The perovskite solar cells (PSCs) are still facing the two main challenges of stability and scalability to meet the requirements for their potential commercialization. Therefore, developing a uniform, efficient, high quality and cost-effective electron transport layer (ETL) thin film to achieve a stable PSC is one of the key factors to address these main issues. Magnetron sputtering deposition has been widely used for its high quality thin film deposition as well as its ability to deposit films uniformly on large area at the industrial scale. In this work, we report on the composition, structural, chemical state, and electronic properties of moderate temperature radio frequency (RF) sputtered SnO2. Ar and O2are employed as plasma-sputtering and reactive gases, respectively. We demonstrate the possibility to grow a high quality and stable SnO2thin films with high transport properties by reactive RF magnetron sputtering. Our findings show that PSC devices based on the sputtered SnO2ETL have reached a power conversion efficiency up to 17.10% and an average operational lifetime over 200 h. These uniform sputtered SnO2thin films with improved characteristics are promising for large photovoltaic modules and advanced optoelectronic devices.