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Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

: Schreyvogel, C.; Polyakov, V.; Burk, S.; Fedder, H.; Denisenko, A.; Fávaro de Oliveira, F.; Wunderlich, R.; Meijer, J.; Zürbig, V.; Wrachtrup, J.; Nebel, C.E.

Fulltext urn:nbn:de:0011-n-4235733 (3.5 MByte PDF)
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Created on: 1.12.2016

Beilstein Journal of Nanotechnology 7 (2016), pp.1727-1735
ISSN: 2190-4286
Journal Article, Electronic Publication
Fraunhofer IAF ()
active charge state control; diamond; fast charge state switching; NV centre; two-dimensional Schottky diode

In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a twodimensional Schottky-diode structure from diamond, i.e., by using aluminium as Schottky contact on a hydrogen terminated diamond surface. By changing the applied potential on the Schottky contact, we are able to actively switch single NV centres between all three charge states NV(+), NV(0) and NV(-) on a timescale of 10 to 100 ns, corresponding to a switching frequency of 10-100 MHz. This switching frequency is much higher than the hyperfine interaction frequency between an electron spin (of NV(-)) and a nuclear spin (of (15)N or (3)C for example) of 2.66 kHz. This high-frequency charge state switching with a planar diode structure would open the door for many quantum optical applications such as a quantum computer with single NVs for quantum information processing as well as single (13)C atoms for long-lifetime storage of quantum information. Furthermore, a control of spectral emission properties of single NVs as a single photon emitters - embedded in photonic structures for example - can be realized which would be vital for quantum communication and cryptography.