標題: Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells
作者: Santiago, Svette Reina Merden
Caigas, Septem P.
Lin, Tzu-Neng
Yuan, Chi-Tsu
Shen, Ji-Lin
Chiu, Ching-Hsueh
Kuo, Hao-Chung
Department of Photonics
公開日期: 1-Jan-2018
摘要: We propose a tunnel-injection structure, in which WS2 quantum dots (QDs) act as the injector and InGaN/GaN quantum wells (QWs) act as the light emitters. Such a structure with different barrier thicknesses has been characterized using steady-state and time-resolved photoluminescence (PL). A simultaneous enhancement of the PL intensity and PL decay time for the InGaN QW were observed after transfer of charge carriers from the WS2-QD injector to the InGaN-QW emitter. The tunneling time has been extracted from the time-resolved PL, which increases as the barrier thickness is increased. The dependence of the tunneling time on the barrier thickness is in good agreement with the prediction of the semiclassical Wentzel-Kramers-Brillouin model, confirming the mechanism of the tunnel injection between WS2 QDs and InGaN QWs.
URI: http://dx.doi.org/10.1039/c7ra13108a
ISSN: 2046-2069
DOI: 10.1039/c7ra13108a
Volume: 8
起始頁: 15399
結束頁: 15404
Appears in Collections:Articles