Search for dissertations about: "epitaxy"

Showing result 1 - 5 of 142 swedish dissertations containing the word epitaxy.

  1. 1. Epitaxy of GaAs-based long-wavelength vertical cavity lasers

    University dissertation from Kista : Mikroelektronik och informationsteknik

    Author : Carl Asplund; KTH.; [2003]
    Keywords : gainnas; ingaas; quantum wells; movpe; mocvd; vertical cavity laser; bcsel; long-wavelength; epitaxy; xrd; dbr;

    Abstract : Vertical cavity lasers (VCLs) are of great interest aslow-cost, high-performance light sources for fiber-opticcommunication systems. They have a number of advantages overconventional edge-emitting lasers, including low powerconsumption, efficient fiber coupling and wafer scalemanufacturing/testing. READ MORE

  2. 2. CVD solutions for new directions in SiC and GaN epitaxy

    University dissertation from Linköping : Linköping University Electronic Press

    Author : Xun Li; Linköpings universitet.; Linköpings universitet.; [2015]

    Abstract : This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. READ MORE

  3. 3. Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition

    University dissertation from Kista : Mikroelektronik och informationsteknik

    Author : Julius Hållstedt; KTH.; [2004]
    Keywords : Silicon germanium carbon SiGeC ; Epitaxy; Chemical vapor deposition CVD ; Loading effect; High resolution x-ray diffraction HRXRD ; Hall measurements; Atomic force microscopy AFM .;

    Abstract : Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potential for increased thermal budget duringprocessing. READ MORE

  4. 4. Atomic layer epitaxy of copper

    University dissertation from Uppsala : Acta Universitatis Upsaliensis

    Author : Per Mårtensson; Uppsala universitet.; [1999]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Atomic Layer Epitaxy; ALE; copper; ab initio calculations; DFT; CuCl; Cu thd 2; selectivity; Kemi; NATURAL SCIENCES Chemistry; NATURVETENSKAP Kemi; Inorganic Chemistry; oorganisk kemi;

    Abstract : The high electric and thermal conductivity of copper has made it to a prime candidate as interconnect material in future integrated circuits. In this thesis, Atomic Layer Epitaxy has been used to deposit thin copper films on a variety of substrates, using both CuCl and Cu(II)2,2,6,6-tetramethyl-3,5-heptanedionate, Cu(thd)2, as precursors and hydrogen as reducing agent. READ MORE

  5. 5. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors

    University dissertation from Kista : Mikroelektronik och informationsteknik

    Author : Johan Pejnefors; KTH.; [2001]
    Keywords : chemical vapor deposition CVD ; bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; epitaxy; poly-Si emitter; in situ doping; non-selective epitaxy NSEG ; loading effect; emissivity effect;

    Abstract : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. READ MORE