Fine control over the growth of materials is required
to precisely
tailor their properties. Spatial atomic layer deposition (SALD) is
a thin-film deposition technique that has recently attracted attention
because it allows producing thin films with a precise number of deposited
layers, while being vacuum-free and much faster than conventional
atomic layer deposition. SALD can be used to grow films in the atomic
layer deposition or chemical vapor deposition regimes, depending on
the extent of precursor intermixing. Precursor intermixing is strongly
influenced by the SALD head design and operating conditions, both
of which affect film growth in complex ways, making it difficult to
predict the growth regime prior to depositions. Here, we used numerical
simulation to systematically study how to rationally design and operate
SALD systems for growing thin films in different growth regimes. We
developed design maps and a predictive equation allowing us to predict
the growth regime as a function of the design parameters and operation
conditions. The predicted growth regimes match those observed in depositions
performed for various conditions. The developed design maps and predictive
equation empower researchers in designing, operating, and optimizing
SALD systems, while offering a convenient way to screen deposition
parameters, prior to experimentation.