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Class 438/155 - And additional electrical device on insulating substrate or layer

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making a field effect transistor formed on an
No. of patents: 523
Last issue date: 02/18/2014

NumberTitleIssue Date
6686255Amorphizing ion implant local oxidation of silicon (LOCOS) method for forming an isolation region
Within a local oxidation of silicon (LOCOS) method for forming a silicon oxide isolation region, there is first amorphized areally completely at least a surface sub-layer portion of a silicon layer within an isolation region location within the silicon la...
6682964TFT for LCD device and fabrication method thereof
An object of the present invention is to crystallize and activate the doped amorphous semiconductor layer at the same time. It is also an object to provide the TFT with good electrical connection between the source or drain electrodes and the semiconducto...
6664149TFT-LCD formed with four masking steps
The present invention discloses a structure of a TFT-LCD and its forming process in order to reduce the number of masking steps for manufacturing the tri-layer structure of a TFT-LCD, and further provides a process for forming a TFT-LCD with four masking ...
6664150Active well schemes for SOI technology
A semiconductor device fabricated on a silicon-on-insulator substrate and having an active well scheme as well as methods, including a non-self-aligned and self-aligned, of fabricating such a device are disclosed herein. The semiconductor device includes ...
6660567Method of fabricating an array substrate for an X-ray detector
An array substrate for use in an X-ray sensing device is fabricated using an etching stopper that enables good control of the etching process, and an electrode that prevents damage caused by static electricity generated during a dry-etching step. During f...
6660549Method of manufacturing an active matrix type display circuit
An active matrix circuit using top-gate type thin-film transistors is characterized in that an auxiliary capacitor is formed between a black matrix and an N-type or P-type active layer, and uses, as a dielectric, a silicon nitride layer used as a passivat...
6656776Thin film transistor and fabricating method thereof
A thin film transistor and a fabricating method thereof are adaptive for increasing a capacitance of a storage capacitor. In the method, a gate electrode and a lower electrode of a capacitor are formed at the transistor area and the capacitor area of an i...
6653216Transparent electrode forming apparatus and method of fabricating active matrix substrate
An active matrix substrate includes a line layer formed of an Al-based metal layer and a part of which is exposed through a contact hole formed in an insulating film. In the active matrix substrate, pixel electrodes are formed of an ITO film on the insula...
6642086Method for fabricating thin film transistor array substrate for liquid crystal display
The present invention discloses a TFT array substrate (and method for making the same) having the large storage capacitance for use in a liquid crystal display device. In a four-mask process, the conventional storage capacitor of the TFT array substrate i...
6642071Process for manufacturing an active matrix LCD array
A TFT array substrate and a process for manufacturing the same are provided. A plurality of TFTs in array are formed on a substrate. A gate insulating layer and a protection layer are sequentially formed to cover a pixel region of the substrate. A plurali...
6642088Silicon-controlled rectifier structures on silicon-on insulator with shallow trench isolation
A method to form a SCR device in the manufacture of an integrated circuit device is achieved. The method comprises providing a SOI substrate comprising a silicon layer overlying a buried oxide layer. The silicon layer further comprises a first well of a f...
6638781Semiconductor device and method of fabricating the same
There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and i...
6638844Method of reducing substrate coupling/noise for radio frequency CMOS (RFCMOS) components in semiconductor technology by backside trench and fill
A method of reducing substrate coupling and noise for one or more RFCMOS components comprising the following steps. A substrate having a frontside and a backside is provided. One or more RFCMOS components are formed over the substrate. One or more isolati...
6627485Electro-optical device, method for fabricating the same, and electronic apparatus
In a substrate, a portion for forming wiring extending to a connection terminal is provided with a recess. The connection terminal and the wiring are covered by an interlayer insulating film, and an opening is provided in a portion corresponding to the co...
6627484Method of forming a buried interconnect on a semiconductor on insulator wafer and a device including a buried interconnect
A buried interconnect can be incorporated into the starting semiconductor on insulator wafer during the early stages of the circuit fabrication process flow for use with semiconductor devices. The buried interconnect provides an additional interconnect la...
6624012Semiconductor device and method of manufacturing thereof
To provide a liquid crystal display device having high quality display with a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in...
6620663Self-aligned copper plating/CMP process for RF lateral MOS device
A method of fabricating an RF lateral MOS device, comprising the following steps. A substrate having a gate oxide layer formed thereover is provided. A first layer of polysilicon is formed over the gate oxide layer. A second layer of material is formed ov...
6620659Merged logic and memory combining thin film and bulk Si transistors
The present invention describes the use of two semiconductor layers, a thin film (TF) layer and a bulk Si wafer layer, to make high density and high speed merged logic and memory IC chips. The memory cells use three-dimensional (3D) SRAM structures. Two k...
6613615Pair of FETs including a shared SOI body contact and the method of forming the FETs
A method of forming a silicon on insulator (SOI) body contact at a pair of field effect transistors (FETs), a sense amplifier including a balanced pair of such FETs and a RAM including the sense amplifiers. A pair of gates are formed on a SOI silicon surf...
6605494Method of fabricating thin film transistor
In the method of fabricating a TFT in accordance with the present invention, a first semiconductor layer 37 to be used as a channel is formed on a portion of an insulating layer 35 in correspondence with an underlying gate electrode 33. A second semicondu...
6602743Method of manufacturing a flat panel display
A method of manufacturing a flat display is disclosed. First, a first substrate having a first thickness is provided. The first substrate includes a first display area and a first pad area, and a pad electrode is formed in the first pad area and a passiva...
6599813Method of forming shallow trench isolation for thin silicon-on-insulator substrates
A method is disclosed for forming shallow trench isolation (STI) on a thin silicon-on-insulator (SOI) substrate. The method comprises depositing a first polysilicon layer; depositing a polish stop layer on the first polysilicon layer; forming a plurality ...
6599787Method of manufacturing an active matrix substrate
An active matrix substrate includes a row and column array of active elements. Each element is associated with a TFT having a gate electrode connected to a corresponding row conductor and source and drain (electrodes connected to corresponding column cond...
6599767Method of avoiding bonding pad oxidation in manufacturing an OLED device
A method is disclosed for avoiding oxidation of a bonding pad served as an electrical connection to devices mounted on a transparent insulating substrate of a thin-film transistor applied to an organic light emitting diode (OLED). Firstly, the bonding pad...
6599786Array substrate for liquid crystal display and the fabrication method of the same
A method of manufacturing an LCD array substrate and LCD made by that method are disclosed. A plurality of gate lines, gate electrodes and gate extension lines are formed by depositing and patterning a first metallic material using a first mask. A first i...
6599791Semiconductor integrated circuit
In a monolithic active matrix circuit that uses offset-gate TFTs in which the gate electrode is offset from the source and drain regions or TFTs whose gate insulating film is formed by vapor deposition, not only an active matrix circuit but also a drive c...
6593211Semiconductor substrate and method for producing the same
There are disclosed a semiconductor substrate having a non-porous monocrystalline layer with reduced crystal defects on a porous silicon layer and a method of forming the substrate. The forming method comprises a heat treatment step of heat-treating a por...
6589826Thin film transistor and a method of forming the same
A method of forming a thin film transistor, includes: forming an active region on a first insulating layer, the active region having a channel region, at least one sub-channel region, and first regions disposed between the channel region and each sub-chan...
An electrostatic discharge (ESD) protection device for a silicon-on-insulator (SOI) integrated circuit having a silicon substrate with a buried oxide layer disposed thereon and an active layer disposed on the buried oxide layer having active regions defin...
6586286Method for fabricating thin film transistor array substrate for liquid crystal display
A thin film transistor substrate for a liquid crystal display includes an insulating substrate, and a gate line assembly formed on the substrate. The gate line assembly has a double-layered structure with a lower layer exhibiting good contact characterist...
6576504Method of fabricating a liquid crystal display device having an improved storage capacitance
In a liquid crystal display device, an improved storage capacitance that uses a pair of transparent conductive films for electrodes is provided. On a flattening film made of a resin, a first transparent conductive film and an insulating film for capacitan...
6573563SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs
A silicon-on-insulator (SOI) integrated, circuit is provided. A plurality of transistor active regions and at least one body contact active region are formed on an SOI substrate. A semiconductor residue layer, which is thinner than the transistor active r...
6566154Method for manufacturing liquid crystal display device
A plastic substrate is employed as a counter substrate that constitutes one of two substrates of a liquid crystal panel. To form such a liquid crystal panel, the counter substrate consisting of the plastic substrate is manufactured in a situation where a ...
6562668Method of fabricating thin film transistor using buffer layer and the thin film transistor
In the method of fabricating a thin film transistor, a first aluminum layer, which is later oxidized, or aluminum nitride layer is formed on a glass substrate. A metal gate is formed on the aluminum layer or the aluminum nitride layer. Oxidation of the al...
6563173Silicon-on-insulator chip having an isolation barrier for reliability
An SOI chip having an isolation barrier. The SOI chip includes a substrate, an oxide layer deposited on the substrate, and a silicon layer deposited on the oxide layer. A gate is deposited above the silicon layer. A first metal contact is deposited above ...
6559477Flat panel display device and method for manufacturing the same
A flat panel display device comprising a thin film semiconductor switching element formed on a surface of a substrate, a display electrode connected with the switching element, a semiconductor layer for auxiliary capacity which is electrically connected w...
6558994Dual silicon-on-insulator device wafer die
A silicon-on-insulator semiconductor device and manufacturing method therefor is provided in which a single wafer die contains a transistor over an insulator layer to form a fully depleted silicon-on-insulator device and a transistor formed in a semicondu...
6555409Method for fabricating a thin film transistor array substrate for liquid crystal display
In a method of fabricating a thin film transistor array substrate, an aluminum-based conductive layer is deposited onto an insulating substrate, and patterned to form a gate line assembly. The gate line assembly includes gate lines, gate electrodes, and g...
6548831Liquid crystal display panel having a gate line with at least one opening
A liquid crystal display panel includes a gate line and a signal line intersecting the gate line at an intersection portion where the gate line and the signal line intersect each other. The gate line includes at least two conductive portions and at least ...
6541793Thin-film transistor and semiconductor device using thin-film transistors
In those thin-film transistors (TFTs) employing as its active layer a silicon film crystallized using a metal element, the objective is to eliminate bad affection of such metal element to the TFT characteristics. To this end, in a TFT having as its active...
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