This study investigated several AlGaN/GaN Schottky Barrier Diodes (SBDs) with different designs to achieve device optimization. First, the optimal electrode spacing, etching depth, and field plate size of the devices were measured using Technology Computer-Aided Design (TCAD) software by Silvaco, and analysis of the electrical behavior of the device was based on the simulation results, and several AlGaN/GaN SBD chips were designed and prepared. The experimental results revealed that the recessed anode can increase the forward current and reduce the on-resistance. An etched depth of 30 nm could obtain a turn-on voltage of 0.75 V and a forward current density of 216 mA/mm. A breakdown voltage of 1043 V and a power figure of merit (FOM) value of 572.6 MW/cm2was obtained with a 3 μm field plate. Experiments and simulations confirmed that the recessed anode and field plate structure could increase the breakdown voltage and forward current and improve the FOM value, resulting in higher electrical performance and a wider range of application scenarios.