Patent Number: 8,871,102

Title: Method and system for fabricating a narrow line structure in a magnetic recording head

Abstract: A method for fabricating a structure in magnetic recording head is described. First and second hard mask layers are provided on the layer(s) for the structure. A BARC layer and photoresist mask having a pattern are provided on the second hard mask layer. The pattern includes a line corresponding to the structure. The pattern is transferred to the BARC layer and the second hard mask layer in a single etch using an etch chemistry. At least the second hard mask layer is trimmed using substantially the same first etch chemistry. A mask including a hard mask line corresponding to the line and less than thirty nanometers wide is thus formed. The pattern of the second hard mask is transferred to the first hard mask layer. The pattern of the first hard mask layer is transferred to the layer(s) such that the structure has substantially the width.

Inventors: Gao; Wei (Fremont, CA)

Assignee: Western Digital (Fremont), LLC

International Classification: B44C 1/22 (20060101); H01L 21/302 (20060101); C03C 15/00 (20060101)
