To obtain high conversion efficiency, various carrier-selective contact structures are being applied to the silicon solar cell, and many related studies are being conducted. We conducted research on TiO2to create an electron-selective contact structure that does not require a high-temperature process. Titanium metal was deposited using a thermal evaporator, and an additional oxidation process was conducted to form titanium oxide. The chemical compositions and phases of the titanium dioxide layers were analyzed by X-ray diffraction. The passivation effects of each titanium oxide layer were measured using the quasi-steady-state photoconductance. In this study, the layer properties were analyzed when TiO2had a passivation effect on the silicon surface. The charge and interface defect densities of the layer were analyzed through CV measurements, and the passivation characteristics according to the TiO2phase change were investigated. As a result, by applying optimized TiO2layer thickness and annealing temperature conditions through the experiment for passivation to the cell-like structure, which is the structure before metal and electrode formation, an implied open-circuit voltage (iVoc) of 630 mV and an emitter saturation current density (J0) value of 60.4 fA/cm2were confirmed.Supplementary InformationThe online version contains supplementary material available at 10.1186/s11671-023-03803-x.