This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a triple metal gate (VTG-TFET). We obtained improved switching characteristics for the proposed design because of the improved electrostatic control on the channel and the narrow bandgap source. It shows anIonof 392 μA/μm, anIoffof 8.8 × 10−17A/μm, anIon/Ioffratio of about 4.4 × 1012, and a minimum subthreshold slope of 9.3 mV/dec atVd= 1 V. We also analyze the influence of the gate oxide and metal work functions on the transistor characteristics. A numerical device simulator, calibrated to the experimental data of a vertical InAs–Si gate all around TFET, is used to accurately predict different features of the device. Our simulations demonstrate that the proposed vertical TFET, as a fast-switching and very low power device, is a promising transistor for digital applications.