and both drains together. A high voltage on the gates will cause the nMOSFET to conduct and the pMOSFET not to conduct, while a low voltage on the gates causes the reverse. This arrangement greatly reduces power consumption and heat generation. However, during the switching time, both MOSFETs conduct briefly as the gate voltage goes from one state to another. This induces a brief spike in power consumption and becomes a serious issue at high frequencies.
Stockholm Water Prize 2006: Professor Asit K. Biswas, The Third World Center for Water Management