Defect engineering in perovskite thin films has attracted
extensive
attention recently due to the films’ atomic-scale modification,
allowing for remarkable flexibility to design novel nanostructures
for next generation nanodevices. However, the defect-assisted three-dimensional
nanostructures in thin film matrices usually has large misfit strain
and thus causes unstable thin film structures. In contrast, defect-assisted
one- or two-dimensional nanostructures embedded in thin films can
sustain large misfit strains without relaxation, which make them suitable
for defect engineering in perovskite thin films. Here, we reported
the fabrication and characterization of edge-type misfit dislocation-assisted
two-dimensional BiMnOxnanochannels embedded
in SrTiO3/La0.7Sr0.3MnO3/TbScO3perovskite thin films. The nanochannels are epitaxially
grown from the surrounding films without noticeable misfit strain.
Diode-like current rectification was spatially observed at nanochannels
due to the formation of Schottky junctions between BiMnOxnanochannels and conducting La0.7Sr0.3MnO3thin films. Such atomically scaled heterostructures constitute
more flexible ultimate functional units for nanoscale electronic devices.