10.1016/j.susc.2006.04.027 Georgios Katsaros Georgios Katsaros Rastelli, Armando Armando Rastelli Stoffel, Mathieu Mathieu Stoffel Isella, Giovanni Giovanni Isella Von Känel, Hans Hans Von Känel Bittner, Alexander M Alexander Bittner Tersoff, Jerry Jerry Tersoff Denker, Ulrich Ulrich Denker Schmidt, Oliver G Oliver Schmidt Costantini, Giovanni Giovanni Costantini Kern, Klaus Klaus Kern Investigating the lateral motion of SiGe islands by selective chemical etching Elsevier 2006 2018-12-11T11:53:47Z 2019-04-26T07:22:04Z journal_article https://research-explorer.app.ist.ac.at/record/1745 https://research-explorer.app.ist.ac.at/record/1745.json SiGe islands grown by deposition of 10 monolayers of Ge on Si(0 0 1) at 740 °C were investigated by using a combination of selective wet chemical etching and atomic force microscopy. The used etchant, a solution consisting of ammonium hydroxide and hydrogen peroxide, shows a high selectivity of Ge over SixGe1-x and is characterized by relatively slow etching rates for Si-rich alloys. By performing successive etching experiments on the same sample area, we are able to gain a deeper insight into the lateral displacement the islands undergo during post growth annealing.