In this article, we propose a highly sensitive vertically plug-in source drain contacts high Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel field Effect transistor (VPISDC-HSB-BTFET). It can achieve much more sensitive forward current driving ability than the previously proposed High Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET). Silicon body of the proposed VPISDC-HSB-BTFET is etched into a U-shaped structure. By etching both sides of the silicon body to form vertically plug-in source drain contacts, the source and drain electrodes are plugged into a certain height of the vertical parts of both sides of the U-shaped silicon body. Thereafter, the efficient area of the band-to-band tunneling generation region near the source drain contacts is significantly increased, so as to achieve sensitive ON-state current driving ability. Comparing to the mainstream FinFET technology, lower subthreshold swing, lower static power consumption and Higher Ion−Ioffratio can be achieved.