The ordered molecular arrangement of crystalline organic semiconductors facilitates high carrier mobility and light emission in organic light-emitting diode (OLED) devices. It has been demonstrated that the weak epitaxy growth (WEG) process is a valuable crystallization route for fabricating crystalline thin-film OLEDs (C-OLEDs). Recently, C-OLEDs based on crystalline thin films of phenanthroimidazole derivatives have exhibited excellent luminescent properties such as high photon output at low driving voltage and high power efficiency. Achieving effective control of organic crystalline thin film growth is crucial for the development of new C-OLEDs. Herein, we report the studies on morphology structure and growth behavior of the phenanthroimidazole derivative WEG thin films. The oriented growth of WEG crystalline thin films is determined by channeling and lattice matching between the inducing layer and active layer. Large-size and continuous WEG crystalline thin films can be obtained by controlling the growth conditions.