This paper reports for the first time a drain-pumped (DP) mixer using Gallium Nitride (GaN) HEMT technology. Specifically, it describes a method aimed to predict the optimum bias conditions for active DP-mixers, leading to high conversion gain (CG) and linearity, along with the efficient use of the local oscillator drive level. A mixer prototype was designed and fabricated according to the discussed design principles; it exhibited a CG and an input third-order intercept point (IIP3) of+10dB and+11dBm, respectively, with a local oscillator power level of 20 dBm at about3.7GHz. In terms of gain and linearity, both figures exceed the documented limitations for the class of mixers considered in this work. To the authors’ best knowledge, this is the first DP mixer operating in the S-band. The prototype was also tested in a radar-like setup operating in the S-band frequency-modulated continuous-wave (FMCW) mode. Measurements carried out in the radar setup resulted in+39.7dB and+34.7dB of IF signal-to-noise-ratio (SNR) for the DP and the resistive mixers, respectively. For comparison purposes, a resistive mixer was designed and fabricated using the same GaN HEMT technology; a detailed comparison between the two topologies is discussed in the paper, thus further highlighting the capability of the DP-mixer for system applications.