Outlined here is an innovative method for characterizing a layer of microelongated semiconductor material under excitation. Fractional time derivatives of a heat equation with a rotational field are used to probe the model during photo-excitation processes. Micropolar-thermoelasticity theory, which the model implements, introduces the microelongation scalar function to characterize the processes occurring inside the microelements. When the microelongation parameters are considered following the photo-thermoelasticity theory, the model investigates the interaction scenario between optical-thermo-mechanical waves under the impact of rotation parameters. During electronic and thermoelastic deformation, the key governing equations have been reduced to dimensionless form. Laplace and Fourier's transformations are used to solve this mathematical problem. Isotropic, homogeneous, and linear microelongated semiconductor medium's general solutions to their respective fundamental fields are derived in two dimensions (2D). To get complete solutions, several measurements must be taken at the free surface of the medium. As an example of numerical modeling of the important fields, we will use the silicon (Si) material’s physicomechanical characteristics. Several comparisons were made using different values of relaxation time and rotation parameters, and the results were graphically shown.