Journal Articles Padilla de la Torre, José Luis Alper, Cem Medina-Bailón, Cristina Gámiz, Francisco Ionescu, Mihai Adrian Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor Applied Physics Letters 0003-6951 10.1063/1.4923467 106 26 2621021-2621024 4 We investigate the effect of pseudo-bilayer configurations at low operating voltages (<0.5V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs arising from semiclassical simulations where the inversion layers for electrons and holes featured very symmetric profiles with similar concentration levels at the ON-state. Pseudo-bilayer layouts are attained by inducing a certain asymmetry between the top and the bottom gates so that even though the hole inversion layer is formed at the bottom of the channel, the top gate voltage remains below the required value to trigger the formation of the inversion layer for electrons. Resulting benefits from this setup are: improved electrostatic control on the channel, enhanced gate-to-gate efficiency and higher Ion levels. Furthermore, pseudo-bilayer configurations alleviate the difficulties derived from confining very high opposite carrier concentrations in very thin structures. band-to-band tunneling; heterogate electron-hole bilayer tunnel field-effect transistor; quantum confinement; inversion layer formation; American Institute of Physics Melville 2015;