Silicon–air batteries (SABs) are attracting considerable attention owing to their high theoretical energy density and superior security. In this study, In and Ga were doped into Si electrodes to optimize the capability of Si-air batteries. Varieties of Si-In/SiO2and Si-Ga/SiO2atomic interfaces were built, and their properties were analyzed using density functional theory (DFT). The adsorption energies of the SiO2passivation layer on In- and Ga-doped silicon electrodes were higher than those on pure Si electrodes. Mulliken population analysis revealed a change in the average number of charge transfers of oxygen atoms at the interface. Furthermore, the local device density of states (LDDOS) of the modified electrodes showed high strength in the interfacial region. Additionally, In and Ga as dopants introduced new energy levels in the Si/SiO2interface according to the projected local density of states (PLDOS), thus reducing the band gap of the SiO2. Moreover, the I-V curves revealed that doping In and Ga into Si electrodes enhanced the current flow of interface devices. These findings provide a mechanistic explanation for improving the practical efficiency of silicon–air batteries through anode doping and provide insight into the design of Si-based anodes in air batteries.