Electrical properties of ScN(111) layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy
We investigate the electrical properties of nominally undoped, 10-40-nm-thick ScN(111) layers grown on nearly lattice-matched GaN:Fe/Al$_2$O$_3$(0001) templates by plasma-assisted molecular beam epitaxy. Hall-effect measurements yield electron concentrations of 0.7-3.1$\times 10^{19}$ $\text{cm}^{-3}$ and mobilities of 50-160 cm$^{2}$V$^{-1}$s$^{-1}$ at room temperature. The temperature-dependent (4-360 K) conductivity exhibits two distinct regimes, suggesting two-band conduction in an impurity band and the conduction band. Assuming a single shallow donor in ScN and employing the standard two-band conduction model, we extract the carrier density and mobility in these bands. The results reveal nondegenerate characteristics for the 40-nm-thick layer, while the thinner layers are weakly degenerate. For the nondegenerate layer, the donor ionization energy amounts to approximately 12 meV. The electron mobility of the layers is limited by ionized impurity scattering and phonon scattering at low and high temperatures, respectively. Fits with an expression for optical phonon scattering developed for weakly degenerate semiconductors return an effective phonon energy of $(61 \pm 5)$ meV, in between the energies of the longitudinal optical ($\approx 84$ meV) and transverse optical ($\approx 45$ meV) phonon modes in ScN.