Solely light-induced water splitting represents a promising
avenue
for a carbon-free energy future, based on reliable energy sources.
Such processes can be performed using coupled semiconductor materials
(the so-called direct Z-scheme design) that facilitate spatial separation
of (photo)excited electrons and holes, prevent their recombination,
and allow water-splitting half-reactions proceeding at each corresponding
semiconductor side. In this work, we proposed and prepared a specific
structure, based on WO3g–x/CdWO4/CdS coupled semiconductors, created by annealing of a common
WO3/CdS direct Z-scheme. WO3–x/CdWO4/CdS flakes were further combined with a plasmon-active
grating for the creation of the so-called artificial leaf design,
making possible complete utilization of the sunlight spectrum. The
proposed structure enables water splitting with high production of
stoichiometric amounts of oxygen and hydrogen without undesirable
catalyst photodegradation. Several control experiments confirm the
creation of electrons and holes participating in the water splitting
half-reaction in a spatially selective manner.