where does corrosion occur in a galvanic cell
Galvanic corrosion Dissimilar metals and alloys have different electrode potentials, and when two or more come into contact in an electrolyte, one metal acts as anode and the other as cathode. If the electrolyte contains only metal ions that are not easily reduced (such as Na+, Ca2+, K+, Mg2+, or Zn2+), the cathode reaction is reduction of dissolved H+ to H2 or O2 to OHâˆ’.[1][2][3][4] The electropotential difference between the reactions at the two electrodes is the driving force for an accelerated attack on the anode metal, which dissolves into the electrolyte. This leads to the metal at the anode corroding more quickly than it otherwise would and corrosion at the cathode being inhibited. The presence of an electrolyte and an electrical conducting path between the metals is essential for galvanic corrosion to occur. The electrolyte provides a means for ion migration whereby ions move to prevent charge build-up that would otherwise stop the reaction.
CMOS CMOS circuits are constructed in such a way that all P-type metal-oxide-semiconductor (PMOS) transistors must have either an input from the voltage source or from another PMOS transistor. Similarly, all NMOS transistors must have either an input from ground or from another NMOS transistor. The composition of a PMOS transistor creates low resistance between its source and drain contacts when a low gate voltage is applied and high resistance when a high gate voltage is applied. On the other hand, the composition of an NMOS transistor creates high resistance between source and drain when a low gate voltage is applied and low resistance when a high gate voltage is applied. CMOS accomplishes current reduction by complementing every nMOSFET with a pMOSFET and connecting both gates and both drains together. A high voltage on the gates will cause the nMOSFET to conduct and the pMOSFET not to conduct, while a low voltage on the gates causes the reverse. This arrangement greatly reduces power consumption and heat generation. However, during the switching time, both MOSFETs conduct briefly as the gate voltage goes from one state to another. This induces a brief spike in power consumption and becomes a serious issue at high frequencies.
Pulse Pressure waves generated by the heart in systole move the arterial walls. Forward movement of blood occurs when the boundaries are pliable and compliant. These properties form enough to create a palpable pressure wave.
Rate equation k is the first order rate constant, which has units of 1/s or sâˆ’1.