標題: Ab Initio Chemical Kinetic Study for Reactions of H Atoms with SiH4 and Si2H6: Comparison of Theory and Experiment
作者: Wu, S. Y.
Raghunath, P.
Wu, J. S.
Lin, M. C.
Department of Mechanical Engineering
Institute of Molecular science
公開日期: 14-Jan-2010
摘要: The reactions of hydrogen atom with silane and disilane are relevant to the understanding of catalytic chemical vapor deposition (Cat-CVD) and plasma enhanced chemical vapor deposition (PECVD) processes. In the present study, these reactions have been investigated by means of A initio molecular-orbital and transition-state theory calculations. In both reactions, the most favorable pathway was found to be the H abstraction leading to the formation of SiH3 and Si2H5 products, with 5.1 and 4.0 kca/mol barriers, respectively. For H + Si2H6, another possible reaction pathway giving SiH3 + SiH4 may take place with two different mechanisms with 4.3 and 6.7 kcal/mol barriers for H-atom attacking side-way and end-on, respectively. To validate the calculated energies of the reactions, two isodesmic reactions, SiH3+CH4 -> SiH4+CH3 and Si2H5+C2H6 -> Si2H6+C2H5 were employed; the predicted heats of the formation for SiH3 (49.0 kcal/mol) and Si2H5 (58.6 kcal/mol) were found to agree well with the experimental data. Finally, rate constants for both H-abstraction reactions predicted in the range of 290-2500 K agree well with experimental data. The result also shows that H+Si2H6 producing H-2+Si2H5 is more favorable than SiH3+SiH4.
URI: http://dx.doi.org/10.1021/jp908222g
ISSN: 1089-5639
DOI: 10.1021/jp908222g
Volume: 114
起始頁: 633
結束頁: 639
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